KR101089973B1 - Plasma processing apparatus and process gas supplying apparatus - Google Patents

Abstract

The present invention performs the supply of a suitable processing gas in accordance with the processing of the FPD substrate while keeping the inside of the pipe downstream of the processing gas supply means at or below atmospheric pressure. In addition, the present invention provides a processing gas supply device 400 for supplying a processing gas to the upper electrode 300, partitions the buffer chamber 330 in the upper electrode into a central chamber and a peripheral chamber, the processing gas supply apparatus Branch pipes 404 and 406 for bifurcating the process gas from the gas box 410, flow rate adjusting means 420 and 430 for adjusting the flow rate through these branch pipes, and process gas from each branch pipe. To each of the central chamber and the peripheral chamber, and each flow rate adjusting means includes opening / closing valves 422 and 432 and fixed throttle valves 424 and 434 provided in the branch pipes. The flow rate adjusting means of the branch pipe provides the bypass pipe 404A in parallel with the on-off valve and the fixed throttle valve, and provides the open / close valve 422A in the bypass pipe.

Description

Plasma processing device and processing gas supply device {PLASMA PROCESSING APPARATUS AND PROCESS GAS SUPPLYING APPARATUS}

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a plasma processing apparatus which performs a predetermined process on a substrate for flat panel display, such as a liquid crystal display or an electro-luminescence display. A process gas supply device.

For example, in the process of forming a pattern on the surface of a substrate for flat panel display (hereinafter also referred to as "FPD substrate"), plasma processing such as etching, sputtering, CVD (chemical vapor deposition) is performed. As a plasma processing apparatus for performing such plasma processing, a parallel plate plasma processing apparatus is mentioned, for example.

This type of plasma processing apparatus includes a mounting table having a lower electrode in a processing chamber and an upper electrode serving as a processing gas introduction unit in parallel, introducing a processing gas into the processing chamber via the upper electrode, and at least on one side of the electrode. A high frequency is applied to form a high frequency electric field between the electrodes, a plasma of the processing gas is formed by the high frequency electric field, and the plasma processing is performed on the FPD substrate.

By the way, since a FPD board | substrate has a large processing area unlike a semiconductor wafer, various proposals are made | formed in order to distribute | distribute a process gas uniformly to the whole surface of a FPD board | substrate from an upper electrode. For example, as disclosed in Patent Literature 1, a partition wall partitioning the hollow portion of the upper electrode into a central chamber for ejecting the processing gas into the central region of the substrate and a peripheral chamber for ejecting the processing gas into the peripheral region is provided. For example, by connecting the branch pipes which branch the process gas from the process gas supply means constituted by a gas box provided with a gas supply source and supply them to the central chamber and the peripheral chamber, respectively, to adjust the flow rate of the processing gas flowing through each branch piping. In order to provide a flow rate adjusting means such as a mass flow controller, it is described. According to this, the process gas supplied to the center part area | region and the peripheral part area | region of a board | substrate can be made uniform by adjusting the flow volume adjusting means of each branch piping.

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-324331

By the way, since the upper electrode for performing plasma processing on a FPD board | substrate is large, the length of the branch piping connected to a center part chamber is usually shorter than the branch piping connected to a peripheral part chamber. Therefore, the branch piping connected to the central chamber has a problem that the conductance (easiness of flow) is greater than that of the branch piping connected to the peripheral chamber and the internal pressure of each branch pipe is not uniform. For this reason, it is necessary to adjust a flow volume adjusting means, and to make the conductance of the branch pipe connected to a center part chamber smaller than the conductance of the branch pipe connected to a peripheral part chamber, and to make the internal pressure of each branch pipe uniform. This point is thought to be good if the flow rate adjustment means of each branch pipe mentioned above is comprised by the massflow controller, and the flow volume of the process gas which flows through a branch pipe may be adjusted.

However, when the flow rate adjusting means of each branch pipe mentioned above is comprised by the massflow controller, since the massflow controller is also provided also in the gas box which comprises a process gas supply means, it is downstream of a gas box (downstream than a massflow controller). Side) exceeds atmospheric pressure. For this reason, if the pipe downstream of the gas box is damaged, gas may leak from the inside of the pipe. Therefore, in order to prevent this, it is necessary to devise a pipe structure, for example, by making each pipe a double structure.

This is because by configuring the flow rate adjusting means of each branch pipe, for example, a fixed throttle valve such as a needle valve, the pipe downstream of the gas box can be below atmospheric pressure, so that the gas leaks into the atmosphere even if the pipe is damaged. You can do that.

By the way, when the flow rate adjusting means of each branch pipe is comprised by the fixed throttle valve, in order to make the conductance of the branch pipe connected to a center part room smaller than the conductance of the branch pipe connected to a peripheral part room as mentioned above, it connects to a center part room. The opening of the fixed throttle valve of the branch pipe to be adjusted should be fixed. Thus, for example, when conducting FPD substrate processing by supplying a large flow rate of processing gas from only the center region of the upper electrode, sufficient conductance cannot be secured. There is a problem that the supply cannot be executed.

Thus, the present invention has been made in view of such a problem, and its object is to provide a process gas when, for example, branching the process gas from a process gas supply means such as a gas box and independently supplying the process gas to the central region and the peripheral region of the FPD substrate. The present invention provides a plasma processing apparatus and the like capable of supplying an optimum processing gas in accordance with the processing of an FPD substrate while keeping the inside of the pipe downstream of the supply means at or below atmospheric pressure.

MEANS TO SOLVE THE PROBLEM In order to solve the said subject, according to the viewpoint which this invention has, the said 1st electrode and the 2nd electrode are arrange | positioned in a process chamber, and the said process gas is introduce | transduced on the board | substrate for flat panel displays supported by the said 2nd electrode. A plasma processing apparatus for supplying a high-frequency power to one or both electrodes to generate a plasma, thereby performing a predetermined plasma processing on the flat panel display substrate, wherein the processing gas is supplied to supply the processing gas to the first electrode. An apparatus is provided, wherein the first electrode is provided with an electrode plate facing the second electrode, the electrode plate having a plurality of gas ejection holes for ejecting the processing gas toward the processing chamber, a support supporting the electrode plate, and A hollow portion formed between the electrode plate and the electrode plate in the support body and into which the processing gas is introduced; And a loop-shaped partition wall for dividing the process into a central compartment and a peripheral compartment, wherein the process gas supply device comprises a process gas supply means and each branch piping for bifurcating the process gas from the process gas supply means. And a flow rate adjusting means for adjusting a flow rate passing through each of the branch pipes, and a pipe for introducing the processing gas from each of the branch pipes into the central chamber and the peripheral chamber, respectively. An on / off valve provided in the branch pipe and a fixed throttle valve (for example, a needle valve) are provided, and the flow rate adjusting means of the branch pipe connected to the central chamber further provides a bypass pipe in parallel with the open / close valve and the fixed throttle valve. At the same time, the bypass piping is provided with a plasma processing apparatus, characterized in that the on-off valve is provided.

