KR20080050690A - Method for manufacturing organic light emitting diode display - Google Patents

Abstract

A method for manufacturing an organic light emitting diode display is provided to prevent a data voltage of a switching thin-film transistor from being reduced, and prevent reduction of a current amount and deterioration of a display characteristic. A method for manufacturing an organic light emitting diode display includes the steps of: forming a switching control electrode(124a), a driving voltage line(172), a driving output electrode(175b), and a resistive contact layer; forming a driving semiconductor(154b) of glass silicon on the driving voltage line and the driving output electrode; completing resistive contact members(163a,163b,165a,165b); crystallizing the driving semiconductor; forming gate insulation films(140) on the driving semiconductor; forming a switching semiconductor(154a); forming a data line(171), a switching output electrode(175a), and a driving control electrode(124b); forming a first electrode connected to the driving output electrode; forming a light emitting member(370) on the first electrode; and forming a second electrode on the light emitting member.

Description

Manufacturing method of organic light emitting display device {METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY}

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment of the present invention.

3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along line III-III.

4 to 9 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 2 and 3 according to an exemplary embodiment of the present invention.

10 is a layout view of an organic light emitting diode display according to another exemplary embodiment.

FIG. 11 is a cross-sectional view of the organic light emitting diode display of FIG. 10 taken along the line XI-XI. FIG.

12 to 18 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 10 and 11 according to an exemplary embodiment of the present invention.

<Description of Drawing>

110: insulating substrate 121: gate line

124a: switching control electrode 124b: drive control electrode

127: sustain electrode 129: end of gate line

140 and 142: gate insulating film 154a: switching semiconductor

154b: driving semiconductors 163a, 163b, 165a, and 165b: ohmic contacts

171: data line 172: driving voltage line

173a: switching input electrode 173b: drive input electrode

175a: switching output electrode 175b: driving output electrode

179: end of data line 81, 82: contact auxiliary member

85: connecting member

181, 182, 184, 185a, 185b: contact hole

191: pixel electrode 270: common electrode

361: partition 370: organic light emitting member

Qs: switching transistor Qd: driving transistor

LD: organic light emitting diamond Vss: common voltage

Cst: retaining capacitor

The present invention relates to a method of manufacturing an organic light emitting display device.

Recently, there is a demand for weight reduction and thinning of a monitor or a television, and according to such a demand, a cathode ray tube (CRT) has been replaced by a liquid crystal display (LCD).

However, the liquid crystal display device requires not only a separate backlight as a light emitting device, but also has many problems in response speed and viewing angle.

Recently, as a display device capable of overcoming such a problem, an organic light emitting diode display (OLED display) has attracted attention.

The organic light emitting diode display includes two electrodes and a light emitting layer interposed therebetween, and electrons injected from one electrode and holes injected from another electrode are combined in the light emitting layer to form excitons. The excitons emit light while releasing energy.

The OLED display is self-luminous and does not require a separate light source, which is advantageous in terms of power consumption, and also has excellent response speed, viewing angle, and contrast ratio.

The organic light emitting diode display may be classified into a passive matrix OLED display of a simple matrix type and an active matrix OLED display of an active matrix type according to a driving method.

Among these, an active matrix type organic light emitting display device is a driving thin film transistor that is connected to a signal line to control a data voltage and a data voltage received therefrom as a gate voltage to drive current through the light emitting device. And driving thin film transistors.

However, the characteristics required for the switching thin film transistor and the driving thin film transistor are different in order for the organic light emitting diode display to exhibit optimal characteristics. Switching thin film transistors require high on / off current ratio (I _on / I _off ) characteristics, while driving thin film transistors require high mobility and stability to allow sufficient current to flow through the light emitting device.

When the off current increases in the switching thin film transistor, the data voltage transmitted to the driving thin film transistor decreases, thereby causing cross talk. When the driving thin film transistor has low mobility and stability, the amount of current flowing through the light emitting device is reduced. The amount of light emitted can be reduced, resulting in image sticking and shortening of lifespan. In particular, the semiconductor may be damaged during the manufacturing process, thereby degrading the operation of the driving thin film transistor.

