KR20080055247A - Method for manufacturing of organic light emitting diode display - Google Patents

Abstract

A method for fabricating an organic light emitting device is provided to minimize damage by hydrogen fluoride by using aluminum as a metal interconnection. A semiconductor is formed on a substrate. A first conductive layer is stacked on the substrate and the semiconductor, and a photolithography process is performed by using a photoresist layer as a mask to form an input electrode(173b) and an output electrode(175b). While the photoresist layer exists, the substrate is cleaned by using hydrogen fluoride. The photoresist layer is eliminated. A gate insulation layer(140) is formed on the input electrode and the output electrode by a low temperature CVD method. A second conductive layer is stacked on the gate insulation layer, and a photolithography process is performed to form a control electrode. The process for forming the semiconductor can include the following steps. An amorphous semiconductor is formed. The amorphous semiconductor is crystallized by a solid phase crystallization method.

Description

Method for manufacturing an organic light emitting display device {METHOD FOR MANUFACTURING OF ORGANIC LIGHT EMITTING DIODE DISPLAY}

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment.

3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along line III-III.

4 through 12 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 2 and 3 according to an exemplary embodiment of the present invention.

13 is a layout view of an organic light emitting diode display according to another exemplary embodiment.

14 is a cross-sectional view of the organic light emitting diode display of FIG. 13 taken along the line XIV-XIV.

15 to 21 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 13 and 14 according to an exemplary embodiment of the present invention.

22 is a layout view of an organic light emitting diode display according to another exemplary embodiment of the present invention.

FIG. 23 is a cross-sectional view of the organic light emitting diode display of FIG. 22 taken along a line XXIII-XXIII.

24 to 31 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 22 and 23 according to an exemplary embodiment of the present invention.

<Description of Drawing>

110: insulating substrate 121: gate line

124a: switching control electrode 124b: drive control electrode

127: sustain electrode 129: end of gate line

140 and 142: gate insulating film 154a: switching semiconductor

154b: driving semiconductors 163a, 163b, 165a, and 165b: ohmic contacts

171: data line 172: driving voltage line

173a: switching input electrode 173b: drive input electrode

175a: switching output electrode 175b: driving output electrode

179: end of data line 81, 82: contact auxiliary member

85: connecting member

181, 182, 184, 185a, 185b: contact hole

191: pixel electrode 270: common electrode

361: partition 370: organic light emitting member

Qs: switching transistor Qd: driving transistor

LD: organic light emitting diamond Vss: common voltage

Cst: retaining capacitor

The present invention relates to a method of manufacturing an organic light emitting display device.

Recently, there is a demand for weight reduction and thinning of a monitor or a television, and according to such a demand, a cathode ray tube (CRT) has been replaced by a liquid crystal display (LCD).

However, the liquid crystal display device requires not only a separate backlight as a light emitting device, but also has many problems in response speed and viewing angle.

Recently, as a display device capable of overcoming such a problem, an organic light emitting diode display (OLED display) has attracted attention.

The organic light emitting diode display includes two electrodes and a light emitting layer interposed therebetween, and electrons injected from one electrode and holes injected from another electrode are combined in the light emitting layer to form excitons. The excitons emit light while releasing energy.

The OLED display is self-luminous and does not require a separate light source, which is advantageous in terms of power consumption, and also has excellent response speed, viewing angle, and contrast ratio.

The organic light emitting diode display may be classified into a passive matrix OLED display of a simple matrix type and an active matrix OLED display of an active matrix type according to a driving method.

Among these, an active matrix type organic light emitting display device is a driving thin film transistor that is connected to a signal line to control a data voltage and a data voltage received therefrom as a gate voltage to drive current through the light emitting device. And driving thin film transistors.

However, in the process of manufacturing the organic light emitting display, a hydrogen fluoride (HF) cleaning process is performed to improve characteristics of the thin film transistor. In other words, the hydrogen fluoride (HF) cleaning process performed after the etching of n + hydrogenated amorphous silicon removes organic matter and particles from the channel portion and forms a reliable channel by passivation with fluorine (F). This is to optimize the interface characteristics of the channel portion.

At this time, the source electrode or the drain electrode should not be damaged by the hydrogen fluoride (HF) during the hydrogen fluoride (HF) cleaning process.

However, when aluminum (Al) is used as the metal wiring, aluminum is damaged by hydrogen fluoride (HF), and a problem such as disconnection occurs in a subsequent process.

Therefore, the technical problem to be achieved by the present invention is to provide a method for minimizing damage caused by hydrogen fluoride (HF) to solve this problem.

According to an embodiment of the present invention, a method of manufacturing an organic light emitting display device may include forming a semiconductor on a substrate, stacking a first conductive layer on the substrate and the semiconductor, and etching the photoresist with a photoresist as a mask. Forming, cleaning the substrate with hydrogen fluoride (HF) in the presence of the photoresist film, removing the photoresist film, a low temperature chemical vapor deposition (CVD) method on the input electrode and the output electrode. Forming a control electrode by laminating and photolithography a second conductive layer on the gate insulating layer.

The first conductive layer may be formed of a lower layer made of molybdenum (Mo) -based metal and an upper layer made of aluminum (Al).

