KR101319743B1 - 포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법 - Google Patents
포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법 Download PDFInfo
- Publication number
- KR101319743B1 KR101319743B1 KR1020120061391A KR20120061391A KR101319743B1 KR 101319743 B1 KR101319743 B1 KR 101319743B1 KR 1020120061391 A KR1020120061391 A KR 1020120061391A KR 20120061391 A KR20120061391 A KR 20120061391A KR 101319743 B1 KR101319743 B1 KR 101319743B1
- Authority
- KR
- South Korea
- Prior art keywords
- gap
- photomask
- proximity
- exposure apparatus
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 210
- 238000012546 transfer Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 238000012545 processing Methods 0.000 claims abstract description 68
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims description 36
- 238000012937 correction Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 23
- 230000001629 suppression Effects 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 239000004973 liquid crystal related substance Substances 0.000 claims description 13
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000011156 evaluation Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims description 2
- 238000013461 design Methods 0.000 abstract description 2
- 238000005498 polishing Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 15
- 238000005452 bending Methods 0.000 description 10
- 238000007430 reference method Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001845 chromium compounds Chemical class 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2011-130239 | 2011-06-10 | ||
JP2011130239A JP5497693B2 (ja) | 2011-06-10 | 2011-06-10 | フォトマスク基板、フォトマスク基板の製造方法、フォトマスクの製造方法、及びパターン転写方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20120137279A KR20120137279A (ko) | 2012-12-20 |
KR101319743B1 true KR101319743B1 (ko) | 2013-10-17 |
Family
ID=47303353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120061391A KR101319743B1 (ko) | 2011-06-10 | 2012-06-08 | 포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5497693B2 (ja) |
KR (1) | KR101319743B1 (ja) |
CN (1) | CN102819182B (ja) |
TW (1) | TWI506355B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6522277B2 (ja) * | 2013-11-19 | 2019-05-29 | Hoya株式会社 | フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法 |
JP6415186B2 (ja) * | 2014-08-27 | 2018-10-31 | キヤノン株式会社 | 評価用マスク、評価方法、露光装置及び物品の製造方法 |
CA2972962A1 (en) * | 2015-01-05 | 2016-07-14 | Marsupial Holdings Llc | Multi-tone amplitude photomask |
JP6553887B2 (ja) * | 2015-02-19 | 2019-07-31 | Hoya株式会社 | フォトマスクの製造方法、描画装置、フォトマスクの検査方法、及び表示装置の製造方法 |
JP6556673B2 (ja) * | 2016-07-26 | 2019-08-07 | Hoya株式会社 | フォトマスクの製造方法、描画装置、表示装置の製造方法、フォトマスク基板の検査方法、及びフォトマスク基板の検査装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030080190A (ko) * | 2002-01-31 | 2003-10-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 대형 기판 및 그 제조 방법 |
KR20060132497A (ko) * | 2005-06-17 | 2006-12-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크용 대형 유리 기판 및 그의 제조 방법, 컴퓨터판독 가능한 기록 매체, 및 마더 글래스의 노광 방법 |
JP2010054933A (ja) | 2008-08-29 | 2010-03-11 | Toshiba Corp | 露光装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2671338B2 (ja) * | 1987-12-25 | 1997-10-29 | 株式会社ニコン | 露光方法及び基板の姿勢制御方法 |