Accordingly, the technical problem to be solved by the present invention is to solve the above problems and to simultaneously meet the characteristics required for the switching thin film transistor and the driving thin film transistor, thereby improving the characteristics of the organic light emitting display device.

A method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention includes forming a switching control electrode, a driving voltage line, a driving output electrode, and an ohmic contact layer by stacking and patterning a metal layer and an impurity silicon layer on a substrate. And forming a driving semiconductor of amorphous silicon on the driving output electrode, etching the ohmic contact layer to complete an ohmic contact, crystallizing the driving semiconductor, and forming a gate insulating film on the driving semiconductor. Forming a switching semiconductor on the gate insulating film, forming a data line including a switching input electrode, a switching output electrode, and a driving control electrode on the gate insulating film and the switching semiconductor, and a first connection connected to the driving output electrode Forming an electrode, over the first electrode Forming a light emitting member, and a step of forming a second electrode on the light emitting member.

The driving semiconductor is preferably etched together with the ohmic contact layer, and the switching semiconductor may be formed of amorphous silicon.

The step of crystallization is preferably performed by solid phase crystallization (SPC).

According to another exemplary embodiment of the present disclosure, a method of manufacturing an organic light emitting display device may include forming a driving semiconductor by stacking and etching an amorphous silicon layer on a substrate, and depositing and etching an impurity silicon layer on the substrate and the driving semiconductor. Forming a member, crystallizing the driving semiconductor, stacking and patterning a metal layer on the substrate to form a switching control electrode, a driving voltage line and a driving output electrode, forming a gate insulating film on the driving semiconductor, Forming a switching semiconductor on the gate insulating film, forming a data line including a switching input electrode, a switching output electrode, and a driving control electrode on the gate insulating film and the switching semiconductor, and a first connection connected to the driving output electrode Forming an electrode on the first electrode Forming a light emitting member, and forming a second electrode on the light emitting member.

The driving semiconductor and the ohmic contact layer may be etched using a separate mask, and the switching semiconductor may be formed of amorphous silicon.

The step of crystallization is preferably performed by solid phase crystallization (SPC).

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

First, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172, and a plurality of pixels connected to them and arranged in a substantially matrix form. do.

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a plurality of data lines 171 for transmitting a data signal, and a plurality of driving voltage lines for transmitting a driving voltage. and a driving voltage line 172. The gate lines 121 extend substantially in the row direction, and are substantially parallel to each other, and the data line 171 and the driving voltage line 172 extend substantially in the column direction, and are substantially parallel to each other.

Each pixel PX includes a switching transistor Qs, a driving transistor Qd, a storage capacitor Cst, and an organic light emitting diode OLED. It includes.

The switching transistor Qs has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the gate line 121, and the input terminal is a data line 171. ) And the output terminal is connected to the driving transistor Qd. The switching transistor Qs transfers the data signal applied to the data line 171 to the driving transistor Qd in response to the scan signal applied to the gate line 121.

The driving transistor Qd also has a control terminal, an input terminal and an output terminal, the control terminal being connected to the switching transistor Qs, the input terminal being connected to the driving voltage line 172, and the output terminal being the organic light emitting diode. It is connected to (LD). The driving transistor Qd flows an output current I _LD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving transistor Qd. The capacitor Cst charges the data signal applied to the control terminal of the driving transistor Qd and maintains it even after the switching transistor Qs is turned off.

The organic light emitting diode LD has an anode connected to the output terminal of the driving transistor Qd and a cathode connected to the common voltage Vss. The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current I _LD of the driving transistor Qd.

