CN102205522A - Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment - Google Patents
Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment Download PDFInfo
- Publication number
- CN102205522A CN102205522A CN 201110135437 CN201110135437A CN102205522A CN 102205522 A CN102205522 A CN 102205522A CN 201110135437 CN201110135437 CN 201110135437 CN 201110135437 A CN201110135437 A CN 201110135437A CN 102205522 A CN102205522 A CN 102205522A
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- Prior art keywords
- positive pressure
- gas
- mechanical polishing
- pressure system
- malleation
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- 238000005498 polishing Methods 0.000 title claims abstract description 35
- 238000004904 shortening Methods 0.000 abstract description 7
- 238000005273 aeration Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Multiple-Way Valves (AREA)
Abstract
The invention discloses a gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment. The gas path positive pressure system comprises a gas source and a plurality of positive pressure channels, wherein the plurality of positive pressure channels are connected with each other in parallel and respectively connected with the gas source; each positive pressure channel comprises a filter, a switching valve group, a positive pressure branch and a gas supply branch pipe, wherein the switching valve group is connected with the filter, the positive pressure branch and the gas supply branch pipe are connected in parallel between the gas source and the switching valve group so that the switching valve group communicates the gas source and the filter selectively through the positive pressure branch and the gas supply branch pipe, and the positive pressure branch comprises an electrically-controlled proportional valve. According to the gas path positive pressure system used for chemico-mechanical polishing, disclosed by the embodiment of the invention, the positive pressure channels are not affected with each other so that the added gas supply branch pipe is beneficial to shortening of aeration time of a chamber under the condition of not damaging pressure precision.
Description
Technical field
The present invention relates to a kind of gas circuit positive pressure system that is used for chemically mechanical polishing, a kind of chemical-mechanical polisher that adopts this system is set especially.
Background technology
Chemically mechanical polishing is the otherwise effective technique of wafer overall situation planarization in the semiconductor fabrication process.Throw in copper/throwing silicon field in chemically mechanical polishing, rubbing head clamping silicon chip will wait to throw the polishing disk that copper layer/silicon face is pressed to rotation, realize that by polishing pad friction on the polishing disk and polishing fluid corrosion copper/silicon removes fast and effectively.Wherein, rubbing head can be by the overall dynamic adjustments of each annulus chamber pressure realization of the control silicon chip back side to silicon wafer polishing pressure.
The rubbing head internal chamber is equivalent to a plurality of airtight chamber, and extruding can be pushed or not have to inflatable and contraction mutually between the chamber.When chemically mechanical polishing is polished, intercouple between each chamber, coupling between the chamber mainly contains two kinds of situations: a kind of is the volume coupling, be extruding between each chamber or the variation of shrinking the initiation cavity volume, another kind is source of the gas input coupling, causes source of the gas moment air supply pressure fluctuation when each chamber pressurizes simultaneously.For the common way that solves of the situation of volume coupling is to change ways such as structural design or software compensation; And source of the gas input coupling can realize by changing the design of gas circuit control structure.
In addition, inflation for the big chamber of some volume often begins pressurization from vacuum state, required source of the gas energy is bigger, pressing time is longer, if yet but the proportioning valve of changing big flow pressurize and lost precision, how to guarantee that therefore the time that the precision of pressurizeing can shorten inflation again also is the key point of gas circuit control structure design.
Summary of the invention
The present invention is intended to one of solve the problems of the technologies described above at least.For this reason, one object of the present invention is to propose a kind of gas circuit positive pressure system that is used for chemically mechanical polishing that had not only guaranteed the characteristics of not losing pressure precision but also having fast aeration.
Another object of the present invention is to propose a kind of chemical-mechanical polisher with above-mentioned chemically mechanical polishing gas circuit positive pressure system.
To achieve these goals, the first aspect of the embodiment of the invention provides a kind of gas circuit positive pressure system that is used for chemically mechanical polishing, comprise: source of the gas and many malleation paths, described many malleation paths are connected in parallel to each other and link to each other with described source of the gas respectively, every described malleation path includes: filter, switch valve group and malleation branch road and gas manifold, and described switch valve group links to each other with described filter; Described malleation branch road and described gas manifold are connected in parallel between described source of the gas and the described switch valve group so that described switch valve group selection ground is communicated with described source of the gas by described malleation branch road and described gas manifold with described filter, and wherein said malleation branch road comprises electronically controlled proportional valve.
