KR101652867B1 - In-plane switching mode liquid crystal display device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field type liquid crystal display, and more particularly to a transverse electric field type liquid crystal display capable of preventing a viewing angle cross (VAC) defect.

A feature of the present invention is to form an inorganic black matrix on the first substrate so as to cover the region between the gate wiring and the thin film transistor, and between the data wiring and the neighboring common electrode.

This prevents leakage of light in a region between each wiring and the common electrode. Thus, by preventing light leakage, the image quality of the liquid crystal display device can be further improved.

A transverse electric field liquid crystal display device, a viewing angle cross (VAC) defect, an inorganic black matrix

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a liquid crystal display (LCD)

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transverse electric field type liquid crystal display, and more particularly to a transverse electric field type liquid crystal display capable of preventing a viewing angle cross (VAC) defect.

A liquid crystal display device (LCD), which is advantageous for moving picture display and has a large contrast ratio and is actively used in TVs and monitors, exhibits optical anisotropy and polarization properties of a liquid crystal, And the like.

Such a liquid crystal display device has a liquid crystal panel in which a liquid crystal panel is interposed between two adjacent substrates through a liquid crystal layer as an essential component and changes the alignment direction of the liquid crystal molecules in an electric field in the liquid crystal panel to realize a difference in transmittance do.

In recent years, an active matrix liquid crystal display device which drives a liquid crystal by an electric field formed by an up-down electric field has been widely used because of its excellent resolution and moving image realization capability. However, liquid crystal driving by an electric field in an up-

Accordingly, various methods have been proposed in order to overcome the disadvantage that the viewing angle is narrow. Among them, a liquid crystal driving method by a transverse electric field is attracting attention.

1 is a cross-sectional view schematically showing a general transverse electric field type liquid crystal display device.

As shown in the figure, the transverse electric field type liquid crystal display device 10 includes a first substrate 1 as an array substrate and a second substrate 2 as a color filter substrate, 1 and 2, the liquid crystal layer 3 is interposed.

At this time, on the first substrate 1, a plurality of gate wirings (not shown) configured to be spaced apart from each other by a predetermined distance and common wirings (not shown) configured to be parallel to gate wirings (not shown) And a data line 4 crossing the two wirings (not shown, not shown), and in particular crossing the gate wiring (not shown) to define the pixel region P are formed.

At this time, the thin film transistor Tr is formed in the switching region TrA which is the intersection of the gate wiring (not shown) and the data wiring 4 of each pixel region P and the display region AA The common electrode 12 and the pixel electrode 14 are formed.

Here, the thin film transistor Tr includes a gate electrode 11, a gate insulating film 13, a semiconductor layer 15, and source and drain electrodes 17 and 19.

A protective layer 16 is formed on the entire surface of the first substrate 1 including the thin film transistor Tr and the pixel electrode 14 is electrically connected to the drain electrode 19 of the thin film transistor Tr do.

A common electrode 12 is formed at one side of the pixel electrode 14 in the display area AA at a predetermined interval to form a transverse electric field.

Although the pixel electrode 14 and the common electrode 12 are not shown in the drawing, a plurality of the pixel electrode 14 and the common electrode 12 are alternately arranged in a staggered arrangement.

An organic black matrix 21 having openings corresponding to the pixel regions P is formed on the second substrate 2 facing the first substrate 1. The organic black matrices 21 corresponding to the openings are sequentially and repeatedly arranged. A color filter layer 23 including a green color filter and a blue color filter is formed.

An overcoat layer 25 is formed on the organic black matrix 21 and the color filter layer 23.

As described above, in the transverse electric field type liquid crystal display device, the common electrode 12 and the pixel electrode 14 are formed on the same substrate 1, and a horizontal electric field is generated between the two electrodes 12 and 14, And 2, the viewing angle of the liquid crystal display device can be widened.

On the other hand, in such a transverse electric-field liquid crystal display device 10, an anomalous distribution of an electric field is generated in the step formed by each electrode and wiring, so that the liquid crystal molecules do not normally operate, .

Therefore, the organic black matrix 21 is formed in such a manner that the light can not pass through the second substrate 2 in correspondence to the portions where the liquid crystal that operates irregularly, especially the gate wiring (not shown) and the data wiring 4 have.

