KR101549766B1 - 질화규소 물질의 선택적 연마를 위한 조성물 및 방법 - Google Patents

질화규소 물질의 선택적 연마를 위한 조성물 및 방법 Download PDF

Info

Publication number
KR101549766B1
KR101549766B1 KR1020137030350A KR20137030350A KR101549766B1 KR 101549766 B1 KR101549766 B1 KR 101549766B1 KR 1020137030350 A KR1020137030350 A KR 1020137030350A KR 20137030350 A KR20137030350 A KR 20137030350A KR 101549766 B1 KR101549766 B1 KR 101549766B1
Authority
KR
South Korea
Prior art keywords
polymer
poly
vinylpyridine
polishing
ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137030350A
Other languages
English (en)
Korean (ko)
Other versions
KR20140027276A (ko
Inventor
윌리엄 워드
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20140027276A publication Critical patent/KR20140027276A/ko
Application granted granted Critical
Publication of KR101549766B1 publication Critical patent/KR101549766B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020137030350A 2011-04-15 2012-04-13 질화규소 물질의 선택적 연마를 위한 조성물 및 방법 Active KR101549766B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/087,857 US8808573B2 (en) 2011-04-15 2011-04-15 Compositions and methods for selective polishing of silicon nitride materials
US13/087,857 2011-04-15
PCT/US2012/033463 WO2012142374A2 (en) 2011-04-15 2012-04-13 Compositions and methods for selective polishing of silicon nitride materials

Publications (2)

Publication Number Publication Date
KR20140027276A KR20140027276A (ko) 2014-03-06
KR101549766B1 true KR101549766B1 (ko) 2015-09-02

Family

ID=47006699

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137030350A Active KR101549766B1 (ko) 2011-04-15 2012-04-13 질화규소 물질의 선택적 연마를 위한 조성물 및 방법

Country Status (8)

Country Link
US (1) US8808573B2 (https=)
EP (1) EP2697330B1 (https=)
JP (1) JP5792889B2 (https=)
KR (1) KR101549766B1 (https=)
CN (1) CN103492519B (https=)
SG (1) SG193528A1 (https=)
TW (1) TWI470047B (https=)
WO (1) WO2012142374A2 (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956450B (zh) * 2011-08-16 2015-03-11 中芯国际集成电路制造(北京)有限公司 一种制作半导体器件的方法
US8859428B2 (en) 2012-10-19 2014-10-14 Air Products And Chemicals, Inc. Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof
US8906252B1 (en) * 2013-05-21 2014-12-09 Cabot Microelelctronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9850402B2 (en) 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
SG11201608134YA (en) 2014-04-03 2016-10-28 3M Innovative Properties Co Polishing pads and systems and methods of making and using the same
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
JP6533439B2 (ja) * 2015-09-15 2019-06-19 株式会社フジミインコーポレーテッド 研磨用組成物
KR101715931B1 (ko) * 2015-12-11 2017-03-14 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
KR20170076191A (ko) 2015-12-24 2017-07-04 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
JP2017132944A (ja) * 2016-01-29 2017-08-03 株式会社フジミインコーポレーテッド 濃縮研磨用組成物の製造方法および安定化方法
CN109906257B (zh) * 2016-10-17 2021-11-09 Cmc材料股份有限公司 具有改善的凹陷及图案选择性的对氧化物及氮化物有选择性的化学机械抛光组合物
KR102758095B1 (ko) * 2016-12-14 2025-01-22 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
KR102704751B1 (ko) * 2016-12-14 2024-09-10 솔브레인 주식회사 화학 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US10626298B1 (en) 2019-03-20 2020-04-21 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon
WO2021081145A1 (en) 2019-10-22 2021-04-29 Cmc Materials, Inc. Polishing composition and method with high selectivity for silicon nitride and polysilicon over silicon oxide
CN117120563B (zh) * 2020-12-21 2026-03-27 Cmc材料有限责任公司 用于高形貌选择性的自停止性抛光组合物与方法
EP4341315A4 (en) 2021-05-20 2025-04-16 Versum Materials US, LLC IMIDAZOLIUM-BASED POLY(IONIC LIQUID(S)) AND ASSOCIATED USE

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1691401B1 (en) * 1999-06-18 2012-06-13 Hitachi Chemical Co., Ltd. Method for polishing a substrate using CMP abrasive
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP4668528B2 (ja) * 2003-09-05 2011-04-13 株式会社フジミインコーポレーテッド 研磨用組成物
US20070218811A1 (en) * 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US20080254717A1 (en) * 2004-09-28 2008-10-16 Hitachi Chemical Co., Ltd. Cmp Polishing Slurry and Method of Polishing Substrate
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7297633B1 (en) * 2006-06-05 2007-11-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
EP2197972B1 (en) * 2007-09-21 2020-04-01 Cabot Microelectronics Corporation Polishing composition and method utilizing abrasive particles treated with an aminosilane
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same

Also Published As

Publication number Publication date
TW201245363A (en) 2012-11-16
US20120264304A1 (en) 2012-10-18
KR20140027276A (ko) 2014-03-06
CN103492519A (zh) 2014-01-01
SG193528A1 (en) 2013-10-30
WO2012142374A3 (en) 2013-03-14
JP5792889B2 (ja) 2015-10-14
EP2697330B1 (en) 2015-10-14
EP2697330A2 (en) 2014-02-19
US8808573B2 (en) 2014-08-19
WO2012142374A2 (en) 2012-10-18
CN103492519B (zh) 2015-11-25
TWI470047B (zh) 2015-01-21
JP2014515777A (ja) 2014-07-03
EP2697330A4 (en) 2014-09-24

Similar Documents

Publication Publication Date Title
KR101549766B1 (ko) 질화규소 물질의 선택적 연마를 위한 조성물 및 방법
US9633863B2 (en) Compositions and methods for selective polishing of silicon nitride materials
EP2035523B1 (en) Compositions and methods for polishing silicon nitride materials
TWI428436B (zh) 拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法
EP2384258B1 (en) Method to selectively polish silicon carbide films
EP1831321B1 (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP5827221B2 (ja) ポリシリコン除去速度の抑制のためのｃｍｐ組成物および方法
KR101104369B1 (ko) 화학적 기계적 연마용 슬러리

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180723

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20190624

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000