KR101390530B1 - 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 - Google Patents
포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 Download PDFInfo
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- KR101390530B1 KR101390530B1 KR1020120153728A KR20120153728A KR101390530B1 KR 101390530 B1 KR101390530 B1 KR 101390530B1 KR 1020120153728 A KR1020120153728 A KR 1020120153728A KR 20120153728 A KR20120153728 A KR 20120153728A KR 101390530 B1 KR101390530 B1 KR 101390530B1
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- layer film
- upper layer
- pattern
- photomask
- film
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011285949A JP5605917B2 (ja) | 2011-12-27 | 2011-12-27 | フォトマスクの製造方法、パターン転写方法及びフラットパネルディスプレイの製造方法 |
JPJP-P-2011-285949 | 2011-12-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130101053A Division KR101927549B1 (ko) | 2011-12-27 | 2013-08-26 | 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130075704A KR20130075704A (ko) | 2013-07-05 |
KR101390530B1 true KR101390530B1 (ko) | 2014-04-30 |
Family
ID=48911139
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120153728A KR101390530B1 (ko) | 2011-12-27 | 2012-12-26 | 포토마스크의 제조 방법, 포토마스크, 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 |
KR1020130101053A KR101927549B1 (ko) | 2011-12-27 | 2013-08-26 | 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020130101053A KR101927549B1 (ko) | 2011-12-27 | 2013-08-26 | 패턴 전사 방법 및 플랫 패널 디스플레이의 제조 방법 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5605917B2 (ru) |
KR (2) | KR101390530B1 (ru) |
TW (1) | TWI468853B (ru) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6089604B2 (ja) * | 2012-11-06 | 2017-03-08 | 大日本印刷株式会社 | 位相シフトマスクの製造方法 |
JP2015049282A (ja) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP2015102608A (ja) * | 2013-11-22 | 2015-06-04 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法 |
JP2015106001A (ja) * | 2013-11-29 | 2015-06-08 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP6391495B2 (ja) * | 2015-02-23 | 2018-09-19 | Hoya株式会社 | フォトマスク、フォトマスクセット、フォトマスクの製造方法、及び表示装置の製造方法 |
JP6601245B2 (ja) * | 2015-03-04 | 2019-11-06 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスクの製造方法及びマスクパターン形成方法 |
KR102614222B1 (ko) * | 2015-03-12 | 2023-12-18 | 레이브 엘엘씨 | 간접 표면 세정장치 및 방법 |
JP6456748B2 (ja) * | 2015-03-28 | 2019-01-23 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及びフラットパネルディスプレイの製造方法 |
JP2016224289A (ja) * | 2015-06-01 | 2016-12-28 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク及び表示装置の製造方法 |
CN105717737B (zh) | 2016-04-26 | 2019-08-02 | 深圳市华星光电技术有限公司 | 一种掩膜版及彩色滤光片基板的制备方法 |
JP2017033004A (ja) * | 2016-09-21 | 2017-02-09 | Hoya株式会社 | 表示装置製造用フォトマスク、該フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP2017076146A (ja) * | 2016-12-26 | 2017-04-20 | Hoya株式会社 | フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法 |
JP2017068281A (ja) * | 2016-12-27 | 2017-04-06 | Hoya株式会社 | フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP7080070B2 (ja) * | 2017-03-24 | 2022-06-03 | Hoya株式会社 | フォトマスク、及び表示装置の製造方法 |
