KR101303382B1 - Method of fabricating organic light emitting display with thin film encapsulation - Google Patents

Abstract

The present invention relates to a method of manufacturing an organic light emitting display device in which the protective layer is heat treated without affecting other parts of the device to improve the characteristics and reliability of the device. More particularly, the positive electrode layer, the organic light emitting layer, and the cathode layer Forming a first protective layer with a silicon-based insulating material, one of a silicon thin film, a silicon excess silicon nitride film, a silicon excess silicon oxide film, and a silicon excess silicon nitride film on the first protection layer Forming a second passivation layer using the second passivation layer, and forming a third passivation layer of a silicon-based insulating material on the second passivation layer and using the second passivation layer as a heating element layer. And simultaneously heat treating the layer and the third protective layer.

Description

Method for manufacturing organic light emitting display device using thin film encapsulation

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of an organic light emitting display device, and in particular, a first protective layer is formed on a front surface of an organic light emitting display device manufactured on a transparent substrate with a silicon-based insulating material, and is formed on the first protective layer. Forming a second passivation layer using one of a silicon thin film, a silicon excess silicon nitride film, a silicon excess silicon oxide film, and a silicon excess silicon nitride film, and forming a third protection layer with a silicon-based insulating material on the second protection layer. After sequentially stacking, using an excimer laser to form a heating element layer in the molten state with the second protective layer, the first protective layer and the third protective layer by the high temperature thermal energy generated in the heating element layer By heat-treating the whole at the same time to transform into a high-density homogeneous film, an organic electric field that can effectively suppress the penetration of oxygen and moisture from the outside It relates to a method for manufacturing an optical display device.

Recent advances in software and hardware in the information and telecommunications field have exploded the demand for smart devices that can be used by integrating functions such as computers, phones, and TVs into a single terminal, thereby connecting smart devices and humans. The demand for faulty displays is also growing.

In order to satisfy these various demands of display devices, liquid crystal displays (LCDs), plasma display panels (PDPs), light emitting displays (OLEDs), and organic light emitting displays (OLEDs) Flat Panel Display (FPD) devices, such as these, are mainly used, but they have not only advantageous properties in light weight, low cost, large size, and high quality, but also can be applied as next generation lighting devices that will form a huge market in the future. Development and commercialization of organic light emitting display devices are in full swing.

The organic light emitting display device is not only a fast response speed as a self-luminous device, but also has a high brightness and excellent color to realize a high quality display, and also eliminates the need for a backlight and a color filter as in a liquid crystal display device. It is attracting attention as a next-generation flat panel display device that can satisfy various demands in the information and communication field due to its simple structure, light weight thinning, and roll to roll production.

The organic light emitting display device described above generally includes a transparent conductive anode layer, a hole injection layer, a hole transport layer, an organic light emitting layer, and an electron on a transparent substrate such as glass or plastic. It is prepared by sequentially stacking an Electron Transport Layer and a Cathode layer.

However, the organic materials forming the organic light emitting layer and the metals forming the cathode layer are very sensitive to the external environment, and when exposed to oxygen and moisture, the device characteristics such as light emission luminance and light uniformity of the device are notably reduced. In addition, since the life of the organic light emitting display device is shortened due to degradation of the device, the device must be protected by a sealed passivation layer to prevent this.

In general, since the low molecular weight material used as the material of the organic light emitting layer deteriorates at a temperature of about 100 ° C. or more, it is difficult to form a protective layer in a low temperature range of 100 ° C. or less to prevent deterioration of the device. Various encapsulation methods have been developed and used for forming a protective layer having excellent barrier properties to the external environment.

In the case of a small panel such as a display window of a mobile device, an organic light emitting display device unit is a lid type in which a metal cap or a glass cap is encapsulated using an organic encapsulant, or an inorganic material such as glass raw material. Encapsulation methods such as a frit glass type (Frit Glass Type) encapsulation using an encapsulant are mainly used, but the above methods are thick and weak to impact, and there are many problems in manufacturing large panels due to structural limitations.

In the case of a large panel such as a large TV or a monitor, a silicon nitride film formed at a low temperature region of 100 ° C. or less has a poor permeability characteristic of moisture and oxygen, and thus, an organic sheet is laminated on the silicon nitride film. A face seal method for attaching and sealing a separate glass substrate thereon, or a multi-layer encapsulation method in which an organic layer and an inorganic layer are alternately stacked to form a protective film in a plurality of layers. Thin film encapsulation method has been developed and commercialization is in progress.

However, although the commercialization of the thin-film encapsulation methods has been carried out for the manufacture of large organic electroluminescent display devices having long life and high reliability, they are still relatively thick, complicated in process and structure, and have low productivity and low permeability. Since there are many problems such as deterioration, a new thin film protective layer manufacturing method based on an insulating material such as a silicon nitride film that can be easily deposited on a large area glass substrate for effective encapsulation of a large area organic light emitting display device part. It is necessary to consider.

However, when the silicon nitride film is formed at a low temperature of 100 ° C. or lower to prevent deterioration of the organic light emitting display device, the film quality is not dense and many defects are included in the film to effectively block oxygen and moisture from the outside. There is no problem.

Thus, in order to improve the film quality of the silicon nitride film made by a low temperature process of 100 ° C. or less, the silicon nitride film is heat-treated at room temperature with an excimer laser, and modified to a film having almost the same characteristics as a high quality silicon nitride film formed at a high temperature of 800 ° C. or more. A thin film type protective layer manufacturing method (Korea Patent Registration 10-0483165) has been developed.

However, in this method, since only a portion of the surface layer of the silicon nitride film constituting the protective layer is heat treated with an excimer laser, and portions other than the surface layer are not heat treated, a thin region where the film quality is improved by heat treatment in the first silicon nitride film and the first silicon nitride film is not heat treated. Since the protective layer is formed in a double layer structure in which a thick region maintaining the state is continuous, the film quality is not uniform as a whole, and when the initial film is defective, there is a disadvantage in that a complete protective layer cannot be formed.

Hereinafter, a method of manufacturing a thin film type protective layer for blocking an organic light emitting display device from the outside when manufacturing the organic light emitting display device according to the related art will be described in detail with reference to the accompanying drawings.

1 is a process cross-sectional view of an organic light emitting display device using a method of manufacturing a thin film type protective layer of the prior art.

In the prior art, materials such as indium tin oxide (ITO), indium zinc compound (IXO), zinc oxide (TO), tin, gold, platinum, and the like are used on a transparent substrate 111 such as glass, quartz, or transparent plastic. After the formation of the anode layer 112, the hole injection layer 115, the hole transport layer 116, the organic light emitting layer 117, the electron transport layer 118, and the negative electrode layer 119 are sequentially formed on the anode layer 112. Laminated by.

In order to suppress deterioration of the organic light emitting layer 117 and the cathode layer 119 and the like from the penetration of external oxygen and moisture on the transparent substrate 111 including the negative electrode layer 119, Silicon oxide film (SiO ₂ ), silicon nitride oxide film (SiO _x N _y ), or silicon nitride film (Si ₃ N) having a thickness (d ₁ ) of about 100 kPa to 50,000 kPa, such as by vapor deposition, sputtering, vacuum deposition, or electron beam. _A protective layer 170 is formed by stacking a single layer film or two or more thin films selected from silicon-based insulating materials such as ₄ or SiN _x ).

In this case, when the protective layer 170 is formed using a silicon-based insulating material by chemical vapor deposition, SiN _x is a reaction gas together with an inert gas as SiH ₄ , NH ₃ , in a temperature range of 25 ° C. to 300 ° C. N ₂ , gas is used, SiON uses SiH ₄ , N ₂ O, NH ₃ , N ₂ gas as the reactant gas with inert gas, and SiO ₂ is SiH ₄ and O ₂ gas as reactant gas with inert gas. The process is carried out using each.

Wherein a sputtering method in the case of forming the protective layer 170 using an insulating material of the silicon family, the SiN _x, SiON, SiO ₂ is SiN _x, SiON, each at a temperature of 25 ℃ ~ 300 ℃, SiO ₂ target The process is carried out using.

And Ar ₂ (wavelength = 126 nm), Kr ₂ (wavelength = 146 nm), F ₂ (wavelength = 157 nm), Xe ₂ (wavelength = 172 nm), ArF (wavelength =) on the entire surface of the protective layer 170. Surface layer of silicon nitride film irradiated with a certain amount of excimer laser such as 193 nm), KrF (wavelength = 248 nm), XeCl (wavelength = 308 nm), and XeF (wavelength = 351 nm). Only the heat treatment d ₂ ) locally to form the protective layer 170.

Here, the protective layer 170 is heat-treated to have a very thin region (d ₂ ) of which the film quality is improved to a high quality thin film layer, and a thick region (d ₁ -d ₂ ) of which the film quality is not improved at all is not achieved. Since it is formed in the form of remaining in the first film state including, as a result, there is a problem that the film quality is not uniform throughout the protective layer 170, as well as reducing the life and reliability of the device.

