KR101092122B1 - 에칭 프로파일 제어를 위한 가스 인젝션 시스템 - Google Patents

에칭 프로파일 제어를 위한 가스 인젝션 시스템 Download PDF

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Publication number
KR101092122B1
KR101092122B1 KR1020100015999A KR20100015999A KR101092122B1 KR 101092122 B1 KR101092122 B1 KR 101092122B1 KR 1020100015999 A KR1020100015999 A KR 1020100015999A KR 20100015999 A KR20100015999 A KR 20100015999A KR 101092122 B1 KR101092122 B1 KR 101092122B1
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KR
South Korea
Prior art keywords
gas
wafer
gas injector
edge
injector
Prior art date
Application number
KR1020100015999A
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English (en)
Korean (ko)
Other versions
KR20110096649A (ko
Inventor
서성술
고성용
채윤숙
채환국
김기현
이원묵
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주식회사 디엠에스
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Publication date
Application filed by 주식회사 디엠에스 filed Critical 주식회사 디엠에스
Priority to KR1020100015999A priority Critical patent/KR101092122B1/ko
Priority to CN2011100423680A priority patent/CN102162099B/zh
Priority to TW100105824A priority patent/TWI446441B/zh
Priority to US13/032,861 priority patent/US20110203735A1/en
Publication of KR20110096649A publication Critical patent/KR20110096649A/ko
Application granted granted Critical
Publication of KR101092122B1 publication Critical patent/KR101092122B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1020100015999A 2010-02-23 2010-02-23 에칭 프로파일 제어를 위한 가스 인젝션 시스템 KR101092122B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020100015999A KR101092122B1 (ko) 2010-02-23 2010-02-23 에칭 프로파일 제어를 위한 가스 인젝션 시스템
CN2011100423680A CN102162099B (zh) 2010-02-23 2011-02-22 用于蚀刻轮廓控制的气体注入系统
TW100105824A TWI446441B (zh) 2010-02-23 2011-02-22 用於蝕刻輪廓控制的氣體注入系統
US13/032,861 US20110203735A1 (en) 2010-02-23 2011-02-23 Gas injection system for etching profile control

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100015999A KR101092122B1 (ko) 2010-02-23 2010-02-23 에칭 프로파일 제어를 위한 가스 인젝션 시스템

Publications (2)

Publication Number Publication Date
KR20110096649A KR20110096649A (ko) 2011-08-31
KR101092122B1 true KR101092122B1 (ko) 2011-12-12

Family

ID=44463544

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100015999A KR101092122B1 (ko) 2010-02-23 2010-02-23 에칭 프로파일 제어를 위한 가스 인젝션 시스템

Country Status (4)

Country Link
US (1) US20110203735A1 (zh)
KR (1) KR101092122B1 (zh)
CN (1) CN102162099B (zh)
TW (1) TWI446441B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362137B2 (en) 2014-08-18 2016-06-07 Samsung Electronics Co., Ltd. Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device

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WO2014179093A1 (en) * 2013-04-30 2014-11-06 Applied Materials, Inc. Flow controlled liner having spatially distributed gas passages
CN105529283B (zh) * 2014-09-29 2020-06-30 盛美半导体设备(上海)股份有限公司 晶圆的双面气相刻蚀装置
CN105702600A (zh) * 2014-11-28 2016-06-22 中国科学院微电子研究所 一种半导体设备进气装置
JP6404111B2 (ja) * 2014-12-18 2018-10-10 東京エレクトロン株式会社 プラズマ処理装置
US9966270B2 (en) * 2015-03-31 2018-05-08 Lam Research Corporation Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity
JP6820736B2 (ja) * 2016-12-27 2021-01-27 東京エレクトロン株式会社 基板処理方法および基板処理装置
US20200258718A1 (en) * 2019-02-07 2020-08-13 Mattson Technology, Inc. Gas Supply With Angled Injectors In Plasma Processing Apparatus
CN114613655A (zh) * 2020-12-03 2022-06-10 中国科学院微电子研究所 一种旋转喷洒装置、半导体反应腔室及蚀刻机
CN112466809B (zh) * 2021-02-02 2021-06-08 北京中硅泰克精密技术有限公司 半导体工艺设备及承载装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362137B2 (en) 2014-08-18 2016-06-07 Samsung Electronics Co., Ltd. Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device

Also Published As

Publication number Publication date
TW201130041A (en) 2011-09-01
KR20110096649A (ko) 2011-08-31
US20110203735A1 (en) 2011-08-25
CN102162099B (zh) 2013-06-26
CN102162099A (zh) 2011-08-24
TWI446441B (zh) 2014-07-21

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