The forming of the semiconductor may include forming an amorphous semiconductor and crystallizing the amorphous semiconductor by solid phase crystallization.

In another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, including forming an amorphous semiconductor on a substrate, crystallizing the amorphous semiconductor by solid phase crystallization, and converting the crystallized semiconductor into nitrogen ( N ₂ ) plasma treatment with gas, stacking a first conductive layer on the substrate and the semiconductor and etching the photo to form an input electrode and an output electrode, cleaning the substrate with hydrogen fluoride (HF), Forming a gate insulating film on the input electrode and the output electrode, and forming a control electrode by stacking and photo-etching a second conductive layer on the gate insulating film.

The first conductive layer may be made of an aluminum alloy.

In another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, including forming a semiconductor on a substrate, stacking a first conductive layer on the substrate and the semiconductor, and etching a photosensitive film with a mask to input and output Forming an electrode, reflowing the photoresist, cleaning the substrate with hydrogen fluoride (HF) in the presence of the reflowed photoresist, removing the photoresist, the input electrode and the output Forming a gate insulating film on the electrode, and forming a control electrode by laminating and photo-etching the second conductive layer on the gate insulating film.

The first conductive layer may be formed of a lower film made of molybdenum-based metal, an intermediate film made of aluminum or aluminum alloy, and an upper film made of molybdenum-based metal.

The forming of the semiconductor may include forming an amorphous semiconductor and crystallizing the amorphous semiconductor by solid phase crystallization.

In another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device. Forming an electrode, a driving voltage line and a driving output electrode, cleaning the substrate with hydrogen fluoride (HF) in the presence of the photosensitive film, removing the photosensitive film, the switching control electrode, the driving voltage line and the Forming a gate insulating film on a driving output electrode by a low temperature chemical vapor deposition (CVD) method, forming a switching semiconductor on the gate insulating film, stacking a second conductive layer on the gate insulating film and the switching semiconductor, and etching by switching Data line including input electrode, switching output electrode and drive control electrode Forming a pixel electrode connected to the driving output electrode, forming a light emitting member on the pixel electrode, and forming a common electrode on the light emitting member.

In another aspect of the present invention, there is provided a method of manufacturing an organic light emitting diode display, including forming a driving semiconductor on a substrate, stacking a first conductive layer on the substrate and the driving semiconductor, and etching the photosensitive layer with a mask to control switching. Forming an electrode, a driving voltage line and a driving output electrode, reflowing the photoresist film, cleaning the substrate with hydrogen fluoride (HF) in the presence of the photoresist film, removing the photoresist film, the switching Forming a gate insulating film on a control electrode, the driving voltage line, and the driving output electrode, forming a switching semiconductor on the gate insulating film, stacking a second conductive layer on the gate insulating film and the switching semiconductor, and etching a photo; Data line including electrodes, switching output electrodes and drive control Forming an electrode, forming a pixel electrode that is connected to the driving output electrode, forming a light emitting member on the pixel electrode, and a step of forming a common electrode on the light emitting member.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

First, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172, and a plurality of pixels connected to them and arranged in a substantially matrix form. do.

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a plurality of data lines 171 for transmitting a data signal, and a plurality of driving voltage lines for transmitting a driving voltage. and a driving voltage line 172. The gate lines 121 extend substantially in the row direction, and are substantially parallel to each other, and the data line 171 and the driving voltage line 172 extend substantially in the column direction, and are substantially parallel to each other.

Each pixel PX includes a switching transistor Qs, a driving transistor Qd, a storage capacitor Cst, and an organic light emitting diode OLED. It includes.

The switching transistor Qs has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the gate line 121, and the input terminal is a data line 171. ) And the output terminal is connected to the driving transistor Qd. The switching transistor Qs transfers the data signal applied to the data line 171 to the driving transistor Qd in response to the scan signal applied to the gate line 121.

The driving transistor Qd also has a control terminal, an input terminal and an output terminal, the control terminal being connected to the switching transistor Qs, the input terminal being connected to the driving voltage line 172, and the output terminal being the organic light emitting diode. It is connected to (LD). The driving transistor Qd flows an output current I _LD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving transistor Qd. The capacitor Cst charges the data signal applied to the control terminal of the driving transistor Qd and maintains it even after the switching transistor Qs is turned off.

The organic light emitting diode LD has an anode connected to the output terminal of the driving transistor Qd and a cathode connected to the common voltage Vss. The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current I _LD of the driving transistor Qd.

The switching transistor Qs and the driving transistor Qd are n-channel field effect transistors (FETs). However, at least one of the switching transistor Qs and the driving transistor Qd may be a p-channel field effect transistor. In addition, the connection relationship between the transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

Various embodiments of the organic light emitting diode display will be described with reference to the accompanying drawings.

Example 1

Next, a detailed structure of the organic light emitting diode display illustrated in FIG. 1 will be described in detail with reference to FIGS. 2 and 3 along with FIG. 1.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment, and FIG. 3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along a line III-III.

A driving semiconductor 154b made of a microcrystalline semiconductor or a polycrystalline semiconductor is formed on an insulating substrate 110 made of transparent glass or plastic.