In addition, the prior art as described above, if a defect such as cracks, pin holes, or dust particles is already included in the initial film before the heat treatment process, the heat treatment process may be performed. Due to such defects, a portion of the surface layer which cannot be improved due to such defects occurs, and there is a structural problem in that the organic light emitting display device cannot be effectively protected.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method of manufacturing an organic light emitting display device, which can improve film quality non-uniformity generated when heat-treating the protective layer of an organic light emitting display device composed of a silicon-based insulating material in the prior art with an excimer laser. To provide.

In addition, the present invention provides a method of manufacturing an organic light emitting display device capable of improving problems such as deterioration of device performance and reliability, which occur due to a region in which the film quality is not improved in the protective layer even after heat treatment.

In addition, an object of the present invention is to provide a method for manufacturing an organic light emitting display device that can improve the structural weakness that is weak to defects in the film generated because the heat-treated region is extremely thin.

The object of the present invention as described above is achieved by the following configuration.

(1) A method of manufacturing an organic light emitting display device according to the present invention includes forming a first electrode on a transparent substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode on the second electrode and planarizing an upper surface thereof; Forming a first passivation layer on the planarization layer using an insulating material based on silicon; Forming a second protective layer on the first protective layer; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Transmitting the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating unit layer; And heat-treating the first passivation layer and the third passivation layer simultaneously with the heat energy generated by the heating element layer to deform the high-density homogeneous film.

(2) the method of manufacturing an organic light emitting display device as described in 1 above, further comprising forming an insulating film having a plurality of openings exposing the ITO layer after forming the ITO layer with the first electrode. It features.

(3) The method of manufacturing an organic light emitting display device as described in (2) above, further comprising forming a plurality of partitions on the insulating film orthogonal to the ITO layer.

(4) In the method for manufacturing an organic light emitting display device as described in 1) above, before forming the first electrode or after forming the first electrode, silver, gold, platinum, chromium, tungsten, molybdenum The method may further include forming an auxiliary electrode using at least one of a metal such as molybdenum tungsten, aluminum, aluminum alloy, or two or more composite layers.

(5) In the method of manufacturing an organic light emitting display device as described in 1), the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer. And using the second electrode as an anode layer.

(6) The method of manufacturing an organic light emitting display device as described in 1) above, wherein the organic light emitting layer comprises a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer.

(7) The method of manufacturing an organic light emitting display device as described in 1), wherein the planarization layer is selected from an organic material or a silicon-based insulating material, or is formed of two or more composite layers.

(8) The method of manufacturing an organic light emitting display device as described in 1) or 7) above, wherein the silicon-based insulating material is selected from a silicon oxide film, a silicon nitride oxide film, and a silicon nitride film, or two or more composite layers. Characterized in that formed.

(9) In the method of manufacturing an organic light emitting display device as in 1), the second protective layer includes a silicon thin film, a silicon-rich silicon nitride (SRSN), and a silicon-rich silicon oxide film (Silicon-Rich). Silicon Oxide (SRSO) and Silicon-Rich Silicon Oxi-Nitride (SRSON) may be selected or used to form one or more composite layers.

(10) In the method of manufacturing an organic light emitting display device as in 1), the second protective layer includes Ar ₂ (wavelength = 126 nm), Kr ₂ (wavelength = 146 nm), F ₂ (wavelength = 157 nm). ), Xe ₂ (wavelength = 172 nm), ArF (wavelength = 193 nm), KrF (wavelength = 248 nm), XeCl (wavelength = 308 nm), and XeF (wavelength = 351 nm) excimer laser At least one heat treatment.

(11) In the method of manufacturing an organic light emitting display device as in 1) or 10) above, a triple layer of a first protective layer, the second protective layer and the third protective layer is formed on the second electrode. It is characterized by laminating at least once.

(12) In the method of manufacturing an organic light emitting display device as in 1), the glass, AS resin, ABS resin, polypropylene (PP), polystyrene (HIPS), polymethyl methacrylate on the third protective layer An adhesive (PMMA), polycarbonate, and using one of the metal or two or more composite layers characterized in that it further comprises the step of sealing the outer protective cap.

(13) A method of manufacturing an organic light emitting display device according to the present invention includes the steps of forming a first electrode on a transparent substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode with a silicon-based insulating material on the second electrode and planarizing an upper surface thereof; The planarization layer is used as a first passivation layer, and one of a silicon thin film, a silicon excess silicon nitride film (SRSN), a silicon excess silicon oxide film (SRSO), and a silicon excess silicon nitride film (SRSON) on the first passivation layer. Selecting to form a second protective layer; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Transmitting the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating unit layer; And heat-treating the first passivation layer and the third passivation layer simultaneously with the heat energy generated by the heating element layer to deform the high-density homogeneous film.

(14) A method of manufacturing an organic light emitting display device according to the present invention comprises the steps of: forming a driving unit comprising a plurality of transistors and one or more capacitors and having a first electrode on a transparent substrate; Forming an organic light emitting layer on the first electrode of the driving unit; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode on the second electrode and planarizing an upper surface thereof; Forming a first passivation layer on the planarization layer using an insulating material based on silicon; Forming a second protective layer on the first protective layer; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Transmitting the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating unit layer; And heat-treating the first passivation layer and the third passivation layer simultaneously with the heat energy generated by the heating element layer to deform the high-density homogeneous film.

(15) The method of manufacturing an organic light emitting display device as described in (14) above, wherein the driving part formed on the transparent substrate is comprised of a driving transistor, a switching transistor, and a capacitor.

(16) The method of manufacturing the organic light emitting display device as described in (14), wherein the forming of the driving unit comprises: forming an insulating layer and a capacitance layer on the insulating layer on the transparent substrate; Forming a gate insulating film on the insulating film and the active layer; Forming a gate electrode on the insulating layer corresponding to the active layer; Forming a source and a drain electrode on the active layer; Forming a second insulating film on the transparent substrate including the gate insulating film and the gate electrode; Selectively etching the second insulating layer and the gate insulating layer corresponding to the source and the drain to form a contact hole; Forming a first electrode layer in a contact hole corresponding to a drain and a bus electrode in a contact hole corresponding to a source of the driving transistor; And forming a storage electrode connected to the capacitor on a signal line, the gate electrode of the driving transistor, and the drain of the switching transistor on a bus electrode of the switching transistor source.

(17) A method of manufacturing an organic light emitting display device as described in 14), wherein the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer. And using the second electrode as an anode layer.

(18) The method of manufacturing an organic light emitting display device as described in (14) above, wherein the organic light emitting layer includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer.

(19) The method of manufacturing an organic light emitting display device as described in (14), wherein the planarization layer is selected from an organic material or a silicon-based insulating material, or is formed of two or more composite layers.

(20) In the method of manufacturing an organic light emitting display device as described in 14) or 19), the silicon-based insulating material may be selected from one of a silicon oxide film, a silicon nitride oxide film, and a silicon nitride film, or two or more composite layers. Characterized in that formed.

(21) The method of manufacturing an organic light emitting display device as described in (14), wherein the second protective layer includes a silicon thin film, a silicon excess silicon nitride film (SRSN), a silicon excess silicon oxide film (SRSO), and a silicon excess silicon nitride film. (SRSON) is selected and used or formed into two or more composite layers.

(22) The method of manufacturing an organic light emitting display device as described in (14), wherein the second protective layer is formed of Ar ₂ , Kr ₂ , F ₂ , Xe ₂ , ArF, KrF, XeCl, and XeF excimer laser. At least one heat treatment is selected.

(23) In the method of manufacturing an organic light emitting display device as in (14) or (22), a triple layer of a first protective layer, the second protective layer, and the third protective layer is formed on the second electrode. It is characterized by laminating at least once.

(24) In the method of manufacturing an organic light emitting display device as described in (14), on the third protective layer, glass, AS resin, ABS resin, polypropylene (PP), polystyrene (HIPS), polymethyl methacrylate An adhesive (PMMA), polycarbonate, and using one of the metal or two or more composite layers characterized in that it further comprises the step of sealing the outer protective cap.

(25) A method of manufacturing an organic light emitting display device according to the present invention comprises the steps of: forming a driving unit comprising a plurality of transistors and one or more capacitors and having a first electrode on a transparent substrate; Forming an organic light emitting layer on the first electrode of the driving unit; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode with a silicon-based insulating material on the second electrode and planarizing an upper surface thereof; The planarization layer is used as a first passivation layer, and one of a silicon thin film, a silicon excess silicon nitride layer SRSN, a silicon excess silicon oxide layer SRSO, and a silicon excess silicon nitride layer SRSR is disposed on the first passivation layer. Selecting to form a second protective layer; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Transmitting the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating unit layer; And heat-treating the first passivation layer and the third passivation layer simultaneously with the heat energy generated by the heating element layer to deform the high-density homogeneous film.

Such a method of manufacturing an organic light emitting display device according to the present invention has the following effects.

