KR20080061167A - Organic light emitting device - Google Patents

Abstract

An organic light emitting device is provided to improve carrier mobility and stability by forming a channel of a driving thin film transistor on a microcrystalline or polycrystalline semiconductor. First and second signal lines are formed on a substrate. A switching thin film transistor(Qs) is connected to the first and second signal lines and includes a first semiconductor. An etch stopper(147) is formed on a second semiconductor. A driving input electrode(173b) and a driving output electrode(175b) are overlapped with the etch stopper and face each other with respect to the etch stopper. A driving control electrode(124b) is connected to the switching thin film transistor and overlapped with the etch stopper between the driving input electrode and the driving output electrode. A first electrode is connected to the driving output electrode. A second electrode faces the first electrode. A light emitting member(370) is formed between the first and second electrodes. A portion where the etch stopper and the driving output electrode and the driving input electrode are overlapped has a rotary symmetric structure with respect to a horizontal center line or a vertical center line.

Description

Organic light emitting display device {ORGANIC LIGHT EMITTING DEVICE}

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment of the present invention.

3 is an enlarged layout view of a driving thin film transistor in the OLED display of FIG. 2.

4 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along a line IV-IV.

5 to 11 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting display device of FIGS. 2 to 4 according to an embodiment of the present invention.

12 is a layout view of an organic light emitting diode display according to another exemplary embodiment of the present invention.

<Description of Drawing>

110: insulating substrate 121: gate line

124a: switching control electrode 124b: drive control electrode

127: sustain electrode 129: end of gate line

140: gate insulating film 147: etch stop film

154a: switching semiconductor 154b: driving semiconductor

163a, 163b, 165a, 165b: ohmic contact member

171: data line 172: driving voltage line

173a: switching input electrode 173b: drive input electrode

175a: switching output electrode 175b: driving output electrode

179: end of data line 81, 82: contact auxiliary member

85: connecting member

181, 182, 184, 185a, 185b: contact hole

191: pixel electrode 270: common electrode

361: partition 370: organic light emitting member

Qs: switching transistor Qd: driving transistor

LD: organic light emitting diode Vss: common voltage

Cst: retaining capacitor

The present invention relates to an organic light emitting display device and a manufacturing method thereof.

Recently, there is a demand for weight reduction and thinning of a monitor or a television, and according to such a demand, a cathode ray tube (CRT) has been replaced by a liquid crystal display (LCD).

However, the liquid crystal display device requires not only a separate backlight as a light emitting device, but also has many problems in response speed and viewing angle.

Recently, as a display device capable of overcoming such a problem, an organic light emitting diode display (OLED display) has attracted attention.

The organic light emitting diode display includes two electrodes and a light emitting layer interposed therebetween, and electrons injected from one electrode and holes injected from another electrode are combined in the light emitting layer to form excitons. The excitons emit light while releasing energy.

The OLED display is self-luminous and does not require a separate light source, which is advantageous in terms of power consumption, and also has excellent response speed, viewing angle, and contrast ratio.

The organic light emitting diode display may be classified into a passive matrix OLED display of a simple matrix type and an active matrix OLED display of an active matrix type according to a driving method.

Among these, an active matrix type organic light emitting display device is a driving thin film transistor that is connected to a signal line to control a data voltage and a data voltage received therefrom as a gate voltage to drive current through the light emitting device. And driving thin film transistors.

However, the characteristics required for the switching thin film transistor and the driving thin film transistor are different in order for the organic light emitting diode display to exhibit optimal characteristics. The switching thin film transistor, while requiring high on / off characteristic current ratio (I _on / I _off), the driving TFT has a high mobility (mobility) and stability (stability) to flow a sufficient current to the light emitting element is required .

When the off current increases in the switching thin film transistor, the data voltage transmitted to the driving thin film transistor decreases, thereby causing cross talk. When the driving thin film transistor has low mobility and stability, the amount of current flowing through the light emitting device is reduced. The amount of light emitted can be reduced, resulting in image sticking and shortening of lifespan.

Accordingly, the technical problem to be solved by the present invention is to solve the above problems and to simultaneously meet the characteristics required for the switching thin film transistor and the driving thin film transistor, thereby improving the characteristics of the organic light emitting display device.

