KR101189276B1 - Organic light emitting diode display and method for manufacturing thereof - Google Patents

Abstract

The present invention provides a method of forming a plurality of signal lines and a plurality of thin film transistors on a substrate, forming a protective film on the signal lines and the thin film transistors, forming a photosensitive member having a plurality of openings on the protective film, and forming the photosensitive member. Removing the passivation layer using a mask, stacking a conductive layer on the entire surface including the photosensitive member and etching the photo to form a first electrode, forming a light emitting member in a portion of the plurality of openings, and the light emitting member And forming a second electrode on the photosensitive member.

OLED displays, masks, passivation layers, barrier ribs, insulating members

Description

Organic light-emitting display device and manufacturing method therefor {ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THEREOF}

1 is an equivalent circuit diagram of an OLED display according to an embodiment of the present invention,

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment of the present invention.

3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along line III-III;

4, 6, 8, 10, 12, and 14 are layout views in an intermediate step of a method of manufacturing the organic light emitting display device of FIGS. 2 and 3 according to an embodiment of the present invention;

FIG. 5 is a cross-sectional view of the organic light emitting diode display of FIG. 4 taken along the line V-V. FIG.

FIG. 7 is a cross-sectional view of the organic light emitting diode display of FIG. 6 taken along the line VII-VII.

FIG. 9 is a cross-sectional view of the organic light emitting diode display of FIG. 8 taken along the line IX-IX. FIG.

FIG. 11 is a cross-sectional view of the organic light emitting diode display of FIG. 10 taken along the line XI-XI. FIG.

FIG. 13 is a cross-sectional view of the organic light emitting diode display of FIG. 12 taken along the line XIII-XIII.

FIG. 15 is a cross-sectional view of the organic light emitting diode display of FIG. 14 taken along the line XV-XV.

<Description of the symbols for the main parts of the drawings>

110: Insulation substrate 121: Gate line

124a: first control electrode 124b: second control electrode

127: sustain electrode 129: end of gate line

140: gate insulating film 154a: first semiconductor

154b: second semiconductor 171: data line

172: driving voltage line 85: connecting member

173a: first input electrode 173b: second input electrode

175a: first output electrode 175b: second output electrode

179: end of data line 81, 82: contact auxiliary member

181, 182, 185a, 185b: contact hole

191: pixel electrode 270: common electrode

361: photosensitive members 365, 367, 368, 369: openings

370: light emitting member

Qs: switching transistor Qd: driving transistor

LD: organic light emitting diamond Vss: common voltage

Cst: retaining capacitor

The present invention relates to an organic light emitting display and a method of manufacturing the same.

2. Description of the Related Art In recent years, a cathode ray tube (CRT) has been replaced by a liquid crystal display (LCD) in accordance with such a demand.

However, the liquid crystal display device requires not only a separate backlight as a light emitting device, but also has many problems in response speed and viewing angle.

Recently, as a display device capable of overcoming such a problem, an organic light emitting diode display (OLED display) has attracted attention.

The organic light emitting diode display includes two electrodes and a light emitting layer positioned therebetween, and electrons injected from one electrode and holes injected from another electrode are combined in the light emitting layer to form excitons. And excitons emit light while emitting energy.

The organic light emitting diode display is self-luminous and does not require a separate backlight, which is advantageous in terms of power consumption and can be manufactured in a thinner structure. In addition, the response speed, viewing angle, and contrast ratio are also superior to those of the liquid crystal display.

The OLED display can be divided into a passive OLED display and an active OLED display according to a driving method. Among them, an active organic light emitting display device that drives each pixel using a thin film transistor (TFT) as a switching element and a driving element is advantageous in terms of high resolution, power consumption, and large area.

An active organic light emitting diode display largely includes a thin film transistor, an organic light emitting member, and a partition for defining the organic light emitting member.

The partition wall protects the thin film transistor, prevents the light emitting material from mixing between adjacent pixels, and prevents a short circuit between the anode and the cathode.

However, since the partition wall is formed by a separate photo process, the number of masks required during the process increases.

Therefore, the technical problem to be achieved by the present invention is to reduce the number of masks and simplify the process.

According to an exemplary embodiment, an organic light emitting diode display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting the first signal line, and a first signal line and the second signal line formed on the substrate. A plurality of thin film transistors having an electrical connection with a signal line, a passivation layer formed on the thin film transistor, a photosensitive member formed on the passivation layer and having a first opening, and connected to one of the thin film transistors; And a first electrode separated from the first electrode, a light emitting member defined on the first photosensitive member, and a second electrode formed on the light emitting member.