The switching transistor Qs and the driving transistor Qd are n-channel field effect transistors (FETs). However, at least one of the switching transistor Qs and the driving transistor Qd may be a p-channel field effect transistor. In addition, the connection relationship between the transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

Hereinafter, various embodiments of the organic light emitting diode display illustrated in FIG. 1 will be described with reference to the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Example 1

Next, detailed structures of the organic light emitting diode display illustrated in FIG. 1 will be described in detail with reference to FIGS. 2 and 3.

FIG. 2 is a layout view of an organic light emitting diode display according to an exemplary embodiment, and FIG. 3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along line III-III.

A gate line 121 including a switching control electrode 124a and an end portion 129, a driving voltage line 172 including a driving input electrode 173b, and a driving on an insulating substrate 110 made of transparent glass or plastic. The output electrode 175b is formed.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes a wide end portion 129 for connection with another layer or an external driving circuit, and the switching control electrode 124a extends upward from the gate line 121. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The driving voltage line 172 transfers a driving voltage and mainly extends in a horizontal direction to be parallel to the gate line 121. Each driving voltage line 172 includes a plurality of driving input electrodes 173b.

The driving output electrode 175b is separated from the gate line 121 and the driving voltage line 172.

The gate line 121, the driving voltage line 172, and the driving output electrode 175b may be formed of aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper (Cu), or copper alloy. It may be made of a copper-based metal, molybdenum-based metal such as molybdenum (Mo) or molybdenum alloy, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties.

Side surfaces of the gate line 121, the driving voltage line 172, and the driving output electrode 175b are inclined with respect to the surface of the substrate 110, and the inclination angle thereof is preferably about 30 kPa to about 80 kPa.

A plurality of pairs of ohmic contacts 163b and 165b are formed on portions of the driving input electrode 173b and the driving output electrode 175b which are adjacent to each other. The ohmic contacts 163b and 165b have an island shape and may be made of a material of fine crystalline silicon or polycrystalline silicon doped with n-type impurities such as phosphorus (P) at a high concentration.

A drive semiconductor 154b made of microcrystalline silicon or polycrystalline silicon is formed on each pair of ohmic contacts 163b and 165b and the substrate 110 therebetween. .

The driving semiconductor 154b partially overlaps the driving input electrode 173b and the driving output electrode 175b, and the ohmic contacts 163b and 165b may include the driving semiconductor 154b, the driving input electrode 173b, and the driving output electrode. Located only between 175b overlaps.

The gate insulating layer 140 is formed on the gate line 121, the driving voltage line 172, the driving output electrode 175b, and the driving semiconductor 154b.

A plurality of switching semiconductors 154a made of hydrogenated amorphous silicon are formed on the gate insulating layer 140. The switching semiconductor 154a overlaps the switching control electrode 124a.

A data line 171 including a switching input electrode 173a and an end portion 179, a switching output electrode 175a, and a driving control electrode 124b are formed on the switching semiconductor 154a and the gate insulating layer 140. .

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121 and the driving voltage line 172. Each data line 171 has a wide end portion 179 for connection with a plurality of switching input electrodes 173a extending toward the switching control electrode 124a and another layer or an external driving circuit. Include. When a data driving circuit (not shown) generating a data signal is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The switching output electrode 175a is separated from the data line 171. The switching input electrode 173a and the switching output electrode 175a partially overlap the switching semiconductor 154a and face each other with respect to the switching semiconductor 154a.

The drive control electrode 124b is island-shaped and includes a storage capacitor 127 extending in the horizontal direction.

The driving control electrode 124b is positioned between the input electrode 173b and the driving output electrode 175b to overlap the driving semiconductor 154b, and partially overlaps with the driving input electrode 173b and the driving output electrode 175b. have.

Side surfaces of the data line 171 and the switching output electrode 175a are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 kPa to about 80 kPa.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. The ohmic contacts 163a and 165a may have an island shape, and may be made of n + hydrogenated amorphous silicon in which impurities such as phosphorus (P) are highly doped.

The passivation layer 180 is formed on the data line 171, the switching output electrode 175b, and the driving control electrode 124b.

