KR101645329B1 - Method for fabricating light-emitting diode device and base mold used therefor - Google Patents

Method for fabricating light-emitting diode device and base mold used therefor Download PDF

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Publication number
KR101645329B1
KR101645329B1 KR1020150060438A KR20150060438A KR101645329B1 KR 101645329 B1 KR101645329 B1 KR 101645329B1 KR 1020150060438 A KR1020150060438 A KR 1020150060438A KR 20150060438 A KR20150060438 A KR 20150060438A KR 101645329 B1 KR101645329 B1 KR 101645329B1
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KR
South Korea
Prior art keywords
emitting diode
light emitting
fluorescent resin
base mold
substrate
Prior art date
Application number
KR1020150060438A
Other languages
Korean (ko)
Inventor
김태훈
김천수
김영주
신민호
송보선
Original Assignee
루미마이크로 주식회사
연세대학교 산학협력단
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Application filed by 루미마이크로 주식회사, 연세대학교 산학협력단 filed Critical 루미마이크로 주식회사
Priority to KR1020150060438A priority Critical patent/KR101645329B1/en
Priority to PCT/KR2016/004239 priority patent/WO2016175513A1/en
Priority to US15/531,725 priority patent/US20180287020A1/en
Application granted granted Critical
Publication of KR101645329B1 publication Critical patent/KR101645329B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L2031/0344—Organic materials

Abstract

The present invention relates to a method to fabricate a light emitting diode device using a fluorescent resin base mold, capable of obtaining a plurality of light emitting diode devices without cutting a fluorescent resin by individually and simultaneously molding the fluorescent resin on each light emitting diode chip. The method to fabricate a light emitting diode device according to an embodiment of the present invention comprises: a first step of preparing a base mold (100) having a plurality of dent accommodation units (A); a second step of spraying the fluorescent resin (120) inside the accommodation units (A); a third step of simultaneously obtaining the plurality of light emitting diode devices (200) by installing the light emitting diode chip (10) having a width smaller than that of the accommodation unit (A) in the accommodation unit, making the fluorescent resin (120) pushed up through gaps between the light emitting diode chips (10) and surrounding sidewalls of the light emitting diode chips (10) with the fluorescent resin (120); and a fourth step of separating the light emitting diode devices (200) from the base mold (10).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of fabricating a light emitting diode device using a base mold,

The present invention relates to a method of manufacturing a light emitting diode device, and more particularly, to a light emitting diode device manufacturing method capable of obtaining a plurality of light emitting diode devices without cutting a fluorescent resin by simultaneously molding fluorescent resins individually for each light emitting diode chip using a base mold ≪ / RTI >

BACKGROUND ART [0002] Light emitting diodes (LEDs) are semiconductor devices capable of realizing light of various colors through a PN junction. Recently, blue light emitting diodes and ultraviolet light emitting diodes are manufactured using nitride, It is possible to make white light or other monochromatic light by using a fluorescent material, and its application range is widening.

In the beginning, white light is realized by using light emitting diodes of three colors of red (R), green (G) and blue (B) simultaneously and overlapping each other. However, in this case, there is a problem that three light emitting diodes In recent years, the white light is realized through the combination of the light emitting diode and the fluorescent material as described above, so that the white light is realized through one light emitting diode.

For example, by arranging a fluorescent layer that emits yellow-green or yellow light with a part of the blue light as an excitation source on the blue light emitting diode emitting a wavelength of 430 nm-480 nm, the blue light emission of the light emitting diode and the fluorescence Green light or yellow light of the layer is overlapped to obtain white light.

Conventionally, to obtain a fluorescent layer as disclosed in Korean Patent No. 1352967 (published on Apr. 21, 2014), a curable liquid fluorescent resin composition in which solid phosphor particles are dispersed in a curable liquid resin composition is applied through a dispenser A dispensing process was applied.