In addition, the first electrode may have a smaller area than the first opening.

In addition, an edge of the first electrode may be positioned in the first opening and contact the light emitting member.

In addition, the first electrode may be located about 1 to 5 μm from the boundary of the first opening.

In addition, one of the thin film transistors may be in side contact with the first electrode.

In addition, the first electrode may be in contact with the substrate.

In addition, the light emitting member may at least partially overlap the thin film transistor.

In addition, the passivation layer may be removed from the first opening.

The photosensitive member may further include a second opening, and the second opening may further include a connection member separated from the photosensitive member and connecting the plurality of thin film transistors to each other.

The display device may further include an insulation member covering the connection member.

In addition, the passivation layer may be removed from the second opening.

In addition, the connection member may be in contact with the substrate.

In addition, the protective film and the photosensitive member may be an organic film composed of a single layer.

In addition, the organic layer may include a photocurable organic material.

  In addition, according to an embodiment of the present invention, a method of manufacturing an organic light emitting display device may include forming a plurality of signal lines and a plurality of thin film transistors on a substrate, forming a passivation layer on the signal lines and the thin film transistors, and forming a plurality of passivation layers on the passivation layer. Forming a photosensitive member having an opening of the photosensitive member, removing the protective film using the photosensitive member as a mask, stacking a conductive layer on the entire surface including the photosensitive member and etching the photo to form a first electrode; Forming a light emitting member on a part of the substrate, and forming a second electrode on the light emitting member and the photosensitive member.

In addition, a portion of the thin film transistor may be exposed in the removing of the passivation layer.

The method may further include forming an insulating member on a part of the opening after forming the first electrode.

In addition, the forming of the insulating member may use a shadow mask.

In addition, the forming of the first electrode may be performed so that the first electrode and the photosensitive member do not overlap.

The method may further include curing the photosensitive member after removing the protective film.

In addition, the forming of the protective film and the forming of the photosensitive member may be formed of a single organic film.

In addition, a part of the photosensitive member may be slitted in the removing of the protective layer.

Further, a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention includes forming a plurality of signal lines and a plurality of thin film transistors on a substrate, stacking an organic insulating layer on the signal lines and the thin film transistors, and forming the organic insulating film. Removing a portion of the thin film transistor to form an opening exposing a portion of the thin film transistor, stacking a conductive layer on the entire surface including the organic insulating layer and etching the photo to form a first electrode, and forming a light emitting member in a portion of the opening And forming a second electrode on the light emitting member and the organic insulating layer.

The method may further include forming an insulating member on a part of the opening after forming the first electrode.

In addition, the forming of the insulating member may use a shadow mask.

The forming of the first electrode may be performed so that the first electrode and the organic insulating layer do not overlap each other.

An organic light emitting diode display according to an exemplary embodiment of the present invention may include a substrate, a first signal line formed on the substrate, a second signal line intersecting the first signal line, and a first signal line formed on the substrate. A plurality of thin film transistors having an electrical connection relationship with a second signal line, a protective film formed on the thin film transistor, a barrier rib formed on the protective film and having a first opening, and at least partially contacting the substrate in the first opening. And a first electrode, a light emitting member defined on the partition wall, and a second electrode formed on the light emitting member.

In addition, the first electrode may have a smaller area than the first opening.

In addition, the first electrode may be located about 1 to 5 μm from the boundary of the first opening.

In addition, one of the thin film transistors may be in side contact with the first electrode.

In addition, the protective layer may be removed from the first opening.

In addition, the barrier rib may further include a second opening, and the second opening may further include a connection member contacting the substrate and connecting the plurality of thin film transistors to each other.

The display device may further include an insulation member covering the connection member.

An organic light emitting diode display according to an exemplary embodiment of the present invention may include a substrate, a first signal line formed on the substrate, a second signal line intersecting the first signal line, and a first signal line formed on the substrate. A switching thin film transistor connected to a second signal line, a driving thin film transistor connected to the switching thin film transistor, a driving voltage line connected to the driving thin film transistor, a passivation layer formed on the entire surface of the substrate, and formed on the passivation layer. A photosensitive member having an opening, a first electrode connected to the driving thin film transistor and separated from the photosensitive member, a light emitting member formed on the first electrode and defined by the photosensitive member, and formed on the light emitting member And a second electrode.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness is enlarged to clearly represent the layers and regions. Like parts are designated by like reference numerals throughout the specification. When a portion of a layer, film, region, plate, etc. is said to be "on top" of another part, this includes not only when the other part is "right on" but also another part in the middle. Conversely, when a part is "directly over" another part, it means that there is no other part in the middle.

First, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172, and a plurality of pixels connected to them and arranged in a substantially matrix form. do.

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a plurality of data lines 171 for transmitting a data signal, and a plurality of driving voltage lines for transmitting a driving voltage. and a driving voltage line 172. The gate lines 121 extend substantially in the row direction, are substantially parallel to each other, and the data lines 171 and the driving voltage lines 172 extend in a substantially column direction and are substantially parallel to each other.

Each pixel PX includes a switching transistor Qs, a driving transistor Qd, a storage capacitor Cst, and an organic light emitting diode OLED. It includes.

The switching transistor Qs has a control terminal, an input terminal and an output terminal. The control terminal is connected to the gate line 121 and the input terminal is connected to the data line 171 , And an output terminal thereof is connected to the driving transistor Qd. The switching transistor Qs transfers the data signal applied to the data line 171 to the driving transistor Qd in response to the scan signal applied to the gate line 121.

The driving transistor Qd also has a control terminal, an input terminal and an output terminal, the control terminal being connected to the switching transistor Qs, the input terminal being connected to the driving voltage line 172, and the output terminal being the organic light emitting diode. It is connected to (LD). The driving transistor Qd flows an output current I _LD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving transistor Qd. The capacitor Cst charges the data signal applied to the control terminal of the driving transistor Qd and holds it even after the switching transistor Qs is turned off.

The organic light emitting diode LD has an anode connected to the output terminal of the driving transistor Qd and a cathode connected to the common voltage Vss. The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current I _LD of the driving transistor Qd.

The switching transistor Qs and the driving transistor Qd are n-channel field effect transistors (FETs). However, at least one of the switching transistor Qs and the driving transistor Qd may be a p-channel field-effect transistor. In addition, the connection relationship between the transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

Next, the detailed structure of the organic light emitting diode display illustrated in FIG. 1 will be described in detail with reference to FIGS. 2 and 3 along with FIG. 1.

FIG. 2 is a layout view of an organic light emitting diode display according to an exemplary embodiment, and FIG. 3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along line III-III.

A plurality of gates including a plurality of gate lines 121 including a first control electrode 124a and a plurality of second control electrodes 124b on an insulating substrate 110 made of transparent glass or plastic. A gate conductor is formed.

The gate line 121 transmits the gate signal and extends mainly in the horizontal direction. Each gate line 121 includes a wide end portion 129 for connection with another layer or an external driving circuit, and the first control electrode 124a extends upward from the gate line 121. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The second control electrode 124b is separated from the gate line 121 and includes a storage electrode 127 extending downward and briefly changing to the right and extending upward.

The gate conductors 121 and 124b are made of aluminum-based metals such as aluminum (Al) and aluminum alloys, silver-based metals such as silver (Ag) and silver alloys, copper-based metals such as copper (Cu) and copper alloys, and molybdenum (Mo) It may be made of molybdenum-based metals such as molybdenum alloys, chromium (Cr), tantalum (Ta), and titanium (Ti). However, they may have a multi-film structure including two conductive films (not shown) having different physical properties.

Side surfaces of the gate conductors 121 and 124b are inclined with respect to the substrate 110 surface, and the inclination angle is preferably about 30 ° to about 80 °.

A gate insulating layer 140 made of silicon nitride (SiN _x ) or silicon oxide (SiO _x ) is formed on the gate conductors 121 and 124b.

On the gate insulating layer 140, a plurality of first semiconductors 154a and a plurality of second semiconductors 154b made of hydrogenated amorphous silicon (amorphous silicon is abbreviated as a-Si), polycrystalline silicon, or the like. ) Is formed. The first semiconductor 154a is positioned on the first control electrode 124a, and the second semiconductor 154b is positioned on the second control electrode 124b.