On the substrate 110 and the driving semiconductor 154b, a plurality of gate lines 121 including a switching control electrode 124a and an end portion 129, a driving voltage line 172 including a driving input electrode 173b, and The drive output electrode 175b is formed.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes a wide end portion 129 for connection with another layer or an external driving circuit, and the switching control electrode 124a extends upward from the gate line 121. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The driving voltage line 172 transfers a driving voltage and mainly extends in a horizontal direction to be parallel to the gate line 121. The driving voltage line 172 overlaps the sustain electrode 127.

The driving output electrode 175b is separated from the gate line 121 and the driving voltage line 172. The driving input electrode 173b and the driving output electrode 175b face each other with respect to the driving semiconductor 154b.

The gate line 121 has a double film structure. The top layer is made of low resistivity aluminum metal to reduce signal delay and voltage drop. The bottom film is also made of molybdenum-based metal. However, the gate line 121 may be made of various other metals or conductors.

The gate line 121, the driving voltage line 172, and the driving output electrode 175b may be made of the same material.

In FIG. 3, the lower layer has the letter p and the upper layer has the letter q with reference numerals.

Side surfaces of the gate line 121, the driving voltage line 172, and the driving output electrode 175b are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 ° to about 80 °.

A plurality of pairs of ohmic contacts 163b and 165b are formed between the driving semiconductor 154b and the driving input electrode 173b and between the driving semiconductor 154b and the driving output electrode 175b, respectively. The ohmic contacts 163b and 165b may be made of a material of amorphous silicon, microcrystalline silicon, or polycrystalline silicon doped with a high concentration of n-type impurities such as phosphorus (P).

A gate insulating layer 140 made of silicon nitride (SiN _x ) or silicon oxide (SiO _x ) is formed on the gate line 121, the driving voltage line 172, and the driving output electrode 175b.

A plurality of switching semiconductors 154a made of hydrogenated amorphous silicon are formed on the gate insulating layer 140. The switching semiconductor 154a overlaps the switching control electrode 124a.

A data line 171 including a switching input electrode 173a and an end portion 179, a switching output electrode 175a, and a driving control electrode 124b are formed on the gate insulating layer 140 and the switching semiconductor 154a. .

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121 and the driving voltage line 172. Each data line 171 has a wide end portion 179 for connection with a plurality of switching input electrodes 173a extending toward the switching control electrode 124a and another layer or an external driving circuit. Include. When a data driving circuit (not shown) generating a data signal is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The switching output electrode 175a is separated from the data line 171.

Side surfaces of the data line 171 and the switching output electrode 175a are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 ° to about 80 °.

The drive control electrode 124b is island-shaped and includes a storage capacitor 127 extending in the horizontal direction.

The drive control electrode 124b is formed of an aluminum-based metal such as aluminum (Al) or an aluminum alloy, a silver-based metal such as silver (Ag) or a silver alloy, a copper-based metal such as copper (Cu) or a copper alloy, molybdenum (Mo) or molybdenum alloy Molybdenum-based metals, such as chromium (Cr), tantalum (Ta), and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties.

The driving control electrode 124b is inclined with respect to the surface of the substrate 110 and the inclination angle is preferably about 30 ° to about 80 °.

The data line 171 and the switching output electrode 175a may be made of the same material as the driving control electrode 124b.

The switching input electrode 173a and the switching output electrode 175a partially overlap the switching control electrode 124a and face each other with respect to the switching semiconductor 154a.

The driving control electrode 124b is formed on the driving semiconductor 154b and partially overlaps the driving input electrode 173b and the driving output electrode 175b.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. The ohmic contacts 163a and 165a may be made of amorphous silicon in which n-type impurities such as phosphorus (P) are heavily doped.

The passivation layer 180 is formed on the data line 171, the switching output electrode 175a, and the driving control electrode 124b.

The passivation layer 180 is formed with a plurality of contact holes 185a, 184, and 182 exposing the switching output electrode 175a, the driving control electrode 124b, and the end portion 179 of the data line 171. The contact holes 181 and 185b exposing the end portion 129 of the gate line 121 and the driving output electrode 175b are formed in the 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191, a connection member 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191, the connection member 85, and the contact assistants 81 and 82 may be made of a transparent conductor such as ITO or IZO, and in the case of top emission, aluminum or an aluminum alloy, high work It may be made of an opaque conductor such as gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W) or alloys thereof having a work function.

The pixel electrode 191 is electrically connected to the driving output electrode 175b, and the connection member 85 is connected to the switching output electrode 175a and the driving control electrode 124b.

A partition 361 having an opening 365 is formed on the pixel electrode 191, the connection member 85, and the contact auxiliary members 81 and 82. The partition 361 defines an opening 365 by surrounding the edge of the pixel electrode 191 like a bank. The partition 361 may be made of an organic insulator such as acrylic resin, polyimide resin, or an inorganic insulator such as silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ). It may be, and may be two or more layers. The partition 361 may also be made of a photosensitive material containing black pigment, in which case the partition 361 serves as a light blocking member and the forming process is simple.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361, and a common electrode 270 is formed on the partition 361 and the organic light emitting member 370. have.

The organic light emitting member 370 may have a multilayer structure including an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer (not shown) for emitting light.

