KR101168147B1 - Probe pin for probe card and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a probe pin for a probe card and a method of manufacturing the same, to correspond to the fine pitch of the pads of semiconductor chips formed on the wafer, to miniaturize the pad by minimizing the area of the tip end in contact with the pad, The pin pressure can be easily adjusted and to provide good vision recognition rate when aligning the probe pin and pad of the probe card for wafer inspection. According to the present invention, the connecting portion is inserted into and connected to the via hole of the probe substrate. One end of the beam part is connected to the upper end of the connection part and extends in the horizontal direction, and a through part is formed in the center part in the horizontal direction, and has a pin pressure control bar connecting one side of the bottom of the through part and the other side of the ceiling. The contact portion is connected to the other end of the beam portion and extends upward, and has a contact tip contacting the pad of the semiconductor chip formed on the wafer. At this time, the connecting portion, the beam portion and the contact portion is formed in a thin plate shape, the contact portion is formed on both sides of the portion extending from the beam portion in the thickness direction in a horizontal or gentle inclined surface, the contact tip portion is formed sharp. The beam part may be formed in a plurality of staircases whose thickness gradually decreases from the connection part toward the contact part. At least one side portion of the contact portion connected to the contact tip may be formed to be inclined or concave so that the contact tip may be sharply formed.

Description

Probe pin for probe card and manufacturing method thereof

The present invention relates to a probe card manufacturing technology, and more particularly corresponds to the fine pitch of the pads of the semiconductor chips formed on the wafer, to miniaturize the pad by minimizing the area of the tip end in contact with the pad, A pressure pin can be easily adjusted, and a probe pin for a probe card for providing a good vision recognition rate when aligning a position between a probe pin and a pad of a probe card for wafer inspection, and a manufacturing method thereof.

As is well known, after a series of wafer fabrication processes are completed and numerous semiconductor chips are formed in the wafer, the wafer is divided into individual semiconductor chips to proceed with a package assembly process. In particular, the final process in the wafer state before the package assembly process is an electrical die sorting (EDS) process. In this case, a probe card is used as a medium for electrically connecting the semiconductor chip to be inspected and the test equipment.

A large number of input / output pads exposed to the outside are formed on the surface of the semiconductor chip, and the probe card includes a probe pin for physically contacting the pads to input and output electrical signals. The semiconductor chip receives a predetermined signal from an inspection device through a probe pin in contact with a pad, performs an operation, and then outputs the processing result back to the inspection device through a probe pin. The inspection equipment inspects the electrical characteristics of the semiconductor chip and determines whether the corresponding chip is defective.

In general, such an inspection process is performed by simultaneously contacting several probe pins to several pads of a semiconductor chip for quick and efficient inspection. However, semiconductor chips are not only miniaturized, but the number of pads is getting larger and smaller, and thus the spacing between the pads, that is, the pitch, is decreasing. Therefore, a probe card should also be manufactured by arranging a plurality of probe pins at minute intervals corresponding to pads of a semiconductor chip. As the gap between adjacent probe pins decreases, it is very difficult to form probe pins without electrical and physical interference. Moreover, precisely aligning a large number of probe pins and arranging them to a high degree of flatness is also very important but not easy in practice. In addition, there is a demand for a method of manufacturing a probe card having a simple process and an economical manufacturing cost, and a solution for poor probe pin contact due to a difference in thermal expansion coefficient with a wafer has been steadily sought.

In addition, such an inspection process may be performed in a state in which the probe pin is pressed to a pad of the semiconductor chip at a predetermined pin pressure, thereby preventing damage to the pad of the semiconductor chip while ensuring reliability of the inspection result. However, as described above, since the number of pads is increasing as the semiconductor chip is miniaturized, it is not easy to manufacture a probe pin having a target pin pressure because the probe pins are also miniaturized and the length thereof is increased.

In addition, the inspection process is a process of aligning the positions of the probe pins and pads to be contacted after recognizing the probe pins and pads with a vision device of the inspection equipment while the probe card is positioned on the wafer to be inspected. Proceed first. At this time, the vision device recognizes the position of the contact tip by using the difference of the brightness of light reflected from the end of the probe pin, that is, the contact tip. However, when the peripheral area is brighter than the brightness of the light reflected from the contact tip, the vision device may cause a problem of misrecognizing a different position of the probe pin as the contact tip instead of the contact tip.

In addition, the size of the pad area and the pitch between the pads are getting smaller due to the reduction of the line width of the semiconductor chip, so that the tip end area, which is the part of the probe pin contacting the pad, is minimized, and the probe pin can be arranged according to the fine pitch. A structure is required.

Accordingly, an object of the present invention is to provide a probe pin for a probe card and a method of manufacturing the same that can easily adjust the pin pressure of the probe pin while minimizing the deformation of the probe pin.

Another object of the present invention is to provide a probe pin for a probe card and a method of manufacturing the same that can improve the vision recognition rate of the contact tip to solve the problem caused by the misunderstanding of the contact tip.

Another object of the present invention is to minimize the size of the contact tip of the probe pin according to the fine pitch of the pad and the size of the pad of the semiconductor chip to minimize the cross-sectional area in contact with the pad and can be arranged according to the fine pitch A probe pin for a card and a manufacturing method thereof are provided.

In order to achieve the above object, the present invention provides a probe pin for a probe card including a connecting portion, a beam portion and a contact portion. The connection portion is inserted into and connected to the via hole of the probe substrate. The beam part has one end connected to an upper end of the connection part and extending in a horizontal direction, and a through part is formed at a center part in the horizontal direction, and has a pin pressure control bar connecting one side of the bottom of the through part and the other side of the ceiling. The contact part is connected to the other end of the beam part and extends upward, and has a contact tip contacting a pad of a semiconductor chip formed on a wafer.

In the probe pin for the probe card according to the present invention, the pin pressure control bar, one end is connected to the bottom of the through portion close to the connecting portion, the other end connected to the one end may be connected to the ceiling of the through portion near the contact portion. have.

In the probe pin for the probe card according to the present invention, the pin pressure control bar, the first support connected to the bottom of the through portion close to the connecting portion, and is connected to the first support and extends toward the contact portion along the through portion And a second support connected to the ceiling and connected to the ceiling of the through part close to the contact part.

In the probe pin for the probe card according to the present invention, the first and second support sides may be formed relatively thicker than the horizontal portion.

In the probe pin for the probe card according to the present invention, the pin pressure control bar may be formed to the same thickness as the beam portion of the portion where the pin pressure control bar is formed.

