KR101251676B1 - 향상된 셀 안정성을 갖는 ｓｒａｍ 및 그 방법 - Google Patents

향상된 셀 안정성을 갖는 ｓｒａｍ 및 그 방법 Download PDF

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Publication number
KR101251676B1
KR101251676B1 KR1020077015836A KR20077015836A KR101251676B1 KR 101251676 B1 KR101251676 B1 KR 101251676B1 KR 1020077015836 A KR1020077015836 A KR 1020077015836A KR 20077015836 A KR20077015836 A KR 20077015836A KR 101251676 B1 KR101251676 B1 KR 101251676B1
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South Korea
Prior art keywords
transistor
coupled
storage node
current path
contact
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Korean (ko)
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KR20070104548A (ko
Inventor
라빈드라라즈 라마라주
프라샨트 유. 켄카레
조젠드라 씨. 사르커
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프리스케일 세미컨덕터, 인크.
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020077015836A 2005-01-12 2005-12-14 향상된 셀 안정성을 갖는 ｓｒａｍ 및 그 방법 Expired - Lifetime KR101251676B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/033,934 US7161827B2 (en) 2005-01-12 2005-01-12 SRAM having improved cell stability and method therefor
US11/033,934 2005-01-12
PCT/US2005/045208 WO2006076113A1 (en) 2005-01-12 2005-12-14 Sram having improved cell stability and method therefor

Publications (2)

Publication Number Publication Date
KR20070104548A KR20070104548A (ko) 2007-10-26
KR101251676B1 true KR101251676B1 (ko) 2013-04-05

Family

ID=36653059

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077015836A Expired - Lifetime KR101251676B1 (ko) 2005-01-12 2005-12-14 향상된 셀 안정성을 갖는 ｓｒａｍ 및 그 방법

Country Status (4)

Country Link
US (1) US7161827B2 (enExample)
JP (1) JP5114209B2 (enExample)
KR (1) KR101251676B1 (enExample)
WO (1) WO2006076113A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160093456A (ko) 2015-01-29 2016-08-08 경북대학교 산학협력단 반도체 메모리 장치

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7403426B2 (en) * 2005-05-25 2008-07-22 Intel Corporation Memory with dynamically adjustable supply
US7554841B2 (en) * 2006-09-25 2009-06-30 Freescale Semiconductor, Inc. Circuit for storing information in an integrated circuit and method therefor
JP2008103028A (ja) * 2006-10-19 2008-05-01 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7859919B2 (en) * 2008-08-27 2010-12-28 Freescale Semiconductor, Inc. Memory device and method thereof
US8233341B2 (en) * 2009-09-01 2012-07-31 Texas Instruments Incorporated Method and structure for SRAM cell trip voltage measurement
US9865330B2 (en) * 2010-11-04 2018-01-09 Qualcomm Incorporated Stable SRAM bitcell design utilizing independent gate FinFET
US8773940B2 (en) 2012-01-17 2014-07-08 Freescale Semiconductor, Inc. Skewed SRAM cell
US9263122B2 (en) * 2013-10-21 2016-02-16 Taiwan Semiconductor Manufacturing Company Ltd. Data-controlled auxiliary branches for SRAM cell
US12127387B2 (en) 2021-07-30 2024-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Gate-all-around high-density and high-speed SRAM cells

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6363011B1 (en) * 1996-05-01 2002-03-26 Cypress Semiconductor Corporation Semiconductor non-volatile latch device including non-volatile elements
JP2004013923A (ja) * 2002-06-03 2004-01-15 Mitsubishi Electric Corp 記憶回路
US20040214389A1 (en) * 2002-07-08 2004-10-28 Madurawe Raminda Udaya Semiconductor latches and SRAM devices
US20040238892A1 (en) * 2002-03-19 2004-12-02 Mu-Kyoung Jung Reduced floating body effect static random access memory cells and methods for fabricating the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04298887A (ja) * 1991-03-26 1992-10-22 Nippon Telegr & Teleph Corp <Ntt> メモリ回路
US5710742A (en) * 1995-05-12 1998-01-20 International Business Machines Corporation High density two port SRAM cell for low voltage CMOS applications
US5828597A (en) * 1997-04-02 1998-10-27 Texas Instruments Incorporated Low voltage, low power static random access memory cell
JP4656714B2 (ja) * 2000-10-10 2011-03-23 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6510076B1 (en) * 2002-02-12 2003-01-21 Pmc-Sierra, Inc. Variable read/write margin high-performance soft-error tolerant SRAM bit cell
US6924560B2 (en) * 2003-08-08 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Compact SRAM cell with FinFET

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6363011B1 (en) * 1996-05-01 2002-03-26 Cypress Semiconductor Corporation Semiconductor non-volatile latch device including non-volatile elements
US20040238892A1 (en) * 2002-03-19 2004-12-02 Mu-Kyoung Jung Reduced floating body effect static random access memory cells and methods for fabricating the same
JP2004013923A (ja) * 2002-06-03 2004-01-15 Mitsubishi Electric Corp 記憶回路
US20040214389A1 (en) * 2002-07-08 2004-10-28 Madurawe Raminda Udaya Semiconductor latches and SRAM devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160093456A (ko) 2015-01-29 2016-08-08 경북대학교 산학협력단 반도체 메모리 장치

Also Published As

Publication number Publication date
KR20070104548A (ko) 2007-10-26
US7161827B2 (en) 2007-01-09
JP5114209B2 (ja) 2013-01-09
WO2006076113A1 (en) 2006-07-20
US20060152964A1 (en) 2006-07-13
JP2008527603A (ja) 2008-07-24

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