KR20130050080A - Method of fabricating organic light emitting display - Google Patents

Abstract

PURPOSE: A method for manufacturing an organic light emitting display device is provided to improve the reliability of the organic light emitting display device by forming a protection layer with a thin film layer of high quality. CONSTITUTION: A first electrode is formed on a transparent substrate. An organic light emitting layer(525) is formed on the first electrode. A second electrode(519) is formed on the organic light emitting layer. A planarization layer is formed on the second electrode. A protection layer(590) is formed on the transparent substrate.

Description

Manufacturing method of organic light emitting display device {METHOD OF FABRICATING ORGANIC LIGHT EMITTING DISPLAY}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of an organic light emitting display device. In particular, a protective layer is formed of a silicon nitride film on a planarization layer, and the entire film is uniformly heat treated with a laser so as not to form an unheated region in the protective layer. The present invention relates to a method of manufacturing an organic light emitting display device capable of effectively suppressing penetration of oxygen, moisture, and the like from the outside.

Recently, with the development of information and communication technology, the demand of consumers to meet the information society has been diversified. Accordingly, the demand for flat panel display (FPD) devices such as liquid crystal display (LCD) has exploded. It is increasing.

Therefore, in the case of flat panel display devices, it is necessary to have various characteristics such as large size, small size, high resolution, low price, and thinness according to the application field. For this purpose, organic light emitting display devices in addition to the existing liquid crystal display devices The development and commercialization of new flat panel display devices such as Display (OLED) are underway.

The organic light emitting display device has not only a fast response time in its own light emitting form but also excellent brightness, simple structure, light weight and thinness, and satisfy various demands of consumers, compared to a light emitting display liquid crystal display device. It is attracting attention as the next generation flat panel display that can be made.

The above organic light emitting display device includes a transparent conductive anode layer, a hole injection layer, a hole transport layer, an organic light emitting layer, and an electron transport layer on a transparent substrate such as glass or plastic. Electron Transport Layer) and cathode layer are made by sequentially stacking.

The organic material used as the organic light emitting layer in the aforementioned organic light emitting display device is very sensitive to contamination, oxidation, and moisture caused by impurities, so that a sealed protective layer is required to protect the device.

In the case of the cathode layer, a metal having a low work function is used to reduce the effective electron injection and driving voltage, and these metals are also very sensitive to external oxygen and moisture, so that the cathode layer is exposed to the outside air. When exposed, not only the light emission characteristics such as light emission luminance and light emission uniformity of the device are significantly reduced by oxidation of the metal constituting the cathode layer, but also the life of the organic light emitting display device is shortened.

In addition, when there are defects such as pin holes or cracks on the bonding surface of the glass substrate and the metal cap, oxygen or moisture is introduced into the organic light emitting layer through the holes or cracks to deteriorate the organic light emitting layer. Degradation can drastically reduce the lifetime of the device.

Therefore, in order to secure reliability of the organic light emitting display device, the device unit including the organic light emitting layer must be completely blocked from external air to prevent deterioration due to penetration of oxygen or moisture.

Hereinafter, a manufacturing method of blocking an organic light emitting layer from the outside when manufacturing an organic light emitting display device according to the related art will be described in detail with reference to the accompanying drawings.

1 is a process cross-sectional view of an organic light emitting display device according to the prior art.

In the conventional first technology, the positive electrode layer 12 composed of ITO or the like is laminated on the transparent substrate 11 at a predetermined thickness by using a sputtering method, and techniques such as photolithography and etching are performed. To form the first electrode 12.

The organic insulating layer is entirely stacked on the transparent substrate 11 including the first electrode 12 with a positive type organic photosensitive material to a predetermined thickness, and the organic insulating layer is formed using a technique such as photolithography. The layer pattern 13 is formed.

In addition, the organic photosensitive material having a negative type is entirely stacked on the organic insulating layer pattern 13, and a barrier rib having a negative profile having an overhang structure using photolithography or the like ( 14).

The transparent substrate 11 including the first electrode 12, the organic insulating layer pattern 13, and the partition 14 is moved into a vacuum deposition apparatus, and a hole is formed on the first electrode 12. The injection layer 15, the hole transport layer 16, the organic light emitting layer 17, and the electron transport layer 18 are sequentially formed.

Herein, as the material of the organic light emitting layer 17, US Patent No. Fluorescent Emitting Materials such as Aluminum Tris (8-Hydroxyquinoline) Alq ₃ and Perylene, which are the low molecular materials mentioned in 4,769,292 and 5,294,870. US Patent No. 2, 3, 7, 8, 12, 17, 18-octamethyl-21H, 23H-poppinplatinum (Platinum 2, 3, 7, 8, 12, 17, 18-Octaethyl- Phosphorescent Emitting Materials such as 21H, 23H-Porphine Platinum (PtOEP), Iridium Complex (Ex: Ir (PPy) ₃ ), and the like are used. In the case of the phosphorescent organic light emitting display device, Basocuproine (BCP), Carbazole Biphenyl (CBP), N, N'- between the hole transport layer 16 and the electron transport layer 18. Form a blocking layer with organic materials such as diphenyl-N, N'-bis-alpha-naphthylbenzylidene (N, N'-Diphenyl-N, N'-Bis-alpha-Napthylbenzidine (NPD)) .

The hole injection layer 15, the hole transport layer 16, and the electron transport layer 18 serve as an auxiliary function of increasing the luminous efficiency of the organic light emitting display device.

In addition, the organic light emitting display device formed of a polymer organic material has a two-layer structure consisting of a hole transport layer and an organic light emitting layer between the anode layer and the cathode layer, the material used in the device is U.S. Patent No. Poly (Phenylvinylene) Derivative (PPV), a polythiophene, polyethylhexyloxyvinylene Conductive polymers such as Poly (2,5-dialkoxyphenylenevinylene) and PDMeOPV) are used.

The second electrode 19 is sequentially formed by sequentially laminating the negative electrode layer 19 to a predetermined thickness by using a method such as thermal evaporation using Al, which is a metal having good electrical conductivity.

In addition, an organic binder 22 is installed in an encapsulation area on the transparent substrate 11 including the second electrode 19, and a metal cap including a dehumidifier 20 is disposed on the front surface thereof. 21) is bonded to block the organic light emitting display device from the outside.

In the organic light emitting display device, when the voltage is applied between the first electrode 12 and the second electrode 19, the hole injection layer 15 and the hole transport layer 16 are discharged from the first electrode 12. Holes are injected into the organic light emitting layer 17 through the electrons, and electrons are injected into the organic light emitting layer 17 from the second electrode 19 through the electron transport layer 18 to recombine the electrons and the holes, After being excited, it falls to the ground and emits light.

In the method of manufacturing an organic light emitting display device using the first conventional technique, the metal cap 21 including the dehumidifying agent 20 is separated from the surface of the second electrode 19 so that the metal cap 21 is separated. If the adhesive is not completely encapsulated, the organic light emitting layer 17 and the second electrode 19 may be deteriorated by contact with moisture, oxygen, or the like penetrated from the outside.