In the probe pin for the probe card according to the present invention, the connecting portion, the beam portion and the contact portion is formed in a thin plate shape, the contact portion is formed on both sides of the portion extending from the beam portion in the thickness direction is formed in a horizontal or gentle inclined surface, The contact tip portion may be pointed.

In the probe pin for the probe card according to the present invention, the connecting portion, the beam portion and the contact portion may be formed in a thin plate shape, and the beam portion may be formed in a step shape in which the thickness gradually decreases toward the contact portion in the contact portion.

In the probe pin for a probe card according to the present invention, at least one side portion of the contact portion connected to the contact tip is formed in an inclined surface or a concave surface so that the contact tip is sharp.

In the probe pin for a probe card according to the present invention, at least one side portion of the contact portion connected to the contact tip is formed as an inclined surface or a concave surface by at least one method of wet etching, inclined exposure, physical polishing or laser processing. The contact tip is pointed.

In the probe pin for a probe card according to the present invention, the contact portion is connected to the other end of the beam portion and the support pillar extending upward, the contact tip formed on the upper end of the support pillar, protruding from the support pillar It includes.

In the probe pin for the probe card according to the present invention, the contact tip is located in the center portion in the thickness direction of the beam portion.

In the probe pin for a probe card according to the present invention, the connecting portion connects a connection pillar inserted into and connected to a via hole of a probe substrate, and connects the connection pillar and one side of the beam portion, and is supported on an upper portion of the via hole of the probe substrate. It includes a connecting column. At this time, the connection pillar is formed in the interference connection groove spaced apart from the other via hole of the probe substrate inside the portion connecting the beam portion.

In another aspect, the present invention provides a connection part which is laminated with a plurality of metal layers and is inserted into and connected to a via hole of a probe substrate, one end of which is connected to an upper end of the connection part and extends in a horizontal direction, and a through part is formed in a center portion in the horizontal direction. A probe having a beam part having a pin pressure control bar connecting one side of the bottom of the through part and the other side of the ceiling, and a contact part having a contact tip connected to the other end of the beam part and extending upward to contact a pad of a semiconductor chip formed on the wafer Provided are a method for manufacturing a probe pin for a card.

In the method for manufacturing a probe pin for a probe card according to the present invention, the pin pressure control bar of the beam portion is connected to the bottom of the through portion close to the connecting portion, the other end connected to the one end is the through portion close to the contact portion It can be formed to be connected to the ceiling.

In the method of manufacturing a probe pin for a probe card according to the present invention, the contact tip may be sharply formed by forming at least one side portion of the contact portion connected to the contact tip to an inclined surface or a concave surface.

In the method for manufacturing a probe pin for a probe card according to the present invention, at least one side portion of the contact portion connected to the contact tip is inclined or concave by at least one method of wet etching, oblique exposure, physical polishing, or laser processing. The contact tip may be pointed to form a surface.

According to the present invention, the pin pressure of the probe pin can be easily adjusted by adjusting the length of the pin pressure adjusting bar by connecting the upper and lower beam flesh formed in the longitudinal direction of the beam part about the through part of the beam part with the pin pressure adjusting bar. In other words, the longer the length of the pin pressure adjustment bar, the lower the pin pressure of the probe pin, the shorter the pin pressure of the probe pin increases. In other words, the pin pressure can be adjusted more effectively by forming the pin pressure adjusting bar in the penetrating portion than by simply forming the penetrating portion in the beam portion to adjust the pin pressure.

The contact part of the probe pin is formed in a step shape in the range which does not affect the vision device when micro aligning the contact tip in the prober system, which is a semiconductor inspection device, and the contact tip, which is the end part, is exposed to light by using exposure. By forming sharply through etching, physical polishing or laser processing, the vision recognition rate of the contact tip can be improved to solve the problem caused by the misunderstanding of the contact tip, and the cross-sectional area of the contact tip can be minimized.

In this case, when forming the contact tip of the probe pin, the exposure is performed diagonally to form an opening having an inclination angle, and then the metal is filled in the opening to form a pointed contact tip having an inclined surface, thereby minimizing the size of the contact tip. .

Alternatively, after forming the contact part in the form of a thin and long plate, open the photosensitive film part of the part where the contact tip is to be formed, and then form a concave surface by wet etching to form a pointed contact tip, thereby minimizing the size of the contact tip. can do.

Alternatively, after forming the contact portion in the form of a thin and long plate, the end of the contact portion may be physically polished or laser processed to form a contact tip having a sharp tip, thereby minimizing the size of the contact tip.

Alternatively, when forming the contact tip of the probe pin, exposure is performed diagonally to form an opening having an inclination angle, and then a part of the contact tip is formed by filling a metal with the opening, and formed into a plate on the opposite side, and then wet etching, The size of the contact tip can be minimized by forming a contact tip with a sharp tip by oblique exposure, physical polishing or laser processing.

By forming the beam portion of the probe pin into a plurality of stepped shapes whose thickness gradually decreases from the connection portion toward the contact portion, it is possible to cope with the fine pitch of the pad.

In addition, when the probe pins having different lengths are arranged on the probe board to align the contact portions of the probe pins, an interference prevention groove is formed in the connection portion of the relatively long probe pins so that the relatively long probe pins are installed. The contact with the via hole in the upper portion can solve the problem of electrical short.

1 is a perspective view showing a probe pin for a probe card according to a first embodiment of the present invention.
FIG. 2 is a side view illustrating a shape in which a force acts on the probe pin of FIG. 1 and is deformed. FIG.
3 is a sectional view taken along the line AA in Fig.
4 to 12 are cross-sectional views illustrating respective steps according to an example of the method of manufacturing the probe pin of FIG. 1.
13 to 16 are cross-sectional views illustrating respective steps according to another example of the method of manufacturing the probe pin of FIG. 1.
17 is a cross-sectional view illustrating the probe pin for the probe card according to the second embodiment of the present invention.
18 is a cross-sectional view showing the probe pin for the probe card according to the third embodiment of the present invention.
19 is a perspective view showing a probe pin for a probe card according to a fourth embodiment of the present invention.
20 to 23 are cross-sectional views illustrating respective steps according to the method of manufacturing the probe pin of FIG. 19.
24 is a perspective view showing a probe pin for a probe card according to a fourth embodiment of the present invention.
25 is a cross-sectional view taken along the line CC of FIG. 24.
26 is a perspective view showing a probe pin for a probe card according to a fifth embodiment of the present invention.
27 to 31 are cross-sectional views illustrating respective steps according to the method of manufacturing the probe pin of FIG. 26.
32 is a perspective view illustrating a probe pin for a probe card according to a sixth embodiment of the present invention.
33 is a perspective view illustrating a probe substrate on which probe pins according to fifth and sixth embodiments of the present invention are installed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

First Embodiment

1 is a perspective view showing a probe pin 101 for a probe card according to a first embodiment of the present invention. FIG. 2 is a side view illustrating a shape in which a force acts on the probe pin 101 of FIG. 3 is a cross-sectional view taken along the line A-A of FIG.

