CN102205522B - Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment - Google Patents

Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment Download PDF

Info

Publication number
CN102205522B
CN102205522B CN 201110135437 CN201110135437A CN102205522B CN 102205522 B CN102205522 B CN 102205522B CN 201110135437 CN201110135437 CN 201110135437 CN 201110135437 A CN201110135437 A CN 201110135437A CN 102205522 B CN102205522 B CN 102205522B
Authority
CN
China
Prior art keywords
positive pressure
gas
mechanical polishing
pressure system
malleation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN 201110135437
Other languages
Chinese (zh)
Other versions
CN102205522A (en
Inventor
张辉
门延武
王同庆
路新春
叶佩青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Original Assignee
Tsinghua University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to CN 201110135437 priority Critical patent/CN102205522B/en
Publication of CN102205522A publication Critical patent/CN102205522A/en
Application granted granted Critical
Publication of CN102205522B publication Critical patent/CN102205522B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

The invention discloses a gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment. The gas path positive pressure system comprises a gas source and a plurality of positive pressure channels, wherein the plurality of positive pressure channels are connected with each other in parallel and respectively connected with the gas source; each positive pressure channel comprises a filter, a switching valve group, a positive pressure branch and a gas supply branch pipe, wherein the switching valve group is connected with the filter, the positive pressure branch and the gas supply branch pipe are connected in parallel between the gas source and the switching valve group so that the switching valve group communicates the gas source and the filter selectively through the positive pressure branch and the gas supply branch pipe, and the positive pressure branch comprises an electrically-controlled proportional valve. According to the gas path positive pressure system used for chemico-mechanical polishing, disclosed by the embodiment of the invention, the positive pressure channels are not affected with each other so that the added gas supply branch pipe is beneficial to shortening of aeration time of a chamber under the condition of not damaging pressure precision.