KR102170424B1 (ko) * | 2017-06-28 | 2020-10-27 | 알박 세이마쿠 가부시키가이샤 | 마스크 블랭크스, 위상 시프트 마스크, 하프톤 마스크, 마스크 블랭크스의 제조 방법, 및 위상 시프트 마스크의 제조 방법 |
KR102367141B1 (ko) * | 2019-02-27 | 2022-02-23 | 호야 가부시키가이샤 | 포토마스크, 포토마스크의 제조 방법, 및 표시 장치의 제조 방법 |
TW202314374A (zh) | 2020-04-28 | 2023-04-01 | 日商Sk電子股份有限公司 | 光罩的製造方法 |
JP7214815B2 (ja) * | 2020-04-28 | 2023-01-30 | 株式会社エスケーエレクトロニクス | フォトマスク及びその製造方法 |
JP2024006265A (ja) | 2022-07-01 | 2024-01-17 | 株式会社エスケーエレクトロニクス | フォトマスクの製造方法及びフォトマスク |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09325468A (ja) * | 1996-06-06 | 1997-12-16 | Sony Corp | ハーフトーン型位相シフトマスク及びその製造方法 |
JPH1124231A (ja) * | 1997-07-01 | 1999-01-29 | Sony Corp | ハーフトーン位相シフトマスク、及びその製造方法 |
KR20110103872A (ko) * | 2010-03-15 | 2011-09-21 | 호야 가부시키가이샤 | 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 |
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JP2624351B2 (ja) * | 1990-02-21 | 1997-06-25 | 松下電子工業株式会社 | ホトマスクの製造方法 |
JPH05134384A (ja) * | 1991-11-08 | 1993-05-28 | Fujitsu Ltd | レチクルの作成方法 |
JP2501383B2 (ja) * | 1991-12-12 | 1996-05-29 | ホーヤ株式会社 | 位相シフトマスクブランク及び位相シフトマスク |
JPH07134389A (ja) * | 1993-06-25 | 1995-05-23 | Hoya Corp | 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法 |
JPH08272071A (ja) * | 1995-03-30 | 1996-10-18 | Toppan Printing Co Ltd | 位相シフトマスクとその製造方法、ならびにマスクブランク |
JP3209257B2 (ja) * | 1995-04-21 | 2001-09-17 | 凸版印刷株式会社 | 位相シフトマスク及びその製造方法 |
JP3244107B2 (ja) * | 1995-06-02 | 2002-01-07 | 凸版印刷株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
JPH1031300A (ja) * | 1996-07-12 | 1998-02-03 | Toppan Printing Co Ltd | ハーフトーン型位相シフトマスク及びその製造方法 |
JP3636838B2 (ja) * | 1996-09-06 | 2005-04-06 | Hoya株式会社 | ハーフトーン型位相シフトマスク及びその製造方法 |
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TWI305865B (en) * | 2003-03-31 | 2009-02-01 | Shinetsu Chemical Co | Photomask blank, photomask, and method of manufacture |
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JP5588633B2 (ja) * | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
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2011
- 2011-12-27 JP JP2011285949A patent/JP5605917B2/ja active Active
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2012
- 2012-12-06 TW TW101145872A patent/TWI468853B/zh active
- 2012-12-26 KR KR1020120153728A patent/KR101390530B1/ko active IP Right Grant
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2013
- 2013-08-26 KR KR1020130101053A patent/KR101927549B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH09325468A (ja) * | 1996-06-06 | 1997-12-16 | Sony Corp | ハーフトーン型位相シフトマスク及びその製造方法 |
JPH1124231A (ja) * | 1997-07-01 | 1999-01-29 | Sony Corp | ハーフトーン位相シフトマスク、及びその製造方法 |
KR20110103872A (ko) * | 2010-03-15 | 2011-09-21 | 호야 가부시키가이샤 | 다계조 포토마스크, 다계조 포토마스크의 제조 방법, 및 패턴 전사 방법 |
Also Published As
Publication number | Publication date |
---|---|
TW201329615A (zh) | 2013-07-16 |
KR101927549B1 (ko) | 2018-12-10 |
KR20130075704A (ko) | 2013-07-05 |
JP5605917B2 (ja) | 2014-10-15 |
TWI468853B (zh) | 2015-01-11 |
JP2013134435A (ja) | 2013-07-08 |
KR20130102522A (ko) | 2013-09-17 |
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