In addition, the process of adhering the dehumidifying agent 20 and the metal cap 21 on the organic light emitting display device is complicated, and when manufacturing a medium-large organic light emitting display device, the surface processing accuracy of the junction portion of the metal cap 21 is reduced. Since it is not completely sealed, moisture and oxygen easily penetrate from the outside, thereby deteriorating the organic light emitting display device.

FIG. 2 is a process cross-sectional view of an active matrix organic light emitting display device (AMOLED) according to the related art.

The organic light emitting display device is classified into an active type and a passive type according to a driving method, and passive matrix organic light emitting display (PMOLED) is consumed as the size of the panel increases. Due to problems such as low power efficiency and low device reliability, active organic materials using a polycrystalline silicon thin film transistor (poly-Si TFT) or a single crystal silicon transistor as a pixel driving device in the case of medium and large panels Electroluminescent display devices are used.

Referring to FIG. 2, a method of manufacturing an active matrix organic light emitting display device (AMMOLED) will be described in detail as follows.

In the conventional second technology, the backplane 240 is formed on the transparent substrate 211 having a driving unit 230 including a plurality of transistors using amorphous silicon or polycrystalline silicon as an active layer and one or more capacitors.

An inorganic insulating material 231 such as a silicon oxide film or a silicon nitride film is stacked in the backplane 240 to form a contact hole in a portion corresponding to the drain region of the driving transistor, and form an ITO electrode layer 212 in the contact hole region. .

After stacking an organic insulating material 232 such as polyimide (PI) on the backplane 240, a predetermined region of the ITO electrode layer 212 is exposed to form a display unit of the organic light emitting display device.

Then, the backplane 240 having a predetermined region of the ITO electrode layer 212 exposed is moved into the vacuum deposition apparatus, and the hole injection layer 215 is disposed on the display unit of the organic light emitting display device by using a shadow mask. The hole transport layer 216, the organic light emitting layer 217, and the electron transport layer 218 are sequentially formed. As the material of the organic light emitting layer 217 used here, a material or the like used in the first conventional technique is used.

The negative electrode layer 219 of the organic light emitting display device is formed by successively stacking metals having good electrical conductivity, such as Al, Li / Al, MgAg, Ca, and the like, by using a thermal deposition method, an electron beam method, and sputtering. .

In the organic light emitting display device as described above, a current is injected into the organic light emitting display device through the ITO electrode 212 formed on the backplane 240. When a voltage is applied between the ITO electrode 212 and the negative electrode layer 219 of the organic light emitting diode display device, holes are injected from the TFT through the hole injection layer 215 and the hole transport layer 216. Electrons are injected from the layer 219 through the electron transport layer 218 to be recombined in the organic light emitting layer 217, and after the electrons are excited, fall to the bottom to emit light.

Since the organic light emitting layer 217 is vulnerable to moisture and oxygen, the first protective layer 249 is formed by stacking a silicon nitride film, an organic material, or the like on the entire surface including the negative electrode layer 219 of the organic light emitting display device. To form the first substrate 250.

In addition, a frit glass may be formed in a predetermined encapsulation area on one surface of an organic light emitting display device on the first substrate 250 or on one surface of a second substrate 260 made of glass facing the surface. 251).

In order to encapsulate the organic light emitting display device, one surface of the first substrate 250 on which the frit glass 251 is installed and one surface of the second substrate 260 are bonded to each other, and then, The encapsulation process is completed by irradiating an IR laser to the encapsulation area through one surface of the first substrate 250 or the second substrate 260.

In the conventional method of manufacturing the organic light emitting display device according to the second technology, since the glass is used as the material of the first substrate 250 and the second substrate 260, the surface processing uniformity of the junction is good, and the glass is used as the adhesive material. In use, the penetration of moisture and oxygen from the outside can be effectively prevented.

However, in the case of the conventional second technology, the structure is very weak against stress and external impact generated when the glass material is melt-bonded by using a laser, so that the reliability and yield are deteriorated when the organic light emitting display device is manufactured. There is.

3 is a cross-sectional view of a conventional organic light emitting display device according to a third technology.

In the conventional third technology, a backplane 340 is formed on the transparent substrate 311 having a driver 330 including a plurality of transistors using amorphous silicon or polycrystalline silicon as an active layer and one or more capacitors.

An inorganic insulating material 331 such as a silicon oxide film or a silicon nitride film is stacked in the backplane 340 to form a contact hole in a portion corresponding to the drain region of the driving transistor, and form an ITO electrode layer 312 in the contact hole region. do.

After stacking an organic insulating material 332 such as polyimide (PI) on the backplane 340, a predetermined region of the ITO electrode layer 312 is exposed to form a display unit of the organic light emitting display device.

The hole injection layer 315, the hole transport layer 316, the organic light emitting layer 317, the electron transport layer 318, and the negative electrode layer 319 are sequentially formed on the display unit of the organic light emitting display device.

In order to protect the organic light emitting layer 317 from penetration of external moisture and oxygen, the first substrate is formed by stacking a silicon nitride film having a predetermined thickness by PECVD or the like to form a first protective layer 349. Complete 350.

In addition, one surface of an organic sheet 361 having a predetermined thickness having an adhesive material attached to both surfaces is attached to a separate second substrate 360 using a laminating technique. Here, glass, plastic, metal plate or the like is used as the material of the second substrate 360.

The first substrate 350 and the second substrate 360 are disposed so that the organic sheet 361 is disposed between the first substrate 350 and the second substrate 360 to encapsulate the organic light emitting display device. Is bonded to complete the encapsulation process.

The conventional method of manufacturing the organic light emitting display device according to the third technology has a structure that is strong in external impact or stress, but there is a problem that the encapsulation process is complicated, and the first protective layer 349 and the organic sheet 361 are If foreign matters such as dust or defects generated during the process are interposed therebetween, there is a problem that the penetration of moisture and oxygen from the outside cannot be effectively prevented.

In addition, when the organic sheet 361 is disposed on the second substrate 360, when defects such as foreign matter or bubbles are interposed between the second substrate 360 and the organic sheet 361, reliability of the device may be caused. And manufacturing yields deteriorate.

4 is a cross-sectional view of an organic light emitting display device according to a fourth technique.

In the fourth technology, a material such as indium tin oxide (ITO), indium zinc compound (IXO), zinc oxide (TO), tin, gold, platinum, or the like is deposited on a transparent substrate 411 such as glass, quartz, or transparent plastic. To form an anode layer 412.

The hole injection layer 415, the hole transport layer 416, the organic light emitting layer 417, the electron transport layer 418, and the negative electrode layer 419 are sequentially formed on the anode layer 312.

In order to prevent the organic light emitting layer 417 and the cathode layer 419 and the like from deteriorating due to the penetration of external oxygen and moisture on the transparent substrate 411 including the negative electrode layer 419. The protective layer 470 is formed by stacking a silicon-based insulating material having an initial thin film thickness (d ₁ ) of about 50,000 Å.

