KR101423852B1 - Composite metal layer provided with supporting body metal foil, wiring board using the composite metal layer, method for manufacturing the wiring board, and method for manufacturing semiconductor package using the wiring board - Google Patents

Abstract

A composite metal layer with a support metal foil, a wiring board using the composite metal layer, a manufacturing method thereof, and a manufacturing method of a semiconductor package using the wiring board are provided. A composite metal layer with a support metal foil in which a plurality of metal layers composed of a metal layer of a support metal and a metal layer of two or more layers are laminated via a release layer between adjacent metal layers, The peel strength between the metal layer A and the adjacent metal layer B via the peeling layer on the upper surface is higher than the peel strength between the metal layer A and the adjacent metal layer C , A method for manufacturing the wiring board using the same, and a method for manufacturing a semiconductor package using the wiring board.

Description

TECHNICAL FIELD The present invention relates to a composite metal layer with a metal foil, a wiring board using the metal foil, a method of manufacturing the same, and a method of manufacturing a semiconductor package using the wiring board. BACKGROUND OF THE INVENTION METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE USING THE WIRING BOARD}

The present invention relates to a composite metal layer with a support metal foil suitable for a method of manufacturing a printed wiring board by a transfer method, a wiring board using the same, a manufacturing method thereof, and a manufacturing method of a semiconductor package using the wiring board.

As the size and high performance of the device become smaller, the area of the land for connecting the circuit elements and the width of the wiring become smaller, and the contact area between the land and the wiring and the substrate decreases. As a result, And the wiring is buried in the substrate. Various methods have been proposed as methods for embedding lands and wirings in a substrate. For example, a method has been proposed in which a conductor pattern composed of lands and wirings is formed by electroplating on a metal layer on a removable support metal foil, (Patent Document 1, Patent Document 2). On the insulating layer, a wiring layer is formed by a usual method, and the formation of the insulating layer and wiring layer is repeated as necessary, the metal layer is peeled off from the support metal foil, and this metal layer is removed by etching, Thus, a wiring board having a flat surface can be obtained. This method is called a transfer method because a conductor pattern made of a land or a wiring on a metal layer is transferred to a substrate, and the productivity is excellent, and the flatness of the obtained wiring board is excellent.

Further, a metal layer on a removable support metal foil used in the transfer method as described above is disclosed (Patent Document 3, Patent Document 4). These are formed by forming a peeling layer and a metal layer on a support metal foil. Even if heating is performed at a curing temperature of polyimide or heating and pressing by lamination for multilayering of a wiring board is carried out a plurality of times, Thereby suppressing a change in peel strength. Therefore, the support metal foil can be easily peeled off even after the heating treatment or the heating and pressing, and the peeling strength is stable, so that unexpected peeling does not occur at the time of handling and the workability is excellent.

Prior art literature

Patent literature

Patent Document 1: Reissue Patent Publication WO2007 / 077735

Patent Document 2: JP-A-2005-101137

Patent Document 3: Reissue Patent Publication WO2006 / 013735

Patent Document 4: Japanese Patent Application Laid-Open No. 2003-094553

However, as in the case of Patent Documents 1 and 2, when the conventional metal film with support metal foil is used, the support metal foil is discarded for each production of the wiring board. This support metal foil is refined after recovery as a resource and regenerated as a metal, but is not preferable as a global environment because energy is consumed.

Also, as in Patent Document 2, when a support substrate is formed by laminating an insulating layer on the metal thin-film side of the support metal foil-covered metal layer, when the resin powder of the insulating layer adheres to the surface of the metal layer exposed on the surface side of the support substrate . The metal layer exposed on the front surface side of the support substrate serves as a power supply layer (power supply layer) when the conductor pattern is formed by electroplating. Therefore, when the resin powder adhered to the metal layer forms a fine conductor pattern, , Resulting in an increase in waste.

In the wiring boards of Patent Documents 1 and 2, a conductor pattern is formed on the metal layer of the supporting substrate by pattern plating, and an insulating layer or an interlayer connection is formed thereon. Then, the supporting substrate including the supporting metal foil is physically peeled , And further the metal layer exposed after the peeling is removed by etching to form a fine conductor pattern. For this reason, unless a portion of the support metal foil as a final wiring board is peeled off, a conductor pattern is not formed and the wiring board is not completed. However, when the completed wiring board is thin and the rigidity is low, Warping may occur due to heating or weighting. Such warpage is a factor of lowering the yield of the packaging, and consequently, the possibility that the waste is increased may be considered.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a composite metal layer with a support metal foil, which is capable of producing a plurality of wiring boards using a composite metal layer with a support metal foil, It is possible to reduce the amount of wastes generated in the production of a wiring board or a semiconductor package and to provide a composite metal layer with a support metal foil suitable for the earth environment and a wiring board using the same, And a method for manufacturing a package.

The present invention relates to the following.

(1) A composite metal layer with a support metal foil in which a metal layer of the support metal foil and a plurality of metal layers of two or more metal layers are laminated via a release layer between adjacent metal layers, The peel strength between each metal layer A positioned and the adjacent metal layer B via the peel layer on the upper surface is higher than the peel strength between the metal layer A and the adjacent metal layer C Of the composite metal layer with the support metal foil.

