JP5732393B2 - リソグラフィ装置、およびデバイス製造方法 - Google Patents

リソグラフィ装置、およびデバイス製造方法 Download PDF

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Publication number
JP5732393B2
JP5732393B2 JP2011522453A JP2011522453A JP5732393B2 JP 5732393 B2 JP5732393 B2 JP 5732393B2 JP 2011522453 A JP2011522453 A JP 2011522453A JP 2011522453 A JP2011522453 A JP 2011522453A JP 5732393 B2 JP5732393 B2 JP 5732393B2
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Japan
Prior art keywords
radiation
lithographic apparatus
substrate
hydrogen
projection system
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JP2011522453A
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English (en)
Japanese (ja)
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JP2011530823A5 (https=
JP2011530823A (ja
Inventor
ケンペン，アントニウス
バニエ，バディム
イワノフ，ウラジミール
ループストラ，エリック
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ASML Netherlands BV
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ASML Netherlands BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating

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  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
JP2011522453A 2008-08-14 2009-07-13 リソグラフィ装置、およびデバイス製造方法 Active JP5732393B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US13613008P 2008-08-14 2008-08-14
US13612908P 2008-08-14 2008-08-14
US61/136,129 2008-08-14
US61/136,130 2008-08-14
US19337308P 2008-11-21 2008-11-21
US61/193,373 2008-11-21
PCT/EP2009/058898 WO2010018039A1 (en) 2008-08-14 2009-07-13 Radiation source, lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2011530823A JP2011530823A (ja) 2011-12-22
JP2011530823A5 JP2011530823A5 (https=) 2012-08-30
JP5732393B2 true JP5732393B2 (ja) 2015-06-10

Family

ID=41110410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011522453A Active JP5732393B2 (ja) 2008-08-14 2009-07-13 リソグラフィ装置、およびデバイス製造方法

Country Status (6)

Country Link
US (1) US8685632B2 (https=)
JP (1) JP5732393B2 (https=)
KR (1) KR101626012B1 (https=)
CN (1) CN102119366B (https=)
NL (1) NL2003152A1 (https=)
WO (1) WO2010018039A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587768B2 (en) * 2010-04-05 2013-11-19 Media Lario S.R.L. EUV collector system with enhanced EUV radiation collection
DE102010038697B4 (de) * 2010-07-30 2012-07-19 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Qualifizierung einer Optik einer Projektionsbelichtungsanlage für die Mikrolithographie
JP2014508414A (ja) * 2011-03-04 2014-04-03 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、スペクトル純度フィルタおよびデバイス製造方法
WO2012125647A2 (en) * 2011-03-16 2012-09-20 Kla-Tencor Corporation Euv actinic reticle inspection system using imaging sensor with thin film spectral purity filter coating
WO2013020758A1 (en) * 2011-08-05 2013-02-14 Asml Netherlands B.V. Radiation source and method for lithographic apparatus and device manufacturing method
JP6280116B2 (ja) * 2012-08-03 2018-02-14 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
EP3257054B1 (en) * 2015-02-10 2019-10-16 Carl Zeiss SMT GmbH Euv multilayer mirror, optical system including a multilayer mirror and method of manufacturing a multilayer mirror
KR102928098B1 (ko) * 2019-10-15 2026-02-13 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조 방법
JP6919699B2 (ja) 2019-11-28 2021-08-18 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
WO2021221123A1 (ja) 2020-04-30 2021-11-04 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP7421411B2 (ja) 2020-04-30 2024-01-24 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7525354B2 (ja) 2020-09-28 2024-07-30 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7538050B2 (ja) 2021-01-08 2024-08-21 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JP7614949B2 (ja) 2021-06-02 2025-01-16 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
DE102022212168A1 (de) 2022-11-16 2024-05-16 Carl Zeiss Smt Gmbh EUV-Optik-Modul für eine EUV-Projektionsbelichtungsanlage

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG139554A1 (en) * 2002-12-20 2008-02-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
TWI264620B (en) * 2003-03-07 2006-10-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8094288B2 (en) * 2004-05-11 2012-01-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7732789B2 (en) * 2004-07-22 2010-06-08 Koninklijke Philips Electronics N.V. Optical system having a cleaning arrangement
US7453645B2 (en) * 2004-12-30 2008-11-18 Asml Netherlands B.V. Spectral purity filter, lithographic apparatus including such a spectral purity filter, device manufacturing method, and device manufactured thereby
US7518128B2 (en) 2006-06-30 2009-04-14 Asml Netherlands B.V. Lithographic apparatus comprising a cleaning arrangement, cleaning arrangement and method for cleaning a surface to be cleaned
US7473908B2 (en) 2006-07-14 2009-01-06 Asml Netherlands B.V. Getter and cleaning arrangement for a lithographic apparatus and method for cleaning a surface
DE102006054726B4 (de) * 2006-11-21 2014-09-11 Asml Netherlands B.V. Verfahren zum Entfernen von Kontaminationen auf optischen Oberflächen und optische Anordnung
NL2004787A (en) * 2009-06-30 2011-01-04 Asml Netherlands Bv Spectral purity filter, lithographic apparatus, and method for manufacturing a spectral purity filter.

Also Published As

Publication number Publication date
KR101626012B1 (ko) 2016-05-31
JP2011530823A (ja) 2011-12-22
US20110143288A1 (en) 2011-06-16
CN102119366A (zh) 2011-07-06
KR20110058810A (ko) 2011-06-01
NL2003152A1 (nl) 2010-02-16
WO2010018039A1 (en) 2010-02-18
CN102119366B (zh) 2015-04-22
US8685632B2 (en) 2014-04-01

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