1 to 3, the probe pin 101 for a probe card according to the first embodiment of the present invention includes a connection portion 10, a beam portion 20, and a contact portion 30. The connecting portion 10 is inserted into and connected to the via hole of the probe substrate. One end of the beam part 20 is connected to the connection part 10 at an upper end thereof and extends in the horizontal direction, and a through part 21 is formed at the center portion in the horizontal direction. In addition, the beam unit 20 includes a pin pressure adjusting bar 23 connecting one side of the bottom of the through part 21 and the other side of the ceiling. The contact portion 30 is connected to the other end of the beam portion 20 and extends upward, and has a contact tip 33 contacting the pad of the semiconductor chip formed on the wafer.

The probe pins 101 according to the first embodiment are manufactured collectively through a process of stacking and forming multilayer metal layers 32, 34, and 36. In this case, the connection part 10, the beam part 20, and the contact part 30 are formed in a thin plate shape through a process of forming the multilayer metal layers 32, 34, and 36 using a photographic process. The contact portion 30 is formed to have a thickness in which the center portion of the thickness of the contact tip 33 is located at a position corresponding to about 1/2 of the thickness of the beam portion 20 in the thickness direction, and both sides of the portion extending from the beam portion 20 are horizontal. Or a gentle slope. The contact tip 33 is sharply formed in the shape of a pyramid. The contact portion 30 is formed in a thin plate shape in a direction perpendicular to the longitudinal direction of the beam portion 20, the contact tip 33 may be formed symmetrically on both sides.

The connecting portion 10 is inserted into and connected to the probe substrate and is formed in a downward downward direction. The connection part 10 includes a connection column 12 and a connection column 14 formed at a lower portion of the connection column 12 than the connection column 12 and inserted into and connected to the via hole of the probe substrate. At this time, the connection pillar 14 is inserted into the via hole of the probe substrate so that the lower end of the connection pillar 12 is supported on the upper portion of the via hole, and the connection portion 10 is joined to the via hole of the probe substrate by a conductive adhesive such as solder. Can be.

The beam portion 20 extends in the horizontal direction with respect to the connecting portion 10. That is, the beam part 20 extends in the horizontal direction from one side of the upper portion of the connection pillar 12, and the through part 21 may be formed to extend in the horizontal direction. When the penetrating portion 21 contacts the pad of the semiconductor chip and performs the inspection process, the penetrating portion 21 provides a predetermined level of elasticity to the probe pin 101 such that the contact tip 33 stably contacts the pad while applying a predetermined pressure to the pad. Allow the process to be carried out.

In particular, the pin pressure adjusting bar 23 formed in the through part 21 of the beam part 20 adjusts the pin pressure of the probe pin 101. That is, the pin pressure is adjusted according to the position of the bottom and the ceiling of the penetrating portion 21 to which both ends of the pin pressure adjusting bar 23 are connected. For example, if the distance between both ends of the pin pressure adjusting bar 23 is far, the pin pressure falls. If the distance between both ends of the pin pressure adjustment bar 23 is close, the pin pressure increases. That is, the pressure used for the probe pin 101 during the wafer inspection process acts in a direction perpendicular to the horizontal direction in which the beam part 20 is formed. The pin pressure adjusting bar 23 formed in the through part 21 is a probe. It acts as an element supporting the force acting on the pin 101. At this time, since the distance between the both ends of the pin pressure control bar 23 is installed closer to the horizontal direction, the pin pressure control bar 23 is installed closer to the horizontal direction, the component supporting the force acting on the probe pin 101 is reduced to The pin pressure of 101 drops. On the contrary, as the distance between both ends of the pin pressure adjusting bar 23 is closer, the pin pressure adjusting bar 23 is installed closer to the vertical direction, so that the component supporting the force acting on the probe pin 101 increases and thus the probe pin is increased. The pin pressure of 101 will rise.

The pin pressure adjusting bar 23 is connected to the bottom of the penetrating portion 21 close to the connecting portion 10 so that the probe pin 101 can be elastically operated by a force acting on the contact portion 30. The other end connected to one end may be connected to the ceiling of the through part 21 close to the contact part 30. At this time, the pin pressure adjusting bar 23 is connected to the bottom of the through part 21 near the connecting part 10 and the first support part 23a and the first support part 23a are connected to the contact part along the through part 21. A horizontal support 23b extending toward 30 and a second support 23c connected to the horizontal support 23b and connected to the ceiling of the penetrating portion 21 close to the contact portion 30 are included.

The horizontal bar 23b may be formed to have relatively thicker sides of the first and second supports 23a and 23c than the center part so that the probe pin 101 may be elastically operated by an acting force.

The pin pressure adjusting bar 23 may be formed to have the same thickness as the beam portion 20 of the portion where the pin pressure adjusting bar 23 is formed.

Meanwhile, in the first embodiment, an example in which one pin pressure adjusting bar 23 is formed is disclosed, but the present invention is not limited thereto. For example, a plurality of pin pressure adjusting bars 23 may be formed in the penetrating portion 21. When the plurality of pin pressure control bars 23 are formed, they may be arranged in the longitudinal direction of the beam part 20, or the plurality of pin pressure control bars 23 may be formed to cross each other.

In addition, the pin pressure adjusting bar 23 disclosed an example in which the first support 23a is formed on the side close to the connecting portion 10 and the second support 23b is formed on the side near the contact portion 30. 23a may be formed near the contact portion 30, and the second support 23b may be formed near the contact portion 10.