(2) The peel strength between each metal layer (A) positioned between the lowermost metal layer and the uppermost metal layer and the adjacent metal layer (B) via the peel layer on the upper surface thereof is higher than the peel strength between the metal layer (A) (1), wherein the peel strength of the support metal foil is 5 N / m smaller than the peel strength between the metal layer (C) and the adjacent metal layer (C) via the release layer on the lower surface thereof.

(3) The support metal foil-bonded composite metal layer according to (1) or (2) above, wherein the rate of change of the peel strength between two adjacent metal layers via the release layer at 25 ° C after heating at 300 ° C for 5 hours is 25% .

(4) A method for producing a patterned metal foil, comprising the steps of: (a) performing pattern plating on a metal layer of the uppermost layer of the composite metal layer with a support metal foil according to any one of (1) (C) peeling the polyimide with the metal layer from the metal layer of the uppermost layer as the uppermost layer, (d) removing the metal layer remaining on the polyimide with the metal layer, (A) to (e) are successively repeated with respect to the uppermost layer surface of the composite metal layer with the support metal foil remaining after peeling the polyimide with the metal layer to form a conductor pattern And a plurality of wiring boards are formed.

(5) The composite metal layer with a support metal foil according to any one of (1) to (3), wherein the metal layer (C) as the support metal foil and the metal layer (A) adjacent to the metal layer (C) A step of forming a support substrate by laminating a support metal thin-film side of a support metal foil-bonded composite metal layer having an adjacent metal layer (B) with a release layer interposed between the metal layer (B) and the metal layer (A) A step of peeling the metal layer (B) from the surface of the metal layer (A) together with the release layer between the metal layer (A) and the metal layer (A) A), and forming a wiring board with a supporting substrate.

(6) The method for producing a wiring board according to (5), further comprising a step of forming a preliminary solder on the uppermost wiring layer after the step of forming the supporting board-attached wiring board.

(7) A supporting board-attached wiring board produced by the method for producing a wiring board according to (5) or (6).

(8) A method for manufacturing a semiconductor device, comprising the steps of: mounting a semiconductor element on a supporting board-attached wiring board manufactured by the method for manufacturing a wiring board according to (5) or (6) A step of peeling the support substrate together with the release layer between the metal layer (A) and the metal layer (C) while leaving the metal layer (A) of the support substrate on the side of the semiconductor package; ) Is removed to expose the pattern plating to the surface of the insulating layer to thereby form a conductor pattern.

Carrying out the invention  Form for

Since the peeling layer used in the support metal foil-bonded composite metal layer of the present invention is required not to have a peel strength change due to thermal history in the process of producing a wiring board, not only organic materials such as benzotriazole but also inorganic materials using general chromium can be used And a special release layer in which a metal such as molybdenum or tungsten and an oxide thereof are distributed while being varied in composition (composition) is preferably used. The oxide-rich layer in one release layer exhibits the peeling function, and the metal-rich layer prevents the copper diffusion, thereby stabilizing the peel strength. Further, the composition changes obliquely, thereby alleviating mismatching of the thermal expansion coefficient and contributing to stabilization of the peel strength. The thickness of the release layer is preferably 50 nm to 40 nm.

As the support metal foil, a copper foil having a thickness of 12 탆 to 105 탆 is preferable, and a copper foil having a thickness of 35 탆 to 70 탆 is particularly preferable. The copper foil may be an electrolytic copper foil or a rolled copper foil. As a metal layer other than the support metal foil (hereinafter, simply referred to as a metal layer) which is the lowermost metal layer, a copper layer having a thickness of 1 탆 to 5 탆 is preferable, and a copper layer having a thickness of 3 탆 to 5 탆 is particularly preferable. If the copper layer is thick, a long time is required for the etching, and the lands are likely to be partially etched due to unevenness, and there is a fear that the overall flatness is lost.

The composite metal layer with a support metal foil of the present invention is not particularly required to be subjected to heat resistance treatment, but it is preferable to perform stabilization treatment to prevent surface deterioration when it is stored only in the uppermost metal layer. Such treatments include waterproofing treatment with an organic matter and chromate treatment.

The peel strength between the metal layer A positioned between the lowermost metal layer and the uppermost metal layer and the metal layer B adjacent to the metal layer A via the peel layer on the upper surface is higher than the peel strength of the metal layer A, Is smaller than the peel strength between the metal layer (C) and the adjacent metal layer (C), and the difference is preferably 5 N / m to 20 N / m at the initial peel strength. If the difference is small, stable and sequential peeling can not be achieved, and peeling becomes difficult if large. Further, it is preferable that the rate of change of the peel strength between two adjacent metal layers via the peeling layer before and after heating at 300 캜 for 5 hours is 25% or less.

