KR101143008B1 - Organic light emitting diode display - Google Patents

Abstract

The present invention provides a substrate, an auxiliary electrode formed on the substrate, a first signal line formed on the substrate, a second signal line intersecting the first signal line, a driving voltage line formed on the substrate and transferring a first voltage; A first thin film transistor connected to the first signal line and the second signal line, a second thin film transistor connected to the first thin film transistor and the driving voltage line, a first electrode connected to the second thin film transistor, and A second electrode that receives a second voltage and faces the first electrode, and a light emitting member formed between the first electrode and the second electrode

The auxiliary electrode may include an organic light emitting display device electrically connected to one of the driving voltage line and the second electrode.

Drive voltage, common voltage, crosstalk, auxiliary electrode

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an organic light-

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment of the present invention.

3 and 4 are cross-sectional views of the organic light emitting diode display of FIG. 2 taken along lines III-III and IV-IV.

5, 8, 11, and 14 are layout views at an intermediate stage of a method of manufacturing the organic light emitting display device of FIGS. 2 to 4 according to an embodiment of the present invention;

6 and 7 are cross-sectional views of the organic light emitting diode display of FIG. 5 taken along lines VI-VI and VII-VII.

9 and 10 are cross-sectional views of the organic light emitting diode display of FIG. 8 taken along lines IX-IX and X-X.

12 and 13 are cross-sectional views of the organic light emitting diode display of FIG. 11 taken along lines XII-XII and XIII-XIII.

15 and 16 are cross-sectional views of the organic light emitting diode display of FIG. 14 taken along lines XV-XV and XVI-XVI.

17 and 18 illustrate embodiments in which the organic light emitting diode display illustrated in FIGS. 2 to 4 is partially modified.

19 is a layout view of an organic light emitting diode display according to another exemplary embodiment.

20 is a cross-sectional view of the organic light emitting diode display of FIG. 19 taken along the line XX-XX.

21 is a layout view of an organic light emitting diode display according to yet another exemplary embodiment.

FIG. 22 is a cross-sectional view of the organic light emitting diode display of FIG. 21 taken along the line XXII-XXII.

<Description of the symbols for the main parts of the drawings>

110: insulating substrate 111: auxiliary electrode

121: blocking layer 121: gate line

122: voltage auxiliary line 123: protrusion of voltage auxiliary line

124a: first control electrode 124b: second control electrode

127: sustain electrode 129: end of gate line

140: gate insulating film 154a: first semiconductor

154b: second semiconductor 171: data line

172: driving voltage lines 85, 86: connecting member

173a: first input electrode 173b: second input electrode

175a: first output electrode 175b: second output electrode

179: end of data line 81, 82: contact auxiliary member

181, 182, 184, 185a, 185b, 186, 188, 366: contact hole

191: pixel electrode 270: common electrode

361: partition 370: organic light emitting member

Qs: switching transistor Qd: driving transistor

LD: organic light emitting diamond Vss: common voltage

Cst: retaining capacitor

The present invention relates to an organic light emitting display device and a method of manufacturing the same.

Recently, there is a demand for weight reduction and thinning of a monitor or a television, and according to such a demand, a cathode ray tube (CRT) has been replaced by a liquid crystal display (LCD).

However, the liquid crystal display device requires not only a separate backlight as a light emitting device, but also has many problems in response speed and viewing angle.

Recently, as a display device capable of overcoming such a problem, an organic light emitting diode display (OLED display) has attracted attention.

The organic light emitting diode display includes two electrodes and a light emitting layer positioned therebetween, and electrons injected from one electrode and holes injected from another electrode are combined in the light emitting layer to form excitons. The excitons emit light while releasing energy.

The organic light emitting diode display is not only advantageous in terms of power consumption because it does not need a separate light source, and also has excellent response speed, viewing angle, and contrast ratio.

The organic light emitting diode display may be classified into a passive matrix OLED display of a simple matrix type and an active matrix OLED display of an active matrix type according to a driving method.

The simple matrix method selects and drives a line corresponding to a specific pixel by arranging the anode line and the cathode line to cross each other. On the other hand, the active matrix method is a driving method in which a driving thin film transistor and a storage capacitor are connected to an anode electrode of each organic light emitting cell to maintain a voltage by a capacitor capacitance. In this case, the amount of current of the driving thin film transistor which supplies the current for light emission to the organic light emitting cell is controlled by the data voltage applied through the switching transistor, and the gate line and the data line of the switching transistor are arranged to cross each other. Is connected to. Therefore, when the switching transistor is turned on by the signal transmitted through the gate line, the data voltage is applied to the gate voltage of the driving thin film transistor through the data line, and current flows through the organic light emitting cell to emit light. Here, the source of the driving thin film transistors disposed in each cell is commonly connected to the driving voltage line, and a driving voltage is transmitted to the source. The amount of current flowing through the driving thin film transistor is determined by the driving voltage and the data voltage difference. Accordingly, the gray scale may be determined by variously adjusting the current amount of the driving thin film transistor by applying the data voltage according to the gray scale. Such an organic light emitting cell is provided for each pixel to implement a color screen.

