KR101453565B1 - 화학적 기계적 연마 방법 - Google Patents

화학적 기계적 연마 방법 Download PDF

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Publication number
KR101453565B1
KR101453565B1 KR1020080080163A KR20080080163A KR101453565B1 KR 101453565 B1 KR101453565 B1 KR 101453565B1 KR 1020080080163 A KR1020080080163 A KR 1020080080163A KR 20080080163 A KR20080080163 A KR 20080080163A KR 101453565 B1 KR101453565 B1 KR 101453565B1
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KR
South Korea
Prior art keywords
polishing
polishing pad
shape memory
substrate
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080080163A
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English (en)
Korean (ko)
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KR20090018010A (ko
Inventor
그레고리 피. 멀다우니
라비찬드라 브이. 팔라파티
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
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Filing date
Publication date
Priority claimed from US11/838,954 external-priority patent/US7458885B1/en
Priority claimed from US12/103,232 external-priority patent/US8257142B2/en
Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드
Publication of KR20090018010A publication Critical patent/KR20090018010A/ko
Application granted granted Critical
Publication of KR101453565B1 publication Critical patent/KR101453565B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020080080163A 2007-08-15 2008-08-14 화학적 기계적 연마 방법 Expired - Fee Related KR101453565B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/838,954 2007-08-15
US11/838,954 US7458885B1 (en) 2007-08-15 2007-08-15 Chemical mechanical polishing pad and methods of making and using same
US12/103,232 2008-04-15
US12/103,232 US8257142B2 (en) 2008-04-15 2008-04-15 Chemical mechanical polishing method

Publications (2)

Publication Number Publication Date
KR20090018010A KR20090018010A (ko) 2009-02-19
KR101453565B1 true KR101453565B1 (ko) 2014-10-21

Family

ID=40032701

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080080163A Expired - Fee Related KR101453565B1 (ko) 2007-08-15 2008-08-14 화학적 기계적 연마 방법

Country Status (4)

Country Link
EP (1) EP2025455A3 (enExample)
JP (1) JP5226427B2 (enExample)
KR (1) KR101453565B1 (enExample)
TW (1) TWI444248B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
US9754846B2 (en) * 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
WO2016048043A1 (ko) * 2014-09-23 2016-03-31 영창케미칼 주식회사 화학적 기계적 연마용 연마패드의 그루브 측정 장치 및 이를 포함하는 화학적 기계적 연마 장치
US9873180B2 (en) * 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
KR102640690B1 (ko) * 2015-09-25 2024-02-23 씨엠씨 머티리얼즈 엘엘씨 높은 탄성률 비를 갖는 폴리우레탄 화학 기계적 연마 패드

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03182283A (ja) * 1989-12-08 1991-08-08 Ace Denken:Kk 研磨装置および研磨方法
JPH08323614A (ja) * 1995-05-30 1996-12-10 Sony Corp 化学的機械研磨方法および装置
JP2003068686A (ja) 2001-06-15 2003-03-07 Ebara Corp ポリッシング装置及び研磨パッド並びにその製造方法
JP2007510650A (ja) 2003-11-04 2007-04-26 ボストン サイエンティフィック リミテッド ポリマー粒子および放射線不透過性材料からなる塞栓組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU758800B2 (en) * 1998-02-23 2003-03-27 Gkss-Forschungszentrum Geesthacht Gmbh Shape memory polymers
JP2000344902A (ja) * 1999-06-04 2000-12-12 Fuji Spinning Co Ltd 研磨パッド用ウレタン成形物の製造法及び研磨パッド用ウレタン成形物
US7235488B2 (en) * 2002-08-28 2007-06-26 Micron Technology, Inc. In-situ chemical-mechanical planarization pad metrology using ultrasonic imaging
US20060286906A1 (en) * 2005-06-21 2006-12-21 Cabot Microelectronics Corporation Polishing pad comprising magnetically sensitive particles and method for the use thereof
US8192257B2 (en) 2006-04-06 2012-06-05 Micron Technology, Inc. Method of manufacture of constant groove depth pads

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03182283A (ja) * 1989-12-08 1991-08-08 Ace Denken:Kk 研磨装置および研磨方法
JPH08323614A (ja) * 1995-05-30 1996-12-10 Sony Corp 化学的機械研磨方法および装置
JP2003068686A (ja) 2001-06-15 2003-03-07 Ebara Corp ポリッシング装置及び研磨パッド並びにその製造方法
JP2007510650A (ja) 2003-11-04 2007-04-26 ボストン サイエンティフィック リミテッド ポリマー粒子および放射線不透過性材料からなる塞栓組成物

Also Published As

Publication number Publication date
EP2025455A2 (en) 2009-02-18
TW200914200A (en) 2009-04-01
JP2009045736A (ja) 2009-03-05
TWI444248B (zh) 2014-07-11
JP5226427B2 (ja) 2013-07-03
KR20090018010A (ko) 2009-02-19
EP2025455A3 (en) 2017-04-26

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