JP2013030544A - Method of manufacturing semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor light-emitting device capable of preventing variation in luminous color among products or that in a light emission plane.SOLUTION: A plurality of light-emitting elements 20 are mounted on an element mounting surface of a substrate 10. A metal mold 120 contains a reference surface which includes a plurality of cavities 122 arranged in association with the array of the plurality of light-emitting elements on the substrate, and a phosphor containing resin 30, which contains phosphor particles 32 having average particle size of 5 μm or larger, is supplied into the metal mold. The phosphor containing resin is compression-molded under such condition as the light-emitting elements are housed in the respective cavities while the element mounting surface a and the reference surface b tightly contact each other with the phosphor containing resin in between. In a step of the compression molding, a thickness L of the phosphor containing resin which is interposed between the element mounting surface and the reference surface is set to be 15 times or more of average particle size of the phosphor particle.

Description

  The present invention relates to a method for manufacturing a semiconductor light emitting device including a light emitting element such as an LED (light emitting diode).

  2. Description of the Related Art As a semiconductor light emitting device including a light emitting element such as an LED, an LED chip mounted on a substrate is sealed with a sealing resin molded into a lens shape (for example, Patent Document 1). Compression molding (compression molding) and transfer molding are known as molding methods for the sealing resin.

  In compression molding, for example, resin molding is performed in the following procedure. First, a release film for improving releasability is attached to a mold cavity heated to a predetermined temperature. Subsequently, a liquid resin material is applied to the cavity of the mold. Next, a substrate on which the LED chip is mounted is disposed so as to face the mold. Next, with the periphery of the substrate and the mold as a sealed space, the sealed space is decompressed to remove bubbles contained in the resin material (defoaming). Next, the mold is pressed against the substrate at a predetermined molding pressure and held for a certain period of time to temporarily cure the resin material. Next, the resin material bonded to the substrate is peeled from the mold together with the release film. Thereafter, the resin material is fully cured by further heat treatment.

JP 2011-101066 A

  According to the compression molding method as described above, by providing a plurality of cavities in the mold, a large number of LED chips can be sealed in a single process, and productivity is improved. Moreover, it becomes easy to manufacture an LED module in which a plurality of LED chips are mounted on a substrate.

  By the way, in order to obtain a desired emission color, the LED chip is sealed with a resin containing phosphor particles that convert the wavelength of light emitted from the LED chip to the long wavelength side. However, when the phosphor-containing resin is compression molded, the following problems occur. That is, when the phosphor-containing resin that seals each of the plurality of LED chips mounted on the substrate is molded by compression molding, the density distribution of the phosphor particles is biased in the phosphor-containing resin. More specifically, the density of the phosphor particles in the vicinity of the outer edge portion of the light emitting surface of the completed light emitting device (that is, the end portion of the phosphor-containing resin) becomes higher than other portions. The uneven density distribution of the phosphor particles causes variations in emission color among products having a single LED chip mounted, and uneven emission colors in the light emitting surface of a module product having a plurality of LED chips mounted thereon. (Color temperature variation). For these reasons, compression molding of a phosphor-containing resin is hardly practically used at present.

  The present invention has been made in view of the above points, and in the case of compression molding a phosphor-containing resin, by eliminating the uneven density distribution of phosphor particles inside the resin material, the emission color between products It is an object of the present invention to provide a method for manufacturing a semiconductor light emitting device capable of preventing variations in color and unevenness in color of emitted light (color temperature difference) in a light emitting surface.

  The semiconductor light emitting device of the present invention has a step of mounting a plurality of light emitting elements on an element mounting surface of a substrate, and a plurality of cavities arranged corresponding to the arrangement of the plurality of light emitting elements on the substrate on a reference surface. Supplying a phosphor-containing resin containing phosphor particles having an average particle size of 5 μm or more to a mold, each of the light emitting elements is accommodated in each of the cavities, and the element mounting surface and the reference surface are Compression-molding the phosphor-containing resin with the phosphor-containing resin sandwiched therebetween, and in the compression molding step, the fluorescence interposed between the element mounting surface and the reference surface The thickness of the body-containing resin is set to 15 times or more the average particle diameter of the phosphor particles.