JPH02251851A (ja) * | 1989-03-24 | 1990-10-09 | Seiko Instr Inc | フォトマスク |
JP2877190B2 (ja) * | 1996-01-09 | 1999-03-31 | 日本電気株式会社 | X線マスク及びその製造方法 |
US7026081B2 (en) * | 2001-09-28 | 2006-04-11 | Asml Masktools B.V. | Optical proximity correction method utilizing phase-edges as sub-resolution assist features |
TWI329779B (en) * | 2003-07-25 | 2010-09-01 | Shinetsu Chemical Co | Photomask blank substrate, photomask blank and photomask |
JP4657591B2 (ja) * | 2003-07-25 | 2011-03-23 | 信越化学工業株式会社 | フォトマスクブランク用基板の選定方法 |
KR100613461B1 (ko) * | 2005-06-29 | 2006-08-17 | 주식회사 하이닉스반도체 | 이중노광기술을 이용한 이중노광방법과 이를 위한포토마스크 |
JP2007199434A (ja) * | 2006-01-27 | 2007-08-09 | Dainippon Printing Co Ltd | プロキシミティ方式の露光方法とそれに用いられるマスク基板、および該マスク基板の作製方法 |
KR101585696B1 (ko) * | 2006-12-15 | 2016-01-14 | 아사히 가라스 가부시키가이샤 | Euv 리소그래피용 반사형 마스크 블랭크, 및 그 마스크 블랭크용의 기능막이 형성된 기판 |
-
2011
- 2011-06-10 JP JP2011130239A patent/JP5497693B2/ja active Active
-
2012
- 2012-05-28 TW TW101119017A patent/TWI506355B/zh active
- 2012-06-07 CN CN201210187324.1A patent/CN102819182B/zh active Active
- 2012-06-08 KR KR1020120061391A patent/KR101319743B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030080190A (ko) * | 2002-01-31 | 2003-10-11 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 대형 기판 및 그 제조 방법 |
KR20060132497A (ko) * | 2005-06-17 | 2006-12-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크용 대형 유리 기판 및 그의 제조 방법, 컴퓨터판독 가능한 기록 매체, 및 마더 글래스의 노광 방법 |
JP2010054933A (ja) | 2008-08-29 | 2010-03-11 | Toshiba Corp | 露光装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201310164A (zh) | 2013-03-01 |
CN102819182B (zh) | 2014-07-23 |
JP2012256798A (ja) | 2012-12-27 |
TWI506355B (zh) | 2015-11-01 |
KR20120137279A (ko) | 2012-12-20 |
JP5497693B2 (ja) | 2014-05-21 |
CN102819182A (zh) | 2012-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101006021B (zh) | 大型玻璃基板及其制造方法、以及母玻璃曝光方法 | |
KR101319743B1 (ko) | 포토마스크 기판, 포토마스크 기판의 제조 방법, 포토마스크의 제조 방법 및 패턴 전사 방법 | |
EP1933204B1 (en) | Recycling of large-size photomask substrate | |
TWI409579B (zh) | 光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置 | |
TWI461840B (zh) | 光罩基底用基板、光罩基底與光罩及其等之製造方法 | |
KR101701771B1 (ko) | 마스크블랭크용 기판의 제조방법, 마스크블랭크의 제조방법, 전사용 마스크의 제조방법 및 반도체 디바이스의 제조방법 | |
KR101649035B1 (ko) | 포토마스크의 제조 방법, 묘화 장치, 포토마스크의 검사 방법, 포토마스크의 검사 장치 및 표시 장치의 제조 방법 | |
WO2010110139A1 (ja) | マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法 | |
KR20030080190A (ko) | 대형 기판 및 그 제조 방법 | |
KR100809648B1 (ko) | 기판유지구, 기판처리장치, 기판검사장치 및 이들의사용방법 | |
CN105911813B (zh) | 光掩模制造方法、检查方法及装置,描绘装置、显示装置制造方法 | |
JP5521464B2 (ja) | ペリクル、フォトマスク、および半導体デバイス | |
JP6862859B2 (ja) | マスクブランク用のガラス基板、マスクブランクおよびフォトマスク | |
JP4819191B2 (ja) | マスクブランク用基板、マスクブランク、フォトマスクおよび半導体デバイスの製造方法 | |
CN102736402B (zh) | 光掩模用基板、光掩模、光掩模制造方法及图案转印方法 | |
CN106980225A (zh) | 基板保持装置、描绘装置、光掩模检查装置、光掩模制造方法 | |
TWI506354B (zh) | 光罩用基板、光罩及圖案轉印方法 | |
JP2017111371A (ja) | マスクブランク用基板の製造方法、マスクブランクの製造方法及び露光用マスクの製造方法 | |
CN115685667A (zh) | 掩模坯料基板及其制造方法 | |
JP2014002194A (ja) | 露光方法 | |
JP2019197768A (ja) | インプリントモールド用合成石英ガラス基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20160921 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20170920 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20180920 Year of fee payment: 6 |