CN102751170B - Semiconductor processing device - Google Patents
Semiconductor processing device Download PDFInfo
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- CN102751170B CN102751170B CN201110097992.0A CN201110097992A CN102751170B CN 102751170 B CN102751170 B CN 102751170B CN 201110097992 A CN201110097992 A CN 201110097992A CN 102751170 B CN102751170 B CN 102751170B
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Abstract
The invention discloses a semiconductor processing device which comprises a vacuum chamber and an air-filling circuit, wherein the vacuum chamber comprises an air inlet; the air-filling circuit comprises a rapid air-filling channel, a slow air-filling channel and an auxiliary air-filling channel, wherein the rapid air-filling channel, the slow air-filling channel and the auxiliary air-filling channel are connected in parallel between an air supply and the vacuum chamber, and at least one of the rapid air-filling channel, the slow air-filling channel and the auxiliary air-filling channel can be conducted; and the auxiliary air-filling channel is provided with an air storage unit, the air storage unit is used for storing air, and the auxiliary air-filling channel can convey the air stored in the air storage unit to the vacuum chamber so as to assist the air filling of the rapid air-filling channel and the slow air-filling channel. In the invention, the vacuum chamber can be filled with air in various modes, therefore, the operating mode is flexible, and the adaptation is strong; in addition, the semiconductor processing device is convenient to debug and low in maintenance cost.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of have the semiconductor processing equipment improving inflation gas circuit.
Background technology
Plasma etching machine is the key equipment of semiconductor production, just must can carry out etching technics under a high vacuum.Fig. 1 shows existing plasma etching machine.As shown in Figure 1, plasma etching machine has generally included 3 vacuum chambers, is respectively process cavity 6 ', transmission cavity 4 ' and load chamber 2 '.Wherein, transmission cavity 4 ' and load chamber 2 ' are the transition chamber thereofs that wafer 1 ' transmits between extraneous atmospheric environment and the process cavity 6 ' of high vacuum, are provided with the family of power and influence 5 ' so that transmission wafer 1 ' between each chamber.Wafer 1 ' is transmitted by manipulator 3 '.When normally working, process cavity 6 ' is in high vacuum state all the time, and load chamber 2 ' and transmission cavity 4 ' then need constantly to switch between vacuum/atmospheric condition, therefore need to inflate/vacuumize continually.The length of inflationtime is directly connected to the operating efficiency of equipment.The inflation gas circuit General Requirements of usual employing possesses trickle charge and fills two kinds of functions soon.
Fig. 2 and Fig. 3 respectively illustrates two kinds of inflation gas circuits conventional in existing plasma etching machine.Fig. 2 be a kind of existing chamber fast-trickle charge gas gas circuit.N
2entered by source of the gas, drop to suitable pressure through pressure regulating valve PR.Pneumatic diaphragm valve V1 and V2 can open or turn off corresponding gas circuit.Wherein, V1 controls trickle charge gas circuit, and V2 controls to inflate road soon.Needle-valve NV is for regulating the speed of trickle charge, and filter LF is used for the impurity in filtering gas.During work, need trickle charge just beat V1 and turn off V2, just open V2 when needing to fill soon and turn off V1, do not need just to turn off V1 and V2 during inflation simultaneously.
But above-mentioned chamber is fast-and trickle charge gas gas circuit has following shortcoming:
1, adaptive capacity is poor.When gas source feed pressure has fluctuation, the time of inflation fluctuates thereupon, unstable.
2, condition of work lacks flexibility.In actual applications, the gas source condition of different factory is different.When the caliber of the steam line of manufacturer's source of the gas is less, the inflationtime of the inflation gas circuit in Fig. 2 can not ensure to reach design objective.
3, fill soon limited in one's ability.Being limited to the restriction of existing operated pneumatic valve size and manufacturer's steam line diameter, when the volume of vacuum chamber is larger, gas supply flow cannot being improved by simply increasing air feed caliber.
Fig. 3 is the existing gas tank supplemental inflatable gas circuit for plasma etching machine.N
2entered by source of the gas, drop to suitable pressure through pressure regulating valve PR, be then filled with in gas tank.Pneumatic diaphragm valve V is provided with to open or to turn off inflation gas circuit between gas tank and vacuum chamber.Filter LF is used for the impurity in filtering gas.During work, gas tank is first full of by source of the gas gradually, when needs are inflated, opens diaphragm valve V and be filled with N in chamber
2.Gas tank can play the effect of buffering, solves gas source feed deficiency and the contradiction of vacuum chamber volume greatly between both.
But above-mentioned gas tank supplemental inflatable gas circuit has following shortcoming:
1, supporting gas tank volume is large.Owing to being inflated by gas tank completely, the volume of gas tank is larger than the volume of vacuum chamber, such as, be 1.2 ~ 1.5 times of vacuum chamber volume.But when vacuum chamber volume is larger, the volume of gas tank will become very large, and the semiconductor equipment compact for structural requirement is very unfavorable.
2, existing gas tank is arranged in independent factory building usually, is provided separately with plasma etching machine, and the volume of described gas tank is very large.Thus, debugging and the maintenance of system are very inconvenient, and cost is higher.
