KR20130021129A - Apparatus for manufacturing light emitting diode and manufacturing method using the same - Google Patents

Apparatus for manufacturing light emitting diode and manufacturing method using the same Download PDF

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Publication number
KR20130021129A
KR20130021129A KR1020110083476A KR20110083476A KR20130021129A KR 20130021129 A KR20130021129 A KR 20130021129A KR 1020110083476 A KR1020110083476 A KR 1020110083476A KR 20110083476 A KR20110083476 A KR 20110083476A KR 20130021129 A KR20130021129 A KR 20130021129A
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KR
South Korea
Prior art keywords
light emitting
emitting device
mold
plate
adhesive film
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Application number
KR1020110083476A
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Korean (ko)
Inventor
유재성
김태규
Original Assignee
삼성전자주식회사
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Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020110083476A priority Critical patent/KR20130021129A/en
Publication of KR20130021129A publication Critical patent/KR20130021129A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention pedestal; An adhesive film disposed on the pedestal so that at least one light emitting device is attached to an upper surface thereof; A first mold having a frame shape disposed on the adhesive film; The light emitting device is disposed on the adhesive film inside the first mold and includes a plate having at least one through hole to accommodate the light emitting device attached to the adhesive film and a wavelength conversion material covering the light emitting device. Relates to a device.

Description

Light emitting device manufacturing apparatus and light emitting device manufacturing method using same {Apparatus for Manufacturing Light Emitting Diode and Manufacturing Method Using the Same}

The present invention relates to a light emitting device manufacturing apparatus, a light emitting device manufacturing method using the same, and a light emitting device manufactured by the manufacturing method.

A light emitting diode (LED), which is a kind of light emitting element, constitutes a light emitting source by using a compound material such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP, and when a current is applied, a junction portion of a p and n type semiconductor Is a semiconductor device that generates light of various colors based on recombination of electrons and holes.

The light-emitting diodes are environmentally friendly, enable fast response times of several nanoseconds, and are effective for video signal streams, enabling impulsive driving.

In addition, it is excellent in color reproducibility, and has various advantages such as easily changing the brightness and color temperature of light by adjusting the amount of light of red, green, and blue light emitting diode chips, and thus it is widely used as a light emitting device of various light emitting devices.

In particular, by using a light emitting diode using a nitride-based semiconductor as a white light source has been applied to a variety of fields that require a white light source such as a keypad, backlight, traffic lights, guides and lighting of the airport runway.

Recently, a flip chip type light emitting diode chip has been widely used to minimize the number of wires. In general, a flip chip type light emitting diode chip can be used as a light reflection surface. Will be used.

In order to improve the intensity distribution of the luminous flux and luminous intensity and to manufacture a highly reliable package, a light emitting diode chip is generally bonded and installed on a flat ceramic substrate having good thermal characteristics.

In addition, in order to make the light of the light emitting diode chip a white light source, the phosphor is coated on the upper surface and the side surface of the light emitting surface of the light emitting diode chip. However, it is not easy to control the coating thickness of the light emitting diode chip. As the thickness becomes thicker, there is a problem that the conversion efficiency of light is lowered.

In addition, there is a problem in that the upper surface of the phosphor layer is concave, convex, or unevenly formed as the phosphor applied on the light emitting diode chip is not uniform, but is applied more and less for each part.

When the thickness of the phosphor layer is not uniform and does not have a flat shape, the deviation of the color emitted from the light emitting diode chip is severely generated, and thus the reliability of the product is lowered because the finished product does not meet the requirements of the orderer. In order to solve this problem, a high degree of phosphor coating technology is required, which leads to a decrease in mass productivity, which increases the manufacturing time and cost of the product.

On the other hand, in order to solve this problem, some techniques for a light emitting device in which a phosphor layer is formed on a light emitting diode chip in advance before fabrication of a package using a printing method are disclosed.

However, the conventional method is to simply inject the phosphor into the pre-mold using a dispensing nozzle to form the phosphor layer. In such a method, the uniformity of the surface of the phosphor layer to be applied is still not high. As a result, the light efficiency of the product was lowered and it was difficult to match the height distribution.

