CN105551995A - Inflation air channel of vacuum chambers and semiconductor processing equipment - Google Patents
Inflation air channel of vacuum chambers and semiconductor processing equipment Download PDFInfo
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- CN105551995A CN105551995A CN201410604096.2A CN201410604096A CN105551995A CN 105551995 A CN105551995 A CN 105551995A CN 201410604096 A CN201410604096 A CN 201410604096A CN 105551995 A CN105551995 A CN 105551995A
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Abstract
The invention provides an inflation air channel of vacuum chambers and semiconductor processing equipment. The inflation air channel of the vacuum chambers is used for realizing inflation of at least two vacuum chambers and comprises an inflation main circuit and inflation branch circuits connected in series, the inflation main circuit is provided with a first on-off valve for controlling the on-off of the inflation main circuit, the first on-off valve is provided with a slow-charging bypass in parallel, the slow-charging bypass is provided with a throttle valve used for controlling the air flow of the slow-charging bypass to control the speed of slow charging, the inflation branch circuits are communicated with the vacuum chambers in a corresponding manner, and each inflation branch circuit in parallel is provided with a second on-off valve used for controlling the on-off of the inflation branch circuit which the second on-off valve belongs to. According to the inflation air channel of the vacuum chambers, the technical problem of a large number of devices of the whole inflation air channel is solved, the structural size can be reduced, and the cost can be lowered; and in the condition of inflating more vacuum chambers, the size and the cost can be reduced more obviously.
Description
Technical field
The invention belongs to semiconductor equipment manufacturing technology field, be specifically related to a kind of inflation gas circuit and semiconductor processing equipment of vacuum chamber.
Background technology
In semiconductor processing technology field, the processing environment high vacuum environment often of wafer, therefore, for realizing the transmission of wafer in vacuum environment and atmospheric environment, then semiconductor equipment often needs to arrange the transition chamber thereof that can fill air and vacuumize.
Fig. 1 is the structure diagram of semiconductor equipment, this semiconductor equipment comprises the loading chamber 10, transmission chamber 11 and the processing chamber 12 that connect successively, and between adjacent two chambers, be also provided with the family of power and influence 13 being communicated with for controlling it or disconnecting, wherein, processing chamber 12 is the vacuum chamber that wafer S machining needs, and loads chamber 10 and transmission chamber 11 all as the transition chamber thereof that wafer S transmits between atmospheric environment and the vacuum environment of processing chamber 12; Fill air for satisfying the demands adopt inflation gas circuit 14 to completing the loading chamber 10 that vacuumizes and transmission chamber 11, as shown in Figure 2, this inflation gas circuit 14 comprise an inflation main road 1 and with loading chamber 10 and transmission chamber 11 two inflation branch roads 2 and 3 one to one, inflation main road 1 is provided with pressure regulating valve PR, for regulating in the pressure of nitrogen to rational scope; Inflation branch road 2 is provided with pneumatic operated valve V2, this pneumatic operated valve V2 is for controlling the break-make of its place gas circuit, and, on inflation branch road 2, the two ends of pneumatic operated valve V2 have been arranged in parallel trickle charge bypass 4, this trickle charge bypass 4 is provided with pneumatic operated valve V1 and needle-valve NV along gas transport direction, pneumatic operated valve V1 is for controlling the break-make of this trickle charge bypass 4, and needle-valve NV is for controlling the trickle charge speed of trickle charge bypass 4.Need to open pneumatic operated valve V1 during trickle charge at loading chamber 10 and close pneumatic operated valve V2, when it needs to fill soon, open pneumatic operated valve V2 and close pneumatic operated valve V1, when it does not need inflation, then closing pneumatic operated valve V1 and V2 simultaneously.Because the structure of every bar inflation branch road is identical, as shown in Figure 2, the corresponding trickle charge bypass 4 of trickle charge bypass 5, therefore, no longer corresponding to transmission chamber inflation branch road 3 is described,
But, the above-mentioned gas circuit to loading chamber and transmission chamber inflation is adopted inevitably to there is following technical problem in actual applications: because each inflation branch road includes pneumatic operated valve V1, V2 and a needle-valve NV, namely each inflation branch road is provided with each inflation branch road of control and fills the valve switched with trickle charge soon, this makes the number of devices of whole inflation gas circuit more, thus not only cause structural volume comparatively large, but also cause cost higher; Further, time if desired to more vacuum chamber inflation, then the problem that volume is comparatively large and cost is high can be caused more significantly.
