KR101570429B1 - Coating method for matal mask and matal mask manufactured by the same - Google Patents

Coating method for matal mask and matal mask manufactured by the same Download PDF

Info

Publication number
KR101570429B1
KR101570429B1 KR1020150050664A KR20150050664A KR101570429B1 KR 101570429 B1 KR101570429 B1 KR 101570429B1 KR 1020150050664 A KR1020150050664 A KR 1020150050664A KR 20150050664 A KR20150050664 A KR 20150050664A KR 101570429 B1 KR101570429 B1 KR 101570429B1
Authority
KR
South Korea
Prior art keywords
deposition
metal mask
target portion
target
delete delete
Prior art date
Application number
KR1020150050664A
Other languages
Korean (ko)
Inventor
강철구
김종호
전기택
Original Assignee
전기택
김종호
강철구
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 전기택, 김종호, 강철구 filed Critical 전기택
Priority to KR1020150050664A priority Critical patent/KR101570429B1/en
Application granted granted Critical
Publication of KR101570429B1 publication Critical patent/KR101570429B1/en

Links

Images

Classifications

    • H01L51/5253—
    • H01L51/56—
    • H01L2251/56—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention provides a method of manufacturing a semiconductor device, comprising: a deposition preparation step in which a metal mask in which a transmission portion and a blocking portion are alternately formed in a chamber formed in a vacuum state is located; And depositing a target material on the metal mask so as to form a protective layer surrounding at least one of the blocking portions, wherein the target material is deposited on the rim of the blocking portion such that the target material protrudes from the central portion of the blocking portion by a predetermined height, A mask coating method is provided.
Therefore, it is possible to prevent damage to the metal mask in the chemical vapor deposition process of the organic light emitting diode by forming the surface protection layer on the metal mask.

Description

METHOD FOR COATING MASK MASK AND METAL MASK COATED BY THE METHOD

The technical idea of the present invention relates to a metal mask coating method and a metal mask coated thereby.

Organic light emitting diodes have advantages such as complete video implementation with fast response speed, low power consumption, light weight thinness and wide viewing angle. Therefore, it is expressed as a modifier such as a next-generation display or a dream display. Due to such growing demand and interest, organic light emitting diodes (OLEDs) are less mass-producible than LCDs, and the process is not stabilized, which is an obstacle to commercialization. Organic light emitting diodes are patterned by using deposition equipment in manufacturing. In general, it is impossible to use a general photo process, and the organic layer must be patterned by aligning a sophisticated metal mask with a substrate. In performing such deposition, a method of forming a metal thin film by applying heat to a gas source in a gaseous state and a gas reacting with the gas source, or forming a highly reactive radical by plasma, and causing a chemical reaction at a substrate at a high temperature Chemical vapor deposition is mainly used. In this case, when the deposition is performed by the chemical vapor deposition method, since the thermal electric field, the light, and the gas are used as the energy in the process, the surface of the metal mask made of the metal material is oxidized and fatal damage is caused.

In addition, foreign substances generated from the surface of the damaged metal mask are separated from the mask surface and travel around the inside of the vacuum chamber. Such a foreign matter flows into a pattern formed on a substrate, which is a major cause of defects.

In addition, the precision-patterned metal mask is aligned with the pattern on the glass substrate while maintaining the accuracy of several micrometers. Radiant heat caused by the heat source in the process causes deformation of the metal mask, There is a problem.

On the other hand, in the cleaning of the metal mask, a conventional wet cleaning method and a recently developed dry cleaning method using plasma are mainly used. In the wet cleaning method, since the metal mask in the vacuum chamber is exposed to the outside, the vacuum atmosphere is broken, and many foreign particles adhere to the exposed surface of the metal mask. In the case of the dry cleaning method, a plasma method is frequently used, and the surface of the metal mask is made of a thin metal plate and can not withstand the heat of the plasma, so that the surface is damaged and foreign matter is generated. These foreign materials have a problem of generating arching, corrosion, and particles against the pattern and the metal mask.

In addition, in the case of a conventional metal mask having a coating treatment, it is not possible to effectively prevent the occurrence of sagging of the metal mask. In such a state, coating is performed to form an unstable coating film, , There is a problem that the alignment is distorted when patterning with the substrate.

Korean Patent Publication No. 10-2014-0061899

It is an object of the present invention to provide a metal mask coating method in which a surface protection layer is formed on a metal mask to minimize damage to the metal mask in the CVD process of the organic light emitting diode, and a metal mask coated by the method.

The present invention also provides a metal mask coating method capable of preventing foreign substances generated on the surface of a damaged metal mask from falling off the mask surface and traveling around the inside of the vacuum chamber and flowing into a pattern formed on the substrate, .