A plurality of pairs of first ohmic contacts 163a and 165a and a plurality of pairs of second ohmic contacts 163b and 165b are formed on the first and second semiconductors 154a and 154b, respectively. The ohmic contacts 163a, 163b, 165a, and 165b have an island shape, and may be made of a material such as n + hydrogenated amorphous silicon in which n-type impurities such as phosphorus (P) are heavily doped, or made of silicide. have.

The plurality of data lines 171, the plurality of driving voltage lines 172, and the plurality of first and second output electrodes 175a are disposed on the ohmic contacts 163a, 163b, 165a, and 165b and the gate insulating layer 140. , A plurality of data conductors including 175b are formed.

The data line 171 transmits a data signal and extends mainly in the vertical direction and crosses the gate line 121. Each data line 171 has a wide end portion 179 for connection of a plurality of first input electrodes 173a extending toward the first control electrode 124a with another layer or an external driving circuit. It includes. When a data driving circuit (not shown) generating a data signal is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The driving voltage line 172 transmits the driving voltage and extends mainly in the vertical direction and crosses the gate line 121. Each driving voltage line 172 includes a plurality of second input electrodes 173b extending toward the second control electrode 124b. The driving voltage line 172 overlaps the sustain electrode 127.

The first and second output electrodes 175a and 175b are separated from each other and are separated from the data line 171 and the driving voltage line 172. [ The first input electrode 173a and the first output electrode 175a face each other with respect to the first control electrode 124a, and the second input electrode 173b and the second output electrode 175b are the second control electrode. Facing each other around 124b.

The data conductors 171, 172, 175a, and 175b are preferably made of a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof, and include a refractory metal film (not shown) and a low resistance conductive film (not shown). It may have a multi-layer structure including).

Like the gate conductors 121 and 124b, the data conductors 171, 172, 175a and 175b also preferably have their side surfaces inclined at an inclination angle of about 30 ° to 80 ° with respect to the surface of the substrate 110.

A passivation layer 180 is formed on the data conductors 171, 172, 175a and 175b, the exposed semiconductors 154a and 154b, and the gate insulating layer 140.

The passivation layer 180 is made of an inorganic insulator or an organic insulator, and examples of the inorganic insulator include silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ), and examples of the organic insulator include polyacryl compounds. Can be mentioned. The passivation layer 180 may have a double layer structure of an inorganic layer and an organic layer.

The passivation layer 180 is formed with a plurality of contact holes 182 exposing the end portion 179 of the data line 171, and the gate line 121 is formed in the passivation layer 180 and the gate insulating layer 140. A plurality of contact holes 181 are formed that expose the ends 129 of the. In addition, a contact hole 185b exposing the second output electrode 175b is formed in the passivation layer 180, and a side surface of the first output electrode 175a and a second control electrode are formed in the passivation layer 180 and the gate insulating layer 140. A contact hole 185a which simultaneously exposes the substrate 110 is formed on the side of 124a and between them.

The photosensitive member 361 is formed on the passivation layer 180. The photosensitive member 361 includes an opening 365 exposing the contact hole 185b and the second output electrode 175b, the contact hole 185a and the second control electrode 124b, and the first output electrode 175a. The openings 367 and the openings 368 and 369 exposing the end portions 129 of the gate lines 121 and the end portions 179 of the data lines 171, respectively.

A portion of the photosensitive member 361 surrounding the opening 365 is used as a partition.

The portion of the photosensitive member 361 on the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 is thinner than other portions in order to facilitate connection with an external circuit.

The photosensitive member 361 is made of an organic insulator such as an acrylic resin or a polyimide resin, or an inorganic insulator such as silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ). Can be two or more layers. The photosensitive member 361 may also be made of a photosensitive material including a black pigment, in which case the photosensitive member 361 serves as a light blocking member and the forming process thereof is simple.

The photosensitive member 361 may be used as a mask for forming the contact holes 181, 182, 185a, and 185b of the passivation layer 180 and the gate insulating layer 140.

Meanwhile, when the passivation layer 180 is made of an organic material, the passivation layer 180 and the photosensitive member 361 may be formed of one organic insulating layer. The organic insulating film includes a photocurable material. Opening 365 and second control electrode 124b exposing second output electrode 175b over data conductors 171, 172, 175a, 175b, exposed semiconductors 154a, 154b, and gate insulating layer 140. And openings 367 and 369 exposing an opening 367 simultaneously exposing the first output electrode 175a, an end 129 of the gate line 121, and an end 179 of the data line 171, respectively. An organic insulating film is formed, and in this case, the organic insulating film can function as the photosensitive member 361 and the protective film 180 used as the partition wall.