Particularly, corresponding to the data lines 4, the organic black matrix 21 is formed so as to sufficiently cover the data lines 4 and the common electrodes 12 on both sides thereof.

At this time, the organic black matrix 21 formed corresponding to the data line 4 has a viewing angle (VAC) at which a light leakage is observed according to a viewing angle of the observer through a region separated between the data line 4 and the common electrode 12 the viewing angle cross margin (D) is further increased in order to prevent a cross defect of the liquid crystal display device 10. This causes a problem of eroding the aperture ratio of the liquid crystal display device 10.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a transverse electric field type liquid crystal display device in which a viewing angle cross (VAC) defect of a transverse electric field type liquid crystal display device is prevented while an aperture ratio is improved.

According to an aspect of the present invention, there is provided a plasma display panel comprising a first substrate and a second substrate; A gate wiring formed in a first direction on the first substrate facing the second substrate and a common wiring which is spaced apart from the gate wiring and a common electrode which is branched from the common wiring and is located at an outermost periphery of each pixel region, and; A data line formed in a second direction intersecting the gate line and the common line and defining a pixel region; A thin film transistor formed in a crossing region of the gate wiring and the data wiring; A pixel electrode connected to the thin film transistor and generating a horizontal electric field with the common electrode in the pixel region; A black matrix formed to cover a gap region between the gate line and the thin film transistor, and between the data line and the data line and a common electrode located at an outermost edge of each pixel region; And a liquid crystal layer interposed between the first and second substrates.

At this time, the black matrix is an inorganic material, and a protective layer is disposed between the data line and the black matrix.

The protective layer may include a data line contact hole exposing the data line, the black matrix may contact the data line through the data line contact hole, the thin film transistor may include a gate electrode connected to the gate line, A source electrode and a drain electrode connected to the data line, and an active layer.

Here, a passivation layer is disposed between the thin film transistor and the black matrix, and the pixel electrode is in contact with the drain electrode through the black matrix and the drain contact hole formed in the passivation layer, Green, and blue color filter layers are formed on the second substrate.

In addition, the color filter layers are overlapped with each other in correspondence with the black matrix, and the color filter layers adjacent to each other overlap each other.

The color filter layer may further include an overcoat layer that overlaps the red, green, and blue color filter layers and covers the red, green, and blue color filter layers.

The present invention also provides a method of manufacturing a semiconductor device, comprising: preparing first and second substrates; Forming a common wiring on the first substrate in a first direction, the common wiring being spaced apart from the gate wiring and the gate wiring, and an outermost common electrode branched from the common wiring at an outermost portion of each pixel region; Forming a gate insulating film over the gate wiring, the common wiring, and the outermost common electrode; Forming a data line crossing the gate line and defining a plurality of pixel regions over the gate insulating layer; Forming a thin film transistor connected to the gate line and the data line in each of the pixel regions; Sequentially forming an insulating material and an inorganic material on the data line and the thin film transistor, and forming a protective layer and an inorganic black matrix including a drain contact hole exposing the thin film transistor; Forming an outermost pixel electrode in contact with the thin film transistor through the drain contact hole and overlapping a part of the outermost common electrode; Forming a red, green, and blue color filter layer on the second substrate; A method of manufacturing a transverse electric field type liquid crystal display device comprising the step of interposing a liquid crystal layer between the first and second substrates, wherein the color filter layers of red, green, and blue in positions corresponding to the inorganic black matrix are formed so as to overlap with each other .

At this time, a data wiring contact hole exposing the data line is formed in the inorganic black matrix.

As described above, according to the present invention, an inorganic black matrix is formed on the first substrate so as to cover the region between the gate wiring and the thin film transistor, and between the data wiring and the common electrode adjacent thereto, There is an effect that the light is prevented from leaking in the region between the electrodes.

Therefore, it is also possible to prevent VAC defects, so that the image quality of the liquid crystal display device can be further improved.

In addition, by shorting the inorganic black matrix to the data line, it is possible to reduce the parasitic capacitance caused by overlapping of the inorganic black matrix and the data line, thereby reducing vertical crosstalk and current consumption.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

2 is a plan view schematically showing a part of an array substrate for a transverse electric field type liquid crystal display according to an embodiment of the present invention.