The protective layer 470 may be a silicon oxide film (SiO ₂ ), a silicon nitride oxide film (SiO _x N _y ), or a silicon nitride film (Si ₃ N ₄ or SiN _x ) by chemical vapor deposition, sputtering, vacuum deposition, or electron beam. It is formed from a single layer film or two or more thin films selected from among them.

In this case, when the protective layer 470 is formed of a silicon-based insulating material using a chemical vapor deposition method, SiN _x is a reaction gas together with an inert gas as SiH ₄ , NH ₃ , in a temperature range of 25 ° C. to 300 ° C. N _2, gas is used, SiON uses SiH ₄ , N ₂ O, NH ₃ , N ₂ gas as the reaction gas with inert gas, and SiO ₂ is SiH ₄ and O ₂ gas as the reaction gas with inert gas. The process is carried out using each.

In this case, when the protective layer 470 is formed of the silicon-based insulating materials using a sputtering method, SiN _x , SiON, and SiO ₂ are SiN _x , SiON, and SiO ₂ in a temperature range of 25 ° C. to 300 ° C., respectively. The process is carried out using the target.

In addition, only a portion d ₂ of the surface layer is locally heat-treated at an initial thin film thickness d ₁ using an excimer laser to remove defects present in the protective layer 470.

The excimer laser used for the heat treatment of the protective layer 470 may include Ar ₂ (wavelength = 126 nm), Kr ₂ (wavelength = 146 nm), F ₂ (wavelength = 157 nm), and Xe ₂ (wavelength = 172 nm). , ArF (wavelength = 193 nm), KrF (wavelength = 248 nm), XeCl (wavelength = 308 nm), XeF (wavelength = 351 nm) excimer laser, and the thickness of the locally heat-treated portion ( d ₂ ) is formed to be 10 ~ 10,000Å.

When the excimer laser is irradiated onto the surface of the protective layer 470, only an extremely thin surface layer d _{1 in} which the laser light is absorbed is formed inside the protective layer 470. The result is formed in the protective layer 470 is double-layer structure in which the first thin film region having a thickness d ₂ that is not the thin film layer is the area of the heat-treated and heat-treated high-quality film quality improvement does not having a thickness d ₁ in a row.

Although not shown in FIG. 4, calcium oxide (CaO), between the cathode layer 419 and the passivation layer 470, is prevented in order to prevent deterioration due to gas-emitting materials generated in the organic light emitting display device. The dehumidifier layer may be formed to a thickness of about 100 kPa to 50,000 kPa using materials such as yttrium oxide film (Y ₂ O ₃ ) and magnesium oxide (MgO).

The glass, AS resin, ABS resin, polypropylene (PP), polystyrene (HIPS), polymethyl methacrylate (PMMA), polycarbonate, metal, etc. to cover the structure described above on the transparent substrate 411. Adhesive sealing of the outer protective cap made may reinforce the mechanical strength of the protective layer 470.

As described above, according to the fourth technology, since the silicon-based insulating materials are used as the encapsulating material in the form of a thin film, a light-weight thin organic light emitting display device may be manufactured, and the surface layer d ₂ of the protective layer 470 may be manufactured. It is possible to form a high-quality protective film heat-treated at a high temperature on a portion can effectively protect the organic light emitting layer 417.

However, since the conventional fourth technique as described above only heats the surface layer d ₂ when forming the protective layer 470, an area not formed by the difference between the thickness d ₁ and d ₂ is formed. When stacking the first silicon nitride film using a method such as sputtering, there is a problem in that productivity increases due to an increase in processing time, and in addition, the performance and reliability of the device are inferior due to a number of internal defects existing in an unheated region. there is a problem.

In the excimer laser heat treatment, there is a problem in that adhesion and mechanical strength of the protective layer 470 deteriorate due to stress generated between the d ₁ and the d ₂ .

In addition, the above-described fourth conventional technology is a silicon oxide film (SiO ₂ , energy gap = 9.0 eV), a silicon nitride oxide film (SiO _x N _y ) or a silicon nitride film (Si ₃ N ₄ or SiN _x , energy gap = 5.0 eV. When the protective layer 470 is formed of a single layer film or two or more composite layers selected from ˜6.0 eV), the silicon oxide film and the silicon nitride oxide film may be formed of Ar ₂ (wavelength = 126 nm, photon energy = 9.8 eV) and Kr _2. (Wavelength = 146 nm, photon energy = 8.5 eV), F ₂ (wavelength = 157 nm, photon energy = 7.9 eV), Xe ₂ (wavelength = 172 nm, photon energy = 7.2 eV), ArF (wavelength = 193 nm, When the heat treatment process is performed using one of excimer lasers such as photon energy = 6.4 eV), KrF (wavelength = 248 nm, photon energy = 5.0 eV), and XeCl (wavelength = 308 nm, photon energy = 4.0 eV), Since the light is not sufficiently absorbed into the film and the heat treatment is not sufficient, the purpose of the fourth technique described above is There is a problem that can not generate. Here, the energy gap of the silicon nitride oxide film (SiO _x N _y ) has a value between the silicon nitride film and the silicon oxide film, depending on the oxygen content.

In addition, in the case of the aforementioned KrF and XeCl excimer lasers, since the photon energy is smaller than the energy gap of the silicon-based insulating materials, the fourth fourth technique is not sufficiently heat treated even when irradiating the lasers. There is a problem that can not achieve the purpose.

Accordingly, the present invention is to solve the problem of the manufacturing method of the organic light emitting display device of the prior art as described above, the excimer laser to the entire protective layer of the organic light emitting display device composed of a silicon nitride film laminated on the planarization layer. Heat-treatment, and the entire protective layer is transformed into a high-density homogeneous film so as not to form unnecessary regions inside the protective layer, thereby effectively blocking the penetration of oxygen and moisture from the outside, An object of the present invention is to provide a method of manufacturing an organic light emitting display device that improves reliability and productivity.

The object of the present invention as described above is achieved by the following configuration.

(1) A method of manufacturing an organic light emitting display device according to the present invention includes forming a first electrode on a transparent substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode and planarizing an upper surface thereof on the second electrode; Forming a protective layer composed of a silicon nitride film on the transparent substrate including the second electrode and the planarization layer, and using the excimer laser to prevent an unheated region from being formed in the protective layer. And heat-treating the entire silicon nitride film to form a high density homogeneous film.

(2) In the method of manufacturing an organic light emitting display device as in 1), the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer. And using the second electrode as an anode layer.

(3) A method of manufacturing an organic light emitting display device as in 1), comprising: forming an ITO layer with the first electrode; Forming an insulating film having a plurality of openings exposing the ITO layer; A plurality of partitions are formed on the insulating film orthogonal to the ITO layer.

(4) A method of manufacturing an organic light emitting display device as described in (1) above, wherein an auxiliary electrode layer is formed on the first electrode or below the first electrode.

(5) The method of manufacturing an organic light emitting display device as described in 1) above, wherein the organic light emitting layer comprises a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer.

(6) The method of manufacturing an organic light emitting display device as described in 1) above, wherein the planarization layer is formed of an organic material or an inorganic material.

