KR101206178B1 - 동적으로 조정 가능한 소프트 프로그램 검증 전압 레벨을 갖는 비휘발성 메모리 및 그를 위한 방법 - Google Patents

동적으로 조정 가능한 소프트 프로그램 검증 전압 레벨을 갖는 비휘발성 메모리 및 그를 위한 방법 Download PDF

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KR101206178B1
KR101206178B1 KR1020107002251A KR20107002251A KR101206178B1 KR 101206178 B1 KR101206178 B1 KR 101206178B1 KR 1020107002251 A KR1020107002251 A KR 1020107002251A KR 20107002251 A KR20107002251 A KR 20107002251A KR 101206178 B1 KR101206178 B1 KR 101206178B1
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block
verify voltage
voltage level
soft program
program verify
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KR20100053539A (ko
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리차드 케이. 에구찌
존 에스. 초이
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램버스 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step

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  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1020107002251A 2007-07-31 2008-06-17 동적으로 조정 가능한 소프트 프로그램 검증 전압 레벨을 갖는 비휘발성 메모리 및 그를 위한 방법 Active KR101206178B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/831,168 US7649782B2 (en) 2007-07-31 2007-07-31 Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor
US11/831,168 2007-07-31
PCT/US2008/067222 WO2009017889A1 (en) 2007-07-31 2008-06-17 Non-volatile memory having a dynamically adjustable soft program verify voltage level and method therefor

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KR20100053539A KR20100053539A (ko) 2010-05-20
KR101206178B1 true KR101206178B1 (ko) 2012-11-29

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KR1020107002251A Active KR101206178B1 (ko) 2007-07-31 2008-06-17 동적으로 조정 가능한 소프트 프로그램 검증 전압 레벨을 갖는 비휘발성 메모리 및 그를 위한 방법

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US (1) US7649782B2 (cg-RX-API-DMAC7.html)
JP (1) JP2010535395A (cg-RX-API-DMAC7.html)
KR (1) KR101206178B1 (cg-RX-API-DMAC7.html)
TW (1) TWI457928B (cg-RX-API-DMAC7.html)
WO (1) WO2009017889A1 (cg-RX-API-DMAC7.html)