According to the present invention, a silicon thin film, a silicon excess silicon nitride film (SRSN), a silicon excess silicon oxide film (SRSO), and silicon are disposed between a first protective layer and a third protective layer made of a silicon-based insulating material on an organic light emitting display device. The second protective layer is formed by passing through the third protective layer with an excimer laser beam and heat-treating the second protective layer on a triple layer stacked structure including a second protective layer composed of one of the excess silicon nitride oxides (SRSON). Melting the silicon component in the layer to form a heating unit layer (Heating Unit Layer), and the high thermal energy generated in the heating element layer in the molten state of the first protective layer and the third protective layer in contact with both sides of the heating element layer At the same time, there is an advantage that can be transformed into a high density homogeneous film by heat treatment as a whole.

In addition, in the conventional technology, since only the surface layer of the silicon-based insulating film is locally heat treated, defects such as dangling bond or porosity are present in the unheated region. Since the first heating layer and the third protective layer can be heat-treated at the same time as a whole at a high temperature as a heating element layer, there is an advantage of minimizing such fatal defects and improving the performance and reliability of the device.

In addition, in the present invention, since the protective layer is composed of a composite layer, defects such as cracks, pin holes, and dust particles in the silicon-based insulating film before the heat treatment process is performed with an excimer laser ( Even if there is a defect, it is possible not only to effectively transform the silicon-based insulating material into a high density homogeneous film, but also to improve the structural weakness caused by the extremely thin heat treated area in the prior art, thereby improving oxygen and oxygen from the outside. There is an advantage that can more effectively suppress the penetration of water and the like.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

A method of manufacturing the organic light emitting display device according to the first embodiment of the present invention will be described below.

2 is a cross-sectional view illustrating a passive organic light emitting display device according to a first embodiment of the present invention.

FIG. 2A is a cross-sectional view illustrating a passive organic light emitting display device according to a first exemplary embodiment of the present invention, in which a first protective layer, a second protective layer, and a third protective layer are sequentially stacked on a planarization layer. FIG.

FIG. 2B is a cross-sectional view of a passive organic light emitting display device according to a first exemplary embodiment of the present invention in which the planarization layer is a first protective layer, and a second protective layer and a third protective layer are sequentially stacked thereon. FIG. .

In the first embodiment of the present invention, the positive electrode layer 212 made of ITO or the like is completely laminated on the transparent substrate 211 such as transparent glass, quartz substrate, plastic substrate, etc. in a thickness of 50 kV to 3,000 kPa by the sputtering method. The first electrode 212 is formed using a patterning technique such as photolithography and etching.

In some embodiments, an opaque substrate such as a silicon substrate and a metal sheet may be used instead of the transparent substrate 211.

The sheet resistance of the positive electrode layer 212 is set to 15 kW / square or less, and the visible light transmittance is preferably close to 100%, but it can be used if it is 10% or more.

Herein, the positive electrode layer 212 uses a metal having a work function of 4.0 eV or more, an alloy, a compound having electrical conductivity, or a mixture thereof. Tin oxide (ITO), indium zinc compound (IXO), zinc oxide (TO), tin , Gold, platinum, palladium and the like are formed from a single layer or a plurality of layers, or a mixture thereof.

Before the positive electrode layer 212 is formed, silver (Ag), gold (Au), platinum (Pt), chromium (Cr), tungsten (W), molybdenum (Mo), molybdenum tungsten (MoW), Select one of metals such as aluminum (Al) and aluminum alloy to deposit the entire surface in a thickness of 100 kPa to 10,000 kPa, and form an auxiliary electrode (not shown) using patterning techniques such as photolithography and etching. It may be. Alternatively, the auxiliary electrode (not shown) may be formed after the positive electrode layer 212 is first formed on the transparent substrate 211.

And a positive type composed of polyimide, acrylic, novolak, epoxy, etc. on the transparent substrate 211 including the first electrode 212. (Positive Type) The organic insulating layer is entirely laminated with a thickness of 500 kPa to 10,000 kPa with an organic photosensitive material, and the organic insulating layer pattern 213 is formed using photolithography.

Here, instead of the organic insulating layer pattern 213, an inorganic insulating layer such as a silicon oxide film, a silicon nitride film, or the like is entirely stacked to a predetermined thickness, and then an inorganic insulating layer pattern is formed using patterning techniques such as photolithography and etching. It may be.

An electrically insulating negative type organic photosensitive material having a thickness of 5,000 kPa to 60,000 kPa is entirely stacked on the organic insulating layer pattern 213, and is orthogonal to the first electrode layer 212 using photolithography. A plurality of partition walls 214 having an inclined reverse slope structure are formed on the insulating layer.

The transparent substrate 211 including the first electrode 212, the organic insulating layer pattern 213, and the partition wall 214 is moved into a vacuum deposition apparatus, and a shadow mask is used to form the first electrode ( The organic light emitting layer 225 is formed by sequentially stacking the hole injection layer 215, the hole transport layer 216, the organic light emitting layer 217, and the electron transport layer 218 on the 212.

Here, when the organic light emitting layer 225 is laminated using a low molecular weight organic material, the hole injection layer 215 is about 10 kPa to about 1,000 kPa depending on the material, and the hole transport layer 216 is 10 depending on the material. The organic light-emitting layer 217 is laminated at a thickness of about 5 kPa to about 800 kPa, and the electron transport layer 218 is about 2 kPa to about 500 kPa depending on the material.

Here, in the case of an organic light emitting display device formed of an organic material of a high molecular form instead of the organic material of the low molecular form, a buffer layer and a polyphenylvinylene derivative (Poly (Phenylvinylene)) made of a material such as PEDOT and PSS Form an organic light emitting layer using a method such as spin coating, dipping, thermal vacuum evaporation, etc. in an organic laminated structure composed of an organic light emitting layer composed of a material such as a derivative (PPV). do. At this time, the buffer layer is formed to have a thickness of about 50 GPa to about 1,500 GPa and the organic light emitting layer is about 100 GPa to about 1,000 GPa.

In addition, a single layer or a plurality of layers of aluminum, indium, magnesium, lithium, gold, sodium, or silver, which are metals having good electrical conductivity, may be formed on the electron transport layer 218 by a method such as a thermal vacuum deposition method, an electron beam method, and sputtering. The negative electrode layer 219 composed of the mixture is laminated to a thickness of about 10 kPa to about 10,000 kPa, and the second electrode 219 is formed using a patterning technique.

In addition, lithium fluoride (LiF), lithium oxide (Li ₂ O), cesium fluoride (CsF), lithium-aluminum alloy for the purpose of increasing the electron injection efficiency between the cathode layer 219 and the electron transport layer 218. One of (Li: Al Alloy) may be formed to a thickness of about 1 kPa to about 150 kPa.

In the present invention, a planarization layer 280 is formed to cover the second electrode 219 and to planarize an upper surface thereof in order to perform a uniform heat treatment process of the second protective layer 292 described later.

Here, the planarization layer 280 is formed by depositing a low molecular weight organic material to a thickness of about 500 to 70,000 kW using a thermal vacuum deposition method, or spin coating, dipping, printing, etc., a polymer organic material. By laminating or by using a method such as CVD, sputtering, or the like, one of a silicon-based inorganic insulating material such as a silicon oxide film, a silicon nitride film, and a silicon nitride oxide film may be used, or may be formed of two or more composite layers.

In order to suppress deterioration of the organic light emitting layer 217 and the second electrode 219 due to penetration of oxygen, moisture, and the like from the outside, the second electrode 219 may be formed by a sputtering method or a chemical vapor deposition method. Select one of silicon-based insulating materials such as silicon nitride film (Si ₃ N ₄ or SiN _x ), silicon nitride oxide film (SiO _x N _y ) or silicon oxide film (SiO ₂ ) on the transparent substrate 211 including Or the entire surface is deposited with two or more composite layers to form a first protective layer 291 having a thickness of about 30 GPa to 10,000 GPa.

In the case of forming the silicon-based insulating film by the RF magnetron sputtering method, the film forming temperature is 23 ℃ to 300 ℃, using an inert gas as a carrier gas (SiN _x , SiON, SiO ₂ are each Si ₃ N ₄ , SiON, SiO ₂ targets are used.

In the case of forming the silicon-based insulating film by the reactive sputtering method, a silicon (Si) target is used at a film forming temperature of 23 ° C. to 300 ° C., and a reactive gas is injected in addition to the transport gas, which is an inert gas. _When depositing _x , N ₂ gas is injected, when depositing SiO _x N _y , O ₂ gas and N ₂ gas are injected, and when depositing SiO ₂ , O ₂ gas is injected.

In this case, when the silicon-based insulating film is formed by chemical vapor deposition, the film forming temperature is 23 ° C. to 300 ° C., an inert gas is used as the transport gas, and SiN _x is SiH ₄ , NH ₃ , N ₂ gas. As the reaction gas, SiO ₂ performs the process using SiH ₄ , N ₂ O gas as the reaction gas, and SiO _x N _y uses SiH ₄ , N ₂ O, NH ₃ , N ₂ gas as the reaction gas.

Here, the silicon-based insulating film laminated using the chemical vapor deposition method contains a large amount of hydrogen in the film, and in order to prevent the film breakdown phenomenon due to hydrogen emission during the excimer laser heat treatment described later, an excimer laser is 30 mJ / cm 2 to The hydrogen in the film may be removed by a dehydrogenation process at an energy density of about 500 mJ / cm 2.