The gas circuit positive pressure system that is used for chemically mechanical polishing according to the embodiment of the invention, effectively overcome the influence of source of the gas input coupling, be independent of each other between each malleation path, and because the malleation arm that source of the gas links to each other with switch valve group serial connection has the ability of fast aeration, make the assurance that is added on of this gas manifold not lose the inflationtime that helps further shortening chamber under the situation of pressure precision, existing inflationtime is roughly 3 seconds by roughly shortening in 10 seconds.
In addition, the gas circuit positive pressure system that is used for chemically mechanical polishing according to the above embodiment of the present invention can also have following additional technical characterictic:
According to one embodiment of present invention, described malleation branch road also comprises the air bag of connecting with described electronically controlled proportional valve.
According to examples more of the present invention, described malleation branch road also comprises the pressure-reducing valve of connecting with described electronically controlled proportional valve and described air bag.
According to some embodiments of the present invention, described switch valve group is a 3-position-3-way valve.
According to some embodiments of the present invention, described switch valve group is composed in parallel by two two-way valves.
According to some embodiments of the present invention, described switch valve group is composed in series by a two-bit triplet and a two-way valve.
Second aspect present invention proposes a kind of chemical-mechanical polisher, comprising: rubbing head and gas circuit positive pressure system are limited with a plurality of sealed chamber in the described rubbing head; Described gas circuit positive pressure system is the described gas circuit positive pressure system that is used for chemically mechanical polishing of first aspect present invention, and a plurality of filters of described many malleation paths of wherein said gas circuit positive pressure system are communicated with described a plurality of sealed chamber respectively correspondingly.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously and easily understanding becoming the description of embodiment in conjunction with following accompanying drawing, wherein:
Fig. 1 is the structural representation according to the gas circuit positive pressure system of embodiment of the invention chemically mechanical polishing; With
Fig. 2-Fig. 6 is the structural representation according to different embodiments of the invention switch valve group.
The specific embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Below by the embodiment that is described with reference to the drawings is exemplary, only is used to explain the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center "; " vertically "; " laterally "; " on "; D score; " preceding ", " back ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", close the orientation of indications such as " outward " or position is based on orientation shown in the drawings or position relation, only be that the present invention for convenience of description and simplification are described, rather than the device or the element of indication or hint indication must have specific orientation, therefore orientation structure and operation with specific can not be interpreted as limitation of the present invention.In addition, term " first ", " second " only are used to describe purpose, and can not be interpreted as indication or hint relative importance.
In description of the invention, need to prove that unless clear and definite regulation and qualification are arranged in addition, term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be fixedly connected, also can be to removably connect, or connect integratedly; Can be mechanical connection, also can be to be electrically connected; Can be directly to link to each other, also can link to each other indirectly by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete implication in the present invention.
Below with reference to gas circuit positive pressure system and the chemical-mechanical polisher of accompanying drawing description according to the chemically mechanical polishing of the embodiment of the invention.
Referring to Fig. 1-2, gas circuit positive pressure system according to chemically mechanical polishing provided by the invention, comprise: source of the gas 20 and many malleation paths 10 (L1-Ln represents every malleation path respectively as shown in Figure 1), many malleation paths 10 are connected in parallel to each other and link to each other with source of the gas 20 respectively.Send the pressed gas in the source of the gas 20 to a plurality of chambers 30 (representing each chamber respectively) respectively by many malleation paths 10 as the Z1-Zn among Fig. 1, the corresponding setting of each chamber with rubbing head, can realize The global regulation by the pressure in each chamber of control to silicon wafer polishing pressure.
Particularly, every malleation path (as the L1-Ln among Fig. 1) includes: filter 15, switch valve group 15 and malleation branch road A1 and gas manifold A2, and switch valve group 14 links to each other with filter 15; Malleation branch road A1 and gas manifold A2 are connected in parallel between source of the gas 20 and the switch valve group 14 so that switch valve group 14 optionally is communicated with source of the gas 20 by malleation branch road A1 and gas manifold A2 with filter 15, can come as required like this pressure and the pressurising speed of chamber (as Z1-Zn among the figure) are adjusted.
The gas circuit positive pressure system that is used for chemically mechanical polishing according to the embodiment of the invention, effectively overcome the influence of source of the gas input coupling, be independent of each other between each malleation path, and because the gas manifold A2 that source of the gas 20 links to each other with switch valve group 14 serial connections has the ability of fast aeration, make the assurance that is added on of this gas manifold A2 not lose the inflationtime that helps further shortening chamber under the situation of pressure precision, existing inflationtime is roughly 3 seconds by roughly shortening in 10 seconds.