However, as the organic light emitting diode display becomes larger, the driving voltage is not uniformly transmitted and decreases. When the driving voltage decreases, even when the same data voltage is applied, the amount of current flowing through the driving thin film transistor is changed so that the image is displayed with a gray level darker than the intended gray level. That is, when a bright color is displayed on a specific pixel, a voltage drop is severely generated with respect to the driving voltage transmitted through the signal line. As a result, even if a desired data voltage is applied, the current flowing through the driving thin film transistor is severely reduced. Therefore, the pixels connected to the signal line in which the voltage drop occurs display an image with a gray level darker than the intended gray level so that cross talk occurs, and cross talk occurs more severely as the pixels displaying bright colors increase. Done. The same applies to the common voltage as well as the driving voltage.

Therefore, the technical problem to be achieved by the present invention is to solve such a problem is to minimize the voltage drop of the driving voltage or the common voltage.

An organic light emitting diode display according to an exemplary embodiment of the present invention includes a substrate, an auxiliary electrode formed on the substrate, a first signal line formed on the substrate, a second signal line intersecting the first signal line, and formed on the substrate. And a driving voltage line transferring a first voltage, a first thin film transistor connected to the first signal line and the second signal line, a second thin film transistor connected to the first thin film transistor and the driving voltage line, and the second thin film transistor. A first electrode connected to the thin film transistor, a second electrode receiving a second voltage and facing the first electrode, and a light emitting member formed between the first electrode and the second electrode, wherein the auxiliary electrode The electrode is electrically connected to any one of the driving voltage line and the second electrode.

In addition, the auxiliary electrode may be positioned on a layer different from the driving voltage line and the second electrode.

In addition, an organic light emitting diode display according to an exemplary embodiment of the present invention may include a substrate, a first auxiliary electrode formed on the substrate and transmitting a driving voltage, a first signal line formed on the substrate, and an intersection with the first signal line. A second signal line, a driving voltage line connected to the first auxiliary electrode and transmitting a driving voltage, and having a structure different from that of the first auxiliary electrode, a first thin film transistor connected to the first signal line and the second signal line; A second thin film transistor connected to a first thin film transistor and the driving voltage line, a first electrode connected to the second thin film transistor, a second electrode facing the first electrode, and the first electrode and the second electrode It includes a light emitting member formed between the electrodes.

In addition, the first auxiliary electrode and the driving voltage line may be positioned on different layers.

The display device may further include a blocking layer formed on the first auxiliary electrode.

In addition, the first auxiliary electrode may cover the entire surface of the substrate.

In addition, the first auxiliary electrode may include a transparent or translucent conductor.

In addition, the first auxiliary electrode may not overlap the first signal line.

In addition, the first auxiliary electrode may have a transmissive part positioned at a portion corresponding to the light emitting member.

In addition, the first auxiliary electrode may include one selected from aluminum (Al), copper (Cu), silver (Ag), and an alloy thereof.

The display device may further include a second auxiliary electrode spaced apart from the first auxiliary electrode, and the second auxiliary electrode may be connected to the second electrode.

In addition, the first auxiliary electrode and the second auxiliary electrode may be formed on the same layer.

In addition, the same voltage as that of the second electrode may be applied to the second auxiliary electrode.

The display device may further include a voltage auxiliary line formed on the same layer as the first signal line or the second signal line and connected to the second electrode and the second auxiliary electrode.

In addition, the second electrode may include a transparent or translucent conductor.

In addition, the second electrode may include ITO or IZO.

In addition, the light emitting member may further include a partition wall.

In addition, an organic light emitting diode display according to an exemplary embodiment includes a substrate, an auxiliary electrode formed on the substrate, and transmitting a common voltage, a first signal line formed on the substrate, and a second crossing the first signal line. A first thin film transistor connected to a signal line, the first signal line and the second signal line, a second thin film transistor connected to the first thin film transistor, a first electrode connected to the second thin film transistor, and the first thin film transistor A second electrode facing the electrode and connected to the auxiliary electrode, and a light emitting member formed between the first electrode and the second electrode.

The display device may further include a voltage auxiliary line formed on the same layer as the first signal line or the second signal line and connected to the second electrode.

In addition, the second electrode may include a transparent or translucent conductor.

In addition, the second electrode may include ITO or IZO.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, area, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Example 1

First, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172, and a plurality of pixels connected to them and arranged in a substantially matrix form. do.

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a plurality of data lines 171 for transmitting a data signal, and a plurality of driving voltage lines for transmitting a driving voltage. and a driving voltage line 172. The gate lines 121 extend substantially in the row direction, and are substantially parallel to each other, and the data line 171 and the driving voltage line 172 extend substantially in the column direction, and are substantially parallel to each other.

Each pixel PX includes a switching transistor Qs, a driving transistor Qd, a storage capacitor Cst, and an organic light emitting diode OLED. It includes.

The switching transistor Qs has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the gate line 121, and the input terminal is connected to the data line 171. ) And the output terminal is connected to the driving transistor Qd. The switching transistor Qs transfers the data signal applied to the data line 171 to the driving transistor Qd in response to the scan signal applied to the gate line 121.