The light emitting layer may be made of a polymer material or a low molecular material or a mixture thereof that uniquely emits any one of primary colors such as three primary colors of red, green, and blue. Polymeric materials include, for example, polyfluorene derivatives, (poly) paraphenylenevinylene derivatives, polyphenylene derivatives, polyvinylcarbazole, polythiophene Derivatives and the like. In addition, low molecular weight materials include anthracene such as 9,10-diphenylanthracene, butadiene such as tetraphenylbutadiene, tetratracene, and distyrylarylene. ) Derivatives, benzazole derivatives and carbazole derivatives. Or the above-mentioned high molecular material or low molecular material as a host material, for example, xanthene, perylene, coumarin, rhodamine, rubrene, dish Aminomethylenepyran compound, thiopyran compound, (thia) pyrilium compound, periflanthene derivative, indenoperylene derivative, carbostyryl Dopant such as a compound, nile red, and quinacridone may be used to increase luminous efficiency. The organic light emitting diode display displays a desired image by using a spatial sum of primary color light emitted from the emission layer. The auxiliary layer includes an electron transport layer (not shown) and a hole transport layer (not shown) for balancing electrons and holes, and an electron injection layer for enhancing the injection of electrons and holes ( electron injecting layer (not shown) and hole injecting layer (hole injecting layer) (not shown) and the like, and may include one or two or more layers selected from them. The hole transport layer and the hole injection layer are made of a material having a work function that is about the middle of the pixel electrode 191 and the light emitting layer, and the electron transport layer and the electron injection layer have a work function that is about the middle of the common electrode 270 and the light emitting layer. Is made with. For example, the hole transport layer or the hole injection layer may include diamines, MTDATA ([4,4 ', 4 "-tris (3-methylphenyl) phenylamino] triphenylamine), TPD (N, N'-diphenyl-N, N'-di ( 3-methylphenyl) -1,1'-biphenyl-4,4'-diamine), 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane (1,1-bis (4-di-p -tolylaminophenyl) cyclohexane), N, N, N ', N'-tetra (2-naphthyl) -4,4 "-diamino-p-terphenyl (N, N, N', N'-tetra (2 -naphthyl) -4,4 "-diamino-p-terphenyl), 4,4'.4" -tris [(3-methylphenyl) phenylamino] triphenylamine (4,4 ', 4 "-tris [(3 -methylphenyl) phenylamino] triphenylamine), polypyrrole, polyaniline, a mixture of polyethylenedioxythiophene and polystyrenesulfonic acid (poly- (3,4-ethylenedioxythiophene: polystyrenesulfonate, PEDOT: PSS) can be used.

The organic light emitting member 370 may implement a desired color for each pixel by arranging light emitting layers emitting colors such as red, green, and blue colors for each pixel, and vertically or horizontally arrange the red, green, and blue light emitting layers on one pixel. By forming a white light emitting layer to form a color filter for implementing the colors of red, green and blue on the bottom or top of the white light emitting layer may implement a desired color. In this case, the color filter may be positioned under the light emitting layer in the case of the bottom emission structure, and may be positioned above the light emitting layer in the case of the top emission structure.

In addition to the three-color structure including the red, green, and blue pixels, the four-color structure including the red, green, blue, and white pixels may be arranged in the form of a stripe or a checkerboard to improve luminance.

The common electrode 270 is formed on the organic light emitting member 370. The common electrode 270 is formed on the entire surface of the substrate, and pairs with the pixel electrode 191 to send a current to the organic light emitting member 370.

In the organic light emitting diode display, the switching control electrode 124a connected to the gate line 121, the switching input electrode 173a connected to the data line 171, and the switching output electrode 175a are connected to the switching semiconductor 154a. ) And a switching TFT Qs, and a channel of the switching TFT Qs is formed in the switching semiconductor 154a between the switching input electrode 173a and the switching output electrode 175a. do. The driving control electrode 124b connected to the switching output electrode 175a, the driving input electrode 173b connected to the driving voltage line 172, and the driving output electrode 175b connected to the pixel electrode 191 are driven. A driving TFT Qd is formed together with the semiconductor 154b, and a channel of the driving TFT Qd is formed in the driving semiconductor 154b between the driving input electrode 173b and the driving output electrode 175b. do.

The pixel electrode 191, the organic light emitting member 370, and the common electrode 270 form an organic light emitting diode LD, and the pixel electrode 191 is an anode and the common electrode 270 is a cathode. Alternatively, the pixel electrode 191 becomes a cathode and the common electrode 270 becomes an anode. In addition, the storage electrode 127 and the driving voltage line 172 overlapping each other form a storage capacitor Cst.

Next, a method of manufacturing the OLED display illustrated in FIGS. 2 and 3 will be described in detail with reference to FIGS. 4 through 12.

4 through 12 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 2 and 3 according to an exemplary embodiment of the present invention.

As shown in FIG. 4, the amorphous silicon layer and the impurity amorphous silicon layer are successively stacked on the substrate 110, and then crystallized by a solid phase crystallization method, followed by photolithography to drive the semiconductor 154b and the ohmic contact layer 164b. To form.