In order to simultaneously heat-treat the first protective layer 291 and the third protective layer 293 to be described later, a silicon thin film and an excess of silicon on the first protective layer 291 by a sputtering method or a chemical vapor deposition method. Selected one of the silicon nitride film (SRSN), the silicon excess silicon oxide film (SRSO), and the silicon excess silicon nitride film (SRSON), or a total of two or more composite layers, the second protection of 10 ~ 1,500 두께 thickness Layer 292 is formed.

In the case where the RF magnetron sputtering method is used to form the second protective layer 292, the silicon thin film is subjected to a process using an inert gas as a transport gas at a film forming temperature of 23 ° C. to 300 ° C., and silicon excess silicon. The oxide film SRSO uses an inert gas as a transport gas at a film forming temperature of 23 ° C. to 300 ° C., and performs a process using SiO _x and SiN _x targets.

In this case, when the reactive sputtering method is used to form the second protective layer 292, an inert gas such as Ar is used as the transport gas at a film forming temperature of 23 ° C. to 300 ° C., and the silicon excess silicon nitride film SRSN is Si Or N ₂ gas to the Si ₃ N ₄ target as the reaction gas, silicon excess silicon oxide film (SRSO) to the Si target O ₂ gas as the reaction gas, and silicon excess silicon nitride film (SRSON) to the SiN _x target O ₂ The process is carried out using gases as reaction gases.

In the case where the chemical vapor deposition method is used to form the second protective layer 292, the film forming temperature is 23 ° C. to 300 ° C., and an inert gas is used as a transport gas, and the silicon thin film is formed of SiH ₄ , as a reaction gas. H ₂ is used, the silicon excess silicon nitride film (SRSN) uses SiH ₄ , NH ₃ , N _2, etc., and the silicon excess silicon oxide film (SRSO) uses SiH ₄ , N ₂ O, etc., and silicon excess silicon The nitride oxide film SRSON is processed using gases such as SiH ₄ , N ₂ O, NH ₃ , and N ₂ .

In order to protect the second protective layer 292 during the excimer laser heat treatment and to suppress the penetration of oxygen and moisture from the outside, the second protective layer 292 may be formed on the second protective layer 292 by a sputtering method or a chemical vapor deposition method. Select one of silicon-based insulating materials such as silicon nitride film (Si ₃ N ₄ or SiN _x ), silicon nitride oxide film (SiO _x N _y ), or silicon oxide film (SiO ₂ ), or perform full deposition on two or more composite layers. The third protective layer 293 having a thickness of about 30 Pa to 10,000 Pa is formed.

Here, the third protective layer 293 is preferably performed in the same manner as in the formation of the first protective layer 291. However, in some cases, the third protective layer 293 may be formed using various types of gas and process conditions such as flow rate, pressure, and temperature. The first protective layer 291 may be formed differently from the case of forming the first protective layer 291.

Further, in the present invention, when the first protective layer 291, the second protective layer 292, and the third protective layer 293 are laminated using one of the sputtering apparatus and the PECVD apparatus, the productivity is improved. For example, the first protective layer 291, the second protective layer 292, and the third protective layer 293 may be sequentially formed by changing only process conditions in the same process space (chamber). have.

Here, since the first protective layer 291 and the third protective layer 293 are not formed by the thermal growth method at a high temperature but are formed at a low temperature, a plurality of the first protective layer 291 and the third protective layer 293 may be formed due to incomplete bonding of silicon and nitrogen or oxygen in the film. Since it contains internal defects such as dangling bond and porosity, oxygen and moisture are easily permeated, so that the first protective layer 291 may be improved in order to improve barrier characteristics against moisture and oxygen. ) And the film quality of the third protective layer 293 should be improved.

In order to remove defects in the first protective layer 291 and the third protective layer 293, a heat treatment temperature of about 700 ° C. to 1,100 ° C. is actually required. However, such a high temperature may be applied to the organic light emitting display device. Since it has a fatal effect on other components including the light emitting layer 217, the above-mentioned problem is solved by the heat treatment method using the excimer laser mentioned later in this invention.

Subsequently, in order to improve the quality of the first protective layer 291 and the third protective layer 293, Ar ₂ (wavelength = 126 nm), Kr ₂ (wavelength = 146 nm), F ₂ (wavelength = 157 nm), Select one of Xe ₂ (wavelength = 172 nm), ArF (wavelength = 193 nm), KrF (wavelength = 248 nm), XeCl (wavelength = 308 nm), and XeF (wavelength = 351 nm) excimer laser. The second protective layer 292 is heat-generated by passing through the third protective layer 293 at an energy density of about mJ / cm 2 to about 3,000 mJ / cm 2 and heat-treating the second protective layer 292 at least once. Layer 292.

In addition, the first protective layer 291 and the third protective layer 293 which are in contact with both sides of the heating element layer 292 by the high thermal energy generated in the heating element layer 292 in the molten state as a thin film of good quality as a whole It is modified and transformed into a high density homogeneous membrane.

Since the excimer laser can complete the heat treatment process in a very short time (about 5 × 10 ^-8 seconds) with high power of light energy, the first protective layer 291 may be damaged by heat and light. The first passivation layer 291 and the third passivation layer 293 may be heat-treated uniformly at the same time at a high temperature even at room temperature without being transferred to the organic light emitting display device installed below.

That is, a triple layer stacked structure in which the second protective layer 292 made of a silicon thin film is interposed between the first protective layer 291 and the third protective layer 293 made of a silicon-based insulating material. After forming a predetermined thickness, and irradiated with XeCl or KrF excimer laser through the third protective layer 293, the silicon thin film of the second protective layer 292 while melting the second protective layer 292 ) Is instantaneously raised to the melting temperature of silicon, whereby the first protective layer 291 and the third protective layer 293 are adjacent to both sides of the heating layer 292. At the same time, the whole can be effectively heat treated at a high temperature of 1,000 ° C. or more in a short time.

Here, when one of the silicon excess silicon nitride film SRSN, the silicon excess silicon oxide film SRSO, and the silicon excess silicon nitride film SRSON is used as the second protective layer 292, the fine silicon particles present in the film are present. They are melted by the excimer laser to form the heating element layer 292.

In addition, in the present invention, if the type of excimer laser and the material constituting the first protective layer 291 and the third protective layer 293 are appropriately selected, the heat treatment effect may be further enhanced.

A laminated structure of a triple layer having the second protective layer 292 made of a silicon thin film interposed between the first protective layer 291 and the third protective layer 293 made of a silicon nitride film to a predetermined thickness. After forming, when irradiating an ArF excimer laser through the third protective layer 293, a part of the excimer laser light is absorbed by the silicon nitride film surface to partially pass the surface layer of the third protective layer 293 to 800 ° C. A portion of the excimer laser light that is used to heat-treat at a high temperature of the third passivation layer 293 melts the silicon thin film of the second passivation layer 292 to the first passivation layer 291 and the third. A portion of the excimer laser light, which is used to heat the protective layer 293 at the same time as a whole at a temperature of 1,000 ° C. or more, and has passed through the second protective layer 292, partially moves the surface layer of the first protective layer 291 to about 800 ° C. Heat at high temperature Can be used to obtain a double heat treatment effect by light energy and thermal energy.

In this case, in order to further improve the barrier property, a laminated structure of a triple layer of the first protective layer 291, the second protective layer 292, and the third protective layer 293 is continuously laminated to form a film. A stack of a plurality of triple layers including a first protective layer 291, the second protective layer 292, the third protective layer 293, the second protective layer 292, and the third protective layer 293. It may also form a structure. The first passivation layer 291 may be formed of the third passivation layer 293, and the third passivation layer 293 may be formed of the first passivation layer 291.

In addition, when the planarization layer 280 is formed of a silicon-based inorganic insulating material as shown in FIG. 2B, the planarization layer 2280 formed of a silicon-based insulating material is first protected to simplify the manufacturing process. The layer 2280 may be used, and the second protective layer 292 and the third protective layer 293 may be sequentially stacked thereon to form a triple layer stacked structure.

The glass, AS resin, ABS resin, polypropylene (PP), polystyrene (HIPS), and polymethyl methacrylate to cover the above-described structure including the third protective layer 293 on the transparent substrate 211. The mechanical strength of the triple layer structure may be reinforced by using one of acid (PMMA), polycarbonate, and metal or adhesively encapsulating the outer protective cap with two or more composite layers.

In the present invention, the cathode layer 219 may be formed on the transparent substrate 211 instead of the anode layer 212, and the anode layer 212 may be formed later.

The organic light emitting display device according to the first exemplary embodiment of the present invention is injected through the hole transport layer 216 existing between two electrodes when a voltage is applied to the first electrode 212 and the second electrode 219. As the electrons injected through the hole and the electron transport layer 218 meet and recombine in the organic light emitting layer 217, the electrons are excited and fall to the ground state to emit light.

Hereinafter, a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention will be described.