In order to solve the said subject, according to the other viewpoint of this invention, the said 1st electrode and the 2nd electrode are arrange | positioned in a process chamber, and the said process gas is introduce | transduced on the board | substrate for flat panel displays supported by the said 2nd electrode. In a plasma processing apparatus for supplying a high-frequency power to one or both of the electrodes to generate a plasma, the plasma processing apparatus for performing a predetermined plasma treatment on the flat panel display substrate, the processing gas supply apparatus for supplying a processing gas to the first electrode. The first electrode is provided with an electrode plate facing the second electrode, the electrode plate having a plurality of gas blowing holes for blowing the processing gas toward the processing chamber, a support for supporting the electrode plate, and the support. A hollow portion formed between the electrode plate and the processing gas introduced therein; A loop-shaped partition wall for partitioning into the sub-chamber and the periphery chamber is provided, and the process gas supply means, the branch pipes for bifurcating the process gas from the process gas supply means, and the flow rate through these branch pipes are adjusted. And a pipe for introducing the processing gas from each of the branch pipes into the central chamber and the peripheral chamber, respectively, wherein each of the flow regulating means includes an on-off valve and a fixed throttle valve provided in the branch pipes. For example, the flow rate adjusting means of the branch pipe connected to the central chamber may further include a bypass pipe in parallel with the on-off valve and the fixed throttle valve, and the bypass pipe may include an on / off valve. The processing gas supply apparatus characterized by the provision is provided.

According to the present invention, since the fixed throttle valve is used as the flow rate adjusting means provided in each branch pipe branched from the processing gas supply means, even if a mass flow controller is used as the processing gas supply means, the downstream of the processing gas supply means. The piping on the side can be held below atmospheric pressure. Thereby, even if the piping downstream of the process gas supply means is damaged, gas can be prevented from leaking into the atmosphere from the piping.

Further, since the flow rate adjusting means of each branch pipe includes an on-off valve and a fixed throttle valve, the conductance can be adjusted by adjusting the opening degree of the fixed throttle valve according to the length of each branch pipe. Thus, for example, the pipe length is shorter than that of the branch pipe connected to the peripheral chamber of the first electrode, and by adjusting the opening degree of the fixed throttle valve of the branch pipe connected to the central chamber, the internal pressure of each branch pipe is uniformly adjusted. Therefore, the processing gas can be uniformly supplied from the central chamber and the peripheral chamber of the first electrode.

In addition, since the flow rate adjusting means of the branch pipe connected to the central chamber of the first electrode includes a bypass pipe, the branch pipe is processed so that the opening / closing valve is controlled to be supplied to the central chamber through the bypass pipe without passing through the fixed throttle valve. The flow of gas can be switched. Thereby, sufficient conductance can be ensured even when supplying a process gas only from a central part chamber, for example. Thus, according to this invention, while maintaining the piping downstream of a process gas supply means below atmospheric pressure, it can supply the process gas suitable according to the process of the FPD board | substrate.

In this case, an inert gas supply pipe may be connected between the on-off valve and the fixed throttle valve to the flow rate adjusting means of the branch pipe connected to the peripheral part chamber, and the on / off valve may be provided on the inert gas supply pipe. According to this, since only a process gas can be supplied from the center part chamber of a 1st electrode, and only an inert gas can be supplied from a peripheral part chamber, the uniformity of the process of a FPD board | substrate can be improved more.

Further, each of the flow rate adjusting means provides a plurality of bypass pipes in parallel with the on-off valve and the fixed throttle valve, respectively, and provides an on-off valve and a fixed throttle valve on the bypass pipe, respectively. The fixed throttle valve of the flow regulating means may adjust the opening degree so as to have different conductance ratios, respectively. According to this, it is a combination of piping through which a process gas passes by passing the process gas to a desired piping by controlling the opening / closing valve of each flow volume adjusting means, and it is desired from the branch piping to the center part chamber of the 1st electrode, and the peripheral part chamber from each branch piping. The processing gas of the flow rate of can be supplied. By this, while maintaining the piping downstream of the processing gas supply means at or below atmospheric pressure, it is possible to control the uniformity of the flow rate of the processing gas supplied to the central region and the peripheral region of the FPD substrate in accordance with the processing of the FPD substrate. .

Further, a rectifying member may be provided at a discharge port opening from the respective branch pipes to the hollow portion of the gas introduction hole introduced into the central portion chamber and the peripheral portion chamber to change the flow of gas discharged to the hollow portion in the horizontal direction. According to this, the inside of a hollow part can be spread | diffused more widely and uniformly. Thereby, process gas can be sprayed more uniformly from each gas blowing hole.

According to the present invention, the optimum processing gas can be supplied in accordance with the processing of the FPD substrate while the inside of the pipe downstream of the processing gas supply means is kept below atmospheric pressure.

EMBODIMENT OF THE INVENTION Preferred embodiment of this invention is described in detail, referring an accompanying drawing below. In addition, in the specification and drawings, the redundant description is omitted by attaching the same reference numerals to components having substantially the same functional configuration.

(Configuration example of plasma processing device)

First, a plasma processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. 1 is an external perspective view of a plasma processing apparatus of a multi-chamber type. The plasma processing apparatus 100 shown in FIG. 1 includes a plurality of (for example, three) processing chambers 200 for performing plasma processing on a flat panel display substrate (FPD substrate) S. As shown in FIG.

In the processing chamber 200, for example, a mounting table on which the FPD substrate S is mounted is provided, and an upper electrode serving as a shower head for introducing a processing gas (for example, a process gas) is provided above the mounting table. In each process chamber 200, the same process (for example, an etching process etc.) may be performed, and different processes (for example, an etching process, an ashing process, etc.) may be performed. In addition, the specific structural example in the process chamber 200 is mentioned later.