In addition, the contact portion 30 has a contact tip 33 contacting the pad of the semiconductor chip formed on the wafer at an end portion formed in a vertical upward direction with respect to the beam portion 20. The contact portion 30 includes a support pillar 31 formed at a predetermined height with respect to the beam portion 20, and a contact tip 33 sharply formed on an upper portion of the support pillar 31. In particular, the contact portion 30 includes a support pillar 31 formed on both sides of the portion extending from the beam portion 20 in the thickness direction in a horizontal or gentle inclined surface, the contact tip 33 is formed at the upper end of the support pillar 31. It is sharply formed in one piece. The contact part 30 is formed in a thin plate shape in a direction perpendicular to the longitudinal direction of the beam part 20, and both sides of the contact tip 33 are formed as symmetrical or asymmetric inclined surfaces 35. Of course, the probe pins 101 are manufactured in a batch through a process of forming three metal layers.

A method of manufacturing the probe pin 101 according to the first embodiment is described below with reference to FIGS. 1 to 12. 4 to 12 are cross-sectional views illustrating respective steps according to an example of the method of manufacturing the probe pin 101 of FIG. 1. 4 to 12 are cross-sectional views taken along the line A-A in FIG. As described above, the probe pin 101 according to the first embodiment is manufactured in a batch through a process of forming three metal layers 32, 34, and 36, and particularly, FIGS. 4 to 12 show three metal layers. It is shown that the contact portion 30 including the contact tip 33 is formed in the process of forming (32, 34, 36). As the photolithography process for the vertical exposure and the oblique exposure performed in the present embodiment, a MEMS (Micro Electro Mechanical Systems) exposure process or a Liga (LIGA) LIGA (Lithographie Galvanoformung Abformung) process using X-rays may be used.

First, as shown in FIG. 4, the first photosensitive layer 50 is formed by applying a photosensitive liquid onto the base plate 40. At this time, the base plate 40 is made of a material that can be used as silicon or mandrel (Mandrel), the top surface is formed flat.

Next, after firstly exposing a predetermined region of the first photosensitive layer 40 vertically, one side boundary portion of the first exposed region is diagonally exposed. At this time, one side boundary portion is a portion where the contact tip is formed, in order to form a sharp contact tip, the contact tip is exposed in a diagonal line corresponding to the portion to be formed. In FIG. 4, the solid arrows indicate the light irradiated vertically for the primary exposure, and the dashed-dotted arrows indicate the light irradiated with the diagonal lines for the secondary exposure, and the exposure order may be different.

Next, as shown in FIG. 5, the exposed portion of the first photosensitive layer 50 is removed to form the first opening 51. In this case, it can be seen that the second exposed portion is formed of the inclined surface 53. The inclined surface 53 portion of the first opening portion 51 is formed in such a manner that the inlet is widened toward the upper surface of the first photosensitive layer 50 with respect to the upper surface of the base plate 40.

Next, as shown in FIG. 6, the first opening 51 is filled with metal to form the first metal layer 32. In this case, it can be seen that the end of the first metal layer 32 formed on the inclined surface 53 of the first photosensitive layer 50, that is, the end of the portion to be formed as the contact tip is sharply formed as the inclined surface 35. The first metal layer 32 may be formed by electroplating, electroplating, sputtering, or deposition. The process of forming the first metal layer 32 includes a process of forming a metal seed layer. The material of the first metal layer 32 is nickel (Ni), nickel-cobalt (Ni-Co), nickel-phosphorus alloy (Ni-P), nickel-tungsten alloy (Ni-W), rhodium (Rh), phosphor bronze , A conductive metal material having high toughness such as a palladium-cobalt alloy (Pd-Co), a palladium-nickel-cobalt alloy (Pd-Ni-C0), or the like may be used.

Next, as shown in FIG. 7, the second photosensitive layer 60 covering the first metal layer 32 and the first photosensitive layer 50 is formed. In this case, the second photosensitive layer 60 is a preliminary process for forming a second metal layer for reinforcing the strength of the contact tip to be formed, and may be formed to have a thickness corresponding to a portion of the semiconductor chip contacting the pad.

Next, as shown in FIG. 8, the second photosensitive layer 60 is exposed to expose the first metal layer 32 to form a second opening 61.

Next, as shown in FIG. 9, the second opening 61 is filled with metal to form the second metal layer 34. The second metal layer 34 may be a metal material such as the first metal layer 32 that is in contact with the pad of the semiconductor chip during wafer inspection, and a high hardness conductive metal material may be used. .

Next, as shown in FIG. 10, a third photosensitive layer 70 covering the second metal layer 34 and the second photosensitive film 60 is formed. In this case, the third photosensitive layer 70 may be formed to have substantially the same thickness as the first photosensitive layer 50. That is, to allow the portion of the second metal layer 34 to be positioned at the center portion of the third metal layer to be formed with the first metal layer 32. The reason is that the contact tip portion corresponding to the end of the second metal layer 32 is positioned at the center portions of the first metal layer 32 and the third metal layer, thereby removing the force acting on the contact tip during wafer inspection. By uniformly dispersing through the first metal layer 32 and the third metal layer, it is possible to perform stable wafer inspection.

Next, as shown in FIG. 11, the third opening having the inclined surface 73 opposite to the inclined surface 53 of the first opening 51 through the exposure and removal process of the third photosensitive layer 70. (71) is formed. That is, after the first exposure to correspond to the portion of the second metal layer 34 positioned outside the inclined surface 53 of the first opening 51, the first exposed region above the inclined surface 53 of the first opening 51 is exposed. The secondary exposure is carried out obliquely outward from one boundary portion of the edge. That is, the secondary exposure is carried out diagonally so as to have the inclined surface 73 opposite to the inclined surface 53 of the first opening part 51. Then, by removing the exposed portion of the third photosensitive layer 70, a third opening portion 71 symmetrical to the first opening portion 51 is formed. In this case, the inclined surface 73 portion of the third opening portion 71 is formed in a shape in which the entrance is narrowed toward the upper surface of the third photosensitive layer 70 with respect to the upper surface of the second metal layer 34. Meanwhile, in FIG. 11, the solid arrow indicates the light irradiated vertically for the primary exposure, and the dashed-dotted arrow indicates the light irradiated with the diagonal for secondary exposure.

Next, as shown in FIG. 12, the third openings 71 are filled with metal to form the third metal layer 36. In this case, the first and third metal layers 32 and 36 are symmetrically formed around the second metal layer 34, and the contact tip 33 may be sharply formed in the shape of a square pyramid. At this time, the material of the third metal layer 36 is a conductive metal having high toughness such as nickel, nickel-cobalt, nickel-phosphorus alloy, nickel-tungsten alloy, rhodium, phosphor bronze, palladium-cobalt alloy, palladium-nickel-cobalt alloy, etc. Material may be used. For example, the third metal layer 36 may use the same material as the first metal layer 32.