As shown in the figure, the array substrate 101 for a lateral electric field type liquid crystal display according to the embodiment of the present invention includes a plurality of gate wirings 112 arranged in parallel in the horizontal direction and spaced apart from each other by a predetermined distance, And a data wiring 114 which intersects the two wirings 112 and 116 and which crosses the gate wiring 112 and defines the pixel region P, .

A gate electrode 121 and a gate insulating film (not shown), a first active layer of pure amorphous silicon (not shown) and a first ohmic contact of the impurity amorphous silicon (not shown) are formed at intersections of the gate wirings 112 and the data wirings 114, A thin film transistor Tr composed of a semiconductor layer 125 made of a layer (not shown) and source and drain electrodes 127 and 129 spaced apart from each other is formed.

At this time, the source electrode 127 branches off from the data line 114, and the gate electrode 121 branches off from the gate line 112.

A common electrode 133 is formed in parallel with the pixel electrodes 131a and 131b and the pixel electrodes 131a and 131b connected to the drain electrode 129 in the pixel region P and connected to the common line 116, .

The pixel electrodes 131a and 131b are composed of an extended portion 131a extending from the drain electrode 129 and a plurality of vertical portions 131b extending vertically from the extended portion 131a and spaced apart from each other by a predetermined distance. The common electrode 133 is branched from the common wiring 116 and extended vertically to the pixel region P so as to be offset from the vertical portion 131b of the pixel electrodes 131a and 131b.

The common electrode 133 formed in the pixel region P is spaced apart from the data line 114 by a predetermined distance.

At this time, on the array substrate 101 of the present invention, a thin film transistor Tr is formed by extending to the region between the gate wiring 112, the data wiring 114, the thin film transistor Tr, and the wirings 112 and 114 and the common electrode 133, And the black matrix 150 is formed.

Therefore, the inorganic black matrix 150 already has a structure in which the region between the wirings 112 and 114 and the common electrode 133, which is a region where the light leakage phenomenon occurs, is already cut off.

1) and the second substrate (2 in FIG. 1) as the black matrix (21 in FIG. 1) is formed on the second substrate (2 in FIG. 1) The area occupied by the black matrix (21 in FIG. 1) is widened and the aperture ratio is lowered by forming the black matrix (21 in FIG. 1) to have the cohesion margin in consideration of the misalignment that can be caused by the lateral electric field type liquid crystal display The device can secure the aperture ratio more than the conventional liquid crystal display device in which the black matrix (21 in FIG. 1) formed by patterning including the adhesion margin is formed by directly forming the inorganic black matrix 150 on the array substrate 101 .

Particularly, the inorganic black matrix 150 also prevents light from leaking from the spacing region between the data line 114 and the common electrode 133, thereby allowing the data line 114 and the common electrode 133 to pass therethrough, Thereby preventing a viewing angle cross (VAC) defect in which the light leakage is observed according to the viewing angle of the observer.

In order to prevent the conventional VAC failure, the black matrix (21 in FIG. 1) is formed to have a VAC margin (D in FIG. 1) It is not necessary to consider such a VAC margin (D in Fig. 1).

Therefore, the aperture ratio of the liquid crystal display device is further improved compared with the conventional one.

The reason why the black matrix 150 is made of an inorganic material is that the black matrix 150 made of an inorganic material can be formed with a thickness lower than that of an organic black matrix.

That is, when a black matrix of an organic material is formed on the first substrate 101, a step is generated due to a high thickness of the black matrix, which may cause problems such as rubbing failure.

3 is a cross-sectional view taken along the section line III-III of Fig. 2; Fig.

2, the gate electrode 121 branched from the gate wiring (112 in FIG. 2) is formed in the switching region TrA on the first substrate 101, In the display area AA on the substrate 101, a plurality of common electrodes 133 branched from a common line (116 in FIG. 2) are formed with a predetermined spacing.

A gate insulating layer 123 is formed on the entire surface of the substrate 101 including the gate electrode 121 and the common electrode 133. A semiconductor layer 125 is formed on the gate electrode 121 of the switching region TrA. And source and drain electrodes 127 and 129 are formed on the gate insulating film 123. A data line 114 (see FIG. 2) defining the pixel region P is formed on the gate insulating film 123 in the display region AA, Is formed.