An organic light emitting diode display according to an exemplary embodiment of the present invention, a first and second signal lines formed on the substrate, a switching thin film transistor connected to the first and second signal lines and including a first semiconductor, and a second A semiconductor, an etch stop layer formed on the second semiconductor, the etch stop layer overlapping the etch stop layer, the driving input electrode and the drive output electrode facing each other with respect to the etch stop layer, and connected to the switching thin film transistor. A driving control electrode overlapping the etch stop layer between the driving input electrode and the driving output electrode, a first electrode connected to the driving output electrode, a second electrode facing the first electrode, and the first electrode and the And a light emitting member formed between the second electrodes, wherein the etch stop layer and the driving output electrode and the driving member are driven. The overlapping portion of the input electrode has a rotationally symmetrical structure with respect to the horizontal center line or the vertical center line.

The overlapping portion of the etch stop layer, the driving output electrode and the driving input electrode preferably has a donut shape, and the overlapping portion of the etch stop layer and the driving output electrode and the portion of the etch stop layer and the driving input electrode overlap each other. desirable.

The overlapping portion of the etch stop layer, the driving output electrode, and the driving input electrode preferably has a lying 'S' shape, and the driving output electrode preferably includes two portions surrounded by the curved driving input electrode.

The first semiconductor and the second semiconductor may have different crystal states, and the first semiconductor may include an amorphous semiconductor, and the second semiconductor may include a microcrystalline or polycrystalline semiconductor.

Switching thin film transistors

A switching control electrode connected to the first signal line, a gate insulating film formed on the switching control electrode, a switching input electrode connected to the second signal line, and a switching output electrode facing the switching input electrode and connected to the driving control electrode. It may further include.

The gate insulating film covers the driving input electrode, the driving output electrode, and the etch stop layer, and the switching control electrode, the driving input electrode, and the driving output electrode may be formed of the same layer, and the driving control electrode, the switching input electrode, and the switching output electrode are the same. It may consist of layers.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

First, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172, and a plurality of pixels connected to them and arranged in a substantially matrix form. do.

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a plurality of data lines 171 for transmitting a data signal, and a plurality of driving voltage lines for transmitting a driving voltage. and a driving voltage line 172. The gate lines 121 extend substantially in the row direction, and are substantially parallel to each other, and the data line 171 and the driving voltage line 172 extend substantially in the column direction, and are substantially parallel to each other. The driving voltage line 172 may extend in the row direction and be parallel to the gate line 121.

Each pixel PX includes a switching transistor Qs, a driving transistor Qd, a storage capacitor Cst, and an organic light emitting diode OLED. LD).

The switching transistor Qs has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the gate line 121, and the input terminal is a data line 171. ) And the output terminal is connected to the driving transistor Qd. The switching transistor Qs transfers the data signal applied to the data line 171 to the driving transistor Qd in response to the scan signal applied to the gate line 121.

The driving transistor Qd also has a control terminal, an input terminal and an output terminal, the control terminal being connected to the switching transistor Qs, the input terminal being connected to the driving voltage line 172, and the output terminal being the organic light emitting diode. It is connected to (LD). The driving transistor Qd flows an output current I _LD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving transistor Qd. The capacitor Cst charges the data signal applied to the control terminal of the driving transistor Qd and maintains it even after the switching transistor Qs is turned off.

The organic light emitting diode LD has an anode connected to the output terminal of the driving transistor Qd and a cathode connected to the common voltage Vss. The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current I _LD of the driving transistor Qd.

The switching transistor Qs and the driving transistor Qd are n-channel field effect transistors (FETs). However, at least one of the switching transistor Qs and the driving transistor Qd may be a p-channel field effect transistor. In addition, the connection relationship between the transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

Hereinafter, various embodiments of the organic light emitting diode display illustrated in FIG. 1 will be described with reference to the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Example 1

Next, detailed structures of the organic light emitting diode display illustrated in FIG. 1 will be described with reference to FIGS. 2 and 4 together with FIG. 1.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment of the present invention, FIG. 3 is an enlarged plan view of a driving thin film transistor in the organic light emitting diode display of FIG. 2, and FIG. 4 is an organic light emitting display of FIG. 2. Sectional view of the device taken along line IV-IV.

A driving semiconductor 154b made of a microcrystalline semiconductor or a polycrystalline semiconductor is formed on an insulating substrate 110 made of transparent glass or plastic.

An etch stopper 147 made of an insulating material such as silicon oxide or silicon nitride is formed on the center of the driving semiconductor 154b. The etch stop layer 147 is a donut shape of a disc having an opening formed in the center thereof.

