KR101592136B1 - 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 - Google Patents

결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 Download PDF

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KR101592136B1
KR101592136B1 KR1020147033292A KR20147033292A KR101592136B1 KR 101592136 B1 KR101592136 B1 KR 101592136B1 KR 1020147033292 A KR1020147033292 A KR 1020147033292A KR 20147033292 A KR20147033292 A KR 20147033292A KR 101592136 B1 KR101592136 B1 KR 101592136B1
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South Korea
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optical system
mirror
mirrors
imaging
imaging optical
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Korean (ko)
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KR20150006019A (ko
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한스-위르겐 만
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칼 짜이스 에스엠티 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0652—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors on-axis systems with at least one of the mirrors having a central aperture
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020147033292A 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 Active KR101592136B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98278507P 2007-10-26 2007-10-26
DE102007051670.5 2007-10-26
DE102007051670 2007-10-26
US60/982,785 2007-10-26
PCT/EP2008/008381 WO2009052932A1 (en) 2007-10-26 2008-10-02 Imaging optical system and projection exposure installation for micro-lithography with an imaging optical system of this type

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020107010512A Division KR101515663B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치

Publications (2)

Publication Number Publication Date
KR20150006019A KR20150006019A (ko) 2015-01-15
KR101592136B1 true KR101592136B1 (ko) 2016-02-04

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KR1020147033292A Active KR101592136B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치
KR1020107010512A Active KR101515663B1 (ko) 2007-10-26 2008-10-02 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치

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Country Status (8)

Country Link
US (3) US8576376B2 (https=)
EP (2) EP2203787B1 (https=)
JP (1) JP5337159B2 (https=)
KR (2) KR101592136B1 (https=)
CN (2) CN101836164B (https=)
DE (1) DE102008042917A1 (https=)
TW (1) TWI391704B (https=)
WO (1) WO2009052932A1 (https=)

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Also Published As

Publication number Publication date
CN101836164A (zh) 2010-09-15
TW200921145A (en) 2009-05-16
JP5337159B2 (ja) 2013-11-06
US20160004165A1 (en) 2016-01-07
WO2009052932A1 (en) 2009-04-30
EP2203787A1 (en) 2010-07-07
EP2533104B1 (en) 2016-05-11
EP2203787B1 (en) 2014-05-14
DE102008042917A1 (de) 2009-04-30
CN102819197A (zh) 2012-12-12
CN102819197B (zh) 2016-06-22
TWI391704B (zh) 2013-04-01
US20100231885A1 (en) 2010-09-16
JP2011502347A (ja) 2011-01-20
KR101515663B1 (ko) 2015-04-27
US20140036246A1 (en) 2014-02-06
CN101836164B (zh) 2013-03-13
US9152056B2 (en) 2015-10-06
US8576376B2 (en) 2013-11-05
KR20150006019A (ko) 2015-01-15
KR20100102586A (ko) 2010-09-24
EP2533104A1 (en) 2012-12-12

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