Accordingly, there is a need for a light emitting device manufacturing apparatus and a manufacturing method using the same, which are easy to manufacture and effectively control the thickness uniformity and height distribution of phosphors in view of these matters.

In order to solve the above problems, an object of the present invention is to reduce the color variation of the light emitting diode chip by uniformly and easily adjusting the thickness of the wavelength conversion material applied on the light emitting device to improve the reliability of the finished product To provide a light emitting device manufacturing apparatus and a light emitting device manufacturing method using the same that can reduce the manufacturing time and manufacturing cost of the.

Another object of the present invention is to flatten the surface of the wavelength conversion layer applied to the light emitting device so that the height distribution is ± 5 μm or less, so that the light emission can meet the requirements of the height distribution required in most light emitting device packages. A device manufacturing apparatus and a light emitting device manufacturing method using the same are provided.

One aspect of the invention, the pedestal; An adhesive film disposed on the pedestal so that at least one light emitting device is attached to an upper surface thereof; A first mold having a frame shape disposed on the adhesive film; The light emitting device is disposed on the adhesive film inside the first mold and includes a plate having at least one through hole to accommodate the light emitting device attached to the adhesive film and a wavelength conversion material covering the light emitting device. Provide a device.

In one embodiment of the present invention, it may include a planarization means for planarizing the upper surface of the wavelength conversion layer formed in the through hole to correspond to the upper surface of the plate. In this case, the planarization means may be a scraper.

In an embodiment of the present disclosure, the plate may further include a removal means for disposing the plate inside the first mold or separating from the inside of the first mold.

In this case, the removal means may be coupled to the plate and formed of a mold-shaped second mold formed in a smaller size than the first mold.

In addition, the second mold may be configured to be spaced apart from the first mold.

In one embodiment of the present invention, a position display portion indicating the attachment position of the light emitting device may be formed on the adhesive film upper surface.

In one embodiment of the present invention, the plate may be formed in the inner wall of the through hole vertically.

In one embodiment of the present invention, the plate may be formed to be inclined inner wall of the through hole.

Another aspect of the invention, the step of attaching an adhesive film on the bottom of the mold-shaped mold; Disposing the first mold to which the adhesive film is attached on a pedestal; Attaching at least one light emitting device on the adhesive film; Disposing a plate having at least one through hole on the adhesive film inside the first mold such that the light emitting element is accommodated in each through hole; Putting a wavelength conversion material on the plate and moving the scraper horizontally on the plate to form a wavelength conversion layer having an upper surface corresponding to the upper surface of the plate in the through hole; Separating the pedestal and plate from the first mold and curing the wavelength conversion layer; And separating the first mold from the adhesive film and separating the light emitting device from the adhesive film. It provides a light emitting device manufacturing method comprising a.

In one embodiment of the present invention, the second mold of a frame shape formed in a smaller size than the first mold can be bonded to the upper surface of the plate.

In one embodiment of the present invention, the wavelength conversion layer may form an outer circumferential surface vertically by a through hole of the plate in which the inner wall is vertically formed.

In one embodiment of the present invention, the wavelength conversion layer may be formed to be inclined to the outer peripheral surface by the through hole of the plate in which the inner wall is inclined.

In one embodiment of the present invention, the adhesive film may form a position display portion on the upper surface, and attach a light emitting device to the position display portion.

Another aspect of the present invention provides a light emitting device manufactured by such a light emitting device manufacturing method.

According to an embodiment of the present invention, simply manufacturing the light emitting device having a wavelength conversion layer of the desired standard by adjusting the height of the plate has the effect of reducing the production time and manufacturing cost of the product.

In addition, since the uniformity of the surface of the phosphor layer can be easily increased by using a scraper, the product can be easily adjusted to the height distribution of the wavelength conversion layer applied on the top and side surfaces of the light emitting device to ± 5 μm or less, which is required by most light emitting device packages. There is an effect that can increase the added value of.