A driving voltage line including a gate line 121 including a switching control electrode 124a and an end portion 129 and a driving input electrode 173b on the substrate 110, the driving semiconductor 154b, and the etch stop layer 147. 172 and drive output electrode 175b are formed.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes a wide end portion 129 for connection with another layer or an external driving circuit, and the switching control electrode 124a extends upward from the gate line 121. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The driving voltage line 172 transfers a driving voltage and mainly extends in a horizontal direction to be parallel to the gate line 121. Each driving voltage line 172 includes a plurality of driving input electrodes 173b. At this time, the driving input electrode 173b also has a donut shape of a disc with an opening formed in the center thereof. The driving input electrode 173b has an inner boundary on the etch stop layer 147 and an outer boundary on the substrate 110. The driving input electrode 173b has a driving semiconductor 154b and an etch stop layer ( Cover the periphery of 147).

The driving output electrode 175b is separated from the gate line 121 and the driving voltage line 172 so as to have a disc shape and positioned within an inner boundary of the driving input electrode 173b. The boundary line of the driving output electrode 175b is positioned above the etch stop layer 147 to cover the center portion of the driving semiconductor 154b and the inner portion of the etch stop layer 147.

The gate line 121, the driving voltage line 172, and the driving output electrode 175b may be formed of aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper (Cu), or copper alloy. Copper-based metal, molybdenum-based metals such as molybdenum (Mo) and molybdenum alloys, and may be made of chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties.

Side surfaces of the gate line 121, the driving voltage line 172, and the driving output electrode 175b are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 degrees to about 80 degrees.

A plurality of pairs of ohmic contacts 163b and 165b are formed between the driving semiconductor 154b and the driving voltage line 172 and between the driving semiconductor 154b and the driving output electrode 175b, respectively. In this case, the ohmic contacts 163b and 165b have substantially the same planar shape as the driving voltage line 172 and the driving output electrode 175b. The ohmic contacts 163b and 165b may be made of a material of fine crystalline silicon or polycrystalline silicon doped with a high concentration of n-type impurities such as phosphorus (P).

In addition, an auxiliary member 161 having a planar shape substantially the same as the gate line 121 is formed under the gate line 121.

A gate insulating layer 140 made of an insulating material such as silicon nitride or silicon oxide is formed on the gate line 121, the driving voltage line 172, the driving output electrode 175b, and the driving semiconductor 154b.

A plurality of switching semiconductors 154a made of hydrogenated amorphous silicon are formed on the gate insulating layer 140. The switching semiconductor 154a overlaps the switching control electrode 124a.

A data line 171 including a switching input electrode 173a and an end portion 179, a switching output electrode 175a, and a driving control electrode 124b are formed on the switching semiconductor 154a and the gate insulating layer 140. .

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121 and the driving voltage line 172. Each data line 171 has a wide end portion 179 for connection with a plurality of switching input electrodes 173a extending toward the switching control electrode 124a and another layer or an external driving circuit. Include. When a data driving circuit (not shown) generating a data signal is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The switching output electrode 175a is separated from the data line 171. The switching input electrode 173a and the switching output electrode 175a partially overlap the switching semiconductor 154a and face each other with respect to the switching semiconductor 154a.

The drive control electrode 124b is island-shaped and includes a storage capacitor 127 extending in the horizontal direction. The driving control electrode 124b overlapping the driving semiconductor 154b has a donut shape having an opening in the center thereof, an inner boundary line is positioned above the driving output electrode 175b, and an outer boundary line is positioned above the driving input electrode 173b. Located. Therefore, the driving control electrode 124b is positioned between the driving input electrode 173b and the driving output electrode 175b to overlap the driving semiconductor 154b, and also the driving input electrode 173b and the driving output electrode 175b. Some overlap

The sides of the data line 171 including the switching input electrode 173a and the end portion 179, the switching output electrode 175a and the driving control electrode 124b are inclined with respect to the surface of the substrate 110, and the inclination angle thereof is about Preferably from 30 degrees to about 80 degrees.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. The ohmic contacts 163a and 165a may be made of amorphous silicon in which n-type impurities such as phosphorus (P) are heavily doped.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. The ohmic contacts 163a and 165a have an island shape, and may be made of n + hydrogenated amorphous silicon in which impurities such as phosphorus (P) are highly doped.