The organic light emitting display device can be applied as a lighting device in addition to the display device. The organic light emitting lighting device manufactured using the organic light emitting body can be manufactured with various types of light sources such as point light source, linear light source, and surface light source, and has excellent characteristics in terms of energy efficiency, eco-friendliness and sensitivity. It is attracting attention as a lighting.

In addition, the organic light emitting lighting device can be manufactured as a light and thin large sized light source, and has excellent color and color of light, does not generate heat when driven, and consumes less power than other lighting methods. It is expected to create a huge market in the future in various fields such as home appliances, industry, medicine, agriculture, etc. because it has excellent characteristics such as not causing fatigue to the eyes.

In addition, the organic light emitting lighting device has an advantage that the design of the induction of the design is very high compared to the conventional fluorescent or LED lighting because the lighting device can be manufactured in various forms on the flexible substrate.

3 is a cross-sectional view of the organic light emitting display device for illumination according to the second embodiment of the present invention.

3A is a cross-sectional view illustrating a process of an organic light emitting display device according to a second exemplary embodiment of the present invention in which a first protective layer, a second protective layer, and a third protective layer are sequentially stacked on a planarization layer.

3B is a cross-sectional view illustrating a process cross-sectional view of an organic light emitting display device for lighting according to a second exemplary embodiment of the present invention, in which a planarization layer is a first protective layer, and a second protective layer and a third protective layer are sequentially stacked thereon. .

In the second embodiment of the present invention, as shown in the first embodiment of the present invention, a positive electrode layer 312 made of ITO or the like is formed on a transparent substrate 311, such as a transparent glass, a quartz substrate, a flexible plastic substrate, or the like by a sputtering method. The whole surface is laminated | stacked by the thickness of Å-3,000Å, and the 1st electrode 312 is formed using a patterning technique.

Here, the first electrode 312 may be patterned using a patterning technique such as photolithography and etching, or may be directly patterned using a laser etching technique.

In some embodiments, an opaque substrate such as a silicon substrate and a metal sheet may be used instead of the transparent substrate 311.

And before forming the positive electrode layer 312 in the same manner as in the first embodiment of the present invention, silver (Ag), gold (Au), platinum (Pt), chromium (Cr), tungsten (W), Select one of metals such as molybdenum (Mo), molybdenum tungsten (MoW), aluminum (Al), aluminum alloy, etc., and deposit the entire surface in a thickness of 100 kPa to 10,000 kPa, and use patterning techniques such as photolithography and etching. An auxiliary electrode (not shown) may be formed. Alternatively, the positive electrode layer 312 may be first formed on the transparent substrate 311, and then the auxiliary electrode (not shown) may be formed.

Alternatively, the auxiliary electrode may be formed of silver (Ag) by using a screen printing technique, and a silver paste having a thickness of about 5,000 mm to about 60,000 mm may be used as a printing material.

The polyimide, acrylic, and novolak systems are formed on the transparent substrate 311 including the first electrode 312 in the same manner as in the first embodiment of the present invention. An organic insulating layer is formed of an organic photosensitive material composed of epoxy or the like, and the organic insulating layer pattern 313 is formed by using a photolithography technique.

The organic insulating layer pattern 313 may be formed using a screen printing technique, and as a printing material, a high viscosity polyimide, acrylic, novolak, and epoxy ( Select one of the epoxy-based organic insulating materials and form a thickness of 5,000 Å ~ 60,000 Å.

Here, instead of the organic insulating layer pattern 313, an inorganic insulating layer such as a silicon oxide film, a silicon nitride film, and a silicon nitride oxide film is entirely stacked to a predetermined thickness, and then an inorganic insulating layer is formed by using patterning techniques such as photolithography and etching. It can also be used to form a pattern.

The transparent substrate 311 including the first electrode 312 and the organic insulating layer pattern 313 is moved into a vacuum deposition apparatus in the same manner as in the first embodiment of the present invention, and a shadow mask is used to The organic light emitting layer 325 is formed by sequentially stacking the hole injection layer 315, the hole transport layer 316, the organic light emitting layer 317, and the electron transport layer 318 on the first electrode 312.

Here, when the organic light emitting layer 325 is laminated using a low molecular organic material, the hole injection layer 315 is about 10 kPa to about 1,000 kPa depending on the material, and the hole transport layer 316 is 10 depending on the material. The organic light emitting layer 317 is laminated at a thickness of about 5 kPa to about 800 kPa, and the electron transport layer 318 is about 2 kPa to about 500 kPa depending on the material.

Herein, in the case of the organic light emitting display device formed of an organic material having a high molecular weight instead of the low molecular organic material by the same method as the first embodiment of the present invention, a buffer layer made of a material such as PEDOT and PSS, etc. And an organic light emitting layer composed of an organic light emitting layer composed of a material such as poly (Phenylvinylene) Derivative (PPV) and the like by spin coating, dipping, and thermal vacuum deposition to form an organic light emitting layer. . At this time, the buffer layer is formed to a thickness of about 50 GPa to about 1,500 GPa, and the organic light emitting layer is about 100 GPa to 1,000 GPa.

In the same manner as in the first embodiment of the present invention, a single layer or a plurality of layers, or a mixture of aluminum, indium, magnesium, lithium, gold, sodium, or silver, which are metals having good electrical conductivity, are formed on the electron transport layer 318. The negative electrode layer 319 consisting of the above is laminated to a thickness of about 10 kPa to about 10,000 kPa, and the second electrode 319 is formed using a patterning technique.

In addition, lithium fluoride (LiF) and lithium oxide (Li ₂ O) for the purpose of increasing the electron injection efficiency between the cathode layer 319 and the electron transport layer 318 in the same manner as in the first embodiment of the present invention. , One of cesium fluoride (CsF) and a lithium-aluminum alloy (Li: Al Alloy) may be formed to a thickness of about 1 kPa to about 150 kPa.

In addition, the planarization layer 380 covering the second electrode 319 and planarizing an upper surface thereof in order to proceed a uniform heat treatment process of the second protective layer 392 described later in the same manner as in the first embodiment of the present invention. ) May be formed.

Here, the planarization layer 380 is formed by depositing a low molecular weight organic material to a thickness of about 500 to 70,000 kW using a thermal vacuum deposition method, or spin coating, dipping, printing, etc., a high molecular weight organic material. By laminating or by using a method such as CVD, sputtering, or the like, one of a silicon-based inorganic insulating material such as a silicon oxide film, a silicon nitride film, and a silicon nitride oxide film may be used, or may be formed of two or more composite layers.

In order to suppress deterioration of the organic light emitting layer 317 and the second electrode 319 due to penetration of oxygen and moisture from the outside in the same manner as in the first embodiment of the present invention, a sputtering method or a chemical vapor deposition method, etc. The silicon nitride film (Si ₃ N ₄ or SiN _x ), the silicon nitride film (SiO _x N _y ) or the silicon oxide film (SiO ₂ ) on the transparent substrate 311 including the second electrode 319 by One of the silicon-based insulating materials may be selected and used, or may be laminated in front of two or more composite layers to form a first protective layer 391 having a thickness of about 30 GPa to 10,000 GPa.

In order to simultaneously heat-treat the first protective layer 391 and the third protective layer 393, which will be described later, in the same manner as in the first embodiment of the present invention, the first protection may be performed by a sputtering method or a chemical vapor deposition method. On the layer 391, one of a silicon thin film, a silicon excess silicon nitride film (SRSN), a silicon excess silicon oxide film (SRSO), and a silicon excess silicon nitride film (SRSON) may be selected, or may be laminated in front of two or more composite layers, A second protective layer 392 having a thickness of about 10 kPa to about 1,500 kPa is formed.

In the same manner as in the first embodiment of the present invention, a silicon nitride film (Si ₃ N ₄ or SiN _x ) and a silicon nitride oxide film (SiO) are formed on the second protective layer 392 by a sputtering method or a chemical vapor deposition method. _x N _y ) or a silicon-based insulating material such as a silicon oxide film (SiO ₂ ) is used, or the entire surface is deposited with two or more composite layers to form a third protective layer 393 having a thickness of about 30 μm to 10,000 μm. Form.

Here, as in the first embodiment of the present invention, it is preferable that the third protective layer 393 be processed in the same manner as when the first protective layer 391 is formed, but in some cases, the kind and flow rate of the gas Process conditions such as pressure, temperature, and the like may be performed differently from when the first protective layer 391 is formed.

In addition, as in the first embodiment of the present invention, the first protective layer 391, the second protective layer 392, and the third protective layer 393 are laminated using one of the sputtering apparatus and the PECVD apparatus. In this case, only the first protective layer 391, the second protective layer 392, and the third protective layer 393 are sequentially changed in the same process space (chamber) to improve productivity. It may be formed by continuous deposition.

In order to improve the quality of the first protective layer 391 and the third protective layer 393 in the same manner as in the first embodiment of the present invention, Ar ₂ (wavelength = 126 nm) and Kr ₂ (wavelength = 146 nm) ), F ₂ (wavelength = 157 nm), Xe ₂ (wavelength = 172 nm), ArF (wavelength = 193 nm), KrF (wavelength = 248 nm), XeCl (wavelength = 308 nm), and XeF (wavelength = 351) nm) select one of the excimer lasers, pass through the third protective layer 393 at an energy density of about 50 mJ / cm 2 to 3,000 mJ / cm 2 to heat-treat the second protective layer 392 at least once, The second protective layer 392 may be the heating element layer 392.