(7) The method of manufacturing an organic light emitting display device as described in (1) above, wherein the silicon nitride film does not contain hydrogen in the film.

(8) The method of manufacturing an organic light emitting display device as described in 1) above, wherein the silicon nitride film is formed to a thickness of 1,500 GPa or less.

(9) The method of manufacturing an organic light emitting display device as described in 1) above, wherein the silicon nitride film is heat treated using an excimer laser.

(10) In the method of manufacturing an organic light emitting display device as in 9, wherein the excimer laser is Ar ₂ (wavelength = 126 nm), Kr ₂ (wavelength = 146 nm), F ₂ (wavelength = 157 nm), Xe ₂ (wavelength = 172 nm) and ArF (wavelength = 193 nm) excimer laser is selected and heat-treated.

(11) The method of manufacturing an organic light emitting display device as described in 1) above, wherein the protective layer further comprises forming the heat treated silicon nitride film layer as two or more composite layers.

(12) The method of manufacturing an organic light emitting display device as described in (1), wherein the protective layer further comprises forming a silicon nitride film and an aluminum oxide as two or more composite layers.

(13) The method of manufacturing an organic light emitting display device as in 1), further comprising the step of adhesively encapsulating an outer protective cap on the protective layer.

(14) A method of manufacturing an organic light emitting display device according to the present invention comprises the steps of: forming a driving unit comprising a plurality of transistors and at least one capacitor and having a first electrode on a transparent substrate; Forming an organic light emitting layer on the first electrode of the driving unit; Forming a second electrode on the organic light emitting layer; Forming a planarization layer covering the second electrode and planarizing an upper surface thereof on the second electrode; Forming a protective layer composed of a silicon nitride film on the transparent substrate including the second electrode and the planarization layer, and using the excimer laser to prevent an unheated region from being formed in the protective layer. And heat-treating the entire silicon nitride film to form a high density homogeneous film.

(15) The method of manufacturing an organic light emitting display device as described in (14) above, wherein the driving part formed on the transparent substrate is composed of a driving transistor, a switching transistor, and a capacitor.

(16) The method of manufacturing the organic light emitting display device as described in (14), wherein the forming of the driving unit includes forming an insulating layer and a capacitance layer on the insulating layer on the transparent substrate; Forming a gate insulating film on the insulating film and the active layer; Forming a gate electrode on the insulating layer corresponding to the active layer; Forming a source and a drain electrode on the active layer; Forming a second insulating film on the transparent substrate including the gate insulating film and the gate electrode; Selectively etching the second insulating layer and the gate insulating layer corresponding to the source and the drain to form a contact hole; Forming a first electrode layer in a contact hole corresponding to a drain and a bus electrode in a contact hole corresponding to a source of the driving transistor; And forming a storage electrode connected to the capacitor on a signal line, the gate electrode of the driving transistor, and the drain of the switching transistor on a bus electrode of the switching transistor source.

(17) A method of manufacturing an organic light emitting display device as described in 14), wherein the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer. And using the second electrode as an anode layer.

(18) The method of manufacturing an organic light emitting display device as described in (14) above, wherein the organic light emitting layer includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer.

(19) The method of manufacturing an organic light emitting display device as described in (14), wherein the planarization layer is formed of an organic material or an inorganic material.

(20) The method of manufacturing an organic light emitting display device as described in (14) above, wherein the silicon nitride film does not contain hydrogen in the film.

(21) The method of manufacturing an organic light emitting display device as described in (14) above, wherein the silicon nitride film is formed to a thickness of 1,500 GPa or less.

(22) The method of manufacturing an organic light emitting display device as described in (14) above, wherein the silicon nitride film is heat treated using an excimer laser.

(23) In the method of manufacturing an organic light emitting display device as in (22), the excimer laser includes Ar ₂ (wavelength = 126 nm), Kr ₂ (wavelength = 146 nm), F ₂ (wavelength = 157 nm), and Xe. ₂ (wavelength = 172 nm) and ArF (wavelength = 193 nm) excimer laser is selected and used.

(24) The method of manufacturing an organic light emitting display device as described in (14), wherein the protective layer further comprises forming the heat treated silicon nitride film layer as two or more composite layers.

(25) The method of manufacturing an organic light emitting display device as described in (14), wherein the protective layer further comprises forming a silicon nitride film and an aluminum oxide as two or more composite layers.

(26) The method of manufacturing an organic light emitting display device as described in 14), further comprising the step of adhesively encapsulating an outer protective cap on the protective layer.

Such a method of manufacturing an organic light emitting display device according to the present invention has the following effects.

According to the present invention, a protective layer made of a silicon nitride film (Si ₃ N ₄ or SiN _x ) is laminated on the planarization layer to a thickness such that an area not subjected to heat treatment is not formed inside the protective layer without affecting other elements of the device, Heat treatment the entire thickness of the protective layer with an excimer laser to form a homogeneous film that minimizes internal defects caused by dangling bonds and porosity caused by incomplete bonding of silicon and nitrogen in the protective layer. In addition, the organic light emitting layer, the cathode layer, and the like can be effectively prevented from being deteriorated by suppressing penetration of oxygen and moisture from the outside.

In addition, the above-described prior art has a large number of internal defects included in the initial thin film layer region because a thick initial thin film layer region is formed at the same time adjacent to the inner layer of the protective layer at a very short time by a local heat treatment. As a result, the reliability of the device is deteriorated and the adhesion and mechanical strength of the protective layer are deteriorated due to the stress generated during the heat treatment. However, in the present invention, the reliability of the device is formed because only a high quality thin film layer is formed on the planarization layer. And mechanical strength can be improved.

In addition, the prior art requires a considerably long film forming time of up to 1 to 2 hours because of the deposition of a thick film of up to 50,000 kW to locally heat only an extremely thin surface layer of a protective layer composed of a silicon nitride film. Since the thin film is laminated to the maximum thickness of 1,500 Å or less, which is the maximum absorption, it takes only a few minutes to form the film, which can drastically reduce the process time and manufacturing cost for manufacturing the organic light emitting display device. In addition, in the prior art, it is also possible to effectively solve the problem of poor transmittance generated when displaying a display through a thick protective layer.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

5 to 6 are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention.

5 is a cross-sectional view illustrating a passive organic light emitting display device according to a first embodiment of the present invention.

In the first embodiment of the present invention, the positive electrode layer 512 made of ITO or the like is laminated on the transparent substrate 511 such as transparent glass or plastic substrate with a thickness of 50 kV to 3,000 kPa using a sputtering method. The first electrode 512 is formed using a technique such as photolithography and etching.

Herein, the sheet resistance of the positive electrode layer 512 is set to 15 Ω / □ or less, and the visible light transmittance is preferably close to 100%, but it can be used if it is 10% or more.

Herein, the positive electrode layer 512 uses a metal having a work function of 4.0 eV or more, an alloy, a compound having electrical conductivity, or a mixture thereof. Tin oxide (ITO), indium zinc compound (IXO), zinc oxide (TO), tin , Gold, platinum, palladium and the like are formed from a single layer or a plurality of layers, or a mixture thereof.

