KR101281683B1 - 전하 트랩형 플래시 메모리 소자의 작동 방법 - Google Patents
전하 트랩형 플래시 메모리 소자의 작동 방법 Download PDFInfo
- Publication number
- KR101281683B1 KR101281683B1 KR1020070037166A KR20070037166A KR101281683B1 KR 101281683 B1 KR101281683 B1 KR 101281683B1 KR 1020070037166 A KR1020070037166 A KR 1020070037166A KR 20070037166 A KR20070037166 A KR 20070037166A KR 101281683 B1 KR101281683 B1 KR 101281683B1
- Authority
- KR
- South Korea
- Prior art keywords
- pulse
- perturbation
- erase
- memory device
- program
- Prior art date
Links
- 238000011017 operating method Methods 0.000 title claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 38
- 230000000903 blocking effect Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000010410 layer Substances 0.000 description 34
- 230000006798 recombination Effects 0.000 description 34
- 238000005215 recombination Methods 0.000 description 34
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 230000006641 stabilisation Effects 0.000 description 15
- 238000011105 stabilization Methods 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 230000005516 deep trap Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 230000005641 tunneling Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000001052 transient effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000004807 localization Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008707 rearrangement Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- -1 HfSiON Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000249 far-infrared magnetic resonance spectroscopy Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008048339A JP2008217971A (ja) | 2007-02-28 | 2008-02-28 | 不揮発性メモリ素子の作動方法 |
US12/071,961 US7929349B2 (en) | 2007-02-28 | 2008-02-28 | Method of operating nonvolatile memory device |
JP2008048341A JP2008217972A (ja) | 2007-02-28 | 2008-02-28 | 不揮発性メモリ素子の作動方法 |
CN2008100828030A CN101256836B (zh) | 2007-02-28 | 2008-02-28 | 操作非易失性存储装置的方法 |
US12/071,960 US8018781B2 (en) | 2007-02-28 | 2008-02-28 | Method of operating nonvolatile memory device |
CN2008100741982A CN101256837B (zh) | 2007-02-28 | 2008-02-28 | 操作非易失性存储器装置的方法 |
US13/064,265 US8320186B2 (en) | 2007-02-28 | 2011-03-15 | Method of operating nonvolatile memory device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070020622 | 2007-02-28 | ||
KR1020070020622 | 2007-02-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070087691A Division KR101243861B1 (ko) | 2007-02-28 | 2007-08-30 | 전하 트랩형 플래시 메모리 소자의 작동 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080079972A KR20080079972A (ko) | 2008-09-02 |
KR101281683B1 true KR101281683B1 (ko) | 2013-07-03 |
Family
ID=39891542
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070037166A KR101281683B1 (ko) | 2007-02-28 | 2007-04-16 | 전하 트랩형 플래시 메모리 소자의 작동 방법 |
KR1020070087691A KR101243861B1 (ko) | 2007-02-28 | 2007-08-30 | 전하 트랩형 플래시 메모리 소자의 작동 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070087691A KR101243861B1 (ko) | 2007-02-28 | 2007-08-30 | 전하 트랩형 플래시 메모리 소자의 작동 방법 |
Country Status (2)
Country | Link |
---|---|
KR (2) | KR101281683B1 (zh) |
CN (2) | CN101256837B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101855169B1 (ko) | 2011-10-13 | 2018-05-09 | 삼성전자주식회사 | 불휘발성 메모리 장치, 불휘발성 메모리 장치의 프로그램 방법, 불휘발성 메모리 장치를 포함하는 메모리 시스템 |
KR102282952B1 (ko) * | 2014-12-15 | 2021-07-30 | 삼성전자주식회사 | 스토리지 장치의 동작 방법 |
KR102282962B1 (ko) * | 2014-12-22 | 2021-07-30 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173690A (ja) * | 2001-11-30 | 2003-06-20 | Fujitsu Ltd | 半導体記憶装置及びその駆動方法 |
KR20070005823A (ko) * | 2005-07-06 | 2007-01-10 | 삼성전자주식회사 | 상 변화 메모리 장치 및 그것의 프로그램 방법 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2833585B2 (ja) * | 1996-05-17 | 1998-12-09 | 日本電気株式会社 | 半導体不揮発性記憶装置 |
CN1438654A (zh) * | 2002-02-10 | 2003-08-27 | 旺宏电子股份有限公司 | 快闪存储器的数据擦除方法 |
KR20040107967A (ko) * | 2003-06-16 | 2004-12-23 | 삼성전자주식회사 | Sonos메모리 소자 및 그 정보 소거방법 |
CN100449646C (zh) * | 2004-11-19 | 2009-01-07 | 旺宏电子股份有限公司 | 非易失性记忆体的编程方法及装置 |
-
2007
- 2007-04-16 KR KR1020070037166A patent/KR101281683B1/ko active IP Right Grant
- 2007-08-30 KR KR1020070087691A patent/KR101243861B1/ko active IP Right Grant
-
2008
- 2008-02-28 CN CN2008100741982A patent/CN101256837B/zh active Active
- 2008-02-28 CN CN2008100828030A patent/CN101256836B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003173690A (ja) * | 2001-11-30 | 2003-06-20 | Fujitsu Ltd | 半導体記憶装置及びその駆動方法 |
KR20070005823A (ko) * | 2005-07-06 | 2007-01-10 | 삼성전자주식회사 | 상 변화 메모리 장치 및 그것의 프로그램 방법 |
Also Published As
Publication number | Publication date |
---|---|
CN101256836B (zh) | 2012-11-07 |
KR101243861B1 (ko) | 2013-03-20 |
CN101256837A (zh) | 2008-09-03 |
CN101256837B (zh) | 2013-03-13 |
CN101256836A (zh) | 2008-09-03 |
KR20080079977A (ko) | 2008-09-02 |
KR20080079972A (ko) | 2008-09-02 |
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