A plurality of pixel electrodes 191 are formed in the opening 365 defined by the photosensitive member 361. The pixel electrode 191 is in contact with the second output electrode 175b and the substrate 110. The second output electrode 175b is in side contact with the pixel electrode 191, and the gate insulating layer 140 and the passivation layer 180 are removed under the pixel electrode 191, so that the second output electrode 175b is in contact with the pixel electrode 191. The substrate 110 is in direct contact. As such, since the passivation layer 180 and the gate insulating layer 140 are removed under the pixel electrode 191, light loss may be reduced during bottom emission.

The pixel electrode 191 may be spaced apart from the boundary of the opening 365 by a predetermined distance, for example, 1 to 5 μm apart. Accordingly, an end portion of the pixel electrode 191 is exposed through the opening 365.

In another opening 367 defined by the photosensitive member 361, a plurality of connecting members 85 are formed. The connecting member 85 is connected to the second control electrode 124b and the first output electrode 175a through the contact hole 185a. In this case, the second control electrode 124b is in side contact with one side of the connecting member 85, and the first output electrode 175b is in side contact with the other side of the connecting member 85. In addition, the connection member 85 is in contact with the substrate 110 between the second control electrode 124b and the first output electrode 175b.

The connecting member 85 may be spaced apart from the boundary of the opening 367 by a predetermined distance, for example, 1 to 5 μm. Accordingly, the end portion of the connecting member 85 is exposed through the opening 367.

Contact opening members 81 and 82 are formed in the other openings 368 and 369 defined by the photosensitive member 361. The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 171 of the data line 171 through the contact holes 181 and 182, respectively. 121 and the adhesion between the end portions 129 and 179 of the data line 171 and the external device and protect them.

The pixel electrode 191, the connection member 85, and the contact assistants 81 and 82 may be made of a transparent conductor such as ITO or IZO, and in the case of top emission, aluminum or an aluminum alloy, high work It may be made of an opaque conductor such as gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W) or alloys thereof having a work function.

The insulating member 40 is formed on the connection member 85. The insulating member 40 may be made of silicon nitride or silicon oxide, for example, and completely covers and protects the connecting member 85.

An organic light emitting member 370 is formed in the opening 365 defined by the photosensitive member 361.

The organic light emitting member 370 may have a multilayer structure including an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer (not shown) for emitting light.

The light emitting layer is made of an organic material or a mixture of organic and inorganic materials that uniquely emits light of any one of primary colors such as three primary colors of red, green, and blue, and a polyfluorene derivative, (poly Paraphenylene vinylene derivatives, polyphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole, polythiophene derivatives or polymer materials thereof Perylene-based dyes, coumarin-based dyes, laumine-based dyes, rubrene, perylene, 9,10-diphenylanthracene, and tetraphenylbutadiene (Tetraphenylbutadiene), nile red (Nile red), coumarin (coumarin), quinacridone (quinacridone) and the like may be included a compound doped. The organic light emitting diode display displays a desired image by using a spatial sum of primary color light emitted from the emission layer.

The auxiliary layer includes an electron transport layer (not shown) and a hole transport layer (not shown) for balancing electrons and holes, and an electron injection layer for enhancing the injection of electrons and holes ( electron injecting layer (not shown) and hole injecting layer (hole injecting layer) (not shown) and the like, and may include one or two or more layers selected from them. The hole transport layer and the hole injection layer are made of a material having a work function that is about the middle of the pixel electrode 191 and the light emitting layer, and the electron transport layer and the electron injection layer have a work function that is about the middle of the common electrode 270 and the light emitting layer. Is made with. For example, a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid (poly- (3,4-ethylenedioxythiophene: polystyrenesulfonate, PEDOT: PSS)) may be used as the hole transport layer or the hole injection layer.

A common electrode 270 is formed on the entire surface of the substrate including the organic light emitting member 370 and the insulating member 40. The common electrode 270 pairs with the pixel electrode 191 to send a current to the organic light emitting member 370. The insulating member 40 insulates the connection member 85 and the common electrode 270.