In addition, by removing the first to third photosensitive layers 50, 60, and 70 from the base plate 40, the probe pin 101 according to the first embodiment as shown in FIG. 1 may be separated.

As described above, the probe pin 101 according to the first embodiment is formed in a thin plate through a process of forming the multi-layered metal layers 32, 34, and 36 using a photolithography process, and the contact portion 30 has a beam portion in the thickness direction. Since both sides of the portion extending from 20 are formed in a horizontal or gentle inclined surface, and the contact tip 33 is sharply formed, the vision recognition rate of the contact tip 33 is improved, so as to misunderstand the contact tip 33. It is possible to solve the problem caused by, and to minimize the cross-sectional area of the contact tip 33. In this case, when the contact tip 33 of the probe pin 101 is formed, the exposure is performed diagonally to form the first opening 51 having the inclined surface 53, and then the metal is filled in the first opening 51. By forming the contact portion 30 including the contact tip 33, it is possible to minimize the size of the contact portion (30).

In the manufacturing method described above, an example in which the contact portion 30 of the probe pin 101 is formed by oblique exposure is disclosed, but the present invention is not limited thereto. For example, as shown in FIGS. 13 to 16, it may be formed through physical polishing or laser processing. Another example of the method for manufacturing the probe pin 101 according to the first embodiment may be manufactured by the method shown in FIGS. 1 to 9 and 13 to 16. 13 to 16 are cross-sectional views illustrating respective steps according to another example of the method of manufacturing the probe pin 101 of FIG. 1.

First, in another example of the method of manufacturing the probe pin 101 according to the first embodiment, the process of forming the third photosensitive layer 70 may be performed by the probe pin 101 according to the first embodiment of FIGS. 4 to 9. In order to proceed in the same order as an example of the method of manufacturing a) and detailed description thereof will be omitted from the step of forming the third opening (71) as follows.

Next, as shown in FIG. 13, a third opening 71 is formed to expose the second metal layer 34. Subsequently, as shown in FIG. 14, the third openings 71 are filled with metal to form the third metal layer 36.

Next, as shown in FIG. 15, the third photosensitive layer (70 of FIG. 35) is removed to expose the third metal layer 36.

Next, as shown in FIG. 16, one end of the third metal layer 36 is physically polished or laser processed to form a contact tip 33 having an inclined surface 35. That is, only the edge portion of the third metal layer 36 to be formed as the contact portion 30 is partially removed to form a pointed contact tip 33.

By removing the first and second photosensitive layers 32 and 34 from the base plate 40, the probe pins 101 according to the first embodiment as shown in FIG. 1 may be separated.

Second Embodiment

Meanwhile, in the first embodiment, an example in which the second metal layer 34 is entirely formed on the first metal layer 32 has been disclosed, but is not limited thereto. For example, as illustrated in FIG. 17, in the probe pin 102 according to the second embodiment, the second metal layer 34 may be formed only at the portion of the first metal layer 32 forming the contact portion 33. That is, when forming the second opening portion 61 in FIG. 7, only the portion of the first metal layer 32 forming the contact portion 30, not the entirety of the first metal layer 32, is exposed, and the exposed first metal layer ( By forming the second metal layer 34 only on the portion 32), the probe pin 102 according to the second embodiment can be manufactured.

Third Embodiment

Meanwhile, in the first and second embodiments, an example in which the contact tip 33 is formed by forming the second metal layer 34 in the areas where the first and third metal layers 32 and 36 are formed is disclosed. no. For example, as illustrated in FIG. 18, the contact tip 33 is formed by forming the second metal layer 34 outside the areas where the first and third metal layers 32 and 36 are formed. It may be formed to protrude relative to 36). That is, when the second opening 61 is formed in FIG. 7, the probe pin 103 according to the third embodiment is formed by forming the second opening 61 to be out of the first metal layer 32 toward the inclined surface. ) Can be prepared.

18 illustrates an example in which a second metal layer 34 is formed on a portion of the first metal layer 32, but the second metal layer 34 may be entirely formed on the first metal layer 32. Of course, a part of the second metal layer 34 protrudes toward the inclined surface 35 to form the contact tip 33.

Fourth Embodiment

19 is a perspective view showing the probe pin 104 for the probe card according to the fourth embodiment of the present invention.

Referring to FIG. 19, the probe pin 104 according to the fourth embodiment includes a connecting portion 10, a beam portion 20, and a contact portion 30, except for the contact portion 30. It has the same structure as the probe pin 101 (FIG. 1). Therefore, a description will be given of the contact portion 30 as follows.

The contact portion 30 is formed on both sides of the portion extending from the beam portion 20 in the thickness direction to a horizontal or gentle inclined surface, the contact tip 33 is sharply formed. That is, the contact portion 33 is formed in the form of a thin plate in the direction perpendicular to the longitudinal direction of the beam portion 30, one side of the contact tip 33 is formed of the inclined surface 35, the other side into the recessed surface 37 Is formed. At this time, the inclined surface 35 of the contact tip 33 is formed by oblique exposure, the concave surface 37 is formed by wet etching. Of course, the probe pin 105 is manufactured collectively through the process of forming three metal layers.

A method of manufacturing the probe pin 104 according to the fourth embodiment is described below with reference to FIGS. 19 to 23. 20 to 23 are cross-sectional views illustrating respective steps according to the method of manufacturing the probe pin 104 of FIG. 19. 20 to 23 are cross-sectional views taken along line B-B in FIG. 19. As described above, the probe pin 104 according to the fourth embodiment is manufactured in a batch through a process of forming three metal layers 32, 34, and 36, and particularly, FIGS. 20 to 23 illustrate three metal layers. It is shown that the contact portion 30 including the contact tip 33 is formed in the process of forming (32, 34, 36).

First, in the method of manufacturing the probe pin 104 according to the fourth embodiment, the process of forming the third photosensitive layer 70 may be performed through the probe pin (101 in FIG. 1) according to the first embodiment of FIGS. 4 to 10. Since it proceeds in the same order as the manufacturing method of the detailed description will be omitted from the process of forming the third opening portion 71 is as follows.

Referring to FIG. 20, a third opening 71 is formed to expose the second metal layer 34. Next, as shown in FIG. 21, the third openings 71 are filled with metal to form the third metal layer 36.

Next, as shown in FIG. 22, the fourth photosensitive layer 81 is formed to cover the third photosensitive layer 70 including the third metal layer 36. The fourth opening 83 is formed to expose a portion corresponding to the contact tip 33.

