KR101060656B1 - 솔더 범프 형성용 템플릿의 제조 방법 - Google Patents
솔더 범프 형성용 템플릿의 제조 방법 Download PDFInfo
- Publication number
- KR101060656B1 KR101060656B1 KR1020090041915A KR20090041915A KR101060656B1 KR 101060656 B1 KR101060656 B1 KR 101060656B1 KR 1020090041915 A KR1020090041915 A KR 1020090041915A KR 20090041915 A KR20090041915 A KR 20090041915A KR 101060656 B1 KR101060656 B1 KR 101060656B1
- Authority
- KR
- South Korea
- Prior art keywords
- solder
- etching process
- template
- receiving groove
- forming
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 87
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
Description
Claims (6)
- 기판의 일면에 소정의 패턴을 갖도록 보호막을 형성하는 단계;상기 패턴이 형성된 위치에, 솔더가 수용되는 공간을 형성하고, 저면의 일부에 하측으로 만곡된 형상의 단면을 갖는 위치결정부가 구비되는 수용홈을 형성하는 단계; 및상기 보호막을 제거하는 단계;를 포함하고,상기 수용홈을 형성하는 단계는 등방 식각 공정을 통해 상기 보호막의 하측으로 언더컷을 형성하는 단계, 비등방 식각 공정을 통해 상기 언더컷의 저면 중 상기 위치 결정부의 위치에 해당하는 부분을 하측 방향으로 식각하는 단계, 상기 비등방성 식각 공정에 의해 식각된 부분이 만곡면을 형성하도록 등방성 식각 공정을 추가적으로 진행하는 단계를 포함하고,상기 수용홈은 깊이 보다 너비가 단면 폭이 더 길게 형성되는 것을 특징으로 하는 것을 특징으로 하는 솔더 범프 형성용 템플릿의 제조방법.
- 제1항에 있어서,상기 수용홈은 깊이 대비 단면 폭의 비율은 1:2.5 내지 1:3의 범위를 갖도록 형성되는 것을 특징으로 하는 솔더 범프 형성용 템플릿의 제조방법.
- 삭제
- 삭제
- 삭제
- 제2항에 있어서,상기 등방성 식각 공정은 습식 식각 방식으로 이루어지고, 상기 비등방성 식각 공정은 건식 식각 방식으로 진행되는 것을 특징으로 하는 솔더 범프 형성용 템플릿의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090041915A KR101060656B1 (ko) | 2009-05-13 | 2009-05-13 | 솔더 범프 형성용 템플릿의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090041915A KR101060656B1 (ko) | 2009-05-13 | 2009-05-13 | 솔더 범프 형성용 템플릿의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20100122821A KR20100122821A (ko) | 2010-11-23 |
KR101060656B1 true KR101060656B1 (ko) | 2011-08-31 |
Family
ID=43407658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090041915A KR101060656B1 (ko) | 2009-05-13 | 2009-05-13 | 솔더 범프 형성용 템플릿의 제조 방법 |
Country Status (1)
Country | Link |
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KR (1) | KR101060656B1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114980558B (zh) * | 2022-05-13 | 2023-11-14 | 中国电子科技集团公司第二十四研究所 | 一种bga植球方法及植球装置 |
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2009
- 2009-05-13 KR KR1020090041915A patent/KR101060656B1/ko not_active IP Right Cessation
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Publication number | Publication date |
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KR20100122821A (ko) | 2010-11-23 |
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