The common electrode 270 may be made of an opaque conductive material that has good electron injection and does not affect organic materials. Examples of the common electrode 270 may include aluminum-based metal and barium (Ba). Alternatively, in the case of a top emission type, the transparent or semitransparent conductive material may be made of a single layer including ITO, IZO, aluminum (Al), silver (Ag) having a thin thickness of about 50 to 100 μs, or Ca-Ag, LiF-Al, Ca-Ba, Ca-Ag-ITO may be a multilayer.

In the organic light emitting diode display, the first control electrode 124a connected to the gate line 121, the first input electrode 173a and the first output electrode 175a connected to the data line 171 may be formed. 1 together with the semiconductor 154a, a switching TFT Qs is formed, and a channel of the switching TFT Qs is formed between the first input electrode 173a and the first output electrode 175a. 1 is formed in the semiconductor 154a. The second control electrode 124b connected to the first output electrode 175a, the second input electrode 173b connected to the driving voltage line 172, and the second output electrode connected to the pixel electrode 191 ( 175b forms a driving TFT Qd together with the second semiconductor 154b, and a channel of the driving TFT Qd is formed between the second input electrode 173b and the second output electrode 175b. It is formed in the second semiconductor 154b.

Although only one switching thin film transistor and one driving thin film transistor are shown in the present embodiment, at least one thin film transistor and a plurality of wirings for driving the thin film transistor may be further included. Accordingly, the organic light emitting diode LD may be driven even for a long time. ) And the driving transistor Qd may be prevented or compensated for, thereby preventing the life of the organic light emitting diode display from being shortened.

The pixel electrode 191, the organic light emitting member 370, and the common electrode 270 form an organic light emitting diode LD, and the pixel electrode 191 is an anode and the common electrode 270 is a cathode. Alternatively, the pixel electrode 191 becomes a cathode and the common electrode 270 becomes an anode. In addition, the storage electrode 127 and the driving voltage line 172 overlapping each other form a storage capacitor Cst.

On the other hand, when the semiconductors 154a and 154b are polycrystalline silicon, an intrinsic region (not shown) facing the control electrodes 124a and 124b and an impurity region (extrinsic region) located at both sides thereof are not shown. Not included). The impurity region is electrically connected to the input electrodes 173a and 173b and the output electrodes 175a and 175b, and the ohmic contacts 163a, 163b, 165a and 165b may be omitted.

In addition, the control electrodes 124a and 124b may be disposed on the semiconductors 154a and 154b, and the gate insulating layer 140 may be positioned between the semiconductors 154a and 154b and the control electrodes 124a and 124b. In this case, the data conductors 171, 172, 173b, and 175b may be disposed on the gate insulating layer 140 and may be electrically connected to the semiconductors 154a and 154b through contact holes (not shown) that are formed in the gate insulating layer 140. have. Alternatively, the data conductors 171, 172, 173b, and 175b may be positioned under the semiconductors 154a and 154b to be in electrical contact with the semiconductors 154a and 154b thereon.

Next, a method of manufacturing the OLED display illustrated in FIGS. 2 and 3 will be described in detail with reference to FIGS. 4 through 15.

4, 6, 8, 10, 12, and 14 are layout views at an intermediate stage of the method of manufacturing the organic light emitting display device of FIGS. 2 and 3 according to an embodiment of the present invention, and FIG. 5. 4 is a cross-sectional view of the organic light emitting diode display of FIG. 4 taken along the line VV, and FIG. 7 is a cross-sectional view of the organic light emitting diode display of FIG. 6 taken along the line VII-VII, and FIG. 11 is a cross-sectional view of the display device taken along the line IX-IX, and FIG. 11 is a cross-sectional view of the organic light emitting display device of FIG. 10 taken along the line XI-XI, and FIG. 13 is a XIII of the organic light emitting display device of FIG. FIG. 15 is a cross-sectional view taken along the line -XIII, and FIG. 15 is a cross-sectional view taken along the line XV-XV of the organic light emitting diode display of FIG. 14.

4 and 5, a plurality of gate lines 121 and sustain electrodes 127 including a first control electrode 124a and an end portion 129 made of an aluminum alloy are disposed on the substrate 110. A gate conductor including a plurality of second control electrodes 124b is formed.

Next, as shown in FIGS. 6 and 7, three layers of the gate insulating layer 140, the intrinsic amorphous silicon layer, and the impurity amorphous silicon layer are successively stacked, and the impurity amorphous silicon layer and the intrinsic amorphous silicon layer are photo-etched to form a plurality of layers. The first and second impurity semiconductors 164a and 164b and the first and second semiconductors 154a and 154b are formed.

