KR101536334B1 - 기판의 표면을 재생하는 방법 - Google Patents

기판의 표면을 재생하는 방법 Download PDF

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Publication number
KR101536334B1
KR101536334B1 KR1020090109607A KR20090109607A KR101536334B1 KR 101536334 B1 KR101536334 B1 KR 101536334B1 KR 1020090109607 A KR1020090109607 A KR 1020090109607A KR 20090109607 A KR20090109607 A KR 20090109607A KR 101536334 B1 KR101536334 B1 KR 101536334B1
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South Korea
Prior art keywords
layer
substrate
protruding
polishing
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020090109607A
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English (en)
Korean (ko)
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KR20100092363A (ko
Inventor
아지즈 아라미-이드리씨
세바스티앙 케르딜르
왈테르 슈와르젠바흐
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소이텍
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Publication date
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Publication of KR20100092363A publication Critical patent/KR20100092363A/ko
Application granted granted Critical
Publication of KR101536334B1 publication Critical patent/KR101536334B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020090109607A 2009-02-12 2009-11-13 기판의 표면을 재생하는 방법 Expired - Fee Related KR101536334B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09290104.0 2009-02-12
EP09290104A EP2219208B1 (en) 2009-02-12 2009-02-12 Method for reclaiming a surface of a substrate

Publications (2)

Publication Number Publication Date
KR20100092363A KR20100092363A (ko) 2010-08-20
KR101536334B1 true KR101536334B1 (ko) 2015-07-13

Family

ID=40725919

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090109607A Expired - Fee Related KR101536334B1 (ko) 2009-02-12 2009-11-13 기판의 표면을 재생하는 방법

Country Status (7)

Country Link
US (1) US8435897B2 (enExample)
EP (1) EP2219208B1 (enExample)
JP (1) JP5219094B2 (enExample)
KR (1) KR101536334B1 (enExample)
CN (1) CN101866824B (enExample)
SG (1) SG164310A1 (enExample)
TW (1) TWI480939B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100022070A1 (en) * 2008-07-22 2010-01-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate
FR2971365B1 (fr) * 2011-02-08 2013-02-22 Soitec Silicon On Insulator Méthode de recyclage d'un substrat source
JP5799740B2 (ja) * 2011-10-17 2015-10-28 信越半導体株式会社 剥離ウェーハの再生加工方法
CN103646867B (zh) * 2013-11-29 2016-04-06 上海华力微电子有限公司 改善晶圆剥落缺陷的方法
JP6676365B2 (ja) * 2015-12-21 2020-04-08 キヤノン株式会社 撮像装置の製造方法
FR3074608B1 (fr) 2017-12-05 2019-12-06 Soitec Procede de preparation d'un residu de substrat donneur, substrat obtenu a l'issu de ce procede, et utilisation d'un tel susbtrat
US10373818B1 (en) * 2018-01-31 2019-08-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of wafer recycling
SE1950611A1 (en) * 2019-05-23 2020-09-29 Ascatron Ab Crystal efficient SiC device wafer production
FR3120159B1 (fr) 2021-02-23 2023-06-23 Soitec Silicon On Insulator Procédé de préparation du résidu d’un substrat donneur ayant subi un prélèvement d’une couche par délamination
CN113192823B (zh) * 2021-04-27 2022-06-21 麦斯克电子材料股份有限公司 一种soi键合工艺后衬底片的再生加工方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5867302A (en) * 1997-08-07 1999-02-02 Sandia Corporation Bistable microelectromechanical actuator
JP2001155978A (ja) * 1999-11-29 2001-06-08 Shin Etsu Handotai Co Ltd 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
EP1662560A2 (en) * 2004-11-26 2006-05-31 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
US20060121699A1 (en) * 2004-01-09 2006-06-08 Blomiley Eric R Deposition methods

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195775A (ja) * 1997-12-26 1999-07-21 Sony Corp 半導体基板および薄膜半導体素子およびそれらの製造方法ならびに陽極化成装置
SG71903A1 (en) * 1998-01-30 2000-04-18 Canon Kk Process of reclamation of soi substrate and reproduced substrate
US6863593B1 (en) 1998-11-02 2005-03-08 Applied Materials, Inc. Chemical mechanical polishing a substrate having a filler layer and a stop layer
CN1270366C (zh) * 2002-06-04 2006-08-16 中芯国际集成电路制造(上海)有限公司 可重复使用的晶圆控片及其形成方法
WO2004019403A2 (en) * 2002-08-26 2004-03-04 S.O.I.Tec Silicon On Insulator Technologies Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom
JP4492054B2 (ja) * 2003-08-28 2010-06-30 株式会社Sumco 剥離ウェーハの再生処理方法及び再生されたウェーハ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5867302A (en) * 1997-08-07 1999-02-02 Sandia Corporation Bistable microelectromechanical actuator
JP2001155978A (ja) * 1999-11-29 2001-06-08 Shin Etsu Handotai Co Ltd 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
US20060121699A1 (en) * 2004-01-09 2006-06-08 Blomiley Eric R Deposition methods
EP1662560A2 (en) * 2004-11-26 2006-05-31 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer

Also Published As

Publication number Publication date
US8435897B2 (en) 2013-05-07
TW201030830A (en) 2010-08-16
JP2010186987A (ja) 2010-08-26
JP5219094B2 (ja) 2013-06-26
SG164310A1 (en) 2010-09-29
CN101866824A (zh) 2010-10-20
EP2219208B1 (en) 2012-08-29
US20100200854A1 (en) 2010-08-12
KR20100092363A (ko) 2010-08-20
CN101866824B (zh) 2014-03-05
TWI480939B (zh) 2015-04-11
EP2219208A1 (en) 2010-08-18

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