Subsequently, as shown in FIG. 23, the concave surface 37 is formed through wet etching of the third metal layer 36. That is, the portion of the contact tip 33 may be sharply formed by rounding the portion of the third metal layer 36 exposed to the fourth opening portion 83 using the isotropic etching characteristic of the wet etching.

In this case, a portion of the contact tip 33 of the third metal layer 36 may be inclined by using a physical polishing method.

By removing the first to fourth photosensitive layers 50, 60, 70, and 81 from the base plate 40, the probe pins 104 according to the fourth embodiment as shown in FIG. 19 may be separated. .

Fifth Embodiment

24 is a perspective view showing the probe pin 105 for the probe card according to the fifth embodiment of the present invention. 25 is a cross-sectional view taken along the line C-C in FIG.

24 and 25, the probe pin 105 according to the fifth embodiment includes a connection portion 10, a beam portion 20, and a contact portion 30. The probe pins 105 are manufactured collectively through a process of laminating three metal layers. In this case, the connection part 10, the beam part 20, and the contact part 30 may be formed in a thin plate shape through a process of forming a multilayer metal layer using a photographic process. In particular, the contact portion 30 and a part of the beam portion 20 adjacent to the contact portion 30 have a structure that is thinner than the other beam portion 20 and the connection portion 10. That is, the contact portion 30 and a part of the beam portion 20 adjacent to the contact portion 30 are formed by laminating the first and second metal layers 32 and 34, and the contact tip through the formation of the second metal layer 34. 33 is formed. In addition, the beam part 20 and the connection part 10 are formed through a process of forming the third metal layer 36. The first and third metal layers 32, 36 are substantially relative to the second metal layer 34 forming the contact tip 33 so that the contact tip 33 can be located at the center portion of the probe pin 105. It may be formed to the same thickness.

At this time, so that the pin pressure control bar 23 can stably adjust the pin pressure of the probe pin 105, the pin pressure control bar 23 may be formed at a position spaced apart from the thinly processed beam portion 20. Of course, a part of the pin pressure control bar 23 may be formed to the same thickness as the contact portion 30. However, it may be advantageous to adjust the pin pressure of the probe pin 105 to form the pin pressure control bar 23 to be symmetrical with respect to the longitudinal direction of the beam portion 20.

Sixth embodiment

Fig. 26 is a perspective view showing the probe pin 106 for the probe card according to the sixth embodiment of the present invention.

Referring to FIG. 26, the probe pin 106 according to the sixth exemplary embodiment includes a connection part 10, a beam part 20, and a contact part 30, but the beam part 20 is connected to the contact part at the connection part 10. It is formed in a plurality of staircases gradually decreasing in thickness toward the 30) direction. The probe pins 106 are manufactured in a batch through a process of forming a multilayer metal layer. In this case, the connection part 10, the beam part 20, and the contact part 30 are formed in a thin plate shape by forming a multilayer metal layer using a photographic process. In the sixth embodiment, the section of the beam part 20 of the first embodiment is performed. Shows an example formed of five layers.

The probe pin 106 according to the sixth embodiment may be configured as follows. The connecting portion 10 is inserted into and connected to the probe substrate and is formed in the vertical downward direction. The beam part 20 extends in the horizontal direction with respect to the connection part 10, and at least one through part 21 may be formed to extend in the horizontal direction. The pin pressure adjusting bar 23 is formed in the penetrating portion 21. And the contact portion 30 has a contact tip 33 in contact with the pad of the semiconductor chip formed on the wafer at the end formed in the vertical upward direction with respect to the beam portion 20. In particular, the connecting portion 10, the beam portion 20, and the contact portion 30 are formed in a thin plate shape, and the beam portion 20 has a plurality of stepped shapes in which the thickness gradually decreases from the connecting portion 10 toward the contact portion 30. Can be formed.

The reason why the thickness of the beam portion 20 is gradually formed from the connection portion 10 to the contact portion 30 in this manner is to cope with the fine pitch of the semiconductor chip pad. That is, by forming the thickness of the contact portion 30 thinner with respect to the connection portion 10, the gap between the contact portions 30 in contact with the pads of the semiconductor chip can be ensured, thereby coping with fine pitch of the semiconductor chip pads.

A method of manufacturing the probe pin 106 according to the sixth embodiment will now be described with reference to FIGS. 26 to 31. 27 to 31 are cross-sectional views illustrating respective steps according to the method of manufacturing the probe pin 106 of FIG. 26. Here, FIGS. 27-31 are sectional views taken on the line D-D in FIG. 26.

First, as shown in FIG. 27, the first photosensitive layer 50 is formed by applying a photosensitive liquid onto the base plate 40. Subsequently, the first opening 51 is formed by exposing and removing a predetermined region of the first photosensitive layer 50. The first opening 51 is filled with metal to form the first metal layer 32. At this time, the base plate 40 is made of silicon or stainless steel, the upper surface is formed flat.

Next, as shown in FIG. 28, the second photosensitive layer 60 is formed on the first photosensitive layer 50 including the first metal layer 32, and the photosensitive process of the second photosensitive layer 60 is performed. The second opening 61 is formed to extend to one side including the first metal layer 32. The second opening 61 is filled with metal to form the second metal layer 32 on the first metal layer 32.

Next, as shown in FIG. 29, the third photosensitive layer 70 is formed on the second photosensitive layer 60 including the second metal layer 34, and the photosensitive process for the third photosensitive layer 70 is performed. The third opening part 71 is formed to extend to one side including the second metal layer 34. The third opening 71 is filled with metal to form a third metal layer 36 on the second metal layer. In this case, the contact portion 30 is formed in the portion of the third metal layer 36 extending from the second metal layer 34.

At this time, the third metal layer 36 is shown as one metal layer for convenience of description, but the contact portion 30 formed of the third metal layer 36 is, for example, according to the probe pins 101, 102, 103, 104 according to the first to fourth embodiments. Since it has the form of the contact portion 30, it includes substantially three metal layers. In this case, the contact portion 30 may be formed in the same order as the method for manufacturing the probe pins 101, 102, 103, 104 according to the first to fourth embodiments.