Each process chamber 200 is connected to the side surface of the conveyance chamber 110 of polygonal cross-sectional shape (for example, rectangular cross section) via the gate valve 102, respectively. In addition, a load lock chamber 120 is connected to the transfer chamber 110 via a gate valve 104. The substrate loading / unloading mechanism 130 is provided adjacent to the load lock chamber 120 via the gate valve 106.

Two indexers 140 are provided adjacent to the substrate loading / unloading mechanism 130, respectively. The indexer 140 is equipped with a cassette 142 for accommodating the substrate S for FPD. The cassette 142 is configured to accommodate a plurality of (eg, 25) FPD substrates S.

When plasma processing is performed on the FPD substrate S by the plasma processing apparatus, the FPD substrate S in the cassette 142 is first loaded into the load lock chamber 120 by the substrate loading / unloading mechanism 130. At this time, if the processed FPD board | substrate S exists in the load lock chamber 120, the processed FPD board | substrate S is carried out from inside the load lock chamber 120, and the unprocessed FPD board | substrate S is carried out. Replace with. When the FPD substrate S is loaded into the load lock chamber 120, the gate valve 106 is closed.

Next, after depressurizing the inside of the load lock chamber 120 to a predetermined degree of vacuum, the gate valve 104 between the transfer chamber 110 and the load lock chamber 120 is opened. After the FPD substrate S in the load lock chamber 120 is loaded into the transfer chamber 110 by a transfer mechanism (not shown) in the transfer chamber 110, the gate valve 104 is closed.

In the conveyance chamber 110, after depressurizing to a higher degree of vacuum than in the load lock chamber 120 which further reduced pressure, the gate valve 102 is opened. And the unprocessed FPD board | substrate S is carried in to the lower electrode which also serves as the mounting table in the process chamber 200. At this time, if there is a processed FPD substrate S, the processed FPD substrate S is taken out and replaced with an unprocessed FPD substrate S.

In the processing chamber 200, a plasma is generated between the lower electrode and the upper electrode, and the processing gas is introduced into the processing chamber via the upper electrode, thereby performing a predetermined plasma treatment on the substrate S for FPD.

(Configuration example of the processing chamber)

Next, the specific structural example of the process chamber 200 is demonstrated, referring drawings. Here, the structural example of the processing chamber at the time of applying the plasma processing apparatus of this invention to the apparatus which etches the glass substrate (henceforth simply a "substrate" for a liquid crystal display) as a board | substrate for FPD here, for example is demonstrated. . 2 is a cross-sectional view illustrating a schematic configuration of the processing chamber 200.

The process chamber 200 shown in FIG. 2 is provided with the processing chamber 202 of the substantially prismatic shape which made the surface the aluminum whose surface was anodized (anodized), for example. The processing container 202 is divided into two parts up and down in the vicinity of the upper end, and the upper part of the processing container 202 can be opened and closed to facilitate the internal maintenance. In addition, the processing container 202 is grounded.

In the processing container 202, a mounting table 210 having a lower electrode 212 as an example of the second electrode is disposed at the bottom thereof. Above this mounting table 210, the upper electrode 300 as an example of the 1st electrode which serves as a gas introduction part is arrange | positioned through the clearance gap. The upper electrode 300 is connected to the high frequency power supply 208 via a matcher 206. From this high frequency power supply 208, a high frequency power of 13.56 MHz is applied to the upper electrode 300, for example.

On the outside of the processing container 202, a processing gas supply device 400 for supplying a processing gas for performing a predetermined process such as film formation, etching, or the like to the substrate S is disposed. The processing gas supply device 400 supplies the processing gas from the gas box 410 constituting the processing gas supply means into the processing chamber 200. The gas box 410 is provided with a process gas supply source, and an on-off valve and a mass flow controller are provided in the piping of the process gas supply source. The flow rate of the process gas from the process gas supply source is adjusted by the massflow controller and supplied from the gas box 410. In addition, the gas box 410 may be provided with a some process gas supply source. In this case, an on-off valve and a mass flow controller may be provided in the piping of each processing gas supply source, and the downstream side of these piping may be joined to supply the mixed processing gas from the gas box 410. In addition, the specific structural example of the gas box 410 is mentioned later.

An exhaust path 240 is connected to the side wall of the processing container 202, and a vacuum exhaust means 242 is connected to the exhaust path 240. In addition, a carry-in and out port 250 for carrying in / out of the substrate S is provided on the sidewall of the processing container 202, and the carry-in / out port 250 is the gate valve ( 102 is opened and closed.

In such a processing chamber 200, by supplying a processing gas from the processing gas supply device 400 into the processing chamber 200 and applying high frequency power to the upper electrode 300, the lower electrode 212 and the upper electrode 300. Plasma of the processing gas is generated between the layers), and plasma processing such as etching, ashing, and film formation can be performed on the substrate S mounted on the mounting table 210.

The lower electrode 212 is supported by the support part 216 via an insulating material 214. In the central part of the lower surface of the support portion 216, a protective tube 218 extending downward through the opening 204 formed in the bottom wall of the processing container 202 is provided.

The lower surface of the protective tube 218 is supported by a conductive support plate 220 having a larger diameter than the protective tube 218. The support plate 220 is attached to the protective tube 218 to block the inside of the tube of the protective tube 218. The lower end of the conductive bellows body 222 is fixed around the support plate 220. The upper end of the bellows body 222 is fixed around the opening of the opening 204 of the processing container 202.

The bellows body 222 hermetically partitions the internal space in which the protective tube 218 is disposed and the atmospheric space. In addition, the support plate 220 is provided with a lifting mechanism not shown. The mounting table 210 can be raised and lowered by elevating the supporting plate 220 by this elevating mechanism. The lower electrode 212 is connected to the support plate 220 via the conductive path 213. As a result, the lower electrode 212 is electrically connected to the processing container 202 via the conductive path 213, the support plate 220, and the bellows body 222, and grounded.

In addition, the lower electrode 212 of the mounting table 210 and the processing container 202 may be electrically connected through an impedance adjusting unit. Specifically, for example, the impedance adjustment unit is connected between the lower electrode 212 and the support plate 220 with a conductive line. As a result, one end of the impedance adjustment unit is connected to the lower electrode, while the other end is electrically connected to the bottom of the processing container 202 via the support plate 220 and the bellows sieve 222. By adjusting the impedance value by this impedance adjusting unit, the generation of plasma can be suppressed between the upper electrode 300 to which the high frequency power supply is connected and the sidewall of the processing container 202.

