KR101358966B1 - 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를 위한 시스템 및 공정 - Google Patents

고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를 위한 시스템 및 공정 Download PDF

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KR101358966B1
KR101358966B1 KR1020127009425A KR20127009425A KR101358966B1 KR 101358966 B1 KR101358966 B1 KR 101358966B1 KR 1020127009425 A KR1020127009425 A KR 1020127009425A KR 20127009425 A KR20127009425 A KR 20127009425A KR 101358966 B1 KR101358966 B1 KR 101358966B1
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plasma
gas
metal
epitaxial
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KR20120054093A (ko
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캐널 한스 본
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에피스피드 에스.에이.
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/08—Epitaxial-layer growth by condensing ionised vapours
    • C—CHEMISTRY; METALLURGY
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C30B29/38—Nitrides
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02587—Structure
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
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  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
KR1020127009425A 2005-02-28 2006-02-28 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를 위한 시스템 및 공정 Expired - Fee Related KR101358966B1 (ko)

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Application Number Priority Date Filing Date Title
US65720805P 2005-02-28 2005-02-28
US60/657,208 2005-02-28
PCT/IB2006/000421 WO2006097804A2 (en) 2005-02-28 2006-02-28 System and process for high-density,low-energy plasma enhanced vapor phase epitaxy

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KR1020077021605A Division KR101366181B1 (ko) 2005-02-28 2006-02-28 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를위한 시스템 및 공정

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KR20120054093A KR20120054093A (ko) 2012-05-29
KR101358966B1 true KR101358966B1 (ko) 2014-02-21

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KR1020077021605A Expired - Fee Related KR101366181B1 (ko) 2005-02-28 2006-02-28 고밀도 저에너지의 플라즈마 인헨스드 기상 에피택시를위한 시스템 및 공정

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US (2) US8647434B2 (enExample)
EP (1) EP1872383A2 (enExample)
JP (1) JP5214251B2 (enExample)
KR (2) KR101358966B1 (enExample)
CN (1) CN101128911B (enExample)
AU (1) AU2006224282B2 (enExample)
CA (1) CA2597623C (enExample)
RU (1) RU2462786C2 (enExample)
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WO2006097804A2 (en) 2006-09-21
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AU2006224282A1 (en) 2006-09-21
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