Summary of the invention
The present invention is intended to solve the technical problem existed in prior art, provide a kind of inflation gas circuit and semiconductor processing equipment of vacuum chamber, the technical problem that the number of devices of whole inflation gas circuit is more can be solved, thus not only can reduce structural volume, but also can reduce costs; And, when needs are inflated more vacuum chamber, volume can be reduced more significantly and reduce costs.
The invention provides a kind of inflation gas circuit of vacuum chamber, for realizing at least two described vacuum chamber inflations, comprise inflation main road and the inflation branch road of series connection, wherein on described inflation main road, be provided with the first on-off valve, described first on-off valve is for controlling the break-make of described inflation main road; Be arranged in parallel trickle charge bypass at the two ends of described first on-off valve, described trickle charge bypass is provided with choke valve, described choke valve is for controlling described trickle charge bypass gas flow amount to control the speed of trickle charge; And described inflation branch road is communicated with described vacuum chamber one_to_one corresponding, every bar inflation branch road of parallel connection is provided with the second on-off valve, and described second on-off valve is for controlling the break-make of the described inflation branch road at its place.
Wherein, described inflation main road is also provided with pressure regulating valve, described pressure regulating valve is positioned at the upstream position of described first on-off valve.
Wherein, described first on-off valve and/or the second on-off valve are pneumatic operated valve.
Wherein, described choke valve is needle-valve.
The present invention also provides a kind of semiconductor processing equipment, it comprises inflation gas circuit and the loading chamber, transmission chamber, the processing chamber that are connected by the family of power and influence successively, described inflation gas circuit is used for realizing described loading chamber and the inflation of described transmission chamber, and described inflation gas circuit adopts the inflation gas circuit that the invention provides above-mentioned vacuum chamber.
Wherein, described semiconductor processing equipment is semiconductor etching device or semiconductor deposition equipment.
Wherein, also comprise unloading chamber, described inflation gas circuit is used for realizing inflating described loading chamber, described transmission chamber and described unloading chamber
The present invention has following beneficial effect:
The inflation gas circuit of vacuum chamber provided by the invention, it arranges the first on-off valve by inflation main road, and is arranged in parallel trickle charge bypass at the two ends of the first on-off valve, and trickle charge bypass is provided with choke valve; And every bar inflation branch road arranges the second on-off valve, can be implemented in when needing to inflate certain vacuum chamber, the second on-off valve only opened on inflation branch road corresponding with it just can realize trickle charge, opens the first on-off valve and can fill soon it; When if desired multiple vacuum chamber being inflated, open the second corresponding with it on-off valve just can realize carrying out trickle charge simultaneously, open the first on-off valve can realize filling soon, the inflation gas circuit of the vacuum chamber thus adopting the present embodiment to provide can realize inflating each vacuum chamber simultaneously.As from the foregoing, the inflation gas circuit of the vacuum chamber that the present embodiment provides compared with prior art, can realize under the prerequisite that each vacuum chamber is inflated, only need to arrange the first on-off valve and choke valve on inflation main road, valve and trickle charge choke valve is filled soon to realize inflation main road being provided with each inflation branch road of control, and can save above-mentioned valve and the trickle charge choke valve of filling soon is set on every bar inflation branch road, only on-off valve is set on every bar inflation branch road, thus the technical problem that the number of devices of whole inflation gas circuit is more can be solved, thus not only can reduce structural volume, but also can reduce costs, and, when needs are inflated more vacuum chamber, volume can be reduced more significantly and reduce costs.