Further, in the state where the precision-patterned metal mask is aligned with the pattern on the substrate while maintaining the accuracy of several micrometers, the metal mask is deformed due to radiation heat caused by the heat source in the process, And to provide a metal mask coated by the method.

It is another object of the present invention to provide a metal mask coating method and a metal mask coated thereon which prevent wetting and dry cleaning of a metal mask and foreign matter generated therefrom and arcing and corrosion caused thereby.

It is another object of the present invention to provide a metal mask coating method capable of appropriately coating a shape of an inner wall of a side surface of a metal mask and separately processing an inner wall of the side surface, and a metal mask coated by the method.

The present invention provides a method of manufacturing a semiconductor device, comprising: a deposition preparation step of placing an object in which a transmission portion and a blocking portion are alternately formed in a chamber formed in a vacuum state; And a deposition step of depositing a target material on an object to form a protective layer surrounding the shielding part and depositing a target material on the edge of the shielding part such that the target material protrudes from the central part of the shielding part by a predetermined height.

In addition, the deposition preparation step may include an object applying step in which an object is charged into the chamber from the outside through an auxiliary chamber in which a vacuum state and an atmospheric pressure state are selectively formed.

In addition, the deposition performing step may include a plurality of target portions provided in the plurality of regions in the chamber and each of which includes a target material selectively operates on the object via the plurality of regions, Deposition can be performed.

Further, the deposition performing step may include a first deposition target portion provided in a first region of a plurality of target portions and a first deposition performing step performing deposition on an object via the first target portion, ; And a second deposition step of performing deposition on an object via the second-1 target portion and the second-2 target portion provided in the second region of the plurality of the target portions.

The 1-1 target portion and the 2-1 target portion may be fixed, and the 1-2 target portion and the 2-2 target portion may be provided in a tiltable form.

In addition, the performing of the deposition may include performing a third deposition step of performing deposition on an object passing through the second zone so that the second-1 target portion and the second-third target portion provided in the second zone face the first zone ; And a fourth deposition performing step of performing deposition on the object via the first zone and the 1-1 target part and the 1-3 second target part provided in the first zone.

Also, the 1-3 target portion and the 2-3 target portion may be provided in a tiltable form.

Further, the fifth deposition performing step to the eighth deposition performing step corresponding to each of the first deposition performing step to the fourth deposition performing step may be performed on the lower side of the object.

In addition, the first deposition performing step to the fourth deposition performing step or the fifth deposition performing step to the eighth deposition performing step may be sequentially and repeatedly performed to deposit the target material to a predetermined thickness.

In addition, the first to fourth deposition performing steps may be performed so as to have a mutual execution ratio of 4: 1 with the fifth deposition performing step to the eighth deposition performing step.

In addition, performing the deposition may further include: performing a first reinforcement deposition step in which the first-second target portion performs the deposition on an object via the first region; And a second reinforcing deposition performing step in which the second-2 target portion performs deposition on an object via the second region.

In addition, performing the deposition may further include performing a third reinforcement deposition step of performing the deposition on an object passing through the second zone so that the second to third target portion faces the first zone; And the fourth reinforcing deposition performing step in which the first to third target portions perform the deposition on the object via the first region.

In addition, a coated metal mask can be provided by any of the methods described above.

 The metal mask may include a metal thin plate subjected to tension annealing for maintaining flatness.

Further, the thickness of the metal mask may be 0.05 to 0.25 mm.

Further, the surface roughness of the metal mask is 1.0 to 1.6 mu m.

The target material may be formed to have a height of 4 to 6 占 퐉 on the rim of at least one of the both surfaces of the blocking portion and the target material may be formed to have a height of 2 占 퐉 to 4 占 퐉 at the center of at least one of both surfaces of the blocking portion .

A depression may be formed in the rim of the transmitting portion.

Further, the side end portion of the metal mask may be formed to taper at a set angle.

The side end portion of the metal mask may be formed such that at least one of the upper side of the side end portion and the lower side of the side end portion has a set angle of 40 to 120 with reference to the ground.

Further, the side end of the metal mask may be formed so that the lower side of the side end has a set angle of 48 degrees, and the metal mask is rounded inward at 2/3 point from the lower surface and 1/3 from the upper surface, respectively.

Further, the side end of the metal mask may be formed so that the lower side of the side end has a set angle of 74 degrees, and is rounded toward the inside at 1/3 point from the lower surface and 2/3 from the upper surface, respectively.