The driving transistor Qd also has a control terminal, an input terminal and an output terminal, the control terminal being connected to the switching transistor Qs, the input terminal being connected to the driving voltage line 172, and the output terminal being the organic light emitting diode. It is connected to (LD). The driving transistor Qd flows an output current I _LD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving transistor Qd. The capacitor Cst charges the data signal applied to the control terminal of the driving transistor Qd and maintains it even after the switching transistor Qs is turned off.

The organic light emitting diode LD has an anode connected to the output terminal of the driving transistor Qd and a cathode connected to the common voltage Vss. The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current I _LD of the driving transistor Qd.

The switching transistor Qs and the driving transistor Qd are n-channel field effect transistors (FETs). However, at least one of the switching transistor Qs and the driving transistor Qd may be a p-channel field effect transistor. In addition, the connection relationship between the transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

Next, the detailed structure of the organic light emitting diode display illustrated in FIG. 1 will be described in detail with reference to FIGS. 2 to 4.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment, and FIGS. 3 and 4 are cross-sectional views of the organic light emitting diode display of FIG. 2 taken along lines III-III and IV-IV.

The auxiliary electrode 111 is formed on the insulating substrate 110 made of transparent glass or plastic. The auxiliary electrode 111 has a planar shape covering the entire surface of the mother glass. The auxiliary electrode 111 may be made of a transparent or translucent conductor such as ITO or IZO in the case of bottom emission, and an aluminum-based metal such as aluminum (Al) or an aluminum alloy in the case of top emission. It may be made of a low resistance conductor of a silver-based metal such as (Ag) or a silver alloy, or a copper-based metal such as copper (Cu) or a copper alloy.

A blocking layer 112 made of silicon oxide (SiO _x ) or silicon nitride (SiN _x ) is formed on the auxiliary electrode 111.

A plurality of gate conductors including a plurality of gate lines 121 including a first control electrode 124a and a plurality of second control electrodes 124b are disposed on the blocking layer 112. Formed.

The gate line 121 transmits the gate signal and extends mainly in the horizontal direction. Each gate line 121 includes a wide end portion 129 for connection with another layer or an external driving circuit, and the first control electrode 124a extends upward from the gate line 121. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The second control electrode 124b is separated from the gate line 121 and includes a storage electrode 127 extending downward and briefly changing to the right and extending upward.

Gate conductors 121 and 124b include aluminum-based metals such as aluminum and aluminum alloys, silver-based metals such as silver and silver alloys, copper-based metals such as copper and copper alloys, molybdenum-based metals such as molybdenum and molybdenum alloys, chromium, tantalum and titanium It can be made. However, they may have a multilayer structure including two conductive films (not shown) having different physical properties.

Side surfaces of the gate conductors 121 and 124b are inclined with respect to the substrate 110 surface, and the inclination angle thereof is preferably about 30 mm to about 80 mm.

A gate insulating layer 140 made of silicon nitride or silicon oxide is formed on the gate conductors 121 and 124b. The gate insulating layer 140 and the blocking layer 112 have contact holes 147 exposing the auxiliary electrode 111.

On the gate insulating layer 140, a plurality of first semiconductors 154a and a plurality of second semiconductors 154b made of hydrogenated amorphous silicon (amorphous silicon is abbreviated as a-Si), polycrystalline silicon, or the like. ) Is formed. The first semiconductor 154a is positioned on the first control electrode 124a, and the second semiconductor 154b is positioned on the second control electrode 124b.

A plurality of pairs of first ohmic contacts 163a and 165a and a plurality of pairs of second ohmic contacts 163b and 165b are formed on the first and second semiconductors 154a and 154b, respectively. The ohmic contacts 163a, 163b, 165a, and 165b have an island shape, and may be made of a material such as n + hydrogenated amorphous silicon in which n-type impurities such as phosphorus (P) are heavily doped, or made of silicide. have.

The plurality of data lines 171, the plurality of driving voltage lines 172, and the plurality of first and second output electrodes 175a are disposed on the ohmic contacts 163a, 163b, 165a, and 165b and the gate insulating layer 140. , A plurality of data conductors including 175b are formed.

The data line 171 transmits a data signal and extends mainly in the vertical direction and crosses the gate line 121. Each data line 171 has a wide end portion 179 for connection of a plurality of first input electrodes 173a extending toward the first control electrode 124a with another layer or an external driving circuit. It includes. When a data driving circuit (not shown) generating a data signal is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The driving voltage line 172 transfers a driving voltage and mainly extends in the vertical direction to cross the gate line 121. Each driving voltage line 172 includes a plurality of second input electrodes 173b extending toward the second control electrode 124b. The driving voltage line 172 overlaps the sustain electrode 127.