Semiconductor processing equipment provided by the invention, it adopts the inflation gas circuit of vacuum chamber provided by the invention, thus can the more technical problem of the number of devices of whole inflation gas circuit, thus not only can reduce structural volume, but also can reduce costs; And, when needing the more vacuum chamber inflation to semiconductor processing equipment, volume can be reduced more significantly and reduce costs.
Accompanying drawing explanation
Fig. 1 is the structure diagram of semiconductor equipment;
Fig. 2 is the schematic diagram inflating gas circuit in Fig. 1;
A kind of schematic diagram of the inflation gas circuit of the vacuum chamber that Fig. 3 provides for the application embodiment of the present invention; And
The another kind of schematic diagram of the inflation gas circuit of the vacuum chamber that Fig. 4 provides for the application embodiment of the present invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, the inflation gas circuit of the vacuum chamber that the embodiment of the present invention provides and semiconductor processing equipment are described in detail.
A kind of schematic diagram of the inflation gas circuit of the vacuum chamber that Fig. 3 provides for the application embodiment of the present invention.Referring to Fig. 3, the inflation gas circuit of the vacuum chamber that the present embodiment provides, for realizing, two vacuum chambers 30 and 40 being inflated, to make its internal environment for atmospheric environment.The inflation gas circuit 20 of the vacuum chamber that the present embodiment provides comprises inflation main road 201 and the inflation branch road 202 of series connection.Wherein, the air inlet of inflation main road 201 and institute's inflatable body are (such as, nitrogen) source of the gas be connected, the gas outlet of inflation main road 201 is connected with the air inlet of each inflation branch road 202, inflation main road 201 is provided with the first on-off valve V0, first on-off valve V0 is for controlling the break-make of this inflation main road 201, and this first on-off valve V0 is pneumatic operated valve.Further, be arranged in parallel trickle charge bypass 203, trickle charge bypass 203 be provided with choke valve NV at the two ends of the first on-off valve V0, choke valve NV is for controlling trickle charge bypass 203 throughput to control the speed of trickle charge, and this choke valve NV is needle-valve.And, inflation branch road 202 is communicated with 40 one_to_one corresponding with vacuum chamber 30, every bar inflation branch road 202 of parallel connection is provided with the second on-off valve V1 and V2, and the second on-off valve V1 and V2 is for controlling the break-make of the inflation branch road 202 at its place, and the second on-off valve is pneumatic operated valve.
Operationally, open choke valve NV in advance and regulate this choke valve NV to meet actual needs to make it, the initial condition of the first on-off valve V0, the second on-off valve V1 and V2 is off state to the inflation gas circuit of the vacuum chamber that the present embodiment provides.In the case, if when vacuum chamber 30 needs to inflate, then open the second on-off valve V1 of vacuum chamber 30 correspondence, now can realize vacuum chamber 30 trickle charge; To realize, vacuum chamber 30 is filled soon, then open the first on-off valve V0, that is, if open the second on-off valve V1, can realize carrying out trickle charge to vacuum chamber 30, open the second on-off valve V1 and the first on-off valve V0, can realize filling soon vacuum chamber 30.In like manner, if open the second on-off valve V2 of vacuum chamber 40 correspondence, can realize vacuum chamber 40 trickle charge; If open the second on-off valve V2 and the first on-off valve V0, can realize filling soon vacuum chamber 40.Therefore, if open the second on-off valve V1 and V2, can realize carrying out trickle charge to vacuum chamber 30 and 40 simultaneously, and if open the first on-off valve V0 and second on-off valve V1, V2, can realize filling soon vacuum chamber 30 and 40 simultaneously.