  According to the method for manufacturing a semiconductor light emitting device according to the present invention, the fluidity of the phosphor-containing resin interposed between the mold and the substrate is improved during the compression molding of the phosphor-containing resin. As a result, the phosphor particles can move in the resin without causing stagnation, and the uneven density distribution of the phosphor particles is eliminated. Therefore, in a semiconductor light emitting device in which a plurality of light emitting elements are mounted on a substrate, it is possible to reduce unevenness in color of emitted light (color temperature difference) in the light emitting surface. Further, in a light-emitting device manufactured by dividing a substrate for each light-emitting element, it is possible to prevent variations in emission color between the light-emitting devices, and the yield is improved.

It is a fragmentary sectional view which shows the state inside the shaping | molding apparatus at the time of compression molding. FIG. 2A is a plan view showing a method of manufacturing a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG. 3A is a plan view showing a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention, FIG. 3B is a cross-sectional view taken along line 3b-3b in FIG. FIG. 4A to FIG. 4C are plan views showing variations in the application position and application shape of the phosphor-containing resin. 5A and 5B are cross-sectional views showing a method for manufacturing a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 5C is an enlarged view of a region surrounded by a broken line in FIG. 5B. FIG. 6A is a plan view showing the configuration of the semiconductor light emitting device according to the embodiment of the present invention, FIG. 6B is a cross-sectional view taken along line 6b-6b in FIG. 6A, and FIG. FIG. 6B is an enlarged view of a region surrounded by a broken line in FIG. 6B, and FIG. 6D is a cross-sectional view showing a configuration of a semiconductor light emitting device according to a comparative example. It is a graph which shows the result of having evaluated the color temperature difference in the light emission surface about the samples 1-3. It is a table | surface which shows the content of the measure tried in order to prevent the residence of fluorescent substance containing resin, and its effect.

  First, an estimation mechanism in which the density distribution of the phosphor particles is biased when the phosphor-containing resin is compression molded will be described with reference to FIG. FIG. 1 is a partial cross-sectional view showing an internal state of a molding apparatus during compression molding.

  The molding apparatus includes a substrate holding unit 110 that holds the substrate 10 by a vacuum suction mechanism or the like, a mold 120 having a plurality of cavities 122, a biasing force applied upward by a spring mechanism or the like, and a side surface of the mold 120. And a sliding portion 130 capable of sliding on the top. The substrate 10 on which the LED chip 20 is mounted is held on the substrate holding surface of the substrate holding unit 110. The phosphor-containing resin 30 supplied into the cavity 122 is heated and pressurized while being sandwiched between the substrate 10 and the mold 120, and this state is maintained until a predetermined molding time elapses. At this time, a minute gap 100 is formed between the element mounting surface a of the substrate 10 and the reference surface b of the mold 120 (a flat surface extending around the cavity 122). The gap 100 is unique in compression molding, and the phosphor-containing resin 30 spreads over the entire surface of the mold 120 through the gap 100. The phosphor-containing resin 30 spreading over the entire surface of the mold 120 flows by heating, and the phosphor particles 32 move in the gap 100. The end of the gap 100 is blocked by the sliding member 130, and the resin flow is stopped or slowed down. For this reason, the phosphor particles that have arrived at the end of the gap 100 decrease or stop moving and stay at the end of the gap 100. Since the phosphor-containing resin 30 filled in the gap 100 remains as a thin film layer in the finished product, an area where the density of the phosphor particles is high occurs at the end of the phosphor-containing resin 30. Therefore, unevenness of emission color (color temperature variation) occurs in the emission surface.

  Based on the above estimation mechanism, the present inventors have examined various measures that can be expected to prevent phosphor particles from staying. As a result, the present inventors have found a manufacturing method in which phosphor particles are dispersed almost uniformly in a resin when the phosphor-containing resin is compression-molded to eliminate unevenness in emission color in the light emitting surface.