On the other hand, the upper electrode 300 is mounted on the upper inner surface of the processing container 202 via a frame body 302 made of an insulating member, and on the upper wall of the processing container 202, for example, via a plurality of bolts 230. It is hanging. Specifically, the insulator 232 is attached to the hole formed in the upper wall of the processing container 202, and the upper electrode 300 is fixed by inserting the bolt 230 into the insulator 232. Moreover, you may use the bolt in which the surface was insulated.

Moreover, the upper electrode 300 also has a function as a gas introduction part which blows out predetermined gas toward the surface of the FPD substrate S mounted on the mounting table 210, and constitutes a so-called shower head. As shown in FIG. 2, the upper electrode 300 is provided with the gas diffusion buffer chamber which consists of a rectangular hollow part. A plurality of gas ejection holes 312 are evenly disposed on the entire surface of the lower surface of the upper electrode 300 (the surface facing the lower electrode), and the process gas is entirely distributed in the process chamber 200 from the gas ejection holes 312. To the downflow.

Specifically, the upper electrode 300 has a rectangular electrode plate 310 in which the gas ejection holes 312 are formed, and is formed in substantially the same shape as the electrode plate 310, so that the upper surface of the electrode plate 310 is formed. An electrode support 320 which supports the side detachably is provided. The electrode plate 310 and the electrode support 320 are made of, for example, aluminum whose surface is anodized. In addition, the number and arrangement | positioning of the gas blowing hole 312 are not limited to what is shown in FIG.

The electrode support 320 is formed with a rectangular space portion constituting the buffer chamber 330. This space part is formed so that it may open in the edge part (bottom surface) of the electrode support body 320, and the said space part is closed by attaching the electrode plate 310 to the bottom surface of the electrode support body 320. As shown in FIG.

In the space where the buffer chamber 330 of the electrode support 320 is formed, the inner wall of the upper surface of the electrode support 320 forming the space is suspended via a plurality of suspension support members 360. The suspension support member 360 is made of, for example, aluminum whose surface is anodized and stainless used steel (SUS). The suspension support member 360 is fixed to the upper wall of the electrode support 320 with a fastening member 364 such as a bolt.

In addition, the suspension supporting member 360 may be fixed to the electrode plate 310 by the fastening member 364. A flange portion is provided on the suspension supporting member 360 to fasten the flange portion and the electrode plate to the fastening member 364. May be separately fixed by fastening members such as bolts.

Thus, not only the electrode plate 310 is attached to the edge (bottom surface) of the electrode support body 320 but also suspended by the suspension support member 360 also in the buffer chamber 330 of the electrode support body 320. Even the large electrode plate 310 can be attached to the electrode support 320 so as not to bend or deform due to its own weight.

The buffer chamber 330 of the electrode support 320 is formed of a plurality of chambers (eg, a first chamber 332 in the center and a second chamber 334 in the periphery thereof) by a loop wall (frame). ]. In addition, a plurality of gas introduction holes 326 are provided on the upper wall of the electrode support 320. The branch pipes of the processing gas supply device 400 are connected to these gas introduction holes 326 so that the processing gas from the processing gas supply device 400 is introduced under flow rate control for each chamber 332 and 334. have.

For example, as shown in FIG. 2, the processing gas from the gas box 410 passes through the flow rate adjusting means 420 through one branch pipe 404 branched into two from the gas box 410 and passes through the first chamber ( 332). The processing gas passing through the other branch pipe 406 is introduced into the second chamber 334 via the flow rate adjusting means 430. The process gas supplied to each chamber 332, 334 is flow-controlled by flow rate adjusting means 420, 430, respectively.

In this way, by individually controlling the flow rate of the processing gas introduced from the chambers 332 and 334 toward the substrate S, the gas flow rate in the entire region of the substrate S is increased even if the substrate S has a large area. Equalization can be achieved, and further, plasma treatment can be uniformized.

(Example of piping configuration of processing gas supply device)

Here, an example of the piping configuration of such a processing gas supply device 400 will be described with reference to the drawings. 3 is a view of the electrode support 320 seen from below when the electrode plate 310 is removed. 4 is a schematic diagram showing an appearance of the processing gas supply device 400. 5 is a block diagram illustrating a piping configuration of the processing gas supply device 400. In addition, in FIG. 3 and FIG. 5, the piping structure of the process gas supply apparatus 400 is conceptually shown by the diagram.

Here, the case where five gas introduction holes 326 are formed in the electrode support body 320 is demonstrated. Specifically, one gas introduction hole 326 is disposed in the center of the electrode support 320, and one gas introduction hole 326 is disposed in each of four vicinity. These five gas introduction holes 326 are arranged symmetrically in the longitudinal direction and the transverse direction, respectively.

The partition wall 350 shown in FIG. 3 is a specific example when it forms in the frame shape similar to the buffer chamber 330. As shown in FIG. The upper and lower surfaces of the partition wall 350 are provided with sealing members such as, for example, an O-ring (not shown) in accordance with the frame portion of the partition wall 350. According to this partition wall 350, the buffer chamber 330 is partitioned into a first chamber 332 in the center and a second chamber 334 in the periphery surrounding the outside of the first chamber 332.

Since the partition wall 350 is held between the inner surface of the upper wall of the electrode support 320 and the electrode plate 310, the partition wall 350 can be easily separated by removing the electrode plate 310 from the electrode support 320. Interchangeable with 350. The partition wall 350 shown in FIG. 3 is formed in a loop shape such that the area of the first chamber 332 becomes about 25% of the area of the entire buffer chamber 330. When partitioned by such a partition wall 350, the first chamber 332 introduces a processing gas from a central gas introduction hole 326, and the second chamber 334 has four gases near four corners. Treatment gases are introduced from the introduction holes 326, respectively.

When the processing gas is introduced into the gas introduction holes 326 arranged in this way, the processing gas supply device 400 is configured as shown in FIGS. 3 and 4. That is, the process gas supply pipe 402 shown in FIG. 3 is a branch pipe 404 which introduces a process gas into the gas introduction hole 326 of the 1st chamber 332, and the gas introduction of the 2nd chamber 334. As shown in FIG. It branches to two of the branch pipes 406 for introducing the processing gas into the holes 326. Each branch pipe 404, 406 is provided with flow rate adjusting means 420, 430.