The side end of the metal mask is formed so as to form an angle of any one of 51 °, 53 °, 55 °, 59 °, 68 °, and 73 ° with respect to the paper surface, As shown in Fig.

The side end of the metal mask may be formed so as to have a slope of 73 ° or 85 ° with respect to the paper surface, and may be rounded toward the inside at a half point from the bottom.

The metal mask coating apparatus and the coating method using the same according to the present invention have the following effects.

First, a surface protection layer may be formed on the metal mask to prevent damage to the metal mask in the chemical vapor deposition process of the organic light emitting diode.

Secondly, foreign matter generated from the surface of the damaged metal mask can be separated from the mask surface, travel around the inside of the vacuum chamber, and can be prevented from flowing into the pattern formed on the substrate.

Thirdly, in the state that the precision-patterned metal mask is aligned with the pattern on the substrate while maintaining the accuracy of several micrometers, the metal mask is deformed due to radiant heat generated by the heat source in the process, Can be prevented from being turned off.

Fourth, it is possible to prevent occurrence of arcing and corrosion due to foreign substances generated in the wet cleaning and dry cleaning of the metal mask.

Fifth, the coating can be appropriately performed on the shape of the inner wall of the metal mask side surface, and the inner wall of the side surface can be separately processed.

Sixth, it is possible to prevent the coating film from being cracked by suppressing the penetration of the metal mask and performing coating in a flat state.

1 is a flow chart showing a metal mask coating method.
FIGS. 2 to 11 are views sequentially illustrating the metal mask coating method according to FIG.
12 is a schematic view of the metal mask coating apparatus according to FIG.
13 is a top view showing a metal mask coated by the coating ice method according to FIG.
FIG. 14 is a cross-sectional view showing a frame in which a metal mask according to FIG. 13 is placed.
FIG. 15 is a top view showing a state in which a metal mask according to FIG. 13 is placed on a frame.
FIGS. 16 and 17 are views showing depressions formed in the metal mask according to FIG.
18 is a cross-sectional view schematically showing a cross section of a metal mask on which the coating according to FIG. 1 has been performed.
19 to 28 are longitudinal sectional views taken along line AA in Fig. 13