  Below, the manufacturing method of the semiconductor light-emitting device which concerns on the Example of this invention is demonstrated, referring FIGS.

First, a substrate 10 for mounting an LED chip is prepared. The substrate 10 is, for example, a glass epoxy substrate having a thickness of 0.7 mm and 150 mm × 60 mm. On the element mounting surface a of the substrate 10, for example, a plurality of die pads and bonding pads configured by Au / Ni / Cu plating on a Cu foil are formed (not shown). The die pads are arranged on the substrate 10 in a grid shape, for example. The substrate 10 may be a ceramic substrate (base material: Al ₂ O ₃ , AlN, etc.) or a metal core substrate (base material: Cu, Al, etc.).

  Next, after a die attach material is formed on each die pad by a method such as printing or dispensing, the LED chip 20 is mounted on each die pad. For example, a white silicone-based adhesive can be used as the die attach material. Thereafter, the die attach material is cured by, for example, heat treatment at 150 ° C. for 4 hours. In the present embodiment, the LED chips 20 are arranged on the substrate 10 in the form of 4 rows × 7 columns, but the present invention is not limited to this. The LED chip 20 is, for example, a blue LED including a GaN-based semiconductor film having a thickness of 0.12 mm and 0.5 mm × 0.3 mm, and has an n electrode and a p electrode on the chip surface. The size of the LED chip and the material of the semiconductor film can be changed as appropriate. Next, wire bonding is performed to electrically connect the n-electrode and p-electrode of each LED chip 20 and bonding pads formed on the substrate 10 via bonding wires 22. 2A is a plan view of the substrate 10 on which the plurality of LED chips 20 are mounted, and FIG. 2B is a cross-sectional view taken along line 2b-2b in FIG.

  Two or more LED chips 20 mounted on the substrate 10 may be connected to each other in series or in parallel. For example, in this embodiment, seven LED chips arranged in a line may be connected in series with each other. In addition, each of the LED chips 20 may be electrically separated from each other on the substrate 10. The LED chip 20 may be a flip chip type. In this case, each LED chip is electrically connected by a conductor wiring formed on the substrate 10 instead of the bonding wire.

Next, a phosphor-containing resin 30 in which a liquid light-transmitting silicone resin and phosphor particles 32 are mixed is prepared. As the phosphor, for example, a YAG phosphor (yellow light emitting phosphor: Y ₃ Al ₅ O ₁₂ : Ce ³⁺ ) can be used. The concentration of the phosphor particles to be mixed is set according to the emission color. In this embodiment, the color temperature of the emitted color is aimed at 5000K, and the concentration of the phosphor particles 32 is 11.5% by weight. In this example, phosphor particles having an average particle diameter of 10.7 μm ± 1.2 μm were used. If the average particle diameter of the phosphor particles is too small, the number of phosphor particles to be mixed with the resin in order to obtain a desired emission color increases. Then, the amount of absorption of the light passing through the phosphor-containing resin by the phosphor particles increases, and the light emission efficiency decreases. Therefore, the average particle diameter of the phosphor particles is preferably 5 μm or more, which is about 10 times the emission wavelength. Moreover, it is also possible to use an epoxy resin, a hybrid resin (a mixture of an epoxy resin and a silicone resin), and a urethane resin as the light transmissive resin. Moreover, in order to prevent that resin hardens | cures immediately after apply | coating resin to the heated metal mold | die, it is good also as mixing a hardening inhibitor with resin. As the phosphor particles, in addition to the above, a green light-emitting phosphor (Y ₃ (Al, Ga) ₅ O ₁₂ : Ce ³⁺ ) or a red light-emitting phosphor (CaAlSiN ₃ : Eu) can be used.