The branch pipe 404 is connected to the central gas introduction hole 326 via the flow rate adjusting means 420. Further, the branch pipes 406 branch into four on the downstream side of the flow rate adjusting means 430, and each of these branch pipes 406a to 406d is connected to four gas introduction holes 326 near each of the four. do. Specifically, as shown in FIG. 4, the branch pipe 406 branches into two further downstream of the on / off valve 432 and the flow regulator 434, and one pipe is branched to the branch pipes 406a and 406b. Branching is performed, and the other pipe is branched into branch pipes 406c and 406d. It is not limited to such a piping structure, The branch piping 406 may branch into four radially downstream from the on-off valve 432 and the flow regulator 434. As shown in FIG.

The flow rate adjusting means 420, 430 is constituted, for example, by on / off valves 422, 432 provided upstream and flow rate regulators 424, 434 provided downstream. By these flow rate adjustment means 420 and 430, the flow volume of the process gas introduced into the process chamber 200 from the 1st chamber 332 and the 2nd chamber 334 can be controlled separately.

The gas box 410 is configured as shown in FIG. 5, for example. Here, the case where the 4 types of gas (1st gas, 2nd gas, 3rd gas, inert gas) is comprised so that supply is possible through gas supply piping 510A-510D is taken as an example. Among these gases, the first gas, the second gas, and the third gas are, for example, C, such as a fluorocarbon fluorine compound as an etching gas, CF ₄ , C ₄ F ₆ , C ₄ F ₈ , C ₅ F _8, and the like. _X F _Y gas. In addition, these gases may include, for example, an O ₂ gas as a gas for controlling the depot of the CF-based reaction product. In addition, the inert gas may be, for example, a rare gas (for example, Ar gas) as a carrier gas, or may be, for example, an N ₂ gas used as a purge gas. In addition, the number of gas supply sources is not limited to the example shown in FIG. 5, For example, one or two may be sufficient, and four or more may be provided.

Thus, the gas supply piping 510A-510C of the 1st gas, 2nd gas, and 3rd gas used as etching gas is similarly comprised. That is, each of the gas supply pipes 510A to 510C includes gas supply sources 520A to 520C for the first gas, the second gas, and the third gas, respectively, and each gas supply source 520A to 520C is each a gas supply pipe. It connects so that it may join the process gas supply piping 402 via 510A-510C.

The gas supply pipes 510A to 510C of the gas supply pipes 510A to 510C have a flow rate controller, for example, a mass flow controller (MFC) 540A to 540C for adjusting the flow rate of the gas from the gas supply sources 520A to 520C. Is provided. Here, the mass flow controllers (MFCs) 540A to 540C may use different capacities.

Upstream and downstream sides of each massflow controller (MFC) 540A to 540C, respectively, include a first shutoff valve (upstream shutoff valve) 530A to 530C and a second shutoff valve (downstream side shutoff valve) 550A to 550C. ) Is provided. By closing both the 1st shutoff valves 530A-530C and the 2nd shutoff valves 550A-550C, the flow of gas in each massflow controller (MFC) 540A-540C can be interrupted | blocked. Thereby, for example, the flow rate of the gas actually passing through each massflow controller (MFC) 540A to 540C can be adjusted to zero.

5, hand valves 522A to 522C are provided between the gas supply sources 520A to 520C and the first shutoff valves (upstream shutoff valves) 530A to 530C. In addition, although not shown in figure, between the hand valves 522A-522C and the 1st shutoff valve (upstream cutoff valve) 530A-530C, you may provide a pressure reduction valve (regulator) and a pressure gauge PT.

On the other hand, the gas supply pipe 510D of the inert gas (for example, N ₂ gas) includes a gas supply source 520D of the inert gas, and the inert gas from the gas supply source 520D is converted into each other gas supply pipe 510A to the other. The mass flow controller (MFC) 540A to 540C of the 510C and the second shut-off valves 550A to 550C can be supplied into the processing chamber 200. As a result, since the mass flow controllers (MFCs) 540A to 540C can be used for the N ₂ gas, it is not necessary to provide the mass flow controllers (MFCs) individually. Moreover, it is also possible to supply to the process chamber 200 via the process gas supply piping 402, without passing through each of these gas supply piping 510A-510C.

Specifically, the gas supply source 520D of the inert gas is connected to the processing gas supply pipe 402 via the second shutoff valve 550D by the gas supply pipe 510D, and the shutoff valves 560A to 560C. The first shutoff valves 530A to 530C and the mass flow controllers (MFCs) 540A to 540C of the respective gas supply pipes 510A to 510C are connected via the respective ones.

In addition, the hand valve 522D and the first shutoff valve (upstream shutoff valve) 530D are connected to the gas supply pipe 510D similarly to the other gas supply pipes 510A to 510C. When the flow rate of the inert gas is controlled by the mass flow controllers (MFCs) 540A to 540C, the first shutoff valves (560A to 560C) are provided on the upstream side of the massflow controller (MFC). Upstream side shut-off valve).

In the processing gas supply device 400 having such a configuration, the processing gas mixed at a predetermined gas flow rate passes through the processing gas supply pipe 402 by controlling each valve in the gas box 410 and the MFC. 200). At this time, the flow rate adjusting means 420, 430 can separately control the flow rate of the processing gas introduced into the process chamber 200 from the first chamber 332 and the second chamber 334.

For example, in order to supply gas uniformly from the upper electrode 300 toward the FPD board | substrate S, the branch piping 404 connected to the center gas introduction hole 326, and four gas introduction holes of four near each of them. It is necessary to make the internal pressure of the pipe of the branch pipe 406 connected to 326 uniform. However, since the upper electrode 300 for performing plasma processing on the FPD substrate S is large, the length of the branch pipe 404 connected to the first chamber 332 in the center portion is the second chamber 334 in the peripheral portion. Since it becomes shorter than the branch piping 406 connected to), conductance (easiness of flow) also becomes large. For this reason, the flow regulators 424 and 434 are adjusted to make the flow rate of the processing gas flowing through the branch pipe 404 less than the flow rate of the processing gas flowing through the branch pipe 406, and thus, the pipes of the branch pipes 404 and 406. The internal pressure must be uniform.