FIG. 1 is a view for explaining a conventional method of manufacturing a white light emitting diode device, which is described in Korean Patent No. 1352967.

First, as shown in FIG. 1A, a plurality of light emitting diode chips 10 that emit light of a blue series so that the conductive bumps 11 are attached to the first sheet 1 are mounted on the first sheet 1 at appropriate intervals A spacer 3 higher than the light emitting diode chip 10 is provided on the outer periphery.

Next, as shown in Fig. 1B, the curable liquid phase fluorescent resin composition 20 is applied using a dispenser so that the chip arrangement region in the spacer 3 is filled. This process is referred to as a dispensing process. At this time, as the curable liquid crystal fluorescent material composition 20, a transparent resin in which phosphor particles emitting yellow series are dispersed is used, and a chip arrangement region in the space 3 is filled A sufficient amount is applied.

1C, the light-emitting diode chip 10 and the first sheet 1 are bonded together by the conductive bumps 11 by applying a suitable pressing force after attaching the second sheet 2 on the spacer 3, So that the liquid phase fluorescent resin composition 20 flows into the floating gap between the liquid phase fluorescent resin composition 20 and the liquid phase fluorescent resin composition 20 and is leveled so that the height of the liquid phase fluorescent resin composition 20 becomes flat according to the height of the spacer 3.

Next, as shown in Fig. 1 (d), the curable liquid-phase fluorescent resin composition 20 is cured by using an appropriate method such as heat or ultraviolet ray to obtain the fluorescent resin 21.

Next, as shown in Fig. 1E, the fluorescent resin 21 is cut using a dicing apparatus to obtain the light emitting diode device 30 as shown in Fig. 1F. At this time, the first sheet 1 and the second sheet 2 are removed at an appropriate time before or after the dicing process.

The light emitting diode chip 10 emits blue light and the fluorescent resin 21 is excited by a part of the blue light emitted from the light emitting diode chip 10 to emit yellow light, The light emitted from the fluorescent resin 21 is superimposed on the blue light and the yellow light to form white light when viewed from the outside.

At this time, since the amount of the phosphor particles contained in the fluorescent resin 21 varies depending on the thickness of the fluorescent resin 21, the implementation of the white light is influenced by the thickness of the fluorescent resin 21. Therefore, the thickness t of the fluorescent resin 21 should be cut around the light emitting diode chip 10 so that the white light efficiency of the light emitting diode device 30 obtained in the dicing process is individually fixed, .

According to the above-described conventional method of manufacturing a light emitting diode device, although the fluorescent resin 21 is cured, since the polymer resin has a slight soft feeling, a deviation occurs in the cutting process, There is a problem that the thickness t of the fluorescent resin 21 of the fluorescent resin 21 is not uniform and fine debris such as sawdust generated in the cutting process of the fluorescent resin 21 is present in a state adhering to the light emitting diode device, There are also many worries about deterioration. There is also a problem that the fluorescent resin 21 is wastefully wasted due to the presence of the peeling portion of the fluorescent resin 21 after the cutting.

Korean Registered Patent No. 1352967 (Announcement of February 21, 2014)

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a light emitting diode device manufacturing method capable of solving the above-described conventional problems by simultaneously molding fluorescent resins individually for each light emitting diode chip to obtain a plurality of light emitting diode devices without cutting the fluorescent resin Method.

According to another aspect of the present invention, there is provided a method of manufacturing a light emitting diode device,

A first step of preparing a base mold having a plurality of concave receiving portions;

A second step of applying a fluorescent resin in the accommodating portion;

A light emitting diode chip having a width smaller than that of the accommodating portion is mounted in the accommodating portion so that the fluorescent resin is pushed up along a gap between the side surface of the accommodating portion and the LED chip so that the side surface of the LED chip is bonded to the fluorescent resin A third step of obtaining a plurality of individual LED devices at the same time; And

A fourth step of separating the light emitting diode device from the base mold; And a control unit.