It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. The scope of technical thought is not limited to the following examples. Rather, these embodiments are provided so that this disclosure will be more thorough and complete, and will fully convey the scope of the invention to those skilled in the art. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items. The same reference numerals denote the same elements at all times. Further, various elements and regions in the drawings are schematically drawn. Accordingly, the technical spirit of the present invention is not limited by the relative size or spacing depicted in the accompanying drawings.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a flow chart showing a metal mask 150 coating method (S100), and FIGS. 2 to 11 sequentially illustrate a metal mask 150 coating method (S100) according to FIG.
Referring to FIGS. 1 to 11, first, in the deposition preparation step, a metal mask 150 in which a transmission portion 153 and a blocking portion 152 are alternately formed is formed in a chamber 110 formed in a vacuum state. In the deposition preparation step, the metal mask 150 is injected from the outside into the chamber 110 through the auxiliary chamber 130 in which a vacuum state and an atmospheric pressure state are selectively formed (refer to step S110 and FIG. 2)
In the deposition step, a target material is deposited on the metal mask 150 to form a protective layer surrounding the blocking part 152. In the edge part of the blocking part 152, As shown in FIG. That is, the step of performing the deposition may include a plurality of target portions 120 provided in a plurality of regions in the chamber 110 and including a target material, respectively selectively operating on the metal mask 150 via the plurality of regions The deposition is performed on the upper side and the lower side of the transmission portion 153 (refer to step S120)
Such a deposition step may include a first deposition to an eighth deposition performing step and a first reinforcing deposition performing step to a fourth reinforcing deposition performing step. The first target portion 121 and the 1-2 target portion 122 provided in the plurality of first regions P1 of the target portions 120 may be divided into the first region P1, To the metal mask 150 via the through-hole. Here, the 1-1 target portion 121 is provided in a fixed state, and the 1-2 target portion 122 and the 2-2 target portion 125 are provided in a tiltable form. (Step S121 and Fig. 3)
In the second deposition step, the second-1 target portion 124 and the second -2 target portion 125 provided in the second zone P2 among the plurality of target portions 120 are divided into the second zone P2 The deposition is performed on the metal mask 150 via the metal mask 150. Here, the second-1 target portion 124 is provided in a fixed state, and the 1-2 target portion 122 and the 2-2 target portion 125 are provided in a tiltable form. (Refer to step S122 and FIG. 4)
In the above description, the 1-1 target portion 121 and the 2-1 target portion 124 are provided in a fixed state, and the 1-2 target portion 122, the 1-3 target portion 123, the second-2 target portion 125, and the second-third target portion 126 are provided in a tiltable form, but these are merely illustrative.
That is, at least one of the 1-2 target portion 122, the 1-3 target portion 123, the 2-2 target portion 125, and the 2-3 target portion 126 toward the metal mask 150 Any one of them may be fixedly provided so as to have a predetermined angle. The 1-1 target portion 121 and the 2-1 target portion 124 are not necessarily limited to being fixed.
In the third deposition step, the second-1 target portion 124 and the second-third target portion 126 provided in the second zone P2 are arranged in the second zone P2 (See step S123 and FIG. 5)
In the fourth deposition step, the 1-1 target portion 121 and the 1-3 target portion 123 provided in the first zone P1 are connected to the metal mask 150 via the first zone P1, (Step S124 and Fig. 6)
Here, the metal mask 150 is placed so as not to be detached from the frame 140 as described above, and deposition can be performed even when the metal mask 150 is rotated. The metal mask 150 having been subjected to the fourth deposition step is transferred to the auxiliary chamber 130 and is rotated 180 degrees in a state where the metal mask 150 is placed on the frame 140, The second deposition step is performed. The frame 140 may be formed of a glass material. (See Fig. 7)
In the fifth deposition step, the 1-1 target portion 121 and the 1-2 target portion 122 provided in the plurality of first regions P1 of the target portions 120 are divided into the first region P1 (See step S125 and FIG. 8)
In the sixth deposition step, the second-1 target portion 124 and the second -2 target portion 125 provided in the second zone P2 among the plurality of target portions 120 are divided into the second zone P2 (See step S126 and FIG. 9)
In the seventh deposition step, the second-1 target portion 124 and the second-third target portion 126 provided in the second region P2 are covered with the metal mask 150 via the second region P2, (Refer to step S127 and FIG. 10)
In the eighth deposition process, the 1-1 target portion 121 and the 1-3 target portion 123 provided in the first zone P1 are connected to the metal mask 150 via the first zone P1, (Step S128 and Fig. 11)
The first to fourth deposition performing steps or the fifth to eighth deposition performing steps described above may be performed selectively or sequentially and repeatedly to deposit a target material to a predetermined thickness with respect to the metal mask 150 .
Here, it is preferable that the first deposition performing step to the fourth deposition performing step are performed so as to have a mutual execution ratio of 4: 1 with the fifth deposition performing step to the eighth deposition performing step.
Meanwhile, in the deposition step, reinforcement deposition may be performed so that the target material protrudes from the rim portion including the side surface portion of the metal mask 150 by a predetermined height.
In the first reinforcing deposition step, the 1-2 target portion 122 performs deposition on the metal mask 150 via the first zone P1 (refer to step S129a), and in the second reinforcing deposition performing step The second -2 target portion 125 may perform deposition on the metal mask 150 via the second zone P2 (see step S129b)
In the third reinforcing deposition step, the second to third target portion 126 can perform deposition on the metal mask 150 via the second zone P2 (refer to step S129c), and performs the fourth reinforcing deposition The 1-3 target portion 123 may perform deposition on the metal mask 150 via the first zone P1 (see step S129d)
FIG. 12 is a schematic view of a coating apparatus 100 (hereinafter referred to as "coating apparatus 100") of the metal mask 150 according to FIG.
