KR101128298B1 - Method and device for chemical leakage reinforcement of semicondutor cleaning equipment - Google Patents

Method and device for chemical leakage reinforcement of semicondutor cleaning equipment Download PDF

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KR101128298B1
KR101128298B1 KR1020100107038A KR20100107038A KR101128298B1 KR 101128298 B1 KR101128298 B1 KR 101128298B1 KR 1020100107038 A KR1020100107038 A KR 1020100107038A KR 20100107038 A KR20100107038 A KR 20100107038A KR 101128298 B1 KR101128298 B1 KR 101128298B1
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cleaning
wall
cleaning equipment
reinforcing
leak
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Korean (ko)
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김정수
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(주)썬패치테크노
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

PURPOSE: A method for reinforcing a leakage of a semiconductor-LCD chemical cleaning facility is provided to prevent damage due to cleaning solutions by discharging cleaning solutions dropped from the cleaning facility and installing a leakage reinforcement device on the bottom of the cleaning facility. CONSTITUTION: A cleaning facility is cleaned(S100). An opening is formed on the bottom of the cleaning facility(S200). A leakage reinforcement device is installed on the bottom of the cleaning facility(S300). The leakage reinforcement device discharges cleaning solutions dropped from the cleaning facility.

Description

반도체?ＬＣＤ 케미컬 세정설비의 누수 보강 방법{Method and Device for chemical leakage reinforcement of semicondutor cleaning equipment}Leak reinforcement method for semiconductor and LC chemical cleaning equipment {Method and Device for chemical leakage reinforcement of semicondutor cleaning equipment}

본 발명은 반도체 기판, 또는 LCD 기판을 세정하는 세정설비의 누수 보강 장치 및 누수 보강 방법에 관한 것이다.The present invention relates to a leak reinforcement apparatus and a leak reinforcement method of a cleaning facility for cleaning a semiconductor substrate or an LCD substrate.

반도체 디바이스와 LCD 디바이스의 고집적화가 진행될수록 제조 공정 중에서 발생하는 오염 및 환경성 오염을 제어하는 일이 제조 수율 및 제품의 품질 관리를 위해서 필수적인 것은 당연하다.As semiconductor devices and LCD devices become more integrated, it is natural to control pollution and environmental pollution occurring during the manufacturing process, which is essential for manufacturing yield and product quality control.

반도체 기판 또는 LCD 기판의 표면 오염은 제조 공정의 개시에서 완료에 이르기까지의 전 공정에 걸쳐서 발생할 수 있으며 그 오염원의 종류 또한 파티클, 유기물, 금속성 물질, 자연 산화막 등의 산화막, 손상막질 등으로 매우 다양하기 때문에 이들을 동시에 그리고 효율적으로 제거하는 것은 매우 어렵다.Surface contamination of semiconductor substrates or LCD substrates can occur throughout the entire process from the start to the completion of the manufacturing process, and the types of pollutants also vary widely from oxide films such as particles, organic materials, metallic materials, and natural oxide films, and damaged film quality. Because of this, it is very difficult to remove them simultaneously and efficiently.

현재, 가장 광범위하게 사용되고 있는 세정방법은 1970년대 미국 RCA사에서 개발한 공정으로서 APM (Ammonia hydrogen peroxide mixture) 공정, SPM (sulfuric acid hydrogen peroxide mixture) 공정 및 HPM (hydrochloric acid hydrogen peroxide mixture) 공정으로 이루어진 일련의 습식 세정공정이다. 여기서, APM 공정, SPM 공정 및 HPM 공정은 각각 파티클, 유기오염물 및 금속 오염물을 효과적으로 제거하는 공정으로서, 독립적으로 사용하거나 이들 공정을 적절하게 조합하거나 변형하여 사용한다.Currently, the most widely used cleaning method was developed by RCA in the 1970s, and consists of the Ammonia hydrogen peroxide mixture (APM) process, the sulfuric acid hydrogen peroxide mixture (SPM) process, and the hydrochloric acid hydrogen peroxide mixture (HPM) process. It is a series of wet cleaning processes. Here, the APM process, the SPM process, and the HPM process are processes for effectively removing particles, organic contaminants, and metal contaminants, respectively, or may be used independently or by combining or modifying these processes as appropriate.