Next, a plurality of data lines 171 including a first input electrode 173a and an end portion 179 made of an aluminum alloy, a driving voltage line 172 including a second input electrode 173b, and a plurality of firsts And second output electrodes 175a and 175b.

8 and 9, the resistive contact members 163a, 165a, 163b, by removing portions of the impurity semiconductor 164 that are not covered by the data conductors 171, 172, 175a, and 175b. While completing 165b, portions of the first and second semiconductors 154a and 154b beneath it are exposed.

Next, as shown in FIGS. 10 and 11, the protective film 180 is laminated on the entire surface of the substrate by a method such as chemical vapor deposition.

Next, a photosensitive organic layer is coated on the passivation layer 180 by spin coating, and the photosensitive organic layer is exposed and developed to form a photosensitive layer pattern 361 having openings 365, 367, 368, and 369. .

12 and 13, the protective layer 180 and the gate insulating layer 140 are etched using the photoresist pattern 361 as a mask to form a plurality of contact holes 181, 182, 185a, and 185b. do. At this time, the photoresist pattern formed on the contact holes 181 and 182 for connecting the external circuit is slitted to make the thickness thinner.

Next, the photosensitive film pattern 361 is cured and a part of it is used as a partition wall.

As described above, in the present embodiment, after forming the passivation layer 180, the photosensitive pattern 361 used as the partition wall is formed and the passivation layer 180 is patterned using the mask. Accordingly, the photolithography process for forming the contact hole in the passivation layer 180 can be omitted, thereby reducing the number of masks and simplifying the process.

Meanwhile, in the present exemplary embodiment, the passivation layer 180 and the photosensitive pattern 361 are formed by separate processes. However, when the passivation layer 180 is made of an organic material, the passivation layer 180 and the photosensitive pattern 361 may be formed in one organic process. It can be formed with an insulating film. In this case, after the photosensitive organic layer is coated on the data conductors 171, 172, 175a and 175b, the exposed semiconductors 154a and 154b, and the gate insulating layer 140, an opening may be formed by one exposure and development. have. Therefore, the deposition and etching of the passivation layer 180 may be omitted, thereby simplifying the process.

Next, ITO is deposited on the photoresist pattern 361 and the substrate, and then patterned to form a plurality of pixel electrodes 191, a plurality of connection members 85, and a plurality of contact assistants 81 and 82.

Subsequently, a shadow mask (not shown) having an opening of a predetermined shape is disposed on the substrate and an insulating material such as silicon nitride is deposited. In this case, the opening of the shadow mask is disposed on the opening 367 exposing the connection member 85 to form the insulating member 40 only in the opening 367.

14 and 15, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365. The light emitting member 370 may be formed by a solution process or deposition such as an inkjet printing method, among which the inkjet head (not shown) is moved to the opening 365. An ink jet printing method in which the solution is added is preferable, in which case a drying step is followed after the formation of each layer. Meanwhile, as described above, since the boundary of the opening 365 in which the light emitting member 370 is defined is defined outside the pixel electrode 191, the pixel electrode 191 is formed when the light emitting member 370 is formed by an inkjet printing method. ), The light emitting member 370 may be formed to be uniform and in close contact with each other, thereby increasing light emission efficiency.

Next, as shown in FIGS. 2 and 3, a common electrode 270 is formed on the photosensitive pattern 361 and the light emitting member 370.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

As described above, the lower layer is etched using the photosensitive pattern used as the barrier as a mask, thereby reducing the number of masks and simplifying the process. In addition, by removing the passivation layer under the pixel electrode, light loss may be reduced during back emission.

Claims (35)