The driving voltage line 172 is connected to the auxiliary electrode 111 through the contact hole 147. The same voltage is applied to the driving voltage line 172 and the auxiliary electrode 111. As such, the driving voltage line 172 is connected to the auxiliary electrode 111 covering the entire surface of the substrate, and thus the driving voltages applied to the plurality of pixels are substantially the same. In addition, since the auxiliary electrode 111 has a sheet resistance, even if a voltage drop occurs, the magnitude of the voltage applied to each pixel does not vary much. Therefore, a uniform driving voltage can be transmitted in the plurality of pixels, and crosstalk resulting from the difference in brightness between the pixels can be greatly reduced.

The first and second output electrodes 175a and 175b are separated from each other and also separated from the data line 171 and the driving voltage line 172. The first input electrode 173a and the first output electrode 175a face each other with respect to the first control electrode 124a, and the second input electrode 173b and the second output electrode 175b are the second control electrode. Facing each other around 124b.

The data conductors 171, 172, 175a, and 175b are preferably made of a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof, and include a refractory metal film (not shown) and a low resistance conductive film (not shown). It may have a multi-layer structure consisting of a).

Like the gate conductors 121 and 124b, the data conductors 171, 172, 175a, and 175b also preferably have their side surfaces inclined at an inclination angle of about 30 to 80 degrees with respect to the surface of the substrate 110.

A passivation layer 180 is formed on the data conductors 171, 172, 175a and 175b, the exposed semiconductors 154a and 154b, and the gate insulating layer 140.

The passivation layer 180 is made of an inorganic insulator or an organic insulator and has a flat surface. Examples of the inorganic insulator include silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ), and examples of the organic insulator include polyacryl compounds. The passivation layer 180 may have a double layer structure of an inorganic layer and an organic layer.

The passivation layer 180 has a plurality of contact holes 182, 185a, and 185b exposing the end portion 179 of the data line 171 and the first and second output electrodes 175b, respectively. In the passivation layer 180 and the gate insulating layer 140, a plurality of contact holes 181 and 184 exposing the end portion 129 of the gate line 121 and the second input electrode 124b are formed.

A plurality of pixel electrodes 191, a plurality of connecting members 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191 is physically and electrically connected to the second output electrode 175b through the contact hole 185b.

The connecting member 85 is connected to the second control electrode 124b and the first output electrode 175a through the contact holes 184 and 185a.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portions 129 and 179 of the gate line 121 and the data line 171 and the external device.

A partition 361 is formed on the passivation layer 180. The partition 361 defines an opening 365 by surrounding the edge of the pixel electrode 191 like a bank. The partition 361 may be made of an organic insulator such as acrylic resin, polyimide resin, or an inorganic insulator such as silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ). It may be, and may be two or more layers. The partition 361 may also be made of a photosensitive material containing black pigment, in which case the partition 361 serves as a light blocking member and the forming process is simple.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361.

The organic light emitting member 370 may have a multilayer structure including an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer (not shown) for emitting light.

The light emitting layer is made of an organic material or a mixture of organic and inorganic materials that uniquely emits light of any one of primary colors such as three primary colors of red, green, and blue, and a polyfluorene derivative (poly) Paraphenylenevinylene (poly) paraphenylenevinylene derivatives, polyphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole, polythiophene derivatives or polymer materials thereof Perylene-based dyes, coumarin-based dyes, rhodamine-based dyes, rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene ( Compounds doped with tetraphenylbutadiene, nile red, coumarin, quinacridone, and the like may be included. The organic light emitting diode display displays a desired image by using a spatial sum of primary color light emitted from the emission layer.

The auxiliary layer includes an electron transport layer (not shown) and a hole transport layer (not shown) for balancing electrons and holes, and an electron injection layer for enhancing the injection of electrons and holes ( electron injecting layer (not shown) and hole injecting layer (hole injecting layer) (not shown) and the like, and may include one or two or more layers selected from them. The hole transport layer and the hole injection layer are made of a material having a work function that is about the middle of the pixel electrode 191 and the light emitting layer, and the electron transport layer and the electron injection layer have a work function that is about the middle of the common electrode 270 and the light emitting layer. Is made with. For example, a mixture of polyethylenedioxythiophene and polystyrenesulfonic acid (poly- (3,4-ethylenedioxythiophene: polystyrenesulfonate, PEDOT: PSS)) may be used as the hole transport layer or the hole injection layer.

The common electrode 270 is formed on the organic light emitting member 370. The common electrode 270 is formed on the entire surface of the substrate, and pairs with the pixel electrode 191 to send a current to the organic light emitting member 370.

In the organic light emitting diode display, the first control electrode 124a connected to the gate line 121, the first input electrode 173a and the first output electrode 175a connected to the data line 171 may be formed. 1 together with the semiconductor 154a, a switching TFT Qs is formed, and a channel of the switching TFT Qs is formed between the first input electrode 173a and the first output electrode 175a. 1 is formed in the semiconductor 154a. The second control electrode 124b connected to the first output electrode 175a, the second input electrode 173b connected to the driving voltage line 172, and the second output electrode connected to the pixel electrode 191 ( 175b forms a driving TFT Qd together with the second semiconductor 154b, and a channel of the driving TFT Qd is formed between the second input electrode 173b and the second output electrode 175b. It is formed in the second semiconductor 154b.