그러나 이러한 세정방법에서 사용되는 세정액은 강한 산화제인 과산화수소, 불산 등을 포함하기 때문에 세정설비를 부식시키고, 종종 작업바닥으로까지 비산하여 작업환경을 저해하는 문제점이 있었다.However, the cleaning solution used in such a cleaning method contains a strong oxidizing agent such as hydrogen peroxide, hydrofluoric acid, etc., so that the cleaning equipment is corroded, often scattered to the work floor, there is a problem to inhibit the working environment.

본 발명은 반도체?LCD 케미컬 세정설비의 세정액으로부터의 피해를 예방하는 누수 보강 방법 및 장치를 제공하려는 것을 목적으로 한다.An object of the present invention is to provide a leak reinforcement method and apparatus for preventing damage from a cleaning liquid of a semiconductor LCD cleaning equipment.

상기와 같은 본 발명의 목적은, 반도체?LCD 케미컬 세정설비에 구비되어 세정액으로부터의 피해를 예방하는 누수 보강 장치에 있어서, The object of the present invention as described above, in the leak reinforcement device provided in the semiconductor LCD cleaning equipment to prevent damage from the cleaning liquid,

외부와 격리된 벽을 형성하되 상부는 개방된 보호벽(10)과,Forming a wall isolated from the outside but having an open protective wall (10) at the top;

상기 보호벽(10)의 내측 및 하부측과 간극을 갖는 보강벽(20)과,A reinforcing wall 20 having a gap with an inner side and a lower side of the protective wall 10,

상기 보호벽(10)의 내측과 보강벽(20)을 연결하여 지지하는 연결라인(30)으로 이루어진 방호벽(40)과;A barrier wall 40 formed of a connection line 30 connecting and supporting the inner side of the protective wall 10 and the reinforcing wall 20;

상기 방호벽(40)의 하부 및 보호벽(10)과 보강벽(20)의 사이에 충진되는 에폭시(50); 및An epoxy (50) filled between the lower portion of the barrier wall (40) and between the protective wall (10) and the reinforcing wall (20); And

상기 방호벽(40)과 연결되어 방호벽(40)에 축적되는 세정액을 배출하는 드레인관(60);A drain pipe 60 connected to the barrier wall 40 to discharge the cleaning liquid accumulated in the barrier wall 40;

을 포함하여 구성되는 것을 특징으로 하는 반도체?LCD 케미컬 세정설비의 누수 보강 장치에 의해 달성된다.
It is achieved by a leak reinforcement device of a semiconductor LCD cleaning equipment characterized in that it comprises a.

또한, 본 발명의 목적은, 다른 카테고리로서, 반도체?LCD 케미컬 세정설비의 누수 보강 방법에 있어서,In addition, another object of the present invention is to provide a leak reinforcement method for semiconductor and LCD chemical cleaning equipment.

상기 세정설비를 크리닝하는 단계(S100)와;Cleaning the cleaning facility (S100);

상기 세정설비의 바닥면에 형성된 개구부를 보강하는 단계(S200)와;Reinforcing the opening formed in the bottom surface of the cleaning facility (S200);

상기 세정설비에서 낙하되는 세정액을 수용하여 배출하도록 세정설비의 바닥면에 누수 보강 장치를 설치하는 단계(S300);Installing a leak reinforcing device on the bottom surface of the cleaning facility to receive and discharge the cleaning solution falling from the cleaning facility (S300);

을 포함하여 이루어지는 것을 특징으로 하는 반도체?LCD 케미컬 세정설비의 누수 보강 방법에 의해서도 달성될 수 있다.It can also be achieved by a leak reinforcement method of a semiconductor LCD cleaning equipment characterized in that it comprises a.

