KR101224321B1 - 다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물 - Google Patents

다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물 Download PDF

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Publication number
KR101224321B1
KR101224321B1 KR1020097013921A KR20097013921A KR101224321B1 KR 101224321 B1 KR101224321 B1 KR 101224321B1 KR 1020097013921 A KR1020097013921 A KR 1020097013921A KR 20097013921 A KR20097013921 A KR 20097013921A KR 101224321 B1 KR101224321 B1 KR 101224321B1
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polishing composition
substrate
polishing
aluminum
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KR20090107026A (ko
Inventor
블라스타 브러식
렌지 조우
폴 피니
크리스토퍼 톰슨
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020097013921A 2006-12-06 2007-12-04 다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물 Active KR101224321B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/634,576 2006-12-06
US11/634,576 US9343330B2 (en) 2006-12-06 2006-12-06 Compositions for polishing aluminum/copper and titanium in damascene structures
PCT/US2007/024902 WO2008070113A1 (en) 2006-12-06 2007-12-04 Compositions for polishing aluminum/copper and titanium in damascene structures

Publications (2)

Publication Number Publication Date
KR20090107026A KR20090107026A (ko) 2009-10-12
KR101224321B1 true KR101224321B1 (ko) 2013-01-18

Family

ID=39492555

Family Applications (1)

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KR1020097013921A Active KR101224321B1 (ko) 2006-12-06 2007-12-04 다마신 구조 내의 알루미늄/구리 및 티타늄 연마용 조성물

Country Status (8)

Country Link
US (1) US9343330B2 (cg-RX-API-DMAC7.html)
EP (1) EP2092036B1 (cg-RX-API-DMAC7.html)
JP (1) JP5491190B2 (cg-RX-API-DMAC7.html)
KR (1) KR101224321B1 (cg-RX-API-DMAC7.html)
CN (1) CN101553550B (cg-RX-API-DMAC7.html)
SG (1) SG177186A1 (cg-RX-API-DMAC7.html)
TW (1) TWI398473B (cg-RX-API-DMAC7.html)
WO (1) WO2008070113A1 (cg-RX-API-DMAC7.html)

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TWI629347B (zh) * 2012-07-17 2018-07-11 福吉米股份有限公司 使用合金材料硏磨用組成物來研磨合金材料的方法
US8961807B2 (en) * 2013-03-15 2015-02-24 Cabot Microelectronics Corporation CMP compositions with low solids content and methods related thereto
TWI561620B (en) * 2014-06-20 2016-12-11 Cabot Microelectronics Corp Cmp slurry compositions and methods for aluminum polishing
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
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TWI822659B (zh) 2016-10-27 2023-11-21 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
JP7197366B2 (ja) * 2016-12-26 2022-12-27 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US10515913B2 (en) 2017-03-17 2019-12-24 Invensas Bonding Technologies, Inc. Multi-metal contact structure
US10446441B2 (en) 2017-06-05 2019-10-15 Invensas Corporation Flat metal features for microelectronics applications
US10840205B2 (en) 2017-09-24 2020-11-17 Invensas Bonding Technologies, Inc. Chemical mechanical polishing for hybrid bonding
US11043151B2 (en) 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
US11056348B2 (en) 2018-04-05 2021-07-06 Invensas Bonding Technologies, Inc. Bonding surfaces for microelectronics
US10790262B2 (en) 2018-04-11 2020-09-29 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US11244916B2 (en) 2018-04-11 2022-02-08 Invensas Bonding Technologies, Inc. Low temperature bonded structures
US11393779B2 (en) 2018-06-13 2022-07-19 Invensas Bonding Technologies, Inc. Large metal pads over TSV
CN120413551A (zh) 2018-06-13 2025-08-01 隔热半导体粘合技术公司 作为焊盘的tsv
US11011494B2 (en) 2018-08-31 2021-05-18 Invensas Bonding Technologies, Inc. Layer structures for making direct metal-to-metal bonds at low temperatures in microelectronics
US11158573B2 (en) 2018-10-22 2021-10-26 Invensas Bonding Technologies, Inc. Interconnect structures
US11244920B2 (en) 2018-12-18 2022-02-08 Invensas Bonding Technologies, Inc. Method and structures for low temperature device bonding
WO2021236361A1 (en) 2020-05-19 2021-11-25 Invensas Bonding Technologies, Inc. Laterally unconfined structure
US11264357B1 (en) 2020-10-20 2022-03-01 Invensas Corporation Mixed exposure for large die
KR20230125309A (ko) 2020-12-28 2023-08-29 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 기판-관통 비아를 가지는 구조체 및 이를 형성하기위한 방법
JP2024501017A (ja) 2020-12-28 2024-01-10 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 基板貫通ビアを有する構造体及びそれを形成する方法
KR20230126736A (ko) 2020-12-30 2023-08-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 전도성 특징부를 갖는 구조 및 그 형성방법
US12506114B2 (en) 2022-12-29 2025-12-23 Adeia Semiconductor Bonding Technologies Inc. Directly bonded metal structures having aluminum features and methods of preparing same

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Also Published As

Publication number Publication date
JP2010512030A (ja) 2010-04-15
EP2092036A4 (en) 2011-02-09
SG177186A1 (en) 2012-01-30
CN101553550A (zh) 2009-10-07
US20080134585A1 (en) 2008-06-12
JP5491190B2 (ja) 2014-05-14
EP2092036B1 (en) 2015-09-09
WO2008070113A1 (en) 2008-06-12
TW200902612A (en) 2009-01-16
CN101553550B (zh) 2012-11-07
US9343330B2 (en) 2016-05-17
EP2092036A1 (en) 2009-08-26
TWI398473B (zh) 2013-06-11
KR20090107026A (ko) 2009-10-12

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