KR101668338B1 - 스펙트럼 퓨리티 필터 및 리소그래피 장치 - Google Patents

스펙트럼 퓨리티 필터 및 리소그래피 장치 Download PDF

Info

Publication number
KR101668338B1
KR101668338B1 KR1020117007168A KR20117007168A KR101668338B1 KR 101668338 B1 KR101668338 B1 KR 101668338B1 KR 1020117007168 A KR1020117007168 A KR 1020117007168A KR 20117007168 A KR20117007168 A KR 20117007168A KR 101668338 B1 KR101668338 B1 KR 101668338B1
Authority
KR
South Korea
Prior art keywords
radiation
spectral purity
substrate
layer
purity filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020117007168A
Other languages
English (en)
Korean (ko)
Other versions
KR20110083609A (ko
Inventor
마르텐 마리누스 요한네스 빌헬무스 반 헤르펜
보우터 안톤 소어
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20110083609A publication Critical patent/KR20110083609A/ko
Application granted granted Critical
Publication of KR101668338B1 publication Critical patent/KR101668338B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Epidemiology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Optical Filters (AREA)
KR1020117007168A 2008-08-28 2009-07-29 스펙트럼 퓨리티 필터 및 리소그래피 장치 Active KR101668338B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13633108P 2008-08-28 2008-08-28
US61/136,331 2008-08-28
US19320208P 2008-11-05 2008-11-05
US61/193,202 2008-11-05
PCT/EP2009/005487 WO2010022839A2 (en) 2008-08-28 2009-07-29 Spectral purity filter and lithographic apparatus

Publications (2)

Publication Number Publication Date
KR20110083609A KR20110083609A (ko) 2011-07-20
KR101668338B1 true KR101668338B1 (ko) 2016-10-21

Family

ID=41722000

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117007168A Active KR101668338B1 (ko) 2008-08-28 2009-07-29 스펙트럼 퓨리티 필터 및 리소그래피 장치

Country Status (6)

Country Link
US (1) US8665420B2 (https=)
JP (1) JP5439485B2 (https=)
KR (1) KR101668338B1 (https=)
CN (1) CN102132214B (https=)
NL (1) NL2003299A (https=)
WO (1) WO2010022839A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10690823B2 (en) 2007-08-12 2020-06-23 Toyota Motor Corporation Omnidirectional structural color made from metal and dielectric layers
US10870740B2 (en) 2007-08-12 2020-12-22 Toyota Jidosha Kabushiki Kaisha Non-color shifting multilayer structures and protective coatings thereon
US10788608B2 (en) 2007-08-12 2020-09-29 Toyota Jidosha Kabushiki Kaisha Non-color shifting multilayer structures
EP2550563A1 (en) 2010-03-24 2013-01-30 ASML Netherlands B.V. Lithographic apparatus and spectral purity filter
DE102012202057B4 (de) * 2012-02-10 2021-07-08 Carl Zeiss Smt Gmbh Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
CN102798902A (zh) * 2012-07-23 2012-11-28 中国科学院长春光学精密机械与物理研究所 一种提高极紫外光谱纯度的新型多层膜
KR101812857B1 (ko) * 2012-08-28 2017-12-27 가부시키가이샤 니콘 기판 지지 장치, 및 노광 장치
DE102014204171A1 (de) * 2014-03-06 2015-09-24 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102014204660A1 (de) * 2014-03-13 2015-09-17 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE112015001639B4 (de) 2014-04-01 2023-12-14 Toyota Jidosha Kabushiki Kaisha Nicht-farbverschiebende mehrschichtige strukturen
CN104020519A (zh) * 2014-04-28 2014-09-03 中国科学院上海光学精密机械研究所 紫外薄膜滤光片
CN104297820A (zh) * 2014-09-26 2015-01-21 中国科学院长春光学精密机械与物理研究所 一种提高了极紫外光谱纯度及抗氧化性的多层膜
CN104459835B (zh) * 2014-12-24 2016-06-29 南京波长光电科技股份有限公司 一种红外玻璃gasir1增透膜及其制备方法
DE102016110192A1 (de) * 2015-07-07 2017-01-12 Toyota Motor Engineering & Manufacturing North America, Inc. Omnidirektionale rote strukturelle Farbe hoher Chroma mit Halbleiterabsorberschicht
DE102015213253A1 (de) 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
WO2020083578A1 (en) * 2018-10-22 2020-04-30 Asml Netherlands B.V. Radiation filter for a radiation sensor
TW202119136A (zh) * 2019-10-18 2021-05-16 美商應用材料股份有限公司 多層反射器及其製造和圖案化之方法
DE102022205302A1 (de) * 2022-05-25 2023-11-30 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US12442104B2 (en) 2023-04-20 2025-10-14 Applied Materials, Inc. Nanocrystalline diamond with amorphous interfacial layer