The passivation layer 180 is formed on the data line 171, the switching output electrode 175a, and the driving control electrode 124b.

The passivation layer 180 is formed with a plurality of contact holes 185a, 184, and 182 exposing the switching output electrode 175a, the driving control electrode 124b, and the end portion 179 of the data line 171. The contact holes 181 and 185b exposing the end portion 129 of the gate line 121 and the driving output electrode 175b are formed in the 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191, a connection member 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191 is electrically connected to the driving output electrode 175b through the contact hole 185b.

The connecting member 85 is connected to the switching output electrode 175a and the drive control electrode 124b through the contact holes 185a and 184.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portions 129 and 179 of the gate line 121 and the data line 171 and the external device.

The pixel electrode 191, the connection member 85, and the contact assistants 81 and 82 may be made of a transparent conductor such as ITO or IZO, and in the case of top emission, aluminum or an aluminum alloy, high work It may be made of an opaque conductor such as gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W) or alloys thereof having a work function.

A partition 361 is formed on the pixel electrode 191, the connection member 85, and the contact auxiliary members 81 and 82. The partition 361 defines an opening 365 by surrounding the edge of the pixel electrode 191 like a bank. The partition 361 may be made of an organic insulator such as acrylic resin, polyimide resin, or an inorganic insulator such as silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ). It may be, and may be two or more layers. The partition 361 may also be made of a photosensitive material containing black pigment, in which case the partition 361 serves as a light blocking member and the forming process is simple.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361.

The organic light emitting member 370 may have a multilayer structure including an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer (not shown) for emitting light.

The light emitting layer may be made of a polymer material or a low molecular material or a mixture thereof that uniquely emits light of any one of primary colors such as three primary colors of red, green, and blue. Polymeric materials include, for example, polyfluorene derivatives, (poly) paraphenylenevinylene derivatives, polyphenylene derivatives, polyvinylcarbazole, polythiophene Derivatives and the like. In addition, low molecular weight materials include anthracene such as 9,10-diphenylanthracene, butadiene such as tetraphenylbutadiene, tetratracene, and distyrylarylene. ) Derivatives, benzazole derivatives and carbazole derivatives. Or the above-mentioned high molecular material or low molecular material as a host material, for example, xanthene, perylene, coumarin, rhodamine, rubrene, dish Aminomethylenepyran compound, thiopyran compound, (thia) pyrilium compound, periflanthene derivative, indenoperylene derivative, carbostyryl Dopant such as a compound, nile red, and quinacridone may be used to increase luminous efficiency. The organic light emitting diode display displays a desired image by using a spatial sum of primary color light emitted from the emission layer. The auxiliary layer includes an electron transport layer (not shown) and a hole transport layer (not shown) for balancing electrons and holes, and an electron injection layer for enhancing the injection of electrons and holes ( electron injecting layer (not shown) and hole injecting layer (hole injecting layer) (not shown) and the like, and may include one or two or more layers selected from them. The hole transport layer and the hole injection layer are made of a material having a work function that is about the middle of the pixel electrode 191 and the light emitting layer, and the electron transport layer and the electron injection layer have a work function that is about the middle of the common electrode 270 and the light emitting layer. Is made with. For example, the hole transport layer or the hole injection layer may include diamines, MTDATA ([4,4 ', 4 "-tris (3-methylphenyl) phenylamino] triphenylamine), TPD (N, N'-diphenyl-N, N'-di ( 3-methylphenyl) -1,1'-biphenyl-4,4'-diamine), 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane (1,1-bis (4-di-p -tolylaminophenyl) cyclohexane), N, N, N ', N'-tetra (2-naphthyl) -4,4 "-diamino-p-terphenyl (N, N, N', N'-tetra (2 -naphthyl) -4,4 "-diamino-p-terphenyl), 4,4 ', 4" -tris [(3-methylphenyl) phenylamino] triphenylamine (4,4', 4 "-tris [(3 -methylphenyl) phenylamino] triphenylamine), polypyrrole, polyaniline, a mixture of polyethylenedioxythiophene and polystyrenesulfonic acid (poly- (3,4-ethylenedioxythiophene: polystyrenesulfonate, PEDOT: PSS) can be used.