As from the foregoing, the inflation gas circuit of the vacuum chamber adopting the present embodiment to provide can realize respectively or inflate multiple vacuum chamber simultaneously, and the first on-off valve V0 is for fill valve soon, flow-limiting valve NV is trickle charge flow-limiting valve, therefore, the inflation gas circuit 20 of the vacuum chamber that the present embodiment provides be provided with on inflation main road 201 control each inflation branch road 202 fill valve and trickle charge flow-limiting valve soon, and be only provided with on-off valve on each inflation branch road 202.Be provided with on each inflation branch road 202 in this and prior art and fill valve and trickle charge flow-limiting valve soon, trickle charge on-off valve is compared, can realize under the prerequisite that each vacuum chamber is inflated, the magnitude setting filling valve and trickle charge flow-limiting valve soon can be reduced, particularly, if the quantity of vacuum chamber is N number of, N be greater than 2 integer, then can save N-1 and fill valve and trickle charge flow-limiting valve soon, thus the technical problem that the number of devices of whole inflation gas circuit is more can be solved, thus not only can reduce structural volume, but also can reduce costs, especially expensive needle-valve quantity is reduced, significantly can reduce inflation gas circuit cost, and when needs are inflated more vacuum chamber, namely the value of N is larger, then the value of N-1 is larger, thus volume can be reduced more significantly and reduce costs.
Find in real work: only need to load chamber and realize filling air continually and vacuumizing, and need transmission chamber to be in vacuum state always.And need transmission chamber inflation when keeping in repair equipment, to be atmospheric environment.Therefore, operationally, only need to fill soon or trickle charge loading chamber as requested, when keeping in repair, need to fill soon or trickle charge loading chamber and transmission chamber simultaneously, in other words, do not need to fill soon respectively and trickle charge multiple vacuum chamber, thus the inflation gas circuit of the inflation gas circuit hinge structure of vacuum chamber that the present embodiment provides is compared, completely can practical requirement, thus each inflation gas circuit in prior art can be solved can realize vacuum chamber trickle charge corresponding with it or the problem of function waste of filling soon.
In the present embodiment, inflation main road is also provided with pressure regulating valve, and described pressure regulating valve is positioned at the upstream position of the first on-off valve, and in order to regulate, the pressure of inflatable body is to rational scope.
In actual applications, when if desired the vacuum chamber more than two being inflated, inflation gas circuit as shown in Figure 4, can realize inflating vacuum chamber 30,40,50 and 60, and one_to_one corresponding is provided with second on-off valve V1, V2, V3, V4 and V5 on inflation branch road corresponding with it, its course of work, with similar to the course of work of two vacuum chambers 30 and 40, does not repeat them here.
As another one technical scheme, the present invention also provides a kind of semiconductor processing equipment, and it comprises the loading chamber, transmission chamber, processing chamber and the inflation gas circuit that are connected by the family of power and influence successively.Wherein, load chamber is indoor for placing wafer, manipulator is provided with in transmission chamber, manipulator is used for realizing the transmission of wafer between each chamber when the family of power and influence opens, processing chamber is vacuum environment, for carrying out technique to wafer, inflation gas circuit is used for realizing loading chamber and transmission chamber inflation.Further, inflation gas circuit adopts the inflation gas circuit of above-mentioned vacuum chamber provided by the invention, particularly, loads the vacuum chamber 30 and 40 in chamber and the corresponding above-described embodiment of transmission chamber.The course of work and above-described embodiment of this inflation gas circuit are similar, do not repeat them here.
Wherein, semiconductor processing equipment is semiconductor etching device or semiconductor deposition equipment.
Be appreciated that loading chamber and transmission chamber are all also provided with and vacuumize gas circuit, or transmission chamber is provided with and vacuumizes gas circuit, in order to realize realizing vacuumizing to loading chamber and transmission chamber.Adopt vacuum pump to be vacuumized it by vacuum air-channel, therefore, loading chamber and transmission chamber are the chamber vacuumizing and fill air switching, in order to the transition chamber thereof transmitted between atmospheric environment and the vacuum environment of processing chamber as wafer.
