KR101472769B1 - 집적 회로의 1회 프로그램 가능 엘리먼트 시스템 - Google Patents
집적 회로의 1회 프로그램 가능 엘리먼트 시스템 Download PDFInfo
- Publication number
- KR101472769B1 KR101472769B1 KR1020097025412A KR20097025412A KR101472769B1 KR 101472769 B1 KR101472769 B1 KR 101472769B1 KR 1020097025412 A KR1020097025412 A KR 1020097025412A KR 20097025412 A KR20097025412 A KR 20097025412A KR 101472769 B1 KR101472769 B1 KR 101472769B1
- Authority
- KR
- South Korea
- Prior art keywords
- circuit
- memory array
- circuits
- programmable
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/759,028 | 2007-06-06 | ||
| US11/759,028 US7573762B2 (en) | 2007-06-06 | 2007-06-06 | One time programmable element system in an integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20100028030A KR20100028030A (ko) | 2010-03-11 |
| KR101472769B1 true KR101472769B1 (ko) | 2014-12-15 |
Family
ID=40095764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097025412A Active KR101472769B1 (ko) | 2007-06-06 | 2008-05-19 | 집적 회로의 1회 프로그램 가능 엘리먼트 시스템 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7573762B2 (enExample) |
| JP (1) | JP2010529677A (enExample) |
| KR (1) | KR101472769B1 (enExample) |
| TW (1) | TWI492236B (enExample) |
| WO (1) | WO2008154127A1 (enExample) |
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US8060770B2 (en) * | 2005-11-02 | 2011-11-15 | Freescale Semiconductor, Inc. | Method and system for clock skew reduction in clock trees |
| US20090031103A1 (en) * | 2007-07-24 | 2009-01-29 | Via Technologies | Mechanism for implementing a microcode patch during fabrication |
| US20090031090A1 (en) * | 2007-07-24 | 2009-01-29 | Via Technologies | Apparatus and method for fast one-to-many microcode patch |
| US20090031121A1 (en) * | 2007-07-24 | 2009-01-29 | Via Technologies | Apparatus and method for real-time microcode patch |
| US20090031107A1 (en) * | 2007-07-24 | 2009-01-29 | Via Technologies | On-chip memory providing for microcode patch overlay and constant update functions |
| US20090031110A1 (en) * | 2007-07-24 | 2009-01-29 | Via Technologies | Microcode patch expansion mechanism |
| US20090031108A1 (en) * | 2007-07-24 | 2009-01-29 | Via Technologies | Configurable fuse mechanism for implementing microcode patches |
| US20090031109A1 (en) * | 2007-07-24 | 2009-01-29 | Via Technologies | Apparatus and method for fast microcode patch from memory |
| US8315117B2 (en) * | 2009-03-31 | 2012-11-20 | Freescale Semiconductor, Inc. | Integrated circuit memory having assisted access and method therefor |
| US8379466B2 (en) | 2009-03-31 | 2013-02-19 | Freescale Semiconductor, Inc. | Integrated circuit having an embedded memory and method for testing the memory |
| TW201039088A (en) | 2009-04-24 | 2010-11-01 | Grenergy Opto Inc | System corrected programmable integrated circuit |
| US8634263B2 (en) * | 2009-04-30 | 2014-01-21 | Freescale Semiconductor, Inc. | Integrated circuit having memory repair information storage and method therefor |
| US9378443B2 (en) | 2009-05-14 | 2016-06-28 | Ascensia Diabetes Care Holding Ag | Calibration coded sensors and apparatus, systems and methods for reading same |
| US9224496B2 (en) | 2010-08-11 | 2015-12-29 | Shine C. Chung | Circuit and system of aggregated area anti-fuse in CMOS processes |
| US10229746B2 (en) | 2010-08-20 | 2019-03-12 | Attopsemi Technology Co., Ltd | OTP memory with high data security |
| US9025357B2 (en) | 2010-08-20 | 2015-05-05 | Shine C. Chung | Programmable resistive memory unit with data and reference cells |
| US9236141B2 (en) | 2010-08-20 | 2016-01-12 | Shine C. Chung | Circuit and system of using junction diode of MOS as program selector for programmable resistive devices |