The organic light emitting member 370 may implement a desired color for each pixel by arranging light emitting layers emitting colors such as red, green, and blue colors for each pixel, and vertically or horizontally arrange the red, green, and blue light emitting layers on one pixel. By forming a white light emitting layer to form a color filter for implementing the colors of red, green and blue on the bottom or top of the white light emitting layer may implement a desired color. In this case, the color filter may be positioned under the light emitting layer in the case of the bottom emission structure, and may be positioned above the light emitting layer in the case of the top emission structure.

In addition to the three-color structure including the red, green, and blue pixels, the four-color structure including the red, green, blue, and white pixels may be arranged in the form of a stripe or a checkerboard to improve luminance.

The common electrode 270 is formed on the organic light emitting member 370. The common electrode 270 is formed on the entire surface of the substrate, and pairs with the pixel electrode 191 to send a current to the organic light emitting member 370.

In the organic light emitting diode display, the switching control electrode 124a connected to the gate line 121, the switching input electrode 173a connected to the data line 171, and the switching output electrode 175a are connected to the switching semiconductor 154a. ) And a switching TFT Qs, and a channel of the switching TFT Qs is formed in the switching semiconductor 154a between the switching input electrode 173a and the switching output electrode 175a. do. The driving control electrode 124b connected to the switching output electrode 175a, the driving input electrode 173b connected to the driving voltage line 172, and the driving output electrode 175b connected to the pixel electrode 191 are driven. A driving TFT Qd is formed together with the semiconductor 154b, and a channel of the driving TFT Qd is formed in the driving semiconductor 154b between the driving input electrode 173b and the driving output electrode 175b. do.

As described above, the switching semiconductor 154a is made of an amorphous semiconductor, and the driving semiconductor 155b is made of a fine crystalline or polycrystalline semiconductor. That is, the channel of the switching thin film transistor is formed in the amorphous semiconductor, and the channel of the driving thin film transistor is formed in the fine crystalline or polycrystalline semiconductor.

As described above, the channels of the switching thin film transistor and the driving thin film transistor are formed in semiconductors having different crystalline properties, thereby satisfying the characteristics required for each thin film transistor.

By forming the channel of the driving thin film transistor in the microcrystalline or polycrystalline semiconductor, the carrier thin film may have high carrier mobility and stability, thereby increasing the amount of current flowing through the light emitting device, thereby increasing luminance. In addition, by forming the channel of the driving thin film transistor in the microcrystalline or polycrystalline semiconductor, image sticking and lifespan are prevented by preventing the Vth shift caused by the continuous application of positive voltage during driving. Shortening can be prevented.

On the other hand, since the switching thin film transistor plays a role of controlling the data voltage, on / off characteristics are important, and in particular, it is important to reduce the off current. However, since the microcrystalline or polycrystalline semiconductor has a large off current, the data voltage passing through the switching thin film transistor may decrease and crosstalk may occur. Therefore, in the present invention, the switching thin film transistor is formed of an amorphous semiconductor having a small off current, thereby preventing a decrease in data voltage and reducing cross talk.

Although only one switching thin film transistor and one driving thin film transistor are shown in the present embodiment, at least one thin film transistor and a plurality of wirings for driving the same are further included, so that the organic light emitting diode LD and the driving transistor may be driven even for a long time. It is possible to prevent or compensate for deterioration of the Qd so as to shorten the lifespan of the organic light emitting display device.

The pixel electrode 191, the organic light emitting member 370, and the common electrode 270 form an organic light emitting diode LD, and the pixel electrode 191 is an anode and the common electrode 270 is a cathode. Alternatively, the pixel electrode 191 becomes a cathode and the common electrode 270 becomes an anode. In addition, the storage electrode 127 and the driving voltage line 172 overlapping each other form a storage capacitor Cst.

Next, a method of manufacturing the OLED display illustrated in FIGS. 2 to 4 will be described in detail with reference to FIGS. 5 to 11.

5 through 11 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 2 through 4 according to an exemplary embodiment of the present invention.

As shown in FIG. 5, amorphous silicon is deposited on the substrate 110, and then the amorphous silicon layer is crystallized by a crystallization process. Next, the crystalline silicon layer is patterned by a photolithography process using a mask to form the driving semiconductor 154b.

Subsequently, as shown in FIG. 6, silicon nitride or silicon oxide is stacked and patterned on the substrate 110 to form a donut etch stop layer 147 on the driving semiconductor 154b. Subsequently, in order to improve characteristics of the thin film transistor, the driving semiconductor 154b exposed by performing H2 plasma may be surface treated.