An example of a method for manufacturing a wiring board using the composite metal layer with a support metal foil of the present invention will be described. First, the metal oxide layer and the metal layer are formed on the support metal foil a predetermined number of times, and then the chromate treatment is performed only on the uppermost layer. After pattern plating was performed on the uppermost layer surface of the thus-formed support metal foil-bonded composite metal layer, (a) the polyimide precursor was coated with a thickness of 50 μm by washing with sulfuric acid and removing moisture from the surface, (b) And then cured at 300 DEG C for 2 hours to obtain polyimide (c). Subsequently, the metal layer-attached polyimide is peeled from the underlying metal layer (d), and the remaining metal layer is etched by the metal layer-attached polyimide to expose the pattern plating from the polyimide to form a conductor pattern (e). Next, a plurality of wiring boards are formed by sequentially repeating the above-mentioned (a) to (e) with respect to the uppermost layer surface of the remaining composite metal layer with the support metal foil after peeling the polyimide with metal layer.

Another example of the wiring board of the present invention and the method of manufacturing the semiconductor package will be described below with reference to Figs. 1 to 8. Fig.

First, as shown in Fig. 1, a support metal foil (or a metal layer (C) in some cases) 12, a release layer 14, a metal layer A11, a release layer 13 and a metal layer B10 , And the support metal foil-attached composite metal layer 9 laminated from the bottom in this order is prepared.

The metal layer B is for protecting the surface of the metal layer A11 (the interface with the metal layer B10) and is physically peelable at the interface with the metal layer A11. A release layer 13 for stabilizing the peel strength at the interface is provided at the interface between the metal layer B10 and the metal layer A11. As for the peeling layer, it is preferable that the peeling strength is stabilized even when the heating and pressing are repeated a plurality of times when the insulating layer and the conductor layer are laminated. As the release layer 13, it is possible to use a metal oxide of Ni and W, a metal oxide of Ni and Mo, a material of a Cu-Ni-Mo alloy, or the like as disclosed in Patent Documents 3 and 4 . When the metal layer B10 is physically peeled off at the interface with the metal layer A11, the release layer 13 is peeled off in the state of being attached to the metal layer B10 side, and the peeling layer 13 remains on the surface of the metal layer A11 .

The metal layer A11 serves as a power supply layer for supplying electric current in order to perform pattern plating 18 on the surface of the metal layer 10 after the metal layer 10 has been peeled off and the interface between the metal layer A10 and the support metal foil ) 12). ≪ / RTI > 8 (16)), the conductor pattern 2 is removed by etching. Therefore, in order to reduce the variation in the etching amount as much as possible and to form a high-precision fine circuit, (Ultra-thin) metal foil is preferable, and 3 mu m to 5 mu m is particularly preferable. In order to stabilize the peeling strength at the interface, the above-described peeling layers 13 and 14 are provided on the interface between the metal layer B10 and the support metal foil (or the metal layer C) do.

The support metal foil (or the metal layer (C)) 12 is disposed on the side where the support metal foil (or the metal layer (C)) 12 is laminated with the base material 16 when the support metal foil- And becomes physically peelable at the interface with the metal layer A11. When laminated with the base material 16, a material and a thickness are not particularly limited as long as the base material 16 has adhesion with the base material 16, but a copper foil or an aluminum foil is preferable as a material in view of versatility and handling properties. And particularly preferably from 35 mu m to 70 mu m. The interface with the metal layer A11 is provided with the release layer 14 as described above in order to stabilize the peel strength at the interface.

The support metal foil-attached composite metal layer 9 has three or more metal layers (for example, the metal layer B10 and the metal layer A11 and the support metal foil (or the metal layer C) 12) The interface between the metal layer A 10 and the metal layer A 11 and the interface between the metal layer A 11 and the support metal foil (or metal layer C) 12 are physically separated from each other at two interfaces (for example, In the step of forming the supporting substrate 17 by laminating the base material 16 on the support metal foil (or the metal layer (C)) 12 side of the support metal foil-attached composite metal layer 9, the metal layer B10 Foreign matter such as resin powder adheres to the surface of the metal layer A11. Even if such foreign matter adheres to the surface of the metal layer A11, the metal layer B10 is physically peeled from the interface with the metal layer A11, Since the surface of the metal layer A11 without the metal layer A11 is formed, It is possible to ensure the surface. Therefore, even in the case of performing the plating metal layer pattern (18) using as a power supply layer (A11), it is possible to suppress the occurrence of defects, it is possible to improve the yield.

2 to 8, a peeling layer 13 is formed between the metal layer B10 and the metal layer A11 and a peeling layer 13 is formed between the metal layer A11 and the metal layer C12, (14) is provided, but the illustration is omitted. Next, as shown in Fig. 2 (1), the support metal foil (or the metal layer (C)) 12 side of the composite metal layer 9 with the support metal foil 9 is laminated with the substrate 16 to form the support substrate 17 do. The substrate 16 is integrally laminated with the supporting metal foil-attached composite metal layer 9 to form the supporting substrate 17. The substrate 16 can be generally used as the insulating layer 3 of the wiring board . The metal foil 15 may be laminated and integrated in addition to the composite metal layer 9 having the support metal foil and the base material 16. Examples of such a substrate 16 include glass epoxy, glass polyimide and the like. The supporting substrate 17 can be formed by using the composite metal layer 9 with a support metal foil to secure rigidity in the production of a wiring board to improve workability and to prevent damage during handling, As the main role. For this reason, it is preferable that the base material 16 has a reinforcing material such as glass fiber. For example, a prepreg such as glass epoxy or glass polyimide is superimposed on the composite metal layer 9 with a support metal foil, And heating and pressurizing them to form a laminated body.