The light emitting diode chip is preferably mounted on the receiving portion with the substrate facing upward and the LED chip facing downward in a state in which the conductive bump is attached to the substrate by a flip chip method.

 The light emitting diode chip may be spaced apart from the bottom surface of the receiving part such that the fluorescent resin is between the bottom surface of the receiving part and the light emitting diode chip.

 The substrate is preferably installed so as to extend over an inlet of the accommodating portion.

 And aligning means for aligning the substrate and the base mold so that the light emitting diode chip can be positioned at a desired position in the accommodating portion is installed at at least one of the base mold and the substrate.

Wherein the fluorescent resin in the second step is in a liquid phase state in which a plurality of phosphor particles are dispersed and a curing process for changing the fluorescent resin from a liquid phase to a solid phase proceeds after the third step, And is preferably performed after the curing process has progressed.

The third step is preferably performed after the semi-curing process for semi-curing the liquid fluorescent resin applied in the second step proceeds.

According to the present invention, since the fluorescent resin is molded to the LED chips in the respective receiving portions of the base mold, the cutting process of the fluorescent resin is not required in obtaining a plurality of LED devices. Therefore, not only the manufacturing process is simple, but also a problem caused by deviation or debris in the cutting process does not occur.

Further, since the thickness of the fluorescent resin to be present around the LED chip can be controlled by adjusting the size of the receiving portion, it is possible to respond to various recipes instantly through selective use of the base mold.

In addition, if an appropriate amount of the fluorescent resin is applied, the fluorescent resin which is scratched in the completion of the light emitting diode device is virtually eliminated, and the waste of the fluorescent resin can be reduced.

1 is a view for explaining a conventional method of manufacturing a white light emitting diode device;
2 is a view for explaining a method of manufacturing a light emitting diode device according to the present invention;
Figs. 3 to 5 are views for explaining the aligning means 140. Fig.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are merely provided to understand the contents of the present invention, and those skilled in the art will be able to make many modifications within the technical scope of the present invention. Therefore, the scope of the present invention should not be construed as being limited to these embodiments.

2 is a view for explaining a method of manufacturing a light emitting diode device according to the present invention. First, as shown in FIG. 2A, a base mold 100 having a plurality of concave receiving portions A is prepared, and a fluorescent resin 120 is applied to the receiving portion A, as shown in FIG. 2B do. The fluorescent resin 120 preferably has a liquid phase in which a plurality of phosphor particles 121 are dispersed.

Next, as shown in FIG. 2C, when the conductive bumps 11 of the light emitting diode chip 10 are mounted on the substrate 130, the substrate 130 faces upward and the light emitting diode chip 10 bumps downward So that the substrate 130 and the base mold 100 are aligned so that the light emitting diode chip 10 can be mounted at a desired position in the accommodating portion A. At this time, the light emitting diode chip 10 has a smaller width than the accommodating portion A.

Subsequently, as shown in FIG. 2D, the substrate 130 approaches the base mold 100 to mount the light emitting diode chip 10 to the receiving portion A. As shown in FIG. The LED chip 10 is pushed by the external force and pushes the fluorescent resin 120 so that the fluorescent resin 120 is pushed up by the gap between the side surface of the receiving portion A and the LED chip 10 The side surface of the light emitting diode chip 10 is surrounded by the fluorescent resin 120.

It is preferable that the fluorescent resin 120 is present also on the opposite side of the conductive bump 11 of the light emitting diode chip 10. For this purpose, the light emitting diode chip 10 should be installed so as to be separated from the bottom surface of the receiving portion A. This can be realized reliably by making the thickness of the LED chip 10 smaller than the depth of the receiving portion A and allowing the substrate 130 to span the entrance of the receiving portion A.

