KR101536195B1 - 포토마스크 블랭크, 포토마스크 및 그 제조 방법 - Google Patents

포토마스크 블랭크, 포토마스크 및 그 제조 방법 Download PDF

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KR101536195B1
KR101536195B1 KR1020090026982A KR20090026982A KR101536195B1 KR 101536195 B1 KR101536195 B1 KR 101536195B1 KR 1020090026982 A KR1020090026982 A KR 1020090026982A KR 20090026982 A KR20090026982 A KR 20090026982A KR 101536195 B1 KR101536195 B1 KR 101536195B1
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South Korea
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film
pattern
phase shift
light
mask
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KR20090104732A (ko
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노자와 오사무
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호야 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020090026982A 2008-03-31 2009-03-30 포토마스크 블랭크, 포토마스크 및 그 제조 방법 Active KR101536195B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008094139A JP5345333B2 (ja) 2008-03-31 2008-03-31 フォトマスクブランク、フォトマスク及びその製造方法
JPJP-P-2008-094139 2008-03-31

Related Child Applications (1)

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KR1020150038958A Division KR101586344B1 (ko) 2008-03-31 2015-03-20 포토마스크 블랭크, 포토마스크 및 그 제조 방법

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KR20090104732A KR20090104732A (ko) 2009-10-06
KR101536195B1 true KR101536195B1 (ko) 2015-07-13

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KR1020090026982A Active KR101536195B1 (ko) 2008-03-31 2009-03-30 포토마스크 블랭크, 포토마스크 및 그 제조 방법
KR1020150038958A Active KR101586344B1 (ko) 2008-03-31 2015-03-20 포토마스크 블랭크, 포토마스크 및 그 제조 방법

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KR1020150038958A Active KR101586344B1 (ko) 2008-03-31 2015-03-20 포토마스크 블랭크, 포토마스크 및 그 제조 방법

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US (2) US7989122B2 (https=)
JP (1) JP5345333B2 (https=)
KR (2) KR101536195B1 (https=)
DE (1) DE102009014610A1 (https=)
TW (1) TWI457694B (https=)

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JP5599213B2 (ja) * 2010-03-30 2014-10-01 Ｈｏｙａ株式会社 モールドの製造方法
JP5123349B2 (ja) * 2010-04-19 2013-01-23 Ｈｏｙａ株式会社 多階調マスクの製造方法
KR101197250B1 (ko) * 2010-04-23 2012-11-05 주식회사 에스앤에스텍 블랭크 마스크, 포토 마스크 및 그의 제조 방법
US8513133B2 (en) 2011-03-31 2013-08-20 Jsr Corporation Composition for forming resist underlayer film and method for forming pattern
JP5820555B2 (ja) * 2011-03-31 2015-11-24 Hoya株式会社 マスクブランク及び位相シフトマスクの製造方法
JP6058318B2 (ja) * 2011-09-14 2017-01-11 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法
JP5939662B2 (ja) * 2011-09-21 2016-06-22 Hoya株式会社 マスクブランクの製造方法
JP6084391B2 (ja) * 2011-09-28 2017-02-22 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
KR102056509B1 (ko) * 2012-07-13 2019-12-16 호야 가부시키가이샤 마스크 블랭크 및 위상 시프트 마스크의 제조 방법
JP6389375B2 (ja) * 2013-05-23 2018-09-12 Hoya株式会社 マスクブランクおよび転写用マスク並びにそれらの製造方法
US9726972B2 (en) 2013-09-10 2017-08-08 Hoya Corporation Mask blank, transfer mask, and method for manufacturing transfer mask
JP6264238B2 (ja) * 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
JP2016009744A (ja) * 2014-06-24 2016-01-18 凸版印刷株式会社 反射型マスクおよび反射型マスクブランク
JP6564734B2 (ja) * 2015-07-27 2019-08-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
EP3125041B1 (en) * 2015-07-27 2020-08-19 Shin-Etsu Chemical Co., Ltd. Method for preparing a photomask
JP6451561B2 (ja) * 2015-09-03 2019-01-16 信越化学工業株式会社 フォトマスクブランク
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
US10816891B2 (en) * 2016-12-14 2020-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Photomask and fabrication method therefor
WO2018181891A1 (ja) * 2017-03-31 2018-10-04 凸版印刷株式会社 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法
US10553428B2 (en) 2017-08-22 2020-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Reflection mode photomask and fabrication method therefore
US11086211B2 (en) * 2017-11-08 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. Masks and methods of forming the same
US10739671B2 (en) * 2017-11-10 2020-08-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing phase shift photo masks
JP7219010B2 (ja) * 2018-03-30 2023-02-07 株式会社トッパンフォトマスク 位相シフトマスクブランク
JP2020013100A (ja) * 2018-07-13 2020-01-23 エスアンドエス テック カンパニー リミテッド ブランクマスク、フォトマスク及びその製造方法
JP7420586B2 (ja) * 2019-03-28 2024-01-23 Hoya株式会社 フォトマスク、フォトマスクの製造方法、および表示装置の製造方法
WO2022069019A1 (en) * 2020-09-29 2022-04-07 Carl Zeiss Smt Gmbh Method to produce a structured transmissive optical element
KR102495225B1 (ko) * 2021-12-15 2023-02-06 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
WO2023120026A1 (ja) * 2021-12-23 2023-06-29 Hoya株式会社 マスクブランク、転写用マスクの製造方法、および半導体デバイスの製造方法
CN117872671A (zh) * 2023-12-15 2024-04-12 广州新锐光掩模科技有限公司 调整相移掩模版相位差和穿透率的方法及系统
CN119310793B (zh) * 2024-11-08 2025-12-09 合光光掩模科技(安徽)有限公司 一种掩模板的制作方法及掩模板

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Also Published As

Publication number Publication date
DE102009014610A1 (de) 2009-10-01
KR20150037796A (ko) 2015-04-08
TWI457694B (zh) 2014-10-21
US20110250529A1 (en) 2011-10-13
US8293435B2 (en) 2012-10-23
KR101586344B1 (ko) 2016-01-18
US20090246645A1 (en) 2009-10-01
TW201001059A (en) 2010-01-01
JP2009244793A (ja) 2009-10-22
KR20090104732A (ko) 2009-10-06
JP5345333B2 (ja) 2013-11-20
US7989122B2 (en) 2011-08-02

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