2). The semiconductor layer 125 is composed of an active layer 125a of pure amorphous silicon and an amorphous silicon amorphous silicon layer containing impurities. In this case, And a contact layer 125b.

Here, the gate electrode 121, the gate insulating film 123, the semiconductor layer 125, and the source and drain electrodes 127 and 129 constitute a thin film transistor Tr.

The data lines 114 are formed at the boundaries of neighboring pixel regions P because the data lines 114 are formed by defining the pixel regions P and the data lines 114 are formed at the outermost And the common electrode 133 formed on the substrate 100. FIG.

A protective layer 128 having a drain contact hole 126 exposing the drain electrode 129 of the thin film transistor Tr is formed on the front surface of the substrate 101. A drain contact hole 126 is formed on the protective layer 128, A pixel electrode 131a is formed for each pixel region P to be in contact with the drain electrode 129 through the gate electrode 126. [

At this time, the pixel electrode 131a includes a plurality of vertical portions 131b formed corresponding to a region between the plurality of common electrodes 133 formed at a predetermined interval in the display region AA.

The pixel electrode 131b located at the outermost position in each pixel region P among the pixel electrodes 131a and 131b includes a common electrode 133 formed at a lower portion thereof for improving the aperture ratio in the pixel region P, A part of which is superimposed and formed.

Particularly, the present invention is characterized in that the inorganic black matrix 150 is formed on the protective layer 128 to capture the display area AA at the edge of the display area AA.

That is, the inorganic black matrix 150 is formed on the protective layer 128 so as to cover the region between the gate wiring (112 in FIG. 2), the thin film transistor Tr, and the data wiring 114 and the common electrode 133 adjacent thereto And serves to prevent light from leaking in a region between each of the wirings (112 and 114 in FIG. 2) and the common electrode 133.

1, the transverse electric field type liquid crystal display device according to the present invention includes the inorganic black matrix 150 formed on the first substrate 101 as an array substrate, 2), it is not necessary to form the black matrix (21 in FIG. 1) so as to have an integration margin, and the aperture ratio of the liquid crystal display device can be improved.

Meanwhile, the inorganic black matrix 150 formed on the first substrate 101 of the present invention can be formed without a separate mask process.

Hereinafter, the manufacturing process of the array substrate as described above will be briefly described.

First, a first metal layer is formed on the substrate 101 and patterned to form a gate wiring (112 in FIG. 2), a gate electrode 121, a common wiring (116 in FIG. 2), and a common electrode 133. At this time, the first metal layer is formed by selecting one of conductive metal groups composed of aluminum (Al), aluminum alloy, copper (Cu), tungsten (W), molybdenum (Mo), and chromium (Cr).

At this time, the common electrode 133 is formed by branching in parallel with the data line 114 from the common line (116 in FIG. 2) close to the data line 114.

Next, a gate insulating film 123 is formed by depositing silicon nitride (SiN _x ) or silicon oxide (SiO ₂ ) on the entire surface of the substrate 101 on which the gate wiring (112 of FIG. 2) is formed, An active layer 125a formed of pure amorphous silicon (a-Si: H) and an ohmic contact layer 125b formed of impurity amorphous silicon (n + a-Si: H) are formed on the gate insulating film 123 on the n- ).

Next, a second metal layer is formed on the entire surface of the substrate 101 on which the ohmic contact layer 125b is formed and is patterned to form a data line (FIG. 2) 112 crossing the gate line And a source electrode 127 extending from the data line 114 and a drain electrode 129 spaced apart from the source electrode 127 are formed.

Next, an insulating material and an inorganic material are sequentially coated on the entire surface of the substrate 101 on which the source and drain electrodes 127 and 129 are formed to form the protective layer 128 and the inorganic material layer.

Next, the inorganic material layer is patterned using a halftone mask on top of the inorganic material layer, in which the inorganic material layer is formed by patterning the gate wiring (112 in FIG. 2), the thin film transistor Tr, The inorganic black matrix 150 is formed corresponding to the spaced-apart regions between the common electrodes 133 adjacent to the wiring 114. [

At the same time, a contact hole 126 for exposing a part of the drain electrode 129 of the thin film transistor Tr is formed in the inorganic material layer and the protective layer 128.