여기서, 상기 누수 보강 설치 단계(S300)는, 상기 세정설비의 바닥면에 방호벽을 설치하는 단계(S310)와; 상기 방호벽에 수용되는 세정액을 배출하도록 드레인을 설치하는 단계(S320)와; 상기 방호벽의 내측에 에폭시를 충진하는 단계;를 포함하여 이루어지는 것을 특징으로 한다.Here, the leak reinforcement installation step (S300), the step of installing a protective wall on the bottom surface of the cleaning equipment (S310); Installing a drain to discharge the cleaning liquid accommodated in the barrier (S320); It is characterized in that it comprises a; filling the inside of the security barrier epoxy.

본 발명에 의하면, 세정액에 의한 피해(작업환경 저해, 세정설비 부식 등)가 예방된다.According to the present invention, damage caused by the cleaning liquid (inhibition of working environment, corrosion of the cleaning equipment, etc.) is prevented.

또한, 세정설비가 어떠한 종류의 세정액을 사용하든 누수된 세정액을 원하는 장소에 안전하게 전달할 수 있는 특징이 있다.In addition, the cleaning equipment is characterized in that it can safely deliver the leaked cleaning liquid to the desired place no matter what kind of cleaning liquid.

도 1은 본 발명에 따른 반도체?LCD 케미컬 세정설비의 누수 보강 장치를 개략적으로 나타낸 도면,
도 2는 본 발명에 따른 반도체?LCD 케미컬 세정설비의 누수 보강 방법을 나타낸 순서도,
도 3은 본 발명에 따른 누수 보강 장치의 설치 순서도,
도 4 내지 도 9는 본 발명에 따른 반도체?LCD 케미컬 세정설비의 누수 보강 방법을 순서대로 도시한 도면.1 is a view schematically showing a leak reinforcement device of a semiconductor LCD cleaning equipment according to the present invention,
2 is a flow chart showing a leak reinforcement method of a semiconductor LCD cleaning equipment according to the present invention,
3 is a flow chart of installation of the leak reinforcement device according to the present invention,
4 to 9 are diagrams sequentially showing a leak reinforcement method of a semiconductor LCD cleaning equipment according to the present invention.

< 반도체?LCD 케미컬 세정설비의 누수 보강 장치(이하, '누수 보강 장치'라 함) ><Leak reinforcement device for semiconductor and LCD chemical cleaning equipment (hereinafter referred to as 'leak reinforcement device')>

본 발명에 따른 누수 보강 장치는 반도체?LCD 케미컬 세정설비(300)에 구비되어 세정액으로부터의 피해를 예방하는 장치로서, 도 1에 도시한 바와 같이 외부와 격리된 벽을 형성하되 상부는 개방된 보호벽(10)과, 상기 보호벽(10)의 내측 및 하부측과 간극을 갖는 보강벽(20)과, 상기 보호벽(10)의 내측과 보강벽(20)을 연결하여 지지하는 연결라인(30)으로 이루어진 방호벽(40)과; 상기 방호벽(40)의 하부 및 보호벽(10)과 보강벽(20)의 사이에 충진되는 에폭시(50); 및 상기 방호벽(40)과 연결되어 방호벽(40)에 축적되는 세정액을 배출하는 드레인관(60);을 포함하여 구성된다.The leak reinforcement device according to the present invention is provided in the semiconductor LCD cleaning equipment 300 to prevent damage from the cleaning liquid, as shown in FIG. 10, a reinforcing wall 20 having a gap between the inner side and the lower side of the protective wall 10, and a connection line 30 connecting and supporting the inner side of the protective wall 10 and the reinforcing wall 20. A firewall 40 made up; An epoxy (50) filled between the lower portion of the barrier wall (40) and between the protective wall (10) and the reinforcing wall (20); And a drain pipe 60 connected to the barrier wall 40 to discharge the cleaning liquid accumulated in the barrier wall 40.