In addition, although only one switching thin film transistor and one driving thin film transistor are shown in the present embodiment, at least one thin film transistor and a plurality of wirings for driving the same are further included, so that the organic light emitting diode LD and It is possible to prevent or compensate the deterioration of the driving transistor Qd to prevent the lifespan of the organic light emitting diode display from being shortened.

The pixel electrode 191, the organic light emitting member 370, and the common electrode 270 form an organic light emitting diode LD, the pixel electrode 191 is an anode, and the common electrode 270 is a cathode. Alternatively, the pixel electrode 191 becomes a cathode and the common electrode 270 becomes an anode. In addition, the storage electrode 127 and the driving voltage line 172 overlapping each other form a storage capacitor Cst.

On the other hand, when the semiconductors 154a and 154b are polycrystalline silicon, an intrinsic region (not shown) facing the control electrodes 124a and 124b and an impurity region (extrinsic region) located at both sides thereof are not shown. Not included). The impurity region is electrically connected to the input electrodes 173a and 173b and the output electrodes 175a and 175b, and the ohmic contacts 163a, 163b, 165a and 165b may be omitted.

In addition, the control electrodes 124a and 124b may be disposed on the semiconductors 154a and 154b, and the gate insulating layer 140 may be positioned between the semiconductors 154a and 154b and the control electrodes 124a and 124b. In this case, the data conductors 171, 172, 173b, and 175b may be disposed on the gate insulating layer 140 and may be electrically connected to the semiconductors 154a and 154b through contact holes (not shown) bored in the gate insulating layer 140. . Alternatively, the data conductors 171, 172, 173b, and 175b may be positioned under the semiconductors 154a and 154b to be in electrical contact with the semiconductors 154a and 154b thereon.

Next, a method of manufacturing the organic light emitting diode display illustrated in FIGS. 2 to 4 will be described in detail with reference to FIGS. 5 to 16.

5, 8, 11, and 14 are layout views at an intermediate stage of the method of manufacturing the organic light emitting display device of FIGS. 2 to 4 according to an embodiment of the present invention, and FIGS. 6 and 7 are FIGS. 9 is a cross-sectional view of an organic light emitting diode display taken along a line VI-VI and VII-VII. FIG. 9 and FIG. 10 are a cross-sectional view of the organic light emitting diode display of FIG. 8 taken along a line IX-IX and XX. 12 and 13 are cross-sectional views of the organic light emitting diode display of FIG. 11 taken along lines XII-XII and XIII-XIII, and FIGS. 15 and 16 are XV-XV of the organic light emitting diode display of FIG. 14. Sectional drawing cut along the line and XVI-XVI line.

5 to 7, the auxiliary electrode 111 made of a conductor such as ITO or IZO is formed on the substrate 110. The auxiliary electrode 111 may arrange a shadow mask on the substrate 110 and deposit a conductor, or deposit a conductor on the entire surface of the substrate 110, and then end the end of the substrate 110 with a perishot. It is carried out by removing the conductor formed in the.

Subsequently, a blocking layer 112 made of silicon nitride is formed on the auxiliary electrode 111.

Next, a plurality of second control electrodes including a plurality of gate lines 121 and a sustain electrode 127 including a first control electrode 124a and an end portion 129 made of an aluminum alloy on the blocking layer 112. A gate conductor including 124b is formed.

Next, as shown in FIGS. 8 to 10, three layers of the gate insulating layer 140, the intrinsic amorphous silicon layer, and the impurity amorphous silicon layer are successively stacked, and the impurity amorphous silicon layer and the intrinsic amorphous silicon layer are photo-etched to form a plurality of layers. First and second impurity semiconductors (not shown) and first and second semiconductors 154a and 154b are formed.

Subsequently, the gate insulating layer 140 and the blocking layer 112 are etched to form contact holes 147.

Next, a plurality of data lines 171 including a first input electrode 173a and an end portion 179 made of an aluminum alloy, a driving voltage line 172 including a second input electrode 173b, and a plurality of firsts And second output electrodes 175a and 175b. In this case, the driving voltage line 172 is connected to the auxiliary electrode 111 through the contact hole 147.

Subsequently, the resistive contact members 163a, 165a, 163b, and 165b are completed by removing the exposed impurity semiconductor portions that are not covered by the data conductors 171, 172, 175a, and 175b, while the first and the first ones thereunder. Part of the semiconductors 154a and 154b is exposed.

Subsequently, the passivation layer 180 is laminated and photo-etched by chemical vapor deposition or printing to form a plurality of contact holes 181, 182, 184, 185a and 185b. The contact holes 181, 182, 184, 185a, and 185b include the end portion 129 of the gate line 121, the end portion 179 of the data line 171, the second control electrode 124b, and the first output electrode. 175a and the second output electrode 175b are exposed.

11 to 13, a plurality of pixel electrodes 191, a plurality of connection members 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

Next, as shown in FIGS. 14 to 16, the photosensitive organic insulating layer is coated by spin coating, exposed to light, and developed to form a partition 361 having an opening 365 on the pixel electrode 191.

