KR101281683B1 - 전하 트랩형 플래시 메모리 소자의 작동 방법 - Google Patents

전하 트랩형 플래시 메모리 소자의 작동 방법 Download PDF

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Publication number
KR101281683B1
KR101281683B1 KR1020070037166A KR20070037166A KR101281683B1 KR 101281683 B1 KR101281683 B1 KR 101281683B1 KR 1020070037166 A KR1020070037166 A KR 1020070037166A KR 20070037166 A KR20070037166 A KR 20070037166A KR 101281683 B1 KR101281683 B1 KR 101281683B1
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KR
South Korea
Prior art keywords
pulse
perturbation
erase
memory device
program
Prior art date
Application number
KR1020070037166A
Other languages
English (en)
Korean (ko)
Other versions
KR20080079972A (ko
Inventor
설광수
박상진
이성훈
박성일
김종섭
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to JP2008048339A priority Critical patent/JP2008217971A/ja
Priority to US12/071,961 priority patent/US7929349B2/en
Priority to JP2008048341A priority patent/JP2008217972A/ja
Priority to CN2008100828030A priority patent/CN101256836B/zh
Priority to US12/071,960 priority patent/US8018781B2/en
Priority to CN2008100741982A priority patent/CN101256837B/zh
Publication of KR20080079972A publication Critical patent/KR20080079972A/ko
Priority to US13/064,265 priority patent/US8320186B2/en
Application granted granted Critical
Publication of KR101281683B1 publication Critical patent/KR101281683B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020070037166A 2007-02-28 2007-04-16 전하 트랩형 플래시 메모리 소자의 작동 방법 KR101281683B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008048339A JP2008217971A (ja) 2007-02-28 2008-02-28 不揮発性メモリ素子の作動方法
US12/071,961 US7929349B2 (en) 2007-02-28 2008-02-28 Method of operating nonvolatile memory device
JP2008048341A JP2008217972A (ja) 2007-02-28 2008-02-28 不揮発性メモリ素子の作動方法
CN2008100828030A CN101256836B (zh) 2007-02-28 2008-02-28 操作非易失性存储装置的方法
US12/071,960 US8018781B2 (en) 2007-02-28 2008-02-28 Method of operating nonvolatile memory device
CN2008100741982A CN101256837B (zh) 2007-02-28 2008-02-28 操作非易失性存储器装置的方法
US13/064,265 US8320186B2 (en) 2007-02-28 2011-03-15 Method of operating nonvolatile memory device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070020622 2007-02-28
KR1020070020622 2007-02-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020070087691A Division KR101243861B1 (ko) 2007-02-28 2007-08-30 전하 트랩형 플래시 메모리 소자의 작동 방법

Publications (2)

Publication Number Publication Date
KR20080079972A KR20080079972A (ko) 2008-09-02
KR101281683B1 true KR101281683B1 (ko) 2013-07-03

Family

ID=39891542

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020070037166A KR101281683B1 (ko) 2007-02-28 2007-04-16 전하 트랩형 플래시 메모리 소자의 작동 방법
KR1020070087691A KR101243861B1 (ko) 2007-02-28 2007-08-30 전하 트랩형 플래시 메모리 소자의 작동 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020070087691A KR101243861B1 (ko) 2007-02-28 2007-08-30 전하 트랩형 플래시 메모리 소자의 작동 방법

Country Status (2)

Country Link
KR (2) KR101281683B1 (zh)
CN (2) CN101256837B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101855169B1 (ko) 2011-10-13 2018-05-09 삼성전자주식회사 불휘발성 메모리 장치, 불휘발성 메모리 장치의 프로그램 방법, 불휘발성 메모리 장치를 포함하는 메모리 시스템
KR102282952B1 (ko) * 2014-12-15 2021-07-30 삼성전자주식회사 스토리지 장치의 동작 방법
KR102282962B1 (ko) * 2014-12-22 2021-07-30 삼성전자주식회사 스토리지 장치 및 스토리지 장치의 동작 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003173690A (ja) * 2001-11-30 2003-06-20 Fujitsu Ltd 半導体記憶装置及びその駆動方法
KR20070005823A (ko) * 2005-07-06 2007-01-10 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2833585B2 (ja) * 1996-05-17 1998-12-09 日本電気株式会社 半導体不揮発性記憶装置
CN1438654A (zh) * 2002-02-10 2003-08-27 旺宏电子股份有限公司 快闪存储器的数据擦除方法
KR20040107967A (ko) * 2003-06-16 2004-12-23 삼성전자주식회사 Ｓｏｎｏｓ메모리 소자 및 그 정보 소거방법
CN100449646C (zh) * 2004-11-19 2009-01-07 旺宏电子股份有限公司 非易失性记忆体的编程方法及装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003173690A (ja) * 2001-11-30 2003-06-20 Fujitsu Ltd 半導体記憶装置及びその駆動方法
KR20070005823A (ko) * 2005-07-06 2007-01-10 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 방법

Also Published As

Publication number Publication date
CN101256836B (zh) 2012-11-07
KR101243861B1 (ko) 2013-03-20
CN101256837A (zh) 2008-09-03
CN101256837B (zh) 2013-03-13
CN101256836A (zh) 2008-09-03
KR20080079977A (ko) 2008-09-02
KR20080079972A (ko) 2008-09-02

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