Under the assumption that the thickness of the LED chip 10 and the depth of the receiving portion A are constant, the thickness of the fluorescent resin 120 on the opposite side of the conductive bump 11 is constant for each LED chip 10 . Of course, if the thickness of the fluorescent resin 120 is varied according to the light emitting diode chip 10 by a single molding process, the size of the receiving portion A or the LED chip 10 may be adjusted. Therefore, It is very preferable to cope with the problem.

After the light emitting diode chip 10 is mounted in the receptacle A, the light emitting diode chip 10 is cured to cure the fluorescent resin 120. Thereafter, the substrate 130 and the base mold 100 And a plurality of individual light emitting diode devices 200 in which the light emitting diode chip 10 is surrounded by the fluorescent resin 120 are simultaneously obtained.

The substrate 130 may serve as a circuit board for electrically connecting the conductive bumps 11 and serve as a dummy substrate for supporting the light emitting diode chip 10. In the latter case, The substrate 130 may be removed from the light emitting diode device 200 after the process of FIG.

If the fluorescent resin 120 is present in a liquid state for a long time, the fluorescent particles 121 contained therein may be precipitated by gravity and distributed unevenly. To solve this problem, the fluorescent resin 120 is hardened A process of semi-curing the fluorescent resin 120 may be further carried out prior to the curing.

Here, the term "semi-curing" refers to a state of being loosened to such an extent that the shape can be changed by the pressing force of the light-emitting diode chip 10 after being removed from the liquid state. In the semi-cured state, since the viscosity of the fluorescent resin 120 is higher than that of the liquid phase, the sedimentation of the phosphor particles 121 does not substantially occur.

Figs. 3 to 5 are views for explaining the aligning means 140. Fig. The aligning means 140 is provided at least at one of the base mold 100 and the substrate 130 so that the base mold 100 and the substrate 130 are disposed at a predetermined position without being staggered.

3 shows a case in which a locking protrusion is formed on the substrate 130 as the aligning means 140 so that the base mold 100 is fitted to the stopping jaw. Of course, the latching jaws may be provided on the base mold 100 side or on both sides of the base plate 130 and the base mold 100.

4 and 5 illustrate a case where marks conforming to the base mold 100 and the substrate 130 are formed as the aligning means 140 and the base mold 100 and the base plate 130 are formed so that the marks can be fitted to each other And the substrate 130 is formed with embossed and engraved, respectively.

When the mark is capable of imparting a directionality, for example, a cross shape as shown in FIG. 4, the alignment can be made with only one mark. However, if the mark can not be given a directionality, for example, Two or more marks are required to be provided for alignment.

As described above, according to the present invention, since the fluorescent resin 120 is molded to the light emitting diode chip 10 in each receiving portion A of the base mold 100, a plurality of light emitting diode devices 200 are obtained The cutting process of the fluorescent resin 120 is not required. Therefore, not only the manufacturing process is simple, but also a problem caused by deviation or debris in the cutting process does not occur.

Since the thickness of the fluorescent resin 120 to be present around the LED chip 10 can be adjusted by adjusting the size of the receiving part A, it is possible to readily respond to various recipes through selective use of the base mold 100 .

In addition, if the fluorescent resin 120 is applied in an appropriate amount, the fluorescent resin 120, which is turned into a squiggle in the completion of the light emitting diode device 200, is substantially eliminated, and waste of the fluorescent resin 120 can be reduced.

10: light emitting diode chip 11: conductive bump
100: Base mold 120: Fluorescent resin
121: phosphor particles 130: substrate
140: aligning means 200: light emitting diode device
A:

Claims (7)