Referring to FIG. 12, the coating apparatus 100 includes a chamber 110, a plurality of target portions 120, and an auxiliary chamber 130. The target portion 120 includes a 1-1 target portion 121, a 1-2 target portion 122, a 1-3 target portion 123, a 2-1 target portion 124, A second -2 target portion 125, and a 2-3 target portion 126. Here, the chamber 110 has a space for accommodating therein a metal mask 150 for coating, and this accommodation space can be formed into a selective vacuum state. It is preferable that the size of the chamber 110 is formed to have an appropriate size and shape in consideration of the size of the metal masks 150 and 150 accommodated therein and the number of operations of the metal mask 150.
The target portion 120 includes a target material for forming a protective layer surrounding the metal mask 150. Here, the target portion 120 does not directly inject the target material. The target portion 120 has a negative polarity in a state of being connected to the power source and collides with positive ions generated in the chamber 110 by the acceleration of electrons, The target material is released to the metal mask 150 and deposited. Here, the target material may include a ceramic material.
Since this principle is a well-known principle, the present invention has been described for convenience in that deposition is performed from the target portion 120 toward the metal mask 150.
The target portion 120 is disposed at one or more positions within the chamber 110 so that the target portion 120 selectively operates with respect to the metal mask 150 passing through the corresponding region in the predetermined region inside the chamber 110, ) On the upper side and the lower side, respectively.
The first target portion 121 and the second target portion 122 of the plurality of target portions 120 are arranged in a first region P1 . Then, the deposition is performed on the metal mask 150 passing through the first zone P1.
Here, the metal mask 150 is transferred from the auxiliary chamber 130, which will be described later, to the first zone P1 where the 1-1 target portion 121 and the 1-2 target portion 122 are located, will be. At this time, the metal mask 150 passes through the first buffer region B1, which is an intermediate region between the auxiliary chamber 130 and the first region P1.
The second target portion 124 and the second target portion 125 of the plurality of target portions 120 are provided to be located in the second region P2 of the troughs set in the chamber 110 . Then, the deposition is performed on the metal mask 150 passing through the second area P2.
Here, the metal mask 150 is deposited in the first zone P1 by the 1-1 target part 121 and the 1-2 target part 122, and then transferred to the second zone P2 It will be through. At this time, the metal mask 150 passes through the second buffer region B2, which is an intermediate region between the first region P1 and the second region P2. The metal mask 150 deposited by the second-1 target portion 124 and the second -2 target portion 125 may be formed in a third buffer region (not shown) which is an arbitrary region located outside the second region P2 B3.
Here, the second zone P2 corresponds to the zone for the post-process after the process in the first zone P1 is performed as the zone which is not affected by the distance from the first zone P1.
The 1-1 target portion 121 and the 2-1 target portion 124 are arranged in a first zone P1 and a second zone P2 to perform deposition on the metal mask 150 via the zone, And the 1-2 target portion 122 and the 2-2 target portion 125 are provided in a tiltable form. Here, the tilt angle can be maintained at 35 degrees or more.
On the other hand, a second 2-3 target portion 126 is provided together with the 2-1th target portion 124 and the 2-2th target portion 125 in the second zone P2. This second 2-3 target portion 126 performs deposition on the metal mask 150 via the second region P2 from the third buffer region B3 with the second -1-1 target portion 124 . That is, the second-2 target portion 125 stops operating and operates only the remaining second-first target portion 124 and the second-third target portion 126 to perform deposition.
In addition, in the first zone P1, a 1-3 target portion 123 is provided together with the 1-1 target portion 121 and the 1-2 target portion 122. The 1-3 target portion 123 performs deposition on the metal mask 150 via the first region P1 from the second buffer region B2 together with the 1-1 target portion 121 .
That is, the 1-2 target portion 122 stops operating, and only the remaining 1-1 target portion 121 and 1-3 target portion 123 operate to perform deposition. Here, the 1-3 target portion 123 and the 2-3 target portion 126 may be provided in a tiltable form. Here, the tilt angle can be maintained at 35 degrees or more.
The 1-1 target portion 121 and the 2-1 target portion 124 described above are primarily intended for deposition on the central portion of the metal mask 150 and include a 1-2 target portion 122, The first to third target portions 123, the second to second target portions 125 and the second to third target portions 126 are formed on the side edges of the metal masks 150 (150) .
The target portion 120 may be configured such that the deposition of the target portion 120 in the first zone P1 and the second zone P2 inside the chamber 110 is performed with respect to the top and bottom so as to surround the metal mask 150 . The number of times to be performed is performed sequentially and repeatedly until the set height to be coated is achieved with respect to the metal mask 150.
The auxiliary chamber 130 is selectively provided with a vacuum state and an atmospheric pressure state to introduce the metal mask 150 from the outside of the metal mask 150 into the chamber 110 or to recover the metal mask 150 after the deposition And communicates with the chamber 110 for transferring the metal mask 150. Further, a separate transfer means (not shown) is provided between the auxiliary chamber 130 and the chamber 110 so as to transfer the metal mask 150 to the respective regions for deposition.
Such conveying means may be provided in the form of a plurality of rollers or in the form of a conveyor belt. However, this is illustrative and it is possible to apply various known means as long as it is a means capable of transferring the metal mask 150 inside the chamber 110 and the auxiliary chamber 130.
FIG. 13 is a top view showing a metal mask 150 coated by coating ice method S100 according to FIG. 13, a through-hole 153 having a through-hole shape formed alternately at the center of the metal mask 150 is formed, and a cutout 152 is formed in the remaining area to be positioned alternately with the transparent portion 153 do. The organic material pattern of the organic light emitting diode can be formed at a desired position through the transparent portion 153.