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US8391070B2 (en) * 2008-12-02 2013-03-05 Spansion Llc Moving program verify level for programming of memory
US7483311B2 (en) * 2006-02-07 2009-01-27 Micron Technology, Inc. Erase operation in a flash memory device
US8189396B2 (en) 2006-12-14 2012-05-29 Mosaid Technologies Incorporated Word line driver in a hierarchical NOR flash memory
NZ562200A (en) * 2007-10-04 2008-11-28 Arc Innovations Ltd Method and system for updating a stored data value in a non-volatile memory
US8755229B1 (en) 2009-06-23 2014-06-17 Micron Technology, Inc. Limiting flash memory over programming
JP2011164994A (ja) * 2010-02-10 2011-08-25 Toshiba Corp メモリシステム
US8482987B2 (en) 2010-09-02 2013-07-09 Macronix International Co., Ltd. Method and apparatus for the erase suspend operation
US8427877B2 (en) * 2011-02-11 2013-04-23 Freescale Semiconductor, Inc. Digital method to obtain the I-V curves of NVM bitcells
US8526240B2 (en) * 2011-08-17 2013-09-03 Ememory Technology Inc. Flash memory and memory cell programming method thereof
WO2013100958A1 (en) * 2011-12-28 2013-07-04 Intel Corporation Cycling endurance extending for memory cells of a non-volatile memory array
US8760923B2 (en) * 2012-08-28 2014-06-24 Freescale Semiconductor, Inc. Non-volatile memory (NVM) that uses soft programming
US8929142B2 (en) 2013-02-05 2015-01-06 Sandisk Technologies Inc. Programming select gate transistors and memory cells using dynamic verify level
US8995198B1 (en) 2013-10-10 2015-03-31 Spansion Llc Multi-pass soft programming
GB201322075D0 (en) 2013-12-13 2014-01-29 Ibm Device for selecting a level for at least one read voltage
US20150270004A1 (en) * 2014-03-20 2015-09-24 Elite Semiconductor Memory Technology Inc. Method for Performing Erase Operation in Non-Volatile Memory
CN105006252A (zh) * 2014-04-17 2015-10-28 晶豪科技股份有限公司 抹除非易失性存储器的方法
US10825529B2 (en) 2014-08-08 2020-11-03 Macronix International Co., Ltd. Low latency memory erase suspend operation
US9401217B2 (en) 2014-08-27 2016-07-26 Freescale Semiconductor, Inc. Flash memory with improved read performance
US9563373B2 (en) 2014-10-21 2017-02-07 International Business Machines Corporation Detecting error count deviations for non-volatile memory blocks for advanced non-volatile memory block management
US10365859B2 (en) 2014-10-21 2019-07-30 International Business Machines Corporation Storage array management employing a merged background management process
US9990279B2 (en) 2014-12-23 2018-06-05 International Business Machines Corporation Page-level health equalization
US10339048B2 (en) 2014-12-23 2019-07-02 International Business Machines Corporation Endurance enhancement scheme using memory re-evaluation
KR102452994B1 (ko) 2016-09-06 2022-10-12 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US10269439B2 (en) 2017-03-28 2019-04-23 Western Digital Technologies, Inc. Post write erase conditioning
KR102569820B1 (ko) * 2018-10-25 2023-08-24 에스케이하이닉스 주식회사 메모리 컨트롤러 및 그 동작 방법
CN111863089B (zh) * 2019-04-24 2022-07-19 华邦电子股份有限公司 存储器装置及非易失性存储器的控制方法
US11705206B2 (en) * 2021-08-17 2023-07-18 Sandisk Technologies Llc Modifying program and erase parameters for single-bit memory cells to improve single-bit/multi-bit hybrid ratio
US12386515B2 (en) * 2023-02-15 2025-08-12 Micron Technology, Inc. Modification of program voltage level with read or program-verify adjustment for improving reliability in memory devices

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JP2002230981A (ja) 2001-01-29 2002-08-16 Sharp Corp 不揮発性半導体メモリ装置およびその消去方法

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US5521867A (en) 1993-12-01 1996-05-28 Advanced Micro Devices, Inc. Adjustable threshold voltage conversion circuit
US5963477A (en) 1997-12-09 1999-10-05 Macronix International Co., Ltd. Flash EPROM erase algorithm with wordline level retry
US6496417B1 (en) * 1999-06-08 2002-12-17 Macronix International Co., Ltd. Method and integrated circuit for bit line soft programming (BLISP)
JP3704460B2 (ja) * 2000-07-05 2005-10-12 シャープ株式会社 不揮発性半導体メモリ装置の消去方法
US6614695B2 (en) 2001-08-24 2003-09-02 Micron Technology, Inc. Non-volatile memory with block erase
US6684173B2 (en) * 2001-10-09 2004-01-27 Micron Technology, Inc. System and method of testing non-volatile memory cells
JP2003242787A (ja) * 2002-02-14 2003-08-29 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US7073103B2 (en) * 2002-12-05 2006-07-04 Sandisk Corporation Smart verify for multi-state memories
US7230854B2 (en) * 2005-08-01 2007-06-12 Sandisk Corporation Method for programming non-volatile memory with self-adjusting maximum program loop
JP2007102923A (ja) * 2005-10-04 2007-04-19 Toshiba Corp 不揮発性半導体記憶装置およびそのデータ消去方法

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JP2002230981A (ja) 2001-01-29 2002-08-16 Sharp Corp 不揮発性半導体メモリ装置およびその消去方法

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Publication number Publication date
JP2010535395A (ja) 2010-11-18
TW200910350A (en) 2009-03-01
US20090034339A1 (en) 2009-02-05
WO2009017889A1 (en) 2009-02-05
US7649782B2 (en) 2010-01-19
TWI457928B (zh) 2014-10-21
KR20100053539A (ko) 2010-05-20

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