Next, as shown in FIG. 5, the lower layer 170p made of molybdenum (Mo) -based metal and the upper layer 170q made of aluminum (Al) are sequentially formed on the substrate 110 and the ohmic contact layer 164b. Laminated.

Next, the photoresist film PR1 is applied and exposed and developed using a mask, and the lower layer 170p, the upper layer 170q, and the ohmic contact layer 164b are dry etched or wet etched using the photoresist as an etch mask. do.

Next, as shown in FIG. 6, the hydrogen fluoride (HF) washing process is performed in the state which does not remove the photosensitive film PR1. At this time, the upper layer 170q made of aluminum is damaged by the hydrogen fluoride (HF) cleaning process, but the step coverage is improved in a subsequent process.

Next, as illustrated in FIG. 7, the photosensitive film PR1 is removed to drive the gate voltage line including the gate line 121 including the switching control electrode 124a and the end portion 129 and the driving input electrode 173b. 172 and the drive output electrode 175b are formed. In addition, a pair of ohmic contacts 163b and 165b are formed.

5 to 12, the lower layer of the gate line 121, the end portion 129 of the gate line, and the driving voltage line 172 are denoted by the letter p and the upper layer q in addition to the reference numerals.

Next, as shown in FIG. 8, a gate insulating layer 140 is formed on the gate line 121, the driving voltage line 172, and the driving output electrode 175b.

The gate insulating layer 140 may be formed by a low temperature chemical vapor deposition (CVD) method of 200 ° C. The low temperature process as described above can prevent the hillock of the aluminum layer by a subsequent process.

Next, as shown in FIG. 9, the intrinsic amorphous silicon layer and the impurity amorphous silicon layer are sequentially stacked, and then photo-etched to form the switching semiconductor 154a and the ohmic contact layer 164a.

Next, as shown in FIG. 10, a metal layer is stacked and photo-etched on the gate insulating layer 140 and the ohmic contact layer 164a to include the data line 171 including the switching input electrode 173a and the end portion 179. The switching output electrode 175a and the driving control electrode 124b are formed.

Next, the ohmic contact layer 164a is etched using the data line 171 and the switching output electrode 175a as a mask to form a pair of ohmic contacts 163a and 165a.

Next, as shown in FIG. 11, a plurality of contact holes 181, 182, 184, 185a and 185b are formed by stacking the protective film 180 on the entire surface of the substrate and etching the photo.

Next, as shown in FIG. 12, after the ITO is deposited on the passivation layer 180, photo etching is performed to form the plurality of pixel electrodes 191, the connection member 85, and the plurality of contact assistants 81 and 82. .

Next, as shown in FIGS. 2 and 3, after the photosensitive organic layer is coated on the pixel electrode 191, the connection member 85, the plurality of contact auxiliary members 81 and 82, and the passivation layer 180, exposure and development are performed. As a result, a partition 361 having a plurality of openings 365 is formed.

Subsequently, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365.

Finally, the common electrode 270 is formed on the partition 361 and the light emitting member 370.

Example 2

Hereinafter, another structure of the OLED display illustrated in FIG. 1 will be described in detail with reference to FIGS. 13 and 14 together with FIG. 1.

The content overlapping with the above-described embodiment is omitted.

A driving semiconductor 154b made of a microcrystalline semiconductor or a polycrystalline semiconductor is formed on the insulating substrate 110.

On the substrate 110 and the driving semiconductor 154b, a plurality of gate lines 121 including a switching control electrode 124a and an end portion 129, a driving voltage line 172 including a driving input electrode 173b, and driving The output electrode 175b is formed.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction.

The driving voltage line 172 transfers a driving voltage and mainly extends in a horizontal direction to be parallel to the gate line 121. The driving voltage line 172 overlaps the sustain electrode 127.

The driving output electrode 175b is separated from the gate line 121 and the driving voltage line 172.

The driving input electrode 173b and the driving output electrode 175b face each other with respect to the driving semiconductor 154b.

The gate line 121 may be made of an aluminum-based metal such as aluminum (Al) or an aluminum alloy.

The gate line 121, the driving voltage line 172, and the driving output electrode 175b may be made of the same material.

A plurality of pairs of ohmic contacts 163b and 165b are formed between the driving semiconductor 154b and the driving input electrode 173b and between the driving semiconductor 154b and the driving output electrode 175b, respectively. The ohmic contacts 163b and 165b may be made of silicon nitrided.

A gate insulating layer 140 made of silicon nitride (SiN _x ) or silicon oxide (SiO _x ) is formed on the gate line 121, the driving voltage line 172, and the driving output electrode 175b.

A plurality of switching semiconductors 154a made of hydrogenated amorphous silicon are formed on the gate insulating layer 140. The switching semiconductor 154a overlaps the switching control electrode 124a.

A data line 171 including a switching input electrode 173a and an end portion 179, a switching output electrode 175a, and a driving control electrode 124b are formed on the gate insulating layer 140 and the switching semiconductor 154a. .

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121 and the driving voltage line 172.

The switching output electrode 175a is separated from the data line 171.

The drive control electrode 124b is island-shaped and includes a storage capacitor 127 extending in the horizontal direction.