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145094A1 (en) 2004-12-30 2006-07-06 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
EP1717609A1 (en) 2005-04-27 2006-11-02 ASML Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
US20070259275A1 (en) 2006-05-05 2007-11-08 Asml Netherlands B.V. Anti-reflection coating for an EUV mask

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5086443A (en) * 1990-08-03 1992-02-04 The United States Of America As Represented By The United States Department Of Energy Background-reducing x-ray multilayer mirror
JPH06174897A (ja) 1992-12-10 1994-06-24 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線ミラーおよび多層膜ｘ線光学系
US5962854A (en) * 1996-06-12 1999-10-05 Ishizuka Electronics Corporation Infrared sensor and infrared detector
US7515336B2 (en) * 2001-12-21 2009-04-07 Bose Corporation Selective reflecting
JP4458330B2 (ja) * 2003-12-26 2010-04-28 キヤノン株式会社 光源ユニットの多層膜ミラーを交換する方法
US7262412B2 (en) * 2004-12-10 2007-08-28 L-3 Communications Corporation Optically blocked reference pixels for focal plane arrays
JP2006173490A (ja) * 2004-12-17 2006-06-29 Nikon Corp 光学素子及びこれを用いた投影露光装置
JP4591686B2 (ja) * 2005-02-03 2010-12-01 株式会社ニコン 多層膜反射鏡
US7372623B2 (en) * 2005-03-29 2008-05-13 Asml Netherlands B.V. Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
EP1744187A1 (en) * 2005-07-15 2007-01-17 Vrije Universiteit Brussel Folded radial brewster polariser
JP2007088237A (ja) * 2005-09-22 2007-04-05 Nikon Corp 多層膜反射鏡及びｅｕｖ露光装置
NL1036469A1 (nl) * 2008-02-27 2009-08-31 Asml Netherlands Bv Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby.
JP2010272677A (ja) * 2009-05-21 2010-12-02 Nikon Corp 光学素子、露光装置及びデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145094A1 (en) 2004-12-30 2006-07-06 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
EP1717609A1 (en) 2005-04-27 2006-11-02 ASML Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
US20070259275A1 (en) 2006-05-05 2007-11-08 Asml Netherlands B.V. Anti-reflection coating for an EUV mask

Also Published As

Publication number Publication date
CN102132214A (zh) 2011-07-20
US8665420B2 (en) 2014-03-04
CN102132214B (zh) 2014-09-24
KR20110083609A (ko) 2011-07-20
JP2012501073A (ja) 2012-01-12
WO2010022839A2 (en) 2010-03-04
NL2003299A (en) 2010-03-11
JP5439485B2 (ja) 2014-03-12
US20110149262A1 (en) 2011-06-23
WO2010022839A3 (en) 2010-06-03

Similar Documents

Publication Publication Date Title
KR101668338B1 (ko) 스펙트럼 퓨리티 필터 및 리소그래피 장치
EP2283388B1 (en) Radiation system, radiation collector, radiation beam conditioning system, spectral purity filter for a radiation system and method of forming a spectral purity filter
JP5732392B2 (ja) 放射源およびリソグラフィ装置
US8102511B2 (en) Lithographic apparatus with enhanced spectral purity, device manufacturing method and device manufactured thereby
EP2310912B1 (en) Radiation source, lithographic apparatus, and device manufacturing method
US7196343B2 (en) Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
EP2462593A1 (en) Spectral filter, lithographic apparatus including such a spectral filter, device manufacturing method, and device manufactured thereby
NL2003430A (en) Collector assembly, radiation source, lithographic apparatus, and device manufacturing method.
CN102105837B (zh) 反射镜、光刻设备以及器件制造方法
US20120182537A1 (en) Spectral purity filter, lithographic apparatus, and device manufacturing method
TWI585542B (zh) 微影裝置、感測器及方法
US20050279951A1 (en) Grazing incidence mirror, lithographic apparatus including a grazing incidence mirror, method for providing a grazing incidence mirror, method for enhancing EUV reflection of a grazing incidence mirror, device manufacturing method and device manufactured thereby
WO2011072905A1 (en) Lithographic apparatus and device manufacturing method
NL2005763A (en) Lithographic apparatus.

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000