The one of the semiconductor processing equipment that the present embodiment provides is loaded the course of work and is specifically comprised the following steps: make transmission chamber be vacuum environment by vacuumizing gas circuit in advance.1) wafer transmission of ambient atmosphere environment will be arranged in loading chamber.Particularly, first by inflation gas circuit, loading chamber is inflated, to make its internal environment for atmospheric environment; Open the family of power and influence loaded between chamber and ambient atmosphere environment again, by wafer transmission to loading chamber.2) wafer transmission of loading chamber will be positioned to transmission chamber.Particularly, first the family of power and influence loaded between chamber and transmission chamber is opened, by the vacuum air-channel of transmission chamber, loading chamber is vacuumized again, by the manipulator in transmission chamber by wafer transmission in transmission chamber, then close the family of power and influence loaded between chamber and transmission chamber.3) wafer transmission of transmission chamber will be positioned to processing chamber.Particularly, first, open the family of power and influence between transmission chamber and processing chamber, then by the manipulator in transmission chamber by wafer transmission in processing chamber, transmission chamber passed back by manipulator unloaded afterwards, and the family of power and influence between closing transmission chamber and processing chamber.4) in processing chamber, wafer is deposited or etching technics.
In the present embodiment, semiconductor processing equipment also comprises unloading chamber, loads chamber and is connected by the family of power and influence with transmission chamber, and in this case, inflation gas circuit is used for inflating loading chamber, transmission chamber and unloading chamber.Particularly, the vacuum chamber 30,40 and 50 in Fig. 4 of the corresponding above-described embodiment of chamber, transmission chamber and unloading chamber is loaded.
A kind of unloaded operation process of the semiconductor processing equipment that the present embodiment provides specifically comprises the following steps: make transmission chamber be vacuum environment by vacuumizing gas circuit in advance.1) wafer transmission of processing chamber will be arranged in transmission chamber.Particularly, first, open the family of power and influence between transmission chamber and processing chamber, then by the manipulator in transmission chamber by wafer transmission in transmission chamber, the family of power and influence afterwards between closing transmission chamber and processing chamber.2) wafer transmission of transmission chamber will be positioned to unloading chamber.Particularly, first the family of power and influence between unloading chamber and transmission chamber is opened, by the vacuum air-channel of transmission chamber, unloading chamber is vacuumized again, by the manipulator in transmission chamber by wafer transmission extremely unloading chamber, transmission chamber passed back by manipulator unloaded afterwards, then closes the family of power and influence between unloading chamber and transmission chamber.3) wafer in unloading chamber is spread out of in ambient atmosphere environment.Particularly, by inflation gas circuit to the inflation of unloading chamber, to make its internal environment for atmospheric environment; Open the family of power and influence between unloading chamber and ambient atmosphere environment again, by wafer transmission in ambient atmosphere environment.
As from the foregoing, transmission chamber needs when actual process to remain on vacuum state always.And only when safeguarding semiconductor equipment, just need to adopt inflation gas circuit to fill air to transmission chamber.
The semiconductor processing equipment that the embodiment of the present invention provides, it adopts the inflation gas circuit of vacuum chamber provided by the invention, thus can the more technical problem of the number of devices of whole inflation gas circuit, thus not only can reduce structural volume, but also can reduce costs; And, when needing the more vacuum chamber inflation to semiconductor processing equipment, volume can be reduced more significantly and reduce costs.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, when not departing from principle of the present invention and essence, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (7)
1. an inflation gas circuit for vacuum chamber, at least two described vacuum chamber inflations, is characterized in that for realizing, comprising inflation main road and the inflation branch road of series connection, wherein
Described inflation main road is provided with the first on-off valve, and described first on-off valve is for controlling the break-make of described inflation main road;
Be arranged in parallel trickle charge bypass at the two ends of described first on-off valve, described trickle charge bypass is provided with choke valve, described choke valve is for controlling described trickle charge bypass gas flow amount to control the speed of trickle charge; And
Described inflation branch road is communicated with described vacuum chamber one_to_one corresponding, and every bar inflation branch road of parallel connection is provided with the second on-off valve, and described second on-off valve is for controlling the break-make of the described inflation branch road at its place.