3, charging efficiency is low.Because gas tank volume is large, the time be full of is even longer than the time being directly full of chamber, and therefore, this gas circuit is only applicable to inflate the not high occasion of frequency.
Summary of the invention
Object of the present invention is intended at least solve one of above-mentioned technological deficiency.
For this reason, the present invention needs to provide a kind of semiconductor processing equipment, and this semiconductor processing equipment can provide various ways to inflate, and flexible working mode is adaptable, and in addition, the debugging of this semiconductor equipment is convenient, maintenance cost is low.。
For solving the problems of the technologies described above, embodiment according to an aspect of the present invention proposes a kind of semiconductor processing equipment, comprising: vacuum chamber, and described vacuum chamber comprises air inlet; And inflation gas circuit, described inflation gas circuit is connected with the air inlet of described vacuum chamber, for inflating to described vacuum chamber, wherein said inflation gas circuit comprises: fast aeration path, at a slow speed gas fill port and supplemental inflatable path, and wherein said fast aeration path, at a slow speed gas fill port and supplemental inflatable path in parallel are connected between described air supply source and vacuum chamber and at least one in described fast aeration path, at a slow speed gas fill port and supplemental inflatable path can conducting; And described supplemental inflatable path is provided with gas storage unit, described gas storage unit is used for stored-gas, the gas stored in described gas storage unit can be delivered to described vacuum chamber by described supplemental inflatable path, for auxiliary described fast aerating air and described inflation of inflating at a slow speed gas circuit.
Provide three grades of inflation gas circuits in parallel according to the semiconductor processing equipment of the embodiment of the present invention, various ways can be provided to inflate vacuum chamber, flexible working mode, adaptable.
And, utilize the dual air feed of air supply source and gas storage element, improve aeration speed, even and if cannot gassy storage element twice inflation interim, also source of the gas can be utilized to complete inflation to chamber, therefore can allow higher inflation frequency.
Further, because the gas storage unit in the present invention for gas storage is a part for semiconductor processing equipment, thus whole equipment volume reduces, and reduces the complexity of system debug and maintenance.
In one embodiment of the invention, the aeration speed of described fast aeration path and described gas fill port is at a slow speed adjustable.Thus, aeration speed that is quick and gas fill port at a slow speed can regulate as required.
In one embodiment of the invention, described fast aeration path is provided with the first control valve and adjuster valve, wherein, described first control valve is arranged on the side of contiguous described air supply source, connected sum for controlling described fast aeration path disconnects, and described adjuster valve is arranged on the side of contiguous described vacuum chamber, for regulating the aeration speed of described fast aeration path.
In one embodiment of the invention, described gas fill port is at a slow speed provided with the second control valve, described second control valve for described in controlling at a slow speed the connected sum of gas fill port disconnect.
In one embodiment of the invention, described supplemental inflatable path is provided with the 3rd control valve and the 4th control valve, wherein, described 3rd control valve is arranged on the side of contiguous described air supply source, 4th control valve is arranged on the side of contiguous described vacuum chamber, described gas storage unit is between described 3rd control valve and the 4th control valve, and described 3rd control valve and described 4th control valve disconnect for the connected sum controlling described supplemental inflatable path.
In one embodiment of the invention, described supplemental inflatable path is also provided with unidirectional valve, described unidirectional valve between described 3rd control valve and described gas storage unit, for preventing the back flow of gas in described gas storage unit.
Thus, by arranging unidirectional valve between gas storage unit and the 3rd control valve, the back flow of gas can placed in gas storage unit returns air supply source.
In one embodiment of the invention, described inflation gas circuit also comprises one or two or three pressure regulating valves, wherein,
When described inflation gas circuit comprises a pressure regulating valve, described pressure regulating valve is at described air supply source with between described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path, and described pressure regulating valve is connected with described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path respectively;
When described inflation gas circuit comprises two pressure regulating valves, one of them pressure regulating valve is between described air supply source and any two paths of described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path, be connected with described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path any two respectively, another pressure regulating valve is between remaining gas fill port;
When described inflation gas circuit comprises three pressure regulating valves, described each pressure regulating valve to lay respectively between described air supply source and described every bar gas fill port thus, pressure according to air supply source eluting gas arranges pressure regulating valve flexibly between air supply source and each gas fill port, three gas fill port can share a pressure regulating valve, also any two gas fill port can share a pressure regulating valve or distribute separately pressure regulating valve for every bar gas fill port, flexible configuration.
In one embodiment of the invention, described inflation gas circuit also comprises one, two or three filters, wherein,
When described inflation gas circuit comprises a filter, described filter bits is in described fast aeration path, described gas fill port at a slow speed and to be connected with described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path respectively between described supplemental inflatable path and described vacuum chamber;
When described inflation gas circuit comprises two filters, one of them filter bits in and between any two paths being connected to described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path and described vacuum chamber, another filter bits is between remaining gas fill port and described vacuum chamber;
When described inflation gas circuit comprises three filters, described each filter lays respectively between every bar gas fill port and described vacuum chamber, is delivered to the gas of described vacuum chamber for filtering corresponding gas fill port.