The switching input electrode 173a and the switching output electrode 175a partially overlap the switching control electrode 124a and face each other with respect to the switching semiconductor 154a.

The driving control electrode 124b is formed on the driving semiconductor 154b and partially overlaps the driving input electrode 173b and the driving output electrode 175b.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. The ohmic contacts 163a and 165a may be made of amorphous silicon in which n-type impurities such as phosphorus (P) are heavily doped.

The protection layer 180 is formed on the data line 171, the switching output electrode 175a, and the driving control electrode 124b.

The passivation layer 180 is formed with a plurality of contact holes 185a, 184, and 182 exposing the switching output electrode 175a, the driving control electrode 124b, and the end portion 179 of the data line 171. The contact holes 181 and 185b exposing the end portion 129 of the gate line 121 and the driving output electrode 175b are formed in the 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191, a connection member 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191 is electrically connected to the driving output electrode 175b, and the connection member 85 is connected to the switching output electrode 175a and the driving control electrode 124b.

A partition 361 having an opening 365 is formed on the pixel electrode 191, the connection member 85, and the contact auxiliary members 81 and 82.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361, and a common electrode 270 is formed on the partition 361 and the organic light emitting member 370. have.

Next, a method of manufacturing the OLED display illustrated in FIGS. 13 and 14 will be described in detail with reference to FIGS. 15 to 21.

15 to 21 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 13 and 14 according to an exemplary embodiment of the present invention.

As shown in FIG. 15, the amorphous silicon layer is stacked on the substrate 110 and then crystallized by a solid phase crystallization method, and the substrate 110 is crystallized by plasma treatment with a gas such as nitrogen (N ₂ ). A nitride layer is formed at the interface.

Afterwards, the driving semiconductor 154b and the ohmic contact layer 164b are formed by photolithography.

Next, as shown in FIG. 16, a metal layer made of aluminum (Al) is stacked on the substrate 110 and the ohmic contact layer 164b, and photo-etched to include a switching control electrode 124a and an end portion 129. The gate line 121, the driving voltage line 172 including the driving input electrode 173b, and the driving output electrode 175b are formed.

Next, the ohmic contact layer 164b is etched using the driving voltage line 172 and the driving output electrode 175b as a mask to form a pair of ohmic contacts 163b and 165b.

Thereafter, a hydrogen fluoride (HF) cleaning process is performed. The film made of aluminum is damaged by the hydrogen fluoride (HF) cleaning process but the step coverage is improved in subsequent processes.

Next, as shown in FIG. 17, a gate insulating layer 140 is formed on the gate line 121, the driving voltage line 172, and the driving output electrode 175b. In this case, the gate insulating layer 140 may be formed by chemical vapor deposition (CVD) at a high temperature of 300 ° C or higher.

Next, as shown in FIG. 18, the intrinsic amorphous silicon layer and the impurity amorphous silicon layer are successively stacked and then photo-etched to form the switching semiconductor 154a and the ohmic contact layer 164a.

Next, as shown in FIG. 19, a metal layer is stacked and photo-etched on the gate insulating layer 140 and the ohmic contact layer 164a to include a data line 171 including a switching input electrode 173a and an end portion 179. The switching output electrode 175a and the driving control electrode 124b are formed.

Next, the ohmic contact layer 164a is etched using the data line 171 and the switching output electrode 175a as a mask to form a pair of ohmic contacts 163a and 165a.

Next, as shown in FIG. 20, a plurality of contact holes 181, 182, 184, 185a and 185b are formed by stacking the protective film 180 on the entire surface of the substrate and etching the photo.

Next, as illustrated in FIG. 21, ITO is deposited on the passivation layer 180, and then photo-etched to form a plurality of pixel electrodes 191, a connection member 85, and a plurality of contact assistants 81 and 82. .

Next, as shown in FIGS. 13 and 14, after the photosensitive organic layer is coated on the pixel electrode 191, the connection member 85, the plurality of contact auxiliary members 81 and 82, and the passivation layer 180, exposure and development are performed. As a result, a partition 361 having a plurality of openings 365 is formed.

Subsequently, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365.

Finally, the common electrode 270 is formed on the partition 361 and the light emitting member 370.

Example 3

Hereinafter, another structure of the OLED display illustrated in FIG. 1 will be described in detail with reference to FIGS. 22 and 23 along with FIG. 1.

The content overlapping with the above-described embodiment is omitted.

A driving semiconductor 154b made of a microcrystalline semiconductor or a polycrystalline semiconductor is formed on the insulating substrate 110.

On the substrate 110 and the driving semiconductor 154b, a plurality of gate lines 121 including a switching control electrode 124a and an end portion 129, a driving voltage line 172 including a driving input electrode 173b, and driving The output electrode 175b is formed.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction.

The driving voltage line 172 transfers a driving voltage and mainly extends in a horizontal direction to be parallel to the gate line 121. The driving voltage line 172 overlaps the sustain electrode 127.

The driving output electrode 175b is separated from the gate line 121 and the driving voltage line 172. The driving input electrode 173b and the driving output electrode 175b face each other with respect to the driving semiconductor 154b.