In addition, the partition wall 350 of the upper electrode 300 is not limited to what is shown in FIG. For example, the processing gas supply device 400 may be applied to the upper electrode 300 provided with the partition wall 350 as shown in FIG. 6. The partition wall 350 shown in FIG. 6 has a loop shape so that the area of the 1st chamber 332 becomes larger than the partition wall 350 shown in FIG. According to the partition wall 350 shown in FIG. 6, the area of the first chamber 332 is about 50% of the area of the entire buffer chamber 330.

In addition, as in the partition wall 350 shown in FIG. 6, the number of gas introduction holes 326 included in the region of each chamber 332, 334 to be partitioned is made into a loop shape so as to be the same as the case shown in FIG. Thereby, only the compartment area of the buffer chamber 330 can be changed, without changing the piping structure of the process gas supply apparatus 400. FIG.

By the way, the above-mentioned flow regulators 424 and 434 can also be configured as a mass flow controller, for example. However, if the flow rate regulators 424 and 434 are configured as mass flow controllers, the mass flow controllers 540A to 540C are also provided in the gas box 410, so that the downstream side of the gas box 410 (massflow controller 540A). 540C), the downstream side exceeds the atmospheric pressure. For this reason, if the pipe downstream of the gas box 410 is damaged, gas may leak from the inside of the pipe into the atmosphere. Therefore, in order to prevent this, the pipe structure must be devised such as, for example, each pipe in a double structure.

Thus, in the present embodiment, the flow regulators 424 and 434 are constituted by, for example, fixed throttle valves such as needle valves, so that the downstream side of the gas box 410 is below atmospheric pressure, and even if the pipe is damaged, the gas is in the atmosphere. Don't leak. When the flow rate regulators 424 and 434 are constituted by fixed throttle valves, the fixed throttle is reduced so that the flow rate of the processing gas flowing through the branch pipe 404 becomes smaller than the flow rate of the processing gas flowing through the branch pipe 406 as described above. Fix with valve opening adjusted. For example, when the opening degree of the fixed throttle valve is 0 and the opening time 10 is 10, the flow rate regulators 424 are each such that the conductance ratio of the branch pipe 404 and the branch pipe 406 is 3:10. 434 adjusts the opening of the fixed throttle valve.

However, when the opening degree of the fixed throttle valve constituting the flow rate regulator 424 of the branch pipe 404 is adjusted and fixed, for example, a large flow rate of processing gas is supplied from only the center region of the upper electrode 300 to supply the FPD substrate. There is a problem that the supply of the optimum processing gas cannot be performed in accordance with the processing of the FPD substrate S, for example, when sufficient conductance cannot be secured when the processing of (S) is desired. For this reason, for example, the bypass piping which does not pass through the flow regulator 424 is provided in parallel with the flow regulator 424, and the flow of a process gas can be switched to a bypass piping, and a large flow volume is passed through a bypass piping. It is desirable to be able to supply the processing gas of.

Specific examples of such piping configuration will be described in detail with reference to the drawings. It is a figure which shows the specific example of the piping structure provided with a bypass piping. In this case, the bypass pipe 404A is provided in parallel with the flow rate regulator 424 of the branch pipe 404. The bypass pipe 404A is provided with an on-off valve 422A, and can be switched between when the processing gas passing through the branch pipe 404 flows through the flow regulator 424 and when it flows through the bypass pipe 404A. It is supposed to be.

In this case, for example, when the opening degree of the fixed throttle valve is 0 and the opening time is 10, the flow rate is set so that the conductance ratio of the branch pipe 404 and the branch pipe 406 is 3:10. The opening degree of the fixed throttle valve which comprises the regulators 424 and 434 is adjusted and fixed. In addition, the opening degree of a fixed throttle valve is not limited to said case. The conductance ratio is calculated in advance so that the internal pressure of the branch pipe 404 and the branch pipe 406 becomes uniform according to the length of the branch pipe 404 and the branch pipe 406, and the opening degree of the fixed throttle valve so as to be the conductance ratio. It is desirable to adjust.

According to the processing gas supply device 400 having such a piping configuration, for example, when it is desired to uniformly supply the processing gas from the central region and the peripheral region of the upper electrode 300, the opening / closing valve 432 is opened. By opening / closing the valve 422 and closing the valve 422A, the processing gas flows through the flow regulator 434 to the branch pipe 406 and simultaneously flows through the flow regulator 424 to the branch pipe 404. The processing gas may be allowed to flow.

On the other hand, when it is desired to supply a large flow rate of processing gas from only the center region of the upper electrode 300, the closing valve 432 is closed and the closing valve 422 is closed to open the opening and closing valve 422A. By doing so, the processing gas may flow from the branch pipe 404 via the bypass pipe 404A without flowing the processing gas into the branch pipe 406.

According to this, even when the opening degree of the fixed throttle valve which comprises the flow regulator 424 of the branch piping 404 is adjusted and fixed, only from the center area | region of the upper electrode 300 via the bypass piping 404A. It is possible to supply a large flow rate of processing gas.

In addition, in the branch piping 406 in the piping configuration shown in FIG. 7, for example, as shown in FIG. 8, an inert gas (for example, Ar gas, He) between the on-off valve 432 and the flow rate regulator 434. An inert gas supply pipe 408 for supplying a gas or the like) may be further connected. In this case, the open / close valve 409 is provided in the inert gas supply pipe 408 so that only the inert gas is supplied from the peripheral region of the upper electrode 300.

That is, only the inert gas can be supplied from the peripheral region of the upper electrode 300 by closing the open / close valve 432 and opening the open / close valve 409. Thereby, the processing gas is supplied from the center region of the upper electrode 300 and the inert gas is supplied from the peripheral region, thereby improving the uniformity of the processing of the FPD substrate.

Such an inert gas may be comprised so that it may be supplied directly to the inert gas supply piping 408 shown in FIG. 7 from the gas supply piping 510D of the inert gas in the gas box 410 shown in FIG. 5, for example, and FIG. The gas supply flow path may be provided in a separate system from the gas supply pipes 510A to 510D shown in the drawing, and may be directly supplied to the inert gas supply pipe 408.

In addition, although the case where the bypass piping 404A was provided only in the branch piping 404 was demonstrated in FIG. 7 and FIG. 8, it is not necessarily limited to this, Not only the branch piping 404 but also the branch piping 406. ) May be provided with bypass piping.

