KR101537359B1 - 감소된 크랙 및／또는 표면 결함 밀도들을 가지는 에피택셜 열전기막들의 증착 방법 및 관련된 소자들 - Google Patents

감소된 크랙 및／또는 표면 결함 밀도들을 가지는 에피택셜 열전기막들의 증착 방법 및 관련된 소자들 Download PDF

Info

Publication number
KR101537359B1
KR101537359B1 KR1020097018183A KR20097018183A KR101537359B1 KR 101537359 B1 KR101537359 B1 KR 101537359B1 KR 1020097018183 A KR1020097018183 A KR 1020097018183A KR 20097018183 A KR20097018183 A KR 20097018183A KR 101537359 B1 KR101537359 B1 KR 101537359B1
Authority
KR
South Korea
Prior art keywords
thermoelectric
film
degrees
substrate
growth surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097018183A
Other languages
English (en)
Korean (ko)
Other versions
KR20090129410A (ko
Inventor
조나단 엠. 피어스
로버트 피. 바우도
Original Assignee
넥스트림 써멀 솔루션즈, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 넥스트림 써멀 솔루션즈, 인크. filed Critical 넥스트림 써멀 솔루션즈, 인크.
Publication of KR20090129410A publication Critical patent/KR20090129410A/ko
Application granted granted Critical
Publication of KR101537359B1 publication Critical patent/KR101537359B1/ko
Assigned to 라이르드 테크놀로지스, 아이엔씨 reassignment 라이르드 테크놀로지스, 아이엔씨 권리의 전부이전등록 Assignors: 넥스트림 써멀 솔루션즈, 인크.
Assigned to 레어드 써멀 시스템스 인코포레이티드 reassignment 레어드 써멀 시스템스 인코포레이티드 권리의 전부이전등록 Assignors: 라이르드 테크놀로지스, 아이엔씨
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020097018183A 2007-02-02 2008-02-01 감소된 크랙 및／또는 표면 결함 밀도들을 가지는 에피택셜 열전기막들의 증착 방법 및 관련된 소자들 Expired - Fee Related KR101537359B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88796407P 2007-02-02 2007-02-02
US60/887,964 2007-02-02

Publications (2)

Publication Number Publication Date
KR20090129410A KR20090129410A (ko) 2009-12-16
KR101537359B1 true KR101537359B1 (ko) 2015-07-16

Family

ID=39494339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018183A Expired - Fee Related KR101537359B1 (ko) 2007-02-02 2008-02-01 감소된 크랙 및／또는 표면 결함 밀도들을 가지는 에피택셜 열전기막들의 증착 방법 및 관련된 소자들

Country Status (6)

Country Link
US (1) US7804019B2 (https=)
EP (3) EP2423990B1 (https=)
JP (1) JP5642970B2 (https=)
KR (1) KR101537359B1 (https=)
CA (1) CA2676089A1 (https=)
WO (1) WO2008097484A2 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090199887A1 (en) * 2008-02-08 2009-08-13 North Carolina State University And Nextreme Thermal Solutions, Inc. Methods of forming thermoelectric devices including epitaxial thermoelectric elements of different conductivity types on a same substrate and related structures
US20090205696A1 (en) * 2008-02-15 2009-08-20 Nextreme Thermal Solutions, Inc. Thermoelectric Heat Pumps Providing Active Thermal Barriers and Related Devices and Methods
DE102009000333A1 (de) 2009-01-20 2010-07-22 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Thermoelektrisches Halbleiterbauelement
JP5750945B2 (ja) * 2010-11-15 2015-07-22 ヤマハ株式会社 熱電素子
US8872016B2 (en) * 2011-05-19 2014-10-28 Fuji Electric Co., Ltd. Thermoelectric conversion structure and method of manufacturing same
KR20140012027A (ko) * 2011-05-19 2014-01-29 후지 덴키 가부시키가이샤 열전 변환 구조체 및 그 제조 방법
WO2013119293A2 (en) * 2011-11-22 2013-08-15 Research Triangle Institute Nanoscale, ultra-thin films for excellent thermoelectric figure of merit
KR101956278B1 (ko) 2011-12-30 2019-03-11 삼성전자주식회사 그래핀 함유 복합 적층체, 이를 포함하는 열전재료, 열전모듈과 열전 장치
US9190592B2 (en) * 2012-11-06 2015-11-17 Nextreme Thermal Solutions, Inc. Thin film thermoelectric devices having favorable crystal tilt
CN111998572B (zh) 2014-05-23 2022-05-03 莱尔德热管理系统股份有限公司 包括电阻加热器的热电加热/冷却装置
KR102299362B1 (ko) * 2014-08-21 2021-09-08 삼성전자주식회사 경사진 c-plane 상의 4성분계 양자우물을 포함하는 그린광 발광소자
EP3347741B1 (en) * 2015-09-08 2020-05-20 Shenzhen Xpectvision Technology Co., Ltd. Methods for making an x-ray detector
KR102382321B1 (ko) * 2016-02-01 2022-04-04 엘지이노텍 주식회사 열전 소자 및 이의 제조 방법
TWI785106B (zh) * 2018-08-28 2022-12-01 晶元光電股份有限公司 半導體裝置
US12382830B2 (en) * 2021-06-23 2025-08-05 The Johns Hopkins University Large area scalable fabrication methodologies for versatile thermoelectric device modules
TWI882241B (zh) * 2022-05-05 2025-05-01 環球晶圓股份有限公司 磊晶結構及其製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02243593A (ja) * 1989-02-06 1990-09-27 Motorola Inc 低圧ｍｏｃｖｄを用いたエピタキシャル膜成長法
US4987472A (en) * 1987-03-16 1991-01-22 Shin-Etsu Handotai Co. Ltd. Compound semiconductor epitaxial wafer
EP0437654A1 (de) * 1990-01-16 1991-07-24 Reinhard Dr. Dahlberg Thermoelement-Schenkel mit richtungsabhängiger Quantisierung der Ladungsträger
US20040102051A1 (en) * 2002-06-27 2004-05-27 Harald Bottner Methods for producing a thermoelectric layer structure and components with a thermoelectric layer structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998042033A1 (en) 1997-03-17 1998-09-24 Massachusetts Institute Of Technology Si/SiGe SUPERLATTICE STRUCTURES FOR USE IN THERMOELECTRIC DEVICES
AU6783598A (en) 1997-03-31 1998-10-22 Research Triangle Institute Thin-film thermoelectric device and fabrication method of same
US7342169B2 (en) * 2001-10-05 2008-03-11 Nextreme Thermal Solutions Phonon-blocking, electron-transmitting low-dimensional structures