Next, as shown in Fig. 2 (2), the metal layer B10 is physically peeled from the interface between the metal layer B10 and the metal layer A11 of the support metal foil-bonded composite metal layer 9. On the surface of the metal layer B10, foreign matters such as resin powder from the prepreg or the like, which is the material of the base material 16, may adhere to the surface of the metal layer B10. Therefore, when the conductor pattern 2 is formed by using the metal layer B10, defects such as disconnection or short-circuit in the conductor pattern 2 are prevented by foreign matter such as resin powder adhering to the surface There is a possibility that the yield may be lowered. However, by peeling and removing the metal layer B10 as described above, the conductor pattern can be formed by using the metal layer A11 to which no foreign matter such as resin powder is adhered, so that the occurrence of circuit defects can be suppressed And it is possible to improve the yield. Furthermore, since the metal layer B10 can be physically peeled off, the peeling strength can be easily adjusted by adjusting the peel strength at the interface between the metal layer B10 and the metal layer A11.

Here, the composite metal layer 9 with a support metal foil has a peel strength at the interface between the metal layer A11 and the support metal foil (or the metal layer C) 12 is larger than the peel strength at the interface between the metal layer B10 and the metal layer A11 Is preferably formed larger than the peel strength. This prevents the interface between the metal layer A11 and the support metal foil (or the metal layer C) 12 from peeling at the same time when physically peeling off at the interface between the metal layer B10 and the metal layer A11 . The peel strength is preferably from 2 N / m to 50 N / m at the interface between the metal layer B10 and the metal layer A11 and between the metal layer A11 and the support metal foil (or the metal layer C) The peel strength of the interface between the metal layer A10 and the metal layer A11 is set to 10 N / m to 70 N / m at the interface and the peel strength at the interface between the metal layer A11 and the support metal foil (or metal layer C) The metal layer A11 is peeled at the same time when the metal layer B10 is peeled off. On the other hand, if the metal layer A11 is peeled off at the same time, So that the workability is good.

The adjustment of the peel strength can be made by adjusting the composition and conditions of the plating solution for forming the metal oxide or the alloy plating layer as the peeling layer, for example, as shown in Patent Documents 3 and 4.

Next, as shown in Fig. 2 (3), pattern plating 18 is performed on the metal layer A11 remaining on the support substrate 17. Then, as shown in Fig. As described above, no foreign matters such as resin powder are adhered to the surface of the metal layer A11 (the interface with the metal layer B10) from the prepreg or the like used at the time of lamination. It becomes possible to suppress. The pattern plating 18 can be performed using electroplating after a plating resist (not shown) is formed on the metal layer A11. As the plating resist, a photosensitive resist used in a manufacturing process of a wiring board can be used. As the electroplating, copper sulfate plating or the like used in a manufacturing process of a wiring board can be used.

Next, as shown in Fig. 3 (4), the insulating layer 3 is laminated on the metal layer A11 including the patterned plating 18 to form the supporting board-attached wiring board 22. Next, as shown in Fig. At this time, the metal foil to be the conductor layer 20 may be laminated at the same time. As the insulating layer 3, those which are generally used as the insulating layer 3 of the wiring board can be used. Examples of the insulating layer 3 include an epoxy resin and a polyimide resin. Examples of the insulating layer 3 include an epoxy-based or polyimide-based adhesive sheet, a prepreg such as a glass epoxy or glass polyimide, And then heating and pressing them together to form a laminated body. The metal foil to be used as the conductor layer 20 is preferably a copper foil used in the production of a wiring board.

Next, as shown in Figs. 3 (5) and 6 (6), the interlayer connection holes 21 may be formed to form the interlayer connection 5 and the wiring layer 6. The interlayer connection 5 can be formed, for example, by forming an interlayer connection hole 21 using a so-called conformal method, and then plating the inside of the interlayer connection hole 21. Electroless copper plating, electric copper plating, field via plating, and the like can be used as the back plating after performing thinned electroless copper plating as the base plating. In order to make the thickness of the conductor layer 20 to be etched thin to make it easy to form a fine circuit, it is preferable to form the plating resist after the base plating of the thin portion and perform the back plating by electroplating or field via plating. The wiring layer 6 can be formed, for example, by plating the interlayer connection hole 21 and then removing the unnecessary conductor layer 20 by etching.

Next, as shown in FIGS. 4 (7), (8) and 5 (9) and (10), the insulating layer 3, the conductor layer 20 The wiring layer 6 and the interlayer connection 5 may be formed so as to have the desired number of layers in the same manner as in FIGS. 3 (5) and (6). By forming the supporting board-attached wiring board 22 in this manner, the supporting board 17 secures rigidity, so that workability can be improved, damage during handling can be prevented, and yield can be improved.

Subsequently, as shown in Figs. 6 (11) and 12 (12), after the wiring layer 6 is formed, the solder resist 4 and the protective plating 8 are formed at desired locations as required. As the protective plating 8, nickel plating and gold plating, which are used as the protective plating 8 for the connection terminals of the wiring board, are preferable.

