KR101076159B1 - 반도체 발광 소자 - Google Patents
반도체 발광 소자 Download PDFInfo
- Publication number
- KR101076159B1 KR101076159B1 KR1020060055696A KR20060055696A KR101076159B1 KR 101076159 B1 KR101076159 B1 KR 101076159B1 KR 1020060055696 A KR1020060055696 A KR 1020060055696A KR 20060055696 A KR20060055696 A KR 20060055696A KR 101076159 B1 KR101076159 B1 KR 101076159B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- electrode
- semiconductor light
- layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW094121291 | 2005-06-24 | ||
| TW094121291A TWI291243B (en) | 2005-06-24 | 2005-06-24 | A semiconductor light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060135513A KR20060135513A (ko) | 2006-12-29 |
| KR101076159B1 true KR101076159B1 (ko) | 2011-10-21 |
Family
ID=37545228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060055696A Active KR101076159B1 (ko) | 2005-06-24 | 2006-06-21 | 반도체 발광 소자 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20060289881A1 (https=) |
| JP (1) | JP2007005813A (https=) |
| KR (1) | KR101076159B1 (https=) |
| DE (1) | DE102006028644A1 (https=) |
| TW (1) | TWI291243B (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007032638A1 (en) * | 2005-09-15 | 2007-03-22 | Epiplus Co., Ltd | Arrangement of electrodes for light emitting device |
| US7829909B2 (en) * | 2005-11-15 | 2010-11-09 | Verticle, Inc. | Light emitting diodes and fabrication methods thereof |
| US7928451B2 (en) * | 2006-08-18 | 2011-04-19 | Sensor Electronic Technology, Inc. | Shaped contact layer for light emitting heterostructure |
| US8872204B2 (en) * | 2007-11-23 | 2014-10-28 | Epistar Corporation | Light-emitting device having a trench in a semiconductor layer |
| TWI376817B (en) * | 2007-11-23 | 2012-11-11 | Epistar Corp | Light emitting device, light source apparatus and backlight module |
| KR20090073935A (ko) * | 2007-12-31 | 2009-07-03 | 주식회사 에피밸리 | 3족 질화물 반도체 발광소자 |
| JP2009253056A (ja) * | 2008-04-07 | 2009-10-29 | Showa Denko Kk | Iii族窒化物半導体発光素子及びランプ |
| TWI394296B (zh) * | 2008-09-09 | 2013-04-21 | Bridgelux Inc | 具改良式電極結構之發光元件 |
| KR101000277B1 (ko) * | 2008-12-04 | 2010-12-10 | 주식회사 에피밸리 | 반도체 발광소자 |
| TWI470824B (zh) * | 2009-04-09 | 2015-01-21 | 廣鎵光電股份有限公司 | 電極結構及其發光元件 |
| JP2011023703A (ja) * | 2009-06-17 | 2011-02-03 | Sumitomo Electric Ind Ltd | エピタキシャル基板、発光素子、発光装置およびエピタキシャル基板の製造方法 |
| TWI499347B (zh) * | 2009-12-31 | 2015-09-01 | 晶元光電股份有限公司 | 發光元件 |
| JP2012142630A (ja) * | 2012-04-27 | 2012-07-26 | Hitachi Cable Ltd | 発光装置 |
| TWI635773B (zh) * | 2013-10-15 | 2018-09-11 | 晶元光電股份有限公司 | 發光元件 |
| TWI635772B (zh) | 2013-10-15 | 2018-09-11 | 晶元光電股份有限公司 | 發光元件 |
| TWI699904B (zh) * | 2017-07-31 | 2020-07-21 | 晶元光電股份有限公司 | 發光元件 |
| CN111739878B (zh) * | 2019-03-25 | 2022-05-24 | 群创光电股份有限公司 | 电子装置 |
| CN112993115B (zh) * | 2019-12-17 | 2022-12-27 | 深圳第三代半导体研究院 | 一种发光二极管 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000106472A (ja) | 1998-07-29 | 2000-04-11 | Kyocera Corp | 半導体発光装置 |
| JP2001339101A (ja) | 2000-05-26 | 2001-12-07 | Sharp Corp | 窒化ガリウム系化合物半導体素子 |
| JP2005005281A (ja) | 2002-12-26 | 2005-01-06 | Shogen Koden Kofun Yugenkoshi | 電圧依存性抵抗器層を持つ光放射体 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69433926T2 (de) * | 1993-04-28 | 2005-07-21 | Nichia Corp., Anan | Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung |
| US6281524B1 (en) * | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
| US6614056B1 (en) * | 1999-12-01 | 2003-09-02 | Cree Lighting Company | Scalable led with improved current spreading structures |
| JP4810746B2 (ja) * | 2000-03-31 | 2011-11-09 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子 |
| AU2001244670A1 (en) * | 2000-03-31 | 2001-10-08 | Toyoda Gosei Co. Ltd. | Group-iii nitride compound semiconductor device |
| JP2002319705A (ja) * | 2001-04-23 | 2002-10-31 | Matsushita Electric Works Ltd | Led装置 |
| TW516248B (en) * | 2001-12-21 | 2003-01-01 | Epitech Technology Corp | Nitride light emitting diode with spiral-shaped metal electrode |
| TW567618B (en) * | 2002-07-15 | 2003-12-21 | Epistar Corp | Light emitting diode with adhesive reflection layer and manufacturing method thereof |
| TWI288486B (en) * | 2004-03-17 | 2007-10-11 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
-
2005
- 2005-06-24 TW TW094121291A patent/TWI291243B/zh not_active IP Right Cessation
-
2006
- 2006-06-02 US US11/308,981 patent/US20060289881A1/en not_active Abandoned
- 2006-06-21 KR KR1020060055696A patent/KR101076159B1/ko active Active
- 2006-06-22 DE DE102006028644A patent/DE102006028644A1/de not_active Ceased
- 2006-06-23 JP JP2006174377A patent/JP2007005813A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000106472A (ja) | 1998-07-29 | 2000-04-11 | Kyocera Corp | 半導体発光装置 |
| JP2001339101A (ja) | 2000-05-26 | 2001-12-07 | Sharp Corp | 窒化ガリウム系化合物半導体素子 |
| JP2005005281A (ja) | 2002-12-26 | 2005-01-06 | Shogen Koden Kofun Yugenkoshi | 電圧依存性抵抗器層を持つ光放射体 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI291243B (en) | 2007-12-11 |
| JP2007005813A (ja) | 2007-01-11 |
| DE102006028644A1 (de) | 2007-01-04 |
| KR20060135513A (ko) | 2006-12-29 |
| TW200701508A (en) | 2007-01-01 |
| US20060289881A1 (en) | 2006-12-28 |
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