Next, as shown in FIG. 7, a gate line including a switching control electrode 124a and an end portion 129 by stacking a metal layer and an amorphous silicon layer or a fine crystalline silicon layer doped with impurities, and photoetching the metal layer. An auxiliary member 161 and ohmic contacts 163b and 165b by forming a driving voltage line 172 including a driving input electrode 173b and a driving output electrode 175b and etching the exposed silicon layer. do.

Subsequently, as shown in FIG. 8, the gate insulating layer 140, the intrinsic amorphous silicon layer, and the impurity amorphous silicon layer are disposed on the substrate 110, the gate line 121, the driving voltage line 172, and the driving output electrode 175b. After sequentially stacking, the silicon layer is photo-etched to form the switching semiconductor 154a and the ohmic contact layer 164a.

Next, as illustrated in FIG. 9, a metal layer is stacked and photo-etched on the gate insulating layer 140, the switching semiconductor 154a, and the ohmic contact layer 164a to include a switching input electrode 173a and an end portion 179. The data line 171, the switching output electrode 175a, and the driving control electrode 124b are formed.

Next, the ohmic contact layer 164a is etched using the data line 171 and the switching output electrode 175a as a mask to complete the pair of ohmic contacts 163a and 165a.

Next, as shown in FIG. 10, the protective layer 180 is stacked on the entire surface of the substrate and photo-etched to form a plurality of contact holes 181, 182, 184, 185a, and 185b.

Next, as shown in FIG. 11, after the ITO is deposited on the passivation layer 180, photo etching is performed to form the plurality of pixel electrodes 191, the connection member 85, and the plurality of contact assistants 81 and 82. .

Next, as shown in FIGS. 2 to 4, after the photosensitive organic film is coated on the pixel electrode 191, the connection member 85, the plurality of contact auxiliary members 81 and 82, and the passivation layer 180, exposure and development are performed. As a result, a partition 361 having a plurality of openings 365 is formed.

Subsequently, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365.

Finally, the common electrode 270 is formed on the partition 361 and the light emitting member 370.

In the organic light emitting diode display and the method of manufacturing the same, the driving semiconductor 154b may be first stacked and crystallized to uniformly crystallize the driving semiconductor 154b. In addition, the etching stop layer 147 may be disposed to prevent the driving semiconductor 154b from being damaged when the resistive contact members 163b and 165b are etched, and may be formed to have a uniform thickness of the driving semiconductor 154b. . Through this, the characteristics of the thin film transistor may be uniformly improved.

Also, in the driving thin film transistor, the driving input electrode 173b, the driving output electrode 175b, and the etch stop layer 147 have a circular or donut shape, and the drive input electrode 173b and the etch stop layer 147 overlap each other. The portion to be positioned is outside the portion where the driving output electrode 175b and the etch stop layer 147 overlap. In this case, a portion where the etch stop layer 147, the driving input electrode 173b and the drive output electrode 175b overlap, forms a donut or a round band, and is symmetrically rotated with respect to the horizontal center line or the vertical center line of the etch stop layer 147. Has a structure. Thus, even when the driving input electrode 173b, the driving output electrode 175b, and the etch stop layer 147 are misaligned with each other in the manufacturing process, the etch stop layer 147, the driving input electrode 173b, and the driving output electrode 175b are not aligned. The overlapping portions are compensated with each other in the vertical direction or the left and right directions and are kept constant. Therefore, even if misalignment occurs in the manufacturing process, the characteristics of the driving thin film transistor can be secured uniformly, thereby improving the characteristics of the display device.

 Example 2

Hereinafter, another structure of the OLED display illustrated in FIG. 1 will be described in detail with reference to FIG. 12.

12 is a layout view illustrating a structure of an organic light emitting diode display according to another exemplary embodiment of the present invention.

The stacked structure of the organic light emitting diode display according to the present exemplary embodiment is substantially the same as that of FIGS. 2 to 4.