Next, as shown in FIG. 30, the fourth photosensitive layer 81 is formed on the third photosensitive layer 70 including the third metal layer 36, and the photosensitive process for the fourth photosensitive layer 81 is performed. The fourth opening portion 83 is formed to expose the third metal layer 36 except for the portion of the third metal layer 36 on which the contact portion 30 is formed. The fourth opening 83 is filled with metal to form a fourth metal layer 38 on the third metal layer 36. In this case, the fourth opening portion 83 is formed in the second opening portion 61 in substantially the same shape, so that the fourth metal layer 38 corresponds to the second metal layer 34 around the third metal layer 36. Can be formed.

Subsequently, as shown in FIG. 31, a fifth photosensitive layer 85 is formed on the fourth photosensitive layer 81 including the fourth metal layer 38, and the contact portion is formed through a photolithography process on the fifth photosensitive layer 85. The fifth opening portion 87 is formed to expose the fourth metal layer 38 except for the portion of the fourth metal layer 38 on the side where the 30 is formed. The fifth opening 87 is filled with metal to form a fifth metal layer 39 on the fourth metal layer 38. In this case, the fifth opening 87 is formed in the first opening 51 in substantially the same shape, so that the fifth metal layer 39 corresponds to the first metal layer 32 with respect to the third metal layer 36. Can be formed.

At this time, the material of the first, second, fourth and fifth metal layers 32, 34, 38, 39 is nickel, nickel-phosphorus alloy, nickel-tungsten alloy, rhodium, phosphor bronze, palladium-cobalt alloy, palladium-nickel A conductive metal material having high toughness, such as a cobalt alloy, can be used. In addition, since the contact portion 30 is formed on the third metal layer 36, a high hardness conductive metal material such as tungsten, rhodium, cobalt, or the like may be used as the material of the third metal layer 30.

As described above, by sequentially forming the first to fifth metal layers 32, 34, 36, 38, and 39, the probe pin 106 according to the sixth embodiment may be manufactured. In this case, the contact portion 30 is formed in the portion of the third metal layer 36 protruding from the second and fourth metal layers 34 and 38. The beam portion 20 is formed on the neighboring side of the contact portion 30. And the connection part 10 is formed in the neighboring side of the beam part 20. FIG. That is, the connection part 10 is formed with the first to fifth metal layers 32, 34, 36, 38, and 39 are thickest compared to the beam part 20 and the contact part 30. The beam part 20 is formed in a thinner thickness in order from the connection part 10 toward the contact part 30. The contact part 30 is formed of the third metal layer 36.

Then, by removing the first to fifth photosensitive layers 32, 34, 36, 38, and 39 from the base plate 40, the probe pin 106 according to the sixth embodiment as shown in FIG. Can be.

Seventh Embodiment

Meanwhile, although the probe pin 106 according to the sixth embodiment has disclosed an example in which the connecting column 12 is formed in a plate shape having a predetermined width in the longitudinal direction of the beam part 20, the present invention is not limited thereto. For example, as shown in FIG. 32, the connection pillar 12 may form an interference preventing groove 16 inward by removing a lower edge portion connected to the beam part 20.

32 is a perspective view showing the probe pin 107 for a probe card according to the seventh embodiment of the present invention.

Referring to FIG. 32, the probe pin 107 according to the seventh embodiment has a longer length than the probe pin 106 according to the sixth embodiment, and the probe according to the sixth embodiment except for the connection unit 10. Since it has the same structure as the pin (106 of FIG. 26), it demonstrates centering around the connection part 10 as follows.

The connecting pillar 12 of the connecting portion 10 has an interference preventing groove 16 formed therein by removing the lower edge portion connected to the beam portion 20. At this time, the interference prevention groove 16 prevents the probe pin 107 from contacting the adjacent via hole when the probe pin 107 is installed in the via hole of the probe substrate. That is, since the probe pin 107 according to the seventh embodiment has a long length compared to the probe pin (106 in FIG. 26) according to the sixth embodiment, the connection pillar of the connection part 10 connected to the beam part 20 ( 12) It may also be formed in the form of an elongated plate. In this case, when the probe pin is installed in the via hole of the probe substrate, a problem may occur in that the lower end of the connection column contacts the adjacent via hole.

The connecting pillar 12 defined by the interference preventing groove 16 is formed to have a length that can be spaced apart from the via hole adjacent to the via hole where the probe pin 107 is to be installed. Of course, the connection column 12 is formed to have a length longer than the outer diameter of the via hole so that it can be stably mounted on the top of the via hole.

As described above, the probe pins 106 and 107 according to the present exemplary embodiment may be inserted into and installed on the probe substrate 90. 33 is a perspective view illustrating a probe substrate 90 on which probe pins 106 and 107 are installed according to an embodiment of the present invention.

Referring to FIG. 33, a plurality of via holes 91 may be formed in the probe substrate 90 through which a plurality of probe pins 106 and 107 may be inserted and electrically bonded. The probe substrate 90 is a printed circuit board (PCB), which includes a rigid PCB (RPC), a flexible PCB (FPCB), and a flexible flexible PCB; RFPCB), a ceramic substrate, or a combination thereof.

The probe pins 106 and 107 inserted into the via holes 91 of the probe card 90 are electrically connected to each other through a conductive adhesive. As the conductive adhesive, for example, an electrically conductive adhesive, for example, a liquid adhesive containing metal powder, solder paste, solder, or the like may be used.

On the other hand, when the probe pins 106 and 107 are inserted into the via holes 91, the connecting columns 14 may be inserted into the via holes 91 so that the connecting pillars 12 may be in close contact with the upper surface of the via holes 91. have. In this case, the probe pins 106 and 107 may stably support the probe pins 106 and 107 because the coupling pillar 12 is in close contact with the via hole 91.

In addition, in order to cope with the fine pitch of pads formed in the semiconductor chip, the via hole 91 is formed in a zigzag so that many probe pins 106 and 107 may be provided in the probe substrate 90. The zigzag via holes 91 are formed close to each other. Meanwhile, pads of a semiconductor chip are typically arranged in rows.

Therefore, the contact tips 33 of the probe pins 106 and 107 may be positioned to correspond to the pads of the semiconductor chip, and the probe pins 106 having the relatively short length may be inserted into the via holes 91. Therefore, the relatively long probe pins 107 are used together. In this embodiment, the probe pin 106 according to the sixth embodiment is used as the short probe pin 106, and the probe pin 107 according to the seventh embodiment is used as the long probe pin 107. An example is disclosed.