Next, as shown in Fig. 7 (13), if necessary, the preliminary solder 19 may be formed at a desired position of the wiring layer of the upper layer again. The preliminary solder 19 can be formed by a method of printing solder paste and reflowing. In this manner, by forming the preliminary solder in the state of the supporting board-attached wiring board 22, even when the wiring board alone is liable to be bent or deformed by heating at the time of solder reflow, And the yield at the time of mounting improves. Further, by providing the preliminary solder 19 on the side of the wiring board, the solder applying step in the step of mounting the semiconductor element 7 can be omitted, and the number of steps can be reduced.

Next, as shown in Fig. 7 (14), the mounting of the semiconductor element 7 (25 is bump) and sealing with the sealing resin 23 are performed to form the semiconductor package 24 with the supporting substrate. As described above, by mounting or sealing the semiconductor element 7 as it is with the support substrate 17 provided thereon, the wiring board is thin and does not have rigidity, and warping and deformation are prevented The supporting substrate 17 secures the rigidity and suppresses warpage and deformation, thereby improving the packaging yield.

Next, as shown in Fig. 8 (15), the metal layer A11 of the support metal foil-attached composite metal layer 9 and the support metal foil (or the metal layer C) The semiconductor package 26 is physically peeled and separated from the support substrate 17 together with the metal layer A11. That is, the metal layer A11 of the support substrate 17 is left on the side of the semiconductor package 26 from the semiconductor package 24 with the support substrate, and the release layer 14 between the metal layer A11 and the metal layer C12, The support substrate 17 is peeled off.

Next, as shown in Fig. 8 (16), the metal layer A11 remaining on the bottom of the separated semiconductor package 26 is removed by etching or the like, and the pattern plating 18 is removed from the surface of the insulating layer 3 So as to form the conductor pattern 2. As a result, when the conductor pattern 2 is formed, the side surface of the conductor pattern 2 is not eroded by etching. Therefore, undercut is not generated, and thus the fine conductor pattern 2 can be formed. Since the conductor pattern 2 formed in the present invention is in a state of being embedded in the insulating layer 3, not only the bottom surface of the conductor pattern 2 but also both side surfaces are in close contact with the insulating layer 3 , And even in a fine circuit, sufficient adhesion can be ensured. In the case of using an ultra-thin copper foil having a thickness of 1 탆 to 5 탆 as the metal layer A11, since the metal layer A11 can be removed even in a small etching amount, it is buried in the insulating layer 3, The surface of the conductor pattern 2 exposed from the contact plug 2 is flat, connection reliability can be ensured, and it is also suitable for use as a connection terminal.

By using the composite metal layer with the support metal foil of the present invention, it is possible to manufacture a plurality of wiring boards by using a composite metal layer with a support metal foil and to improve the yield in the conductor pattern forming step and the mounting step It is possible to provide a composite metal layer with a support metal foil, a wiring board using the composite metal layer, a method of manufacturing the same, and a method of manufacturing a semiconductor package using the wiring board, by reducing waste produced in the production of a wiring board or a semiconductor package have.

1 is a cross-sectional view of a composite metal layer with a support metal foil of the present invention.
2 is a flow chart showing a part of a method for manufacturing a wiring board of the present invention.
3 is a flow chart showing a part of a method for manufacturing a wiring board of the present invention.
4 is a flow chart showing a part of a method for manufacturing a wiring board of the present invention.
5 is a flow chart showing a part of a method for manufacturing a wiring board of the present invention.
6 is a flow chart showing a part of a method for manufacturing a wiring board of the present invention.
7 is a flow chart showing a part of a method of manufacturing a wiring board and a semiconductor package of the present invention.
8 is a flow chart showing a part of a method of manufacturing the semiconductor package of the present invention.

Example

Hereinafter, the present invention will be described concretely with reference to Examples, but the present invention is not limited to these Examples.

1. Preparation of Composite Metal Layer with Support Metal foil

As the support metal foil, an electrolytic copper foil having a thickness of 18 mu m is used, acid cleaning is performed with 30 g / L sulfuric acid as a pretreatment, and then a release layer is formed on the surface of the glossy surface (Ni 30 g / L, Mo3.0 g / 30 g / L). The metal oxide layer is formed in the bath. The adjustment of the amount of metal oxide is carried out at the current.

Next, electrolytic plating was carried out in a bath of a metal layer (200 g / L of copper sulfate and 100 g / L of sulfuric acid), and plating was carried out to 5 탆.

After the metal oxide layer and the metal layer were formed a predetermined number of times, the uppermost layer was subjected to chromate treatment only. The peel strength of each metal layer of the obtained composite metal layer with a support metal foil was measured. Further, the composite metal layer with the support metal foil was heated at 300 DEG C for 5 hours, and the peel strength was measured for each layer, and the rate of change was determined. The adjustment of the peel strength was carried out with the thickness of the metal oxide layer. The measurement results of the peel strength are shown in Table 1.

The support metal foil-bonded composite metal layers (A) and (B) shown in Table 1 were specifically manufactured in the same manner as the following (Example 1) and (Example 2).

(Example 1)

Preparation of composite metal layer (A) with support metal foil

(1) As a support metal foil, an electrolytic copper foil having a thickness of 18 占 퐉 was used and dipped in 30 g / L of sulfuric acid for 60 seconds, washed with acid, and then washed with running water for 30 seconds.