Subsequently, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365 disposed on the pixel electrode 191. The light emitting member 370 may be formed by a solution process or evaporation, such as an inkjet printing method, among which the inkjet head (not shown) is moved and the opening ( Inkjet printing method is preferred in which the solution is added dropwise to 365), followed by a drying step after the formation of each layer.

Next, as shown in FIGS. 2 to 4, the common electrode 270 is formed on the partition 361 and the light emitting member 370.

[Example 2]

This embodiment is a modification of the above-described first embodiment, shown in Figures 17 and 18, respectively.

17 and 18 are layout views partially modified to the organic light emitting diode display of FIG. 2.

Although the organic light emitting diode display of the first exemplary embodiment has been described with respect to the organic light emitting diode display in which the auxiliary electrode 111 is formed on the entire surface of the mother substrate, in FIG. 17, the gate line (not to overlap the gate line 121) It is formed only in the region except 121). As described above, the auxiliary electrode 111 and the gate line 121 are not overlapped with each other to prevent the auxiliary electrode 111 and the gate line 121 from being shorted.

In FIG. 18, the auxiliary electrode 111 is formed in a region excluding the light emitting region. Since the light emitting area is not covered by the auxiliary electrode 111 even in the case of the bottom emission, the auxiliary electrode 111 may be made of an opaque conductor. Therefore, even in the case of the bottom emission, the resistance may be reduced by forming the auxiliary electrode 111 using a low resistance conductor such as aluminum or an aluminum alloy, silver or silver alloy, copper or a copper alloy.

Other configurations are the same as those in the first embodiment.

[Example 3]

In the present exemplary embodiment, the organic light emitting diode display of the top emission type will be described with reference to FIGS. 19 and 20 along with FIG. 1. The content overlapping with the above-described embodiment is omitted.

19 is a layout view of an organic light emitting diode display according to an exemplary embodiment, and FIG. 20 is a cross-sectional view of the organic light emitting diode display of FIG. 19 taken along a line XX-XX.

The auxiliary electrode 111 is formed on the insulating substrate 110. The auxiliary electrode 111 is in a planar shape covering the entire surface of the mother substrate. The auxiliary electrode 111 may be made of a low resistance conductor of an aluminum-based metal such as aluminum or an aluminum alloy, a silver-based metal such as silver or a silver alloy, or a copper-based metal such as copper or a copper alloy.

The blocking layer 112 is formed on the auxiliary electrode 111.

The blocking layer 112 includes a plurality of gate lines 121 including a first control electrode 124a, a plurality of second control electrodes 124b, and a voltage auxiliary line 122 including a protrusion 123. A plurality of gate conductors are formed.

The voltage auxiliary line 122 transmits a common voltage and extends in parallel with the gate line 121. The protrusion 123 extends downward from each auxiliary electrode line 122.

The gate insulating layer 140 is formed on the gate conductors 121, 124b, and 122.

A plurality of first semiconductors 154a and a plurality of second semiconductors 154b are formed on the gate insulating layer 140. A plurality of pairs of first ohmic contacts 163a and 165a and a plurality of pairs of second ohmic contacts 163b and 165b are formed on the first semiconductor 154a and the second semiconductor 154b, respectively.

A plurality of data lines 171, a plurality of driving voltage lines 172, and a plurality of first and second output electrodes 175a and 175b are disposed on the ohmic contacts 163a, 163b, 165a, and 165b and the gate insulating layer 140. A plurality of data conductors are formed.

Unlike the above-described embodiment, the driving voltage line 172 is not connected to the auxiliary electrode 111.

Also, instead of the voltage auxiliary line 122 shown on the same layer as the gate line 121, a plurality of data lines 171, a plurality of driving voltage lines 172, and a plurality of first and second output electrodes 175a and 175b. ) And a voltage auxiliary line (not shown) may be formed on the same layer. In this case, the voltage auxiliary line may extend in a direction parallel to the data line 171.

A passivation layer 180 is formed on the data conductors 171, 172, 175a, and 175b, the exposed portions of the semiconductors 154a and 154b, and the gate insulating layer 140.

 The passivation layer 180 has a plurality of contact holes 182, 185a, and 185b exposing the end portion 179 of the data line 171 and the first and second output electrodes 175b, respectively. The passivation layer 180 and the gate insulating layer 140 each include a plurality of contact holes exposing the end portion 129 of the gate line 121, the second input electrode 124b, and the protrusion 123 of the voltage auxiliary line 122. 181, 184, and 186 are formed. In addition, a contact hole 188 exposing the auxiliary electrode 111 is formed in the passivation layer 180, the gate insulating layer 140, and the blocking layer 112.

A plurality of pixel electrodes 191, a plurality of connection members 85 and 86, and a plurality of contact auxiliary members 81 and 82 are formed on the passivation layer 180. These may be monolayers made of opaque conductors or bilayers made of ITO and opaque conductors. The opaque conductor may be aluminum or an aluminum alloy, gold (Au) having a high work function, platinum (Pt), nickel (Ni), copper (Cu), tungsten (W) or an alloy thereof.

The connecting member 85 is connected to the second control electrode 124b and the first output electrode 175a through the contact holes 184 and 185a.