Thus, according to the impurity situation of eluting gas in individual channel, between each gas fill port and vacuum chamber, filter is set flexibly, three gas fill port can share a filter, also any two gas fill port a filter or be the independent dispense filter device of every bar gas fill port can be shared, flexible configuration.
In one embodiment of the invention, described inflation gas circuit comprises following six kinds of mode of operations:
1) described fast aeration path is inflated in described vacuum chamber, and described air supply source is inflated in described gas storage unit, and described gas fill port at a slow speed disconnects;
2) described in, gas fill port is inflated in described vacuum chamber at a slow speed, and described fast aeration path and described supplemental inflatable path disconnect;
3) described in, gas fill port is inflated in described vacuum chamber at a slow speed, and described air supply source is inflated in described gas storage unit, and described fast aeration path disconnects;
4) described in, gas fill port is inflated in described vacuum chamber at a slow speed, and described air supply source is inflated in described gas storage unit, and the gas in described gas storage unit is delivered to described vacuum chamber, and described fast aeration path disconnects;
5) described air supply source is inflated in described gas storage unit, and the gas in described gas storage unit is delivered to described vacuum chamber, described quick and gas fill port disconnection at a slow speed; And
6) gas in described gas storage unit is delivered to described vacuum chamber, described quick and gas fill port disconnection at a slow speed.
Thus, by controlling the on/off of three gas fill port, realize the different airing forms to vacuum chamber, thus meet the difference inflation requirement of vacuum chamber.
In one embodiment of the invention, described semiconductor processing equipment is plasma etching machine.
The aspect that the present invention adds and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is existing plasma etching machine chamber structure schematic diagram;
Fig. 2 be existing chamber fast-trickle charge gas gas circuit schematic diagram;
Fig. 3 is existing gas tank supplemental inflatable gas circuit schematic diagram;
Fig. 4 is the schematic diagram of the semiconductor processing equipment according to the embodiment of the present invention;
Fig. 5 is the schematic diagram of the inflation gas circuit in semiconductor processing equipment according to an embodiment of the invention;
Fig. 6 is the schematic diagram of the inflation gas circuit in semiconductor processing equipment according to another embodiment of the invention;
Fig. 7 is the schematic diagram of the inflation gas circuit in semiconductor processing equipment according to still a further embodiment;
Fig. 8 is the schematic diagram of the inflation gas circuit in semiconductor processing equipment according to still another embodiment of the invention.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the present invention.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the invention provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.
In describing the invention, it will be appreciated that, term " longitudinal direction ", " transverse direction ", " on ", D score, "front", "rear", "left", "right", " vertically ", " level ", " top ", " end " " interior ", the orientation of the instruction such as " outward " or position relationship be based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
In describing the invention, it should be noted that, unless otherwise prescribed and limit, term " installation ", " being connected ", " connection " should be interpreted broadly, such as, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly be connected, also indirectly can be connected by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
Below with reference to Fig. 4, the semiconductor processing equipment 1000 according to the embodiment of the present invention is described.As shown in Figure 4, semiconductor processing equipment 1000 comprises vacuum chamber and inflation gas circuit 100 (will be described in detail below).Vacuum chamber comprises the air inlet for air inlet, and inflation gas circuit 100 is connected with the air inlet of vacuum chamber, for inflating in vacuum chamber.
Specifically, the vacuum chamber of plasma etching machine can comprise load chamber 2, transmission cavity 4 and process cavity 6.Wherein, transmission cavity 4 and load chamber 2 are transition chamber thereofs that wafer 1 transmits between extraneous atmospheric environment and the process cavity 6 of high vacuum, are provided with the family of power and influence 5 so that transmission wafer 1 between each chamber.Wafer 1 is transmitted by manipulator 3.When normally working, process cavity 6 is in high vacuum state all the time, and inflation gas circuit 100 is inflated to transmission cavity 4 and load chamber 2, thus makes transmission cavity 4 and load chamber 2 need constantly to switch between vacuum/atmospheric condition.Gas is discharged from exhaust tube 7.
The inflation gas circuit 100 according to the embodiment of the present invention is described in detail below with reference to Fig. 5 to Fig. 8.
As shown in Figure 5, be arranged between air supply source 300 and vacuum chamber 200 according to the inflation gas circuit 100 of the embodiment of the present invention, for inflating to vacuum chamber 200.Air supply source 300 can provide high pure nitrogen N
2, vacuum chamber 200 is filled to atmospheric pressure state by vacuum state.Further, the pressure of the gas that air supply source 300 provides is suitable, to air supply source 300 export gas without the need to carrying out pressure regulation.
Inflation gas circuit 100 comprises fast aeration path 110, at a slow speed gas fill port 120 and supplemental inflatable path 130, and wherein fast aeration path 110, at a slow speed gas fill port 120 and supplemental inflatable path 130 are connected in parallel between air supply source 300 and vacuum chamber 200.At least one in fast aeration path 110, at a slow speed gas fill port 120 and supplemental inflatable path 130 can conducting.