In this case, for example, as illustrated in FIG. 9, in the branch pipe 404, a plurality of (for example, two) bypass pipes 404A and 404B are provided in parallel with the flow regulators 424, respectively. The open / close valves 422A and 422B and the flow rate regulators 424A and 424B may be provided in the pipes 404A and 404B, respectively. In addition, a plurality of (for example, two) bypass pipes 406A and 406B are provided in the branch pipe 406 in parallel with the flow regulators 434, respectively, and on / off valves are provided in these bypass pipes 406A and 406B, respectively. 432A and 432B and flow regulators 434A and 434B may be provided.

And the combination of piping which controls and controls each on-off valve 422, 422A, 422B by adjusting the conductance ratio by fixing the opening degree of the fixed throttle valve of the flow regulators 424, 424A, 424B to different openings, respectively. Thus, a plurality of types of flow rates can flow through the branch pipe 404.

Similarly, with respect to the opening degree of the fixed throttle valves of the flow regulators 434, 434A, and 434B, the on / off valves 432, 432A, 432B are controlled to flow by fixing the conductance ratios by fixing them at different openings. A plurality of types of flow rates can flow to the branch pipe 406 by the combination of the pipes.

Specifically, when the opening of the fixed throttle valve is 0 and the opening is 10, the opening of the fixed throttle valve of the flow regulators 424, 424A, 424B is 10: 5: 2.5. In addition, the opening degree of the fixed throttle valve of the flow regulators 434, 434A, and 434B is 10: 5: 2.5, for example. Thereby, the combination of the conductance ratio of the process gas which flows through the branch piping 404 and the branch piping 406 can be made more.

For example, the branching pipe 404 controls the opening and closing valves 422A by closing the open / close valves 422 and 422B so that the processing gas passes only through the flow rate regulator 424A, and the processing gas in the branch pipe 406. Control the opening / closing valves 432 by closing the opening / closing valves 432A and 432B to pass through only the flow regulator 434, the conductance ratio of the branch piping 404 and the branch piping 406 is set to 5:10. Can be. In this case, the branch pipe 404 controls the opening and closing valves 422A and 422B to be closed by closing the opening and closing valve 422 so that the processing gas passes only through the flow regulators 424A and 424B. The conductance ratio between the 404 and the branch pipe 406 may be set to 7.5: 10.

In this way, the combination of piping through which the processing gas passes by controlling the on / off valves and passing the processing gas through the desired piping, is desired from the branch piping to the first chamber 332 in the center and the second chamber 334 in the peripheral section. The processing gas of the flow rate of can be supplied. Thereby, the uniformity of the process gas flow volume supplied to the center part area | region and the peripheral part area | region of the board | substrate S according to the process of the board | substrate S can be controlled.

The gas introduction holes 326 of the upper electrode 300 may be provided with a rectifying member for changing the flow of the discharged gas in the horizontal direction at the discharge port 327 opening to the buffer chamber 330. For example, as shown in FIGS. 10A and 10B, the disk-shaped rectifying member 328 is suspended from the periphery of the discharge port 327 by a plurality of (for example, four) suspension supporting members 329. 11A and 11B, a disk-shaped rectifying member 328 having a plurality of holes extending in the horizontal direction from the center may be attached to the discharge port 327 of each gas introduction hole 326. . In addition, the gas blowing hole 312 is abbreviate | omitted in the electrode plate 310 shown to FIG. 10A and FIG. 11A.

By doing so, the process gas introduced from each gas introduction hole 326 is supplied toward the horizontal direction by the action of the rectifying member 328, so that the inside of the buffer chamber 330 can be diffused more uniformly and more widely. Thereby, process gas can be blown off more uniformly from the gas blowing hole 312 of the electrode plate 310.

In particular, since the rectifying member 328 of the present embodiment has a compact structure that can be provided for each discharge port 327 of each gas introduction hole 326, a plurality of rectifying members 328 are formed as partition walls 350 within the buffer chamber 330. Even when partitioning into the yarns 332 and 334, it can be provided without being disturbed. For this reason, the rectifying member 328 can be provided in the discharge port 327 of each gas introduction hole 326 irrespective of the shape (for example, FIG. 3, FIG. 6, etc.) of the partition wall 350. As shown in FIG. In addition, in each of the chambers 332 and 334 of the buffer chamber 330 partitioned by the partition wall 350 as in the present embodiment, the process gas introduced from each gas introduction hole 326 is diffused more widely. You can. The shape and size of such rectifying member 328 are not limited to those mentioned above. For example, the shape and size of the rectifying member 328 may be determined depending on the arrangement of the gas introduction holes 326, the arrangement of the gas blowing holes 312, the shape of the partition wall 350, and the like.

In addition, although the case where the partition wall 350 in this embodiment was provided so that replacement was easy was demonstrated, it is not limited to this, The partition wall 350 is a some bolt in the upper wall of the electrode support body 320. FIG. It may be fixed with screws.

As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the related example. It will be apparent to those skilled in the art that various modifications or modifications can be made within the scope described in the claims, and that it naturally belongs to the technical scope of the present invention.

For example, although this embodiment demonstrated the case where this invention was applied to the plasma processing apparatus of the type which grounds a lower electrode and applies a high frequency electric power only to an upper electrode, it is not necessarily limited to this. For example, it may be applied to a plasma processing apparatus of a type that applies high frequency power to both the upper electrode and the lower electrode, or may be applied to a plasma processing apparatus of a type that applies, for example, two other types of high frequency power of high frequency to only the lower electrode. .

INDUSTRIAL APPLICABILITY The present invention is applicable to a plasma processing apparatus that performs a predetermined process on an FPD substrate and a processing gas supply apparatus used therefor.

1 is an external perspective view of a plasma processing apparatus according to an embodiment of the present invention;

2 is a cross-sectional view of a processing chamber in the embodiment of the present invention;

3 is a view for explaining a piping configuration example of a processing gas supply device;

4 is a perspective view showing an outline of an appearance of a processing gas supply device shown in FIG. 3;

FIG. 5 is a block diagram showing the piping configuration shown in FIG. 3; FIG.