Board, A first signal line formed on the substrate, A second signal line crossing the first signal line, A plurality of thin film transistors formed on the substrate and having an electrical connection relationship with the first signal line and the second signal line; A protective film formed on the thin film transistor, A photosensitive member formed on the passivation layer and having a first opening; A first electrode connected to one of the thin film transistors and separated from the photosensitive member; A light emitting member formed on the first electrode and defined by the photosensitive member, and A second electrode formed on the light emitting member; One of the plurality of thin film transistors is in side contact with the first electrode. In claim 1, The first electrode has an area smaller than that of the first opening. In claim 1, An edge of the first electrode is disposed in the first opening and in contact with the light emitting member. 4. The method of claim 3, The first electrode is positioned 1 to 5 μm from the boundary of the first opening. delete In claim 1, The first electrode is in contact with the substrate. In claim 1, The light emitting member is at least partially overlapping the thin film transistor. In claim 1, The organic light emitting display device in which the passivation layer is removed from the first opening. In claim 1, The portion of the photosensitive member surrounding the first opening is used as a partition wall. In claim 1, The photosensitive member further includes a second opening, The second opening further includes a connection member separated from the photosensitive member and connecting the plurality of thin film transistors to each other. OLED display. In claim 10, The organic light emitting diode display further comprises an insulating member covering the connection member. In claim 10, The organic light emitting display device in which the passivation layer is removed from the second opening. In claim 10, The connection member is in contact with the substrate. In claim 1, The passivation layer and the photosensitive member are organic layers including a single layer. The method of claim 14, The organic light emitting diode display may include a photocurable organic material. Forming a plurality of signal lines and a plurality of thin film transistors on the substrate, Forming a passivation layer on the signal line and the thin film transistor; Forming a photosensitive member having a plurality of openings on the passivation layer, Removing the protective film using the photosensitive member as a mask; Stacking a conductive layer on the entire surface including the photosensitive member and etching the photo to form a first electrode; Forming a light emitting member in a part of the opening; Forming a second electrode on the light emitting member and the photosensitive member Method of manufacturing an organic light emitting display device comprising a. 17. The method of claim 16, And removing a portion of the passivation layer to expose a portion of the thin film transistor. 17. The method of claim 16, And forming an insulating member in a portion of the opening after the forming of the first electrode. The method of claim 18, The forming of the insulating member may include using a shadow mask. 17. The method of claim 16, The forming of the first electrode may include forming the first electrode such that the first electrode and the photosensitive member do not overlap each other. 17. The method of claim 16, And curing the photosensitive member after removing the protective layer. 17. The method of claim 16, And forming the passivation layer and forming the photosensitive member as a single organic layer. 17. The method of claim 16, And removing the passivation layer to slit a portion of the photosensitive member. Forming a plurality of signal lines and a plurality of thin film transistors on the substrate, Stacking an organic insulating layer on the signal line and the thin film transistor, Removing a portion of the organic insulating layer to form an opening exposing a portion of the thin film transistor; Stacking a conductive layer on the entire surface including the organic insulating layer and etching the photo to form a first electrode; Forming an insulating member on a part of the opening, Forming a light emitting member in a portion of the opening; and Forming a second electrode on the light emitting member and the organic insulating layer Method of manufacturing an organic light emitting display device comprising a. delete The method of claim 24, The forming of the insulating member may include using a shadow mask. The method of claim 24, The forming of the first electrode may include forming the first electrode such that the first electrode and the organic insulating layer do not overlap each other. Board, A first signal line formed on the substrate, A second signal line crossing the first signal line, A plurality of thin film transistors formed on the substrate and having an electrical connection relationship with the first signal line and the second signal line; A protective film formed on the thin film transistor, A partition wall formed on the passivation layer and having a first opening; A first electrode at least partially in contact with the substrate in the first opening; A light emitting member formed on the first electrode and defined by the partition wall, and A second electrode formed on the light emitting member An organic light emitting display device comprising a. The method of claim 28, The first electrode has an area smaller than that of the first opening. The method of claim 29, The first electrode is positioned 1 to 5 μm from the boundary of the first opening. The method of claim 28, One of the thin film transistors is in side contact with the first electrode. The method of claim 28, The organic light emitting display device in which the passivation layer is removed from the first opening. The method of claim 28, The partition further includes a second opening, The second opening further includes a connection member in contact with the substrate and connecting the plurality of thin film transistors to each other. OLED display. 34. The method of claim 33, The organic light emitting diode display further comprises an insulating member covering the connection member. Board, A first signal line formed on the substrate, A second signal line crossing the first signal line, A switching thin film transistor formed on the substrate and connected to the first signal line and the second signal line; A driving thin film transistor connected to the switching thin film transistor, A driving voltage line connected to the driving thin film transistor, A protective film formed on the entire surface of the substrate, A photosensitive member formed on the passivation layer and having a first opening; A first electrode connected to the driving thin film transistor and separated from the photosensitive member; A light emitting member formed on the first electrode and defined by the photosensitive member, and A second electrode formed on the light emitting member; The first electrode is in contact with the substrate.

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