As described above, the zigzag via holes 91 are also formed in close proximity to each other so that a large number of probe pins 106 and 107 can be provided in the probe substrate 90. At this time, since the length of the probe pin 107 inserted into the via hole 91 at the rear is relatively long, the via hole adjacent to the via hole 91 at the position where the probe pin 107 is inserted is located at the front ( The probe pin 107 may come into contact with 91 to cause an electrical short. However, since the probe pin 107 according to the seventh embodiment has an interference preventing groove 16 formed at a portion connecting the connection pillar 12 and the beam portion 20 inserted and supported in the via hole 91, Such a problem can be prevented from occurring. That is, even if the probe pin 107 according to the seventh embodiment is installed toward the via hole 91 adjacent to the via hole 91 provided at the front side, the interference preventing groove 16 is formed, so that the probe pin 107 is positioned at the front side. The contact of the probe pin 107 with the via hole 91 can be suppressed.

As described above, since the probe pins 106 and 107 according to the present exemplary embodiment are formed in a thin plate shape, the probe pins 106 and 107 may correspond to the fine pitch of the semiconductor chip pad. In particular, in the probe pins 106 and 107 according to the sixth and seventh embodiments, the thickness of the probe pins 106 and 107 decreases as the beam part 20 goes from the connection part 10 to the contact part 30, and thus the contact part 30 is finally formed thin. It can cope with the fine pitch of the chip pad. That is, by forming the thickness of the contact portion 30 thinner with respect to the connection portion 10, the gap between the contact tips 33 in contact with the pad of the semiconductor chip can be ensured, thereby coping with fine pitch of the semiconductor chip pad.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. In addition to the embodiments disclosed herein, it is apparent to those skilled in the art that other modifications based on the technical idea of the present invention may be implemented.

10: connection part 12: connection column
14: connection pillar 20: beam portion
21: penetrating portion 23: pin pressure adjustment bar
23a: first support 23b: horizontal support
23c: second support 30: contact portion
31: support pillar 33: contact tip
35: inclined surface 37: concave surface
32: first metal layer 34: second metal layer
36: third metal layer 38: fourth metal layer
39: fifth metal layer 40: base plate
50: first photosensitive layer 51: first opening
53: slope 57: groove
60: first photosensitive layer 61: second opening
70: third photosensitive layer 71: third opening
73: inclined surface 81: fourth photosensitive layer
83: fourth opening 85: fifth photosensitive layer
87: fifth opening 90: probe substrate
91: Via Hole
101, 101, 102, 103, 104, 105, 106, 107: probe pin

Claims (16)

A connection part inserted into and connected to the via hole of the probe substrate;
A beam part having one end connected to an upper end of the connection part and extending in a horizontal direction and having a through part formed at a center portion in the horizontal direction, and having a pin pressure control bar connecting one side of the bottom of the through part and the other side of the ceiling;
A contact part connected to the other end of the beam part and extending upward and having a contact tip contacting a pad of a semiconductor chip formed on a wafer;
Probe pins for the probe card comprising a. The method of claim 1, wherein the pin pressure adjustment bar,
One end is connected to the bottom of the through portion close to the connecting portion, and the other end connected to the one end is connected to the ceiling of the through portion near the contact portion. The method of claim 1, wherein the pin pressure adjustment bar,
A first support connected to a bottom of the through part close to the connection part;
A horizontal bar connected to the first support part and extending toward the contact part along the through part;
A second support connected to the horizontal bar and connected to a ceiling of the through part close to the contact part;
Probe pins for the probe card comprising a. The method of claim 3, wherein the horizontal band
The probe pin for the probe card, characterized in that the first and second support side is formed relatively thick compared to the center portion. The method of claim 1, wherein the pin pressure adjustment bar,
Probe pin for the probe card, characterized in that formed with the same thickness as the beam portion of the portion where the pin pressure adjustment bar is formed. The method of claim 1,
The connecting portion, the beam portion and the contact portion is formed in a plate shape, the contact portion for the probe card, characterized in that both sides of the portion extending from the beam portion in the thickness direction is formed in a horizontal or inclined surface, the contact tip portion is formed sharply Probe pin. The method of claim 1,
And the connecting portion, the beam portion, and the contact portion are formed in a plate shape, and the beam portion is formed in a step shape in which the thickness gradually decreases toward the contact portion in the connecting portion. The method according to claim 6 or 7,
Probe pin for the probe card, characterized in that at least one side portion of the contact portion connected to the contact tip is formed in an inclined surface or concave surface is pointed to the contact tip. The method of claim 8,
At least one side portion of the contact portion connected to the contact tip is formed as an inclined surface or a concave surface by at least one method during wet etching, inclined exposure, physical polishing or laser processing, so that the contact tip is sharp. Probe pin. The method according to claim 6 or 7, wherein the contact portion,
A support pillar connected to the other end of the beam part and extending upward;
A contact tip formed at an upper end of the support pillar and protruding from the support pillar;
Probe pin for the probe card, characterized in that it comprises a. The method of claim 10, wherein the contact tip is
Probe pin for the probe card, characterized in that located in the center portion in the thickness direction of the beam portion. The method of claim 1, wherein the connection portion,
A connecting pillar inserted into and connected to the via hole of the probe substrate;
And a connection column connecting one side of the connection column and the beam part and supported at an upper portion of the via hole of the probe substrate.
The connecting pillar is a probe pin for the probe card, characterized in that the interference prevention groove is formed to be spaced apart from the other via hole of the probe substrate inside the portion connecting the beam portion. A plurality of metal layers stacked in order to be inserted into and connected to the via holes of the probe substrate, one end of which is connected to the upper end of the connection part and extends in the horizontal direction, and a through part is formed in the center part in the horizontal direction and one side of the bottom of the through part And a contact portion having a beam portion having a pin pressure control bar connecting the other side of the ceiling and a ceiling, and a contact portion connected to the other end of the beam portion and extending upward to contact a pad of a semiconductor chip formed on the wafer. Method for manufacturing probe pins for use. The method of claim 13,
The pin pressure control bar of the beam part may have one end connected to the bottom of the through part close to the connecting part, and the other end connected to the one end may be connected to the ceiling of the through part close to the contact part. Method of preparation. 15. The method of claim 14,
Method of manufacturing a probe pin for a probe card, characterized in that for forming at least one side portion of the contact portion connected to the contact tip to the inclined surface or concave surface to form a sharp contact tip. 16. The method of claim 15,
The at least one side portion of the contact portion connected to the contact tip is formed in an inclined surface or a concave surface by at least one method during wet etching, inclined exposure, physical polishing, or laser processing to form the contact tip sharply. Method for producing a probe pin for a probe card.

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