Referring to Fig. 1, according to one embodiment of present invention, malleation branch road A1 also comprises the air bag 12 of connecting with electronically controlled proportional valve 13.By the pressure controling precision that air bag 12 can improve malleation branch road A1 is set, make the expansion of chamber and contraction more accurate, improve the polishing efficiency of rubbing head.
Referring to Fig. 1, according to examples more of the present invention, malleation branch road A1 also comprises the pressure-reducing valve 11 of connecting with electronically controlled proportional valve 13 and air bag 12.Pressure-reducing valve 11 convenience are controlled the pressure of the gas of input malleation branch road, have improved the degree of accuracy of the pressure of malleation branch road A1 output pressure gas.
Referring to Fig. 2, according to some embodiments of the present invention, switch valve group 14 can be a 3-position-3-way valve 63_1, and malleation branch road A1 and gas manifold A2 directly are connected with filter by 3-position-3-way valve 63_1.
Referring to Fig. 3, according to some embodiments of the present invention, switch valve group 14 can be composed in parallel by two two-way valves (as 63_2 among Fig. 3 and 63_3), and the branch road that malleation branch road A1 and gas manifold A2 are divided into two parallel connections respectively is communicated with filter 15.
Referring to Fig. 4, according to some embodiments of the present invention, switch valve group 14 is composed in series by a two-bit triplet 63_1 and a two-way valve 63_2.Wherein, gas manifold A2 connects with two-way valve 63_2, and is in parallel with two-bit triplet 63_1 through two-way valve 63_2 and malleation branch road A1.
Referring to Fig. 5-6, according to some embodiments of the present invention, described switch valve group 14 can be come stacked switch valve group 14 according to the demand of whether connecting atmosphere or vacuum.For example, switch valve group 14 can be made of a plurality of 2/2-way valves, and perhaps 2/2-way valve combination two-position three-way valve constitutes.
Chemical-mechanical polisher according to the embodiment of the invention is described below, comprises: rubbing head and gas circuit positive pressure system are limited with a plurality of sealed chamber (as the Z1-Zn among Fig. 1) in the rubbing head; The gas circuit positive pressure system is the gas circuit positive pressure system that is used for chemically mechanical polishing of the above embodiment of the present invention, and wherein a plurality of filters 15 of many malleation paths 10 of gas circuit positive pressure system are communicated with a plurality of sealed chamber (as the Z1-Zn among Fig. 1) respectively correspondingly.
Chemical-mechanical polisher according to the embodiment of the invention, effectively overcome the influence of source of the gas input coupling, be independent of each other between each malleation path, and because the gas manifold A2 that source of the gas 20 links to each other with switch valve group 14 serial connections has the ability of fast aeration, make the assurance that is added on of this gas manifold A2 not lose the inflationtime that helps further shortening chamber under the situation of pressure precision, existing inflationtime is roughly 3 seconds by roughly shortening in 10 seconds.
In the description of this specification, concrete feature, structure, material or characteristics that the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means in conjunction with this embodiment or example description are contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete feature, structure, material or the characteristics of description can be with the suitable manner combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple variation, modification, replacement and modification to these embodiment under the situation that does not break away from principle of the present invention and aim, scope of the present invention is limited by claim and equivalent thereof.
Claims (7)
1. a gas circuit positive pressure system that is used for chemically mechanical polishing is characterized in that, comprising:
Source of the gas; With
Many malleation paths, described many malleation paths are connected in parallel to each other and link to each other with described source of the gas respectively, and every described malleation path includes:
Filter;
The switch valve group, described switch valve group links to each other with described filter; And
Malleation branch road and gas manifold, described malleation branch road and described gas manifold are connected in parallel between described source of the gas and the described switch valve group so that described switch valve group selection ground is communicated with described source of the gas by described malleation branch road and described gas manifold with described filter, and wherein said malleation branch road comprises electronically controlled proportional valve.
2. the gas circuit positive pressure system that is used for chemically mechanical polishing according to claim 1 is characterized in that: described malleation branch road also comprises the air bag of connecting with described electronically controlled proportional valve.
3. the gas circuit positive pressure system that is used for chemically mechanical polishing according to claim 2 is characterized in that: described malleation branch road also comprises the pressure-reducing valve of connecting with described electronically controlled proportional valve and described air bag.
4. according to each described gas circuit positive pressure system that is used for chemically mechanical polishing among the claim 1-3, it is characterized in that: described switch valve group is a 3-position-3-way valve.