Fast aeration path 110 is inflated in vacuum chamber 200.As shown in Figure 5, fast aeration path 110 is provided with the first control valve V1 and needle-valve NV.First control valve V1 is arranged on the side of contiguous air supply source 300, and the connected sum that can control fast aeration path 110 disconnects.Needle-valve NV arranges the side of contiguous vacuum chamber 200, for regulating the aeration speed of fast aeration path 110, and then fast aeration path 110 can be regulated to the aeration speed of vacuum chamber 200.The high pure nitrogen N provided by air supply source 300
2vacuum chamber 200 is filled to by fast aeration path 110.
Gas fill port 120 is inflated in vacuum chamber 200 at a slow speed.As shown in Figure 5, gas fill port 120 is at a slow speed provided with the second control valve V2, disconnects for the connected sum controlling gas fill port 120 at a slow speed.The high pure nitrogen N provided by air supply source 300
2vacuum chamber 200 is filled to by gas fill port 120 at a slow speed.
Supplemental inflatable path 130 is disposed with the 3rd control valve V3, gas storage unit 140 and the 4th control valve V4.3rd control valve V3 is arranged on the side of contiguous air supply source 300, disconnects for the connected sum controlling supplemental inflatable path 130.4th control valve V4 is arranged on the side of contiguous vacuum chamber 200.Gas storage unit 140 between the 3rd control valve V3 and the 4th control valve V4, for storing the gas from air supply source 300.Gas storage unit 140 has unidirectional counterflow-preventing function.In one embodiment of the invention, the volume of gas storage unit 140 can be 0.5 ~ 1 times of vacuum chamber 200.Wherein, gas storage unit 140 can be gas tank.Described supplemental inflatable path 130 is for auxiliary described fast aerating air 110 and described inflation of inflating at a slow speed gas circuit 120.
During work, gas storage unit 140 is first full of by air supply source 300 gradually.When needs are inflated vacuum chamber 200, such as, when air supply source 300 is for unsaturated vapor, open the 4th control valve V4, by the N in gas storage unit 140
2pour in vacuum chamber 200.Thus, the gas storage unit 140 in supplemental inflatable gas circuit 130 can play the effect of buffer storage to gas, and in the confession unsaturated vapor of air supply source 300 and vacuum chamber 200 needs further supply gas time, auxiliary inflation supply is provided.Meanwhile, due to the existence of gas storage unit 140, when inflation gas circuit need not be changed, the steam line that caliber is larger can be adopted between gas storage unit 140 and vacuum chamber 200, thus can inflationtime be reduced.
In one embodiment of the invention, the first control valve V1, the second control valve V2, the 3rd control valve V3 and the 4th control valve V4 valve that can be pneumatic diaphragm valve or be controlled by extra power (such as, electric energy or liquid etc.).Wherein, the 3rd control valve V3 can also be manually-operated gate, thus is disconnected by the connected sum of Artificial Control supplemental inflatable path 130.
When gas storage unit 140 does not have unidirectional counterflow-preventing function, then on supplemental inflatable path 130, be provided with unidirectional valve further, wherein unidirectional valve is between the 3rd control valve V3 and gas storage element 140.Unidirectional valve can prevent the back flow of gas in gas storage unit 140, even if when air supply source 300 insufficient pressure, gas storage unit 140 also can retain the gas stored.
When the supply pressure fluctation that air supply source 300 provides is larger, inflation gas circuit can not be delivered directly to, now inflate gas circuit 100 and also comprise pressure regulating valve, be arranged between air supply source 300 and gas fill port.Wherein, every bar gas fill port can be arranged a pressure regulating valve, or any two gas fill port share a pressure regulating valve, or three gas fill port share a pressure regulating valve.In one embodiment of the invention, the quantity of pressure regulating valve can be one, two or three.
When inflating gas circuit 100 and comprising a pressure regulating valve, pressure regulating valve is between the parallel connected end of air supply source 300 and fast aeration path 110, at a slow speed gas fill port 120, supplemental inflatable path 130.Specifically, this pressure regulating valve is all connected with fast aeration path 110, at a slow speed gas fill port 120, supplemental inflatable path 130, and air supply source 300 can be regulated to output to the pressure of fast aeration path 110, the at a slow speed gas of gas fill port 120 and supplemental inflatable path 130 simultaneously.
When inflating gas circuit 100 and comprising two pressure regulating valves, one of them pressure regulating valve at air supply source 300 and fast, at a slow speed and between any two gas fill port of supplemental inflatable path, be connected with above-mentioned two gas fill port respectively.The pressure of the gas of two gas fill port that this pressure regulating valve can regulate air supply source 300 to output to be connected with pressure regulating valve.Such as: one of them pressure regulating valve is at air supply source 300 and fast aeration path 110, at a slow speed between gas fill port 120, be connected with the parallel connected end of gas fill port 120 at a slow speed with fast aeration path 110, this pressure regulating valve can regulate air supply source 300 to output to the pressure of fast aeration path 110 and the gas of gas fill port 120 at a slow speed.Another pressure regulating valve in two pressure regulating valves at air supply source 300 and fast, at a slow speed and in supplemental inflatable path between a remaining gas fill port, for the pressure regulating air supply source 300 to output to the gas of this gas fill port.Such as: another pressure regulating valve between air supply source 300 and supplemental inflatable path 130, for the pressure regulating air supply source 300 to output to the gas of supplemental inflatable path.