(2) 30 g / L of nickel sulfate hexahydrate, 3.Og / L of sodium molybdate dihydrate, 30 g / L of sodium triacetate dihydrate as a positive electrode, and a titanium electrode plate having an iridium oxide- , pH 6.0, and a solution temperature of 30 캜 for 5 seconds at a current density of 20 A / dm ² on the glossy surface of an electrolytic copper foil to form a release layer 1 containing a metal oxide of nickel and molybdenum.

3 to the surface after the release layer first formed, copper sulfate pentahydrate 200g / L, sulfuric acid 100g / L, in a bath of liquid temperature 40 ℃, and a Ti plate subjected to the iridium coating oxidation of the anode, the current density of 4A / dm ² To carry out electrolytic plating for 340 seconds to form a metal layer 1 having a thickness of 5 占 퐉.

(4) The surface of the metal layer 1 after the formation thereof was electrolytically treated at a current density of 10 A / dm ² for 10 seconds using the same bath as in (2) to form a release layer 2 containing a metal oxide of nickel and molybdenum.

(5) Electroplating was carried out for 340 seconds at a current density of 4 A / dm ² using the same bath as in (3) on the surface after the release layer 2 was formed to form a metal layer 2 having a thickness of 5 탆.

(6) The surface of the metal layer 2 after the formation was subjected to electrolytic treatment at a current density of 5 A / dm ² for 20 seconds using the same bath as in (2) to form a release layer 3 containing a metal oxide of nickel and molybdenum.

(7) A metal layer 3 having a thickness of 5 탆 was formed on the surface after the release layer 3 was formed by electrolytic plating for 340 seconds at a current density of 4 A / dm ² using the same bath as in (3).

(8) The surface of the metal layer 3 after the formation was electrolytically treated at a current density of 2 A / dm ² for 50 seconds using the same bath as in (2) to form a release layer 4 containing a metal oxide of nickel and molybdenum.

9, using the same bath and (3) a release layer 4 on the surface after the formation, by performing the electrolytic plating 340 seconds at a current density of 4A / dm ² to form a metal layer 4 having a thickness of 5㎛.

(10) Using a plating bath (limiting current density 15 A / dm ² ) prepared by adding 150 g / L of copper sulfate pentahydrate, 100 g / L of sulfuric acid and a solution temperature of 30 캜 to the surface after formation of the metal layer 4, ² for 3 seconds and electrolytically treated at 2 current density of 5 A / dm ² for 80 seconds to form a roughened layer composed of copper particles on the cove.

(11) Subsequently, the surface after formation of the roughened layer was subjected to electrolytic treatment at a current density of 0.5 A / dm ² for 2.5 seconds using an aqueous solution adjusted to 3.5 g / L sodium bichromate dihydrate, pH 4.0, , And a chromate layer was formed on the coarsened layer.

(12) The surface on which the chromate layer was formed was immersed in an aqueous solution of 0.1% by weight of 3-glycidoxypropyltrimethoxysilane and immediately dried at 80 ° C to form a silane coupling agent-treated layer on the chromate layer.

(Example 2)

Preparation of composite metal layer (B) with support metal foil

(1) As a support metal foil, an electrolytic copper foil having a thickness of 18 占 퐉 was used, and the substrate was immersed in sulfuric acid at 30 g / L for 60 seconds, washed with acid, and then washed with running water for 30 seconds.

(2) 30 g / L of nickel sulfate hexahydrate, 3.Og / L of sodium molybdate dihydrate, 30 g / L of sodium trihydrate dihydrate as a positive electrode, and a titanium electrode plate coated with iridium oxide with the washed electrolytic copper foil as a negative electrode. , pH 6.0, and a solution temperature of 30 캜 for 4 seconds at a current density of 25 A / dm ² on a glossy surface of an electrolytic copper foil to form a release layer 1 containing a metal oxide of nickel and molybdenum.

3 to the surface after the release layer first formed, copper sulfate pentahydrate 200g / L, sulfuric acid 100g / L, in a bath of liquid temperature 40 ℃, and a Ti plate subjected to the iridium coating oxidation of the anode, the current density of 4A / dm ² To carry out electrolytic plating for 340 seconds to form a metal layer 1 having a thickness of 5 占 퐉.

(4) The surface of the metal layer 1 after the formation thereof was electrolytically treated at a current density of 20 A / dm ² for 5 seconds using the same bath as in (2) to form a release layer 2 containing a metal oxide of nickel and molybdenum.

(5) Electroplating was carried out for 340 seconds at a current density of 4 A / dm ² using the same bath as in (3) on the surface after the release layer 2 was formed to form a metal layer 2 having a thickness of 5 탆.

(6) The surface of the metal layer 2 after the formation thereof was electrolytically treated at a current density of 10 A / dm ² for 10 seconds by using the same bath as in (2) to form a release layer 3 containing a metal oxide of nickel and molybdenum.

(7) A metal layer 3 having a thickness of 5 탆 was formed on the surface after the release layer 3 was formed by electrolytic plating for 340 seconds at a current density of 4 A / dm ² using the same bath as in (3).

(8) The surface of the metal layer 3 after the formation was electrolytically treated at a current density of 2.5 A / dm ² for 40 seconds using the same bath as in (2) to form a release layer 4 containing a metal oxide of nickel and molybdenum .