1 is an exploded perspective view showing a light emitting device manufacturing apparatus and an LED chip according to an embodiment of the present invention.
Figure 2 is a side cross-sectional view showing a state in which the pedestal, the adhesive film and the first mold of the light emitting device manufacturing apparatus of FIG.
3 is a side cross-sectional view showing a state in which a plate and a second mold are further installed in FIG. 2.
4 is a perspective view of the combination of FIG.
Fig. 5 is a side sectional view of Fig. 4. Fig.
FIG. 6 is a perspective view of a light emitting device manufacturing apparatus of FIG. 4, partially implanted with a phosphor injected into a second mold, and a scraper installed on a plate; FIG.
FIG. 7 is a side cross-sectional view illustrating a state in which a pedestal is separated from the light emitting device manufacturing apparatus of FIG. 4 and a light emitting device coated with a phosphor.
FIG. 8 is a plan view partially cut away from FIG. 7.
9 is a side cross-sectional view showing a light emitting device having a phosphor layer attached on an adhesive film.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

However, embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below.

Further, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art.

Accordingly, the shapes and sizes of the elements in the drawings may be exaggerated for clarity of description, and the elements denoted by the same reference numerals in the drawings are the same elements.

1 to 9, a light emitting device manufacturing apparatus and a manufacturing method using the same according to an embodiment of the present invention will be described.

Referring to FIG. 2, first, a sheet-like adhesive film 20 is attached to the bottom of the first mold 30 having a rectangular frame shape, and the adhesive film 20 is mounted on a work table (not shown). Place on a flat top surface of 10).

Thereafter, the plurality of light emitting devices 40 are attached on the adhesive film 20 so that bumps (not shown) face the adhesive film 20 at predetermined intervals. At this time, it is preferable that the arrangement of the light emitting device 40 is a lattice shape so that a larger number of light emitting devices 40 can be attached at one time.

As long as the light emitting element 40 can be used as a light source in the present embodiment, any one can be employed. However, it is preferable to employ an LED chip in terms of miniaturization and high efficiency of the light source.

In addition, the adhesive film 20 displays the attachment position of the light emitting device 40 on the upper surface to increase the convenience of manufacturing and to lower the defective rate of the product which may occur while the position of the through hole of the plate to be described later is shifted. The light emitting device position display unit 21 having one of various shapes such as "I" or "I" may be formed. The position display portion 21 is preferably composed of a flat printing portion, but if necessary, the adhesive film 20 may be configured to have a groove shape convex upward or concave downward by pressing the adhesive film 20 upward or downward.

3 to 5, the plate 50 is disposed on the upper surface of the adhesive film 20 inside the first mold 30. The plate 50 has a plurality of through holes 51 corresponding to the light emitting elements 40, and the plurality of light emitting elements 40 attached to the adhesive film 20 are accommodated in the plurality of through holes 51, respectively. The plate 50 is disposed on the upper surface of the adhesive film 20. To this end, the size of the plate 50 is preferably manufactured to match the internal space of the first mold 30.

Depending on how the thickness of the plate 50 is adjusted, the thickness of the through hole 51 is equally designated, and the thickness of the through hole 51 increases the height of the wavelength conversion layer 80 formed in the through hole 51. Will be specified.

The decrease rate of light conversion efficiency according to the thickness of the wavelength conversion layer 80 results in a luminous flux decrease of 1% per 10 μm of the wavelength conversion material 81. Accordingly, the thickness of the through hole 51 is preferably formed to be 100 μm or less in which the light scattering effect of the wavelength conversion layer 80 is optimized.

In addition, since the plate 50 is generally formed in a thin plate shape, it is not easy to pick up, so it may not be easy to arrange the plate 50 inside the first mold 30 or separate it from the inside of the first mold 30. The second mold 60 having a rectangular frame shape is coupled to the upper surface of the plate 50 as a means for inserting and removing the plate, and the second mold 60 is used to plate the plate 50 inside the first mold 30. It can be easily inserted in.

In this case, the second mold 60 is formed to have a smaller size than the first mold 30 so that the second mold 60 may be disposed inside the first mold 30. Preferably, the second mold 60 may be easily inserted into or removed from the first mold 30. The gap is formed between the upper ends of the first mold 30.