Description

The gas circuit positive pressure system and the chemical-mechanical polisher that are used for chemically mechanical polishing
Technical field
The present invention relates to a kind of gas circuit positive pressure system for chemically mechanical polishing, a kind of chemical-mechanical polisher that adopts this system is set especially.
Background technology
Chemically mechanical polishing is the most effective technology of wafer overall situation planarization in the semiconductor fabrication process.In copper/throwings silicon field was thrown in chemically mechanical polishing, rubbing head clamping silicon chip will copper layer/silicon face be thrown be pressed to the polishing disk of rotation, corroded by the polishing pad friction on the polishing disk and polishing fluid and realized that copper/silicon removes fast and effectively.Wherein, rubbing head can be by the overall dynamic adjustments of each annulus chamber pressure realization of control silicon chip back side to silicon wafer polishing pressure.
The rubbing head internal chamber is equivalent to a plurality of airtight chamber, inflatable with shrink, can push mutually between the chamber or without extruding.When chemically mechanical polishing is polished, intercouple between each chamber, coupling between the chamber mainly contains two kinds of situations: a kind of is the volume coupling, be the extruding between each chamber or the variation of shrinking the initiation cavity volume, another kind is source of the gas input coupling, causes source of the gas moment air supply pressure fluctuation when each chamber pressurizes simultaneously.The common solution of situation for the volume coupling is the ways such as change structure design or software compensation; And source of the gas input coupling can realize by changing the design of gas circuit control structure.
In addition, inflation for the larger chamber of some volume often begins pressurization from vacuum state, required source of the gas energy is larger, pressing time is longer, if yet but the proportioning valve of changing large flow pressurize and lost precision, how to guarantee that therefore the time that the precision of pressurizeing can shorten again inflation also is the key point of gas circuit control structure design.
Summary of the invention
The present invention is intended to one of solve the problems of the technologies described above at least.For this reason, one object of the present invention is to propose a kind of gas circuit positive pressure system that is used for chemically mechanical polishing that had not only guaranteed the characteristics of not losing pressure precision but also having fast aeration.
Another object of the present invention is to propose a kind of chemical-mechanical polisher with above-mentioned chemically mechanical polishing gas circuit positive pressure system.
To achieve these goals, the first aspect of the embodiment of the invention provides a kind of gas circuit positive pressure system for chemically mechanical polishing, comprise: source of the gas and many malleation paths, described many malleation paths are connected in parallel to each other and link to each other with described source of the gas respectively, every described malleation path includes: filter, switch valve group and malleation branch road and gas manifold, and described switch valve group links to each other with described filter; Described malleation branch road and described gas manifold are connected in parallel between described source of the gas and the described switch valve group so that described switch valve group selection ground is communicated with described source of the gas by described malleation branch road and described gas manifold with described filter, and wherein said malleation branch road comprises electronically controlled proportional valve.
The gas circuit positive pressure system that is used for chemically mechanical polishing according to the embodiment of the invention, effectively overcome the impact of source of the gas input coupling, be independent of each other between each malleation path, and because the malleation arm that source of the gas links to each other with switch valve group serial connection has the ability of fast aeration, so that the inflationtime that is conducive to further shorten chamber in the situation of pressure precision is not lost in the assurance that is added on of this gas manifold, existing inflationtime is roughly 3 seconds by roughly shortening in 10 seconds.
In addition, the gas circuit positive pressure system for chemically mechanical polishing according to the above embodiment of the present invention can also have following additional technical characterictic:
According to one embodiment of present invention, described malleation branch road also comprises the air bag of connecting with described electronically controlled proportional valve.
According to examples more of the present invention, described malleation branch road also comprises the pressure-reducing valve of connecting with described electronically controlled proportional valve and described air bag.
According to some embodiments of the present invention, described switch valve group is a three-position three-way valve.
According to some embodiments of the present invention, described switch valve group is composed in parallel by two two-way valves.
According to some embodiments of the present invention, described switch valve group is composed in series by a two-bit triplet and a two-way valve.
Second aspect present invention proposes a kind of chemical-mechanical polisher, comprising: rubbing head and gas circuit positive pressure system are limited with a plurality of sealed chamber in the described rubbing head; Described gas circuit positive pressure system is the described gas circuit positive pressure system for chemically mechanical polishing of first aspect present invention, and a plurality of filters of described many malleation paths of wherein said gas circuit positive pressure system are communicated with described a plurality of sealed chamber respectively correspondingly.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the structural representation according to the gas circuit positive pressure system of embodiment of the invention chemically mechanical polishing; With
Fig. 2-Fig. 6 is the structural representation according to different embodiments of the invention switch valve group.
The specific embodiment
The below describes embodiments of the invention in detail, and the example of described embodiment is shown in the drawings, and wherein identical or similar label represents identical or similar element or the element with identical or similar functions from start to finish.Be exemplary below by the embodiment that is described with reference to the drawings, only be used for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center "; " vertically "; " laterally "; " on "; D score; " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of indications such as " outward " are based on orientation shown in the drawings or position relationship, only be for convenience of description the present invention and simplified characterization, rather than device or the element of indication or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " only are used for describing purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, need to prove that unless clear and definite regulation and restriction are arranged in addition, term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be to be fixedly connected with, also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can indirectly link to each other by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
Below with reference to gas circuit positive pressure system and the chemical-mechanical polisher of accompanying drawing description according to the chemically mechanical polishing of the embodiment of the invention.
Referring to Fig. 1-2, gas circuit positive pressure system according to chemically mechanical polishing provided by the invention, comprise: source of the gas 20 and many malleation paths 10 (L1-Ln represents respectively every malleation path as shown in Figure 1), many malleation paths 10 are connected in parallel to each other and link to each other with source of the gas 20 respectively.Send respectively the pressed gas in the source of the gas 20 to a plurality of chambers 30 (representing respectively each chamber such as the Z1-Zn among Fig. 1) by many malleation paths 10, the corresponding setting with rubbing head of each chamber, can by the pressure in each chamber of control, realize the global regulation to silicon wafer polishing pressure.
Particularly, every malleation path (such as the L1-Ln among Fig. 1) includes: filter 15, switch valve group 15 and malleation branch road A1 and gas manifold A2, and switch valve group 14 links to each other with filter 15; Malleation branch road A1 and gas manifold A2 are connected in parallel between source of the gas 20 and the switch valve group 14 so that switch valve group 14 optionally is communicated with source of the gas 20 by malleation branch road A1 and gas manifold A2 with filter 15, can come as required like this pressure and the pressurising speed of chamber (such as Z1-Zn among the figure) are adjusted.
Many malleation paths 10 corresponding with a plurality of chambers (corresponding one by one such as L1-Ln among Fig. 1 and Z1-Zn) for convenient control, improve the degree of accuracy of control, wherein can include electronically controlled proportional valve 13 among the malleation branch road A1.
The gas circuit positive pressure system that is used for chemically mechanical polishing according to the embodiment of the invention, effectively overcome the impact of source of the gas input coupling, be independent of each other between each malleation path, and because the gas manifold A2 that source of the gas 20 links to each other with switch valve group 14 serial connections has the ability of fast aeration, so that the inflationtime that is conducive to further shorten chamber in the situation of pressure precision is not lost in the assurance that is added on of this gas manifold A2, existing inflationtime is roughly 3 seconds by roughly shortening in 10 seconds.
Referring to Fig. 1, according to one embodiment of present invention, malleation branch road A1 also comprises the air bag 12 of connecting with electronically controlled proportional valve 13.Can improve the pressure controling precision of malleation branch road A1 by air bag 12 is set, make the expansion of chamber and contraction more accurate, improve the polishing efficiency of rubbing head.
Referring to Fig. 1, according to examples more of the present invention, malleation branch road A1 also comprises the pressure-reducing valve 11 of connecting with electronically controlled proportional valve 13 and air bag 12.Pressure-reducing valve 11 convenience are controlled the pressure of the gas of input malleation branch road, have improved the degree of accuracy of the pressure of malleation branch road A1 output pressure gas.
Referring to Fig. 2, according to some embodiments of the present invention, switch valve group 14 can be a three-position three-way valve 63_1, and malleation branch road A1 and gas manifold A2 directly are connected with filter by three-position three-way valve 63_1.
Referring to Fig. 3, according to some embodiments of the present invention, switch valve group 14 can be composed in parallel by two two-way valves (such as the 63_2 among Fig. 3 and 63_3), and the branch road that malleation branch road A1 and gas manifold A2 are divided into respectively two parallel connections is communicated with filter 15.
Referring to Fig. 4, according to some embodiments of the present invention, switch valve group 14 is composed in series by a two-bit triplet 63_1 and a two-way valve 63_2.Wherein, gas manifold A2 connects with two-way valve 63_2, and is in parallel with two-bit triplet 63_1 through two-way valve 63_2 and malleation branch road A1.
Referring to Fig. 5-6, according to some embodiments of the present invention, described switch valve group 14 can according to the demand of whether connecting atmosphere or vacuum, be come stacked switch valve group 14.For example, switch valve group 14 can be made of a plurality of 2/2-way valves, and perhaps 2/2-way valve combination two-position three-way valve consists of.
Chemical-mechanical polisher according to the embodiment of the invention is described below, comprises: rubbing head and gas circuit positive pressure system are limited with a plurality of sealed chamber (such as the Z1-Zn among Fig. 1) in the rubbing head; The gas circuit positive pressure system is the gas circuit positive pressure system that is used for chemically mechanical polishing of the above embodiment of the present invention, and wherein a plurality of filters 15 of many malleation paths 10 of gas circuit positive pressure system are communicated with a plurality of sealed chamber (such as the Z1-Zn among Fig. 1) respectively correspondingly.
Chemical-mechanical polisher according to the embodiment of the invention, effectively overcome the impact of source of the gas input coupling, be independent of each other between each malleation path, and because the gas manifold A2 that source of the gas 20 links to each other with switch valve group 14 serial connections has the ability of fast aeration, so that the inflationtime that is conducive to further shorten chamber in the situation of pressure precision is not lost in the assurance that is added on of this gas manifold A2, existing inflationtime is roughly 3 seconds by roughly shortening in 10 seconds.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or the example in conjunction with specific features, structure, material or the characteristics of this embodiment or example description.In this manual, the schematic statement of above-mentioned term not necessarily referred to identical embodiment or example.And the specific features of description, structure, material or characteristics can be with suitable mode combinations in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple variation, modification, replacement and modification to these embodiment in the situation that does not break away from principle of the present invention and aim, scope of the present invention is limited by claim and equivalent thereof.