In addition, chromium (Cr), tungsten (W), molybdenum (Mo), molybdenum tungsten (MoW), aluminum (Al) by sputtering before the positive electrode layer 512 is laminated in order to lower the resistance of the ITO positive electrode layer 512. ), And an auxiliary electrode (not shown) below the positive electrode layer 512 of the pad portion outside the display portion using a technique such as photolithography and etching. May be formed. Alternatively, the positive electrode layer 512 may be first formed on the transparent substrate 511, and the auxiliary electrode (not shown) may be formed on the positive electrode layer 512 of the pad portion outside the display unit.

In addition, a polyimide, acrylic, novolak, and epoxy system may be electrically insulated on the transparent substrate 511 including the first electrode 512. A positive type organic photosensitive material composed of, for example, an organic insulating layer is entirely stacked to a thickness of 500 kPa to 10,000 kPa, and the organic insulating layer pattern 513 is formed using a technique such as photolithography.

Here, instead of the organic insulating layer pattern 513, an inorganic insulating layer such as a silicon oxide film, a silicon nitride film, etc. may be entirely stacked to a predetermined thickness, and then an inorganic insulating layer pattern may be formed by using photolithography and etching techniques. have.

Then, an electrically insulating negative type organic photosensitive material is entirely stacked on the organic insulating layer pattern 513 and overhanged on the insulating layer orthogonal to the first electrode layer 512 using a technique such as photolithography. A plurality of partitions 514 having a reverse slope of the structure are formed.

The transparent substrate 511 including the first electrode 512, the organic insulating layer pattern 513, and the partition wall 514 is moved into a vacuum deposition apparatus, and a shadow mask is used to form the first electrode ( The organic light emitting layer 525 is formed by sequentially stacking the hole injection layer 515, the hole transport layer 516, the organic light emitting layer 517, and the electron transport layer 518 on the 512.

Here, when the organic light emitting layer 525 is laminated using a low molecular weight organic material, the hole injection layer 515 is about 10 kPa to about 1,000 kPa depending on the material, and the hole transport layer 516 is 10 depending on the material. The organic light emitting layer 517 has a thickness of about 5 kPa to about 800 kPa, and the electron transport layer 518 is about 2 kPa to about 500 kPa depending on the material.

Here, in the case of the organic light emitting display device formed of the organic material of the polymer form, instead of the low molecular organic material, a buffer layer such as PEDOT and PSS and polyphenylvinylene derivative (PPV) The organic laminated structure composed of an organic light emitting layer, such as, etc., is formed using a method such as spin coating, dipping, thermal vacuum evaporation. At this time, the buffer layer is formed to a thickness of 50 ~ 1,500 Å, the organic light emitting layer of about 100 Å ~ 1,000 Å.

The negative electrode layer 519 is formed on the electron transport layer 518 by a single layer, a plurality of layers, or a mixture of aluminum, indium, magnesium, lithium, gold, sodium, or silver, which are metals having good electrical conductivity. The second electrode 519 is formed by laminating in a thickness of about 10 kPa to about 10,000 kPa using a deposition method, an electron beam method, a sputtering method, or the like.

In addition, lithium fluoride (LiF), lithium oxide (Li ₂ O), cesium fluoride (CsF), lithium-aluminum alloy for the purpose of increasing the electron injection efficiency between the cathode layer 519 and the electron transport layer 518. One of (Li: Al Alloy) may be formed to a thickness of about 1 Å to 150 Å.

In the present invention, a planarization layer 580 is formed to cover the second electrode 519 and planarize an upper surface thereof in order to uniformly heat-process the entire protective layer 590 to be described later.

Here, the planarization layer 580 is deposited with a low molecular weight organic material such as Alq ₃ to a thickness of about 500 ~ 70,000 하여 by thermal vacuum deposition method, and connects the external driving circuit and the panel by using a shadow mask during deposition. In order to prevent the organic material from being laminated on the pad portion.

Here, the planarization layer 580 may be formed by stacking a polymer-type organic material by spin coating, dipping, printing, or by depositing an inorganic material such as silicon oxide or silicon nitride by CVD or sputtering. It may be formed.

In addition, in order to suppress deterioration of the organic light emitting layer 517 and the second electrode 519 due to penetration of oxygen, moisture, etc. from the outside, the transparent including the second electrode 519 and the planarization layer 580 On the substrate 511, a protective layer 590 is formed by completely stacking a silicon nitride film (Si ₃ N ₄ or SiN _x ) having a thickness of about 1,500 GPa or less according to the Exponential Law of Absorption, which will be described later. To form. A sputtering method, a chemical vapor deposition method, and the like are used for laminating the silicon nitride film.

In the case where the silicon nitride film is formed using the sputtering method, the film forming temperature of about 23 ° C. to 200 ° C., the RF power of about 10 W to 3,000 W, the Ar gas flow rate of about 5 sccm to 1,000 sccm, and the flow rate of 0 sccm to 1,000 The process is performed using a Si target or a Si ₃ N ₄ target at a sccm N2 gas flow rate and a pressure of 1 mTorr to 100 mTorr.

In this case, when the silicon nitride film is formed by chemical vapor deposition, an inert gas is used as a carrier gas at a film forming temperature of about 23 ° C. to 200 ° C., and SiH ₄ , NH ₃ , N _2, or the like is used as a reaction gas. Carry out the process. However, since the silicon nitride film laminated using the chemical vapor deposition method contains a large amount of hydrogen in the film, a film breakage phenomenon due to hydrogen ejection occurs during excimer laser heat treatment described later. Therefore, in the present invention, the hydrogen is removed from the film by performing a dehydrogenation process at an energy density of about 30 mJ / cm 2 to 500 mJ / cm 2 with an excimer laser.

The silicon nitride film exhibits an absorption coefficient of about 2 × 10 ⁵ cm ⁻¹ to 5 × 10 ⁵ cm ⁻¹ at an wavelength of 193 nm of the ArF excimer laser, depending on the film formation conditions, and thus I _χ = I _ο × Thin films that absorb light using the Exponential Law of Absorption, expressed as e ^-αt (where I _χ = transmitted light intensity, I _ο = incident light intensity, α = absorption coefficient, t = thin film thickness) The thickness of can be calculated.

When the ArF excimer laser is irradiated onto the protective layer 590, the absorption coefficient of the silicon nitride film is 2 × 10 ⁵ cm ⁻¹ and absorption of up to 95% (I _χ / I _ο = 0.05) is achieved. If so, light is absorbed to a depth of about 1,500 Hz at the surface of the silicon nitride film. Therefore, in the excimer laser heat treatment to be described later, the silicon nitride film should be laminated to a thickness of about 1,500 kPa or less so as not to form an unheated region in the protective layer 590.

Since the protective layer 590 is not formed by a thermal growth method at a high temperature but is formed at a low temperature by a sputtering method, a plurality of dangling bonds and porosities generated by incomplete bonding of silicon and nitrogen in a film are formed. Since it contains internal defects, etc., oxygen and moisture are easily permeated, the film quality must be improved through heat treatment.