The target portion 120 described above is for performing deposition on the blocking portion 152 formed in the metal mask 150. [ That is, the 1-1 target portion 121 and the 2-1th target portion 124 are mainly intended to perform deposition on the upper and lower portions of the blocking portion 152 of the metal mask 150, The 1-2 target portion 122, the 1-3 target portion 123, the 2-2 target portion 125 and the 2-3 target portion 126 are formed on the edge of the metal mask 150 And the deposition is performed so as to protrude more than the central portion with a set height
FIG. 14 is a sectional view showing a frame 140 in which the metal mask 150 according to FIG. 13 is placed, FIG. 15 shows a state in which the metal mask 150 according to FIG. 13 is placed in the frame 140 according to FIG. Fig.
Referring to FIG. 14, the frame 140 is formed with a depression 142, which is depressed so as to be stepped from the rim 141, and an opening 143 is formed in a predetermined region of the center of the depression 142. It is preferable that the circumference of the depression 142 is formed so as to be capable of receiving and integrally combining the metal mask 150.
15, the lower surface of the metal mask 150 is exposed to the opposite surface of the frame 140 through the opening 143 while the metal mask 150 is received in the depression 142. That is, the deposition of the target material on the metal mask 150 can deposit the metal mask 150 on the upper and lower sides through the rotation of the metal mask 150 by 180 degrees while being housed in the frame 140.
At this time, the metal mask 150 is accommodated in the depressed state of the frame 140 in a state of being stretched so as not to be stuck. To this end, the metal mask 150 is received in the depression 142 of the frame 140 with the tensile force applied thereto by means of clamping mechanisms, and is engaged with the frame 140. That is, the clamp supports the mask disposed on the frame 140, connects the clamp with the tension means, and applies a tensile force to the clamp.
In order to tension the metal mask 150 to a uniform value, a large number of clamps are required. One clamp is suitable for about 40 to 70 mm, and the clamp width is about 25 to 40 mm. Also, it is desirable that the load cell which gives the force when tensioned can perform 50 kg per clamp. When clamping the metal mask 150 with a clamp, the pressure of the clamp is about 20 kgf, 25 mm in the width direction and 20 mm in the depth direction are suitable. When these operations are completed, the change of the metal mask 150 is within 0.05%, and the deflection of the metal mask 150 fixed to the frame 140 can be realized within 200 [mu] m.
The material subjected to the tension annealing process in which the metal mask 150 is heated to maintain the flatness for tensile force against the metal mask 150 may be used. Here, it is appropriate that the highest point of the flat left, right and center portions is 1.5 mm.
FIGS. 16 and 17 are views showing a state in which a depression is formed in the metal mask 150 according to FIG. Referring to FIGS. 16 and 17, a depression may be formed around the rim of the transmission portion 153 before coating the metal mask 150 through the coating apparatus 100.
This is to minimize the generation of foreign matter in the metal mask 150 generated around the transmissive portion 153 by the damage of the metal mask 150 during the chemical vapor deposition process of the organic light emitting diode. That is, it is possible to minimize the foreign matter generation region by etching (for example, wet etching, etc.) in advance. These depressions may be formed in the form of a singular number or a plurality of adjacent to the rim of the metal mask 150.
18 is a cross-sectional view schematically showing a cross section of a metal mask 150 on which deposition has been performed by the coating apparatus 100 according to FIG. The deposition of the target portion 120 may be performed by depositing a coating layer C1 on at least one of the upper and lower surfaces of the blocking portion 152 and the coating layer C2 deposited on the center portion of the metal mask 150 Process time, material cost, uniformity, and the like.
For example, the rim may be formed with a height of about 4 탆 to about 6 탆, and the central portion may have a height of about 2 탆 to about 4 탆. The resistance of the metal mask 150 can be maintained at about 10 to 1,000 MΩ based on 1,000 V. The metal mask 150 may be formed using a nickel alloy having Ni content of 36% or 42% - 0.1% or less, Cr 18%, Si 1% or less, Mn 2% or less, P 0.5% or less S 0.04% or less, and all of the remaining elements Fel. In addition, it is preferable that the content of Ni is not more than 18%, C is not more than 0.12%, Cr is 12%, Si is not more than 1%, Mn is not more than 2%, P is not more than 0.45% Materials can also be used. The thickness of the metal mask 150 may be 0.05 to 0.25 mm, and the surface roughness may be 1.0 to 1.6 mu.
19 to 28 are longitudinal sectional views taken along line AA in Fig. The side edge portion of the metal mask 150 may be formed so that at least one of the upper side of the side end portion and the lower side of the side end portion is tapered at a predetermined angle, May be formed to have a set angle of 40 [deg.] To 120 [deg.].
19, the side end portions of the metal mask 150 are formed so that the lower side of the side end portions has a set angle of 48 degrees, and the round ends of the metal mask 150 are inwardly directed toward the inner side from the 2/3 point from the lower surface and 1/3 from the upper surface, As shown in FIG.
20, the side end portions of the metal mask 150 are formed so that the lower side of the side end portion has a set angle of 74 degrees, and the inner side at the 1/3 point from the lower surface and the 2/3 point from the upper surface As shown in Fig. Here, half-etching is performed under the metal mask 150 to form a recessed region H.
21 to 26, the side end portions of the metal mask 150 are formed so that the inclination of the side surface of the metal mask 150 is set to any one of 51 °, 53 °, 55 °, 59 °, 68 °, and 73 ° And may be formed to be rounded toward the inner direction at 2/3 point from the bottom.
27 to 28, the side edge portion of the metal mask 150 is formed to have a slope of 73 ° or 85 ° with respect to the paper surface, and is formed to be rounded inward at a half point from the bottom . Here, a region H in which the half-etching is performed may be formed on the upper portion of the metal mask 150.
As a result, since the etching opposite side is formed in a pointed shape during the cross-sectional etching operation, defects such as scratches on the glass substrate and the contact glass substrate can be prevented. In addition, a half-etching mask may be formed by half-etching so as to form depressions on the upper portion through etching, and the side portions may be formed gently. Arcing can be minimized by depositing two layers on the side surface. Of course, the dimples are not limited to being formed on the top, but may be formed on the bottom.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