  Next, the mold 120 attached to the molding apparatus is heated to a predetermined molding temperature (for example, 115 ° C.). The mold 120 has hemispherical cavities 122 arranged in a form of 4 rows × 7 columns corresponding to the arrangement form of the LED chips 20 arranged on the substrate 10. By making the shape of the cavity 122 hemispherical, the molded phosphor-containing resin 30 can function as a lens for light distribution control. Next, a release film made of Teflon (registered trademark) or the like is attached to the surface of the mold 120 along the surface shape of each cavity 122. Next, a predetermined amount of the phosphor-containing resin 30 is applied (supplied) to the surface of the mold 120. 3A is a plan view of the mold 120 to which the phosphor-containing resin 30 is applied, and FIG. 3B is a cross-sectional view taken along line 3b-3b in FIG. The phosphor-containing resin 30 may be applied, for example, to one place at the center of the surface of the mold 120 (one-point application). FIG. 4A to FIG. 4C are plan views showing variations in the application position and application shape of the phosphor-containing resin 30. As shown in FIG. 4A, the phosphor-containing resin 30 may be applied to a plurality of locations on the surface of the mold 120 (multi-point application). Further, as shown in FIG. 4B, it may be applied in a line along the arrangement of the cavities 122. Moreover, as shown in FIG.4 (c), you may apply | coat to a wave shape.

  Next, as shown in FIG. 5A, the substrate 10 on which the LED chip 20 is mounted is set on the substrate holding part 110 associated with the molding apparatus, and the substrate 10 and the substrate 10 are lifted by a lifting mechanism (not shown) of the molding apparatus. These are brought close to each other while facing the mold 120. At this time, the molding apparatus is configured so that the periphery of the substrate 10 and the mold 120 is a sealed space. Subsequently, the sealed space is decompressed by a vacuum pump to remove bubbles contained in the phosphor-containing resin 30 (defoaming).

  Next, as shown in FIG. 5B, the mold 120 is pressed upward by a pressurizing mechanism (not shown) of the molding apparatus, and the mold 120 is pressed against the substrate 10. FIG.5 (c) is an enlarged view of the area | region enclosed with the broken line in FIG.5 (b). Each of the LED chips 20 mounted on the substrate 10 is accommodated in each cavity 122. The phosphor-containing resin 30 is deformed by contact with the substrate 10 and is formed between the element mounting surface a of the substrate 10 and the reference surface b of the mold 120 (a flat surface extending around each cavity 122). The gap 100 is filled. That is, the phosphor-containing resin 30 is supplied to each of the cavities 122 through the gap 100 and spreads on the element mounting surface of the substrate 10. In other words, a phosphor-containing resin layer (hereinafter referred to as a thin film portion 30 a) having a thickness L corresponding to the width of the gap 100 between the element mounting surface a of the substrate 10 and the reference surface b of the mold 120. It is formed. The molding apparatus applies heat and pressure to the phosphor-containing resin 30 with the phosphor-containing resin thin film portion 30 a sandwiched between the substrate 10 and the mold 120. The reference surface b is substantially the upper surface of the release film disposed on the mold when molding is performed by attaching a release film to the surface of the mold 120.

  The thickness L (that is, the width of the gap 100) L of the phosphor-containing resin thin film portion 30a is 15 times or more the average particle diameter of the phosphor particles 32 contained in the phosphor-containing resin 30, and the element mounting surface of the substrate 10 It is set to be smaller than the distance t from a to the upper surface of the LED chip 20. The thickness L of the thin film portion 30a of the phosphor-containing resin can be controlled by, for example, the coating amount (supply amount) of the phosphor-containing resin 30. That is, since the volume of the phosphor-containing resin 30 interposed between the substrate 10 and the mold 120 is increased by increasing the coating amount of the phosphor-containing resin 30, the thickness of the thin film portion 30a of the phosphor-containing resin is increased. The thickness can be increased. The application amount of the phosphor-containing resin 30 can be controlled in units of 0.01 g.