9, using the same bath and (3) a release layer 4 on the surface after the formation, by performing the electrolytic plating 340 seconds at a current density of 4A / dm ² to form a metal layer 4 having a thickness of 5㎛.

(10) The surface of the metal layer 4 was subjected to the same treatment as (10) to (12) in Example 1 to sequentially form a roughened layer, a chromate layer and a silane coupling agent-treated layer.

2. Evaluation of peelability

The surface of the uppermost layer was washed with sulfuric acid to remove moisture from the surface, and a polyimide precursor (product name: U-Vernis-A manufactured by Ube Kosan Co., Ltd.) was applied in a thickness of 50 탆, pre-dried and then cured at 300 캜 for 2 hours, I made it to Mid. Subsequently, the polyimide with the metal layer was peeled off from the underlying metal layer. Furthermore, the same polyimide was formed on the exposed metal layer, and the sequential peeling was repeated. The peelability was visually evaluated and the results are shown in Table 1.

Item
Composite metal layer with support metal foil (A)
Composite metal layer with support metal foil B
Early stage
Peel strength Peel strength
Rate of change Peelability Early stage
Peel strength Peel strength
Rate of change Peelability Support metal foil and
The metal layer 1 thereon 46.9 9 ○ 68.4 5 ○ The metal layer 1 and
The metal layer 2 29.1 13 ○ 46.9 8 ○ The metal layer 2 and
The metal layer 3 thereon 15.3 21 ○ 28.1 11 ○ The metal layer 3 and
The metal layer 4 thereon 2.2 5 ○ 3.6 6 ○

Initial peel strength: N / m, rate of change of peel strength%

3. Fabrication of wiring board

(Example 3)

First, as shown in Fig. 1, a support metal foil (or a metal layer (C) in some cases) 12, a release layer 14, a metal layer A11, a release layer 13 and a metal layer B10 , And a composite metal layer 9 with a support metal foil laminated from the bottom in this order was prepared. In this example, the composite metal layer 9 with a support metal foil was produced under the same conditions as those of the support metal foil-attached composite metal layer 9 of Table 1. The number of metal layers was determined by the number of metal foils (metal layer (C) (A11) and a metal layer (B10). The peel strength of each metal layer was adjusted with reference to the production conditions of the support metal foil-attached composite metal layer (9) in Table 1. The peel strength of the metal layer is preferably 2 N / m to 50 N / m at the interface between the metal layer B10 and the metal layer A11 at the initial stage before the heating and the metal layer A11 and the support metal foil (or the metal layer C) The peeling strength of the interface between the metal layer A10 and the metal layer A11 is set to be 10 N / m to 70 N / m at the interface between the metal layer A11 and the metal foil A (or the metal layer C) So that the peel strength of the interface is reduced by 5 N / m to 20 N / m.

2 to 8, a peeling layer 13 is formed between the metal layer B10 and the metal layer A11 and a peeling layer 13 is formed between the metal layer A11 and the metal layer C12, (14) is provided, but the illustration is omitted. Next, as shown in Fig. 2 (1), a prepreg of a glass epoxy composed of the support metal foil (or the metal layer (C)) 12 side of the support metal foil-attached composite metal layer 9 and the base material 16 And metal foil 15 were laminated by using a hot press to form a support substrate 17. [

Next, as shown in Fig. 2 (2), the metal layer B10 was physically peeled from the interface between the metal layer B10 and the metal layer A11 of the support metal foil-bonded composite metal layer 9. Foreign matter such as resin powder from a prepreg or the like made of the material of the base material 16 adhered to the surface of the metal layer B10 on the surface of the metal layer B10 by peeling off the metal layer B10, It was possible to prepare a metal layer A11 to which no foreign matter adhered.

Next, as shown in Fig. 2 (3), a photosensitive plating resist is formed on the metal layer A11 remaining on the supporting substrate 17, and pattern plating 18 is performed using copper sulfate copper electroplating.

Next, as shown in Fig. 3 (4), an epoxy adhesive sheet and a copper foil are laminated by a hot press on the metal layer A11 including the patterned plating 18 to form an insulating layer 3 and a conductor layer 20 To form a supporting board-attached wiring board 22.

Next, as shown in Figs. 3 (5) and (6), the interlayer connection hole 21 is formed by using the conformal method, the thin layer electroless copper plating is performed in the interlayer connection hole 21, A plating resist was formed to conduct pattern electroplating, and after removal of the plating resist, the excess conductive layer 20 was removed by etching to form the interlayer connection 5 and the wiring layer 6.

Next, as shown in FIGS. 4 (7), (8) and 5 (9) and (10), the insulating layer 3, the conductor layer 20 ) And the pattern plating 18 were further formed and the wiring layer 6 and the interlayer connection 5 were formed so as to have the desired number of layers in the same manner as in Figs. 3 (5) and (6).

Next, as shown in Figs. 6 (11) and 12 (12), after the wiring layer 6 was formed, the solder resist 4 and the protective plating 8 were formed. As the protective plating 8, nickel plating and gold plating used as the protective plating 8 for the connection terminals of the wiring board were used.