The gate line 121 has a triple layer structure including a lower layer 121p, an intermediate layer 121q, and an upper layer 121r. The lower layer 121p is made of a refractory metal such as molybdenum, chromium, tantalum and titanium, or an alloy thereof, the intermediate layer 121q is made of an aluminum-based metal having a low specific resistance, and the upper layer 121r is made of ITO. Or made of refractory metals or alloys thereof with excellent contact properties with IZO. Examples of such a triple film structure include a molybdenum (alloy) lower film, an aluminum (alloy) interlayer, and a molybdenum (alloy) upper film.

The gate line 121, the driving voltage line 172, and the driving output electrode 175b may be made of the same material.

A plurality of pairs of ohmic contacts 163b and 165b are formed between the driving semiconductor 154b and the driving input electrode 173b and between the driving semiconductor 154b and the driving output electrode 175b, respectively.

A gate insulating layer 140 made of silicon nitride (SiN _x ) or silicon oxide (SiO _x ) is formed on the gate line 121, the driving voltage line 172, and the driving output electrode 175b.

A plurality of switching semiconductors 154a made of hydrogenated amorphous silicon are formed on the gate insulating layer 140. The switching semiconductor 154a overlaps the switching control electrode 124a.

A data line 171 including a switching input electrode 173a and an end portion 179, a switching output electrode 175a, and a driving control electrode 124b are formed on the gate insulating layer 140 and the switching semiconductor 154a. .

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121 and the driving voltage line 172.

The switching output electrode 175a is separated from the data line 171.

The drive control electrode 124b is island-shaped and includes a storage capacitor 127 extending in the horizontal direction.

The switching input electrode 173a and the switching output electrode 175a partially overlap the switching control electrode 124a and face each other with respect to the switching semiconductor 154a.

The driving control electrode 124b is formed on the driving semiconductor 154b and partially overlaps the driving input electrode 173b and the driving output electrode 175b.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively.

 The passivation layer 180 is formed on the data line 171, the switching output electrode 175a, and the driving control electrode 124b.

The passivation layer 180 is formed with a plurality of contact holes 185a, 184, and 182 exposing the switching output electrode 175a, the driving control electrode 124b, and the end portion 179 of the data line 171. The contact holes 181 and 185b exposing the end portion 129 of the gate line 121 and the driving output electrode 175b are formed in the 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191, a connection member 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191 is electrically connected to the driving output electrode 175b, and the connection member 85 is connected to the switching output electrode 175a and the driving control electrode 124b.

A partition 361 having an opening 365 is formed on the pixel electrode 191, the connection member 85, and the contact auxiliary members 81 and 82.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361, and a common electrode 270 is formed on the partition 361 and the organic light emitting member 370. It is.

Next, a method of manufacturing the OLED display illustrated in FIGS. 22 and 23 will be described in detail with reference to FIGS. 24 to 31.

24 to 31 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 22 and 23 according to an exemplary embodiment of the present invention.

As shown in FIG. 24, an amorphous silicon layer and an impurity amorphous silicon layer are sequentially stacked on the substrate 110, and then crystallized by a solid phase crystallization method, followed by photolithography to drive the semiconductor 154b and the ohmic contact layer 164b. To form.

Next, as shown in FIG. 25, the molybdenum (alloy) lower layer 160p, the aluminum (alloy) intermediate layer 160q, and the molybdenum (alloy) upper layer 160r are disposed on the substrate 110 and the ohmic contact layer 164b. The metal layer of the triple layer consisting of the laminated.

Next, the photoresist film PR2 is applied and exposed and developed using a mask, and the lower layer 160p, the intermediate layer 160q, the upper layer 160q and the ohmic contact layer 164b are dried by using the photoresist as an etch mask. Etch or wet etch.

Next, as shown in FIG. 26, the photosensitive film PR2 is reflowed. Then, a hydrogen fluoride (HF) washing step is performed without removing the photosensitive film PR2. Then, the intermediate film 160q made of aluminum is protected by the photoresist film PR2 and is not damaged by the hydrogen fluoride (HF) cleaning process.

27, the driving voltage line including the gate line 121 including the switching control electrode 124a and the end portion 129 and the driving input electrode 173b by removing the photoresist film PR2. 172 and drive output electrode 175b and a pair of ohmic contacts 163b and 165b are formed.

25 to 31, the lower layer has an alphabet letter p, the middle layer has an alphabet letter q, and the upper layer has an alphabet letter r with respect to the gate line 121, the end portion 129 of the gate line, the driving voltage line 172, and the driving output electrode 175b. Are shown in addition to the reference numerals.

Next, as illustrated in FIG. 28, the gate insulating layer 140, the intrinsic amorphous silicon layer, and the impurity amorphous silicon layer are successively stacked on the gate line 121, the driving voltage line 172, and the driving output electrode 175b. Photo etching is performed to form the switching semiconductor 154a and the ohmic contact layer 164a.

Next, as illustrated in FIG. 29, a metal layer is stacked and photo-etched on the gate insulating layer 140 and the ohmic contact layer 164a to include the switching input electrode 173a and the end portion 179. The switching output electrode 175a and the driving control electrode 124b are formed.

Next, the ohmic contact layer 164a is etched using the data line 171 and the switching output electrode 175a as a mask to form a pair of ohmic contacts 163a and 165a.