The gap 100 formed between the substrate 10 and the mold 120 serves as a flow path through which the phosphor-containing resin 30 flows in the heated and pressurized state shown in FIGS. 5 (b) and 5 (c). By increasing the width of the gap 100, the fluidity of the phosphor-containing resin 30 is improved. By setting the width of the gap 100 to 15 times or more the average particle diameter of the phosphor particles 32, the phosphor particles 32 that arrive at the end of the gap 100 (that is, the end of the mold 120) It becomes possible to move so as to be folded, and the retention of the phosphor particles 32 at the end of the mold 120 is eliminated. Thereby, the uneven distribution of the density distribution of the phosphor particles 32 in the phosphor-containing resin 30 is eliminated, and the phosphor particles 32 can be uniformly dispersed in the resin. In this compression molding step, the molding temperature is 115 ° C., the molding pressure is 30 kgf / cm ² , the molding time is 300 seconds, the vacuum holding time is 7.0 seconds, and the thickness of the phosphor-containing resin thin film portion 30a (that is, The thickness of the gap 100) L was set to 200 μm.

  After the compression molding is completed, heating and pressure application are stopped, the substrate holding unit 110 is raised by the lifting mechanism of the molding device, and the temporarily cured phosphor-containing resin 30 is peeled from the mold 120 together with the release film. Thereafter, the substrate 10 to which the phosphor-containing resin 30 is bonded is carried into, for example, a constant temperature bath at 150 ° C., and heat treatment is performed for 4 hours, so that the phosphor-containing resin 30 is fully cured. Then, the board | substrate 10 is divided | segmented for every arbitrary structural units as needed. For example, the light emitting device may be configured by a single LED chip, or may be configured by two or more LED chips arranged in a line or grid.

  6A is a plan view showing the configuration of the semiconductor light emitting device 1 according to the embodiment of the present invention manufactured through the above steps, and FIG. 6B is a line 6b-6b in FIG. 6A. FIG. 6C is an enlarged view of a portion surrounded by a broken line in FIG. 6B. In the semiconductor light emitting device 1, each of the plurality of LED chips 20 mounted on the substrate 10 is sealed with a phosphor-containing resin 30 formed in a hemispherical shape. The phosphor-containing resin 30 functions as a light distribution control lens. At the time of compression molding, the phosphor-containing resin thin film portion 30 a formed by filling the gap 100 between the element mounting surface a of the substrate 10 and the reference surface b of the mold 120 with the phosphor-containing resin is the substrate 10. It covers the top. The thickness L of the thin film portion 30a is smaller than the distance t from the element mounting surface a of the substrate 10 to the upper surface of the LED chip 200 (L <t). In other words, the upper surface of the thin film portion 30 a is located behind the LED chip 20 in the light projecting direction. Here, FIG. 6D is a cross-sectional view showing the configuration of the semiconductor light emitting device according to the comparative example in which the upper surface of the thin film portion 30a is located in front of the LED chip 20 in the light projecting direction (that is, L> t). FIG. When the upper surface of the thin film portion 30a is positioned forward of the LED chip 20 in the light projecting direction, the light emitted from the LED chip 20 is totally reflected by the upper surface of the flat thin film portion 30a, and the light extraction efficiency is improved. descend. On the other hand, according to the semiconductor light emitting device 1 according to the embodiment of the present invention shown in FIG. 6C, it is possible to prevent total reflection on the upper surface of the thin film portion 30a, and to prevent a decrease in light extraction efficiency. it can. In FIG. 6B and FIG. 6C, the path of the light emitted from the LED chip 20 is indicated by a broken-line arrow. The thickness of the thin film portion 30a corresponds to the thickness of the gap 100 at the time of compression molding, and can be controlled by the application amount (supply amount) of the phosphor-containing resin 30.

  FIG. 7 shows phosphor particles 32 having a width of the gap 100 (thickness L of the phosphor-containing resin thin film portion 30a) between the element mounting surface a of the substrate 10 and the reference surface b of the mold 120 at the time of compression molding. It is the result of having evaluated the color temperature difference of the luminescent color in the light emission surface about three types of samples from which the magnification with respect to the particle size of each differs. Each sample is manufactured by mounting 15 LEDs in a row at a pitch of 0.9 mm on a substrate and compression-molding a phosphor-containing resin that seals each LED chip.

