KR101435866B1 - 기판 처리 장치 및 반도체 장치의 제조 방법 - Google Patents

기판 처리 장치 및 반도체 장치의 제조 방법 Download PDF

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KR101435866B1
KR101435866B1 KR1020130016322A KR20130016322A KR101435866B1 KR 101435866 B1 KR101435866 B1 KR 101435866B1 KR 1020130016322 A KR1020130016322 A KR 1020130016322A KR 20130016322 A KR20130016322 A KR 20130016322A KR 101435866 B1 KR101435866 B1 KR 101435866B1
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South Korea
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substrate
gas
processing chamber
processing
wafer
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Korean (ko)
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KR20130095226A (ko
Inventor
야스토시 츠보타
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가부시키가이샤 히다치 고쿠사이 덴키
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Assigned to 가부시키가이샤 코쿠사이 엘렉트릭 reassignment 가부시키가이샤 코쿠사이 엘렉트릭 권리의 전부이전등록 Assignors: 가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020130016322A 2012-02-17 2013-02-15 기판 처리 장치 및 반도체 장치의 제조 방법 Active KR101435866B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012032682A JP6066571B2 (ja) 2012-02-17 2012-02-17 基板処理装置及び半導体装置の製造方法
JPJP-P-2012-032682 2012-02-17

Publications (2)

Publication Number Publication Date
KR20130095226A KR20130095226A (ko) 2013-08-27
KR101435866B1 true KR101435866B1 (ko) 2014-09-01

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KR1020130016322A Active KR101435866B1 (ko) 2012-02-17 2013-02-15 기판 처리 장치 및 반도체 장치의 제조 방법

Country Status (3)

Country Link
US (1) US9147573B2 (https=)
JP (1) JP6066571B2 (https=)
KR (1) KR101435866B1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018052476A1 (en) 2016-09-14 2018-03-22 Applied Materials, Inc. Steam oxidation initiation for high aspect ratio conformal radical oxidation
US20240360996A1 (en) * 2023-04-25 2024-10-31 Applied Materials, Inc. Orifice surrounded low pressure hydroxyl combustion
US12559841B2 (en) 2023-04-25 2026-02-24 Applied Materials, Inc. Plenum driven hydroxyl combustion oxidation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002008999A (ja) * 2000-06-23 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
JP2008091667A (ja) * 2006-10-03 2008-04-17 Hitachi Kokusai Electric Inc 基板処理方法
KR100900073B1 (ko) * 2005-03-16 2009-05-28 가부시키가이샤 히다치 고쿠사이 덴키 기판처리방법 및 기판처리장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4669605B2 (ja) * 2000-11-20 2011-04-13 東京エレクトロン株式会社 半導体製造装置のクリーニング方法
US6559039B2 (en) * 2001-05-15 2003-05-06 Applied Materials, Inc. Doped silicon deposition process in resistively heated single wafer chamber
JP2004128019A (ja) * 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
JP4829013B2 (ja) 2006-06-14 2011-11-30 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP4961179B2 (ja) * 2006-08-08 2012-06-27 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US8083963B2 (en) * 2007-02-08 2011-12-27 Applied Materials, Inc. Removal of process residues on the backside of a substrate
JP5564311B2 (ja) * 2009-05-19 2014-07-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び基板の製造方法
JP5396180B2 (ja) * 2009-07-27 2014-01-22 東京エレクトロン株式会社 選択酸化処理方法、選択酸化処理装置およびコンピュータ読み取り可能な記憶媒体
JP5548163B2 (ja) * 2010-09-14 2014-07-16 株式会社日立国際電気 基板搬送機構、基板処理装置および半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002008999A (ja) * 2000-06-23 2002-01-11 Mitsubishi Electric Corp 半導体装置の製造方法
KR100900073B1 (ko) * 2005-03-16 2009-05-28 가부시키가이샤 히다치 고쿠사이 덴키 기판처리방법 및 기판처리장치
JP2008091667A (ja) * 2006-10-03 2008-04-17 Hitachi Kokusai Electric Inc 基板処理方法

Also Published As

Publication number Publication date
US20140057456A1 (en) 2014-02-27
US9147573B2 (en) 2015-09-29
KR20130095226A (ko) 2013-08-27
JP6066571B2 (ja) 2017-01-25
JP2013171843A (ja) 2013-09-02

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