When inflating gas circuit 100 and comprising three pressure regulating valves, each pressure regulating valve correspondingly between air supply source 300 and every bar gas fill port, namely at fast aeration path 110, at a slow speed gas fill port 120 with arrange a pressure regulating valve between supplemental inflatable path 130 and air supply source 300 respectively.The pressure of each pressure regulating valve for regulating air supply source to output to the gas of the gas fill port that be connected corresponding to this pressure regulating valve.
Including impurity because each bar gas fill port is transported in the gas of vacuum chamber 200, in order to ensure the treatment effect of the wafer in vacuum chamber 200, needing to filter the impurity in gas.Now, inflation gas circuit 100 also comprises filter, is arranged between gas fill port and vacuum chamber 200.Wherein, every bar gas fill port can be arranged a filter, or any two gas fill port share a filter, or three gas fill port share a filter.In one embodiment of the invention, the quantity of filter can be one, two or three.
When inflating gas circuit 100 and comprising a filter, filter bits is between the parallel connected end and vacuum chamber 200 of fast aeration path 110, at a slow speed gas fill port 120, supplemental inflatable path 130.Specifically, this filter is all connected with fast aeration path 110, at a slow speed gas fill port 120, supplemental inflatable path 130, can filter the impurity that three gas fill port are transported in the gas of vacuum chamber 20 simultaneously.
When inflating gas circuit and comprising two filters, one of them filter bits is in fast, at a slow speed and between any two paths of supplemental inflatable path and vacuum chamber 200, be connected with above-mentioned two gas fill port respectively.This filter can filter two connected gas fill port and be transported to impurity in the gas of vacuum chamber 200.Such as: the filter bits of one of them is in fast aeration path 110, at a slow speed between gas fill port 120 and vacuum chamber 200, be connected with the parallel connected end of gas fill port 120 at a slow speed with fast aeration path 110, this filter can filter fast aeration path 110 and gas fill port 120 is transported in the gas of vacuum chamber 200 at a slow speed impurity.Another filter bits in two filters is in fast, at a slow speed and in supplemental inflatable path between a remaining gas fill port and vacuum chamber 200, be delivered to the impurity in the gas of vacuum chamber 200 for filtering this gas fill port.Such as: another filter bits, between supplemental inflatable path 130 and vacuum chamber 200, is transported to impurity in the gas of vacuum chamber 200 for regulating the gas of supplemental inflatable path.
When inflating gas circuit 100 and comprising three filters, each filter correspondingly between every bar gas fill port and vacuum chamber 200, namely at fast aeration path 110, at a slow speed gas fill port 120 with arrange a filter between supplemental inflatable path 130 and vacuum chamber 200 respectively.Each filter is for filtering the impurity in the gas between gas fill port and vacuum chamber 200 that is connected with this filter.
In one embodiment of the invention, the quantity for the quantity of pressure regulating valve in inflation gas circuit 100 and filter can combination in any, and the inflation gas circuit of various combination mode all falls into protection scope of the present invention.
Illustrate below in conjunction with Fig. 6 to Fig. 8 and describe according to the inflation gas circuit 100 of the embodiment of the present invention.
Fig. 6 shows the inflation gas circuit 100 with a pressure regulating valve and three filters.As shown in Figure 6, three gas fill port of inflation gas circuit 100 share a pressure regulating valve PR, and gas air supply source 300 being transported to each gas fill port carries out pressure regulation.There is respectively a filter between every bar gas fill port and vacuum chamber 200.Specifically, between fast aeration path 110 and vacuum chamber 200, be provided with the first filter LF1, for the impurity be transported in the gas of vacuum chamber 200 filters to fast aeration path 110.The second filter LF2 is being provided with at a slow speed, for filtering the impurity that gas fill port 120 is transported in the gas of vacuum chamber 200 at a slow speed between gas fill port 120 and vacuum chamber 200.The 3rd filter LF3 is provided with, for the impurity be transported in the gas of vacuum chamber 200 filters to supplemental inflatable path 130 between supplemental inflatable path 130 and vacuum chamber 200.
Fig. 7 shows the inflation gas circuit 100 with a pressure regulating valve and two filters.As shown in Figure 7, three gas fill port of inflation gas circuit 100 share a pressure regulating valve PR, and gas air supply source 300 being transported to each gas fill port carries out pressure regulation.By fast aeration path 110 and at a slow speed gas fill port 120 utilize a pipeline to be input to vacuum chamber 200, thus fast aeration path 110 and at a slow speed gas fill port 120 can share a first filter LF1.This first filter LF1 can filter fast aeration path 110 and gas fill port 120 is transported to vacuum chamber 200 at a slow speed gas.The second filter LF2 is provided with, for the impurity be transported in the gas of vacuum chamber 200 filters to supplemental inflatable path 130 between supplemental inflatable path 130 and vacuum chamber 200.Adopt above-mentioned two gas fill port to share the mode of filter, the production cost of inflation gas circuit can be reduced.