  Sample A is compression molded by setting the width L of the gap 100 between the element mounting surface a of the substrate and the reference surface b of the mold to 3 times the particle size of the phosphor particles. Sample B is compression molded with the width L of the gap 100 set to 13 times the particle size of the phosphor particles. Sample C is compression molded by setting the width L of the gap 100 to 15 times the particle size of the phosphor particles, and corresponds to the light emitting device according to the embodiment of the present invention. In each sample, the color temperature at each position along the direction in which the plurality of LED chips are arranged was measured, and the result was plotted on the graph shown in FIG. In FIG. 7, the horizontal axis indicates the position on the light emitting surface along the direction in which the LED chips of the samples are arranged, and the vertical axis indicates the difference between the color temperature at that position and the color temperature at the center of the light emitting surface. In sample A, the color temperature at the end of the light emitting surface was high, and the color temperature was low in the region between the end of the light emitting surface and the center of the light emitting surface. This means that the density distribution of the phosphor particles is uneven in the phosphor-containing resin. In sample B, although the color temperature difference in the light emitting surface tends to be reduced, the emission color is still uneven. In sample C, the color temperature difference at each position on the light emitting surface was within approximately 200K, and it was confirmed that the level was sufficiently acceptable in actual use. That is, it was confirmed that the uneven density distribution of the phosphor particles was eliminated by setting the width L of the gap 100 to 15 times or more the particle diameter of the phosphor particles. In addition, although the result shown in FIG. 7 shows the case where the phosphor particles having an average particle diameter of 10.7 μm are used, the phosphor particles having the average particle diameter of 8.0 μm are used. Even in this case, by setting the width L of the gap 100 to 15 times or more the particle size of the phosphor particles, the color temperature difference at each position on the light emitting surface could be within ± 200K.

  In addition, the present inventors have examined various measures for controlling the fluidity of the phosphor-containing resin in the process of searching for a technique for preventing the retention of phosphor particles in compression molding. FIG. 8 shows the contents and effects.

Strategy 1 is that to improve the fluidity of the phosphor-containing resin by changing the molding pressure at the time of compression molding from 30 kgf / cm ^2, which is the default value to 15 kgf / cm ^2. However, in this measure 1, it was not possible to eliminate the uneven density distribution of the phosphor particles, that is, the unevenness of the emitted color (color temperature difference) in the light emitting surface.

  Measure 2 is to reduce the fluidity of the phosphor-containing resin by changing the vacuum holding time during compression molding from the default value of 7 seconds to 3 seconds. However, in this measure 2, it was not possible to eliminate the uneven density distribution of the phosphor particles, that is, the unevenness of the emitted color (color temperature difference) in the light emitting surface.

  Measure 3 is to reduce the fluidity of the phosphor-containing resin by changing the mold pressing speed during compression molding from the default value of 1.0 mm / s to 0.5 mm / s. However, in this measure 3, it was not possible to eliminate the uneven density distribution of the phosphor particles, that is, uneven emission color (color temperature difference) in the light emitting surface.

  Measure 4 is to improve the fluidity of the phosphor-containing resin by changing the mold temperature (that is, the molding temperature) during compression molding from the prescribed value of 115 ° C. to 105 ° C. However, in this Measure 4, the uneven density distribution of the phosphor particles, that is, the uneven emission color (color temperature difference) in the light emitting surface cannot be eliminated.

  In Measure 5, the application position and the application shape of the phosphor-containing resin on the mold are changed as shown in FIGS. That is, the mode of spreading of the phosphor-containing resin on the mold is changed by changing the phosphor-containing resin from the predetermined one-point coating to multi-point coating, line coating, and wave coating. . Although the density distribution of the phosphor particles changed depending on the application position and application shape, and there was a change in the position where the uneven emission color occurred, the uneven emission color (color temperature difference) itself could not be resolved. .