Next, as shown in Fig. 7 (13), a preliminary solder 19 was formed at a predetermined position of the wiring layer 6 in the upper layer. The preliminary solder 19 was formed by printing solder paste and reflowing.

4. Manufacturing of semiconductor package

(Example 4)

Next, as shown in Fig. 7 (14), mounting of the semiconductor element 7 and sealing with the sealing resin 23 were performed to form the semiconductor package 24 with the supporting substrate.

Next, as shown in Fig. 8 (15), the metal layer A11 of the support metal foil-attached composite metal layer 9 and the support metal foil (or the metal layer C) The semiconductor package 26 was physically peeled off from the supporting substrate 17 together with the metal layer A11 and separated. That is, the metal layer A11 of the support substrate 17 is left on the side of the semiconductor package 26 from the semiconductor package 24 with the support substrate, and the release layer 14 between the metal layer A11 and the metal layer C12, The support substrate 17 was peeled off.

Next, as shown in Fig. 8 (16), the metal layer A11 remaining on the bottom of the separated semiconductor package 26 is removed by etching or the like, and the pattern plating 18 is removed from the surface of the insulating layer 3 To thereby form a conductor pattern 2.

2: Conductor pattern
3: Insulating layer
4: Solder resist
5: Interlayer connection
6: wiring layer
7: Semiconductor device
8: Protection plating
9: Composite metal layer with support metal foil
10: metal layer (B)
11: metal layer (A)
12: Support metal foil or metal layer (C)
13: Release layer
14: Release layer
15: Metal foil
16: substrate
17: Support substrate
18: Pattern plating
19: pre-solder
20: conductor layer
21: interlayer connection hole
22: Supporting board-attached wiring board
23: sealing resin
24: Semiconductor package with supporting substrate
25: Bump
26: semiconductor package

Claims (11)

A composite metal layer with a support metal foil in which a plurality of metal layers composed of a metal layer of a support metal and a metal layer of two or more layers are laminated via a release layer between adjacent metal layers, The peel strength between the metal layer A and the adjacent metal layer B via the peeling layer on the upper surface is higher than the peel strength between the metal layer A and the adjacent metal layer C Is less than the peel strength between the support metal foil and the support metal foil. The method according to claim 1, wherein the peel strength between the metal layer (A) positioned between the lowermost metal layer and the uppermost metal layer and the metal layer (B) adjacent to the uppermost metal layer ) And a peeling strength between the metal layer (C) and the adjacent metal layer (C) via the peeling layer on the lower surface thereof is 5 N / m to 20 N / m. The composite metal layer with a support metal foil according to any one of claims 1 to 4, wherein the rate of change of the peel strength between two adjacent metal layers via the release layer is 25% or less after heating at 300 DEG C for 5 hours. A method for manufacturing a semiconductor device, comprising the steps of: (a) performing pattern plating on a metal layer of the uppermost layer of the metal layer with a support metal foil according to any one of claims 1 to 3; (b) applying a polyimide precursor on the metal layer including the patterned plating; (C) peeling the polyimide with the metal layer from the metal layer in the lower layer of the uppermost layer, (d) removing the remaining metal layer from the polyimide with the metal layer, and exposing the patterned plating from the polyimide, (A) to (e) are sequentially repeated with respect to the uppermost layer surface of the composite metal layer with the support metal foil remaining after the conductor pattern is formed (e) and the polyimide with the metal layer is peeled off to form a plurality of wiring boards And a step of forming said wiring board. A composite metal layer with a support metal foil according to any one of claims 1 to 3, wherein a metal layer (C) as a support metal foil, an adjacent metal layer (A) via a release layer to the metal layer (C) A step of forming a support substrate by laminating the support metal thin-film side of the support metal foil-bonded composite metal layer having the adjacent metal layer (B) with the release layer between the metal layer (B) and the metal layer (A) , A step of peeling the metal layer (B) from the surface of the metal layer (A), a step of pattern plating the remaining metal layer (A) on the support substrate, and a step of forming an insulating layer And a step of forming a wiring layer and forming a wiring board having a supporting substrate. The method for manufacturing a wiring board according to claim 5, further comprising a step of forming a preliminary solder on the uppermost wiring layer after the step of forming the supporting board-attached wiring board. A supporting board-attached wiring board produced by the method for manufacturing a wiring board according to claim 5. A method for manufacturing a semiconductor device, comprising the steps of: mounting a semiconductor element on a supporting board-attached wiring board produced by the method for manufacturing a wiring board according to claim 5 and sealing the semiconductor package; A) on the side of the semiconductor package to peel off the support substrate together with the release layer between the metal layer (A) and the metal layer (C), and removing the remaining metal layer (A) And a step of forming a conductor pattern by exposing the surface of the insulating layer to a surface of the insulating layer. A support substrate formed by laminating a substrate made of a support metal thin-film side of the composite metal layer with a support metal foil according to claim 1 or 2 and an insulating layer. The supporting substrate according to claim 9, wherein the substrate made of an insulating layer is glass epoxy or glass polyimide. The supporting substrate according to claim 9, wherein the rate of change of the peel strength between two adjacent metal layers via the peeling layer of the support metal foil-attached composite metal layer before and after heating at 300 캜 for 5 hours is 25% or less.

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