The connecting member 86 is connected to the protrusion 123 and the auxiliary electrode 111 of the voltage auxiliary line 122 through the contact holes 186 and 188, respectively.

A partition 361 having an opening 365 and a contact hole 366 is formed on the passivation layer 180, and an organic light emitting member 370 is formed in the opening 365.

The common electrode 270 is formed on the entire surface of the substrate including the partition 361 and the organic light emitting member 370. The common electrode 270 is made of a transparent or semi-transparent conductive material that has good electron injection and does not affect the organic material. Such materials include ITO, IZO, monolayers containing aluminum (Al), silver (Ag), etc., formed in thin thicknesses of about 50 to 100 ?? or Ca-Ag, LiF-Al, Ca-Ba, Ca-Ag- It may be formed of multiple layers such as ITO. By including the common electrode 270 made of a transparent or translucent conductive material as described above, the entire surface of the substrate 110 in which the thin film transistor is formed may emit light.

The common electrode 270 is connected to the protrusion 123 of the voltage auxiliary line 122 through the contact hole 366 and the connection member 86. As a result, the common electrode 270, the protrusion 123 of the voltage auxiliary line 122, and the auxiliary electrode 111 are all connected.

As such, the common electrode 270, the protrusion 123 of the voltage auxiliary line 122, and the auxiliary electrode 111 are connected to each other, such that the common electrode 270 has a relatively large resistance for front emission. Also, the common voltage may be stably supplied to the common electrode 270 even when the gate electrode is made of. Accordingly, a uniform common voltage may be applied to the entire region of the common electrode 270 without causing a voltage drop, and crosstalk resulting from the difference in brightness between pixels may be reduced.

Example 4

This embodiment is a modification of the above-described embodiments 1 to 4, and will be described with reference to FIGS. 21 and 22 together with FIG. The content overlapping with the above-described embodiment is omitted.

FIG. 21 is a layout view of an organic light emitting diode display according to another exemplary embodiment. FIG. 22 is a cross-sectional view of the organic light emitting diode display of FIG. 21 taken along a line XXII-XXII.

The first auxiliary electrode 111a and the second auxiliary electrode 111b are formed on the insulating substrate 110. The first auxiliary electrode 111 a and the second auxiliary electrode 111 b have a planar shape formed at predetermined intervals. The first and second auxiliary electrodes 111a and 111b may be made of a low resistance conductor of an aluminum-based metal such as aluminum or an aluminum alloy, a silver-based metal such as silver or a silver alloy, or a copper-based metal such as copper or a copper alloy.

The blocking layer 112 is formed on the first and second auxiliary electrodes 111a and 111b.

The blocking layer 112 includes a plurality of gate lines 121 including a first control electrode 124a, a plurality of second control electrodes 124b, and a voltage auxiliary line 122 including a protrusion 123. A plurality of gate conductors are formed.

The gate insulating layer 140 is formed on the gate conductors 121, 124b, and 122.

The gate insulating layer 140 and the blocking layer 112 have a contact hole 147 exposing the first auxiliary electrode 111a.

A plurality of first semiconductors 154a and a plurality of second semiconductors 154b are formed on the gate insulating layer 140. A plurality of pairs of first ohmic contacts 163a and 165a and a plurality of pairs of second ohmic contacts 163b and 165b are formed on the first semiconductor 154a and the second semiconductor 154b, respectively.

A plurality of data lines 171, a plurality of driving voltage lines 172, and a plurality of first and second output electrodes 175a and 175b are disposed on the ohmic contacts 163a, 163b, 165a, and 165b and the gate insulating layer 140. A plurality of data conductors are formed. The driving voltage line 172 is connected to the first auxiliary electrode 111a through the contact hole 147.

A passivation layer 180 is formed on the data conductors 171, 172, 175a, and 175b, the exposed portions of the semiconductors 154a and 154b, and the gate insulating layer 140.

 The passivation layer 180 is formed with a plurality of contact holes 182, 185a, and 185b exposing the end portion 179 of the data line 171 and the first and second output electrodes 175b, respectively. The gate insulating layer 140 has a plurality of contact holes 181 and 184 exposing the end portion 129 of the gate line 121, the second input electrode 124b and the protrusion 123 of the voltage auxiliary line 122, respectively. 186 is formed. In addition, a contact hole 188 exposing the second auxiliary electrode 111b is formed in the passivation layer 180, the gate insulating layer 140, and the blocking layer 112.

A plurality of pixel electrodes 191, a plurality of connection members 85 and 86, and a plurality of contact auxiliary members 81 and 82 are formed on the passivation layer 180.

The connecting member 85 is connected to the second control electrode 124b and the first output electrode 175a through the contact holes 184 and 185a.

The second connection member 86 is connected to the protrusion 123 and the second auxiliary electrode 111b of the voltage auxiliary line 122 through the contact holes 186 and 188, respectively.

A partition 361 having an opening 365 and a contact hole 366 is formed on the passivation layer 180, and an organic light emitting member 370 is formed in the opening 365.

The common electrode 270 is formed on the entire surface of the substrate including the partition 361 and the organic light emitting member 370.