The passivation layer 180 is formed with a plurality of contact holes 185a, 184, and 182 exposing the switching output electrode 175a, the driving control electrode 124b, and the end portion 179 of the data line 171. The contact holes 181 and 185b exposing the end portion 129 of the gate line 121 and the driving output electrode 175b are formed in the 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191, a connection member 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191 is electrically connected to the driving output electrode 175b through the contact hole 185b.

The connecting member 85 is connected to the switching output electrode 175a and the drive control electrode 124b through the contact holes 185a and 184.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portions 129 and 179 of the gate line 121 and the data line 171 and the external device.

The pixel electrode 191, the connection member 85, and the contact assistants 81 and 82 may be made of a transparent conductor such as ITO or IZO, and in the case of top emission, aluminum or an aluminum alloy, high work It may be made of an opaque conductor such as gold (Au), platinum (Pt), nickel (Ni), copper (Cu), tungsten (W) or alloys thereof having a work function.

A partition 361 is formed on the pixel electrode 191, the connection member 85, and the contact auxiliary members 81 and 82. The partition 361 defines an opening 365 by surrounding the edge of the pixel electrode 191 like a bank. The partition 361 may be made of an organic insulator such as acrylic resin, polyimide resin, or an inorganic insulator such as silicon oxide (SiO ₂ ) or titanium oxide (TiO ₂ ). It may be, and may be two or more layers. The partition 361 may also be made of a photosensitive material containing black pigment, in which case the partition 361 serves as a light blocking member and the forming process is simple.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361.

The organic light emitting member 370 may have a multilayer structure including an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer (not shown) for emitting light.

The light emitting layer may be made of a polymer material or a low molecular material or a mixture thereof that uniquely emits light of any one of primary colors such as three primary colors of red, green, and blue. Polymeric materials include, for example, polyfluorene derivatives, (poly) paraphenylenevinylene derivatives, polyphenylene derivatives, polyvinylcarbazole, polythiophene Derivatives and the like. In addition, low molecular weight materials include anthracene such as 9,10-diphenylanthracene, butadiene such as tetraphenylbutadiene, tetratracene, and distyrylarylene. ) Derivatives, benzazole derivatives and carbazole derivatives. Or the above-mentioned high molecular material or low molecular material as a host material, for example, xanthene, perylene, coumarin, rhodamine, rubrene, dish Aminomethylenepyran compound, thiopyran compound, (thia) pyrilium compound, periflanthene derivative, indenoperylene derivative, carbostyryl Dopant such as a compound, nile red, and quinacridone may be used to increase luminous efficiency. The organic light emitting diode display displays a desired image by using a spatial sum of primary color light emitted from the emission layer. The secondary layer includes an electron transport layer (not shown) and a hole transport layer (not shown) to balance electrons and holes, and an electron injection layer to enhance injection of electrons and holes ( electron injecting layer (not shown) and hole injecting layer (hole injecting layer) (not shown) and the like, and may include one or two or more layers selected from them. The hole transport layer and the hole injection layer are made of a material having a work function that is about the middle of the pixel electrode 191 and the light emitting layer, and the electron transport layer and the electron injection layer have a work function that is about the middle of the common electrode 270 and the light emitting layer. Is made with. For example, the hole transport layer or the hole injection layer may include diamines, MTDATA ([4,4 ', 4 "-tris (3-methylphenyl) phenylamino] triphenylamine), TPD (N, N'-diphenyl-N, N'-di ( 3-methylphenyl) -1,1'-biphenyl-4,4'-diamine), 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane (1,1-bis (4-di-p -tolylaminophenyl) cyclohexane), N, N, N ', N'-tetra (2-naphthyl) -4,4 "-diamino-p-terphenyl (N, N, N', N'-tetra (2 -naphthyl) -4,4 "-diamino-p-terphenyl), 4,4 ', 4" -tris [(3-methylphenyl) phenylamino] triphenylamine (4,4', 4 "-tris [(3 -methylphenyl) phenylamino] triphenylamine), polypyrrole, polyaniline, a mixture of polyethylenedioxythiophene and polystyrenesulfonic acid (poly- (3,4-ethylenedioxythiophene: polystyrenesulfonate, PEDOT: PSS) can be used.