Fig. 8 shows the inflation gas circuit 100 with three pressure regulating valves and three filters.As shown in Figure 8, between every bar gas fill port and air supply source 300, a pressure regulating valve is respectively equipped with.Specifically, establish by the first pressure regulating valve PR1 between air supply source 300 and fast aeration path 110, carry out pressure regulation for gas air supply source 300 being transported to fast aeration path 110.At air supply source 300 with establish between gas fill port 120 at a slow speed by the second pressure regulating valve PR2, carry out pressure regulation for gas air supply source 300 being transported to gas fill port 120 at a slow speed.Establish by the 3rd pressure regulating valve PR3 between air supply source 300 and supplemental inflatable path 130, carry out pressure regulation for gas air supply source 300 being transported to supplemental inflatable path 130.By providing independent pressure regulating valve respectively to three gas fill port, more careful adjustable range can be obtained, particularly to the application scenario requiring very low trickle charge speed.A filter is respectively equipped with between every bar gas fill port and vacuum chamber 200.Specifically, establish by the first filter LF1 between fast aeration path 110 and vacuum chamber 200, for fast aeration path 110, the impurity be transported in the gas of vacuum chamber 200 filters.Establishing at a slow speed by the second filter LF2 between gas fill port 120 and vacuum chamber 200, for filtering the impurity that gas fill port 120 is transported in the gas of vacuum chamber 200 at a slow speed.Establish by the 3rd filter LF3 between supplemental inflatable path 130 and vacuum chamber 200, for supplemental inflatable path 130, the impurity be transported in the gas of vacuum chamber 200 filters.
Certainly it will be appreciated by persons skilled in the art that the form that the inflation gas circuit 100 of the embodiment of the present invention is not limited to above-described embodiment and provides, the pressure regulating valve of varying number and the inflation gas circuit of filter combination in any all fall into protection scope of the present invention.
The workflow of the inflation gas circuit 100 of the embodiment of the present invention is described below in conjunction with specific embodiment.
When inflating gas circuit 100 and working, when undesirable gas storage element 140 supplemental inflatable, then turn off the 3rd control valve V3 and the 4th control valve V4.Now, when needs during fast inflatable body, are then opened the first control valve V1 and turn off the second control valve V2 in vacuum chamber 200, namely only retain fast aeration path 110 and inflate in vacuum chamber 200.When needs are in vacuum chamber 200 during trickle charge gas, then open the second control valve V2 and turn off the first control valve V1, namely only retaining gas fill port 120 at a slow speed and inflate in vacuum chamber 200.
When inflating gas circuit 100 and working, when needs gas storage unit 140 supplemental inflatable, then open the 3rd control valve V3 and allow source of the gas at inflation interim gassy storage element 140.Now, when needs are in vacuum chamber 200 during trickle charge gas, then open the first control valve V1 and turn off the second control valve V2 and the 4th control valve V4 simultaneously.When needs are in vacuum chamber 200 during fast aeration, then open the second control valve V2 and turn off the first control valve V1 and the 4th control valve V4 simultaneously.When needs are inflated more quickly in vacuum chamber 200, open the second control valve V2 and the 4th control valve V4 simultaneously and close the first control valve V1, thus obtaining the dual air feed of air supply source 300 and gas storage element 140, substantially increasing aeration speed.
When the pressure oscillation of the gas that air supply source 200 provides is larger, open the 3rd control valve V3 and the 4th control valve V4 and turn off the first control valve V1 and the second control valve V2, thus can by gas storage unit 140 the larger gas pressure that fluctuates the effect of buffering is provided.When air supply source 200 is because of fault decompression, the N2 stored in gas storage unit 140 still can inflate in vacuum chamber 200, thus can provide safety guarantee for the inflation of vacuum chamber 200.
By the flexible combination application of three grades of fast aeration path 110, at a slow speed gas fill port 120 and supplemental inflatable paths 130 in parallel, the inflation gas circuit 100 of the embodiment of the present invention can provide six shown in table a kind of mode of operation.
Table 1
1) source of the gas is inflated at a slow speed:
Open V1, turn off V2, V3, V4: fast aeration path 110 is inflated in vacuum chamber 200, and gas fill port 120 and supplemental inflatable path 130 disconnect at a slow speed.Or
Open V1 and V3, turn off V2 and V4: while fast aeration path 110 is inflated in vacuum chamber 200, air supply source 300 is inflated in gas storage unit 140, and gas fill port 120 disconnects at a slow speed, and supplemental inflatable path 130 is not inflated in vacuum chamber 200.
2) source of the gas fast aeration:
Open V2, turn off V1, V3, V4: gas fill port 120 is inflated in vacuum chamber 200 at a slow speed, and fast aeration path 110 and supplemental inflatable path 130 disconnect.