| US9042153B2 (en) | 2010-08-20 | 2015-05-26 | Shine C. Chung | Programmable resistive memory unit with multiple cells to improve yield and reliability |
| US10923204B2 (en) | 2010-08-20 | 2021-02-16 | Attopsemi Technology Co., Ltd | Fully testible OTP memory |
| US10916317B2 (en) | 2010-08-20 | 2021-02-09 | Attopsemi Technology Co., Ltd | Programmable resistance memory on thin film transistor technology |
| US9496033B2 (en) | 2010-08-20 | 2016-11-15 | Attopsemi Technology Co., Ltd | Method and system of programmable resistive devices with read capability using a low supply voltage |
| US8830720B2 (en) | 2010-08-20 | 2014-09-09 | Shine C. Chung | Circuit and system of using junction diode as program selector and MOS as read selector for one-time programmable devices |
| US8649203B2 (en) | 2010-08-20 | 2014-02-11 | Shine C. Chung | Reversible resistive memory using polysilicon diodes as program selectors |
| US9070437B2 (en) | 2010-08-20 | 2015-06-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink |
| US9019742B2 (en) | 2010-08-20 | 2015-04-28 | Shine C. Chung | Multiple-state one-time programmable (OTP) memory to function as multi-time programmable (MTP) memory |
| US9711237B2 (en) | 2010-08-20 | 2017-07-18 | Attopsemi Technology Co., Ltd. | Method and structure for reliable electrical fuse programming |
| US9251893B2 (en) | 2010-08-20 | 2016-02-02 | Shine C. Chung | Multiple-bit programmable resistive memory using diode as program selector |
| US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
| US9460807B2 (en) | 2010-08-20 | 2016-10-04 | Shine C. Chung | One-time programmable memory devices using FinFET technology |
| US8488359B2 (en) | 2010-08-20 | 2013-07-16 | Shine C. Chung | Circuit and system of using junction diode as program selector for one-time programmable devices |
| US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
| US9824768B2 (en) | 2015-03-22 | 2017-11-21 | Attopsemi Technology Co., Ltd | Integrated OTP memory for providing MTP memory |
| US9431127B2 (en) | 2010-08-20 | 2016-08-30 | Shine C. Chung | Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices |
| US8913449B2 (en) * | 2012-03-11 | 2014-12-16 | Shine C. Chung | System and method of in-system repairs or configurations for memories |
| US8988965B2 (en) | 2010-11-03 | 2015-03-24 | Shine C. Chung | Low-pin-count non-volatile memory interface |
| US9019791B2 (en) | 2010-11-03 | 2015-04-28 | Shine C. Chung | Low-pin-count non-volatile memory interface for 3D IC |
| US9076513B2 (en) | 2010-11-03 | 2015-07-07 | Shine C. Chung | Low-pin-count non-volatile memory interface with soft programming capability |
| US9632055B2 (en) * | 2010-11-12 | 2017-04-25 | Ascensia Diabetes Care Holdings Ag | Auto-coded analyte sensors and apparatus, systems, and methods for detecting same |
| JP2012109403A (ja) * | 2010-11-17 | 2012-06-07 | Elpida Memory Inc | 半導体装置及びその制御方法 |
| US8737138B2 (en) * | 2010-11-18 | 2014-05-27 | Micron Technology, Inc. | Memory instruction including parameter to affect operating condition of memory |
| TWI478168B (zh) | 2010-12-08 | 2015-03-21 | 莊建祥 | 反熔絲記憶體及電子系統 |
| US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
| US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
| US8848423B2 (en) | 2011-02-14 | 2014-09-30 | Shine C. Chung | Circuit and system of using FinFET for building programmable resistive devices |
| US9324849B2 (en) | 2011-11-15 | 2016-04-26 | Shine C. Chung | Structures and techniques for using semiconductor body to construct SCR, DIAC, or TRIAC |