The organic light emitting member 370 may implement a desired color for each pixel by arranging light emitting layers emitting colors such as red, green, and blue colors for each pixel, and vertically or horizontally arrange the red, green, and blue light emitting layers on one pixel. By forming a white light emitting layer to form a color filter for implementing the colors of red, green and blue on the bottom or top of the white light emitting layer may implement a desired color. In this case, the color filter may be positioned under the emission layer in the case of the bottom emission structure, and may be positioned above the emission layer in the case of the top emission structure.

In addition to the three-color structure including the red, green, and blue pixels, the four-color structure including the red, green, blue, and white pixels may be arranged in the form of a stripe or a checkerboard to improve luminance.

The common electrode 270 is formed on the organic light emitting member 370. The common electrode 270 is formed on the entire surface of the substrate, and pairs with the pixel electrode 191 to send a current to the organic light emitting member 370.

In the organic light emitting diode display, the switching control electrode 124a connected to the gate line 121, the switching input electrode 173a connected to the data line 171, and the switching output electrode 175a are connected to the switching semiconductor 154a. ) And a switching TFT Qs, and a channel of the switching TFT Qs is formed in the switching semiconductor 154a between the switching input electrode 173a and the switching output electrode 175a. do. The driving control electrode 124b connected to the switching output electrode 175a, the driving input electrode 173b connected to the driving voltage line 172, and the driving output electrode 175b connected to the pixel electrode 191 are driven. A driving TFT Qd is formed together with the semiconductor 154b, and a channel of the driving TFT Qd is formed in the driving semiconductor 154b between the driving input electrode 173b and the driving output electrode 175b. do.

As described above, the switching semiconductor 154a is made of an amorphous semiconductor, and the driving semiconductor 155b is made of a fine crystalline or polycrystalline semiconductor. That is, the channel of the switching thin film transistor is formed in the amorphous semiconductor, and the channel of the driving thin film transistor is formed in the fine crystalline or polycrystalline semiconductor.

As described above, the channels of the switching thin film transistor and the driving thin film transistor are formed in semiconductors having different crystalline properties, thereby satisfying the characteristics required for each thin film transistor.

By forming the channel of the driving thin film transistor in the microcrystalline or polycrystalline semiconductor, the carrier thin film may have high carrier mobility and stability, thereby increasing the amount of current flowing through the light emitting device, thereby increasing luminance. In addition, by forming the channel of the driving thin film transistor in the microcrystalline or polycrystalline semiconductor, image sticking and lifespan are prevented by preventing the Vth shift caused by the continuous application of positive voltage during driving. Shortening can be prevented.

On the other hand, since the switching thin film transistor plays a role of controlling the data voltage, on / off characteristics are important, and in particular, it is important to reduce the off current. However, since the microcrystalline or polycrystalline semiconductor has a large off current, the data voltage passing through the switching thin film transistor may decrease and crosstalk may occur. Therefore, in the present invention, the switching thin film transistor is formed of an amorphous semiconductor having a small off current, thereby preventing a decrease in data voltage and reducing cross talk.

Although only one switching thin film transistor and one driving thin film transistor are shown in the present embodiment, at least one thin film transistor and a plurality of wirings for driving the same are further included, so that the organic light emitting diode (LD) and the driving transistor may be driven for a long time. It is possible to prevent or compensate for deterioration of the Qd so as to shorten the lifespan of the organic light emitting display device.

The pixel electrode 191, the organic light emitting member 370, and the common electrode 270 form an organic light emitting diode LD, and the pixel electrode 191 is an anode and the common electrode 270 is a cathode. Alternatively, the pixel electrode 191 becomes a cathode and the common electrode 270 becomes an anode. In addition, the storage electrode 127 and the driving voltage line 172 overlapping each other form a storage capacitor Cst.