3) auxiliary fast aeration:
Open V2 and V3, turn off V1 and V4: gas fill port 120 is inflated in vacuum chamber 200 at a slow speed, and air supply source 300 is inflated in gas storage unit 140, fast aeration path disconnects and supplemental inflatable path 130 is not inflated in vacuum chamber 200.
4) auxiliary supper-fast inflation:
Open V2, V3, V4, turn off V1: gas fill port 120 is inflated in vacuum chamber 200 at a slow speed, and air supply source 300 is inflated in gas storage unit 140, and the gas in gas storage unit 140 is delivered to vacuum chamber 200, and fast aeration path 110 disconnects.
5) source of the gas unstability supplemental inflatable:
Open V3 and V4, turn off V1 and V2: air supply source 300 is inflated in gas storage unit 140, and the gas in gas storage unit 140 is delivered to vacuum chamber 200, and fast aeration path 110 and at a slow speed gas fill port 120 disconnect.
6) source of the gas decompression supplemental inflatable:
Open V4, turn off V1, V2, V3: the gas in gas storage unit 140 is delivered to vacuum chamber 200, fast aeration path 110 and at a slow speed gas fill port 120 disconnect, and air supply source 300 does not provide gas to fast aeration path 110, at a slow speed gas fill port 120 and supplemental inflatable path 130.
In one embodiment of the invention, the inflation gas circuit 100 of the embodiment of the present invention may be used for plasma etching machine, for inflating to the transmission cavity in plasma etching machine and load chamber, makes transmission cavity and load chamber be filled to atmospheric pressure state.Certainly it will be appreciated by persons skilled in the art that the inflation gas circuit 100 of the embodiment of the present invention is not limited thereto, the device that other need inflation can also be applied to.
It should be noted that, the semiconductor processing equipment 1000 of above-mentioned explanation can be plasma etching machine, also can utilize the plasma processing of described inflation gas circuit for any other.
Provide three grades of inflation gas circuits in parallel according to the semiconductor processing equipment of the embodiment of the present invention, have the following advantages:
1, flexible working mode, adaptable.This inflation gas circuit 100 has 6 kinds of different mode of operations, for source pressure oscillation, die, gas supply capacity is not enough etc., and situation has good adaptive capacity.Particularly when the caliber of the steam line of manufacturer's source of the gas is less, utilize the inflation gas circuit 100 of the embodiment of the present invention still can ensure aeration speed hit the target, and air feed caliber need not be increased.
2, ability of filling soon is strong.When not changing existing operated pneumatic valve size and manufacturer's steam line, the inflation gas circuit 100 of the embodiment of the present invention can utilize the dual air feed of air supply source 300 and gas storage element 140 simultaneously, thus greatly can improve aeration speed.
3, gas storage unit volume can be set to smaller size smaller.The inflation gas circuit 100 of the embodiment of the present invention have employed air supply source 300 and the dual air feed of gas storage element 140, complements one another.Therefore the volume of gas storage unit 140 can be less than the volume of vacuum chamber 200.Even if thus still can obtain comparatively compact gas circuit structure when vacuum chamber 200 volume is larger, convenient on equipment, carry out mounting arrangements.
4, the efficiency of inflation is high.Because gas storage unit 140 volume of the inflation gas circuit 100 of the embodiment of the present invention is less, the time be full of needed for it is short.In addition, owing to have employed air supply source 300 and the dual plenum system of gas storage element 140, even if cannot gassy storage element 140 twice inflation interim, air supply source 300 also can be utilized to complete inflation to vacuum chamber 200, thus aeration speed faster can be allowed.
5, debugging is convenient, maintenance cost is low.Owing to being a part for semiconductor processing equipment instead of the mill construction of independent larger volume for the gas storage unit of gas storage, thus the volume of whole semiconductor processing equipment greatly reduces, and reduces the complexity of system debug and maintenance.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments without departing from the principles and spirit of the present invention, scope of the present invention is by claims and equivalency thereof.
Claims (10)
1. a semiconductor processing equipment, is characterized in that, comprising:
Vacuum chamber, described vacuum chamber comprises air inlet; And
Inflation gas circuit, described inflation gas circuit is connected with the air inlet of described vacuum chamber, and for inflating to described vacuum chamber, wherein said inflation gas circuit comprises:
Fast aeration path, at a slow speed gas fill port and supplemental inflatable path, wherein, described fast aeration path, at a slow speed gas fill port and supplemental inflatable path in parallel to be connected between air supply source and vacuum chamber and at least one in described fast aeration path, at a slow speed gas fill port and supplemental inflatable path can conducting; And
Described supplemental inflatable path is provided with gas storage unit, described gas storage unit is used for stored-gas, the gas stored in described gas storage unit can be delivered to described vacuum chamber by described supplemental inflatable path, for auxiliary described fast aerating air and described inflation of inflating at a slow speed gas circuit.
2. semiconductor processing equipment as claimed in claim 1, it is characterized in that, the aeration speed of described fast aeration path and described gas fill port is at a slow speed adjustable.
