KR101092122B1 - 에칭 프로파일 제어를 위한 가스 인젝션 시스템 - Google Patents
에칭 프로파일 제어를 위한 가스 인젝션 시스템 Download PDFInfo
- Publication number
- KR101092122B1 KR101092122B1 KR1020100015999A KR20100015999A KR101092122B1 KR 101092122 B1 KR101092122 B1 KR 101092122B1 KR 1020100015999 A KR1020100015999 A KR 1020100015999A KR 20100015999 A KR20100015999 A KR 20100015999A KR 101092122 B1 KR101092122 B1 KR 101092122B1
- Authority
- KR
- South Korea
- Prior art keywords
- gas
- wafer
- gas injector
- edge
- injector
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100015999A KR101092122B1 (ko) | 2010-02-23 | 2010-02-23 | 에칭 프로파일 제어를 위한 가스 인젝션 시스템 |
CN2011100423680A CN102162099B (zh) | 2010-02-23 | 2011-02-22 | 用于蚀刻轮廓控制的气体注入系统 |
TW100105824A TWI446441B (zh) | 2010-02-23 | 2011-02-22 | 用於蝕刻輪廓控制的氣體注入系統 |
US13/032,861 US20110203735A1 (en) | 2010-02-23 | 2011-02-23 | Gas injection system for etching profile control |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100015999A KR101092122B1 (ko) | 2010-02-23 | 2010-02-23 | 에칭 프로파일 제어를 위한 가스 인젝션 시스템 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110096649A KR20110096649A (ko) | 2011-08-31 |
KR101092122B1 true KR101092122B1 (ko) | 2011-12-12 |
Family
ID=44463544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100015999A KR101092122B1 (ko) | 2010-02-23 | 2010-02-23 | 에칭 프로파일 제어를 위한 가스 인젝션 시스템 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20110203735A1 (zh) |
KR (1) | KR101092122B1 (zh) |
CN (1) | CN102162099B (zh) |
TW (1) | TWI446441B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9362137B2 (en) | 2014-08-18 | 2016-06-07 | Samsung Electronics Co., Ltd. | Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5902896B2 (ja) * | 2011-07-08 | 2016-04-13 | 東京エレクトロン株式会社 | 基板処理装置 |
US9941100B2 (en) * | 2011-12-16 | 2018-04-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle |
KR102175161B1 (ko) | 2012-01-30 | 2020-11-06 | 삼성전자주식회사 | 시점변환을 위한 예측구조에 기초한 다시점 비디오 부호화 방법 및 그 장치, 시점변환을 위한 예측구조에 기초한 다시점 비디오 복호화 방법 및 그 장치 |
WO2014179093A1 (en) * | 2013-04-30 | 2014-11-06 | Applied Materials, Inc. | Flow controlled liner having spatially distributed gas passages |
CN105529283B (zh) * | 2014-09-29 | 2020-06-30 | 盛美半导体设备(上海)股份有限公司 | 晶圆的双面气相刻蚀装置 |
CN105702600A (zh) * | 2014-11-28 | 2016-06-22 | 中国科学院微电子研究所 | 一种半导体设备进气装置 |
JP6404111B2 (ja) * | 2014-12-18 | 2018-10-10 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US9966270B2 (en) * | 2015-03-31 | 2018-05-08 | Lam Research Corporation | Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity |
JP6820736B2 (ja) * | 2016-12-27 | 2021-01-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
US20200258718A1 (en) * | 2019-02-07 | 2020-08-13 | Mattson Technology, Inc. | Gas Supply With Angled Injectors In Plasma Processing Apparatus |
CN114613655A (zh) * | 2020-12-03 | 2022-06-10 | 中国科学院微电子研究所 | 一种旋转喷洒装置、半导体反应腔室及蚀刻机 |
CN112466809B (zh) * | 2021-02-02 | 2021-06-08 | 北京中硅泰克精密技术有限公司 | 半导体工艺设备及承载装置 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2653633B1 (fr) * | 1989-10-19 | 1991-12-20 | Commissariat Energie Atomique | Dispositif de traitement chimique assiste par un plasma de diffusion. |
JP2763222B2 (ja) * | 1991-12-13 | 1998-06-11 | 三菱電機株式会社 | 化学気相成長方法ならびにそのための化学気相成長処理システムおよび化学気相成長装置 |