To this end, the second mold 60 has a long width smaller than the first mold 30 by a predetermined length, and as another example, it is easy to match the position of the through hole 51 and the LED chip 40 when the plate 50 is disposed. More preferably, the bottom outer width of the second mold 60 and the bottom inner width of the first mold 30 are formed to coincide with each other, and then the top of one of the first mold 30 or the second mold 50 is spaced apart from each other. It can be configured by changing to various forms, such as to be inclined as possible.

On the other hand, the through-hole 51 of the plate 50 is preferably formed in the inclined shape so that the inner wall is easy to separate from the through-hole 51 after the manufacturing of the light emitting device 40.

However, the through hole of the present invention is not limited to such a shape, and since the cavity has a vertical vertical package, the through hole of the plate 50 may be changed into various shapes such as a vertical shape of the inner wall if necessary. .

In addition, the inclination slope of the outer circumferential surface of the wavelength conversion layer 80 formed on the light emitting device 40 may be changed within various ranges according to the light emitting device 40. That is, in consideration of various characteristics and directivity angles of the light emitting device 40, the inclination inclination of the inner wall of the through hole 51 is the amount of light that is reflected toward the front of the light emitting device 40 and the light scattered laterally. It is configured to be close to 30-60 °, preferably 45 °, which is an inclination range of the outer circumferential surface of the wavelength conversion layer 80 which can be efficiently optimized.

6, a wavelength conversion material 81, for example, a phosphor, is introduced onto one end of the plate 50 into the second mold 60, and the scraper 70 is disposed at one end of the plate 50. The wavelength conversion layer 80 covering the top and side surfaces of the light emitting device 40 by injecting the wavelength conversion material 81 through each through hole 51 of the plate 50 by moving the planarization means such as ). At this time, the upper surface of the wavelength conversion layer 80 has a flat surface corresponding to the upper surface of the plate 50 by the scraper 70.

In another embodiment, a wavelength conversion material is injected into each through hole 51 of the plate 50 by using a dispenser or the like, and the light emitting device is moved by moving the scraper 70 horizontally from one end of the plate 50. The wavelength conversion layer 80 may be formed to cover the top and side surfaces of the 40.

At this time, except for the wavelength conversion material 81 filled in each through-hole 51 of the plate 50, the wavelength conversion material 81 exposed to flow over it is scraped and pushed to one side to remove the wavelength conversion layer ( The upper surface of 80 is flattened to correspond to the upper surface of the plate 50.

In general, the height distribution requirement of the upper surface of the light emitting diode chip is ± 5㎛ or less, and according to the conventional printing method, the height dispersion is about ± 30㎛, so that it greatly falls short of the requirements desired by the customer. However, according to the above planarization operation, it is possible to easily match the height distribution requirement of the wavelength conversion layer formed on the light emitting diode chip to ± 5 μm or less.

On the other hand, in the present embodiment, although the scraper is used as the planarization means, the wavelength conversion layer 80 can be flattened by removing the wavelength conversion material 81 overflowing over the through hole 51 of the plate 50. Of course, other means can be used as well, but the present invention is not limited thereto.

Subsequently, in order to remove some of the bubbles contained in the wavelength conversion layer 80 with reference to FIGS. 7 and 8, the adhesive film 20 is separated from the upper surface of the pedestal 10 after at least 15 minutes of bubble removal. Thereafter, the plate 50 is separated from the adhesive film 20 by using the second mold 60, and the wavelength conversion layer 80 formed on the light emitting device 40 is cured.

Thereafter, the first mold 30 is separated from the adhesive film 20, and if necessary, the adhesive film 20 to which the light emitting device 40 is attached is cut to an appropriate size and then attached to the bottom surface of the light emitting device 40. When the adhesive film 20 is removed using an adhesive tape or the like, the light emitting device having the wavelength conversion layer 80 is completed as shown in FIG. 9.

On the other hand, when the inner wall of the through hole 51 of the plate 50 is formed vertically, the final product also completes a light emitting device having a wavelength conversion layer whose outer peripheral surface is vertical.

The present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited only by the appended claims.

It will be apparent to those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. something to do.