Next, a method of manufacturing the OLED display illustrated in FIGS. 2 and 3 will be described in detail with reference to FIGS. 4 to 9.

4 through 9 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 2 and 3 according to an exemplary embodiment of the present invention.

As shown in FIG. 4, a gate line 121 including a switching control electrode 124a and an end portion 129 by stacking a metal layer and an impurity amorphous silicon layer or an impurity fine crystalline silicon layer on the substrate 110 and photolithography and etching the same. ), The driving voltage line 172 including the driving input electrode 173b, the driving output electrode 175b, and the ohmic contact layer 164b formed thereon.

Next, as shown in FIG. 5, an amorphous silicon layer is stacked on the substrate 110 and then photoetched together with the ohmic contact layer 164b to form the ohmic contacts 163b and 165b and the driving semiconductor 154b. . Next, the driving semiconductor 154b is crystallized by using a crystallization method such as solid phase crystallization.

Meanwhile, only the amorphous silicon layer may be stacked and crystallized, and then the ohmic contacts 163b and 165b and the driving semiconductor 154b may be formed.

Next, as shown in FIG. 6, the gate insulating layer 140, the intrinsic amorphous silicon layer, and the amorphous silicon layer doped with impurities are successively stacked on the substrate 110, the gate line 121, and the driving semiconductor 154b. The photolithography is performed to form the switching semiconductor 154a and the ohmic contact layer 164a.

Next, as illustrated in FIG. 7, a metal layer is stacked on the gate insulating layer 140 and the ohmic contact layer 164a and photo-etched to include a data line 171 including a switching input electrode 173a and an end portion 179. The switching output electrode 175a and the driving control electrode 124b are formed.

Subsequently, the ohmic contact layer 164a is etched using the switching input electrode 173a and the switching output electrode 175a as a mask to form a pair of ohmic contacts 163a and 165a.

Next, as shown in FIG. 8, the protective layer 180 is stacked on the entire surface of the substrate and photo-etched to form a plurality of contact holes 181, 182, 184, 185a, and 185b.

Next, as shown in FIG. 9, after the ITO is deposited on the passivation layer 180, photo etching is performed to form the plurality of pixel electrodes 191, the connection member 85, and the plurality of contact assistants 81 and 82. .

Next, as shown in FIGS. 2 and 3, after the photosensitive organic layer is coated on the pixel electrode 191, the connection member 85, the plurality of contact auxiliary members 81 and 82, and the passivation layer 180, exposure and development are performed. As a result, a partition 361 having a plurality of openings 365 is formed.

Subsequently, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365. The light emitting member 370 may be formed by a solution process or deposition, such as an inkjet printing method, among which an inkjet head (not shown) is moved and an opening ( Inkjet printing method of dropping the solution into the ink is preferred, followed by a drying step after the formation of each layer.

Finally, the common electrode 270 is formed on the partition 361 and the light emitting member 370.

In the method of manufacturing the organic light emitting diode display according to the exemplary embodiment of the present invention, the resistive contact members 163b and 165b are separated and completed, and the driving semiconductor 154b is crystallized to prevent the driving thin film transistor from being damaged. The characteristics of the transistor can be secured.

 Example 2

Hereinafter, another structure of the OLED display illustrated in FIG. 1 will be described in detail with reference to FIGS. 10 and 11 together with FIG. 1.

The same content as in the above-described embodiment is omitted.

FIG. 10 is a layout view of an organic light emitting diode display according to another exemplary embodiment. FIG. 11 is a cross-sectional view taken along the line XI-XI of the organic light emitting diode display of FIG. 10.

A driving semiconductor 154b made of a microcrystalline semiconductor or a polycrystalline semiconductor is formed on the insulating substrate 110.

On the substrate 110 and the driving semiconductor 154b, a plurality of gate lines 121 including a switching control electrode 124a and an end portion 129, a driving voltage line 172 including a driving input electrode 173b, and driving The output electrode 175b is formed.