In the same manner as in the first embodiment of the present invention, the first protective layer 391 and the third protective layer which are in contact with both surfaces of the heating element layer 392 with high thermal energy generated in the heating element layer 392 in a molten state. The layer 393 is simultaneously modified into a high quality thin film as a whole and transformed into a high density homogeneous film.

In order to further improve barrier characteristics in the same manner as in the first embodiment of the present invention, the triple layer of the first protective layer 391, the second protective layer 392, and the third protective layer 392 may be used. The laminated structure was successively laminated to form the first protective layer 391, the second protective layer 392, the third protective layer 393, the second protective layer 392, and the third protective layer. It is also possible to form a laminated structure of a plurality of triple layers composed of 393. The first passivation layer 391 may be formed of the third passivation layer 393, and the third passivation layer 393 may be formed of the first passivation layer 391.

In addition, when the planarization layer 3380 is formed of a silicon-based inorganic insulating material as shown in FIG. 3B, the planarization layer 3380 formed of a silicon-based insulating material is first protected to simplify the manufacturing process. The layer 3380 may be used, and the second protective layer 392 and the third protective layer 393 may be sequentially stacked thereon to form a triple layer stacked structure.

In the same manner as in the first embodiment of the present invention, the glass, AS resin, ABS resin, and polypropylene (PP) are covered on the transparent substrate 311 to cover the above-described structure including the third protective layer 393. It is also possible to reinforce the mechanical strength of the triple layer structure by using one of polystyrene (HIPS), polymethyl methacrylate (PMMA), polycarbonate, and metal or adhesively sealing the outer protective cap with two or more composite layers. .

As in the first embodiment of the present invention, the cathode layer 319 may be formed on the transparent substrate 311 instead of the anode layer 312, and the anode layer 312 may be formed later.

The organic light emitting display device according to the second exemplary embodiment of the present invention is injected through the hole transport layer 316 existing between two electrodes when a voltage is applied to the first electrode 312 and the second electrode 319. The electrons injected through the hole and the electron transport layer 318 meet in the organic light emitting layer 317 to be recombined, and after the electrons are excited, fall to the ground to emit light.

Hereinafter, a method of manufacturing an organic light emitting display device according to a third embodiment of the present invention will be described.

An active organic light emitting display device includes a switching thin film transistor and an organic light emitting display device which serve as a switch for writing a driving voltage applied through a data line in each pixel to a gate terminal of a driving thin film transistor. Based on driving thin film transistor, which drives the OLED by injecting electric current, and data storage capacitance, which maintains the voltage of the driving thin film transistor gate stage for one frame. The circuit is configured by the method, and the number and arrangement of transistors and capacitances vary according to the configuration method.

Such active organic light emitting display devices may be fabricated by Zn such as Poly-Si TFT, amorphous silicon TFT, IGZO (InGaZnO), which will be described later on various substrates such as transparent glass substrates, transparent flexible substrates, metal substrates, quartz substrates, and silicon substrates. A process of manufacturing a backplane on which one of -O series oxide semiconductor TFTs is mounted, and a process of mounting an organic light emitting display device thereon, are included.

4 is a cross-sectional view of an active organic light emitting display device according to a third exemplary embodiment of the present invention.

4A is a cross-sectional view of an active organic light emitting display device according to a third exemplary embodiment of the present invention, in which a first protective layer, a second protective layer, and a third protective layer are sequentially stacked on a planarization layer.

FIG. 4B is a cross-sectional view of an active organic light emitting display device according to a third exemplary embodiment of the present invention, in which a planarization layer is a first protective layer, and a second protective layer and a third protective layer are sequentially stacked thereon. FIG. .

In the third embodiment of the present invention, an inorganic material such as a silicon oxide film, a silicon nitride film, or the like is fabricated by using a sputtering method and a CVD method such as thermal CVD, PECVD, and APCVD on the transparent substrate 411 to fabricate an active organic light emitting display device. The insulating layer is entirely stacked to a thickness of about 1,000 to 5,000 Å to form a buffer layer 441, and then, on the buffer layer 441, a thickness of about 100 to about 1,500 으로 by PECVD or sputtering. Amorphous silicon is laminated.

In some embodiments, an opaque substrate such as a silicon substrate and a metal sheet may be used instead of the transparent substrate 411.

In order to prevent film damage of the amorphous silicon caused by the hydrogen jet generated during laser heat treatment, KrF (wavelength = 248 nm) after a dehydrogenation process at a temperature of about 200 ° C to 450 ° C for about 30 minutes to 1 hour. , Using an excimer laser such as ArF (wavelength = 193 nm) and XeCl (wavelength = 308 nm) at an energy density of 50 mJ / cm 2 to 1,500 mJ / cm 2 at a temperature of 23 ° C. to 400 ° C. Heat treatment to form a Poly-Si thin film, and to form an island-like active layer 442 by using a patterning technique such as photolithography and etching.

Although not shown in the drawing, after implanting a certain amount of ions such as boron or phosphorus into a portion to form a storage capacitance layer using a technique such as lithography and ion implantation, the excimer laser such as KrF, ArF, XeCl, etc. Using a heat treatment process at an energy density of about 50 mJ / cm 2 to 500 mJ / cm 2 at a temperature of 23 ° C. to 400 ° C. to activate the implanted ions.

Then, a gate insulating film layer 443 is formed by stacking a silicon oxide film or a silicon nitride film on the buffer layer 441 and the active layer 442 with a thickness of 1,000 GPa to 5,000 GPa by a method such as PECVD.

In addition, chromium (Cr), tungsten (W), molybdenum (Mo), and molybdenum tungsten (Mo-) are formed on the gate insulating layer 443 corresponding to the active layer 442 by a sputtering method or a PECVD method. W), one of metals such as aluminum (Al), aluminum alloy, Cu, Ag, Au, and the like, and the entire thickness of about 1,000 kPa to 5,000 kPa, and the active layer (using photolithography and patterning techniques such as etching) A gate electrode 444 is formed on the gate insulating layer 443 corresponding to 442.

When the backplane 440 to be described later is configured using an N-channel transistor, predetermined phosphorus ions are implanted using an ion implanter into a region of the first contact hole 4452 described later on the active layer 442. To form N ⁺ region 4451. However, although not shown in FIG. 4, in the case of using a P-channel transistor, a predetermined boron ion is implanted into the active layer 442 to form a P ⁺ region.

In order to improve the short channel effect of the TFT due to hot carriers, in the case of the N channel, the channel is adjacent to the channel of the N ⁺ region 4451 rather than the N ⁺ 4445 region. A lightly doped drain layer (LDD) structure may be formed by implanting a small amount of ions to form the N ⁻ region 4401. For the P channel adjacent to inject a small amount of ions than the P ⁺ region to the inside of the channel region P ⁺ P ^- to form the LDD structure in the installation area.

In addition, the N ⁻ region 4401 implanted with predetermined ions is activated by heat treatment with an excimer laser. In the case of the P channel, the P ⁻ region is activated by heat treatment with an excimer laser.

And a second insulating film on the transparent substrate 411 including the gate insulating film 443 and the gate electrode 444 by using a silicon oxide film or a silicon nitride film having a thickness of about 2,000 kV to about 10,000 kPa by a method such as PECVD. After stacking the 445, the first contact hole 4452 is formed using a patterning technique such as photolithography and etching.

And sputtering method is one of metals such as chromium (Cr), tungsten (W), molybdenum (Mo), molybdenum tungsten (Mo-W), aluminum (Al), aluminum alloy, Cu, Ag, Au, etc. Selectively use or source-drain metal (source-drain metal) in two or more composite layers to the entire thickness of 500 ~ 5,000 Å thickness, and using the patterning techniques such as photolithography and etching, the first contact hole ( 4452 is embedded to form a source electrode 446 and a drain electrode 447.

Here, a bus electrode is provided in a contact hole corresponding to the source region of the driving thin film transistor, a signal line is provided on the bus electrode of the source region of the switching thin film transistor, and a gate electrode of the driving thin film transistor and the switching thin film transistor A storage electrode connected to the capacitor is formed in the drain region.

In order to protect the TFT devices fabricated by using the PECVD method, a third insulating film 448 is formed by entirely stacking a silicon oxide film or silicon nitride film having a thickness of about 3,000 to 10,000 두께, and a patterning technique such as photolithography and etching. The second contact hole 4481 is formed in the drain region of the driving thin film transistor on the third insulating film 448 by using the C-type transistor.

Subsequently, the ITO electrode having a thickness of about 300 to about 1,000 mm is stacked by a sputtering method, and the first electrode 412 including the ITO positive electrode layer 412 is formed in a region where the display portion including the second contact hole 4481 is to be formed. Form. The ITO positive electrode layer 412 is used as a positive electrode for light emission of the organic light emitting display device.

