KR101388821B1 - 파워 전계 효과 트랜지스터 - Google Patents

파워 전계 효과 트랜지스터 Download PDF

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Publication number
KR101388821B1
KR101388821B1 KR1020107027427A KR20107027427A KR101388821B1 KR 101388821 B1 KR101388821 B1 KR 101388821B1 KR 1020107027427 A KR1020107027427 A KR 1020107027427A KR 20107027427 A KR20107027427 A KR 20107027427A KR 101388821 B1 KR101388821 B1 KR 101388821B1
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South Korea
Prior art keywords
mosfet
accumulation
trench
region
accumulation mosfet
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KR1020107027427A
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English (en)
Korean (ko)
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KR20110009218A (ko
Inventor
지안 리
킹 오양
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비쉐이-실리코닉스
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H10D30/635—Vertical IGFETs having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Integrated Circuits (AREA)
KR1020107027427A 2008-05-12 2009-05-11 파워 전계 효과 트랜지스터 Active KR101388821B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/119,367 US8269263B2 (en) 2008-05-12 2008-05-12 High current density power field effect transistor
US12/119,367 2008-05-12
PCT/US2009/043518 WO2009140224A2 (en) 2008-05-12 2009-05-11 Power field effect transistor

Publications (2)

Publication Number Publication Date
KR20110009218A KR20110009218A (ko) 2011-01-27
KR101388821B1 true KR101388821B1 (ko) 2014-04-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107027427A Active KR101388821B1 (ko) 2008-05-12 2009-05-11 파워 전계 효과 트랜지스터

Country Status (7)

Country Link
US (1) US8269263B2 (https=)
EP (1) EP2279525A4 (https=)
JP (1) JP5529854B2 (https=)
KR (1) KR101388821B1 (https=)
CN (1) CN102057490B (https=)
TW (1) TWI407565B (https=)
WO (1) WO2009140224A2 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10026835B2 (en) 2009-10-28 2018-07-17 Vishay-Siliconix Field boosted metal-oxide-semiconductor field effect transistor
US8669613B2 (en) * 2010-09-29 2014-03-11 Alpha & Omega Semiconductor, Inc. Semiconductor device die with integrated MOSFET and low forward voltage diode-connected enhancement mode JFET and method
CN102931191B (zh) * 2012-10-31 2016-03-02 成都芯源系统有限公司 半导体器件及其制造方法
US9559198B2 (en) 2013-08-27 2017-01-31 Nxp Usa, Inc. Semiconductor device and method of manufacture therefor
US9837526B2 (en) 2014-12-08 2017-12-05 Nxp Usa, Inc. Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor
US9443845B1 (en) 2015-02-23 2016-09-13 Freescale Semiconductor, Inc. Transistor body control circuit and an integrated circuit
US9472662B2 (en) * 2015-02-23 2016-10-18 Freescale Semiconductor, Inc. Bidirectional power transistor with shallow body trench
US10348295B2 (en) 2015-11-19 2019-07-09 Nxp Usa, Inc. Packaged unidirectional power transistor and control circuit therefore
CN109216440B (zh) * 2018-09-17 2021-08-17 电子科技大学 具有双向电平传输的凹槽型漏极结构的mosfet器件
CN109244135B (zh) * 2018-09-17 2021-03-30 电子科技大学 基于沟槽工艺的超结型双向阻断mos器件及制备方法
CN112820775A (zh) * 2021-01-07 2021-05-18 重庆邮电大学 一种具有电子积累效应的soi-ldmos器件
CN113097310B (zh) * 2021-04-02 2023-03-24 重庆邮电大学 一种具有电子积累效应的鳍式EAFin-LDMOS器件

Citations (4)

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JP2002110984A (ja) 2000-06-08 2002-04-12 Siliconix Inc 高周波ｍｏｓｆｅｔ及びその製造方法
JP2003069042A (ja) 2001-08-29 2003-03-07 Denso Corp 炭化珪素半導体装置及びその製造方法
US20060267090A1 (en) * 2005-04-06 2006-11-30 Steven Sapp Trenched-gate field effect transistors and methods of forming the same

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JP2606404B2 (ja) * 1990-04-06 1997-05-07 日産自動車株式会社 半導体装置
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
US5581100A (en) * 1994-08-30 1996-12-03 International Rectifier Corporation Trench depletion MOSFET
US5844273A (en) * 1994-12-09 1998-12-01 Fuji Electric Co. Vertical semiconductor device and method of manufacturing the same
US5661322A (en) * 1995-06-02 1997-08-26 Siliconix Incorporated Bidirectional blocking accumulation-mode trench power MOSFET
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US6426541B2 (en) * 2000-07-20 2002-07-30 Apd Semiconductor, Inc. Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication
JP2002270840A (ja) * 2001-03-09 2002-09-20 Toshiba Corp パワーｍｏｓｆｅｔ
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JP4265234B2 (ja) * 2003-02-13 2009-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
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JP2002110984A (ja) 2000-06-08 2002-04-12 Siliconix Inc 高周波ｍｏｓｆｅｔ及びその製造方法
JP2003069042A (ja) 2001-08-29 2003-03-07 Denso Corp 炭化珪素半導体装置及びその製造方法
US20060267090A1 (en) * 2005-04-06 2006-11-30 Steven Sapp Trenched-gate field effect transistors and methods of forming the same

Also Published As

Publication number Publication date
US20090278176A1 (en) 2009-11-12
EP2279525A2 (en) 2011-02-02
US8269263B2 (en) 2012-09-18
JP5529854B2 (ja) 2014-06-25
JP2011522402A (ja) 2011-07-28
CN102057490A (zh) 2011-05-11
WO2009140224A2 (en) 2009-11-19
TW201007944A (en) 2010-02-16
TWI407565B (zh) 2013-09-01
WO2009140224A3 (en) 2010-02-18
EP2279525A4 (en) 2013-12-18
KR20110009218A (ko) 2011-01-27
CN102057490B (zh) 2013-10-30

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