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4987472A (en) * 1987-03-16 1991-01-22 Shin-Etsu Handotai Co. Ltd. Compound semiconductor epitaxial wafer
JPH02243593A (ja) * 1989-02-06 1990-09-27 Motorola Inc 低圧ｍｏｃｖｄを用いたエピタキシャル膜成長法
EP0437654A1 (de) * 1990-01-16 1991-07-24 Reinhard Dr. Dahlberg Thermoelement-Schenkel mit richtungsabhängiger Quantisierung der Ladungsträger
US20040102051A1 (en) * 2002-06-27 2004-05-27 Harald Bottner Methods for producing a thermoelectric layer structure and components with a thermoelectric layer structure

Also Published As

Publication number Publication date
WO2008097484A3 (en) 2009-08-06
US7804019B2 (en) 2010-09-28
JP5642970B2 (ja) 2014-12-17
EP2109896A2 (en) 2009-10-21
US20080185030A1 (en) 2008-08-07
CA2676089A1 (en) 2008-08-14
KR20090129410A (ko) 2009-12-16
EP2423991B1 (en) 2013-04-17
EP2423990B1 (en) 2013-04-17
EP2423990A1 (en) 2012-02-29
JP2010518600A (ja) 2010-05-27
WO2008097484A2 (en) 2008-08-14
EP2109896B1 (en) 2013-04-10
EP2423991A1 (en) 2012-02-29

Similar Documents

Publication Publication Date Title
KR101537359B1 (ko) 감소된 크랙 및／또는 표면 결함 밀도들을 가지는 에피택셜 열전기막들의 증착 방법 및 관련된 소자들
US7679203B2 (en) Methods of forming thermoelectric devices using islands of thermoelectric material and related structures
US7838759B2 (en) Methods of forming thermoelectric devices including electrically insulating matrices between conductive traces
EP1495498B1 (en) Thermoelectric device utilizing double-sided peltier junctions
US8623687B2 (en) Methods of forming thermoelectric devices including conductive posts and/or different solder materials and related methods and structures
Fan et al. SiGeC/Si superlattice microcoolers
KR100933967B1 (ko) 포논 차단 전자 투과 소형 구조물
US20100257871A1 (en) Thin film thermoelectric devices for power conversion and cooling
US20110000224A1 (en) Metal-core thermoelectric cooling and power generation device
US9190592B2 (en) Thin film thermoelectric devices having favorable crystal tilt
EP1756881A2 (en) Thin film thermoelectric devices for power conversion and cooling
US8525016B2 (en) Thermoelectric devices including thermoelectric elements having off-set metal pads and related structures, methods, and systems
JP7533794B2 (ja) 窒化物半導体基板の製造方法
WO2025254724A1 (en) Metal-bonded substrates for devices, thermoelectric modules, and thermoelectric arrays

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

Fee payment year number: 1

St.27 status event code: A-2-2-U10-U12-oth-PR1002

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20180626

Year of fee payment: 4

PR1001 Payment of annual fee

Fee payment year number: 4

St.27 status event code: A-4-4-U10-U11-oth-PR1001

FPAY Annual fee payment

Payment date: 20190626

Year of fee payment: 5

PR1001 Payment of annual fee

Fee payment year number: 5

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

Fee payment year number: 6

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

Fee payment year number: 7

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PC1903 Unpaid annual fee

Not in force date: 20220711

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

K11-X000 Ip right revival requested

St.27 status event code: A-6-4-K10-K11-oth-X000

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220711

St.27 status event code: N-4-6-H10-H13-oth-PC1903

PR0401 Registration of restoration

St.27 status event code: A-6-4-K10-K13-oth-PR0401

PR1001 Payment of annual fee

Fee payment year number: 8

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PR1001 Payment of annual fee

Fee payment year number: 9

St.27 status event code: A-4-4-U10-U11-oth-PR1001

PC1903 Unpaid annual fee

Not in force date: 20240711

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

St.27 status event code: A-4-4-U10-U13-oth-PC1903

PC1903 Unpaid annual fee

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240711

St.27 status event code: N-4-6-H10-H13-oth-PC1903