In order to remove defects in the protective layer 590, an actual heat treatment temperature of about 700 ° C to 1,100 ° C is required, but this temperature is fatal to other components including the organic light emitting layer 517 of the organic light emitting display device. In order to solve the above problems, the present invention solves the above problem by performing a heat treatment process using an excimer laser, which will be described later.

And select one of Ar ₂ (wavelength = 126 nm), Kr ₂ (wavelength = 146 nm), F ₂ (wavelength = 157 nm), Xe ₂ (wavelength = 172 nm), ArF (wavelength = 193 nm) excimer laser. Thus, heat treatment is performed at an energy density of about 50 mJ / cm 2 to 3,000 mJ / cm 2 so that an area that is not subjected to heat treatment is not formed in the protective layer 590, and the entire protective layer 590 is formed of a high quality thin film. Reform.

Here, the excimer lasers do not transmit damage due to heat, light, etc. to the lower portion of the protective layer 590, and heat-treat in a very short time (about 5 × 10 ^-8 seconds) with high power light energy. Since the process can be completed, the entire protective layer 590 may be uniformly heat treated at a high temperature near 1,000 ° C. even at a low temperature.

In addition, in the case of a single layer film, when defects such as pinholes or fine cracks occurring on the surface of the thin film occur, a silicon nitride film containing no hydrogen is sequentially sequentially stacked on the silicon nitride film heat-treated in the same manner as above. In the same manner, the protective layer 690 may be formed of a silicon nitride film of two or more composite layers by performing one or more batch processes of laser heat treatment.

In addition, the protective layer 690 may be formed of at least two composite layers of the heat-treated silicon nitride film and aluminum oxide such as Al ₂ O ₃ having a thickness of about 30 to 1,500 kPa.

In addition, an external protective cap made of glass, plastics, metal, or the like may be adhesively sealed to cover the above-described structure on the transparent substrate 511 to reinforce the mechanical strength of the protective layer 590.

In the first exemplary embodiment of the present invention, the cathode layer 519 may be formed on the transparent substrate 511 instead of the anode layer 512, and the anode layer 512 may be formed later.

In the passive organic light emitting display device according to the first exemplary embodiment of the present invention, when a voltage is applied to the first electrode 512 and the second electrode 519, the hole transport layer 516 exists between the two electrodes. As the injected holes and the electrons injected through the electron transport layer 518 meet and recombine in the organic light emitting layer 517, the electrons are excited and fall to the ground state to emit light.

Hereinafter, a method of manufacturing an active organic light emitting display device according to a second embodiment of the present invention will be described.

6 is a cross-sectional view of an active organic light emitting display device including a driving transistor, a switching transistor, and a capacitor according to a second embodiment of the present invention.

The active organic light emitting display device is based on a switching thin film transistor, a driving thin film transistor, and a data storage capacitance in each pixel to independently drive each pixel. Circuits are formed, and the number and arrangement of transistors and capacitances vary depending on the construction method. The switching thin film transistor serves as a switch for writing the driving voltage applied through the data line to the gate terminal of the driving thin film transistor, and the driving thin film transistor injects current into the organic light emitting display device to drive the OLED. . In addition, the storage capacitance maintains the voltage of the driving thin film transistor gate terminal for one frame.

Fabrication of such an active organic light emitting display device includes manufacturing a backplane 640 having a Poly-Si TFT described below on a transparent glass substrate 611 and mounting an organic light emitting display device thereon. . In addition, as a substrate of the backplane 640 to be described later, a flexible substrate, a metal substrate, a quartz substrate, and a silicon substrate may be used. In addition to poly-Si, an oxide semiconductor of Zn-0 series such as amorphous silicon, IGZO (InGaZnO), or the like may be used. Can be mounted as the active layer to fabricate a backplane 640 described later.

In the second embodiment of the present invention, an inorganic material such as a silicon oxide film, a silicon nitride film, or the like is fabricated by using a sputtering method and a CVD method such as thermal CVD, PECVD, and APCVD on the transparent substrate 611 to fabricate an active organic light emitting display device. A buffer layer 641 is formed by entirely stacking an insulating layer in a thickness of about 1,000 Å to 5,000 Å.

After laminating amorphous silicon having a thickness of about 100 to about 1,500 mm by PECVD or sputtering on the buffer layer 641, a poly-Si thin film is formed by a laser heat treatment method, such as photolithography and etching. The technique is used to form an island-shaped active layer 642.

In order to prevent film damage of the active layer 642 due to hydrogen emission generated during laser heat treatment, the hydrogen content in the amorphous silicon film is about 5% or less at a temperature of about 200 ° C. to 450 ° C. before proceeding with the excimer laser heat treatment process. Carry out the dehydrogenation process for 30 minutes to 1 hour.

Here, excimer lasers such as KrF (wavelength = 248 nm), ArF (wavelength = 193 nm), and XeCl (wavelength = 308 nm) were used to form the Poly-Si thin film, and 50 mJ / The heat treatment step is performed at an energy density of about 2 cm 2 to 1,500 mJ / cm 2.

A predetermined amount of ions, such as boron or phosphorus, are implanted into a portion to form a storage capacitance layer (not shown) by using a photolithography technique using an ion implanter.

In order to activate the implanted ions, a heat treatment process is performed at an energy density of 50 mJ / cm 2 to 500 mJ / cm 2 at a temperature of 23 ° C. to 400 ° C. using an excimer laser such as KrF, ArF, and XeCl.

The gate insulating layer layer 643 is formed by stacking a silicon oxide film or a silicon nitride film having a thickness of about 1,000 GPa to 5,000 GPa on the buffer layer 641 and the active layer 642 by using a PECVD method.

The chromium (Cr), tungsten (W), molybdenum (Mo), and molybdenum tungsten (Mo-W) are formed on the gate insulating layer 643 corresponding to the active layer 642 by sputtering or chemical vapor deposition. ), One of metals such as aluminum (Al), aluminum alloy, Cu, Ag, Au, and the like, and the entire thickness of 1,000 ～ to 5,000 Å, and the active layer 642 using photolithography and etching techniques. The gate electrode 644 is formed on the gate insulating layer 643 corresponding to the gate insulating layer 643.

In the case of configuring the backplane 640 to be described later using an N-channel transistor, predetermined phosphorus ions are implanted into the formation region of the first contact hole 6645, which will be described later, on the active layer 642 using an ion implanter. Implantation to form N ⁺ region 6421.

Although not illustrated in FIG. 5, when a backplane 640 is described below using a P-channel transistor, a predetermined boron ion is implanted onto the active layer 642 using an ion implanter to form a P ⁺ region.

In order to improve the short channel effect of the TFT due to the hot carrier, in the case of the N channel, an N ⁻ region 6422 is provided adjacent to the channel of the N ⁺ region 6421. By doing so, it is possible to form a lightly doped drain layer (LDD) structure. In the case of the P channel, an LDD structure may be formed by providing a P ⁻ region adjacent to a channel of the P ⁺ region.