A driving semiconductor 154b made of a polycrystalline semiconductor is formed on the insulating substrate 110, and an etch stop layer 147 is formed thereon. Subsequently, a plurality of gate lines 121 including the switching control electrode 124a and the end portion 129, a driving voltage line 172 including the driving input electrode 173b, and a driving output electrode 175b are formed thereon. A plurality of pairs of ohmic contacts 163b and 165b below the gate line 121, between the driving semiconductor 154b and the driving voltage line 172, and between the driving semiconductor 154b and the driving output electrode 175b, respectively. An auxiliary member 161 is formed. A gate insulating layer 140 is formed on the gate line 121, the driving voltage line 172, and the driving output electrode 175b, and a switching semiconductor 154a overlapping the switching control electrode 124a is formed thereon. . A data line 171 including a switching input electrode 173a and an end portion 179, a switching output electrode 175a, and a driving control electrode 124b are formed on the switching semiconductor 154a and the gate insulating layer 140. A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. A passivation layer 180 is formed on the data line 171, the switching output electrode 175a, and the drive control electrode 124b, and the switching output electrode 175a, the drive control electrode 124b, and the data line are formed on the passivation layer 180. A plurality of contact holes 185a, 184, and 182 exposing the end portion 179 of 171 are formed, and the passivation layer 180 and the gate insulating layer 140 have an end portion 129 of the gate line 121. A plurality of contact holes 181 and 185b exposing the drive output electrode 175b are formed. A plurality of pixel electrodes 191, a connection member 85, and a plurality of contact auxiliary members 81 and 82 are formed on the passivation layer 180, and a partition 361 having an opening 365 is formed thereon. have. An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361, and a common electrode 270 is formed on the partition 361 and the organic light emitting member 370. have.

However, unlike the previous embodiment, the etch stop layer 147 and the drive input electrode 173b have a lying 'S' shape in which two half moon portions are connected, and the drive input electrode 173b has the etch stop layer 147. The driving output electrode 175b is separated into two portions 175b1 and 175b2 and overlaps with an inner portion of the etch stop layer 147. The driving control electrode 124b overlaps the driving input electrode 173b and the driving output electrodes 175b1 and 175b2 adjacent to each other and the etch stop layer 147 therebetween.

Also in this embodiment, the driving input electrodes 173b, the driving output electrodes 175b1 and 175b2, and the etch stop layer 147 have a rotationally symmetrical structure with respect to their horizontal center lines or vertical center lines. Similarly, even if misalignment occurs in the manufacturing process, the operating characteristics of the driving thin film transistor can be secured uniformly.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

As described above, in the present invention, a part of the driving output electrode and the driving input electrode overlapping the etch stop layer has a rotationally symmetrical structure with respect to the horizontal center line or the vertical center line, so that even if misalignment occurs, the characteristics of the driving thin film transistor are uniform. In this way, the characteristics of the display device can be improved.

Claims (11)

Board, First and second signal lines formed on the substrate; A switching thin film transistor connected to the first and second signal lines and including a first semiconductor, A second semiconductor, an etch stop layer formed on the second semiconductor, an etch stop layer overlapping the etch stop layer, and respectively connected to the driving input electrode and the drive output electrode facing the etch stop layer, and the switching thin film transistor. A driving control electrode overlapping the etch stop layer between the driving input electrode and the driving output electrode; A first electrode connected to the driving output electrode, A second electrode facing the first electrode, and Light emitting member formed between the first electrode and the second electrode Including; The overlapping portion of the etch stop layer, the driving output electrode and the driving input electrode has a rotationally symmetrical structure with respect to a horizontal center line or a vertical center line. In claim 1, The overlapping portion of the etch stop layer, the driving output electrode, and the driving input electrode has a donut shape. In claim 2, An organic light emitting display device is disposed in a portion overlapping the etch stop layer and the driving output electrode and a portion in which the etch stop layer and the driving input electrode overlap. In claim 1, The overlapping portion of the etch stop layer, the driving output electrode, and the driving input electrode may have a 'S' shape lying down. In claim 4, The driving output electrode includes two parts surrounded by the curved driving input electrode. In claim 1, The organic light emitting diode display of which the first semiconductor and the second semiconductor have different crystal states. In claim 6, The first semiconductor includes an amorphous semiconductor, and the second semiconductor includes a microcrystalline or polycrystalline semiconductor. In claim 7, The switching thin film transistor A switching control electrode connected to the first signal line, A gate insulating film formed on the switching control electrode, A switching input electrode connected to the second signal line, and A switching output electrode facing the switching input electrode and connected to the driving control electrode An organic light emitting display device further comprising. In claim 8, The gate insulating layer covers the driving input electrode, the driving output electrode, and the etch stop layer. In claim 9, The switching control electrode, the driving input electrode and the driving output electrode are formed of the same layer. In claim 10, And the driving control electrode, the switching input electrode, and the switching output electrode are formed of the same layer.

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