KR101640082B1 - 다계조 포토마스크의 제조 방법, 다계조 포토마스크 및 표시 장치의 제조 방법 - Google Patents

다계조 포토마스크의 제조 방법, 다계조 포토마스크 및 표시 장치의 제조 방법 Download PDF

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KR101640082B1
KR101640082B1 KR1020140094104A KR20140094104A KR101640082B1 KR 101640082 B1 KR101640082 B1 KR 101640082B1 KR 1020140094104 A KR1020140094104 A KR 1020140094104A KR 20140094104 A KR20140094104 A KR 20140094104A KR 101640082 B1 KR101640082 B1 KR 101640082B1
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light
film
etching
shielding
semitransparent
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KR20150126263A (ko
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태 훈 김
성 진 김
석 훈 이
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
KR1020140094104A 2014-05-01 2014-07-24 다계조 포토마스크의 제조 방법, 다계조 포토마스크 및 표시 장치의 제조 방법 Active KR101640082B1 (ko)

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JPJP-P-2014-094482 2014-05-01
JP2014094482A JP2015212720A (ja) 2014-05-01 2014-05-01 多階調フォトマスクの製造方法、多階調フォトマスク及び表示装置の製造方法

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KR1020160087056A Division KR101869598B1 (ko) 2014-05-01 2016-07-08 다계조 포토마스크의 제조 방법, 다계조 포토마스크 및 표시 장치의 제조 방법

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KR20150126263A KR20150126263A (ko) 2015-11-11
KR101640082B1 true KR101640082B1 (ko) 2016-07-18

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KR1020140094104A Active KR101640082B1 (ko) 2014-05-01 2014-07-24 다계조 포토마스크의 제조 방법, 다계조 포토마스크 및 표시 장치의 제조 방법
KR1020160087056A Active KR101869598B1 (ko) 2014-05-01 2016-07-08 다계조 포토마스크의 제조 방법, 다계조 포토마스크 및 표시 장치의 제조 방법

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JP (1) JP2015212720A (enExample)
KR (2) KR101640082B1 (enExample)
CN (1) CN105022223A (enExample)
TW (2) TWI617876B (enExample)

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* Cited by examiner, † Cited by third party
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JP6514143B2 (ja) * 2016-05-18 2019-05-15 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
JP6573591B2 (ja) * 2016-09-13 2019-09-11 Hoya株式会社 フォトマスクの製造方法、フォトマスク、及び表示装置の製造方法
TW201823855A (zh) * 2016-09-21 2018-07-01 日商Ｈｏｙａ股份有限公司 光罩之製造方法、光罩、及顯示裝置之製造方法
JP6259508B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
JP6368000B1 (ja) * 2017-04-04 2018-08-01 株式会社エスケーエレクトロニクス フォトマスク及びフォトマスクブランクス並びにフォトマスクの製造方法
CN108196421B (zh) * 2017-12-14 2021-03-05 深圳市路维光电股份有限公司 灰阶掩膜版制作方法
CN111367142A (zh) * 2018-12-26 2020-07-03 聚灿光电科技（宿迁）有限公司 一种包含不同透光性的新型光学掩膜版
JP7724048B1 (ja) * 2024-07-24 2025-08-15 株式会社エスケーエレクトロニクス フォトマスクの製造方法及びフォトマスク

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JP2008116517A (ja) 2006-11-01 2008-05-22 Sk Electronics:Kk 中間調フォトマスク及びその製造方法
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
KR101364286B1 (ko) * 2012-05-02 2014-02-18 호야 가부시키가이샤 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법

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JPH06188270A (ja) * 1992-12-15 1994-07-08 Mitsubishi Electric Corp 電界効果トランジスタの製造方法及びパターン転写マスク
JPH0798493A (ja) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd 位相シフトマスク及びその製造方法
JP4780264B2 (ja) * 2001-05-16 2011-09-28 信越化学工業株式会社 クロム系フォトマスクの形成方法
JP4521694B2 (ja) 2004-03-09 2010-08-11 Ｈｏｙａ株式会社 グレートーンマスク及び薄膜トランジスタの製造方法
JP4468093B2 (ja) * 2004-07-01 2010-05-26 大日本印刷株式会社 階調フォトマスクの製造方法
JP2006030320A (ja) * 2004-07-12 2006-02-02 Hoya Corp グレートーンマスク及びグレートーンマスクの製造方法
JP4587837B2 (ja) * 2005-02-18 2010-11-24 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及びグレートーンマスク
JP4919220B2 (ja) * 2005-02-28 2012-04-18 Ｈｏｙａ株式会社 グレートーンマスク
JP4693451B2 (ja) * 2005-03-22 2011-06-01 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
DE602006021102D1 (de) * 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP4968709B2 (ja) * 2006-03-17 2012-07-04 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
JP2009080421A (ja) * 2007-09-27 2009-04-16 Hoya Corp マスクブランク、及びインプリント用モールドの製造方法
JP2009237491A (ja) * 2008-03-28 2009-10-15 Hoya Corp フォトマスクの欠陥修正方法及びフォトマスクの製造方法、並びにパターン転写方法
JP5215019B2 (ja) * 2008-03-28 2013-06-19 Ｈｏｙａ株式会社 多階調フォトマスク及びその製造方法、並びにパターン転写方法
JP2011159875A (ja) * 2010-02-02 2011-08-18 Hitachi Cable Ltd 半導体装置用テープキャリアの製造方法
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP5739375B2 (ja) * 2012-05-16 2015-06-24 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスクの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008116517A (ja) 2006-11-01 2008-05-22 Sk Electronics:Kk 中間調フォトマスク及びその製造方法
JP2011186506A (ja) * 2011-07-01 2011-09-22 Sk Electronics:Kk 中間調フォトマスク
KR101364286B1 (ko) * 2012-05-02 2014-02-18 호야 가부시키가이샤 포토 마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법

Also Published As

Publication number Publication date
CN105022223A (zh) 2015-11-04
TWI617876B (zh) 2018-03-11
TW201543136A (zh) 2015-11-16
TW201643541A (zh) 2016-12-16
KR20160085741A (ko) 2016-07-18
KR101869598B1 (ko) 2018-06-20
KR20150126263A (ko) 2015-11-11
JP2015212720A (ja) 2015-11-26
TWI530753B (zh) 2016-04-21

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