In other words, the halftone mask is composed of a transmissive portion, a semi-transmissive portion, and a blocking portion, and a contact hole 126 is formed in the inorganic material layer and the protection layer 128 through the transmissive portion, and an inorganic black matrix 150 is formed through the semi- .

A transparent conductive metal is deposited on the inorganic black matrix 150 and the protective layer 128 and patterned to form the pixel electrodes 131a and 131b which are in contact with the drain electrode 129. [

The pixel electrodes 131a and 131b are composed of an extended portion 131a extending from the drain electrode 129 and a plurality of vertical portions 131b extending vertically from the extended portion 131a and spaced apart from each other by a predetermined distance, The common electrode 133 is branched from the common wiring 116 and extends vertically to the pixel region P so as to be offset from the vertical portion 131b of the pixel electrodes 131a and 131b.

The array board 101 for a transverse electric field type liquid crystal display according to an embodiment of the present invention having such a structure completes a liquid crystal display by forming a liquid crystal layer therebetween and attaching the color filter substrate including the color filter layer therebetween .

A light shielding portion is formed on the color filter substrate in correspondence with the inorganic black matrix 150 formed on the first substrate 101. This will be described in more detail with reference to FIG.

4 is a cross-sectional view schematically showing a liquid crystal panel of a transverse electric field type liquid crystal display device according to an embodiment of the present invention.

As shown in the drawing, the transverse electric field type liquid crystal panel 100 according to the embodiment of the present invention includes a first substrate 101 as an array substrate and a second substrate 102 as a color filter substrate, The liquid crystal layer 103 is interposed between the first substrate 101 and the second substrate 101. [

At this time, the thin film transistor Tr is formed in the switching region TrA which is the intersection of the gate wiring (112 in Fig. 2) and the data wiring 114 of each pixel region P on the first substrate 101, The common electrode 133 and the pixel electrodes 131a and 131b are formed in the display area AA where the image is implemented.

Here, the thin film transistor Tr includes a gate electrode 121, a gate insulating film 123, a semiconductor layer 125, and source and drain electrodes 127 and 129.

A protective layer 128 is formed on the entire surface of the first substrate 101 including the thin film transistor Tr and the pixel electrodes 131a and 131b are electrically connected to the drain electrode 129 of the thin film transistor Tr Lt; / RTI >

The common electrode 133 is formed at a predetermined distance from the pixel electrodes 131a and 131b of the display area AA to form a transverse electric field.

The pixel electrodes 131a and 131b are composed of an extended portion 131a extending from the drain electrode 129 and a plurality of vertical portions 131b extending vertically from the extended portion 131a and spaced apart from each other by a predetermined distance, The common electrode 133 is branched from the common wiring 116 and extends vertically to the pixel region P so as to be offset from the vertical portion 131b of the pixel electrodes 131a and 131b.

Since the data line 114 is formed by defining the pixel region P, the data line 114 is formed at the boundary between the adjacent pixel regions P, And the common electrode 133 formed on the substrate 100.

At this time, a region corresponding to the region between the gate wiring (112 in FIG. 2) and the switching region TrA in which the thin film transistor Tr is formed and the common electrode 133 formed adjacent to the data wiring 114 and the data wiring 114 An inorganic black matrix 150 is formed on the protection layer 128.

Thus, it is not necessary to form the black matrix 150 to have a cohesion margin, and the aperture ratio of the liquid crystal display device can be improved.

It also serves to prevent light from leaking from an area between each wiring (112 and 114 in Fig. 2) and the common electrode 133.

On the second substrate 102 facing the first substrate 101, color filter layers 143a, 143b, and 143c including red, green, and blue color filters sequentially and repeatedly arranged corresponding to the pixel regions P, Respectively.

An overcoat layer 145 is formed on the color filter layers 143a, 143b, and 143c.

At this time, it is preferable that the adjacent color filter layers 143a, 143b, and 143c are formed on the second substrate 102 so as to correspond to the regions where the inorganic black matrix 150 of the first substrate 101 is formed.

Therefore, the light shielding portion C comprising the color filter layers 143a and 143b is formed on the second substrate 102 corresponding to the region where the inorganic black matrix 150 is formed.