A first step of preparing a base mold having a plurality of concave receiving portions;
A second step of accommodating the fluorescent resin in the accommodating portion;
A substrate on which a plurality of light emitting diode chips are mounted is provided on the base mold to allow the light emitting diode chips to be received in the receiving portion, A third step of simultaneously obtaining a plurality of individual light emitting diode devices by raising the light emitting diode chip so that the sides of the light emitting diode chip are surrounded by the fluorescent resin; And
A fourth step of separating the substrate from the base mold; , ≪ / RTI &
An aligning means is installed so that the light emitting diode chip can be positioned at a desired position in the accommodating portion,
Wherein said aligning means comprises:
A projection formed on at least one of the base mold and the substrate; And
A concave groove formed in the other of the base mold and the substrate so that the protrusion can be inserted into the concave groove; And a light emitting diode (LED). The light emitting diode chip according to claim 1, wherein the light emitting diode chip is housed in the receiving portion with the substrate facing upward and the LED chip facing downward with the conductive bump attached to the substrate by a flip chip method Wherein the light emitting diode device has a light emitting diode. 2. The method according to claim 1, wherein the LED chip is spaced apart from the bottom surface of the receiving portion such that the fluorescent resin is between the bottom surface of the receiving portion and the LED chip. delete delete The method according to claim 1, wherein the fluorescent resin in the second step is in a liquid phase state in which a plurality of phosphor particles are dispersed, and after the third step, a curing process for changing the fluorescent resin from a liquid phase to a solid phase proceeds , And the fourth step is performed after the curing process is performed. 7. The method of claim 6, wherein the third step is performed after a semi-curing process for semi-curing the liquid fluorescent resin applied in the second step is performed.
KR1020150060438A 2015-04-27 2015-04-29 Method for fabricating light-emitting diode device and base mold used therefor KR101645329B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020150060438A KR101645329B1 (en) 2015-04-29 2015-04-29 Method for fabricating light-emitting diode device and base mold used therefor
PCT/KR2016/004239 WO2016175513A1 (en) 2015-04-27 2016-04-22 Light-emitting diode device, manufacturing method therefor, and mold used therefor
US15/531,725 US20180287020A1 (en) 2015-04-27 2016-04-22 Light-emitting diode device, manufacturing method therefor, and mold used therefor

Applications Claiming Priority (1)

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KR1020150060438A KR101645329B1 (en) 2015-04-29 2015-04-29 Method for fabricating light-emitting diode device and base mold used therefor

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KR101645329B1 true KR101645329B1 (en) 2016-08-04

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630795A (en) * 2017-03-17 2018-10-09 日亚化学工业株式会社 The manufacturing method of light-transmitting member and the manufacturing method of light-emitting device
WO2018190449A1 (en) * 2017-04-13 2018-10-18 (주)라이타이저코리아 Round chip scale package and manufacturing method therefor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110051769A (en) * 2009-11-11 2011-05-18 삼성엘이디 주식회사 Method for manufacturing luminous element package
JP2012507847A (en) * 2008-11-05 2012-03-29 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Outer molded phosphor lens for LED
KR20130104824A (en) * 2012-03-15 2013-09-25 삼성전자주식회사 Light emitting apparatus and method of fabricating the same
KR101352967B1 (en) 2007-10-22 2014-01-22 삼성전자주식회사 Light emitting diode chip, fabrication method thereof and high power light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101352967B1 (en) 2007-10-22 2014-01-22 삼성전자주식회사 Light emitting diode chip, fabrication method thereof and high power light emitting device
JP2012507847A (en) * 2008-11-05 2012-03-29 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Outer molded phosphor lens for LED
KR20110051769A (en) * 2009-11-11 2011-05-18 삼성엘이디 주식회사 Method for manufacturing luminous element package
KR20130104824A (en) * 2012-03-15 2013-09-25 삼성전자주식회사 Light emitting apparatus and method of fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108630795A (en) * 2017-03-17 2018-10-09 日亚化学工业株式会社 The manufacturing method of light-transmitting member and the manufacturing method of light-emitting device
WO2018190449A1 (en) * 2017-04-13 2018-10-18 (주)라이타이저코리아 Round chip scale package and manufacturing method therefor
US10950762B2 (en) 2017-04-13 2021-03-16 Lightizer Co., Ltd Round chip scale package and manufacturing method therefor

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