| US9136261B2 (en) | 2011-11-15 | 2015-09-15 | Shine C. Chung | Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection |
| US8912576B2 (en) | 2011-11-15 | 2014-12-16 | Shine C. Chung | Structures and techniques for using semiconductor body to construct bipolar junction transistors |
| US8861249B2 (en) | 2012-02-06 | 2014-10-14 | Shine C. Chung | Circuit and system of a low density one-time programmable memory |
| US8917533B2 (en) | 2012-02-06 | 2014-12-23 | Shine C. Chung | Circuit and system for testing a one-time programmable (OTP) memory |
| US9007804B2 (en) | 2012-02-06 | 2015-04-14 | Shine C. Chung | Circuit and system of protective mechanisms for programmable resistive memories |
| US9076526B2 (en) | 2012-09-10 | 2015-07-07 | Shine C. Chung | OTP memories functioning as an MTP memory |
| US9183897B2 (en) | 2012-09-30 | 2015-11-10 | Shine C. Chung | Circuits and methods of a self-timed high speed SRAM |
| US9324447B2 (en) | 2012-11-20 | 2016-04-26 | Shine C. Chung | Circuit and system for concurrently programming multiple bits of OTP memory devices |
| KR20140078292A (ko) * | 2012-12-17 | 2014-06-25 | 에스케이하이닉스 주식회사 | 퓨즈 리페어 장치 및 그 방법 |
| US9922720B2 (en) | 2013-03-07 | 2018-03-20 | Intel Corporation | Random fuse sensing |
| US8923030B2 (en) * | 2013-03-07 | 2014-12-30 | Intel Corporation | On-die programmable fuses |
| US9489263B2 (en) | 2014-01-09 | 2016-11-08 | Sandisk Technologies Llc | Selective ECC refresh for on die buffered non-volatile memory |
| US10699796B2 (en) | 2014-05-27 | 2020-06-30 | Hewlett Packard Enterprise Development Lp | Validation of a repair to a selected row of data |
| US9412473B2 (en) | 2014-06-16 | 2016-08-09 | Shine C. Chung | System and method of a novel redundancy scheme for OTP |
| KR20160005988A (ko) * | 2014-07-08 | 2016-01-18 | 에스케이하이닉스 주식회사 | 반도체 장치의 어레이 퓨즈 테스트 방법 |
| JP6356544B2 (ja) * | 2014-09-04 | 2018-07-11 | Necプラットフォームズ株式会社 | 情報処理装置、メモリ検査方法及びプログラム |
| US9778863B2 (en) * | 2014-09-30 | 2017-10-03 | Sandisk Technologies Llc | System and method for folding partial blocks into multi-level cell memory blocks |
| WO2017030564A1 (en) | 2015-08-18 | 2017-02-23 | Hewlett Packard Enterprise Development Lp | Post package repair for mapping to a memory failure pattern |
| JP6621389B2 (ja) * | 2016-08-22 | 2019-12-18 | 株式会社東芝 | アナログ半導体集積回路 |
| EP3389063A1 (en) | 2017-04-13 | 2018-10-17 | Comet AG | Variable vacuum capacitor and cooling method |
| US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
| US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
| US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
| US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
| US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
| US10600496B1 (en) | 2018-10-18 | 2020-03-24 | Micron Technology, Inc. | Modifying memory bank operating parameters |
| US11138107B2 (en) | 2020-02-20 | 2021-10-05 | Micron Technology, Inc. | Modifying subsets of memory bank operating parameters |
| US11152052B1 (en) * | 2020-06-03 | 2021-10-19 | Micron Technology, Inc. | Apparatuses, systems, and methods for fuse array based device identification |
| US11222707B1 (en) | 2020-12-31 | 2022-01-11 | Nxp Usa, Inc. | Utilization of control fuses for functional operations in system-on-chips |
| US12483429B2 (en) | 2021-06-01 | 2025-11-25 | Attopsemi Technology Co., Ltd | Physically unclonable function produced using OTP memory |