In addition, a photosensitive polyimide having a thickness of about 500 to 20,000 mm is coated on the entire surface, and a predetermined region of the ITO electrode 412 is exposed by using photolithography technology to define a display unit of the organic light emitting display device. 413).

Here, instead of the organic insulating material such as the photosensitive polyimide, an inorganic insulating material such as a silicon oxide film or a silicon nitride film is entirely stacked to a predetermined thickness, and then an inorganic insulating layer pattern is formed using patterning techniques such as photolithography and etching. You may.

In the same manner as in the first embodiment of the present invention, the I-electrode 412 having the predetermined region is exposed by moving the Poly-Si TFT backplane 440 having the organic insulating layer pattern 413 formed therein into a vacuum deposition apparatus. 10 to 1000 kPa thick hole injection layer 415, 10 kPa to 1,000 kPa transport layer 416, 5 kPa to 800 kPa organic light emitting layer 417, 2 kPa to 50 kPa The electron transport layer 418 or the like is sequentially stacked using an organic material having a low molecular weight to form an organic light emitting layer 425.

Here, in the case of the organic light emitting display device formed of an organic material of a polymer form instead of the organic material of the low molecular form as in the first embodiment of the present invention, a buffer layer and a poly and a buffer layer made of a material such as PDS and PSS The organic laminated structure composed of an organic light emitting layer composed of a material such as poly (Phenylvinylene) Derivative (PPV), such as spin coating, dipping, thermal vacuum evaporation, etc. The organic electroluminescent layer is formed using the method. At this time, the buffer layer is formed to have a thickness of about 50 GPa to about 1,500 GPa and the organic light emitting layer is about 100 GPa to about 1,000 GPa.

And the negative electrode layer composed of aluminum, indium, magnesium, lithium, gold, sodium or silver on the electron transport layer 418 in a single layer or a plurality of layers, or a mixture thereof in the same manner as in the first embodiment of the present invention ( 419) is laminated to a thickness of about 10 kPa to about 10,000 kPa, and the second electrode 419 is formed using a patterning technique.

Further, in order to increase the electron injection efficiency between the second electrode 419 and the electron transport layer 418, lithium fluoride (LiF), lithium oxide (Li ₂ O), and cesium fluoride (CsF) having a thickness of about 1 to 150 kW. ) And one of the lithium-aluminum alloy (Li: Al Alloy).

In addition, the planarization layer 480 covering the second electrode 419 and planarizing an upper surface thereof in order to proceed the uniform heat treatment process of the second protective layer 492 described later in the same manner as in the first embodiment of the present invention. ) May be formed.

Here, the planarization layer 480 is formed by depositing a low molecular weight organic material in a thickness of about 500 to 30,000 kW using a thermal vacuum deposition method, or spin coating, dipping, printing, etc., a polymer type organic material. By laminating or by using a method such as CVD, sputtering, or the like, one of a silicon-based inorganic insulating material such as a silicon oxide film, a silicon nitride film, and a silicon nitride oxide film may be used, or may be formed of two or more composite layers.

In order to suppress deterioration of the organic light emitting layer 417 and the second electrode 419 due to penetration of oxygen and moisture from the outside in the same manner as in the first embodiment of the present invention, a sputtering method or a chemical vapor deposition method, etc. The silicon nitride film (Si ₃ N ₄ or SiN _x ), the silicon nitride oxide film (SiO _x N _y ) or the silicon oxide film (SiO ₂ ) on the transparent substrate 411 including the second electrode 419. One of the silicon-based insulating materials may be selected and used, or may be entirely laminated with two or more composite layers to form a first protective layer 491 having a thickness of about 30 to about 10,000 kPa.

In order to simultaneously heat-treat the first protective layer 491 and the third protective layer 493, which will be described later, in the same manner as in the first embodiment of the present invention, the first protection may be performed by a method such as a sputtering method or a chemical vapor deposition method. On the layer 491, one of a silicon thin film, a silicon excess silicon nitride film (SRSN), a silicon excess silicon oxide film (SRSO), and a silicon excess silicon nitride film (SRSON) may be selected or laminated in front of two or more composite layers, A second protective layer 492 having a thickness of about 10 kPa to about 1,500 kPa is formed.

In the same manner as in the first embodiment of the present invention, a silicon nitride film (Si ₃ N ₄ or SiN _x ) and a silicon nitride oxide film (SiO _x ) are formed on the second protective layer 492 by a sputtering method or a chemical vapor deposition method. Select one of a silicon-based insulating material such as N _y ) or a silicon oxide film (SiO ₂ ), or deposit the entire surface with two or more composite layers to form a third protective layer 493 having a thickness of about 30 μm to about 10,000 μm. .

Here, as in the first embodiment of the present invention, it is preferable that the third protective layer 493 be processed in the same manner as the first protective layer 491 is formed. Process conditions such as pressure, temperature, and the like may be performed differently from when the first protective layer 491 is formed.

In addition, as in the first embodiment of the present invention, the first protective layer 491, the second protective layer 492, and the third protective layer 493 are laminated using one of the sputtering apparatus and the PECVD apparatus. In this case, only the first protective layer 491, the second protective layer 492, and the third protective layer 493 are sequentially changed in the same process space (chamber) to improve productivity. It may be formed by continuous deposition.

In order to improve the quality of the first protective layer 491 and the third protective layer 493 in the same manner as in the first embodiment of the present invention, Ar ₂ (wavelength = 126 nm) and Kr ₂ (wavelength = 146 nm) ), F ₂ (wavelength = 157 nm), Xe ₂ (wavelength = 172 nm), ArF (wavelength = 193 nm), KrF (wavelength = 248 nm), XeCl (wavelength = 308 nm), and XeF (wavelength = 351) nm) select one of the excimer lasers, pass through the third protective layer 493 at an energy density of about 50 mJ / cm 2 to 3,000 mJ / cm 2 to heat-treat the second protective layer 492 at least once, The second protective layer 492 may be the heating element layer 492.

In the same manner as in the first embodiment of the present invention, the first protective layer 491 and the third protective layer which are in contact with both surfaces of the heating element layer 492 by high thermal energy generated in the heating element layer 492 in a molten state. The layer 493 is simultaneously modified to a high quality thin film as a whole and transformed into a high density homogeneous film.

In order to further improve barrier characteristics in the same manner as in the first embodiment of the present invention, the triple layer of the first protective layer 491, the second protective layer 492, and the third protective layer 493 may be used. The laminated structure was successively laminated to form the first protective layer 491, the second protective layer 492, the third protective layer 493, the second protective layer 492, and the third protective layer. It is also possible to form a laminated structure of a plurality of triple layers composed of 493. The first passivation layer 491 may be formed of the third passivation layer 493, and the third passivation layer 493 may be formed instead of the first passivation layer 491.

In addition, when the planarization layer 4480 is formed of a silicon-based inorganic insulating material as shown in FIG. 4B, the planarization layer 4480 formed of a silicon-based insulating material is first protected to simplify the manufacturing process. The layer 4451 may be used, and the second protective layer 492 and the third protective layer 493 may be sequentially stacked thereon to form a triple layer stacked structure.

And glass, AS resin, ABS resin, polypropylene (PP) to cover the above-described structure including the third protective layer 493 on the transparent substrate 411 in the same manner as in the first embodiment of the present invention. It is also possible to reinforce the mechanical strength of the triple layer structure by using one of polystyrene (HIPS), polymethyl methacrylate (PMMA), polycarbonate, and metal or adhesively sealing the outer protective cap with two or more composite layers. .

As in the first embodiment of the present invention, the cathode layer 419 may be formed on the transparent substrate 411 instead of the anode layer 412, and the anode layer 412 may be formed later.

The active organic light emitting display device according to the third embodiment of the present invention uses a transistor on the backplane 440 to apply a voltage between the positive electrode layer 412 and the negative electrode layer 419 of a pixel at a selective position. When applied, the ground state after the electrons are excited as the holes injected through the hole transport layer 416 existing between the two electrodes and the electrons injected through the electron transport layer 418 meet and recombine in the organic light emitting layer 417. To emit light.

Preferred embodiments of the present invention are disclosed for the purpose of illustration, and those skilled in the art will be able to make various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications and changes belong to the scope of the claims Should be seen.

1 is a process sectional view of an organic light emitting display device of the prior art.

2 is a cross-sectional view of a passive organic light emitting display device according to a first embodiment of the present invention.

FIG. 2A is a cross-sectional view illustrating a passive organic light emitting display device according to a first exemplary embodiment of the present invention, in which a first protective layer, a second protective layer, and a third protective layer are sequentially stacked on a planarization layer. FIG.

FIG. 2B is a cross-sectional view of a passive organic light emitting display device according to a first exemplary embodiment of the present invention in which the planarization layer is a first protective layer, and a second protective layer and a third protective layer are sequentially stacked thereon. FIG. .

3 is a cross-sectional view of the organic light emitting display device for illumination according to the second embodiment of the present invention.

3A is a cross-sectional view illustrating a process of an organic light emitting display device according to a second exemplary embodiment of the present invention in which a first protective layer, a second protective layer, and a third protective layer are sequentially stacked on a planarization layer.

