KR101365102B1 - 이중 펌핑 모드를 구비하는 이온 주입 장치 및 그 방법 - Google Patents

이중 펌핑 모드를 구비하는 이온 주입 장치 및 그 방법 Download PDF

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Publication number
KR101365102B1
KR101365102B1 KR1020097011436A KR20097011436A KR101365102B1 KR 101365102 B1 KR101365102 B1 KR 101365102B1 KR 1020097011436 A KR1020097011436 A KR 1020097011436A KR 20097011436 A KR20097011436 A KR 20097011436A KR 101365102 B1 KR101365102 B1 KR 101365102B1
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South Korea
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ion beam
ion
species
pressure
source housing
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Korean (ko)
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KR20090116692A (ko
Inventor
죠셉 씨 올슨
조나단 제럴드 잉글랜드
크리스토퍼 알 하템
제이 토마스 슈어
Original Assignee
죠셉 씨 올슨
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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Publication of KR20090116692A publication Critical patent/KR20090116692A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/022—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020097011436A 2006-11-08 2007-11-08 이중 펌핑 모드를 구비하는 이온 주입 장치 및 그 방법 Active KR101365102B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US85795406P 2006-11-08 2006-11-08
US60/857,954 2006-11-08
US11/866,099 2007-10-02
US11/866,099 US7622722B2 (en) 2006-11-08 2007-10-02 Ion implantation device with a dual pumping mode and method thereof
PCT/US2007/084114 WO2008058246A2 (en) 2006-11-08 2007-11-08 Ion implantation device with a dual pumping mode and method thereof

Publications (2)

Publication Number Publication Date
KR20090116692A KR20090116692A (ko) 2009-11-11
KR101365102B1 true KR101365102B1 (ko) 2014-02-19

Family

ID=39271599

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097011436A Active KR101365102B1 (ko) 2006-11-08 2007-11-08 이중 펌핑 모드를 구비하는 이온 주입 장치 및 그 방법

Country Status (4)

Country Link
US (1) US7622722B2 (enExample)
JP (1) JP5196357B2 (enExample)
KR (1) KR101365102B1 (enExample)
WO (1) WO2008058246A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7655932B2 (en) * 2007-01-11 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for providing ion source feed materials
US7855361B2 (en) * 2008-05-30 2010-12-21 Varian, Inc. Detection of positive and negative ions
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
GB2484488B (en) * 2010-10-12 2013-04-17 Vg Systems Ltd Improvements in and relating to ion guns
US8993982B2 (en) 2013-07-15 2015-03-31 Vg Systems Limited Switchable ion gun with improved gas inlet arrangement
US10217654B1 (en) * 2018-02-12 2019-02-26 Varian Semiconductor Equipment Associates, Inc. Embedded features for interlocks using additive manufacturing

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050269520A1 (en) 1999-12-13 2005-12-08 Semequip Inc. Icon implantation ion source, system and method
US20060219938A1 (en) 2005-03-08 2006-10-05 Axcelis Technologies, Inc. High conductance ion source

Family Cites Families (25)

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Publication number Priority date Publication date Assignee Title
US4793908A (en) * 1986-12-29 1988-12-27 Rockwell International Corporation Multiple ion source method and apparatus for fabricating multilayer optical films
US4791273A (en) * 1987-05-15 1988-12-13 Varian Associates, Inc. Vaporizer system for ion source
JP2582078B2 (ja) * 1987-07-31 1997-02-19 東京エレクトロン 株式会社 イオン注入装置
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
GB9021629D0 (en) * 1990-10-04 1990-11-21 Superion Ltd Apparatus for and method of producing ion beams
JPH0737807A (ja) * 1993-07-21 1995-02-07 Hitachi Ltd 原子、分子線による表面処理方法およびその装置
US5624598A (en) * 1995-04-18 1997-04-29 Shepodd; Timothy J. Materials for the scavanging of hydrogen at high temperatures
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
US5672882A (en) * 1995-12-29 1997-09-30 Advanced Micro Devices, Inc. Ion implantation device with a closed-loop process chamber pressure control system
US6259091B1 (en) * 1996-01-05 2001-07-10 Battelle Memorial Institute Apparatus for reduction of selected ion intensities in confined ion beams
JP3749924B2 (ja) * 1996-12-03 2006-03-01 富士通株式会社 イオン注入方法および半導体装置の製造方法
JPH10256175A (ja) * 1997-03-10 1998-09-25 Yamaha Corp イオン注入法及び半導体装置の製法
US6107634A (en) * 1998-04-30 2000-08-22 Eaton Corporation Decaborane vaporizer
US5965482A (en) * 1998-06-09 1999-10-12 Westinghouse Savannah River Company Composition for absorbing hydrogen from gas mixtures
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US7838842B2 (en) * 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
US6323497B1 (en) * 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
JP3403383B2 (ja) * 2000-10-24 2003-05-06 純子 佐伯 イオン源制御方法およびイオン源制御装置
JP3485104B2 (ja) * 2001-04-24 2004-01-13 日新電機株式会社 イオン源用オーブン
JP2004014422A (ja) * 2002-06-11 2004-01-15 Matsushita Electric Ind Co Ltd イオン注入装置
US7410890B2 (en) * 2002-12-12 2008-08-12 Tel Epion Inc. Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
WO2005060602A2 (en) 2003-12-12 2005-07-07 Semequip, Inc. Controlling the flow of vapors sublimated from solids
WO2005079318A2 (en) * 2004-02-14 2005-09-01 Epion Corporation Methods of forming doped and un-doped strained semiconductor and semiconductor films by gas-cluster ion irradiation
US20070178678A1 (en) * 2006-01-28 2007-08-02 Varian Semiconductor Equipment Associates, Inc. Methods of implanting ions and ion sources used for same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050269520A1 (en) 1999-12-13 2005-12-08 Semequip Inc. Icon implantation ion source, system and method
US20060219938A1 (en) 2005-03-08 2006-10-05 Axcelis Technologies, Inc. High conductance ion source

Also Published As

Publication number Publication date
WO2008058246A3 (en) 2008-07-03
JP5196357B2 (ja) 2013-05-15
WO2008058246A2 (en) 2008-05-15
US7622722B2 (en) 2009-11-24
JP2010509737A (ja) 2010-03-25
US20080105833A1 (en) 2008-05-08
KR20090116692A (ko) 2009-11-11

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