KR101626012B1 - 방사선 소스, 리소그래피 장치 및 디바이스 제조방법 - Google Patents

방사선 소스, 리소그래피 장치 및 디바이스 제조방법 Download PDF

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KR101626012B1
KR101626012B1 KR1020117005827A KR20117005827A KR101626012B1 KR 101626012 B1 KR101626012 B1 KR 101626012B1 KR 1020117005827 A KR1020117005827 A KR 1020117005827A KR 20117005827 A KR20117005827 A KR 20117005827A KR 101626012 B1 KR101626012 B1 KR 101626012B1
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radiation
lithographic apparatus
filter
substrate
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KR20110058810A (ko
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안토니우스 켐펜
바딤 바니네
블라디미르 이바노프
에릭 루프스트라
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에이에스엠엘 네델란즈 비.브이.
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041Photolithographic processes
    • H10P76/2042Photolithographic processes using lasers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983Optical system protection, e.g. pellicles or removable covers for protection of mask
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KHANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating

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  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
KR1020117005827A 2008-08-14 2009-07-13 방사선 소스, 리소그래피 장치 및 디바이스 제조방법 Active KR101626012B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US13613008P 2008-08-14 2008-08-14
US13612908P 2008-08-14 2008-08-14
US61/136,129 2008-08-14
US61/136,130 2008-08-14
US19337308P 2008-11-21 2008-11-21
US61/193,373 2008-11-21

Publications (2)

Publication Number Publication Date
KR20110058810A KR20110058810A (ko) 2011-06-01
KR101626012B1 true KR101626012B1 (ko) 2016-05-31

Family

ID=41110410

Family Applications (1)

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KR1020117005827A Active KR101626012B1 (ko) 2008-08-14 2009-07-13 방사선 소스, 리소그래피 장치 및 디바이스 제조방법

Country Status (6)

Country Link
US (1) US8685632B2 (https=)
JP (1) JP5732393B2 (https=)
KR (1) KR101626012B1 (https=)
CN (1) CN102119366B (https=)
NL (1) NL2003152A1 (https=)
WO (1) WO2010018039A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587768B2 (en) * 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
DE102010038697B4 (de) * 2010-07-30 2012-07-19 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Qualifizierung einer Optik einer Projektionsbelichtungsanlage für die Mikrolithographie
JP2014508414A (ja) * 2011-03-04 2014-04-03 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法
WO2012125647A2 (en) * 2011-03-16 2012-09-20 Kla-Tencor Corporation Euv actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating
WO2013020758A1 (en) * 2011-08-05 2013-02-14 Asml Netherlands B.V. Radiation source and method for lithographic apparatus and device manufacturing method
JP6280116B2 (ja) * 2012-08-03 2018-02-14 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置および方法
EP3257054B1 (en) * 2015-02-10 2019-10-16 Carl Zeiss SMT GmbH Euv multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror
KR102928098B1 (ko) * 2019-10-15 2026-02-13 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
JP6919699B2 (ja) 2019-11-28 2021-08-18 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
WO2021221123A1 (ja) 2020-04-30 2021-11-04 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7421411B2 (ja) 2020-04-30 2024-01-24 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7525354B2 (ja) 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7538050B2 (ja) 2021-01-08 2024-08-21 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7614949B2 (ja) 2021-06-02 2025-01-16 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
DE102022212168A1 (de) 2022-11-16 2024-05-16 Carl Zeiss Smt Gmbh EUV-Optik-Modul für eine EUV-Projektionsbelichtungsanlage

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008002134A2 (en) 2006-06-30 2008-01-03 Asml Netherlands B.V. Arrangement for cleaning a surface in a lithographic apparatus
WO2008061690A1 (de) 2006-11-21 2008-05-29 Carl Zeiss Smt Ag Verfahren zum entfernen von kontaminationen auf optischen oberflächen und optische anordnung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8094288B2 (en) * 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7732789B2 (en) * 2004-07-22 2010-06-08 Koninklijke Philips Electronics N.V. Optical system having a cleaning arrangement
US7453645B2 (en) * 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US7473908B2 (en) 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
NL2004787A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008002134A2 (en) 2006-06-30 2008-01-03 Asml Netherlands B.V. Arrangement for cleaning a surface in a lithographic apparatus
WO2008061690A1 (de) 2006-11-21 2008-05-29 Carl Zeiss Smt Ag Verfahren zum entfernen von kontaminationen auf optischen oberflächen und optische anordnung

Also Published As

Publication number Publication date
JP5732393B2 (ja) 2015-06-10
JP2011530823A (ja) 2011-12-22
US20110143288A1 (en) 2011-06-16
CN102119366A (zh) 2011-07-06
KR20110058810A (ko) 2011-06-01
NL2003152A1 (nl) 2010-02-16
WO2010018039A1 (en) 2010-02-18
CN102119366B (zh) 2015-04-22
US8685632B2 (en) 2014-04-01

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