| US12462890B2 (en) * | 2022-11-18 | 2025-11-04 | PUFsecurity Corporation | Method for operating a memory device and memory device thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5745011A (en) * | 1996-06-05 | 1998-04-28 | Cypress Semiconductor Corporation | Data recovery phase locked loop |
| US20060083095A1 (en) * | 2004-10-14 | 2006-04-20 | Broadcom Corporation | Integrated circuit chip having non-volatile on-chip memories for providing programmable functions and features |
| US7286000B1 (en) * | 2005-12-28 | 2007-10-23 | Hynix Semiconductor Inc. | Semiconductor device |
| US20080065929A1 (en) * | 2006-09-11 | 2008-03-13 | Logicvision, Inc. | Method and apparatus for storing and distributing memory repair information |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0831279B2 (ja) * | 1990-12-20 | 1996-03-27 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 冗長システム |
| US6260104B1 (en) * | 1998-06-30 | 2001-07-10 | Micron Technology, Inc. | Multiplexing of trim outputs on a trim bus to reduce die size |
| US6205063B1 (en) * | 1998-08-26 | 2001-03-20 | International Business Machines Corporation | Apparatus and method for efficiently correcting defects in memory circuits |
| JP3688899B2 (ja) * | 1998-09-08 | 2005-08-31 | 株式会社東芝 | 半導体集積回路装置 |
| US20050269666A1 (en) * | 2004-06-07 | 2005-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrical fuses as programmable data storage |
| US6249465B1 (en) * | 2000-02-18 | 2001-06-19 | Hewlett-Packard Company | Redundancy programming using addressable scan paths to reduce the number of required fuses |
| US6813735B1 (en) * | 2000-10-02 | 2004-11-02 | Fasl, Llc. | I/O based column redundancy for virtual ground with 2-bit cell flash memory |
| JP4265218B2 (ja) * | 2001-05-17 | 2009-05-20 | ダイキン工業株式会社 | 含フッ素ポリマーを含んでなる非線形光学材料 |
| DE10155620C2 (de) * | 2001-11-13 | 2003-09-18 | Infineon Technologies Ag | Schaltungsvorrichtung |
| JP2003233999A (ja) * | 2002-02-07 | 2003-08-22 | Hitachi Ltd | 半導体集積回路及び半導体集積回路の製造方法 |
| US7312109B2 (en) * | 2002-07-08 | 2007-12-25 | Viciciv, Inc. | Methods for fabricating fuse programmable three dimensional integrated circuits |
| US7174486B2 (en) * | 2002-11-22 | 2007-02-06 | International Business Machines Corporation | Automation of fuse compression for an ASIC design system |
| KR100505702B1 (ko) * | 2003-08-20 | 2005-08-02 | 삼성전자주식회사 | 웨이퍼 테스트와 포스트 패키지 테스트에서 선택적으로프로그램 가능한 반도체 메모리 장치의 리페어 장치 및 그리페어 방법 |
-
2007
- 2007-06-06 US US11/759,028 patent/US7573762B2/en active Active
-
2008
- 2008-05-19 WO PCT/US2008/064111 patent/WO2008154127A1/en not_active Ceased
- 2008-05-19 KR KR1020097025412A patent/KR101472769B1/ko active Active
- 2008-05-19 JP JP2010511240A patent/JP2010529677A/ja active Pending
- 2008-05-29 TW TW097119936A patent/TWI492236B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5745011A (en) * | 1996-06-05 | 1998-04-28 | Cypress Semiconductor Corporation | Data recovery phase locked loop |
| US20060083095A1 (en) * | 2004-10-14 | 2006-04-20 | Broadcom Corporation | Integrated circuit chip having non-volatile on-chip memories for providing programmable functions and features |
| US7286000B1 (en) * | 2005-12-28 | 2007-10-23 | Hynix Semiconductor Inc. | Semiconductor device |
| US20080065929A1 (en) * | 2006-09-11 | 2008-03-13 | Logicvision, Inc. | Method and apparatus for storing and distributing memory repair information |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI492236B (zh) | 2015-07-11 |
| TW200905691A (en) | 2009-02-01 |
| US7573762B2 (en) | 2009-08-11 |
| US20080304347A1 (en) | 2008-12-11 |
| WO2008154127A1 (en) | 2008-12-18 |
| JP2010529677A (ja) | 2010-08-26 |
| KR20100028030A (ko) | 2010-03-11 |
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