The common electrode 270 is connected to the protrusion 123 of the voltage auxiliary line 122 through the contact hole 366 and the connection member 86. As a result, all of the common electrode 270, the protrusion 123 of the voltage auxiliary line 122, and the second auxiliary electrode 111 b are connected to each other.

As described above, in the present exemplary embodiment, the first auxiliary electrode 111a and the second auxiliary electrode 111b are formed on the substrate 110, and the first auxiliary electrode 111a is connected to the driving voltage line 172. The second auxiliary electrode 111b is connected to the common electrode 270.

As such, the first and second auxiliary electrodes 111a and 111b are connected to the driving voltage line 172 and the common electrode 270, respectively, and a driving voltage is applied to the driving voltage line 172 and the first auxiliary electrode 111a. In addition, by applying a common voltage to the common electrode 270 and the second auxiliary electrode 111b, the driving voltage and the common voltage may be uniformly transmitted in all pixels. In addition, since the first and second auxiliary electrodes 111a and 111b have sheet resistance, the magnitude of the voltage applied to each pixel does not vary much even when a voltage drop occurs. Therefore, a uniform driving voltage and a common voltage can be delivered in the plurality of pixels, and crosstalk resulting from the difference in brightness between the pixels can be greatly reduced.

In the above-described embodiments, only the structure in which the first and second auxiliary electrodes and the driving voltage line or the common electrode are connected in the display area is illustrated, but may be connected in a portion other than the display area.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the present invention.

As described above, by providing the auxiliary electrode, a uniform driving voltage and a common voltage may be transmitted in the plurality of pixels, and crosstalk resulting from the difference in brightness between the pixels may be reduced.

Claims (21)

Board, An auxiliary electrode formed on the substrate, A first signal line formed on the substrate, A second signal line crossing the first signal line, A driving voltage line formed on the substrate and transferring a first voltage; A first thin film transistor connected to the first signal line and the second signal line, A second thin film transistor connected to the first thin film transistor and the driving voltage line; A first electrode connected to the second thin film transistor, A second electrode receiving a second voltage and facing the first electrode, and Light emitting member formed between the first electrode and the second electrode / RTI &gt; The auxiliary electrode is electrically connected to any one of the driving voltage line and the second electrode. OLED display. In claim 1, The auxiliary electrode is disposed on a layer different from the driving voltage line and the second electrode. Board, A first auxiliary electrode formed on the substrate and transmitting a driving voltage; A first signal line formed on the substrate, A second signal line crossing the first signal line, A driving voltage line connected to the first auxiliary electrode and transferring a driving voltage and having a structure different from that of the first auxiliary electrode, A first thin film transistor connected to the first signal line and the second signal line, A second thin film transistor connected to the first thin film transistor and the driving voltage line; A first electrode connected to the second thin film transistor, A second electrode facing the first electrode, and Light emitting member formed between the first electrode and the second electrode An organic light emitting display device comprising a. 4. The method of claim 3, The first auxiliary electrode and the driving voltage line are on different layers. 4. The method of claim 3, The organic light emitting display device further comprises a blocking layer formed on the first auxiliary electrode. 4. The method of claim 3, The first auxiliary electrode covers the entire surface of the substrate. 4. The method of claim 3, The first auxiliary electrode includes a transparent or translucent conductor. 4. The method of claim 3, The first auxiliary electrode does not overlap the first signal line. 4. The method of claim 3, The first auxiliary electrode has a transmissive part disposed at a portion corresponding to the light emitting member. The method of claim 9, The first auxiliary electrode includes one selected from aluminum (Al), copper (Cu), silver (Ag), and an alloy thereof. 4. The method of claim 3, Further comprising a second auxiliary electrode spaced apart from the first auxiliary electrode, The second auxiliary electrode is connected to the second electrode OLED display. 12. The method of claim 11, The first auxiliary electrode and the second auxiliary electrode are formed on the same layer. 12. The method of claim 11, The same voltage as that of the second electrode is applied to the second auxiliary electrode. OLED display. 12. The method of claim 11, And a voltage auxiliary line formed on the same layer as the first signal line or the second signal line and connected to the second electrode and the second auxiliary electrode. 12. The method of claim 11, The second electrode includes a transparent or translucent conductor. 16. The method of claim 15, The second electrode includes ITO or IZO. In claim 1, And a partition wall surrounding the light emitting member. Board, An auxiliary electrode formed on the substrate and transferring a common voltage; A first signal line formed on the substrate, A second signal line crossing the first signal line, A first thin film transistor connected to the first signal line and the second signal line, A second thin film transistor connected to the first thin film transistor, A first electrode connected to the second thin film transistor, A second electrode facing the first electrode and connected to the auxiliary electrode, and Light emitting member formed between the first electrode and the second electrode An organic light emitting display device comprising a. The method of claim 18, And a voltage auxiliary line formed on the same layer as the first signal line or the second signal line and connected to the second electrode. The method of claim 18, The second electrode includes a transparent or translucent conductor. The method of claim 20, The second electrode includes ITO or IZO.

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