구체적으로, 방호벽(40)을 이루는 보호벽(10)과 보강벽(20)과 연결라인(30)은 일체형이고, 플라스틱재(PVC 등)로 이루어져 있으며, 세정설비(300)의 하부측 바닥(301)의 상단에 설치된다.In detail, the protective wall 10, the reinforcing wall 20, and the connection line 30 constituting the protective wall 40 are integral with each other, and are made of a plastic material (PVC, etc.), and the bottom side 301 of the washing facility 300. ) Is installed on the top.

이러한 방호벽(40)은 이중 벽 형태로서 강산성의 성질을 갖는 세정액으로부터 견딜 수 있는 내구성을 갖춘 구성이다.Such a barrier wall 40 is a double wall form and has a durability that can withstand the cleaning liquid having a strong acid property.

에폭시(50)는 보호벽(10)과 보강벽(20) 사이의 틈 및 방호벽(40)의 하부에 충진되는 구성으로, 이 역시 강산성의 성질을 갖는 세정액으로부터 방호벽(40)의 내구성을 향상 및 세정설비(300)의 바닥(301)을 보호하기 위한 구성이다.The epoxy 50 is filled in the gap between the protective wall 10 and the reinforcing wall 20 and the lower portion of the protective wall 40. The epoxy 50 also improves and cleans the durability of the protective wall 40 from the cleaning liquid having a strongly acidic property. It is a structure for protecting the floor 301 of the installation 300.

드레인관(60)은 방호벽(40)에 수용되는 세정액을 외부로 배출하기 위한 구성으로, 도 1과 같이 방호벽(40)과 연결되어 있다.
The drain pipe 60 is configured to discharge the cleaning liquid contained in the barrier wall 40 to the outside, and is connected to the barrier wall 40 as shown in FIG. 1.

< 반도체?LCD 케미컬 세정설비의 누수 보강 방법(이하, '누수 보강 방법'이라 함) ><Leak reinforcement method of semiconductor and LCD chemical cleaning equipment (hereinafter referred to as 'leak reinforcement method')>

본 발명의 다른 카테고리로서, 본 발명에 따른 누수 보강 방법은 반도체?LCD 케미컬 세정설비(300)의 세정액으로부터의 피해를 예방하는 방법으로서, 도 2에 도시한 바와 같이 상기 세정설비를 크리닝하는 단계(S100)와; 상기 세정설비의 바닥면에 형성된 개구부를 보강하는 단계(S200)와; 상기 세정설비에서 낙하되는 세정액을 수용하여 배출하도록 세정설비의 바닥면에 누수 보강 장치를 설치하는 단계(S300);을 포함한다.
As another category of the present invention, the leak reinforcement method according to the present invention is a method for preventing damage from the cleaning liquid of the semiconductor LCD cleaning equipment 300, cleaning the cleaning equipment as shown in FIG. S100); Reinforcing the opening formed in the bottom surface of the cleaning facility (S200); And installing a leak reinforcing device on the bottom surface of the cleaning facility to receive and discharge the cleaning solution falling from the cleaning facility (S300).

구체적으로, 세정설비(300)를 크리닝하는 단계(S100)는,Specifically, the step of cleaning the cleaning facility 300 (S100),

도 4에 도시한 바와 같이 함몰부(301a,301b)는 급속경화형 에폭시로 도포하고, 돌출부는 장축 치공구 등을 사용하여 세정설비(300)의 바닥(301)을 평탄화 작업을 실시하는 과정 및 세정설비(300)에 고착된 스케일(S) 등을 제거하는 과정이다.As shown in FIG. 4, the recesses 301a and 301b are coated with a quick curing epoxy, and the protrusions are used to planarize the bottom 301 of the cleaning facility 300 using a long axis tool and the like. This is a process of removing the scale (S) and the like stuck to (300).