Here, the N ⁻ region 6422 is formed by implanting a smaller amount of ions than when forming the N ⁺ 6421 region, and heat-treated with an excimer laser to activate the implanted ions. In the case of the P channel, a smaller amount of ions are implanted than the P ⁺ region is formed to form the P ⁻ region and heat treated with an excimer laser to activate the implanted ions.

The second insulating film is formed on the transparent substrate 611 including the gate insulating film 643 and the gate electrode 644 by using a silicon oxide film or a silicon nitride film having a thickness of about 3,000 kPa to 10,000 kPa by a method such as PECVD. After the stacks 645 are stacked, the first contact holes 6645 are formed using techniques such as photolithography and etching.

The source-drain metal is entirely stacked to a thickness of about 500 to 5,000 mm using a sputtering method, and the first contact hole 6645 is buried using a technique such as photolithography and etching. Thus, the source electrode 646 and the drain electrode 647 are formed.

The source-drain metal may be chromium (Cr), tungsten (W), molybdenum (Mo), molybdenum tungsten (Mo-W), aluminum (Al), aluminum alloy, Cu, Ag, Au, etc. Are used according to manufacturing specifications.

Here, a bus electrode 646 is provided in the contact hole corresponding to the source region of the driving thin film transistor, a signal line is provided on the bus electrode 646 of the source region of the switching thin film transistor, and a gate of the driving thin film transistor is provided. A storage electrode connected to the capacitor is formed in the drain region of the electrode and the switching thin film transistor.

In order to protect the fabricated TFT device, a third insulating film 648 is formed by entirely laminating a silicon oxide film or silicon nitride film having a thickness of about 3,000 kPa to about 10,000 kPa using a PECVD method or the like.

A second contact hole 6651 is formed on the third insulating layer 648 in the drain region of the driving thin film transistor by using photolithography and etching techniques. Subsequently, a first electrode 612 made of the ITO positive electrode layer 612 in a region where a ITO electrode having a thickness of about 300 to about 1,000 kW is stacked by using a sputtering method, and a display portion including the second contact hole 6 Cr is formed. ). The ITO positive electrode layer 612 is used as an anode layer for emitting light of an organic light emitting display device.

In order to define the display unit of the organic light emitting display device, a positive type organic photosensitive polyimide having a thickness of about 500 to 10,000 mm is coated on the entire surface, and a predetermined region of the ITO electrode 612 is exposed using a technique such as photolithography. The organic insulating layer pattern 613 is formed.

Here, instead of the organic insulating layer pattern 613, an inorganic insulating layer, such as a silicon oxide film or a silicon nitride layer, may be entirely stacked to a predetermined thickness, and then an inorganic insulating layer pattern may be formed using techniques such as photolithography and etching. .

In addition, the poly-Si TFT backplane 640 including the organic insulating layer pattern 613 is moved into the vacuum deposition apparatus, and the ITO electrode having a predetermined region exposed in the same manner as in the first embodiment of the present invention ( 612) a hole injection layer 615 having a thickness of about 10 to 1,000 mm, a hole transport layer 616 of about 10 to 1,000 mm thick, an organic light emitting layer 617 having a thickness of about 5 to 800 mm thick, and a thickness of 2 mm The organic light emitting layer 625 is formed by sequentially stacking an electron transport layer 618 or the like of about 50 kW using an organic material having a low molecular weight.

In the same manner as in the first embodiment of the present invention, the organic light emitting layer 625 may be formed of an organic material having a polymer form.

In the same manner as in the first embodiment of the present invention, the second electrode 619 formed of the cathode layer 619 is formed. In addition, in order to increase the electron injection efficiency between the second electrode 619 and the electron transport layer 618, lithium fluoride (LiF), lithium oxide (Li ₂ O), and cesium fluoride (CsF) having a thickness of about 1 to 150 Å. ) And one of the lithium-aluminum alloy (Li: Al Alloy).

In the same manner as in the first embodiment of the present invention, the planarization layer 680 covering the second electrode 619 and planarizing an upper surface thereof in order to proceed the uniform heat treatment process of the entire protective layer 690 described later. To form.

Here, the planarization layer 680 uses a shadow mask in which the pad portion is covered inside the vacuum evaporator so that the organic material is not laminated on the pad portion for connecting the external driving circuit and the panel to the low molecular organic material such as Alq ₃ by thermal vacuum deposition. Laminate to a thickness of 500 Å ~ 30,000 Å.

The planarization layer 680 may be formed by stacking a polymer organic material by spin coating, dipping, printing, or by stacking an inorganic material such as silicon oxide or silicon nitride by CVD, sputtering, or the like. It may be.

The silicon nitride film is formed on the transparent substrate 611 including the second electrode 619 and the planarization layer 680 with a thickness of about 1,500 mV or less by the same sputtering and chemical vapor deposition method as in the first embodiment of the present invention. The protective layer 690 is formed by laminating the entire surface.

Here, the thickness of the silicon nitride film is a thickness corresponding to a region where laser light is absorbed into the silicon nitride film during excimer laser heat treatment, which will be described later, and a thickness such that a region not subjected to heat treatment is not formed in the protective layer 690.

Here, when the silicon nitride film is formed using the sputtering method as in the first embodiment of the present invention, hydrogen is not included in the film. However, when the chemical vapor deposition method is used, hydrogen is included in the film. The process is carried out to remove hydrogen in the film. The dehydrogenation process using an excimer laser is performed at an energy density of about 30 mJ / cm <2> -500 mJ / cm <2>.

In the same manner as in the first embodiment of the present invention, in order to improve the film quality of the protective layer 690, an excimer laser is used to prevent the formation of a region in which the heat treatment is not performed in the protective layer 690. Heat treatment is performed at an energy density of about 2 cm 2 to 1,500 mJ / cm 2.

Further, in the same manner as in the first embodiment of the present invention, a silicon nitride film containing no hydrogen is sequentially laminated on the silicon nitride film heat treated in the same manner as described above, and the batch process of laser heat treatment is performed in the same manner as described above. The protective layer 690 may be formed by performing one or more times to form the silicon nitride film of two or more composite layers.

In addition, the protective layer 690 may be formed of two or more composite layers of the heat-treated silicon nitride film and aluminum oxide such as Al ₂ O ₃ having a thickness of about 30 Pa to about 1,500 Pa by using the same method as the first embodiment of the present invention. It may be.

In addition, in the same manner as in the first embodiment of the present invention, the protective layer 690 by adhesively encapsulating an outer protective cap made of glass, plastics, metal, etc. to cover the above-described structure on the transparent substrate 611. It is also possible to reinforce the mechanical strength of the.

In the second exemplary embodiment of the present invention, the cathode layer 619 may be formed on the transparent substrate 611 instead of the anode layer 612, and the anode layer 612 may be formed later.

In an active organic light emitting display device according to a second embodiment of the present invention, a voltage is applied between the positive electrode layer 612 and the negative electrode layer 619 of a pixel at a selective position using a transistor on the backplane 640. When applied, the ground state after the electrons are excited while the holes injected through the hole transport layer 616 between the two electrodes and electrons injected through the electron transport layer 618 meet and recombine in the organic light emitting layer 617. To emit light.

