KR101390586B1 - 컴퓨터 판독가능 저장 매체, 결정 방법 및 컴퓨터 - Google Patents

컴퓨터 판독가능 저장 매체, 결정 방법 및 컴퓨터 Download PDF

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Publication number
KR101390586B1
KR101390586B1 KR1020120024427A KR20120024427A KR101390586B1 KR 101390586 B1 KR101390586 B1 KR 101390586B1 KR 1020120024427 A KR1020120024427 A KR 1020120024427A KR 20120024427 A KR20120024427 A KR 20120024427A KR 101390586 B1 KR101390586 B1 KR 101390586B1
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South Korea
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value
evaluation item
evaluation
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exposure
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English (en)
Korean (ko)
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KR20120104497A (ko
Inventor
유이찌 교다
고오이찌로오 쯔지따
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/44—Arrangements for executing specific programs
    • G06F9/445—Program loading or initiating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Software Systems (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020120024427A 2011-03-10 2012-03-09 컴퓨터 판독가능 저장 매체, 결정 방법 및 컴퓨터 Expired - Fee Related KR101390586B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011053556A JP5728259B2 (ja) 2011-03-10 2011-03-10 プログラム及び決定方法
JPJP-P-2011-053556 2011-03-10

Publications (2)

Publication Number Publication Date
KR20120104497A KR20120104497A (ko) 2012-09-21
KR101390586B1 true KR101390586B1 (ko) 2014-04-30

Family

ID=46797206

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120024427A Expired - Fee Related KR101390586B1 (ko) 2011-03-10 2012-03-09 컴퓨터 판독가능 저장 매체, 결정 방법 및 컴퓨터

Country Status (4)

Country Link
US (1) US8584055B2 (https=)
JP (1) JP5728259B2 (https=)
KR (1) KR101390586B1 (https=)
CN (1) CN102681354B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5835968B2 (ja) * 2011-07-05 2015-12-24 キヤノン株式会社 決定方法、プログラム及び露光方法
JP5784657B2 (ja) 2013-02-26 2015-09-24 株式会社東芝 フォーカス位置調整装置、レチクル、フォーカス位置調整プログラムおよび半導体装置の製造方法
US10678143B2 (en) 2016-06-09 2020-06-09 Asml Netherlands B.V. Projection system modelling method
CN116068864B (zh) * 2023-01-17 2026-02-24 智腾科技股份有限公司 可提升光刻图形清晰度的次分辨率辅助特征图形生成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050121728A (ko) * 2003-04-16 2005-12-27 가부시키가이샤 니콘 패턴 결정 방법 및 시스템, 마스크의 제조 방법, 결상 성능조정 방법, 노광 방법 및 장치, 그리고 프로그램 및 정보기록 매체
KR100889124B1 (ko) 2006-07-12 2009-03-16 캐논 가부시끼가이샤 원판 데이터 작성 방법 및 원판 데이터 작성 프로그램
JP2009164363A (ja) 2008-01-08 2009-07-23 Fujitsu Microelectronics Ltd 露光データ作成方法及び露光方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
JP3910032B2 (ja) * 2001-09-25 2007-04-25 大日本スクリーン製造株式会社 基板現像装置
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
JP4778685B2 (ja) * 2004-03-10 2011-09-21 株式会社日立ハイテクノロジーズ 半導体デバイスのパターン形状評価方法及びその装置
TW200745771A (en) * 2006-02-17 2007-12-16 Nikon Corp Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US8134681B2 (en) * 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
US20080158529A1 (en) * 2006-12-28 2008-07-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2010045309A (ja) * 2008-08-18 2010-02-25 Fujitsu Microelectronics Ltd 露光方法及び半導体装置の製造方法
US8739079B2 (en) * 2009-10-30 2014-05-27 Canon Kabushiki Kaisha Recording medium and determination method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050121728A (ko) * 2003-04-16 2005-12-27 가부시키가이샤 니콘 패턴 결정 방법 및 시스템, 마스크의 제조 방법, 결상 성능조정 방법, 노광 방법 및 장치, 그리고 프로그램 및 정보기록 매체
KR100889124B1 (ko) 2006-07-12 2009-03-16 캐논 가부시끼가이샤 원판 데이터 작성 방법 및 원판 데이터 작성 프로그램
JP2009164363A (ja) 2008-01-08 2009-07-23 Fujitsu Microelectronics Ltd 露光データ作成方法及び露光方法

Also Published As

Publication number Publication date
JP2012191018A (ja) 2012-10-04
KR20120104497A (ko) 2012-09-21
CN102681354A (zh) 2012-09-19
JP5728259B2 (ja) 2015-06-03
US8584055B2 (en) 2013-11-12
US20120233574A1 (en) 2012-09-13
CN102681354B (zh) 2014-09-10

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