delete

110: chamber 120: target portion
121: 1-1 target portion 122: 1-2 target portion
123: 1-3 target portion 124: 2-1 target portion
125: 2-2 target portion 126: 2-3 target portion
130: auxiliary chamber 140: frame
150: Metal mask P1: Zone 1
P2: Zone 2

Claims (24)

A deposition preparation step in which a metal mask in which a transmission portion and a blocking portion are alternately formed is disposed in a chamber formed in a vacuum state; And
Depositing a target material on the metal mask to form a protective layer surrounding at least one of the blocking portions and depositing a target material on the edge of the blocking portion such that the target material protrudes from the central portion of the blocking portion by a predetermined height, ≪ / RTI > The method according to claim 1,
In the deposition preparation step,
Wherein the metal mask is charged into the chamber from the outside through an auxiliary chamber in which a vacuum state and an atmospheric pressure state are selectively formed inside the metal mask. The method according to claim 1,
The deposition step may include:
Wherein a plurality of target portions provided in a plurality of regions in the chamber and including the target material selectively operate with respect to the metal mask via the plurality of regions to deposit on the upper and lower sides of the transmissive portion, Of the metal mask. The method of claim 3,
The deposition step may include:
A first deposition performing step of performing deposition with respect to the metal mask via the first zone, the 1-1 target part and the 1-2 target part provided in the first zone of the plurality of zones; And
The second target 1 and the second target 2 provided in the second region of the plurality of target portions include a second deposition performing step of performing deposition on the metal mask via the second region Of the metal mask. 5. The method of claim 4,
Wherein the first target portion and the second target portion are provided in a fixed state and the first target portion and the second target portion are provided in a tiltable manner, . 6. The method of claim 5,
The deposition step may include:
A third deposition performing step of performing deposition on the metal mask via the second region such that the second-1 target portion and the second-third target portion provided in the second region face the first region; And
And a fourth deposition performing step of performing deposition on the metal mask via the first zone, wherein the 1-1 target portion and the 1-3 target portion provided in the first zone perform deposition. The method according to claim 6,
Wherein the 1-3 target portion and the 2-3 target portion are provided in a tiltable form. 8. The method of claim 7,
Wherein the fifth deposition performing step to the eighth deposition performing step corresponding to each of the first deposition performing step to the fourth deposition performing step are performed on the lower side of the metal mask. 9. The method of claim 8,
Wherein the first deposition step to the fourth deposition step or the fifth deposition step to the eighth deposition step are sequentially and repeatedly performed to deposit the target material at a predetermined thickness, . 9. The method of claim 8,
Wherein the first deposition performing step to the fourth deposition performing step are performed so as to have a mutual performing ratio of 4: 1 with the fifth deposition performing step to the eighth deposition performing step. 8. The method of claim 7,
The deposition step may include:
The first 1-2 target portion performing deposition on the metal mask via the first zone; And
Wherein the second-2 target portion further performs a second reinforcement-deposition-performing step of performing a deposition on the metal mask via the second region. 12. The method of claim 11,
The deposition step may include:
A third reinforcing deposition performing step of performing deposition on the metal mask via the second section such that the second to third target portion faces the first section; And
Wherein the first 1-3 target portion further performs a deposition on the metal mask via the first zone. delete delete delete delete delete delete delete delete delete delete delete delete
KR1020150050664A 2015-04-10 2015-04-10 Coating method for matal mask and matal mask manufactured by the same KR101570429B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150050664A KR101570429B1 (en) 2015-04-10 2015-04-10 Coating method for matal mask and matal mask manufactured by the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150050664A KR101570429B1 (en) 2015-04-10 2015-04-10 Coating method for matal mask and matal mask manufactured by the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020150117976A Division KR101744600B1 (en) 2015-08-21 2015-08-21 Matal mask