This is because the color filter layers 143a, 143b and 143c are formed on the inorganic black matrix 150 formed on the first substrate 101 in order to consider the cohesion margin of the first substrate 101 and the second substrate 102. [ This is because light leakage is generated when a slight misalignment occurs in the process of attaching the first and second substrates 101 and 102 when the corresponding regions are formed apart from each other.

In particular, the region between each of the wirings (112 and 114 in FIG. 2) and the common electrode 133 can prevent the generation of light leakage together with the inorganic black matrix 150 in a double manner.

5 is a plan view schematically showing a part of a color filter substrate according to an embodiment of the present invention.

As shown in the drawing, the color filter substrate 102 for a transverse electric field type liquid crystal display according to the embodiment of the present invention includes red, green and blue color filter layers 143a, 143b and 143c for each pixel region (P in FIG. 4) At this time, the color filter layers 143a, 143b, and 143c adjacent to each other are formed by overlapping portions of the edges.

The overlapped areas of the color filter layers 143a, 143b and 143c adjacent to each other constitute the light shielding portion C of the second substrate 102. Here, each of the color filter layers 143a, 143b, The shielding portion C is formed for each pixel region (P in Fig. 4) defined by the gate wiring (112 in Fig. 2) and the data wiring (114 in Fig. 4) on the substrate Is located in the region corresponding to the gate wiring (112 in Fig. 2) and the data wiring (114 in Fig. 4) of the substrate (101 in Fig. 4).

The overlapped shielding portions C are also located in regions corresponding to the thin film transistors (Tr in FIG. 4) on the first substrate 101 (FIG. 4).

Therefore, a cohesion margin is provided in the case where misalignment occurs in the process of attaching the first substrate 101 (FIG. 4) and the second substrate 102, and in particular, The area between the electrodes (133 in Fig. 4) doubly prevents the light leakage from occurring together with the inorganic black matrix (150 in Fig. 4).

On the other hand, the light-shielding portion C may be formed by superimposing adjacent color filter layers 143a, 143b and 143c on top of one another, or by overlapping all of the red, green and blue color filter layers 143a, 143b and 143c .

The inorganic black matrix 150 formed on the first substrate 101 of the present invention has a high dielectric constant and generates a parasitic capacitance with the data line 114 overlapping the protective layer 128 . This parasitic capacitance increases vertical crosstalk and current consumption.

Thus, in order to reduce the parasitic capacitance, it is preferable that the inorganic black matrix 150 is shorted with the data line 114.

6 is a cross-sectional view schematically showing a structure in which an inorganic black matrix is short-circuited with a data line.

As shown in the drawing, a plurality of common electrodes 133 are formed on the substrate 101 at a predetermined interval, and a gate insulating layer 123 is formed between the common electrodes 133 formed at the outermost periphery of each pixel region P The data lines 114 are formed.

A protective layer 128 is formed on the data line 114. A protective layer 128 is formed on the protective layer 128 to correspond to a region between a plurality of common electrodes 133 spaced apart from each other by a predetermined distance, (131b).

The vertical portion 131b located at the outermost position in each pixel region P among the vertical portions 131b of the pixel electrodes has a common electrode 133 formed on the lower portion thereof for improving the aperture ratio in the pixel region P, And a part thereof are overlapped and formed.

An inorganic black matrix 150 is formed on the protection layer 128 in correspondence to the upper portion of the common electrode 133 formed adjacent to the data line 114 and the data line 114.

On the second substrate 102 facing the first substrate 101, color filter layers 143a, 143b, and 143c including red, green, and blue color filters sequentially and repeatedly arranged corresponding to the pixel regions P Respectively.

An overcoat layer 145 is formed on the color filter layers 143a, 143b, and 143c.

The adjacent color filter layers 143a, 143b and 143c are overlapped with each other in the region corresponding to the region between the data line 114 and the common electrode 133 adjacent to the data line 114 to form the light- Respectively.

The protective layer 128 on the first substrate 101 includes a data line contact hole 127 exposing the data line 114 and the inorganic black matrix 150 is connected to the data line contact hole 127 And is short-circuited with the data line 114.

Accordingly, the parasitic capacitance generated by overlapping the data line 114 and the inorganic black matrix 150 with the protective layer 128 interposed therebetween is reduced, and the vertical crosstalk and current consumption can be reduced.