개구부를 보강하는 단계(S200)는,Reinforcing the opening (S200),

도 5에 도시한 바와 같이 세정설비(300)의 바닥(301)은 세정액 등에 의해 개구부(301a',301b')가 형성될 수 있어, 개구부를 보강하는 과정으로서, 미세한 개구부에는 오토 그립(auto grip)(312)을 주입하고, 보통 이상의 개구부에는 시트테두리를 접착한 후 급속경화형 에폭시를 주입하여 보강한다.As shown in FIG. 5, the openings 301a 'and 301b' of the bottom 301 of the cleaning facility 300 may be formed by a cleaning solution, etc., and thus reinforcing the openings. ) 312 is injected, the sheet edge is bonded to the usual openings and then reinforced by injecting a rapid curing epoxy.

누수 보강 장치를 설치하는 단계(S300)는,Installing the leak reinforcement device (S300),

상기 세정설비(300)에서 낙하되는 세정액을 수용하여 배출하도록 세정설비(300)의 바닥면에 누수 보강 장치를 설치하는 과정으로, 도 3에 도시한 바와 같이 상기 세정설비의 바닥면에 방호벽을 설치하는 단계(S310)와; 상기 방호벽에 수용되는 세정액을 배출하도록 드레인을 설치하는 단계(S320)와; 상기 방호벽의 내측에 에폭시를 충진하는 단계;를 포함한다.In the process of installing a leak reinforcement device on the bottom surface of the cleaning equipment 300 to receive and discharge the cleaning liquid falling from the cleaning equipment 300, as shown in Figure 3 to install a protective wall on the bottom surface of the cleaning equipment Step (S310); Installing a drain to discharge the cleaning liquid accommodated in the barrier (S320); It includes; filling the inside of the security barrier.

세정설비(300)의 바닥면에 방호벽을 설치하는 단계(S310)는,Installing the security barrier on the bottom surface of the cleaning equipment (300) (S310),

도 6에 도시한 바와 같이, 플라스틱재(PVC 등)로 이루어진 방호벽(40)을 세정설비(300)의 바닥(301)의 상면에 설치하는 과정이다.As shown in FIG. 6, the protection wall 40 made of plastic material (PVC, etc.) is installed on the upper surface of the bottom 301 of the cleaning facility 300.

드레인(60)을 설치하는 단계(S320)는,Installing the drain 60 (S320),

상기 방호벽(40)에 수용되는 세정액을 배출하도록 도 7에 도시한 바와 같이 방호벽(40)의 일측에 드레인(60)을 설치하는 과정이다.As shown in FIG. 7, the drain 60 is installed on one side of the barrier wall 40 so as to discharge the cleaning liquid contained in the barrier wall 40.

에폭시를 충진하는 단계는,Filling the epoxy,

상기 방호벽(40)의 내측에 에폭시(50)를 충진하는 과정으로, 1차 에폭시 충진 단계(S330)와, 2차 에폭시 충진 단계(S340)로 구분된다.In the process of filling the epoxy 50 to the inside of the barrier 40, it is divided into a primary epoxy filling step (S330), and a secondary epoxy filling step (S340).

1차 에폭시 충진 단계(S330)는, Primary epoxy filling step (S330),

방호벽(40)의 하부측에 에폭시(50)를 충진하는 과정으로, 도 8에 도시한 바와 같이 기둥의 둘레에 필요 시 외벽(70)을 설치할 수 있다.In the process of filling the epoxy 50 to the lower side of the barrier wall 40, as shown in Figure 8, the outer wall 70 can be installed if necessary around the pillar.

2차 에폭시 충진 단계(S340)은, Second epoxy filling step (S340),

방호벽(40)에 형성된 틈 및 상기 외벽(70) 설치시 외벽(70)의 내측에도 충진하여 방호벽(40) 보강 및 세정설비(300)의 구성을 세정액으로부터 보호한다.
The gap formed in the barrier wall 40 and the inside of the outer wall 70 when the outer wall 70 is installed are also filled to protect the structure of the protective wall 40 from the cleaning solution 300 from the cleaning liquid.