Publications (1)

Publication Number Publication Date
KR101570429B1 true KR101570429B1 (en) 2015-11-20

Family

ID=54844363

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150050664A KR101570429B1 (en) 2015-04-10 2015-04-10 Coating method for matal mask and matal mask manufactured by the same

Country Status (1)

Country Link
KR (1) KR101570429B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102135219B1 (en) 2020-04-14 2020-07-17 (주)제이에스에스 Coating system for mask frame with structure of standing road and ion beam
KR102150620B1 (en) 2020-04-14 2020-09-01 (주)제이에스에스 Coating device for mask frame with structure of standing road
KR102152253B1 (en) 2020-04-14 2020-09-04 (주)제이에스에스 Ion beam Treatment device with structure of standing road

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011168894A (en) 2011-04-20 2011-09-01 Ulvac Singapore Pte Ltd Mask for film-deposition and method for cleaning the same
KR101234953B1 (en) * 2011-02-28 2013-02-19 하이디스 테크놀로지 주식회사 Shadow mask for making thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101234953B1 (en) * 2011-02-28 2013-02-19 하이디스 테크놀로지 주식회사 Shadow mask for making thin film
JP2011168894A (en) 2011-04-20 2011-09-01 Ulvac Singapore Pte Ltd Mask for film-deposition and method for cleaning the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102135219B1 (en) 2020-04-14 2020-07-17 (주)제이에스에스 Coating system for mask frame with structure of standing road and ion beam
KR102150620B1 (en) 2020-04-14 2020-09-01 (주)제이에스에스 Coating device for mask frame with structure of standing road
KR102152253B1 (en) 2020-04-14 2020-09-04 (주)제이에스에스 Ion beam Treatment device with structure of standing road

Similar Documents

Publication Publication Date Title
KR101730498B1 (en) Apparatus for organic layer deposition, method for manufacturing of organic light emitting display apparatus using the same
US9388488B2 (en) Organic film deposition apparatus and method of manufacturing organic light-emitting display device by using the same
US8883259B2 (en) Thin film deposition apparatus
KR102245762B1 (en) Holder, carrier having the same, and method for fixing a substrate
US9637816B2 (en) Mask assembly, apparatus for manufacturing display apparatus, and method of manufacturing display apparatus
US20120068201A1 (en) Thin Film Deposition Apparatus, Method of Manufacturing Organic Light-Emitting Display Device by Using the Apparatus, and Organic Light-Emitting Display Device Manufactured by Using the Method
US20120103253A1 (en) Organic layer deposition apparatus
KR101570429B1 (en) Coating method for matal mask and matal mask manufactured by the same
US10424735B2 (en) Organic light-emitting display apparatus, organic layer deposition apparatus, and method of manufacturing the organic light-emitting display apparatus by using the organic layer deposition apparatus
WO2017203502A2 (en) High-precision shadow-mask-deposition system and method therefor
KR200489621Y1 (en) A ceramic mask for manufacturing organic light-emitting diode(oled)
US20210351388A1 (en) Mechanically Pre-biased Shadow Mask and Method of Formation
KR200489874Y1 (en) Substrate edge masking system
KR20140145383A (en) Inline Type OLED Face Up Evaporator for large size OLED
TWI631650B (en) Carrier for substrates and apparatus therefor
KR101578871B1 (en) Coating apparatus
KR101744600B1 (en) Matal mask
US20180161808A1 (en) Film-forming method
WO2018176918A1 (en) Conveying apparatus, conveying method, and vacuum evaporation apparatus
JP2018085523A (en) Carrier for substrates
JP2021080560A (en) Film deposition device, film deposition method using the same and method for manufacturing electronic device
KR20180091573A (en) Apparatus for transferring substrate and tray
WO2019228610A1 (en) Holder, carrier comprising at least two holders, apparatuses and methods
KR20170137160A (en) A carrier system for substrates to be processed
JP2009064740A (en) Deposition method and device

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20181010

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20191017

Year of fee payment: 5