3. semiconductor processing equipment as claimed in claim 2, is characterized in that, described fast aeration path is provided with the first control valve and adjuster valve, wherein, described first control valve is arranged on the side of contiguous described air supply source, disconnects for the connected sum controlling described fast aeration path, and
Described adjuster valve is arranged on the side of contiguous described vacuum chamber, for regulating the aeration speed of described fast aeration path.
4. semiconductor processing equipment as claimed in claim 1, is characterized in that, described gas fill port is at a slow speed provided with the second control valve, described second control valve for described in controlling at a slow speed the connected sum of gas fill port disconnect.
5. semiconductor processing equipment as claimed in claim 1, it is characterized in that, described supplemental inflatable path is provided with the 3rd control valve and the 4th control valve, wherein, described 3rd control valve is arranged on the side of contiguous described air supply source, 4th control valve is arranged on the side of contiguous described vacuum chamber, and described gas storage unit is between described 3rd control valve and the 4th control valve, and described 3rd control valve and described 4th control valve disconnect for the connected sum controlling described supplemental inflatable path.
6. semiconductor processing equipment as claimed in claim 5, it is characterized in that, described supplemental inflatable path is also provided with unidirectional valve, described unidirectional valve between described 3rd control valve and described gas storage unit, for preventing the back flow of gas in described gas storage unit.
7. semiconductor processing equipment as claimed in claim 1, it is characterized in that, described inflation gas circuit also comprises one or two or three pressure regulating valves, wherein,
When described inflation gas circuit comprises a pressure regulating valve, described pressure regulating valve is at described air supply source with between described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path, and described pressure regulating valve is connected with described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path respectively;
When described inflation gas circuit comprises two pressure regulating valves, one of them pressure regulating valve is between described air supply source and any two paths of described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path, be connected with described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path any two respectively, another pressure regulating valve is between remaining gas fill port;
When described inflation gas circuit comprises three pressure regulating valves, described each pressure regulating valve lays respectively between described air supply source and described every bar gas fill port.
8. the semiconductor processing equipment as described in claim 1 or 7, is characterized in that, described inflation gas circuit also comprises one, two or three filters, wherein,
When described inflation gas circuit comprises a filter, described filter bits is in described fast aeration path, described gas fill port at a slow speed and to be connected with described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path respectively between described supplemental inflatable path and described vacuum chamber;
When described inflation gas circuit comprises two filters, one of them filter bits in and between any two paths being connected to described fast aeration path, described gas fill port at a slow speed and described supplemental inflatable path and described vacuum chamber, another filter bits is between remaining gas fill port and described vacuum chamber;
When described inflation gas circuit comprises three filters, described each filter lays respectively between every bar gas fill port and described vacuum chamber, is delivered to the gas of described vacuum chamber for filtering corresponding gas fill port.
9. semiconductor processing equipment as claimed in claim 1, it is characterized in that, described inflation gas circuit comprises following six kinds of mode of operations:
1) described fast aeration path is inflated in described vacuum chamber, and described air supply source is inflated in described gas storage unit, and described gas fill port at a slow speed disconnects;
2) described in, gas fill port is inflated in described vacuum chamber at a slow speed, and described fast aeration path and described supplemental inflatable path disconnect;
3) described in, gas fill port is inflated in described vacuum chamber at a slow speed, and described air supply source is inflated in described gas storage unit, and described fast aeration path disconnects;
4) described in, gas fill port is inflated in described vacuum chamber at a slow speed, and described air supply source is inflated in described gas storage unit, and the gas in described gas storage unit is delivered to described vacuum chamber, and described fast aeration path disconnects;
5) described air supply source is inflated in described gas storage unit, and the gas in described gas storage unit is delivered to described vacuum chamber, described quick and gas fill port disconnection at a slow speed; And
6) gas in described gas storage unit is delivered to described vacuum chamber, described quick and gas fill port disconnection at a slow speed.
10. semiconductor processing equipment as claimed in claim 1, it is characterized in that, described semiconductor processing equipment is plasma etching machine.
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| JP6107327B2 (en) * | 2013-03-29 | 2017-04-05 | 東京エレクトロン株式会社 | Film forming apparatus, gas supply apparatus, and film forming method |
| CN104979189B (en) * | 2015-06-29 | 2017-12-08 | 北京工业大学 | A kind of method for etching plasma that regular figure is prepared based on substrate crystal orientation regulation and control |
| CN105401132A (en) * | 2015-12-14 | 2016-03-16 | 中国电子科技集团公司第四十八研究所 | Fast and slow inflation device for vacuum cavity |
| CN105846290B (en) * | 2016-06-22 | 2018-12-14 | 中国科学院光电研究院 | A kind of high-purity working gas delivery system of excimer laser and method |
| CN108118310B (en) * | 2017-12-20 | 2020-02-07 | 湖南红太阳光电科技有限公司 | Vacuum exhaust system of five-tube PECVD (plasma enhanced chemical vapor deposition) equipment |
| CN111520613B (en) * | 2020-04-26 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Integrated gas supply system, gas path switching mechanism thereof and semiconductor epitaxial equipment |
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