10; Pedestal 20; Adhesive film
21; Position indicator 30; First mold
40; LED chip 50; plate
51; Through hole 60; Second mold
70; Scraper 80; Wavelength conversion layer
81; Wavelength conversion material

Claims (15)

Pedestal;
An adhesive film disposed on the pedestal so that at least one light emitting device is attached to an upper surface thereof;
A first mold having a frame shape disposed on the adhesive film; And
The light emitting device is disposed on the adhesive film inside the first mold and includes a plate having at least one through hole to accommodate the light emitting device attached to the adhesive film and a wavelength conversion material covering the light emitting device. Device. The method of claim 1,
Planarization means for planarizing an upper surface of the wavelength conversion layer formed in the through hole to correspond to an upper surface of the plate; Light emitting device manufacturing apparatus comprising a. The method of claim 2,
The flattening means is a light emitting device manufacturing apparatus, characterized in that the scraper. The method according to claim 1 or 2,
And an inserting means for disposing the plate inside the first mold or separating the plate from the inside of the first mold. 5. The method of claim 4,
The insertion and removal means is a light emitting device manufacturing apparatus, characterized in that the second mold of the frame shape coupled to the plate formed in a smaller size than the first mold. 5. The method of claim 4,
The inserting and detaching means is a second mold of a frame shape coupled to the plate and formed in a smaller size than the first mold, wherein the second mold is configured to be spaced apart from the first mold. The method of claim 1,
Light emitting device manufacturing apparatus characterized in that the position display portion indicating the mounting position of the light emitting device on the adhesive film. The method according to claim 1 or 2,
The plate is a light emitting device manufacturing apparatus, characterized in that the inner wall of the through-hole is formed vertically. The method according to claim 1 or 2,
The plate is a light emitting device manufacturing apparatus, characterized in that the inner wall of the through-hole is formed to be inclined. Attaching an adhesive film to the bottom of the mold-shaped first mold;
Disposing the first mold to which the adhesive film is attached on a pedestal;
Attaching at least one light emitting device on the adhesive film;
Disposing a plate having at least one through hole on the adhesive film inside the first mold such that the light emitting element is accommodated in each through hole;
Putting a wavelength conversion material on the plate and moving the scraper horizontally on the plate to form a wavelength conversion layer having an upper surface corresponding to the upper surface of the plate in the through hole;
Separating the pedestal and plate from the first mold and curing the wavelength conversion layer; And
Separating the first mold from the adhesive film, and separating the light emitting device having the wavelength conversion layer from the adhesive film; Light emitting device manufacturing method comprising a. The method of claim 10,
The method of manufacturing a light emitting device, characterized in that for coupling to the upper surface of the plate of a mold-shaped second mold formed in a smaller size than the first mold. The method of claim 10,
The wavelength conversion layer is a light emitting device manufacturing method characterized in that the outer peripheral surface is formed vertically by the through-hole of the plate in which the inner wall is formed vertically. The method of claim 10,
The wavelength conversion layer is a light emitting device manufacturing method characterized in that the outer peripheral surface is formed to be inclined by the through hole of the plate in which the inner wall is inclined. The method of claim 10,
The adhesive film has a position display portion formed on the upper surface, and the light emitting device manufacturing method characterized in that to attach a light emitting element to the position display portion. A light emitting device manufactured by the light emitting device manufacturing method according to any one of claims 10 to 14.
KR1020110083476A 2011-08-22 2011-08-22 Apparatus for manufacturing light emitting diode and manufacturing method using the same KR20130021129A (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160103583A (en) * 2015-02-24 2016-09-02 주식회사 세미콘라이트 Semiconductor light emitting device, method of manufacturing the same, and light source module having the same
US9824952B2 (en) 2015-03-31 2017-11-21 Lumens Co., Ltd. Light emitting device package strip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160103583A (en) * 2015-02-24 2016-09-02 주식회사 세미콘라이트 Semiconductor light emitting device, method of manufacturing the same, and light source module having the same
US9824952B2 (en) 2015-03-31 2017-11-21 Lumens Co., Ltd. Light emitting device package strip

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