A plurality of pairs of ohmic contacts 163b and 165b are formed between the driving semiconductor 154b and the driving voltage line 172 and between the driving semiconductor 154b and the driving output electrode 175b, respectively. In this case, the ohmic contacts 163b and 165b may have substantially different planar shapes from the driving voltage line 172 and the driving output electrode 175b, but may have the same planar shape.

The gate insulating layer 140 is formed on the gate line 121, the driving voltage line 172, and the driving output electrode 175b.

A plurality of switching semiconductors 154a made of hydrogenated amorphous silicon are formed on the gate insulating layer 140. The switching semiconductor 154a overlaps the switching control electrode 124a.

A data line 171 including a switching input electrode 173a and an end portion 179, a switching output electrode 175b, and a driving control electrode 124b are formed on the switching semiconductor 154a and the gate insulating layer 140. .

The switching input electrode 173a and the switching output electrode 175a partially overlap with the switching control electrode 124a and face each other with respect to the switching semiconductor 154a.

The driving control electrode 124b partially overlaps the driving semiconductor 154b on the driving input electrode 173b and the driving output electrode 175b.

A plurality of pairs of ohmic contacts 163a and 165a are formed between the switching semiconductor 154a and the switching input electrode 173a and between the switching semiconductor 154a and the switching output electrode 175a, respectively. The ohmic contacts 163a and 165a may be made of amorphous silicon in which n-type impurities such as phosphorus (P) are heavily doped.

The passivation layer 180 is formed on the data line 171, the switching output electrode 175a, and the driving control electrode 124b.

The passivation layer 180 is formed with a plurality of contact holes 185a, 184, and 182 exposing the switching output electrode 175a, the driving control electrode 124b, and the end portion 179 of the data line 171. The contact holes 181 and 185b exposing the end portion 129 of the gate line 121 and the driving output electrode 175b are formed in the 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191, a connection member 85, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180.

The pixel electrode 191 is electrically connected to the driving output electrode 175b, and the connection member 85 is connected to the switching output electrode 175a and the driving control electrode 124b.

A partition 361 having an opening 365 is formed on the pixel electrode 191, the connection member 85, and the contact auxiliary members 81 and 82.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 191 defined by the partition 361, and a common electrode 270 is formed on the partition 361 and the organic light emitting member 370. It is.

Next, a method of manufacturing the OLED display illustrated in FIGS. 10 and 11 will be described in detail with reference to FIGS. 12 to 18.

12 to 18 are cross-sectional views sequentially illustrating a method of manufacturing the organic light emitting diode display of FIGS. 10 and 11 according to an exemplary embodiment of the present invention.

As illustrated in FIG. 12, an amorphous silicon layer is stacked on the substrate 110 and then patterned by a photolithography process using a mask to form a driving semiconductor 154b.

Subsequently, as shown in FIG. 13, an amorphous silicon layer doped with impurities is stacked on the substrate 110 and the driving semiconductor 154b, and then patterned by a photolithography process using a mask to form the ohmic contacts 163b and 165b. Form.

Subsequently, the ohmic contacts 163b and 165b are completed, and the driving semiconductor 154b is crystallized using a crystallization method such as solid crystallization.

Next, as shown in FIG. 14, the gate line 121 including the switching control electrode 124a and the end portion 129 is driven by stacking a metal layer on the substrate 110 and patterning the photolithography process using a mask. The driving voltage line 172 including the input electrode 173b and the driving output electrode 175b are formed.

Next, as shown in FIG. 15, the gate insulating layer 140, the intrinsic amorphous silicon layer, and the impurity amorphous silicon layer are disposed on the substrate 110, the gate line 121, the driving voltage line 172, and the driving output electrode 175b. After sequentially stacking and photolithography to form a switching semiconductor (154a) and the ohmic contact layer (164a).