  Measure 6 is to change the fluidity of the phosphor-containing resin by using the phosphor-containing resin whose viscosity is 0.1 to 2 times the predetermined value. When a resin having a low viscosity is used, the color temperature difference in the light emitting surface is reduced, but the actual practical use level is not reached.

  Measure 7 is to increase the flow path of the phosphor-containing resin by increasing the width L of the gap between the element mounting surface of the substrate and the reference surface of the mold during compression molding. The width L of the gap was controlled by the amount of phosphor-containing resin applied. By making the width L of the gap 15 or more times the average particle diameter of the phosphor particles, the uneven density distribution of the phosphor particles is eliminated, and the color temperature difference in the light emitting surface is kept within approximately plus or minus 200K. .

  Thus, various measures for changing the fluidity of the phosphor-containing resin have been tried. As a result, the only way to prevent the uneven density distribution of the phosphor particles is to determine the thickness of the phosphor-containing resin layer interposed between the substrate and the mold during compression molding. A method of controlling according to the diameter was found. According to this method, regardless of the parameters (viscosity of phosphor-containing resin, molding pressure, etc.) studied in measures 1 to 6, phosphor particles are prevented from staying and color unevenness in the light emitting surface is suppressed. The effect was confirmed.

  As is apparent from the above description, in the method for manufacturing a semiconductor light emitting device according to the embodiment of the present invention, the phosphor-containing resin 30 is interposed between the element mounting surface of the substrate 10 and the reference surface of the mold 120 during compression molding. A gap 100 having a width L is formed as a flow path. The width L of the gap 100 is set to 15 times or more the average particle diameter of the phosphor particles contained in the phosphor-containing resin 30. Thereby, the fluidity | liquidity of the fluorescent substance containing resin 30 interposed between the metal mold | die 120 and the board | substrate 10 at the time of compression molding improves. As a result, the phosphor particles can move in the resin without causing stagnation, and the uneven density distribution of the phosphor particles is eliminated. Therefore, in the semiconductor light emitting device 1 in which a plurality of LED chips are mounted on the substrate, it is possible to reduce unevenness of the emitted color (color temperature difference) in the light emitting surface. In addition, in a light emitting device manufactured by dividing the substrate 10 into LED chips, it is possible to prevent variations in emission color among the light emitting devices, and the yield is improved.

DESCRIPTION OF SYMBOLS 10 Substrate 20 LED chip 30 Phosphor-containing resin 32 Phosphor particle 100 Gap 120 Mold 122 Cavity

Claims (5)

Mounting a plurality of light emitting elements on the element mounting surface of the substrate;
Supplying a phosphor-containing resin containing phosphor particles having an average particle diameter of 5 μm or more to a mold having a plurality of cavities arranged corresponding to the arrangement of the plurality of light emitting elements on the substrate on a reference surface; ,
Compression-molding the phosphor-containing resin in a state where each of the light emitting elements is housed in each of the cavities and the element mounting surface and the reference surface are in close contact with the phosphor-containing resin interposed therebetween; Including
In the compression molding step, the thickness of the phosphor-containing resin interposed between the element mounting surface and the reference surface is 15 times or more the average particle diameter of the phosphor particles. Device manufacturing method.   In the compression molding step, the thickness of the phosphor-containing resin interposed between the element mounting surface and the reference surface is smaller than the distance from the element mounting surface to the upper surface of the light emitting element. The manufacturing method according to claim 1.   2. The thickness of the phosphor-containing resin interposed between the element mounting surface and the reference surface in the compression molding step is controlled by a supply amount of the phosphor-containing resin. The manufacturing method as described in.   The method according to claim 1, further comprising a step of dividing the substrate after the compression molding step.   The phosphor-containing resin is supplied to a part of the plurality of cavities, is supplied to each of the plurality of cavities by contact with the substrate in the compression molding step, and spreads on the element mounting surface. The manufacturing method according to any one of claims 1 to 4, wherein the manufacturing method is characterized.

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