3B is a cross-sectional view illustrating a process cross-sectional view of an organic light emitting display device for lighting according to a second exemplary embodiment of the present invention, in which a planarization layer is a first protective layer, and a second protective layer and a third protective layer are sequentially stacked thereon. .

4 is a cross-sectional view of an active organic light emitting display device according to a third exemplary embodiment of the present invention.

4A is a cross-sectional view of an active organic light emitting display device according to a third exemplary embodiment of the present invention, in which a first protective layer, a second protective layer, and a third protective layer are sequentially stacked on a planarization layer.

FIG. 4B is a cross-sectional view of an active organic light emitting display device according to a third exemplary embodiment of the present invention, in which a planarization layer is a first protective layer, and a second protective layer and a third protective layer are sequentially stacked thereon. FIG. .

DESCRIPTION OF THE REFERENCE NUMERALS

111, 211, 311, and 411: transparent substrates 112, 212, 312, and 412: positive electrode layer (first electrode)

213, 313, 413: organic insulating layer pattern 214: partition wall

115, 215, 315, 415: hole injection layer 116, 216, 316, 416: hole transport layer

117, 217, 317, 417: organic light emitting layer 118, 218, 318, 418: electron transport layer

225, 325, 425: organic light emitting layer 119, 219, 319, 419: negative electrode layer (second electrode)

440: backplane 213, 313, 413: organic insulating layer pattern

280, 380, 480: planarization layer 2280, 3380. 4480: planarization layer (first protective layer)

291, 391, 491: 1st protective layer 2280, 3380. 4480: 1st protective layer (planarization layer)

292, 392, 492: second protective layer (heating element layer)

293, 393, 493: third protective layer

441: buffer layer 442: active layer 443: gate insulating film 444: gate electrode

445: Second insulating film 448: Third insulating film 446 Source electrode 447: Drain electrode

4451: N ⁺ region 4441: N ^- region 4452: first contact hole 4481: second contact hole

Claims (25)

Forming a first electrode on the transparent substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode on the second electrode and planarizing an upper surface thereof; Forming a first passivation layer on the planarization layer using an insulating material based on silicon; Forming a second protective layer on the first protective layer; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Passing the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating element layer; And heat-treating the first protective layer and the third protective layer simultaneously with the heat energy generated by the heating element layer to transform the first protective layer and the third protective layer into a high density homogeneous film. The method of claim 1, wherein after forming an ITO layer with the first electrode, And forming an insulating layer having a plurality of openings exposing the ITO layer. 3. The method of claim 2, And forming a plurality of barrier ribs on the insulating film orthogonal to the ITO layer. The method of claim 1, Before forming the first electrode or after forming the first electrode, one of metals such as silver, gold, platinum, chromium, tungsten, molybdenum, molybdenum tungsten, aluminum, aluminum alloy, etc. may be selected or used. A method of manufacturing an organic light emitting display device, characterized in that it further comprises the step of forming an auxiliary electrode with the above composite layer. The method of claim 1, An organic light emitting display, characterized in that the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer and the second electrode is used as the anode layer. Method of manufacturing the device. The method of claim 1, The organic electroluminescent layer includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and a method for manufacturing an organic light emitting display device comprising an electron injection layer. The method of claim 1, The planarization layer is a method of manufacturing an organic light emitting display device, characterized in that used by selecting one of an organic material or a silicon-based insulating material or formed of two or more composite layers. The method according to claim 1 or 7, The silicon-based insulating material may be selected from one of a silicon oxide film, a silicon nitride oxide film, and a silicon nitride film, or may be formed of two or more composite layers. The method of claim 1, The second passivation layer may be one of a silicon thin film, a silicon excess silicon nitride film, a silicon excess silicon oxide film, and a silicon excess silicon nitride film, or may be formed of two or more composite layers to manufacture an organic light emitting display device. Way. The method of claim 1, The second protective layer is selected from Ar ₂ , Kr ₂ , F ₂ , Xe ₂ , ArF, KrF, XeCl, and XeF excimer laser to heat treatment at least once, characterized in that the manufacturing method of the organic light emitting display device. The method according to claim 1 or 10, A method of manufacturing an organic light emitting display device, characterized in that the first protective layer, the second protective layer, and a triple layer of the third protective layer are laminated at least once on the second electrode. The method of claim 1, One or more composite layers of one of glass, AS resin, ABS resin, polypropylene (PP), polystyrene (HIPS), polymethyl methacrylate (PMMA), polycarbonate, and metal on the third protective layer The method of manufacturing an organic light emitting display device, characterized in that it further comprises the step of sealing the outer protective cap. Forming a first electrode on the transparent substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode with a silicon-based insulating material on the second electrode and planarizing an upper surface thereof; The planarization layer is used as a first passivation layer, and a second passivation layer is formed on the first passivation layer by selecting one of a silicon thin film, a silicon excess silicon nitride film, a silicon excess silicon oxide film, and a silicon excess silicon nitride film. Making; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Passing the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating element layer; And heat-treating the first protective layer and the third protective layer simultaneously with the heat energy generated by the heating element layer to transform the first protective layer and the third protective layer into a high density homogeneous film. Forming a driving unit including a plurality of transistors and one or more capacitors and having a first electrode on the transparent substrate; Forming an organic light emitting layer on the first electrode of the driving unit; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode on the second electrode and planarizing an upper surface thereof; Forming a first passivation layer on the planarization layer using an insulating material based on silicon; Forming a second protective layer on the first protective layer; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Passing the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating element layer; And heat-treating the first protective layer and the third protective layer simultaneously with the heat energy generated by the heating element layer to transform the first protective layer and the third protective layer into a high density homogeneous film. The method of claim 14, The driving unit formed on the transparent substrate is a manufacturing method of an organic light emitting display device comprising a driving transistor, a switching transistor and a capacitor. The method of claim 15, wherein the forming of the driving unit includes: Forming an insulating layer and an active layer and a capacitance layer on the insulating layer on the transparent substrate; Forming a gate insulating film on the insulating film and the active layer; Forming a gate electrode on the insulating layer corresponding to the active layer; Forming a source and a drain electrode on the active layer; Forming a second insulating film on the transparent substrate including the gate insulating film and the gate electrode; Selectively etching the second insulating film and the gate insulating film corresponding to the source and the drain to form a contact hole; Forming a first electrode layer in a contact hole corresponding to a drain and a bus electrode in a contact hole corresponding to a source of the driving transistor; And forming a storage electrode connected to the capacitor on a signal line, the gate electrode of the driving transistor, and the drain of the switching transistor on a bus electrode of the switching transistor source. Manufacturing method. The method of claim 14, An organic light emitting display, characterized in that the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer and the second electrode is used as the anode layer. Method of manufacturing the device. The method of claim 14, The organic electroluminescent layer includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and a method for manufacturing an organic light emitting display device comprising an electron injection layer. The method of claim 14, The planarization layer is a method of manufacturing an organic light emitting display device, characterized in that used by selecting one of an organic material or a silicon-based insulating material or formed of two or more composite layers. The method of claim 14 or 19, The silicon-based insulating material may be selected from one of a silicon oxide film, a silicon nitride oxide film, and a silicon nitride film, or may be formed of two or more composite layers. The method of claim 14, The second passivation layer may be one of a silicon thin film, a silicon excess silicon nitride film, a silicon excess silicon oxide film, and a silicon excess silicon nitride film, or may be formed of two or more composite layers to manufacture an organic light emitting display device. Way. The method of claim 14, The second protective layer is selected from Ar ₂ , Kr ₂ , F ₂ , Xe ₂ , ArF, KrF, XeCl, and XeF excimer laser to heat treatment at least once, characterized in that the manufacturing method of the organic light emitting display device. The method of claim 14 or 22, A method of manufacturing an organic light emitting display device, characterized in that the first protective layer, the second protective layer, and a triple layer of the third protective layer are laminated at least once on the second electrode. The method of claim 14, One or more composite layers of one of glass, AS resin, ABS resin, polypropylene (PP), polystyrene (HIPS), polymethyl methacrylate (PMMA), polycarbonate, and metal on the third protective layer The method of manufacturing an organic light emitting display device, characterized in that it further comprises the step of sealing the outer protective cap. Forming a driving unit including a plurality of transistors and one or more capacitors and having a first electrode on the transparent substrate; Forming an organic light emitting layer on the first electrode of the driving unit; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode with a silicon-based insulating material on the second electrode and planarizing an upper surface thereof; The planarization layer is used as a first passivation layer, and a second passivation layer is formed on the first passivation layer by selecting one of a silicon thin film, a silicon excess silicon nitride film, a silicon excess silicon oxide film, and a silicon excess silicon nitride film. step; Forming a third passivation layer on the second passivation layer using an insulating material based on silicon; Passing the third passivation layer with an excimer laser beam to heat-treat the second passivation layer, so that the heat-treated second passivation layer is made of a heating element layer; And heat-treating the first protective layer and the third protective layer simultaneously with the heat energy generated by the heating element layer to transform the first protective layer and the third protective layer into a high density homogeneous film.

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