2) of the gate line (112 in FIG. 2), the thin film transistor Tr, and the data line 114, and the adjacent 2 is formed on the protective layer 128 so as to cover the area between the common electrode 133 and the common electrode 133. In this case, .

Thus, by preventing the light leakage, the image quality of the liquid crystal display device can be further improved.

The parasitic capacitance generated as the inorganic black matrix 150 and the data line 114 overlap with each other can be reduced by shortening the inorganic black matrix 150 with the data line 114, And the consumption current can be reduced.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the spirit of the present invention.

1 is a sectional view schematically showing a liquid crystal panel of a general transverse electric field type liquid crystal display device.

2 is a plan view schematically showing a part of an array substrate for a transverse electric field type liquid crystal display according to an embodiment of the present invention.

3 is a cross-sectional view of a portion cut along the cutting line III-III in Fig. 2; Fig.

4 is a cross-sectional view schematically showing a liquid crystal panel of a transverse electric field type liquid crystal display device according to an embodiment of the present invention.

5 is a plan view schematically showing a part of a color filter substrate according to an embodiment of the present invention.

6 schematically shows a structure in which the inorganic black matrix is short-circuited with the data line

Fig.

Claims (13)

A first substrate and a second substrate; A gate wiring formed in a first direction on the first substrate facing the second substrate and a common wiring which is spaced apart from the gate wiring and a common electrode which is branched from the common wiring and is located at an outermost periphery of each pixel region, and; A data line formed in a second direction intersecting the gate line and the common line and defining a pixel region; A thin film transistor formed in a crossing region of the gate wiring and the data wiring; A pixel electrode connected to the thin film transistor and generating a horizontal electric field with the common electrode in the pixel region; A black matrix of inorganic material formed to cover the gap region between the gate wiring and the thin film transistor, and between the data wiring and the data wiring and the common electrode located at the outermost side of each pixel region; A liquid crystal layer interposed between the first and second substrates, Wherein a protective layer is located between the thin film transistor and the black matrix, the protective layer includes a data line contact hole exposing the data line, and the black matrix is electrically coupled to the data line contact hole through the data line contact hole. Wherein the liquid crystal display device is a liquid crystal display device. delete The method according to claim 1, And a protective layer is disposed between the data line and the black matrix. delete The method according to claim 1, Wherein the thin film transistor comprises a gate electrode connected to a gate wiring, a source electrode and a drain electrode connected to the data wiring, and an active layer. 6. The method of claim 5, And the pixel electrode is in contact with the drain electrode through the black matrix and the drain contact hole formed in the passivation layer. The method according to claim 1, And a color filter layer of red, green, and blue is formed on the second substrate facing the first substrate. 8. The method of claim 7, Wherein the color filter layer is formed so as to overlap with the black matrix. 9. The method of claim 8, Wherein the color filter layer overlaps adjacent color filter layers. 9. The method of claim 8, Wherein the color filter layer overlaps with all of red, green and blue color filter layers. 8. The method of claim 7, Further comprising an overcoat layer covering the red, green and blue color filter layers. Preparing first and second substrates; Forming a common wiring on the first substrate in a first direction, the common wiring being spaced apart from the gate wiring and the gate wiring, and an outermost common electrode branched from the common wiring at an outermost portion of each pixel region; Forming a gate insulating film over the gate wiring, the common wiring, and the outermost common electrode; Forming a data line crossing the gate line and defining a plurality of pixel regions over the gate insulating layer; Forming a thin film transistor connected to the gate line and the data line in each of the pixel regions; Sequentially forming an insulating material and an inorganic material on the data line and the thin film transistor, and forming a protective layer and an inorganic black matrix including a drain contact hole exposing the thin film transistor; Forming an outermost pixel electrode in contact with the thin film transistor through the drain contact hole and overlapping a part of the outermost common electrode; Forming a red, green, and blue color filter layer on the second substrate; Interposing a liquid crystal layer between the first and second substrates Green, and blue color filter layers at positions corresponding to the inorganic black matrix are formed so as to overlap with each other, And forming a data line contact hole exposing the data line in the protective layer, wherein the inorganic black matrix contacts the data line through the data line contact hole. delete

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