KR101412687B1 - 이온주입방법, 반송용기 및 이온주입장치 - Google Patents

이온주입방법, 반송용기 및 이온주입장치 Download PDF

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Publication number
KR101412687B1
KR101412687B1 KR1020120153244A KR20120153244A KR101412687B1 KR 101412687 B1 KR101412687 B1 KR 101412687B1 KR 1020120153244 A KR1020120153244 A KR 1020120153244A KR 20120153244 A KR20120153244 A KR 20120153244A KR 101412687 B1 KR101412687 B1 KR 101412687B1
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South Korea
Prior art keywords
substrate
mask
ion implantation
tray
solar cell
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Expired - Fee Related
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KR1020120153244A
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English (en)
Korean (ko)
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KR20130092373A (ko
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토모히로 소가
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스미도모쥬기가이고교 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020120153244A 2012-02-09 2012-12-26 이온주입방법, 반송용기 및 이온주입장치 Expired - Fee Related KR101412687B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012026715A JP5892802B2 (ja) 2012-02-09 2012-02-09 イオン注入方法、搬送容器及びイオン注入装置
JPJP-P-2012-026715 2012-02-09

Publications (2)

Publication Number Publication Date
KR20130092373A KR20130092373A (ko) 2013-08-20
KR101412687B1 true KR101412687B1 (ko) 2014-06-27

Family

ID=48926952

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120153244A Expired - Fee Related KR101412687B1 (ko) 2012-02-09 2012-12-26 이온주입방법, 반송용기 및 이온주입장치

Country Status (5)

Country Link
US (1) US9117960B2 (enExample)
JP (1) JP5892802B2 (enExample)
KR (1) KR101412687B1 (enExample)
CN (1) CN103247522A (enExample)
TW (1) TWI514446B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6338416B2 (ja) * 2014-03-27 2018-06-06 住重アテックス株式会社 イオン照射方法およびイオン照射に用いる固定装置
JP6403485B2 (ja) * 2014-08-08 2018-10-10 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
DE112015004190B4 (de) * 2014-11-26 2024-05-29 VON ARDENNE Asset GmbH & Co. KG Substrathaltevorrichtung, Substrattransportvorrichtung, Prozessieranordnung und Verfahren zum Prozessieren eines Substrats
JP6410689B2 (ja) * 2015-08-06 2018-10-24 住友重機械イオンテクノロジー株式会社 イオン注入装置及びそれを用いた複数枚のウェハの処理方法
LU101808B1 (en) * 2020-05-15 2021-11-15 Mi2 Factory Gmbh An ion implantation device comprising energy filter and additional heating element

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100136478A (ko) * 2008-03-05 2010-12-28 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 솔라 셀들에서의 연쇄 주입들의 이용
WO2011155199A1 (ja) * 2010-06-10 2011-12-15 株式会社アルバック 太陽電池製造装置及び太陽電池製造方法

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US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
JP3353064B2 (ja) * 2000-02-17 2002-12-03 独立行政法人物質・材料研究機構 イオン注入装置および方法
JP4252237B2 (ja) * 2000-12-06 2009-04-08 株式会社アルバック イオン注入装置およびイオン注入方法
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7820460B2 (en) * 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
JP4530032B2 (ja) * 2007-11-29 2010-08-25 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
US7816239B2 (en) * 2008-11-20 2010-10-19 Varian Semiconductor Equipment Associates, Inc. Technique for manufacturing a solar cell
US8330128B2 (en) * 2009-04-17 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Implant mask with moveable hinged mask segments
US9000446B2 (en) * 2009-05-22 2015-04-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US20110027463A1 (en) * 2009-06-16 2011-02-03 Varian Semiconductor Equipment Associates, Inc. Workpiece handling system
SG10201500916VA (en) * 2010-02-09 2015-04-29 Intevac Inc An adjustable shadow mask assembly for use in solar cell fabrications
US8216923B2 (en) * 2010-10-01 2012-07-10 Varian Semiconductor Equipment Associates, Inc. Integrated shadow mask/carrier for patterned ion implantation
JP5704402B2 (ja) * 2011-08-30 2015-04-22 日新イオン機器株式会社 基板保持部材および当該半導体保持部材への半導体基板の取り付け位置調整方法
JP2013131367A (ja) * 2011-12-21 2013-07-04 Nissin Ion Equipment Co Ltd イオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100136478A (ko) * 2008-03-05 2010-12-28 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. 솔라 셀들에서의 연쇄 주입들의 이용
WO2011155199A1 (ja) * 2010-06-10 2011-12-15 株式会社アルバック 太陽電池製造装置及び太陽電池製造方法

Also Published As

Publication number Publication date
JP2013165131A (ja) 2013-08-22
US9117960B2 (en) 2015-08-25
TW201334038A (zh) 2013-08-16
US20130210183A1 (en) 2013-08-15
KR20130092373A (ko) 2013-08-20
CN103247522A (zh) 2013-08-14
TWI514446B (zh) 2015-12-21
JP5892802B2 (ja) 2016-03-23

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