Next, as shown in FIG. 16, a metal layer is stacked on the gate insulating layer 140 and the ohmic contact layer 164a and etched to form a data line 171 including a switching input electrode 173a and an end portion 179. The switching output electrode 175a and the driving control electrode 124b are formed.

Next, the ohmic contact layer 164a is etched using the data line 171 and the switching output electrode 175a as a mask to form a pair of ohmic contacts 163a and 165a.

Next, as shown in FIG. 17, the protective layer 180 is stacked on the entire surface of the substrate and photo-etched to form a plurality of contact holes 181, 182, 184, 185a and 185b.

Next, as shown in FIG. 18, the ITO is deposited on the passivation layer 180, and then photo-etched to form the plurality of pixel electrodes 191, the connection member 85, and the plurality of contact assistants 81 and 82. .

Next, as shown in FIGS. 10 and 11, after the photosensitive organic layer is coated on the pixel electrode 191, the connection member 85, the plurality of contact auxiliary members 81 and 82, and the passivation layer 180, exposure and development are performed. As a result, a partition 361 having a plurality of openings 365 is formed.

Subsequently, a light emitting member 370 including a hole transport layer (not shown) and a light emitting layer (not shown) is formed in the opening 365.

Finally, the common electrode 270 is formed on the partition 361 and the light emitting member 370.

In the method of manufacturing the organic light emitting diode display according to the present exemplary embodiment, the resistive contact members 163b and 165b may be formed on the driving semiconductors 154b to damage the surface of the driving semiconductors 154b. By performing the process, damage to the driving semiconductor 154b can be minimized, so that the characteristics of the thin film transistor can be secured stably.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of the invention.

As described above, in the present invention, the characteristics of the driving thin film transistor can be improved by completing the ohmic contact and then crystallizing the driving semiconductor. In addition, it is possible to prevent the data voltage from being reduced in the switching thin film transistor, and to reduce the amount of current delivered to the light emitting device, shorten the lifespan, and reduce display characteristics.

Claims (8)

Stacking and patterning a metal layer and an impurity silicon layer on the substrate to form a switching control electrode, a driving voltage line, a driving output electrode and an ohmic contact layer, Forming a driving semiconductor of amorphous silicon on the driving voltage line and the driving output electrode, Etching the ohmic contact layer to complete an ohmic contact; Crystallizing the driving semiconductor; Forming a gate insulating film on the driving semiconductor; Forming a switching semiconductor on the gate insulating layer; Forming a data line, a switching output electrode, and a driving control electrode including a switching input electrode on the gate insulating layer and the switching semiconductor; Forming a first electrode connected to the driving output electrode; Forming a light emitting member on the first electrode, and Forming a second electrode on the light emitting member Method of manufacturing an organic light emitting display device comprising a. In claim 1, The driving semiconductor is etched together with the ohmic contact layer. In claim 1, The switching semiconductor is formed of amorphous silicon A method of manufacturing an organic light emitting display device. In claim 1, The crystallization may be performed by solid phase crystallization (SPC). Stacking and etching an amorphous silicon layer on the substrate to form a driving semiconductor, Stacking and etching an impurity silicon layer on the substrate and the driving semiconductor to form an ohmic contact; Crystallizing the driving semiconductor; Stacking and patterning a metal layer on the substrate to form a switching control electrode, a driving voltage line, and a driving output electrode; Forming a gate insulating film on the driving semiconductor; Forming a switching semiconductor on the gate insulating layer; Forming a data line, a switching output electrode, and a driving control electrode including a switching input electrode on the gate insulating layer and the switching semiconductor; Forming a first electrode connected to the driving output electrode; Forming a light emitting member on the first electrode, and Forming a second electrode on the light emitting member Method of manufacturing an organic light emitting display device comprising a. In claim 5, The driving semiconductor and the ohmic contact layer are etched using a separate mask. In claim 5, The switching semiconductor is formed of amorphous silicon A method of manufacturing an organic light emitting display device. In claim 5, The crystallization may be performed by solid phase crystallization (SPC).

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