US5744049A (en) * | 1994-07-18 | 1998-04-28 | Applied Materials, Inc. | Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same |
TW283250B (en) * | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
TW356554B (en) * | 1995-10-23 | 1999-04-21 | Watkins Johnson Co | Gas injection system for semiconductor processing |
US6070551A (en) * | 1996-05-13 | 2000-06-06 | Applied Materials, Inc. | Deposition chamber and method for depositing low dielectric constant films |
AU3145197A (en) * | 1996-06-28 | 1998-01-21 | Lam Research Corporation | Apparatus and method for high density plasma chemical vapor deposition |
CN1186873A (zh) * | 1996-11-26 | 1998-07-08 | 西门子公司 | 带多个气体入口和独立质流控制回路的反应室的分布板 |
US6042687A (en) * | 1997-06-30 | 2000-03-28 | Lam Research Corporation | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing |
US6486081B1 (en) * | 1998-11-13 | 2002-11-26 | Applied Materials, Inc. | Gas distribution system for a CVD processing chamber |
US6263829B1 (en) * | 1999-01-22 | 2001-07-24 | Applied Materials, Inc. | Process chamber having improved gas distributor and method of manufacture |
US6206976B1 (en) * | 1999-08-27 | 2001-03-27 | Lucent Technologies Inc. | Deposition apparatus and related method with controllable edge exclusion |
KR100500246B1 (ko) * | 2003-04-09 | 2005-07-11 | 삼성전자주식회사 | 가스공급장치 |
TW200508413A (en) * | 2003-08-06 | 2005-03-01 | Ulvac Inc | Device and method for manufacturing thin films |
US20050092245A1 (en) * | 2003-11-03 | 2005-05-05 | Ahn-Sik Moon | Plasma chemical vapor deposition apparatus having an improved nozzle configuration |
US7988816B2 (en) * | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
US20080073324A1 (en) * | 2004-07-09 | 2008-03-27 | Sekisui Chemical Co., Ltd. | Method For Processing Outer Periphery Of Substrate And Apparatus Thereof |
JP4590363B2 (ja) * | 2005-03-16 | 2010-12-01 | 日本碍子株式会社 | ガス供給部材及びそれを用いた処理装置 |
JP4336680B2 (ja) * | 2006-01-10 | 2009-09-30 | 株式会社アルバック | 反応性イオンエッチング装置 |
US8097120B2 (en) * | 2006-02-21 | 2012-01-17 | Lam Research Corporation | Process tuning gas injection from the substrate edge |
JP5074741B2 (ja) * | 2006-11-10 | 2012-11-14 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
US7879250B2 (en) * | 2007-09-05 | 2011-02-01 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
US20090221149A1 (en) * | 2008-02-28 | 2009-09-03 | Hammond Iv Edward P | Multiple port gas injection system utilized in a semiconductor processing system |
-
2010
- 2010-02-23 KR KR1020100015999A patent/KR101092122B1/ko active IP Right Grant
-
2011
- 2011-02-22 CN CN2011100423680A patent/CN102162099B/zh not_active Expired - Fee Related
- 2011-02-22 TW TW100105824A patent/TWI446441B/zh not_active IP Right Cessation
- 2011-02-23 US US13/032,861 patent/US20110203735A1/en not_active Abandoned
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9362137B2 (en) | 2014-08-18 | 2016-06-07 | Samsung Electronics Co., Ltd. | Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TW201130041A (en) | 2011-09-01 |
KR20110096649A (ko) | 2011-08-31 |
US20110203735A1 (en) | 2011-08-25 |
CN102162099B (zh) | 2013-06-26 |
CN102162099A (zh) | 2011-08-24 |
TWI446441B (zh) | 2014-07-21 |
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