CN102132214B - 光谱纯度滤光片和光刻设备 - Google Patents

光谱纯度滤光片和光刻设备 Download PDF

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Publication number
CN102132214B
CN102132214B CN200980133185.0A CN200980133185A CN102132214B CN 102132214 B CN102132214 B CN 102132214B CN 200980133185 A CN200980133185 A CN 200980133185A CN 102132214 B CN102132214 B CN 102132214B
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CN
China
Prior art keywords
radiation
spectral purity
purity filter
substrate
antireflecting coating
Prior art date
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CN200980133185.0A
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English (en)
Chinese (zh)
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CN102132214A (zh
Inventor
M·M·J·W·范赫彭
W·A·索尔
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ASML Netherlands BV
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ASML Netherlands BV
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Publication of CN102132214A publication Critical patent/CN102132214A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Epidemiology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Optical Filters (AREA)
CN200980133185.0A 2008-08-28 2009-07-29 光谱纯度滤光片和光刻设备 Active CN102132214B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US13633108P 2008-08-28 2008-08-28
US61/136,331 2008-08-28
US19320208P 2008-11-05 2008-11-05
US61/193,202 2008-11-05
PCT/EP2009/005487 WO2010022839A2 (en) 2008-08-28 2009-07-29 Spectral purity filter and lithographic apparatus

Publications (2)

Publication Number Publication Date
CN102132214A CN102132214A (zh) 2011-07-20
CN102132214B true CN102132214B (zh) 2014-09-24

Family

ID=41722000

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980133185.0A Active CN102132214B (zh) 2008-08-28 2009-07-29 光谱纯度滤光片和光刻设备

Country Status (6)

Country Link
US (1) US8665420B2 (https=)
JP (1) JP5439485B2 (https=)
KR (1) KR101668338B1 (https=)
CN (1) CN102132214B (https=)
NL (1) NL2003299A (https=)
WO (1) WO2010022839A2 (https=)

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* Cited by examiner, † Cited by third party
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US10690823B2 (en) 2007-08-12 2020-06-23 Toyota Motor Corporation Omnidirectional structural color made from metal and dielectric layers
US10870740B2 (en) 2007-08-12 2020-12-22 Toyota Jidosha Kabushiki Kaisha Non-color shifting multilayer structures and protective coatings thereon
US10788608B2 (en) 2007-08-12 2020-09-29 Toyota Jidosha Kabushiki Kaisha Non-color shifting multilayer structures
EP2550563A1 (en) 2010-03-24 2013-01-30 ASML Netherlands B.V. Lithographic apparatus and spectral purity filter
DE102012202057B4 (de) * 2012-02-10 2021-07-08 Carl Zeiss Smt Gmbh Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
CN102798902A (zh) * 2012-07-23 2012-11-28 中国科学院长春光学精密机械与物理研究所 一种提高极紫外光谱纯度的新型多层膜
KR101812857B1 (ko) * 2012-08-28 2017-12-27 가부시키가이샤 니콘 기판 지지 장치, 및 노광 장치
DE102014204171A1 (de) * 2014-03-06 2015-09-24 Carl Zeiss Smt Gmbh Optisches Element und optische Anordnung damit
DE102014204660A1 (de) * 2014-03-13 2015-09-17 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE112015001639B4 (de) 2014-04-01 2023-12-14 Toyota Jidosha Kabushiki Kaisha Nicht-farbverschiebende mehrschichtige strukturen
CN104020519A (zh) * 2014-04-28 2014-09-03 中国科学院上海光学精密机械研究所 紫外薄膜滤光片
CN104297820A (zh) * 2014-09-26 2015-01-21 中国科学院长春光学精密机械与物理研究所 一种提高了极紫外光谱纯度及抗氧化性的多层膜
CN104459835B (zh) * 2014-12-24 2016-06-29 南京波长光电科技股份有限公司 一种红外玻璃gasir1增透膜及其制备方法
DE102016110192A1 (de) * 2015-07-07 2017-01-12 Toyota Motor Engineering & Manufacturing North America, Inc. Omnidirektionale rote strukturelle Farbe hoher Chroma mit Halbleiterabsorberschicht
DE102015213253A1 (de) 2015-07-15 2017-01-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
WO2020083578A1 (en) * 2018-10-22 2020-04-30 Asml Netherlands B.V. Radiation filter for a radiation sensor
TW202119136A (zh) * 2019-10-18 2021-05-16 美商應用材料股份有限公司 多層反射器及其製造和圖案化之方法
DE102022205302A1 (de) * 2022-05-25 2023-11-30 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US12442104B2 (en) 2023-04-20 2025-10-14 Applied Materials, Inc. Nanocrystalline diamond with amorphous interfacial layer

Citations (4)

* Cited by examiner, † Cited by third party
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US20040233524A1 (en) * 2001-12-21 2004-11-25 Barret Lippey Selective reflecting
US20060145094A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
CN1854771A (zh) * 2005-04-27 2006-11-01 Asml荷兰有限公司 多层反射镜光谱纯滤光片、光刻设备以及装置制造方法
CN101960338A (zh) * 2008-02-27 2011-01-26 Asml荷兰有限公司 光学元件、包括该光学元件的光刻设备、器件制造方法以及所制造的器件

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JPH06174897A (ja) 1992-12-10 1994-06-24 Nippon Telegr & Teleph Corp <Ntt> 多層膜ｘ線ミラーおよび多層膜ｘ線光学系
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US7372623B2 (en) * 2005-03-29 2008-05-13 Asml Netherlands B.V. Multi-layer spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
EP1744187A1 (en) * 2005-07-15 2007-01-17 Vrije Universiteit Brussel Folded radial brewster polariser
JP2007088237A (ja) * 2005-09-22 2007-04-05 Nikon Corp 多層膜反射鏡及びｅｕｖ露光装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040233524A1 (en) * 2001-12-21 2004-11-25 Barret Lippey Selective reflecting
US20060145094A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Optical element, lithographic apparatus including such an optical element, device manufacturing method, and device manufactured thereby
CN1854771A (zh) * 2005-04-27 2006-11-01 Asml荷兰有限公司 多层反射镜光谱纯滤光片、光刻设备以及装置制造方法
CN101960338A (zh) * 2008-02-27 2011-01-26 Asml荷兰有限公司 光学元件、包括该光学元件的光刻设备、器件制造方法以及所制造的器件

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Also Published As

Publication number Publication date
CN102132214A (zh) 2011-07-20
US8665420B2 (en) 2014-03-04
KR20110083609A (ko) 2011-07-20
JP2012501073A (ja) 2012-01-12
WO2010022839A2 (en) 2010-03-04
NL2003299A (en) 2010-03-11
JP5439485B2 (ja) 2014-03-12
US20110149262A1 (en) 2011-06-23
KR101668338B1 (ko) 2016-10-21
WO2010022839A3 (en) 2010-06-03

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