Preferred embodiments of the present invention are described above for the purpose of illustration, and those skilled in the art will be able to make various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications and changes belong to the following claims Should be seen.

1 is a process cross-sectional view of an organic light emitting display device according to the prior art.

2 is a process cross-sectional view of an active organic light emitting display device according to a conventional second technology.

3 is a cross-sectional view of a conventional organic light emitting display device according to a third technology.

4 is a cross-sectional view of an organic light emitting display device according to a fourth technique.

5 is a cross-sectional view illustrating a passive organic light emitting display device according to a first embodiment of the present invention.

6 is a process cross-sectional view of an active organic light emitting display device according to a second exemplary embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS

11, 211, 311, 411, 511, 611: transparent substrates 12, 212, 312, 412, 512, 612: positive electrode layer (first electrode)

13, 513, and 613: organic insulating layer patterns 14, 514: partition walls

15, 215, 315, 415, 515, 615: hole injection layer 16, 216, 316, 416, 516, 616: hole transport layer

17, 217, 317, 417, 517, 617: organic light emitting layer 18, 218, 318, 418, 518, 618: electron transport layer

525, 625: organic electroluminescent layer 19, 219, 319, 419, 519, 619: negative electrode layer (second electrode)

20: dehumidifier 21: metal cap 22: organic adhesive

230, 330: drivers 240, 340, 640: backplane 250, 350: first substrate 260, 360: second substrate

231, 331: inorganic insulating material 232, 332: organic insulating material

249 and 349: first protective layer 251: flit glass

361: organic sheet 470, 590, 690: protective layer

580, 680: planarization layer 641: buffer layer

642: active layer 643: gate insulating film

644: gate electrode 645: second insulating film

646 a source electrode 647 a drain electrode

648: Third insulating film 6421: N ⁺ region 6422: N ^- region

6451: first contact 6481: second contact

Claims (26)

Forming a first electrode on the transparent substrate; Forming an organic light emitting layer on the first electrode; Forming a second electrode on the organic electroluminescent layer; Forming a planarization layer covering the second electrode and planarizing an upper surface thereof on the second electrode; Forming a protective layer formed of a silicon nitride film on the transparent substrate including the second electrode and the planarization layer; Manufacturing the organic light emitting display device by using an excimer laser to heat-treat the entire silicon nitride film to form a high-density homogeneous film so that an unheated region is not formed in the protective layer. Way. The method of claim 1, An organic light emitting display, characterized in that the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer and the second electrode is used as the anode layer. Method of manufacturing the device. The method of claim 1, Forming an ITO layer with the first electrode; Forming an insulating film having a plurality of openings exposing the ITO layer; And forming a plurality of barrier ribs on the insulating film orthogonal to the ITO layer. The method of claim 1, A method of manufacturing an organic light emitting display device, characterized in that an auxiliary electrode layer is formed on the first electrode or below the first electrode. The method of claim 1, A method of manufacturing an organic light emitting display device, wherein the organic light emitting layer comprises a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer. The method of claim 1, And forming a planarization layer formed of an organic material or an inorganic material on the second electrode. The method of claim 1, The silicon nitride film does not contain hydrogen in the film. The method of manufacturing an organic light emitting display device. The method of claim 1, The silicon nitride film is a manufacturing method of an organic light emitting display device, characterized in that formed to a thickness of less than 1,500 GHz. The method of claim 1, The silicon nitride film is heat-treated using an excimer laser manufacturing method of an organic light emitting display device. 10. The method of claim 9, The excimer laser is an Ar ₂ , Kr ₂ , F ₂ , Xe ₂ , ArF excimer laser is a method of manufacturing an organic light emitting display device, characterized in that the heat treatment. The method of claim 1, The protective layer further comprises the step of forming a heat-treated silicon nitride film layer of two or more composite layers. The method of claim 1, The protective layer further comprises the step of forming a silicon nitride film and aluminum oxide as two or more composite layers. The method of claim 1, A method of manufacturing an organic light emitting display device, the method comprising: sealing an external protective cap on the protective layer. Forming a driving unit including a plurality of transistors and one or more capacitors and having a first electrode on the transparent substrate; Forming an organic light emitting layer on the first electrode of the driving unit; Forming a second electrode on the organic light emitting layer; Forming a planarization layer covering the second electrode and planarizing an upper surface thereof on the second electrode; Forming a protective layer formed of a silicon nitride film on the transparent substrate including the second electrode and the planarization layer; Manufacturing the organic light emitting display device by using an excimer laser to heat-treat the entire silicon nitride film to form a high-density homogeneous film so that an unheated region is not formed in the protective layer. Way. The method of claim 14, The driving unit formed on the transparent substrate is a manufacturing method of an organic light emitting display device comprising a driving transistor, a switching transistor and a capacitor. The method of claim 14, Forming an insulating layer and an active layer and a capacitance layer on the insulating layer on the transparent substrate; Forming a gate insulating film on the insulating film and the active layer; Forming a gate electrode on the insulating layer corresponding to the active layer; Forming a source and a drain electrode on the active layer; Forming a second insulating film on the transparent substrate including the gate insulating film and the gate electrode; Selectively etching the second insulating film and the gate insulating film corresponding to the source and the drain to form a contact hole; Forming a first electrode layer in a contact hole corresponding to a drain and a bus electrode in a contact hole corresponding to a source of the driving transistor; And forming a storage electrode connected to the capacitor on a signal line, the gate electrode of the driving transistor, and the drain of the switching transistor on a bus electrode of the switching transistor source. Manufacturing method. The method of claim 14, An organic light emitting display, characterized in that the first electrode is used as the anode layer and the second electrode is used as the cathode layer, or the first electrode is used as the cathode layer and the second electrode is used as the anode layer. Method of manufacturing the device. The method of claim 14, The organic electroluminescent layer includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and a method for manufacturing an organic light emitting display device comprising an electron injection layer. The method of claim 14, And forming a planarization layer formed of an organic material or an inorganic material on the second electrode layer. The method of claim 14, And the silicon nitride film does not contain hydrogen in the film. The method of claim 14, The silicon nitride film is a manufacturing method of an organic light emitting display device, characterized in that formed to a thickness of less than 1,500 GHz. The method of claim 14, The silicon nitride film is heat-treated using an excimer laser manufacturing method of an organic light emitting display device. 23. The method of claim 22, The excimer laser is an Ar ₂ , Kr ₂ , F ₂ , Xe ₂ , ArF excimer laser is a method of manufacturing an organic light emitting display device, characterized in that the heat treatment. The method of claim 14, The protective layer further comprises the step of forming a heat-treated silicon nitride film layer of two or more composite layers. The method of claim 14, The protective layer further comprises the step of forming a silicon nitride film and aluminum oxide as two or more composite layers. The method of claim 14, A method of manufacturing an organic light emitting display device, the method comprising: sealing an external protective cap on the protective layer.

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