JP5226427B2 - 化学機械研磨方法 - Google Patents

化学機械研磨方法 Download PDF

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Publication number
JP5226427B2
JP5226427B2 JP2008209143A JP2008209143A JP5226427B2 JP 5226427 B2 JP5226427 B2 JP 5226427B2 JP 2008209143 A JP2008209143 A JP 2008209143A JP 2008209143 A JP2008209143 A JP 2008209143A JP 5226427 B2 JP5226427 B2 JP 5226427B2
Authority
JP
Japan
Prior art keywords
polishing
polishing pad
shape memory
substrate
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008209143A
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English (en)
Japanese (ja)
Other versions
JP2009045736A5 (enExample
JP2009045736A (ja
Inventor
グレゴリー・ピー・ムルダウニー
ラビチャンドラ・ブイ・パラパルティ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
DuPont Electronic Materials Holding Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/838,954 external-priority patent/US7458885B1/en
Priority claimed from US12/103,232 external-priority patent/US8257142B2/en
Application filed by DuPont Electronic Materials Holding Inc filed Critical DuPont Electronic Materials Holding Inc
Publication of JP2009045736A publication Critical patent/JP2009045736A/ja
Publication of JP2009045736A5 publication Critical patent/JP2009045736A5/ja
Application granted granted Critical
Publication of JP5226427B2 publication Critical patent/JP5226427B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2008209143A 2007-08-15 2008-08-15 化学機械研磨方法 Expired - Fee Related JP5226427B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/838,954 2007-08-15
US11/838,954 US7458885B1 (en) 2007-08-15 2007-08-15 Chemical mechanical polishing pad and methods of making and using same
US12/103,232 2008-04-15
US12/103,232 US8257142B2 (en) 2008-04-15 2008-04-15 Chemical mechanical polishing method

Publications (3)

Publication Number Publication Date
JP2009045736A JP2009045736A (ja) 2009-03-05
JP2009045736A5 JP2009045736A5 (enExample) 2011-10-06
JP5226427B2 true JP5226427B2 (ja) 2013-07-03

Family

ID=40032701

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008209143A Expired - Fee Related JP5226427B2 (ja) 2007-08-15 2008-08-15 化学機械研磨方法

Country Status (4)

Country Link
EP (1) EP2025455A3 (enExample)
JP (1) JP5226427B2 (enExample)
KR (1) KR101453565B1 (enExample)
TW (1) TWI444248B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016048043A1 (ko) * 2014-09-23 2016-03-31 영창케미칼 주식회사 화학적 기계적 연마용 연마패드의 그루브 측정 장치 및 이를 포함하는 화학적 기계적 연마 장치

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9144880B2 (en) * 2012-11-01 2015-09-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Soft and conditionable chemical mechanical polishing pad
US9754846B2 (en) * 2014-06-23 2017-09-05 Applied Materials, Inc. Inductive monitoring of conductive trench depth
US9873180B2 (en) * 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
KR102640690B1 (ko) * 2015-09-25 2024-02-23 씨엠씨 머티리얼즈 엘엘씨 높은 탄성률 비를 갖는 폴리우레탄 화학 기계적 연마 패드

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2668273B2 (ja) * 1989-12-08 1997-10-27 株式会社エース電研 研磨装置および研磨方法
JPH08323614A (ja) * 1995-05-30 1996-12-10 Sony Corp 化学的機械研磨方法および装置
AU758800B2 (en) * 1998-02-23 2003-03-27 Gkss-Forschungszentrum Geesthacht Gmbh Shape memory polymers
JP2000344902A (ja) * 1999-06-04 2000-12-12 Fuji Spinning Co Ltd 研磨パッド用ウレタン成形物の製造法及び研磨パッド用ウレタン成形物
JP4131632B2 (ja) 2001-06-15 2008-08-13 株式会社荏原製作所 ポリッシング装置及び研磨パッド
US7235488B2 (en) * 2002-08-28 2007-06-26 Micron Technology, Inc. In-situ chemical-mechanical planarization pad metrology using ultrasonic imaging
US7901770B2 (en) 2003-11-04 2011-03-08 Boston Scientific Scimed, Inc. Embolic compositions
US20060286906A1 (en) * 2005-06-21 2006-12-21 Cabot Microelectronics Corporation Polishing pad comprising magnetically sensitive particles and method for the use thereof
US8192257B2 (en) 2006-04-06 2012-06-05 Micron Technology, Inc. Method of manufacture of constant groove depth pads

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016048043A1 (ko) * 2014-09-23 2016-03-31 영창케미칼 주식회사 화학적 기계적 연마용 연마패드의 그루브 측정 장치 및 이를 포함하는 화학적 기계적 연마 장치

Also Published As

Publication number Publication date
EP2025455A2 (en) 2009-02-18
TW200914200A (en) 2009-04-01
JP2009045736A (ja) 2009-03-05
TWI444248B (zh) 2014-07-11
KR20090018010A (ko) 2009-02-19
EP2025455A3 (en) 2017-04-26
KR101453565B1 (ko) 2014-10-21

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