2. according to the inflation gas circuit of the vacuum chamber shown in claim 1, it is characterized in that, described inflation main road is also provided with pressure regulating valve, and described pressure regulating valve is positioned at the upstream position of described first on-off valve.
3. according to the inflation gas circuit of the vacuum chamber shown in claim 1, it is characterized in that, described first on-off valve and/or the second on-off valve are pneumatic operated valve.
4. according to the inflation gas circuit of the vacuum chamber shown in claim 1, it is characterized in that, described choke valve is needle-valve.
5. a semiconductor processing equipment, it comprises inflation gas circuit and the loading chamber, transmission chamber, the processing chamber that are connected by the family of power and influence successively, described inflation gas circuit is used for realizing described loading chamber and the inflation of described transmission chamber, it is characterized in that, described inflation gas circuit adopts the inflation gas circuit of the vacuum chamber described in the claims 1-4 any one.
6. semiconductor processing equipment according to claim 5, is characterized in that, described semiconductor processing equipment is semiconductor etching device or semiconductor deposition equipment.
7. semiconductor processing equipment according to claim 5, is characterized in that, also comprises unloading chamber, and described inflation gas circuit is used for realizing inflating described loading chamber, described transmission chamber and described unloading chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410604096.2A CN105551995A (en) | 2014-10-30 | 2014-10-30 | Inflation air channel of vacuum chambers and semiconductor processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410604096.2A CN105551995A (en) | 2014-10-30 | 2014-10-30 | Inflation air channel of vacuum chambers and semiconductor processing equipment |
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| CN105551995A true CN105551995A (en) | 2016-05-04 |
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| CN201410604096.2A Pending CN105551995A (en) | 2014-10-30 | 2014-10-30 | Inflation air channel of vacuum chambers and semiconductor processing equipment |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106268518A (en) * | 2016-08-24 | 2017-01-04 | 佛山市思博睿科技有限公司 | A kind of multipath gas switching supply and the constant vacuum response system of total air demand |
| CN111383886A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
| CN111477566A (en) * | 2020-04-03 | 2020-07-31 | 河北普兴电子科技股份有限公司 | Device and method for improving slip sheet of epitaxial wafer |
| CN112614799A (en) * | 2020-12-18 | 2021-04-06 | 上海广川科技有限公司 | Wafer transmission device and transmission method |
| CN113252291A (en) * | 2021-07-15 | 2021-08-13 | 中国空气动力研究与发展中心低速空气动力研究所 | Icing wind tunnel air supply system and method |
| CN113805619A (en) * | 2021-09-24 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Pressure control system and control method |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106268518A (en) * | 2016-08-24 | 2017-01-04 | 佛山市思博睿科技有限公司 | A kind of multipath gas switching supply and the constant vacuum response system of total air demand |
| CN111383886A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | System for preventing corrosion of etching gas supply pipeline and plasma reactor operation method |
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| CN111477566A (en) * | 2020-04-03 | 2020-07-31 | 河北普兴电子科技股份有限公司 | Device and method for improving slip sheet of epitaxial wafer |
| CN112614799A (en) * | 2020-12-18 | 2021-04-06 | 上海广川科技有限公司 | Wafer transmission device and transmission method |
| CN113252291A (en) * | 2021-07-15 | 2021-08-13 | 中国空气动力研究与发展中心低速空气动力研究所 | Icing wind tunnel air supply system and method |
| CN113252291B (en) * | 2021-07-15 | 2021-10-08 | 中国空气动力研究与发展中心低速空气动力研究所 | Icing wind tunnel air supply system and method |
| CN113805619A (en) * | 2021-09-24 | 2021-12-17 | 北京北方华创微电子装备有限公司 | Pressure control system and control method |
| CN113805619B (en) * | 2021-09-24 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Pressure control system and control method |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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