KR101362632B1 - 에칭 방법 및 장치 - Google Patents

에칭 방법 및 장치 Download PDF

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Publication number
KR101362632B1
KR101362632B1 KR1020137010746A KR20137010746A KR101362632B1 KR 101362632 B1 KR101362632 B1 KR 101362632B1 KR 1020137010746 A KR1020137010746 A KR 1020137010746A KR 20137010746 A KR20137010746 A KR 20137010746A KR 101362632 B1 KR101362632 B1 KR 101362632B1
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KR
South Korea
Prior art keywords
etching
processing
gas
fluorine
pretreatment
Prior art date
Application number
KR1020137010746A
Other languages
English (en)
Korean (ko)
Other versions
KR20130052034A (ko
Inventor
？스께 구누기
사또시 마유미
Original Assignee
세키스이가가쿠 고교가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세키스이가가쿠 고교가부시키가이샤 filed Critical 세키스이가가쿠 고교가부시키가이샤
Publication of KR20130052034A publication Critical patent/KR20130052034A/ko
Application granted granted Critical
Publication of KR101362632B1 publication Critical patent/KR101362632B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
KR1020137010746A 2010-09-28 2011-09-22 에칭 방법 및 장치 KR101362632B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010217048 2010-09-28
JPJP-P-2010-217048 2010-09-28
PCT/JP2011/071638 WO2012043383A1 (ja) 2010-09-28 2011-09-22 エッチング方法及び装置

Publications (2)

Publication Number Publication Date
KR20130052034A KR20130052034A (ko) 2013-05-21
KR101362632B1 true KR101362632B1 (ko) 2014-02-12

Family

ID=45892834

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137010746A KR101362632B1 (ko) 2010-09-28 2011-09-22 에칭 방법 및 장치

Country Status (5)

Country Link
JP (1) JP5276223B2 (zh)
KR (1) KR101362632B1 (zh)
CN (1) CN103155116B (zh)
TW (1) TWI428983B (zh)
WO (1) WO2012043383A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112599458A (zh) * 2021-03-03 2021-04-02 西安奕斯伟硅片技术有限公司 硅片刻蚀装置和方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002039494A1 (fr) * 2000-11-08 2002-05-16 Daikin Industries, Ltd. Gaz de gravure seche et procede de gravure seche
JP2008177532A (ja) * 2006-12-21 2008-07-31 Elpida Memory Inc 半導体ウェハーの処理方法
JP2009065028A (ja) * 2007-09-07 2009-03-26 Sekisui Chem Co Ltd 半導体装置及びその製造方法、並びにコンタクトホール等の形成及びエッチング方法
JP2010087077A (ja) * 2008-09-30 2010-04-15 Sekisui Chem Co Ltd 表面処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008102807A1 (ja) * 2007-02-23 2008-08-28 Sekisui Chemical Co., Ltd. エッチング方法及び装置並びに被処理物
JP4540729B2 (ja) * 2008-03-13 2010-09-08 積水化学工業株式会社 シリコン含有膜のエッチング方法および装置
JP2010103462A (ja) * 2008-09-25 2010-05-06 Sekisui Chem Co Ltd シリコン含有膜のエッチング方法および装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002039494A1 (fr) * 2000-11-08 2002-05-16 Daikin Industries, Ltd. Gaz de gravure seche et procede de gravure seche
JP2008177532A (ja) * 2006-12-21 2008-07-31 Elpida Memory Inc 半導体ウェハーの処理方法
JP2009065028A (ja) * 2007-09-07 2009-03-26 Sekisui Chem Co Ltd 半導体装置及びその製造方法、並びにコンタクトホール等の形成及びエッチング方法
JP2010087077A (ja) * 2008-09-30 2010-04-15 Sekisui Chem Co Ltd 表面処理装置

Also Published As

Publication number Publication date
CN103155116B (zh) 2014-03-12
WO2012043383A1 (ja) 2012-04-05
JPWO2012043383A1 (ja) 2014-02-06
KR20130052034A (ko) 2013-05-21
CN103155116A (zh) 2013-06-12
TWI428983B (zh) 2014-03-01
TW201216361A (en) 2012-04-16
JP5276223B2 (ja) 2013-08-28

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