이상 본 발명이 양호한 실시예와 관련하여 설명되었으나, 본 발명의 기술 분야에 속하는 자들은 본 발명의 본질적인 특성에서 벗어나지 않는 범위 내에 다양한 변경 및 수정을 용이하게 실시할 수 있을 것이다. 그러므로 개시된 실시예는 한정적인 관점이 아니라 설명적인 관점에서 고려되어야 하고, 본 발명의 진정한 범위는 전술한 설명이 아니라 특허청구범위에 나타나 있으며, 그와 동등한 범위 내에 있는 모든 차이점은 본 발명에 포함된 것으로 해석되어야 할 것이다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications, and variations will readily occur to those skilled in the art without departing from the spirit and scope of the invention. Therefore, it should be understood that the disclosed embodiments are to be considered in an illustrative rather than a restrictive sense, and that the true scope of the invention is indicated by the appended claims rather than by the foregoing description, and all differences within the scope of equivalents thereof, .

10: 보호벽 20: 보강벽
30: 연결라인 40: 방호벽
50: 에폭시 60: 드레인관10: protective wall 20: reinforcing wall
30: connection line 40: firewall
50: epoxy 60: drain pipe

Claims (3)

반도체?LCD 케미컬 세정설비의 누수 보강 방법에 있어서,
상기 세정설비를 크리닝하는 단계(S100)와;
상기 세정설비의 바닥(301)에 형성된 개구부를 보강하는 단계(S200)와;
상기 세정설비에서 낙하되는 세정액을 수용하여 배출하도록 세정설비의 바닥면에 누수 보강 장치를 설치하는 단계(S300);를 포함하며,
상기 누수 보강 설치 단계(S300)는,
상기 세정설비의 바닥면에, 상부는 개방되고 외부와는 격리된 보호벽(10)과, 상기 보호벽(10)의 내측 및 하부측과 간극을 갖는 보강벽(20)과, 상기 보호벽(10)의 내측과 보강벽(20)을 연결하여 지지하는 연결라인(30)을 설치하는 방호벽(40) 설치단계(S310)와;
상기 방호벽(40)에 수용되는 세정액을 배출하도록 하는 드레인관(60)을 상기 방호벽(40)에 설치하는 단계(S320)와;
상기 방호벽(40)의 하부 및 보호벽(10)과 보강벽(20)의 사이에 에폭시를 충진하는 단계;
를 포함하여 이루어지는 것을 특징으로 하는 반도체?LCD 케미컬 세정설비의 누수 보강 방법.In the leak reinforcement method of semiconductor-LCD chemical cleaning equipment,
Cleaning the cleaning facility (S100);
Reinforcing the opening formed in the bottom 301 of the washing facility (S200);
And installing a leak reinforcing device on the bottom surface of the cleaning equipment to receive and discharge the cleaning liquid falling from the cleaning equipment (S300).
The leak reinforcement installation step (S300),
On the bottom surface of the cleaning equipment, a protective wall 10, the upper part of which is open and isolated from the outside, a reinforcing wall 20 having a gap between the inner and lower sides of the protective wall 10, and the protective wall 10 A protective wall (40) installation step (S310) for installing a connection line (30) for connecting and supporting the inner side and the reinforcing wall (20);
Installing a drain pipe (60) on the protection wall (40) for discharging the cleaning liquid contained in the protection wall (40) (S320);
Filling an epoxy between the lower portion of the barrier wall and between the protective wall and the reinforcing wall;
Leak reinforcement method of a semiconductor LCD chemical cleaning equipment comprising a. 삭제delete 삭제delete
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KR101542804B1 (en) 2013-08-01 2015-08-07 김지완 Method enhance cleaning of equipment leaks
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KR102123547B1 (en) * 2019-02-22 2020-07-07 (주)코맷 Chemical material leak blocking tray for electronic component processing equipment, and installment method of chemical material leak blocking tray for electronic component processing equipment
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