Claims (7)

1. a gas circuit positive pressure system that is used for chemically mechanical polishing is characterized in that, comprising:
Source of the gas; With
Many malleation paths, described many malleation paths are connected in parallel to each other and link to each other with described source of the gas respectively, and every described malleation path includes:
Filter;
The switch valve group, described switch valve group links to each other with described filter; And
Malleation branch road and gas manifold, described malleation branch road and described gas manifold are connected in parallel between described source of the gas and the described switch valve group so that described switch valve group selection ground is communicated with described source of the gas by described malleation branch road and described gas manifold with described filter, and wherein said malleation branch road comprises electronically controlled proportional valve.
2. the gas circuit positive pressure system for chemically mechanical polishing according to claim 1, it is characterized in that: described malleation branch road also comprises the air bag of connecting with described electronically controlled proportional valve, described air bag is connected between described source of the gas and the described electronically controlled proportional valve.
3. the gas circuit positive pressure system for chemically mechanical polishing according to claim 2, it is characterized in that: described malleation branch road also comprises the pressure-reducing valve of connecting with described electronically controlled proportional valve and described air bag, and described pressure-reducing valve is connected between described air bag and the described source of the gas.
4. each described gas circuit positive pressure system for chemically mechanical polishing according to claim 1-3, it is characterized in that: described switch valve group is a three-position three-way valve.
5. each described gas circuit positive pressure system for chemically mechanical polishing according to claim 1-3, it is characterized in that: described switch valve group is composed in parallel by two two-way valves.
6. each described gas circuit positive pressure system for chemically mechanical polishing according to claim 1-3, it is characterized in that: described switch valve group is composed in series by a two-bit triplet and a two-way valve.
7. a chemical-mechanical polisher is characterized in that, comprising:
Rubbing head is limited with a plurality of sealed chamber in the described rubbing head; With
The gas circuit positive pressure system, described gas circuit positive pressure system be according to claim 1-6 in each described gas circuit positive pressure system for chemically mechanical polishing, a plurality of filters of described many malleation paths of wherein said gas circuit positive pressure system are communicated with described a plurality of sealed chamber respectively correspondingly.
CN 201110135437 2011-05-24 2011-05-24 Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment Active CN102205522B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201110135437 CN102205522B (en) 2011-05-24 2011-05-24 Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201110135437 CN102205522B (en) 2011-05-24 2011-05-24 Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment

Publications (2)

Publication Number Publication Date
CN102205522A CN102205522A (en) 2011-10-05
CN102205522B true CN102205522B (en) 2013-01-30

Family

ID=44694740

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201110135437 Active CN102205522B (en) 2011-05-24 2011-05-24 Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment

Country Status (1)

Country Link
CN (1) CN102205522B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102490120B (en) * 2011-11-29 2013-10-09 清华大学 Adaptive inverse control system for chemical-mechanical polishing machine
CN106239371B (en) * 2016-09-26 2018-10-16 天津华海清科机电科技有限公司 Trimmer gas handling system and polishing machine
CN106378710B (en) * 2016-09-28 2018-09-04 天津华海清科机电科技有限公司 Trimmer gas handling system and polishing machine
FR3064621B1 (en) 2017-04-03 2022-02-18 Fluigent MICROFLUIDIC DEVICE

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6135858A (en) * 1997-07-03 2000-10-24 Canon Kabushiki Kaisha Substrate holding device and polishing method and polishing apparatus using the same
CN2712547Y (en) * 2003-12-27 2005-07-27 上海华虹(集团)有限公司 Polishing head structure for chemical mechanical polishing
JP2009255235A (en) * 2008-04-17 2009-11-05 Nikon Corp Polishing apparatus
CN201579701U (en) * 2009-11-26 2010-09-15 中国电子科技集团公司第四十五研究所 Lower pressure control system of CMP polishing pad finisher

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3922887B2 (en) * 2001-03-16 2007-05-30 株式会社荏原製作所 Dresser and polishing device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6135858A (en) * 1997-07-03 2000-10-24 Canon Kabushiki Kaisha Substrate holding device and polishing method and polishing apparatus using the same
CN2712547Y (en) * 2003-12-27 2005-07-27 上海华虹(集团)有限公司 Polishing head structure for chemical mechanical polishing
JP2009255235A (en) * 2008-04-17 2009-11-05 Nikon Corp Polishing apparatus
CN201579701U (en) * 2009-11-26 2010-09-15 中国电子科技集团公司第四十五研究所 Lower pressure control system of CMP polishing pad finisher

Also Published As

Publication number Publication date
CN102205522A (en) 2011-10-05

Similar Documents

Publication Publication Date Title
CN102205522B (en) Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment
CN102133729B (en) Pressure control system for CMP (Chemical Mechanical Polishing) head
US7032895B2 (en) Closed level control system for a vehicle with the system having two pressure stores
KR100849500B1 (en) double check valve with floating function
US4731997A (en) Device for storing and releasing energy
CN106457952B (en) Compressed air supplies facility and its operation method and pneumatic system
CN201740702U (en) Hydraulic system of horizontal push butt clamp type test machine
CN103842663A (en) Control system for operating work device for construction machine
CN203584943U (en) Change-over valve and load sensitive system with same
CN102751170B (en) Semiconductor processing device
AU2013265872B2 (en) Working device energy recovery system
CN103591083A (en) Hydraulic test stand for oil cylinders
CN104806596A (en) Mechanical hydraulic oil source selecting valve
CN102168696A (en) High-low pressure switching control system, concrete pumping system and device
CN101224625A (en) High pressure model-locked loop of double movable plate direct press injection machine
CN102062132A (en) Hydraulic control system
CN101508307A (en) Rail vehicle non-skid vent valve based on double-piezoelectricity guide valve
CN203348041U (en) Box cavity vacuumizing device and box aligning device
CN207015284U (en) A kind of poke-rod type shift switch system for being integrated in stacked switch
CN106378710B (en) Trimmer gas handling system and polishing machine
CN102133732B (en) Air course positive pressure access systems for CMP polishing head
CN201110806Y (en) Pressure switch durability testing stand
KR20190037765A (en) Electric brake system
CN108115474B (en) Cylindrical grinding machine for quartz glass and grinding method thereof
CN110466305B (en) ECAS distributing valve assembly

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant