KR101525301B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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KR101525301B1
KR101525301B1 KR1020130014275A KR20130014275A KR101525301B1 KR 101525301 B1 KR101525301 B1 KR 101525301B1 KR 1020130014275 A KR1020130014275 A KR 1020130014275A KR 20130014275 A KR20130014275 A KR 20130014275A KR 101525301 B1 KR101525301 B1 KR 101525301B1
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plasma
exposure time
pulse
frequency power
photodetector
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Korean (ko)
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KR20140063365A (ko
Inventor
요지 안도
데쯔오 오노
다떼히또 우수이
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가부시키가이샤 히다치 하이테크놀로지즈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020130014275A 2012-11-15 2013-02-08 플라즈마 처리 장치 및 플라즈마 처리 방법 Active KR101525301B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-250789 2012-11-15
JP2012250789A JP5883769B2 (ja) 2012-11-15 2012-11-15 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20140063365A KR20140063365A (ko) 2014-05-27
KR101525301B1 true KR101525301B1 (ko) 2015-06-02

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ID=50680676

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Application Number Title Priority Date Filing Date
KR1020130014275A Active KR101525301B1 (ko) 2012-11-15 2013-02-08 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
US (1) US20140131314A1 (enExample)
JP (1) JP5883769B2 (enExample)
KR (1) KR101525301B1 (enExample)
CN (1) CN103811249B (enExample)
TW (1) TWI482960B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9865439B2 (en) * 2015-01-19 2018-01-09 Hitachi High-Technologies Corporation Plasma processing apparatus
JP6837886B2 (ja) * 2017-03-21 2021-03-03 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
JP6616382B2 (ja) * 2017-11-09 2019-12-04 本田技研工業株式会社 粉面平坦化方法及び粉体樹脂塗装装置
CN108566717B (zh) * 2018-06-29 2024-07-02 合肥中科离子医学技术装备有限公司 采用微波垂直注入激励等离子体发生装置
KR102437091B1 (ko) * 2020-08-14 2022-08-26 한국기계연구원 플라즈마 화학기상증착 공정의 실시간 제어 방법 및 플라즈마 화학기상증착용 반응 챔버
CN113394091A (zh) * 2021-05-10 2021-09-14 上海华力集成电路制造有限公司 干法刻蚀射频放电增强方法和干法刻蚀设备
KR102764215B1 (ko) * 2021-10-06 2025-02-07 이승주 자동 차량 방향 전환장치
KR102907019B1 (ko) 2021-12-17 2026-01-02 삼성전자주식회사 플라즈마 공정 챔버의 화학종을 진단하는 진단 장치, 그것을 포함하는 화학종 진단 시스템 및 그것의 동작 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021856A (ja) * 1998-06-30 2000-01-21 Hamamatsu Photonics Kk 半導体製造条件設定方法、半導体製造条件設定装置、この装置を用いた半導体製造装置、及びこの半導体製造装置により製造された半導体基板
KR20020020979A (ko) * 2000-09-12 2002-03-18 가나이 쓰도무 플라즈마환경의 동적 감지를 사용하는 플라즈마처리방법및 장치
JP2002270574A (ja) * 2001-03-07 2002-09-20 Hitachi Kokusai Electric Inc プラズマエッチング装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03149815A (ja) * 1989-11-06 1991-06-26 Mitsubishi Electric Corp マグネトロンｒｉｅ装置
JP2956991B2 (ja) * 1990-07-20 1999-10-04 東京エレクトロン株式会社 プラズマ処理終点検出装置及び検出方法
DE4122452C2 (de) * 1991-07-06 1993-10-28 Schott Glaswerke Verfahren und Vorrichtung zum Zünden von CVD-Plasmen
JPH06216080A (ja) * 1993-01-13 1994-08-05 Matsushita Electric Ind Co Ltd ドライエッチング終点検出装置
JPH0992491A (ja) * 1995-09-28 1997-04-04 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
JP4574422B2 (ja) * 2001-11-29 2010-11-04 株式会社日立ハイテクノロジーズ 発光分光処理装置
US20050011611A1 (en) * 2002-07-12 2005-01-20 Mahoney Leonard J. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
JP2004179669A (ja) * 2003-12-08 2004-06-24 Hitachi Ltd プラズマ処理装置及び処理方法
CN1973363B (zh) * 2004-06-21 2011-09-14 东京毅力科创株式会社 等离子体处理装置和方法
US8247315B2 (en) * 2008-03-17 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method for manufacturing semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021856A (ja) * 1998-06-30 2000-01-21 Hamamatsu Photonics Kk 半導体製造条件設定方法、半導体製造条件設定装置、この装置を用いた半導体製造装置、及びこの半導体製造装置により製造された半導体基板
KR20020020979A (ko) * 2000-09-12 2002-03-18 가나이 쓰도무 플라즈마환경의 동적 감지를 사용하는 플라즈마처리방법및 장치
JP2002270574A (ja) * 2001-03-07 2002-09-20 Hitachi Kokusai Electric Inc プラズマエッチング装置

Also Published As

Publication number Publication date
TWI482960B (zh) 2015-05-01
JP2014099336A (ja) 2014-05-29
TW201418699A (zh) 2014-05-16
CN103811249B (zh) 2016-09-07
CN103811249A (zh) 2014-05-21
US20140131314A1 (en) 2014-05-15
JP5883769B2 (ja) 2016-03-15
KR20140063365A (ko) 2014-05-27

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