5. according to each described gas circuit positive pressure system that is used for chemically mechanical polishing among the claim 1-3, it is characterized in that: described switch valve group is composed in parallel by two two-way valves.
6. according to each described gas circuit positive pressure system that is used for chemically mechanical polishing among the claim 1-3, it is characterized in that: described switch valve group is composed in series by a two-bit triplet and a two-way valve.
7. a chemical-mechanical polisher is characterized in that, comprising:
Rubbing head is limited with a plurality of sealed chamber in the described rubbing head; With
The gas circuit positive pressure system, described gas circuit positive pressure system is according to each described gas circuit positive pressure system that is used for chemically mechanical polishing among the claim 1-6, and a plurality of filters of described many malleation paths of wherein said gas circuit positive pressure system are communicated with described a plurality of sealed chamber respectively correspondingly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110135437 CN102205522B (en) | 2011-05-24 | 2011-05-24 | Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110135437 CN102205522B (en) | 2011-05-24 | 2011-05-24 | Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102205522A true CN102205522A (en) | 2011-10-05 |
| CN102205522B CN102205522B (en) | 2013-01-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201110135437 Active CN102205522B (en) | 2011-05-24 | 2011-05-24 | Gas path positive pressure system used for chemico-mechanical polishing and chemico-mechanical polishing equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102490120A (en) * | 2011-11-29 | 2012-06-13 | 清华大学 | Adaptive inverse control system for chemical-mechanical polishing machine |
| CN106239371A (en) * | 2016-09-26 | 2016-12-21 | 天津华海清科机电科技有限公司 | Dresser gas handling system and buffing machine |
| CN106378710A (en) * | 2016-09-28 | 2017-02-08 | 天津华海清科机电科技有限公司 | Air inlet system of finisher and polishing machine |
| CN110785235A (en) * | 2017-04-03 | 2020-02-11 | 弗吕根特公司 | Microfluidic device |
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| US6135858A (en) * | 1997-07-03 | 2000-10-24 | Canon Kabushiki Kaisha | Substrate holding device and polishing method and polishing apparatus using the same |
| CN2712547Y (en) * | 2003-12-27 | 2005-07-27 | 上海华虹（集团）有限公司 | Polishing head structure for chemical mechanical polishing |
| US20060270323A1 (en) * | 2001-03-16 | 2006-11-30 | Tetsuji Togawa | Polishing apparatus |
| JP2009255235A (en) * | 2008-04-17 | 2009-11-05 | Nikon Corp | Polishing apparatus |
| CN201579701U (en) * | 2009-11-26 | 2010-09-15 | 中国电子科技集团公司第四十五研究所 | Lower pressure control system of CMP polishing pad finisher |
-
2011
- 2011-05-24 CN CN 201110135437 patent/CN102205522B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6135858A (en) * | 1997-07-03 | 2000-10-24 | Canon Kabushiki Kaisha | Substrate holding device and polishing method and polishing apparatus using the same |
| US20060270323A1 (en) * | 2001-03-16 | 2006-11-30 | Tetsuji Togawa | Polishing apparatus |
| CN2712547Y (en) * | 2003-12-27 | 2005-07-27 | 上海华虹（集团）有限公司 | Polishing head structure for chemical mechanical polishing |
| JP2009255235A (en) * | 2008-04-17 | 2009-11-05 | Nikon Corp | Polishing apparatus |
| CN201579701U (en) * | 2009-11-26 | 2010-09-15 | 中国电子科技集团公司第四十五研究所 | Lower pressure control system of CMP polishing pad finisher |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102490120A (en) * | 2011-11-29 | 2012-06-13 | 清华大学 | Adaptive inverse control system for chemical-mechanical polishing machine |
| CN102490120B (en) * | 2011-11-29 | 2013-10-09 | 清华大学 | Adaptive inverse control system for chemical-mechanical polishing machine |
| CN106239371A (en) * | 2016-09-26 | 2016-12-21 | 天津华海清科机电科技有限公司 | Dresser gas handling system and buffing machine |
| CN106378710A (en) * | 2016-09-28 | 2017-02-08 | 天津华海清科机电科技有限公司 | Air inlet system of finisher and polishing machine |
| CN110785235A (en) * | 2017-04-03 | 2020-02-11 | 弗吕根特公司 | Microfluidic device |
| US11338289B2 (en) | 2017-04-03 | 2022-05-24 | Fluigent | Microfluidic device |
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| Publication number | Publication date |
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| CN102205522B (en) | 2013-01-30 |
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