6 is a view for explaining a piping configuration example of a processing gas supply device when applied to an upper electrode having another partition wall;

7 is a block diagram showing a specific example of a flow rate adjusting means provided with a bypass pipe in an embodiment of the present invention;

8 is a block diagram showing another specific example of the flow rate adjusting means provided with the bypass piping in the embodiment of the present invention;

9 is a block diagram showing still another specific example of the flow rate adjusting means provided with the bypass pipe in the embodiment of the present invention;

10A is a longitudinal sectional view showing a specific example of a rectifying member that can be installed in each gas introduction hole of an upper electrode;

10B is a cross-sectional view along the line A-A shown in FIG. 10A;

11A is a longitudinal sectional view showing another specific example of the rectifying member that can be installed in each gas introduction hole of the upper electrode;

FIG. 11B is a cross-sectional view taken along the line B-B shown in FIG. 11A. FIG.

Explanation of the sign

100: plasma processing apparatus 102: gate valve

104: gate valve 106: gate valve

110: transfer room 120: load lock room

130 substrate import and export mechanism 140 indexer

142: cassette 200: processing chamber

202 processing vessel 204 opening

206: matcher 208: high frequency power supply

210: mounting table 212: lower electrode

213: conductive path 214: insulating material

216: support portion 218: protective tube

220: support plate 222: bellows body

230: Bolt 232: Insulator

240: exhaust passage 242: vacuum exhaust means

250: carrying in and out 300: upper electrode

302: frame 310: electrode plate

312 gas blowing hole 320 electrode support

326: gas introduction hole 327 discharge port

328: rectifying member 329: suspension support member

330: buffer chamber 332: first chamber (center chamber)

334: 2nd room (peripheral room) 350: Partition wall

360: suspension support member 364: fastening member

400: processing gas supply unit 402: processing gas supply pipe

404, 406: branch piping 404A, 404B: bypass piping

406a to 406d: branch piping 406A, 406B: bypass piping

408: inert gas supply pipe 409: on-off valve

410: gas box 420, 430: flow rate adjusting means

422, 422A, 422B: On / Off Valve

424, 424A, 424B: Flow regulator (fixed throttle valve)

430: flow rate adjusting means 432, 432A, 432B: on-off valve

434, 434A, 434B: Flow regulator (fixed throttle valve)

510A to 510D: Gas Supply Pipe 520A to 520D: Gas Supply Source

522A to 522D: Hand Valve 530A to 530D: First Shutoff Valve

540A-540C: Massflow Controller

550A-550D: 2nd shutoff valve 560A-560C: shutoff valve

S: substrate (FPD substrate)

Claims (7)

Placing the first electrode and the second electrode in the processing chamber so as to face each other, supplying a high-frequency power to one or both of the electrodes while introducing a processing gas onto the flat panel display substrate supported by the second electrode to generate plasma In the plasma processing apparatus for performing a predetermined plasma treatment on the flat panel display substrate, Providing a processing gas supply device for supplying a processing gas to the first electrode, The first electrode opposes the second electrode, an electrode plate having a plurality of gas ejection holes for ejecting the processing gas toward the processing chamber, a support for supporting the electrode plate, and the support on the support. A hollow portion formed between the electrode plate and the processing gas introduced therein, and a partition wall having a loop shape for partitioning the hollow portion into a central chamber and a peripheral chamber, The process gas supply device includes a process gas supply means, each branch pipe for bifurcating the process gas from the process gas supply means, a flow rate adjusting means for adjusting a flow rate passing through the branch pipes, and the respective branch pipes. Pipes for introducing a process gas of the gas into the central chamber and the peripheral chamber respectively; The flow rate adjusting means includes an on-off valve and a fixed throttle valve provided in the branch pipes. The flow rate adjusting means of the branch pipe connected to the central chamber provides a bypass pipe that allows the processing gas to pass through the fixed throttle valve in parallel to the on-off valve and the fixed throttle valve, and simultaneously The on-off valve is provided in the piping, characterized in that Plasma processing apparatus. The method of claim 1, An inert gas supply pipe is connected between the on-off valve and the fixed throttle valve to a flow rate adjusting means of the branch pipe connected to the peripheral part chamber, and the on / off valve is provided on the inert gas supply pipe. Plasma processing apparatus. The method according to claim 1 or 2, Each of the flow rate adjusting means provides a plurality of bypass pipes in parallel with the on-off valve and the fixed throttle valve, respectively, and provides an on-off valve and a fixed throttle valve on each of the bypass pipes, respectively. The fixed throttle valves have their openings adjusted to have different conductance ratios. Plasma processing apparatus. The method according to claim 1 or 2, The rectifying member which changes the flow of the gas discharged | emitted to the said hollow part in the horizontal direction is provided in the discharge port opening to the said hollow part of the gas introduction hole which introduces into the said central part chamber and the said peripheral part chamber from each branch piping. Plasma processing apparatus. The method according to claim 1 or 2, The fixed throttle valve is characterized in that the needle valve Plasma processing apparatus. Placing the first electrode and the second electrode in the processing chamber so as to face each other, supplying a high-frequency power to one or both of the electrodes while introducing a processing gas onto the flat panel display substrate supported by the second electrode to generate plasma In the plasma processing apparatus for performing a predetermined plasma processing on the flat panel display substrate, In the processing gas supply apparatus for supplying a processing gas to the first electrode, The first electrode opposes the second electrode, an electrode plate having a plurality of gas ejection holes for ejecting the processing gas toward the processing chamber, a support for supporting the electrode plate, and the support on the support. A hollow portion formed between the electrode plate and the processing gas introduced therein, and a loop-shaped partition wall for partitioning the hollow portion into a central chamber and a peripheral chamber, The center of the process gas supply means, each branch pipe which bisects the process gas from the process gas supply means, flow rate adjusting means which adjusts the flow rate passing through the branch pipes, and the process gas from the branch pipes And a pipe introduced into the inlet chamber and the peripheral compartment, respectively. The flow rate adjusting means includes an on-off valve and a fixed throttle valve provided in the branch pipes. The flow rate adjusting means of the branch pipe connected to the central chamber provides a bypass pipe that allows the processing gas to pass through the fixed throttle valve in parallel to the on-off valve and the fixed throttle valve, and simultaneously The on-off valve is provided in the piping, characterized in that Process gas supply. The method of claim 6, The rectifying member which changes the flow of the gas discharged | emitted to the said hollow part in the horizontal direction is provided in the discharge port opening to the said hollow part of the gas introduction hole which introduces into the said central part chamber and the said peripheral part chamber from each branch piping. Process gas supply.

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