Next, as shown in FIG. 30, the passivation layer 180 is stacked on the entire surface of the substrate and photo-etched to form a plurality of contact holes 181, 182, 184, 185a and 185b.

Next, as shown in FIG. 31, the ITO is deposited on the passivation layer 180, and then photo-etched to form the plurality of pixel electrodes 191, the connection member 85, and the plurality of contact assistants 81 and 82. .

Next, as shown in FIGS. 22 and 23, after the photosensitive organic layer is coated on the pixel electrode 191, the connection member 85, the plurality of contact auxiliary members 81 and 82, and the passivation layer 180, exposure and development are performed. As a result, a partition 361 having a plurality of openings 365 is formed.

Subsequently, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365.

Finally, the common electrode 270 is formed on the partition 361 and the light emitting member 370.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

According to the present invention, it is possible to prevent a problem caused by hydrogen fluoride (HF) in the cleaning process and a subsequent process.

Claims (10)

Forming a semiconductor on the substrate, Stacking a first conductive layer on the substrate and the semiconductor and photo-etching the photoresist with a mask to form an input electrode and an output electrode; Cleaning the substrate with hydrogen fluoride (HF) in the presence of the photoresist layer, Removing the photosensitive film; Forming a gate insulating film on the input electrode and the output electrode by a low temperature chemical vapor deposition (CVD) method, and Stacking a second conductive layer on the gate insulating layer and performing photolithography to form a control electrode Method of manufacturing an organic light emitting display device comprising a. In claim 1, The first conductive layer is formed of a lower layer made of molybdenum (Mo) -based metal and an upper layer made of aluminum (Al). In claim 1, Forming the semiconductor Forming an amorphous semiconductor, and Crystallizing the amorphous semiconductor by solid phase crystallization Method of manufacturing an organic light emitting display device comprising a. Forming an amorphous semiconductor on the substrate, Crystallizing the amorphous semiconductor by solid phase crystallization, Plasma-processing the crystallized semiconductor with nitrogen (N ₂ ) gas; Stacking a first conductive layer on the substrate and the semiconductor and performing photolithography to form an input electrode and an output electrode; Cleaning the substrate with hydrogen fluoride (HF), Forming a gate insulating film on the input electrode and the output electrode, and Stacking a second conductive layer on the gate insulating layer and performing photolithography to form a control electrode Method of manufacturing an organic light emitting display device comprising a. In claim 4, The first conductive layer is made of an aluminum alloy. Forming a semiconductor on the substrate, Stacking a first conductive layer on the substrate and the semiconductor and photo-etching the photoresist with a mask to form an input electrode and an output electrode; Reflowing the photosensitive film; Cleaning the substrate with hydrogen fluoride (HF) in the presence of the reflowed photoresist, Removing the photosensitive film; Forming a gate insulating film on the input electrode and the output electrode, and Stacking a second conductive layer on the gate insulating layer and performing photolithography to form a control electrode Method of manufacturing an organic light emitting display device comprising a. In claim 6, The first conductive layer may be formed of a lower layer made of molybdenum-based metal, an intermediate layer made of aluminum or aluminum alloy, and an upper layer made of molybdenum-based metal. In claim 6, Forming the semiconductor Forming an amorphous semiconductor, and Crystallizing the amorphous semiconductor by solid phase crystallization Method of manufacturing an organic light emitting display device comprising a. Forming a driving semiconductor on the substrate, Forming a switching control electrode, a driving voltage line, and a driving output electrode by stacking a first conductive layer on the substrate and the driving semiconductor and photo-etching the photoresist with a mask; Cleaning the substrate with hydrogen fluoride (HF) in the presence of the photoresist layer, Removing the photosensitive film; Forming a gate insulating film on the switching control electrode, the driving voltage line, and the driving output electrode by a low temperature chemical vapor deposition (CVD) method; Forming a switching semiconductor on the gate insulating layer; Stacking and photo-etching a second conductive layer on the gate insulating layer and the switching semiconductor to form a data line including a switching input electrode, a switching output electrode, and a driving control electrode; Forming a pixel electrode connected to the driving output electrode; Forming a light emitting member on the pixel electrode, and Forming a common electrode on the light emitting member Method of manufacturing an organic light emitting display device comprising a. Forming a driving semiconductor on the substrate, Forming a switching control electrode, a driving voltage line, and a driving output electrode by stacking a first conductive layer on the substrate and the driving semiconductor and photo-etching the photoresist with a mask; Reflowing the photosensitive film; Cleaning the substrate with hydrogen fluoride (HF) in the presence of the photoresist layer, Removing the photosensitive film; Forming a gate insulating film on the switching control electrode, the driving voltage line, and the driving output electrode; Forming a switching semiconductor on the gate insulating layer; Stacking and photolith etching a second conductive layer on the gate insulating layer and the switching semiconductor to form a data line including a switching input electrode, a switching output electrode, and a driving control electrode; Forming a pixel electrode connected to the driving output electrode; Forming a light emitting member on the pixel electrode, and Forming a common electrode on the light emitting member Method of manufacturing an organic light emitting display device comprising a.

Images